CN111668096A - Etching method and device for third-generation semiconductors - Google Patents
Etching method and device for third-generation semiconductors Download PDFInfo
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- CN111668096A CN111668096A CN202010576645.5A CN202010576645A CN111668096A CN 111668096 A CN111668096 A CN 111668096A CN 202010576645 A CN202010576645 A CN 202010576645A CN 111668096 A CN111668096 A CN 111668096A
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Abstract
The invention discloses an etching method and an etching device for a third-generation semiconductor, wherein the etching method for the third-generation semiconductor comprises the following steps: placing a third-generation semiconductor wafer on a processing platform, and arranging the surface to be processed of the third-generation semiconductor wafer upwards; and applying etching liquid to the surface to be processed of the third-generation semiconductor wafer, and keeping the etching liquid flowing and updating on the surface to be processed of the third-generation semiconductor wafer. The technical scheme of the invention can effectively improve the uniformity of etching, and is beneficial to improving the quality, the yield and the performance reliability of the wafer.
Description
Technical Field
The invention relates to the field of third-generation semiconductor processing, in particular to an etching method and device for a third-generation semiconductor.
Background
Third generation compound semiconductor materials are typically very brittle. Wafers of these materials are susceptible to chipping, flaking and cracking during the manufacturing process by transfer from the process tool, the transfer tool, and from the process pod to the transport pod. The wet etching process is a key process step for forming a device structure by etching the exposed semiconductor material after the exposure is completed. The existing wet etching process for processing the third generation compound semiconductor material has the problem of uneven etching, which affects the processing precision.
Disclosure of Invention
The invention mainly aims to provide an etching method of a third-generation semiconductor, aiming at enabling the etching of the third-generation semiconductor to be more uniform.
In order to achieve the above object, the present invention provides a method for etching a third generation semiconductor, comprising the following steps:
placing a third-generation semiconductor wafer on a processing platform, and arranging the surface to be processed of the third-generation semiconductor wafer upwards;
and applying etching liquid to the surface to be processed of the third-generation semiconductor wafer, and keeping the etching liquid flowing and updating on the surface to be processed of the third-generation semiconductor wafer.
Optionally, the step of applying the etching solution to the surface to be processed of the third generation semiconductor wafer includes:
and applying the etching liquid on the surface to be processed of the third-generation semiconductor wafer in a spraying mode.
Optionally, the etching method for the third generation semiconductor further includes, before the step of applying the etching solution to the surface to be processed of the third generation semiconductor wafer:
and wetting the surface to be processed of the third generation semiconductor wafer by water.
Optionally, after the step of applying the etching solution to the surface to be processed of the third-generation semiconductor wafer and keeping the etching solution flowing and updating on the surface to be processed of the third-generation semiconductor wafer, the etching method for the third-generation semiconductor further includes:
and applying water to the surface to be processed of the semiconductor wafer to be subjected to the third generation for cleaning.
Optionally, after the step of applying water to the surface to be processed of the third-generation semiconductor wafer for cleaning, the etching method for the third-generation semiconductor further includes:
drying the third-generation semiconductor wafer by spraying organic solvent and nitrogen; or, the third generation semiconductor wafer is put into a nitrogen oven to be dried.
Optionally, the raw material of the third generation semiconductor wafer comprises any one or more of gallium arsenide, aluminum gallium arsenide, gallium nitride and aluminum gallium nitride.
Optionally, the third generation semiconductor wafer includes a substrate, a collector electrode, a base electrode, and a emitter electrode, which are sequentially stacked.
The invention also provides an etching device of the third generation semiconductor, which comprises:
the processing platform is used for placing a third-generation semiconductor wafer; and the number of the first and second groups,
the first sprayer is located above the processing platform and faces the processing platform, and the first sprayer is used for communicating etching liquid.
