CN111656540A - semiconductor device - Google Patents

Abstract

The semiconductor device includes a light receiving element having a hole formed in a predetermined region, a light emitting element disposed in the hole of the light receiving element, and a first resin covering a peripheral portion of the light receiving element, wherein a surface of the light receiving element and a surface of the light emitting element are substantially flush with each other.

Description

semiconductor device

technical field

The present invention relates to semiconductor devices.

Background technique

Conventionally, a light-emitting element used in an optical encoder or the like has been adopted a structure in which a light-emitting element is mounted on a chip on which the light-receiving element is provided. The light-receiving and light-emitting element reflects light from the light-emitting element on a measured object disposed outside the light-receiving and light-emitting unit, and transmits a signal by receiving the reflected light in the light-receiving element. In this structure, since the light-emitting element is stacked on the light-receiving element, the thickness of the light-receiving and light-emitting element is increased. In a photocoupler of a type having a reflection surface inside the light-receiving element, a light-emitting element accommodating hole is provided substantially in the center of the light-receiving element, and the light emitting element is arranged in the light emitting element accommodating hole. In this structure, the reflective layer is provided on the peripheral surface of the light-emitting element housing hole, and the light from the light-emitting element is reflected in the reflective layer. According to this structure, since the light-emitting element is arranged in the light-emitting element housing hole provided in the light-receiving element, the thickness of the light-receiving element can be reduced (for example, refer to Patent Document 1).

prior art literature

Patent Literature

Patent Document 1: Japanese Patent Application Publication No. Sho 58-148954

SUMMARY OF THE INVENTION

The problem to be solved by the invention

In the light-receiving and light-emitting unit described in the above-mentioned Patent Document 1, since the light of the light-emitting element is reflected in the emission layer provided on the peripheral side surface of the light-emitting element housing hole, the thickness of the light-receiving element needs to be thicker than that of the light-emitting element. In other words, by arranging the light-emitting surface of the light-emitting element at a position higher than the light-receiving surface of the light-receiving element, the reflectance is improved. That is, the positions in the height direction of the light-receiving surface of the light-receiving element and the light-emitting surface of the light-emitting element are different. Therefore, the distance from the light-receiving surface of the light-receiving element to the object to be measured is different from the distance from the light-emitting surface of the light-emitting element to the object to be measured, and there is a problem that high detection sensitivity cannot be obtained.

solutions to problems

According to the first aspect, the semiconductor device includes a light-receiving element having a hole formed in a predetermined region, a light-emitting element provided in the hole of the light-receiving element, and a first resin covering a peripheral portion of the light-receiving element, the surface of the light-receiving element being the same as the surface of the light-receiving element. The surfaces of the light-emitting elements are substantially on the same plane.

According to a second aspect, the semiconductor device of the first aspect further includes a substrate holding the light-emitting element, lead terminals formed separately from the substrate, and first wires connecting the lead terminals and the light-receiving element, the first wire A resin preferably seals the peripheral portion of the substrate, a part of the lead terminal, and the first wire.

According to a third aspect, in the semiconductor device of the second aspect, the substrate preferably includes a light-emitting element housing portion in which the light-emitting element is provided, and the light-emitting element housing portion is arranged in the hole of the light-receiving element.

According to a fourth aspect, in the semiconductor device of the third aspect, the light-receiving element includes a first light-receiving portion and a second light-receiving portion, and connects the first light-receiving portion and the second light-receiving portion and is larger than the first light-receiving portion and the second light-receiving portion. It is preferable that the connection portion of the two light-receiving portions is thin, and the hole of the light-receiving element is formed in the connection portion.

According to a fifth aspect, in the semiconductor device of the fourth aspect, it is preferable that the substrate has a concave portion that accommodates the connection portion of the light-receiving element, and the second resin is filled in the concave portion that accommodates the light-receiving element.

According to a sixth aspect, in the semiconductor device of the fifth aspect, preferably, the gap between the substrate and the light-receiving element is further filled with the second resin.

