CN111652188B - Photosensitive sensors, optical fingerprint sensors and electronic devices made by TFT technology - Google Patents
Photosensitive sensors, optical fingerprint sensors and electronic devices made by TFT technology Download PDFInfo
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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Abstract
本申请公开一种TFT工艺制作的感光传感器、光学指纹传感器及电子设备，该感光传感器包括：包括若干呈阵列排布的像素单元的感光像素阵列；每个像素单元至少包括采用TFT工艺形成于基板上的一个感光二极管和一个薄膜晶体管；至少同行/同列中两个像素单元中的薄膜晶体管一端等电位连接而形成共接点；与感光像素阵列中同列/同行像素单元电性连接的若干读出线，共接点与同一根读出线连通；与感光像素阵列中行/列像素单元电性连接的若干门极控制线，两个像素单元中薄膜晶体管的门极分别连接两门极控制线，而使得两个像素单元分时导通。本申请能够在保证满足低成本、薄型化、大面阵指纹识别需求的同时实现高分辨率的指纹识别。
The present application discloses a photosensitive sensor, an optical fingerprint sensor and an electronic device made by TFT process, the photosensitive sensor comprises: a photosensitive pixel array including a plurality of pixel units arranged in an array; each pixel unit comprises at least a photosensitive diode and a thin film transistor formed on a substrate by TFT process; at least one end of the thin film transistors in two pixel units in the same row/column are connected at the same potential to form a common contact; a plurality of readout lines electrically connected to the pixel units in the same column/row in the photosensitive pixel array, the common contact is connected to the same readout line; a plurality of gate control lines electrically connected to the pixel units in the row/column in the photosensitive pixel array, the gates of the thin film transistors in the two pixel units are respectively connected to the two gate control lines, so that the two pixel units are turned on in time sharing. The present application can realize high-resolution fingerprint recognition while ensuring the satisfaction of low-cost, thin-profile and large-area array fingerprint recognition requirements.
Description
Technical Field
The application relates to the field of fingerprint identification, in particular to a photosensitive sensor, an optical fingerprint sensor and electronic equipment manufactured by a TFT technology.
Background
Fingerprints are a unique biological characteristic, and electronic devices with fingerprint identification function are more and more. Taking a mobile phone as an example, fingerprint identification can be applied to various scenes such as unlocking, payment and the like.
Currently, a typical fingerprint recognition sensor is a CMOS image sensor. The fabrication of the image sensor is mainly based on the rapid development of silicon-based CMOS technology. The silicon-based CMOS circuit product has the advantages of greatly improving the performance effect and the production efficiency of the silicon-based CMOS circuit product due to the rapid development of the silicon-based CMOS technology, and correspondingly reducing the manufacturing cost of the CMOS image sensor. But the dimensions of the fabrication host wafer (wafer) of the current silicon-based CMOS process include 12 inches, 8 inches, etc., with the largest dimension being 12 inches and the common dimension being 8 inches. At present, the production line with low cost mainly comprises 8 inches, and the manufacturing cost of the 8-inch production line is very high, so that the requirement of low cost in the current market cannot be met. Further, even if the corresponding chip is manufactured by using a wafer with the maximum size (12 inches) as a main body, the manufacturing cost is very high, and the market demand is still not satisfied.
In order to reduce the cost of the sensor and reduce the size of the mechanism, the optical signal is generally focused to a small image plane through a focusing lens and then subjected to photoelectric conversion, which is the imaging mode of the current CMOS image sensor. The imaging mode has certain requirements on focusing distance, which is not beneficial to the design requirements of thinning of some electronic devices at present.
In addition, in some electronic devices with fingerprint recognition function, especially in the use scenario with a large requirement on effective recognition area, for example, the need to support the functions of multi-finger fingerprint recognition, full-screen fingerprint recognition and the like, the manufacturing of CIS (CMOS Image Sensor) chips which are not suitable for manufacturing by using a semiconductor process can result in high manufacturing cost and limit the range of applied terminal products.
In order to meet the requirements of the current electronic equipment for low-cost, thin and large-area array fingerprint identification, a new technology is necessary to be provided.
Disclosure of Invention
In view of the shortcomings of the prior art, an object of the present application is to provide a photosensitive sensor, an optical fingerprint sensor and an electronic device manufactured by a TFT process, which can meet the fingerprint identification requirements of low cost, thin and large area array and realize high resolution fingerprint identification.
In order to achieve the above purpose, the application adopts the following technical scheme:
a light sensitive sensor fabricated by a TFT process, comprising:
The pixel array comprises a plurality of pixel units which are arranged in an array, wherein each pixel unit at least comprises a light sensing diode and a thin film transistor, the light sensing diode and the thin film transistor are formed on a substrate by adopting a TFT (thin film transistor) process, and one ends of the thin film transistors in two pixel units in at least the same row/column are connected in an equipotential manner to form a common joint;
The plurality of readout lines are electrically connected with pixel units in the same column/row in the photosensitive pixel array, and the common connection point is communicated with the same readout line;
And the gate electrodes of the thin film transistors in the two pixel units are respectively connected with the two gate electrode control lines, so that the two pixel units are conducted in a time-sharing way.
