CN111627598A - Low-impedance metal conductive film for large screen and preparation method thereof - Google Patents
Low-impedance metal conductive film for large screen and preparation method thereof Download PDFInfo
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- CN111627598A CN111627598A CN202010453355.1A CN202010453355A CN111627598A CN 111627598 A CN111627598 A CN 111627598A CN 202010453355 A CN202010453355 A CN 202010453355A CN 111627598 A CN111627598 A CN 111627598A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 72
- 239000002184 metal Substances 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000010410 layer Substances 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000011241 protective layer Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000002346 layers by function Substances 0.000 claims abstract description 22
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 4
- -1 copper nitride Chemical class 0.000 claims description 4
- 229910000431 copper oxide Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 6
- 239000002585 base Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229910000570 Cupronickel Inorganic materials 0.000 description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000037452 priming Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a low-impedance metal conductive film for a large screen and a preparation method thereof, and the low-impedance metal conductive film comprises a substrate layer, a metal silicon layer, a metal functional layer, a blackening layer, an upper protective layer and a lower protective layer, wherein the metal silicon layer, the metal functional layer, the blackening layer and the upper protective layer are plated on a low-refraction surface of the substrate layer through a magnetron sputtering process, the lower protective layer is arranged on the other surface of the substrate layer, before the metal functional layer is manufactured, a layer of metal silicon layer is made to serve as a bonding layer in a bottoming mode, so that the metal functional layer and the substrate are bonded more tightly, the metal functional layer is indirectly bonded on the substrate layer through the metal silicon layer, the falling phenomenon is reduced, meanwhile, the adhesion force after etching is improved.
Description
Technical Field
The invention relates to a low-impedance metal conducting film for a large screen and a preparation method thereof.
Background
In the prior art, an ITO conductive film is also used as a low-impedance metal conductive film for a large screen, and is a high-technology product obtained by sputtering an indium tin oxide conductive film coating on ultrathin glass by using a planar cathode magnetron sputtering technology and performing high-temperature annealing treatment. ITO conductive film glasses are widely used in liquid crystal displays, solar cells, microelectronic ITO conductive film glasses, optoelectronics, and various optical fields.
The main parameters of the ITO conductive film are as follows: surface square resistance, surface resistance uniformity, light transmittance, reflectivity difference before and after etching, thermal stability, acid and alkali stability, scratch resistance and the like. Wherein the light transmittance is mainly related to the base material used for the ITO film and the thickness of the ITO film. Under the condition that the substrate materials are the same, the smaller the surface resistance of the ITO film is, the larger the thickness of the ITO film layer is, and the light transmittance is correspondingly reduced to a certain degree.
The structure of the existing ITO conductive film is as follows: the structure is characterized in that the PET/IM/ITO indium tin oxide, wherein IM is a shadow eliminating layer, ITO is a conductive layer, and the ITO electrode wires are very obvious in appearance due to a large reflection difference before and after etching after the structure is etched into patterns, so that the appearance of the touch screen is influenced. Under visible light, the transmittance of the whole film layer is low and is only about 88%, and if the resistance value is lower, the transmittance is also lower, so that the reflectivity is high, therefore, the etching pattern is very obvious under visible light, and the display effect of the display screen can be directly influenced when the etching pattern is used on the display screen.
Because the ITO coating of the ITO conductive film in the prior art is plated on PET with a lower protective layer and then etched into the touch circuit board, although the touch circuit board is also transparent, the reflection is larger than that of the surface of the PET due to the different refractive index of the ITO coating and the PET, and a heavier shadow is generated.
In the prior art, the coating is prepared by different priming coats (copper nickel, zirconium oxide and the like) or the coating of copper layer evaporation is directly carried out on a base material, so that the falling phenomenon can be caused, the adhesive force is not strong, and the copper layer and the base material are not tightly bonded, thereby causing the generation of light holes.
Disclosure of Invention
The invention aims to provide a low-impedance metal conductive film for a large screen.