According to a seventh aspect, the semiconductor device of the first aspect preferably includes lead terminals provided around the light-receiving element, a first wire connecting the lead terminals and the light-emitting element, and a first wire connecting the light-emitting element and the light-receiving element. Two wires, a second resin sealing the light-receiving element, the light-emitting element, a part of the lead terminal, and the first wire.

According to an eighth aspect, the semiconductor device of the first aspect further includes a substrate holding the light-receiving element and the light-emitting element, lead terminals separated from the substrate, and a first wire connecting the lead terminals and the light-receiving element. and a second wire connecting the light-emitting element and the light-receiving element, the first resin preferably seals a part of the lead terminal and the first wire.

According to a ninth aspect, in the semiconductor device of any one of the first to eighth aspects, a height difference between the surface of the light-receiving element and the surface of the light-emitting element is preferably within 10 μm.

Invention effect

According to the present invention, by making the surface of the light-receiving element and the surface of the light-emitting element provided in the hole formed in the light-receiving element substantially on the same plane and making the distance between the object and the light-receiving element equal to the distance between the object and the light-emitting element, it is possible to obtain High detection sensitivity.

Description of drawings

FIG. 1 is a diagram schematically showing the shape of the semiconductor device according to the first embodiment of the present invention.

FIG. 2 is a diagram schematically showing the shape of the semiconductor device according to the first embodiment.

FIG. 3 is a diagram schematically showing the shape of the light-receiving chip of the first embodiment.

4 is a diagram illustrating a method of manufacturing the semiconductor device according to the first embodiment.

5 is a diagram illustrating a method of manufacturing the semiconductor device according to the first embodiment.

6 is a diagram schematically showing a shape of a semiconductor device according to a second embodiment of the present invention.

FIG. 7 is a diagram illustrating a method of manufacturing the semiconductor device according to the second embodiment.

FIG. 8 is a diagram illustrating a method of manufacturing the semiconductor device according to the second embodiment.

9 is a diagram schematically showing a shape of a semiconductor device according to a third embodiment of the present invention.

10 is a diagram illustrating a method of manufacturing a semiconductor device according to a third embodiment.

11 is a diagram illustrating a method of manufacturing a semiconductor device according to a third embodiment.

Detailed ways

Hereinafter, embodiments for implementing the present invention will be described with reference to the accompanying drawings.

-First Embodiment-

1 to 3 are diagrams schematically showing an example of the photocoupler 1 as the semiconductor device according to the first embodiment of the present invention. Fig. 1(a) is a top perspective view, Fig. 1(b) is a top perspective view when the resin is removed from Fig. 1(a), and Fig. 2(a) is AA' and B- in Fig. 1(a) B' sectional view, FIG. 2(b) is a top plan view, and FIG. 2(c) is a back plan view. However, in Fig. 2(a), the region of the A'-B cross-section is omitted from illustration. FIG. 3 is a perspective view of a light-receiving chip to be described later. In addition, for convenience of description, a coordinate system composed of the X-axis, the Y-axis, and the Z-axis set as shown in the figure is used.

In addition, the photocoupler 1 is exemplified as a semiconductor device and described below, but the semiconductor device is not limited to the photocoupler 1, and may be a photoelectric sensor, a mark sensor, or the like.

The photocoupler 1 is a flat-panel photocoupler in which a light-emitting chip 30 having a light-emitting element and a light-receiving chip 20 having a light-receiving element are integrally configured. In FIG. 1 , the light-emitting surface of the light-emitting element and the light-receiving surface of the light-receiving element are both the upper surface (the + side in the Z-axis direction). The optical coupler 1 of the present embodiment is suitable for use in an optical encoder, and the light emitted from the light-emitting element is emitted substantially parallel to the vertical direction of the reflection surface, that is, the Z-axis direction. The object to be measured (not shown) is disposed outside the optical coupler 1 in the Z-axis direction, and the optical coupler 1 is configured to receive light reflected from the object to be measured by a light-receiving element.

The photocoupler 1 includes a substrate 10 , a light-emitting chip 30 , a light-receiving chip 20 , lead terminals 101 , and a resin 51 .