In a preferred embodiment, at least two pixel units connected at one end of the thin film transistor in an equipotential manner are two adjacent pixel units in the same row/column.
In a preferred embodiment, the two gate control lines are two adjacent gate control lines, and the two pixel units are controlled to be turned on at a preset interval.
In a preferred embodiment, one end of the thin film transistor in each pixel unit is electrically connected to one end of the light sensing diode, and the other end of the light sensing diode is in communication with a bias line.
An optical fingerprint sensor comprises a photosensitive sensor manufactured by the TFT process,
The reading chip comprises a plurality of reading channels electrically connected with the reading line;
and the gate electrode control circuit is electrically connected with the gate electrode control lines.
In a preferred embodiment, the gate control circuit includes at least several gate control circuit modules corresponding to the gate control lines one to one, and the gate control circuit modules are formed on the substrate where the photosensitive pixel array is located.
In a preferred embodiment, the gate control circuit is a gate IC chip independent of the photosensitive pixel array, and the gate IC chip includes a plurality of scan channels electrically connected to the gate control lines.
In a preferred embodiment, the gate IC chip and the readout chip are disposed on two adjacent sides of the photosensitive pixel array.
In a preferred embodiment, the optical fingerprint sensor further comprises an optical collimating structure disposed over the array of photosensitive pixels.
In a preferred embodiment, the pixel cell further comprises a capacitor, which is connected in parallel with the photodiode.
An electronic device with fingerprint functionality, the electronic device having a fingerprint identification area, comprising:
The optical fingerprint sensor is arranged below the fingerprint identification area and is used for receiving the signal light carrying the fingerprint signal and reflected by the detected object on the fingerprint identification area.
In a preferred embodiment, the optical fingerprint sensor further comprises an optical collimating structure arranged between the photosensitive pixel array and the fingerprint recognition area.
In a preferred embodiment, the optical collimating structure is disposed adjacent to the array of photosensitive pixels.
In a preferred embodiment, the fingerprint recognition area is arranged on a display screen of the electronic device.
The beneficial effects are that:
The photosensitive sensor, the optical fingerprint sensor and the electronic equipment manufactured by the TFT technology can realize a pixel array of a large area array and high resolution. Meanwhile, at least two pixel units in the same row or column of pixel units share one reading channel, so that the channel number of a reading chip can be effectively reduced while the functions are realized, the size of the reading chip is reduced, and the manufacturing cost of the optical fingerprint sensor manufactured by the whole large-area array TFT technology is reduced. The technical scheme provided by the application can meet the requirements of low cost, thinning and large area array fingerprint identification, and realize high-resolution fingerprint identification. The size of the pixel array can be flexibly changed and set according to actual requirements, so that the requirements of different sizes of different electronic equipment are met, the number of channels of a reading chip is not required to be increased or the design complexity of the reading chip is not required to be increased, and the manufacturing cost of the optical fingerprint sensor of the TFT process is not excessively changed when the optical fingerprint sensor is applied to different electronic equipment.
Specific embodiments of the invention are disclosed in detail below with reference to the following description and drawings, indicating the manner in which the principles of the invention may be employed. It should be understood that the embodiments of the invention are not limited in scope thereby.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from these drawings without inventive faculty for a person skilled in the art.
FIG. 1 is a schematic circuit diagram of a TFT image sensor;
fig. 2 is a schematic circuit diagram of a light sensor manufactured by a TFT process according to an embodiment of the present application;
FIG. 3 is a schematic circuit diagram of a pixel module in a photo sensor circuit fabricated by a TFT process as shown in FIG. 2;
FIG. 4 is a timing diagram of scanning signals of a photosensor fabricated by the TFT process provided in FIG. 2;
FIG. 5 is a schematic diagram of pixel signal collection of a photosensor fabricated by the TFT process provided in FIG. 2;
Fig. 6 is a schematic block diagram of an electronic device provided with a photosensitive sensor fabricated by TFT technology in an embodiment of the present application.
Description of the reference numerals
100. A TFT sensor 13, a pixel unit;
200. the pixel array comprises a photosensitive sensor manufactured by a TFT process, 20, a pixel module, 27, a first pixel unit, 22, a second pixel unit, 131, a thin film transistor, 10, a common contact, 132, a photosensitive diode, 133 and a capacitor;
2. a read-out chip, 21, a read-out line;
3. 31, gate control line;
5. the fingerprint identification device comprises a fingerprint identification effective area, an FPC mounting area, a y direction, a length direction, an x direction and a width direction.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, shall fall within the scope of the invention.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In order to meet the demands of electronic devices with fingerprint recognition function for low cost, thin and large recognition area, a new process is required to replace the current semiconductor process.