Optionally, the first nozzle is provided with a plurality of liquid supply pipes, and the plurality of liquid supply pipes comprise an etching liquid supply pipe, a water supply pipe and a desiccant supply pipe; or,
the etching device for the third generation semiconductor material further comprises: the second spray head is used for communicating water, and the third spray head is used for communicating a drying agent.
Optionally, the first nozzle is a teflon nozzle.
According to the technical scheme, the third-generation semiconductor wafer is placed on the processing platform, so that the third-generation semiconductor is in a flat state, and the surface to be processed of the third-generation semiconductor is arranged upwards, so that when the etching liquid is applied to the surface to be processed, the contact time difference between each position on the surface to be processed and the etching liquid is favorably reduced, the reaction time of the etching liquid at each position and the material at the surface to be processed is closer, and the etching processing uniformity of the wafer is improved. In addition, the technical scheme of the invention enables the etching liquid to flow on the surface to be processed, so that the etching liquid is updated on the surface to be processed at any time, namely, after the effective substances in the etching liquid react with the materials on the surface to be processed and are consumed, the etching liquid at the position can be updated in the flowing state of the etching liquid, and the etching liquid at the position can be kept in a state closer to the initial concentration. Seen from the whole surface to be processed, the liquid to be processed at each position is updated, so that the etching liquid at each position can be maintained in a state equal to or close to the initial concentration, the concentration difference of the etching liquid on the surface to be processed is eliminated, the uniformity and the processing precision of etching processing are improved, and the efficiency of etching processing is also improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic flow chart of an embodiment of a third generation semiconductor etching method according to the present invention;
fig. 2 is a schematic structural diagram of an etching apparatus for a third generation semiconductor according to an embodiment of the present invention.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 100 | |
200 | Processing platform |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, if appearing throughout the text, "and/or" is meant to include three juxtaposed aspects, taking "A and/or B" as an example, including either the A aspect, or the B aspect, or both A and B satisfied aspects. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides an etching method of a third generation semiconductor.
In the embodiment of the present invention, as shown in fig. 1, the etching method for the third generation semiconductor includes the following steps:
s1, placing a third-generation semiconductor wafer on a processing platform, and arranging the surface to be processed of the third-generation semiconductor wafer upwards;
and S3, applying etching liquid to the surface to be processed of the third-generation semiconductor wafer, and keeping the etching liquid to flow and update on the surface to be processed of the third-generation semiconductor wafer.
It should be noted that, in the conventional etching method for the wafer, the wafer is vertically placed, and then the wafer is controlled to move from top to bottom so as to sink into the etching solution until the etching solution submerges the wafer, and after the wafer is soaked for a certain time, the wafer is moved from bottom to top so that the wafer is separated from the etching solution. Through observation, the time for soaking the upper part of the wafer in the etching solution is shortest, and the time for soaking the lower part of the wafer in the etching solution is longest, so that the condition that the etching time distribution of the surface to be processed of the wafer is uneven occurs, and the condition that part of the wafer is not etched enough and the other part of the wafer is etched excessively is caused. In addition, when the wafer is separated from the etching solution, the etching solution adhered to the upper part of the wafer flows downwards along the surface to be processed, and the etching uniformity of the surface to be processed is also influenced by the process. The etching time of the third generation semiconductor is short, and the specific gravity of the time difference generated by the wafer entering and separating from the etching liquid relative to the whole etching time is large, namely the uniformity of the wafer etching is greatly influenced.
In addition, it is found through observation that the etching liquid in the conventional etching method is static, and in the reaction process of the etching liquid and the surface to be processed of the wafer, the situation that the concentration of the etching liquid is different occurs on the surface to be processed due to the difference of the areas of the materials to be etched, so that it can be understood that in the etching process, the effective components of the etching liquid are consumed, the portion with a large area to be etched needs to consume more effective substances in the etching liquid, so that the concentration gradient of the etching liquid at the position is larger, the portion with a small area to be prepared is consumed less, the concentration gradient of the etching liquid near the position is small, and the concentration difference of the etching liquid occurs on each position on the surface to be processed, so that the surface to be processed is etched unevenly.