The light-receiving chip 20 has a plurality of light-receiving elements (photodiodes: PD) inside, and has a rectangular shape in plan view. In addition, the light-receiving chip 20 may be composed of a phototransistor in which a PD and a transistor are combined, or may be composed of a PDIC including a PD and an integrated circuit constituting the PD driving circuit. As shown in FIG. 3 , a hole 201 is formed in a predetermined area including the center of the upper surface of the light-receiving chip 20 . A central recess 103 (see FIG. 2 ) of the substrate 10 to be described later is accommodated in the hole 201 . In addition, the light-receiving chip 20 includes a hole 201, and a thin connecting portion 202 (see FIG. 3 ) is formed in a region along the X-axis direction in the drawing. The light-receiving chip 20 includes a first light-receiving portion 203 (the + side in the Y-axis direction in the drawing) and a second light-receiving portion 204 (the - side in the Y-axis direction in the drawing) with the connection portion 202 interposed therebetween. The upper surface of the connection portion 202 (the surface on the + side in the Z-axis direction) is formed to be recessed from the upper surface of the first light receiving portion 203 and the upper surface of the second light receiving portion 204 . That is, the upper surface of the connection part 202 is located at a position lower than the upper surface of the first light receiving part 203 and the upper surface of the second light receiving part 204 on the Z-axis direction + side.

As shown in FIG. 2 , the substrate 10 has a central portion 102 formed of, for example, a lead frame or the like and provided on the upper portion of the connection portion 202 of the light-receiving chip 20 . A central concave portion (light-emitting element housing portion) 103 is formed in the central portion 102 of the substrate 10 corresponding to the region where the hole 201 of the light-receiving chip 20 is formed. As described above, the central concave portion 103 is accommodated in the hole 201 of the light-receiving chip 20 . The lead terminals 101 are arranged along the outer periphery of the first light receiving portion 203 and the second light receiving portion 204 of the light receiving chip 20 . As will be described later, the lead terminal 101 is initially formed integrally with the substrate 10 as a lead frame, and is formed separately from the substrate 10 by cutting a lead portion serving as a connection portion with the lead frame. The upper surface of the central portion 102 (the surface on the + side in the Z-axis direction) is substantially the same surface as the upper surface of the first light receiving portion 203 and the upper surface of the second light receiving portion 204 . The first light-receiving portion 203 and the second light-receiving portion 204 of the light-receiving chip 20 are connected to the lead terminals 101 by bonding wires 21 . The bottom surface 103a of the concave portion of the central concave portion 103 of the substrate 10 forms the central concave portion 103 so that the bottom surface 103a is lower than the upper surface of the central portion 102 (the Z-axis direction-side in the figure). The light-emitting chip 30 is provided on the bottom surface 103 a of the central concave portion 103 .

The light-emitting chip 30 has a light-emitting element, and is provided on the bottom surface 103 a of the central concave portion 103 formed in the central portion 102 of the substrate 10 . The light-emitting chip 30 is electrically bonded to the substrate 10 by a conductive adhesive such as silver wire or solder, for example. Thereby, one electrode of the light-emitting chip 30 , such as a cathode electrode, is connected to the substrate 10 . The upper surface of the light-emitting chip 30, that is, the light-emitting surface, and the upper surface of the light-receiving chip 20, that is, the light-receiving surface, are located at substantially the same height, that is, at substantially the same position in the Z-axis direction. Specifically, the height difference between the light-emitting surface of the light-emitting chip 30 and the light-receiving surface of the light-receiving chip 20 is preferably within a range of 30 μm or less, and more preferably within a range of 10 μm or less. In this specification, the positional difference between the upper surface of the light-emitting chip 30 and the upper surface of the light-receiving chip 20 in the Z-axis direction is set to a range of 30 μm or less in substantially the same range. In other words, the central concave portion 103 is formed so that the bottom surface 103 a of the central concave portion 103 of the substrate 10 is lower than the upper surface of the central portion 102 by the magnitude of the Z-axis direction of the light-emitting chip 30 .