At present, the TFT (Thin Film Transistor ) process is mainly applied to the flat panel display, and mainly comprises the display fields of TFT-LCD, OLED, LED and the like. The application of TFT technology to fingerprint identification sensors is still in the initial development stage. The TFT image sensor is a pixel array region and a peripheral region circuit fabricated on one substrate (glass, stainless steel, or plastic material) by amorphous silicon TFT (amorphous Silicon Thin Film Transistor, a-Si TFT), low temperature polysilicon TFT (Low Temperature Poly Silicon Thin Film Transistor, LTPS TFT), or oxide semiconductor TFT (Oxide Semiconductor Thin Film Transistor, OS TFT) technology. The cost of manufacturing the image sensor by the TFT technology is lower than that of manufacturing the CIS chip by the semiconductor technology. The semiconductor process can produce more dense and complex lines, and the integration of the TFT process to produce devices is much lower than that of the semiconductor process. The image sensor manufactured by the TFT technology can manufacture a pixel array part relatively, and the signal processing of the pixel array can not be realized by adopting the TFT technology, so that the signal processing of the pixel array is required to be carried out by a matched semiconductor chip. Whereas the CIS chip basically completes the pixel array section and the processing circuit of the signals of the pixel array in one chip. Therefore, the manufacturing cost of the CIS chip is higher than that of the image sensor manufactured by the TFT process, and the manufacturing cost is increased more than that of the image sensor manufactured by the TFT process with the increase of the manufacturing size of the CIS chip.
Currently, in a flat panel image sensor manufactured by using TFT technology, the functions of amplifying pixel signals and digital-to-analog conversion are generally implemented by using an external Readout chip (Readout IC, RO IC). That is, the pixel electronic signals of the TFT image sensor are connected to an external readout chip through a data line, and the readout chip performs photoelectric conversion and signal processing to collect images.
As shown in fig. 1, a typical TFT sensor 100 is shown, and the TFT sensor 100 may include a substrate and a device layer on the substrate. The device layer is fabricated on the substrate. The substrate material may be glass, stainless steel, or plastic. The device layer is provided with a pixel array area and a peripheral circuit area, and the device layer can be manufactured by the technical process of amorphous silicon TFT, low-temperature polysilicon TFT or oxide semiconductor TFT. The photosensitive pixel array area is provided with a plurality of gate control lines 31 and a plurality of readout lines 21, the gate control lines 31 and the readout lines 21 define grids which are arranged in an array manner, and the area where the grids are located is correspondingly provided with pixel units 13. The pixel unit 13 includes at least one thin film transistor 131, and at least one device (such as a photosensitive device, an electrode plate, a thermosensitive device, etc.). The device is used to collect external input signals (such as light, electrostatic field, heat, etc.), convert them into electronic signals, and store them in the pixel unit 13. The thin film transistor 131 is turned on, so that an electric signal in the device is conducted to the readout line 21, and then an external signal readout chip realizes signal collection. The gate control line 31 is controlled by a peripheral driving circuit to realize the row-by-row turn-on of the thin film transistor 131, where the driving circuit is an external driving chip (i.e. gate IC) or is integrated in the device layer in a TFT device circuit manner.
In the TFT sensor 100, since the image sensor is a 1:1 direct imaging, the focal length is not required, and the thickness is reduced. In the whole, the photosensitive sensor manufactured by the TFT technology is beneficial to realizing the requirements of low cost, thinning and large area array fingerprint identification.
For an image sensor, improving the resolution is an important technical means for improving the product performance and improving the user experience. In general, in order to improve resolution, this can be achieved by increasing the number of pixels. When the number of pixels is increased in the above manner, the area and cost of the sensor are increased. Further, even if the cost is not considered, the number of pixels may be increased to a certain extent, and then the size and layout of the terminal electronic device may be limited.
For example, when the TFT sensor 100 is applied to a smaller electronic device (e.g., a mobile phone), it is desirable to increase the number of pixels in order to improve the resolution of fingerprint recognition, but the limited size cannot meet the requirement of increasing the number of pixels.
Referring to fig. 2 to 6, a light sensor 200 manufactured by a TFT process according to an embodiment of the present invention may include a plurality of light-sensitive pixel arrays of pixel units 13 arranged in an array. Each pixel unit 13 includes at least one photodiode 132 and one thin film transistor 131 formed on a substrate using a TFT process. One end of the thin film transistor 131 in at least two pixel units in the same row/column is connected in an equipotential manner to form a common contact 10. In these embodiments of the photosensitive sensor, the pixel units 13 in the same column/row in the photosensitive pixel array are electrically connected to a plurality of the readout lines 21, wherein the common contact 10 described above is in communication with the same readout line 21. In these embodiments of the photosensitive sensor, the row/column pixel units 13 in the photosensitive pixel array are electrically connected to the gate control lines 31, wherein the gates of the thin film transistors 131 in the two pixel units 13 are respectively connected to the two gate control lines 31, so that the two pixel units 13 are turned on in a time-sharing manner.