According to the technical scheme, the third-generation semiconductor wafer is placed on the processing platform, so that the third-generation semiconductor is in a flat state, and the surface to be processed of the third-generation semiconductor is arranged upwards, so that when the etching liquid is applied to the surface to be processed, the contact time difference between each position on the surface to be processed and the etching liquid is favorably reduced, the reaction time of the etching liquid at each position and the material at the surface to be processed is closer, and the etching processing uniformity of the wafer is improved. In addition, the technical scheme of the invention enables the etching liquid to flow on the surface to be processed, so that the etching liquid is updated on the surface to be processed at any time, namely, after the effective substances in the etching liquid react with the materials on the surface to be processed and are consumed, the etching liquid at the position can be updated in the flowing state of the etching liquid, and the etching liquid at the position can be kept in a state closer to the initial concentration. Seen from the whole surface to be processed, the liquid to be processed at each position is updated, so that the etching liquid at each position can be maintained in a state equal to or close to the initial concentration, the concentration difference of the etching liquid on the surface to be processed is eliminated, the uniformity and the processing precision of etching processing are improved, and the efficiency of etching processing is also improved.
Further, in this embodiment, the step of s3. applying the etching solution to the surface to be processed of the third generation semiconductor wafer includes: and applying the etching liquid on the surface to be processed of the third-generation semiconductor wafer in a spraying mode. Specifically, the spraying area of the etching liquid covers the whole surface to be processed of the third-generation semiconductor wafer, so that the etching liquid on the whole surface to be processed can be synchronously updated. It should be noted that, in this embodiment, the etching liquid is continuously applied to the surface to be processed, the continuous application may be continuous spraying or intermittent spraying, and the intermittent spraying may adjust the amount of the etching liquid by adjusting the interval time, so as to improve the utilization efficiency of the etching liquid. In addition, because the third-generation semiconductor wafer is fragile and is easy to damage due to large impact force, the etching liquid is applied in a spraying mode, the water flow radius of the etching liquid sprayed in the spraying mode is small or the particles of water drops are small, the impact force when the etching liquid falls on the wafer is small, and the spraying mode can effectively ensure that the etching liquid keeps flowing on the processing surface of the wafer, so that the etching liquid keeps in a renewal state. Of course, it should be noted that, in this embodiment, the step S3 is not limited to the above technical solution, and in other embodiments, the step S3 of applying the etching solution to the surface to be processed of the third generation semiconductor wafer may include: the etching liquid is applied to the surface to be processed of the third-generation semiconductor wafer in a sprinkling mode, namely, the etching liquid is applied to the surface to be processed in a mode that the spray head moves relative to the wafer, so that the flowing updating of the etching liquid is facilitated.
Further, in the present embodiment, the raw material of the third generation semiconductor wafer includes any one or more of gallium arsenide, aluminum gallium arsenide, gallium nitride, and aluminum gallium nitride. The third generation semiconductor is also called wide bandgap semiconductor, and has the characteristics of high breakdown electric field, high saturated electron velocity, high thermal conductivity, high electron density, high mobility and the like, wherein the forbidden band width is more than 2.2 eV. Compared with the traditional Si material, the power device prepared based on the gallium nitride material has higher power density output and higher energy conversion efficiency, can miniaturize and lighten the system, and effectively reduces the volume and the weight of a power electronic device, thereby greatly reducing the manufacturing and production cost of the system. Meanwhile, the brittleness of the third-generation semiconductor causes the wafer to be easily cracked, so that the etching liquid needs to be applied in a spraying mode, and the safety of the wafer in the etching process is guaranteed.
Further, in this embodiment, as shown in fig. 1, the s3. etching method for a third generation semiconductor further includes, before the step of applying the etching solution to the surface to be processed of the third generation semiconductor wafer:
and S2, wetting the surface to be processed of the third-generation semiconductor wafer by water.