The other electrodes of the light-emitting chip 30 , such as the positive electrode, are connected to the light-receiving chip 20 (the first light-receiving portion 203 in the example shown in the figure) through bonding wires 31 .

As shown in FIG.2(a), the center part 102 of the board|substrate 10 has the recessed part 102a on the lower surface side, ie, the Z-axis direction - side. The connection portion 202 of the light-receiving chip 20 is accommodated in the concave portion 102 a of the central portion 102 of the substrate 10 . The connection portion 202 of the light-receiving chip 20 is sealed with the resin 41 in a state of being accommodated in the concave portion 120 a of the central portion 102 of the substrate 10 . The peripheral edge of the light-receiving chip 20 and a part of the lead terminal 101 of the peripheral edge of the substrate 10 (that is, the part except the rear surface (Z-axis-side surface)) are sealed at the upper part (Z-axis direction + side) of the photocoupler 1 with the resin 51 . ), bonding wire 21. In addition, the resin 41 and the resin 51 are opaque resins having light-shielding properties such as epoxy resin, for example.

The manufacturing method of the above-mentioned optical coupler 1 will be described with reference to FIGS. 4 and 5 . Fig. 4 and Fig. 5 are sectional views A-A' and B-B' in Fig. 1(a) similarly to Fig. 2(a), and in this case, the region of the A'-B cross-section is also omitted from illustration.

As shown in FIG. 4( a ), the substrate 10 and the light-receiving chip 20 are mounted on a thin support base 60 made of metal, a strap, or the like, on which a plurality of lead terminals 101 , a central portion 102 , and a central recessed portion 103 are formed. In addition, the base material forming the substrate 10 is a material having a size such that a plurality of optical couplers 1 can be obtained, and only the region of one optical coupler 1 and its surroundings are shown in the drawings. The light-receiving chip 20 is mounted so that the connection portion 202 is arranged in the recessed portion 102 a of the central portion 102 of the substrate 10 . At this time, the height of the recessed portion 102a of the center portion 102 of the substrate 10 in the Z-axis direction - side surface is set in advance so as to form a gap g between the Z-axis direction + side surface of the connection portion of the light-receiving chip 20 . In addition, the substrate 10 is prepared in advance with a thick plate-shaped base material capable of forming the thickness of the central concave portion 103 , and a part of the base material is removed by etching or the like to form the concave portion 102 a and the central concave portion 103 . In this state, the central portion 102 of the substrate 10 and the plurality of lead terminals 101 are integrally formed as a lead frame (not shown) having a frame portion on the outer periphery of the substrate 10 , and the central portion 102 and the respective lead terminals 101 are integrally formed. The lead frame is connected to the lead frame by a lead portion 102b formed on the lead frame.

It is sealed with resin 41 so as to cover the light-receiving chip 20 and the substrate 10 . At this time, the connecting portion 202 of the light-receiving chip 20 is partially sealed over the entire circumference of the concave portion 102 a provided in the central portion 102 of the substrate 10 with resin including the gap with the central portion 102 of the substrate 10 . After the resin 41 is hardened, the support base 60 is peeled and removed to obtain an intermediate product 1A ( FIG. 4( b )). Also, it can be removed by dissolving the metal used for the support base 60 . The vertical direction of the intermediate product 1A is reversed, and the light-receiving chip 20 and the lead terminals 101 are bonded and connected by the bonding wires 21 ( FIG. 4( c )). The peripheral edge of the light-receiving chip 20, a part of the lead terminal 101 of the peripheral edge of the substrate 10 (that is, the part from which the back surface (Z-axis-side surface) is removed), and the bonding wire 21 are sealed with resin 51 ( FIG. 4( d )) .

The light-emitting chip 30 is connected to the bottom surface 103a of the central concave portion 103 formed in the central portion 102 of the substrate 10 by die bonding using an adhesive such as silver wire (FIG. 5(a)). The electrodes of the light-emitting chip 30 and the electrodes of the light-receiving chip 20 are bonded and connected by bonding wires 31 ( FIG. 5( b )). Then, the central portion 102 of the substrate 10 and each of the lead terminals 101 are cut and fragmented together with the resin 51 at the position indicated by the one-dot chain line in FIG. 5( c ). Thus, the photocoupler 1 shown in FIG. 1 is obtained.