In addition, the application also provides an optical fingerprint sensor, which comprises a photosensitive sensor manufactured by the TFT technology, a reading chip 2 and a gate control circuit. The present application will be specifically described below by taking the optical fingerprint sensor as an example.
The light sensing sensor 200 manufactured by the TFT process may be provided with a substrate for providing the above-described pixel array. Specifically, the substrate may be a glass substrate or a flexible polyimide substrate. When the substrate is a flexible polyimide substrate, it is mainly composed of a polyimide film (PI) or a polyester film and a copper foil. The polyimide material has excellent performances of high temperature soldering resistance, high strength, high modulus, flame retardance and the like.
In this embodiment, the photosensitive pixel array may include a plurality of pixel units 13 arranged in an array on a substrate. Each pixel unit 13 includes at least one light sensing diode 132 and one thin film transistor 131. One end of the thin film transistors 131 of at least two pixel units 13 may be connected with an equipotential to form a common node 10, which is electrically connected with the same readout line 21. In particular, when the two tfts 131 are connected at one end in an equipotential manner to form the common contact 10, as shown in fig. 3, one end of the two tfts 131 is electrically connected to the same readout line 21 in a completely overlapping manner. One end of the two thin film transistors are connected in an equipotential manner to form a common contact 10, which may be as shown in fig. 3, and the two thin film transistors 131 are physically connected together. However, in other embodiments, the equipotential connection of one end of the two thin film transistors 131 may be the common contact 10 formed by connecting the same wires, and one end of the two thin film transistors 131 are not directly physically connected together.
Referring to fig. 3, the pixel unit 13 may further include a capacitor 133. The capacitor 133 is connected in parallel with the photodiode 132. Specifically, one end of the thin film transistor 131 in the pixel unit 13 is used to form a common contact 10 electrically connected to the same readout line 21, and the other end is connected to one end of the photodiode 132. One end of the photodiode 132 is connected to the thin film transistor 131, and the other end is electrically connected to the readout chip 2.
In one particular embodiment, the photodiode 132 has opposite P and N terminals. The thin film transistor 131 has a source electrode, a drain electrode, and a gate electrode. The common contact 10 is connected to the source or drain of the thin film transistor 131. The photodiode 132 and the capacitor 133 have a first parallel node connected to the drain/source of the thin film transistor 131 and a second parallel node connected to a bias voltage. The photodiode 132 has opposite P-and N-terminals.
In this embodiment, the sense die 2 is provided with a number of sense lines 21. The common contact 10 of at least two pixel units in the same column/row is electrically connected to the same readout line 21. The pixel units 13 are distributed in an array to form a photosensitive pixel array.
In the present embodiment, one ends of the thin film transistors 131 of at least two pixel units 13 are electrically interconnected to form a common node 10. Specifically, at least two pixel units 13 with equipotential connection at one end of the thin film transistor 131 may be two adjacent pixel units in the same row/column. As shown in fig. 2, one end of the thin film transistors 131 of two adjacent pixel units 13 may be electrically interconnected to form the common contact 10. Two pixel units forming the common contact 10 form one pixel module 20. Specifically, the specific number of the pixel units included in the pixel module 20 may be set according to the actual resolution, the size, and the like, which are not limited herein.
In the following embodiments, two pixel units 13 are included in a pixel module for illustration. The row pixels are illustrated as comprising pixel modules, as shown in fig. 2. The pixel module 20 shown in fig. 2 includes two pixel units 13, and different pixel units 13 in each pixel module 20 are connected to different gate control lines 31 through thin film transistors 131. Of course, in view of some special size requirements, only partial pixel cells 13 may be arranged as pixel modules 20 along the extension direction of the gate control line 31 while other pixel cells are independent of each other on the readout channel. This allows flexible changes in the size of the pixel array, and increases the resolution of some pixels, but also increases the complexity of the control.
In addition, it should be noted that the above-mentioned pixel module 20 includes 2 pixel units 13, and the two pixel units 13 are adjacently disposed. Of course, in other embodiments, two pixel units 13 in the pixel module 20 may be arranged according to a preset rule, for example, two pixel units 13 separated by one pixel unit 13 form one pixel module 20. The pixel units 13 in the same pixel module 20 are adjacently disposed, and wiring of the pixel array can be simplified. If required by control or other considerations, the plurality of pixel units 13 in the same pixel module 20 may be arranged according to a predetermined rule.
In the present embodiment, for the example shown in fig. 2 in which two adjacent pixel units 13 in the same row form one pixel module 20, the common contact 10 formed by the thin film transistors 131 in the pixel modules 20 in two adjacent columns is connected to the same readout line 21. That is, at least part of the thin film transistors 131 of a plurality of rows or columns share one readout line 21. In the embodiment of the present application, the rows and the columns are merely relative concepts, and the two can be mutually converted after the substrate is rotated by 90 degrees. For convenience of description, the direction of the column is taken as the extending direction of the readout line 21, and the direction of the gate control line 31 is taken as the row direction, in conjunction with the provided specification drawings.