The water is deionized water, and the deionized water is used for wetting the third generation semiconductor wafer, specifically, the wetting process of the third generation semiconductor wafer can be realized in a spraying manner, but is not limited to spraying. The wetted wafer has better affinity when being contacted with the etching liquid, a larger wetting angle between the etching liquid and the wafer due to surface tension is avoided, and the etching liquid is favorably spread on the wafer, so that the processing efficiency of the etching process is improved, and the utilization rate of the etching liquid is also favorably improved. Furthermore, the resistance of the water is greater than or equal to 18M omega/cm, and the deionized water has the characteristic of high cleanliness, so that the cleanliness of the wetting process is guaranteed.
Further, in this embodiment, as shown in fig. 1, after the step of applying the etching solution to the surface to be processed of the third-generation semiconductor wafer s3 and maintaining the etching solution to flow and update on the surface to be processed of the third-generation semiconductor wafer, the etching method for the third-generation semiconductor further includes:
and S4, applying water to the surface to be processed of the semiconductor wafer to be processed of the third generation for cleaning.
And after the etching liquid reacts on the third-generation semiconductor wafer for a preset time, stopping applying the etching liquid, and cleaning the third-generation semiconductor wafer to remove the etching liquid remained on the third-generation semiconductor wafer so as to avoid the continuous reaction of the remained etching liquid and the wafer. The water is applied to the surface to be processed in a spraying manner, and the residual etching liquid and a product obtained after the etching liquid reacts with the wafer are flushed away by the water, so that the wafer is clean and convenient for subsequent processing. Furthermore, the resistance of the water is greater than or equal to 18M omega/cm, the deionized water has the characteristic of high cleanliness, and the wafer is prevented from being polluted by the cleaning water.
Further, in this embodiment, as shown in fig. 1, after s4. the step of applying water to the surface to be processed of the third-generation semiconductor wafer for cleaning, the etching method for the third-generation semiconductor further includes:
and S5, adopting an organic solvent and nitrogen to spray and dry the third-generation semiconductor wafer. The traditional rotary drying mode is influenced by centrifugal force, so that the third-generation semiconductor wafer is easy to be brittle. The technical scheme of the invention adopts the organic solvent and the nitrogen for spray drying, the organic solvent and the nitrogen cannot remain on the wafer or react with the wafer, the drying process is clean, and the third-generation semiconductor wafer can be kept static in the drying process, thereby being beneficial to improving the safety of the drying process. Certainly, the technical solution of the present invention is not limited to the above drying method, and in other embodiments, the third generation semiconductor wafer may be placed in a nitrogen oven for drying, and nitrogen is used as a protective gas, so that the drying process is safe.
Further, in the present embodiment, the third generation semiconductor wafer includes a substrate, a collector electrode, a base electrode, and a emitter electrode, which are sequentially stacked. The collector electrode, the base electrode and the emitter electrode are all epitaxial layers. The etching process is carried out on the emitter electrode positioned on the outer side, the emitter electrode is provided with the surface to be processed, the surface to be processed is provided with photoresist, and the exposed part which is not covered by the photoresist reacts with etching liquid to form an emitter electrode contact platform structure. The substrate includes, but is not limited to, one or more of semi-insulating gallium nitride, silicon carbide, sapphire.
The technical scheme adopted by the embodiment can effectively improve the etching uniformity, and is favorable for improving the quality, yield and performance reliability of the wafer.
The invention also provides an etching device for the third generation semiconductor, which can be used for implementing the etching method for the third generation semiconductor as shown in fig. 2. Specifically, the etching apparatus for the third generation semiconductor includes: the processing platform is used for placing a third-generation semiconductor wafer; the first sprayer is located above the processing platform, faces the processing platform and is used for communicating etching liquid. The processing platform is used for enabling the surface to be processed of the wafer to be closer to the horizontal, and reducing the influence of the gravity of the etching liquid on the surface to be processed on the flowing direction of the etching liquid. When the etching liquid is updated, the etching liquid flows from the first nozzle to the wafer and flows from the edge of the wafer.