According to the above-described first embodiment, the following effects can be obtained.

(1) The optical coupler 1 includes the light-receiving chip 20 having the hole 201 formed in a predetermined area, the light-emitting chip 30 provided in the central recess 103 of the lead frame, the resin 51 covering the peripheral portion of the light-receiving chip 20 , and the surface of the light-receiving chip 20 It is substantially on the same plane as the surface of the light emitting chip 30 . Thereby, the moving distance of the light emitted from the light-emitting chip 30 before being reflected on the object and the moving distance of the light reflected from the object before entering the light-receiving chip 20 can be made substantially equal. Thereby, the detection accuracy is improved, and the high sensitivity of the sensor can be realized.

In addition, since the size in the Z-axis direction can be reduced compared to the case where the light-emitting chip is mounted on the light-receiving chip and connected by bonding wires, the size and thickness of the photocoupler 1 can be reduced.

In addition, in the prior art disclosed in Japanese Unexamined Patent Application Publication No. Sho 58-148954, the angle formed by the side surface and the bottom surface of the hole formed on the main surface of the transistor is defined as a predetermined value, and the light-receiving element is also Receives light reflected by the sides. However, the light-receiving element is formed of silicon, and the light-emitting element housing hole of the light-receiving element is formed by anisotropic etching of silicon. Therefore, since the inclination angle which the peripheral side surface which becomes the reflection surface makes with respect to the bottom surface is defined as a predetermined angle of 53.7°, it is difficult to use except for a specific use, and the versatility is low. On the other hand, since the light-receiving chip 20 in the present embodiment is not configured to receive the light reflected by the side surface of the structure, it can be used by people other than specific users, and a semiconductor device with high versatility can be provided.

(2) The substrate 10 has a central concave portion 103 as a light-emitting element housing portion in which the light-emitting chip 30 is provided, and the central concave portion 103 is arranged in the hole 201 of the light-receiving chip 20 . Thereby, since the light-emitting chip 30 can be provided on the central recessed portion 103 of the substrate 10, heat dissipation can be improved.

(3) The light-receiving chip 20 has the first light-receiving portion 203 and the second light-receiving portion 204 , and the connection that connects the first light-receiving portion 203 and the second light-receiving portion 204 and is thinner than the first light-receiving portion 203 and the second light-receiving portion 204 part 202 , the hole 201 is provided in the connecting part 202 . Accordingly, in a state where the surface of the light-receiving chip 20 and the surface of the light-emitting chip 30 are substantially on the same plane, the light-emitting chip 30 can be provided on the substrate 10 , thereby improving detection accuracy and heat dissipation. .

(4) The substrate 10 has the concave portion 102 a that accommodates the connection portion 202 of the light-receiving chip 20 , and the resin 41 is filled in the concave portion 102 that accommodates the connection portion 202 . The resin 41 also fills the gap g between the substrate 10 and the light-receiving chip 20 . Thereby, high impact resistance can be obtained.

-Second Embodiment-

A photocoupler according to a second embodiment of the present invention will be described. In the following description, the same reference numerals are assigned to the same constituent elements as those of the first embodiment, and the differences will be mainly described. Moreover, it is the same as that of 1st Embodiment about the point which is not demonstrated.

6 is a view illustrating the optical coupler 1 according to the second embodiment of the present invention, wherein FIG. 6( a ) is a cross-sectional view, FIG. 6( b ) is a top plan view, and FIG. 6( c ) is a back plan view. 6(a) is a C-C' sectional view in FIG. 6(b).