In the present embodiment, the gate control circuit is provided with a plurality of gate control lines 31. The gates of the thin film transistors 131 in at least two pixel units forming the common node 10 in the same row/column are respectively connected to different gate control lines 31. Different gate control lines 31 control different pixel cells 13 in the pixel module 20 to conduct in a time-sharing manner. When the thin film transistors 131 sharing one readout line 21 are respectively connected to different gate control lines 31, the readout signals can be output in a time-sharing manner.
In this embodiment, the gates of the thin film transistors 131 in the two pixel units 13 of the common node 10 of the same row/column are correspondingly connected to the two gate control lines 31. When two pixel units 13 corresponding to the common node 10 are adjacent pixel units 13, two gate control lines 31 are set as two adjacent gate control lines 31 for simplifying control, and the two pixel units 13 in the same pixel module 20 are controlled to conduct in a time-sharing manner at a predetermined time interval.
In other embodiments, the number of the pixel units 13 forming the common node 10 in the same row/column may be more than 2, for example, 3 or 4, and for cases greater than 2, analog deduction may be performed based on two pixel units 13 of the common node 10, which is not described in detail in the embodiments of the present application.
As shown in fig. 3, specifically, for the case where the common node 10 is two pixel units 13, the pixel module 20 may include a first pixel unit 27 and a second pixel unit 22. The first pixel unit 27 is provided with a first thin film transistor, and the second pixel unit 22 is provided with a second thin film transistor. The gate electrode of the first thin film transistor is connected with a first gate electrode control line, the gate electrode of the second thin film transistor is connected with a second gate electrode control line, and the source electrode/drain electrode of the first thin film transistor and the source electrode/drain electrode of the second thin film transistor are connected on the same readout line 21, so that the common contact 10 can be formed. And when the second thin film transistor is connected with the second gate control line, the first thin film transistor is disconnected, so that time-sharing connection is realized.
In this embodiment, since the two pixel units 13 in the pixel module 20 share the same readout line 21, the two pixel units 13 are respectively turned on in a time-sharing manner by two different gate control lines 31. Thus, the number of gate control lines 31 is doubled relative to the number of independent readout lines 21 for each pixel cell 13. This results in an increase in the area of the gate control circuit due to an increase in the number of gate control lines 31.
In some embodiments of the TFT optical fingerprint sensor, the gate control circuit may include at least several gate control circuit modules corresponding to the gate control lines 31 one to one. The gate control circuit modules may be formed on a substrate on which the photosensitive pixel array is located. In such embodiments of the gate control circuit, the gate control circuit for implementing the above may be implemented on a substrate using GOA (GATE DRIVER on array) technology without using a separate gate drive IC to implement the gate control circuit. In this way, the gate control circuit can be manufactured at the same time when manufacturing the photosensitive pixel array, and particularly, the manufacturing cost of the gate control circuit can be further reduced for the case that the gate control lines 31 are increased. Specifically, the gate control circuit may include a plurality of gate control circuit modules electrically connected to each of the gate control lines 31. The gate electrode control circuit modules are manufactured on the substrate where the photosensitive pixel array is located.
In some other embodiments mentioned in the above statements, the gate control circuit may be a gate IC chip 3 independent of the photosensitive pixel array. Please refer to fig. 6. In the illustrated embodiment, the gate IC chip 3 and the readout chip 2 are disposed on two adjacent sides of the photosensitive pixel array.
The read-out chip 2 is provided with a plurality of read-out channels matching with a plurality of said read-out lines 21, and the gate IC chip 3 is provided with a plurality of scan channels matching with a plurality of gate control lines 31. Since the integrated circuits in the sense die 2 are much more complex than those contained in the gate IC die, the size of the sense die 2 will be larger than the size of the gate IC die 3. In general, the size of the readout chip 2 increases with the number of readout lines 21, and the size of the gate IC chip increases with the number of gate control lines 31. However, since the area increased by each additional one of the readout lines 21 of the readout chip 2 is larger than the area increased by the gate IC added by one of the gate control lines 31. The manufacturing cost of the chip is directly related to the area of the chip, so that the manufacturing cost of the optical fingerprint sensor is greatly increased for the increase of the size of the photosensitive pixel array, the increase of the resolution and the increase of the reading channel of the reading chip 2. The application uses at least two pixel units 13 in the same row or column to share one readout channel, so that the size and cost of the readout chip 2 can not be increased without increasing the number of readout channels while increasing the size and/or resolution of the photosensitive pixel array. Taking two pixel units 13 as an example, each pixel module 20 is calculated, and the readout chip with the same readout channel number can double the area of the photosensitive pixel array when the scanning channel number of the gate electrode IC chip is doubled. Thus, the rise of the manufacturing cost of the whole optical fingerprint sensor is also within an acceptable range.