Further, in this embodiment, as shown in fig. 2, the area of the lower surface of the first nozzle is greater than or equal to the area of the upper surface of the processing platform, so that the spraying range of the first nozzle covers the processing platform. That is to say, the spraying range of the first nozzle covers the wafer on the processing platform, so that all positions of the surface to be processed of the wafer can be covered by the etching liquid, and the etching liquid at all positions can be kept to be updated synchronously.
Further, in this embodiment, the lower surface of the first nozzle is provided with a plurality of spraying holes. The plurality of spraying holes are beneficial to reducing the impact force of the etching liquid on the wafer, so that the safety of the wafer in the etching process is improved. And the plurality of spraying holes are also beneficial to the uniform distribution of etching liquid on the wafer, and the improvement of the etching uniformity is facilitated.
Further, in this embodiment, the first nozzle is provided with a plurality of liquid supply pipes, and the plurality of liquid supply pipes include an etching liquid supply pipe, a water supply pipe, and a desiccant supply pipe; specifically, the etching liquid supply pipe is used for being communicated with an etching liquid supply source, the water supply pipe is used for being communicated with a water source, and the drying agent supply pipe is used for being communicated with a nitrogen gas supply source and an organic solvent supply source. That is, in the step S2, water enters the first showerhead through the water supply pipe and then flows toward the wafer through the first showerhead. In step S3, the etching solution enters the first nozzle through the etching solution supply pipe, and then flows to the wafer through the first nozzle. In step S4, water enters the first showerhead through the water supply pipe and then flows toward the wafer through the first showerhead. In step S5, the organic solvent and the nitrogen gas enter the first showerhead through the desiccant supply pipe, and then flow toward the wafer through the first showerhead. That is, the steps S2 to S5 can all be performed by the same nozzle, which has the advantage of simplified structure. Of course, all can set up the valve on a plurality of feed pipes for the control supplies liquid, can also be, and is a plurality of the feed pipe all connects on the switching-over valve, and a certain feed pipe is opened to the switching-over valve selectivity, and the switching-over valve is equipped with the intercommunication the pipeline of first shower nozzle is favorable to realizing automatic confession liquid.
Of course, this embodiment is not limited to the above technical solution, and in other embodiments, the etching apparatus for the third generation semiconductor material may further include: the second spray head used for communicating water and the third spray head used for communicating the drying agent adopt different spray heads to correspond to different steps, the second spray head is used for the step S2 and the step S4, the first spray head is used for the step S3, and the third spray head is used for the step S5, so that various liquids can be prevented from being mixed with each other, and the cleanness of materials is guaranteed.
Further, in this embodiment, as shown in fig. 2, the first nozzle and the processing platform are disposed in a disc shape. The area of the third-generation semiconductor wafer is smaller than or equal to the area of the table board of the processing platform, the processing platform and the first spray head are adaptive to the appearance of the wafer, the first spray head can process the wafer more accurately, and etching liquid can be saved. Certainly, the first nozzle and the processing platform according to the technical solution of this embodiment are not limited to the above technical solution, and in other embodiments, the first nozzle and the processing platform may be arranged in a square shape; or the first spray head and the processing platform are arranged in an octagonal shape; or the first spray head and the processing platform are arranged in a hexagon shape, and the like.
Further, in this embodiment, first shower nozzle is the polytetrafluoroethylene shower nozzle, because polytetrafluoroethylene has good chemical stability, can be applicable to various different solvents, consequently, the polytetrafluoroethylene shower nozzle can be used to shower water, etching solution, organic solvent and nitrogen gas etc. first shower nozzle has the characteristics that the safety in utilization is high, application scope is wide, can not lead to the wafer to be polluted because of being corroded the dissolution. Of course, the first collision head in this embodiment is not limited to the above technical solution, and in other embodiments, the first spray head may be provided with a teflon liner.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
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Cited By (1)
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Application publication date: 20200915 |
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