The light-receiving chip 20 has a rectangular shape in plan view, and a hole 201 is formed in a predetermined area including the center. The light-receiving chip 20 is connected to the peripheral portion of the photocoupler 1 through a plurality of lead terminals 101 formed of a lead frame or the like and the connecting wires 21 . The light-emitting chip 30 is provided in the hole 201 . Accordingly, the upper surface of the light-emitting chip 30 , that is, the light-emitting surface, and the upper surface of the light-receiving chip 20 , that is, the light-receiving surface are substantially at the same height, that is, at substantially the same position in the Z-axis direction. In the second embodiment, as in the first embodiment, the height difference between the light-emitting surface of the light-emitting chip 30 and the light-receiving surface of the light-receiving chip 20 is preferably 30 μm or less, and more preferably 10 μm or less. In addition, in this embodiment, the height difference between the light-emitting surface of the light-emitting chip 30 and the light-receiving surface of the light-receiving chip 20 may be set to a range of several μm or less.

The light-emitting chip 30 is connected to the light-receiving chip 20 by bonding wires 31 , and is connected to the lead terminals 101 by bonding wires 32 . Thereby, one electrode of the light-emitting chip 30 , such as a cathode electrode, is electrically connected to the lead terminal 101 , and the other electrode, such as a positive electrode, is electrically connected to the light-receiving chip 20 .

In the state where the light-emitting chip 30 is placed in the hole 201 of the light-receiving chip 20, the light-receiving chip 20, a part of the lead terminal 101 (ie, the part except the back surface (Z-axis-side surface)), the light-emitting chip 30, and the bonding wire 32 are in the same state. The lower portion (the Z-axis direction-side) of the optical coupler 1 is sealed with resin 41 . In the upper portion (+ side in the Z-axis direction) of the photocoupler 1 , the peripheral portion of the light-receiving chip 20 , the lead terminals 101 , and the bonding wires 21 are sealed with resin 51 . In addition, the resin 41 and the resin 51 are opaque resins having light-shielding properties like epoxy resin.

The manufacturing method of the optical coupler 1 of the above-described second embodiment will be described with reference to FIGS. 7 and 8 . Fig. 7 and Fig. 8 are the same as Fig. 6(a), and are C-C' sectional views in Fig. 6(b).

As shown in FIG. 7( a ), a plurality of lead terminals 101 , light-receiving chips 20 , and light-emitting chips 30 are mounted on the support base 60 . In addition, the base material forming the lead terminals 101 has a size such that a plurality of photocouplers 1 can be obtained, and in the drawings, only the region of one photocoupler 1 and its periphery are shown. The light-emitting chip 30 is mounted on the support base 60 through the hole 201 formed in the light-receiving chip 20 . In this state, the plurality of lead terminals 101 are integrally formed as a lead frame (not shown) having a frame portion on the outer periphery, and each lead terminal 101 is connected to the lead frame by a lead portion 102b formed on the lead frame. .

The light-emitting chip 30 and the lead terminals 101 are bonded and connected by bonding wires 32 ( FIG. 7( b )). The light-receiving chip 20 , a part of the lead terminals 101 (that is, the part from which the back surface (the surface on the Z-axis direction-side) is removed), the light-emitting chip 30 , and the bonding wire 32 are sealed with the resin 41 , and the resin 41 is cured, and then peeled off The support base 60 is removed to obtain an intermediate product 1A ( FIG. 7( c )). The vertical direction of the intermediate product 1A is reversed, and the light-receiving chip 20 and the lead terminals 101 are bonded and connected by bonding wires 21 ( FIG. 8( a )). The resin 51 is sealed with the resin 51 so as to cover the peripheral portion of the light-receiving chip 20 , the lead terminals 101 , and the bonding wire 21 ( FIG. 8( b )). The electrodes of the light-emitting chip 30 and the electrodes of the light-receiving chip 20 are bonded and connected by bonding wires 31 ( FIG. 8( b )).

Then, at the position indicated by the one-dot chain line in FIG. 8( c ), the lead portion 102 b connecting each lead terminal 101 is cut and fragmented together with the resin 51 . Thereby, the photocoupler 1 shown in FIG. 6 can be obtained.

According to the second embodiment described above, in addition to the effect (1) obtained by the first embodiment, the following effects can be obtained.