The following description will explain the control manner of two pixel units 13 when two pixel units 13 are included in the pixel module 20 and the two pixel units 13 share the same readout line 21. Referring to fig. 4, two pixel units 13 included in the same pixel module 20 are disposed adjacently. In order to avoid overlapping interference between the read-out signals, when the adjacent two gate control lines 31 are turned on row by row, the adjacent two turn-on periods are spaced apart by a predetermined time period. The predetermined time period may be about 1 microsecond. The on period may be 60 μs, and of course, the specific duration of the on period may be determined according to the capacity of the capacitor 133, and the like, so that it is required to ensure that the charges stored in the capacitor 133 can be completely released when the gate control line 31 corresponding to the capacitor 133 is turned on, and the specific value of the present application is not limited herein specifically.
In the embodiment illustrated herein, the gate control line 31 may be doubled or multiplied locally or over the entire area of the TFT sensor 100 provided in fig. 1 without adding the sense line 21 and without changing the sense chip 2. This embodiment is mainly described by taking the embodiment of doubling the gate control line 31 as an example, and other cases can be analogized according to the specific description of this embodiment, and the present application will not be described herein.
In one embodiment, the same pixel module 20 includes two thin film transistors 131, and the gates of the two thin film transistors 131 are respectively connected to different gate control lines 31. The drains/sources of the two thin film transistors 131 are connected to both sides of the same readout line 21. When the odd gate control lines 31 are turned on, the readout chip 2 turns on the odd numbered pixel units in the X-th row of pixels, and when the even gate control lines 31 are turned on, the readout chip 2 turns on the even numbered pixel units in the X-th row of pixels, wherein X is a positive integer.
Please refer to fig. 5 in conjunction with a simplified schematic diagram of a pixel array. In the Pixel array illustrated in fig. 5, it is assumed that 6 Pixel units (pixels) are included in the same row (the number of practical cases is much larger than this number, and the number illustrated here is merely for explaining how to control the Pixel units 13 in the Pixel module 20 when two Pixel units 13 included in the Pixel module 20 share one readout line 21). Here, two pixel units 13 in the pixel block 20 are disposed adjacently. The first gate control line gate1 controls the pixel cells (pixels 1,pixel 3,pixel 5) in the first row, and the second gate control line gate2 controls the pixel cells (pixels 2,pixel 4,pixel 6) in the first row. The third gate control line gate3 controls the pixel cells (pixel 7,pixel 9,pixel 11) in the second row and the fourth gate control line gate4 controls the pixel cells (pixel 8, pixel 10, pixel 12) in the second row. Similarly, the 2X-1 gate control line gate (2X-1) controls the pixel cell (pixel m, pixel m+2, pixel m+4) in the X-th row, and the 2X gate control line gate2X controls the pixel cell (pixel m+1,pixel m+3,pixel m+5) in the X-th row.
When the first gate control line gate1 is turned on, the RO IC reads out the pixel cells (pixel 1, pixel3, pixel 5) in the first row of pixels, and when the second gate control line gate2 is turned on, the RO IC reads out the pixel cells (pixel 2, pixel 4, pixel 6) in the first row of pixels. Similarly, when the 2X-1 gate control line gate (2X-1) is turned on, the ROIC reads out the pixel cell (pixel m, pixel m+2, pixel m+4) in the X-th row of pixels, and when the 2X gate control line gate 2X is turned on, the ROIC reads out the pixel cell (pixel m+1,pixel m+3,pixel m+5) in the X-th row of pixels.
In the embodiment of the TFT process for manufacturing the photosensor 200 described above, compared to the TFT sensor 100 provided in fig. 1, the gate control line 31 and the gate channel number are doubled, and the pixel modules 20 in the same row are controlled by two gate channels, and one Readout line 21 and Readout channel are used to control one row of pixel modules 20 (i.e. at least two rows of pixel units 13). The double increase of the gate control line 31 in the photosensitive pixel array described in the above embodiment can double the number of the pixel units 13 in the photosensitive pixel array, and the maximum extent can double the area of the photosensitive pixel array. The optical fingerprint sensor using the photosensitive pixel array is beneficial to improving the resolution ratio, and the size of the photosensitive pixel array can be flexibly changed within a certain size range to meet the size requirements of different electronic devices applied by the optical fingerprint sensor while controlling the cost of the optical fingerprint sensor.