(1) The light-receiving chip 20 , the light-emitting chip 30 , a part of the lead terminal 101 , and the bonding wire 32 are sealed from the back surface with the resin 41 . As a result, the resins 41 and 51 are covered with the resins 41 and 51 except for the upper surfaces of the light-receiving chip 20 and the light-emitting chip 30, so that high impact resistance can be obtained. In addition, since the lead terminal 101 is sealed in an L-shape by the resins 41 and 51, it can be formed into a resin-shatter-resistant shape.

(2) As shown in FIGS. 7 and 8 , since the upper surface of the light-receiving chip 20 and the upper surface of the light-emitting chip 30 are mounted on the support base 60 during manufacture, the light-receiving chip 20 of the photocoupler 1 can be precisely adjusted The upper surface is on the same plane as the upper surface of the light-emitting chip 30 .

-Third Embodiment-

A photocoupler according to a third embodiment of the present invention will be described. In the following description, the same reference numerals are assigned to the same constituent elements as those of the first embodiment, and the differences will be mainly described. In particular, it is the same as that of the first embodiment about the points that are not explained.

9 is a view illustrating the optical coupler 1 according to the third embodiment of the present invention, wherein FIG. 9( a ) is a cross-sectional view, FIG. 9( b ) is a top plan view, and FIG. 9( c ) is a back plan view. 9(a) is a cross-sectional view taken along the line D-D' in FIG. 9(b).

The light-receiving chip 20 has a rectangular shape in plan view, and a hole 201 is formed in a predetermined area including the center. The light-receiving chip 20 and the light-emitting chip 30 are mounted on the substrate 10 . The light-emitting chip 30 is mounted on the substrate 10 through the hole 201 formed in the light-receiving chip 20 . Thus, the light-emitting chip 30 is bonded to the substrate 10 by a conductive adhesive such as silver wire, solder, or the like, and one electrode (eg, a cathode electrode) is electrically connected to the substrate 10 . The upper surface of the light-emitting chip 30 , ie, the light-emitting surface, and the upper surface of the light-receiving chip 20 , ie, the light-receiving surface, can be substantially at the same height, that is, at substantially the same position in the Z-axis direction. Also in the third embodiment, as in the first embodiment, the height difference between the light-emitting surface of the light-emitting chip 30 and the light-receiving surface of the light-receiving chip 20 is preferably 30 μm or less, and more preferably 10 μm or less.

The other electrode of the light-emitting chip 30 , such as an anode electrode, is connected to the light-receiving chip 20 through a bonding wire 31 .

The substrate 10 is composed of, for example, a lead frame, and has, as described above, the mounting portion 105 on which the light-receiving chip 20 and the light-emitting chip 30 are mounted, and a plurality of lead terminals 101 provided on the peripheral portion. The lead terminals 101 and the light-receiving chip 20 are connected by bonding wires 21 .

The light-receiving chip 20 , the peripheral portion of the substrate 10 (that is, a part of the mounting portion 105 and a part of the lead terminal 101 (that is, the portion excluding the back surface (Z-axis-side surface)), and the bonding wire 21 on the photocoupler 1 . The upper part (the + side in the Z-axis direction) is sealed with resin 51 . In addition, the resin 51 is an opaque resin having light-shielding properties such as epoxy resin.

A method of manufacturing the optical coupler 1 according to the third embodiment described above will be described with reference to FIGS. 10 and 11 . Fig. 10 and Fig. 11 are the same as Fig. 9(a), and are sectional views taken along the line D-D' in Fig. 9(b).

As shown in FIG. 10( a ), the substrate 10 on which the plurality of lead terminals 101 and the mounting portion 105 are formed is mounted on the support base 60 . In addition, the base material forming the substrate 10 has a size such that a plurality of optical couplers 1 can be obtained, and only the region of one optical coupler 1 and its surroundings are shown in the figure. The light-receiving chip 20 is connected to the mounting portion 105 of the substrate 10 by die bonding using an adhesive such as silver wire.