When the optical fingerprint sensor is applied to the photosensitive pixel array described above, the gate channels corresponding to the gate control lines 31 one by one are additionally arranged in the optical fingerprint sensor when the gate control lines 31 are additionally arranged for the photosensitive pixel array described above. As described above, the optical fingerprint sensor may double the area of the gate IC chip 3 to realize the gate channel doubling if the independent gate IC chip 3 is used, or double the gate channel doubling if the GOA is used to realize the gate control circuit, or double the gate control circuit module. While the area of the photosensitive pixel array is increased, the manufacturing cost of the TFT optical fingerprint sensor is not increased too much or beyond the range acceptable by the intended market, although the area of the gate control circuit is increased. The increase of the photosensitive pixel array can improve the resolution of the optical fingerprint sensor. Compared with independent readout lines for each column/row of pixel units, the number of readout channels of the ROIC can be saved, so that the cost of the ROIC chip in the optical fingerprint sensor is saved, and the manufacturing cost of the optical fingerprint sensor with the same resolution is reduced.
The technical scheme provided by the application is particularly suitable for some specific application scenes, particularly, the scanning channels are distributed along the y direction, the reading channels are distributed along the x direction, when the resolution requirement of a user on the x direction is continuously increased, but the overall size and the layout of the terminal are restricted, and when the number of channels cannot be increased enough in the x direction, the fingerprint identification circuit is required to be further improved, so that the purposes of meeting the high resolution requirement, simultaneously and effectively controlling the cost of the fingerprint identification sensor and meeting the installation size requirement of electronic equipment are realized.
Compared with the existing optical fingerprint sensor manufactured based on the semiconductor technology, the optical fingerprint sensor provided with the light sensing sensor 200 manufactured by the TFT technology can realize fingerprint identification with low cost, thin thickness and large identification area, and compared with the TFT sensor 100 provided by the application, at least two pixel units 13 in the same row or column of pixel units share one reading channel, so that the channel number of a reading chip can be effectively reduced while the functions are realized, the size of the reading chip is reduced, the manufacturing cost of the optical fingerprint sensor manufactured by the whole large-area array TFT technology is reduced, and the resolution is improved.
In addition, the size of the photosensitive pixel array provided by the application can be flexibly changed and set according to actual requirements, so that the requirements of different sizes of different electronic equipment are met, the number of channels of the reading chip 2 is not required to be increased or the design complexity of the reading chip 2 is not required to be increased, and the excessive change of the manufacturing cost of the TFT technology optical fingerprint sensor when the TFT technology optical fingerprint sensor is applied to different electronic equipment is avoided.
The photosensitive sensor 200 manufactured by the TFT process of the optical fingerprint sensor according to the present application employs the photosensitive pixel array, the gate control circuit and the readout chip as described above. The optical fingerprint sensor further includes an optical processing part above the light sensing sensor 200 fabricated by the TFT process. The structure of the optical processing part of the optical fingerprint sensor with ultra-thin and large photosensitive area is also biased to the thin structure. The thinned optical processing part is mainly an optical collimating structure.
Referring to fig. 6 in combination, based on the optical fingerprint sensor provided in the above embodiment, the present application further provides an electronic device with a fingerprint function. The electronic equipment is provided with a fingerprint identification area and further comprises the optical fingerprint sensor in the embodiment, wherein the optical fingerprint sensor is arranged below the fingerprint identification area and is used for receiving signal light which is reflected by a tested object and carries fingerprint signals on the fingerprint identification area.
In one particular use scenario, the electronic device may include a display screen. The fingerprint identification area is arranged on the display screen. The display screen may be understood to include a display area and a non-display area. The fingerprint identification area may be disposed within the display area. The display screen is provided with a length direction y and a width direction x which are opposite, and the size of the display screen in the length direction y is larger than that of the display screen in the width direction x. The first direction is consistent with the width direction x, and the second direction is consistent with the length direction y.
In this embodiment, the electronic device may be an electronic product such as a mobile phone, which has a small size and a compact structure. The display screen of the electronic device is generally rectangular in shape as a whole. In the whole, the size of the optical fingerprint sensor correspondingly installed under the display screen of the electronic equipment is different according to the change of the electronic equipment. Generally, the space under the display screen of the electronic device, especially under the display screen of the electronic device such as a smart phone, where the optical fingerprint sensor can be installed is very limited, so that the integration level of the electronic device of the smart phone is improved to the greatest extent.
Referring to the schematic diagram shown in fig. 6, in order to properly arrange the respective parts of the optical fingerprint sensor in the limited mounting area 7, the gate IC chip 3 may be arranged along the second direction, i.e., the y-direction, and the readout chip 2 may be arranged along the first direction, i.e., the x-direction. Of course, it is not excluded that the gate IC chip 3 is arranged longitudinally along the first direction and the readout chip 2 is arranged longitudinally along the second direction, and this is specifically determined by the shape and size of the gate IC chip 3 and the readout chip 2, and the size of the mounting region 7.
The following is exemplified in connection with a specific application scenario. For electronic devices such as mobile phones, it is necessary to improve the prior single-finger recognition into multi-finger recognition in order to further ensure the security and privacy of the devices. The multi-finger identification mainly refers to that when fingerprint identification is carried out, the multi-fingers (such as two fingers, three fingers and the like) need to be identified and matched successfully at the same time. In general, when performing finger matching, a user typically places a plurality of fingers along the width direction of an electronic device. In order to match the usage habits of most users, the fingerprint recognition valid area 5 should be set as large as possible in the x-direction.
In general, the width dimension of the readout chip 2 is far greater than that of the gate IC chip 3, in order to effectively ensure that a fingerprint identification effective area 5 (i.e., a module formed by an optical processing portion and a photosensitive sensor) is sufficiently large along the width direction x of the display screen, the gate IC chip 3 with a smaller width dimension is disposed on one side of the fingerprint identification effective area 5, and the gate IC chip 3 itself extends lengthwise along the y direction, and the readout chip 2 with a larger width dimension is disposed on the other side of the fingerprint identification effective area 5, and the readout chip 2 itself extends lengthwise along the x direction. In addition, other hardware structures, such as FPC mounting areas 6, are arranged along the y-direction in order not to occupy the dimension in the x-direction. For example, the fingerprint recognition effective region 5, the readout chip 2, and the FPC mounting region 6 may be arranged in order along the y direction.
In addition, if the resolution of the optical fingerprint sensor is further improved, the number of readout channels is generally increased while the pixel units 13 are increased. As the read channel increases, the size of the read chip 2 increases. When the size of the sense die 2 increases to some extent, it is possible that the largest dimension of the mounting area 7 along the x-direction is increased. For such a scenario, the optical fingerprint sensor provided above may be utilized, and since at least two pixel units in the same row or column of pixel units share one readout channel, the size of the readout chip is reduced, so that high-resolution fingerprint recognition can be achieved even in the case of the mounting region 7 having a specific size.
For example, when the size of the mounting area 7 is 45mm×30mm. Wherein 45mm is arranged along the length direction y of the display screen, and 30mm is arranged along the width direction x of the display screen. In order to match the usage habit of most users, the fingerprint identification effective area 5 should be as large as possible in the x direction, so that the gate IC chips 3 with smaller width sizes can be arranged lengthwise along the length direction y of the display screen, and correspondingly, the readout chips 2 with larger width sizes can be arranged lengthwise along the width direction x of the display screen. In addition, along the length direction y of the display screen, the fingerprint identification effective area 5, the reading chip 2 and the mounting area 7 are sequentially arranged, so that the structure of the mounting area 7 is optimally arranged according to specific size, the area layout of the fingerprint identification effective area is most reasonable, and the minimum size of the fingerprint identification effective area 5 is that the width is multiplied by the length=20 mm multiplied by 30mm. The width of the effective fingerprint identification area 5 extends along the length direction y, and the length of the fingerprint identification area extends along the width direction x.
Any numerical value recited herein includes all values of the lower and upper values that increment by one unit from the lower value to the upper value, as long as there is a spacing of at least two units between any lower value and any higher value. For example, if it is stated that the number of components or the value of a process variable (e.g., temperature, pressure, time, etc.) is from 1 to 90, preferably from 20 to 80, more preferably from 30 to 70, then the purpose is to explicitly list such values as 15 to 85, 22 to 68, 43 to 51, 30 to 32, etc. in this specification as well. For values less than 1, one unit is suitably considered to be 0.0001, 0.001, 0.01, 0.1. These are merely examples that are intended to be explicitly recited in this description, and all possible combinations of values recited between the lowest value and the highest value are believed to be explicitly stated in the description in a similar manner.
Unless otherwise indicated, all ranges include endpoints and all numbers between endpoints. "about" or "approximately" as used with a range is applicable to both endpoints of the range. Thus, "about 20 to 30" is intended to cover "about 20 to about 30," including at least the indicated endpoints.
All articles and references, including patent applications and publications, disclosed herein are incorporated by reference for all purposes. The term "consisting essentially of" describing a combination shall include the identified element, ingredient, component or step as well as other elements, ingredients, components or steps that do not substantially affect the essential novel features of the combination. The use of the terms "comprises" or "comprising" to describe combinations of elements, components, or steps herein also contemplates embodiments consisting essentially of such elements, components, or steps. By using the term "may" herein, it is intended that any attribute described as "may" be included is optional.
Multiple elements, components, parts or steps can be provided by a single integrated element, component, part or step. Alternatively, a single integrated element, component, part or step may be divided into separate plural elements, components, parts or steps. The disclosure of "a" or "an" to describe an element, component, feature or step is not to be taken as excluding other elements, components, features or steps.
It is to be understood that the above description is intended to be illustrative, and not restrictive. Many embodiments and many applications other than the examples provided will be apparent to those of skill in the art upon reading the above description. The scope of the present teachings should, therefore, be determined not with reference to the above description, but instead should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled. The disclosures of all articles and references, including patent applications and publications, are incorporated herein by reference for the purpose of completeness. The omission of any aspect of the subject matter disclosed herein in the preceding claims is not intended to forego such subject matter, nor should the inventors regard such subject matter as not be considered to be part of the disclosed subject matter.
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