The light-receiving chip 20 and the lead terminals 101 are bonded and connected by bonding wires 21 ( FIG. 10( b )). The light-receiving chip 20 , the peripheral portion of the substrate 10 , and the bonding wire 21 are sealed with resin 51 , and the support base 60 is peeled off after the resin 51 is cured ( FIG. 10( c )). The light-emitting chip 30 is connected to the mounting portion 105 of the substrate 10 through the hole 201 formed in the light-receiving chip 20 by bonding connection using an adhesive such as silver wire ( FIG. 11( a )). The electrodes of the light-emitting chip 30 and the electrodes of the light-receiving chip 20 are bonded and connected by bonding wires 31 ( FIG. 11( a )). Then, the resin 51 is cut and fragmented at the position indicated by the one-dot chain line in FIG. 11( b ). Thus, the photocoupler 1 shown in FIG. 9 is obtained.

According to the above-described third embodiment, in addition to the (1) function and effect obtained by the first embodiment, the following functions and effects can be obtained.

The substrate 10 has a mounting portion 105 that holds the light-receiving chip 20 and the light-emitting chip 30 . Thereby, since the light-emitting chip 30 can be provided on the substrate 10, the heat dissipation performance can be improved.

The present invention is not limited to the above-described embodiments as long as the characteristics of the present invention are not impaired, and other embodiments considered within the scope of the technical idea of the present invention are also included in the scope of the present invention.

The disclosures of the following priority basic applications are incorporated herein by reference.

Japanese Patent Application No. 012842 of 2018 (filed on January 29, 2018)

Symbol Description

1—optical coupler, 10—substrate, 20—light receiving chip, 21, 31, 32—bonding wire, 30—light emitting chip, 41, 51—resin, 101—lead terminal, 102—central part, 103—central concave part, 105—installation part, 201—hole, 202—concave part, 203—first light receiving part, 204—second light receiving part.

Claims (9)

1. A semiconductor device, characterized in that: have: A light-receiving element with holes is formed in a predetermined area; a light-emitting element disposed in the hole of the light-receiving element; and the first resin covering the peripheral portion of the light-receiving element, The surface of the light-receiving element and the surface of the light-emitting element are substantially on the same plane. 2. The semiconductor device according to claim 1, wherein: Also has: a substrate holding the above-mentioned light-emitting element; lead terminals formed separately from the above-mentioned substrate; and connecting the lead terminal and the first wire of the light-receiving element, The said 1st resin seals the peripheral edge part of the said board|substrate, a part of the said lead terminal, and the said 1st wire. 3. The semiconductor device according to claim 2, wherein The said board|substrate has a light emitting element housing part in which the said light emitting element is provided, and the said light emitting element housing part is arrange|positioned in the said hole of the said light receiving element. 4. The semiconductor device according to claim 3, wherein The light-receiving element has a first light-receiving portion, a second light-receiving portion, and a connecting portion that connects the first light-receiving portion and the second light-receiving portion and is thinner than the first light-receiving portion and the second light-receiving portion. A hole is formed in the said connection part. 5. The semiconductor device according to claim 4, wherein The said board|substrate has a recessed part which accommodates the said connection part of the said light-receiving element, and the said recessed part which accommodates the said light-receiving element is filled with the 2nd resin. 6. The semiconductor device according to claim 5, wherein The gap between the substrate and the light-receiving element is also filled with the second resin. 7. The semiconductor device of claim 1, wherein have: lead terminals arranged around the above-mentioned light-receiving element; connecting the above-mentioned lead terminal and the above-mentioned first wire of the light-emitting element; a second wire connecting the light-emitting element and the light-receiving element; and The second resin that seals the light-receiving element, the light-emitting element, a part of the lead terminal, and the first wire. 8. The semiconductor device of claim 1, wherein Also has: a substrate holding the above-mentioned light-receiving element and the above-mentioned light-emitting element; lead terminals formed by being separated from the above-mentioned substrate; a first wire connecting the above-mentioned lead terminal and the above-mentioned light-receiving element; and a second wire connecting the light-emitting element and the light-receiving element, The said 1st resin seals a part of the said lead terminal and the said 1st wire. 9. The semiconductor device according to any one of claims 1 to 8, wherein: The height difference between the surface of the light-receiving element and the surface of the light-emitting element is within 10 μm.

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