In order to solve the technical problems, the technical scheme provided by the invention is as follows: a low-impedance metal conductive film for a large screen comprises a substrate layer, a metal silicon layer, a metal functional layer, a blackening layer, an upper protective layer and a lower protective layer, wherein the metal silicon layer is plated on a low-refraction surface of the substrate layer through a magnetron sputtering process, and the lower protective layer is arranged on the other surface of the substrate layer.
In some embodiments, the material of the lower protective layer is PET.
In some embodiments, the substrate layer is made of PET, CPO, PIA or CUP, has a thickness of 50-200um, and has a light transmittance of 90% or more.
In certain embodiments, the metallic functional layer is a copper plated layer, an aluminum plated layer, or a titanium plated layer.
In some embodiments, the material of the upper protection layer is CPP.
In some embodiments, the substrate layer is made of PET and has a thickness of 50um, 100um, 125um or 188 um.
In some embodiments, the metallic functional layer is a copper plating layer having a thickness of 100nm to 2000 nm.
In some embodiments, the blackened layer is a mixture layer of copper nitride and copper oxide plated by a magnetron sputtering process and has a thickness of 10-20 nm.
In some embodiments, the metal silicon layer has a thickness of 3 to 6 nm.
Another object of the present invention is to provide a method for preparing the low-resistance metal conductive film for large screen according to any of the above embodiments.
In order to solve the technical problems, the technical scheme provided by the invention is as follows: a method for preparing a low-impedance metal conductive film for a large screen comprises the following steps:
the method comprises the following steps: the lower protective layer is attached to one surface of the base material layer;
step two: plating the metal silicon layer on the other low-refraction surface of the substrate layer by a magnetron sputtering process;
step three: plating the metal functional layer on the metal silicon layer through a magnetron sputtering process;
step four: plating the blackening layer on the metal functional layer through a magnetron sputtering process;
step five: and pasting the upper protective layer on the blackening layer to finish the manufacturing.
The scope of the present invention is not limited to the specific combinations of the above-described features, and other embodiments in which the above-described features or their equivalents are arbitrarily combined are also intended to be encompassed. For example, the above features and the technical features (but not limited to) having similar functions disclosed in the present application are mutually replaced to form the technical solution.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages: the low-impedance metal conductive film for the large screen improves the process yield, promotes the copper layer and the base material to be tightly attached by taking the metal silicon layer as the bonding layer, improves the adhesive force, reduces the falling phenomenon, avoids bad adhesive force and broken lines after etching, and reduces the light holes.
Drawings
FIG. 1 is a schematic structural view of the present invention;
wherein: reference numeral 10 denotes a base material layer, 11 denotes a metal silicon layer, 12 denotes a metal functional layer, 13 denotes a blackening layer, 14 denotes an upper protective layer, and 15 denotes a lower protective layer.
Detailed Description
Example 1:
a low-impedance metal conductive film for a large screen comprises a PET lower protective layer 15, a PET substrate layer 10, a metal silicon layer 11 which is plated on a low-refraction surface of the substrate layer through a magnetron sputtering process and is 5nm thick, a metal functional layer 12, a blackening layer 13 and a CPP upper protective layer 14. The thickness of the PET substrate layer 10 is 125um, the light transmittance is 95%, the metal functional layer 12 is a copper-plated layer, the thickness is between 100nm and 2000nm, and the thickness is determined according to impedance requirements (different impedance thicknesses). The blackening layer 13 is a mixture layer of copper nitride and copper oxide plated by a magnetron sputtering process, and has a thickness of 15 nm. At the moment, the low-impedance metal conductive film for the large screen has better performance.
The preparation method comprises the following steps:
the method comprises the following steps: the lower protective layer 15 is attached to one surface of the substrate layer 10;
step two: the metal silicon layer 11 is plated on the other low-refraction surface of the substrate layer 10 through a magnetron sputtering process;
step three: the metal functional layer 12 is plated on the metal silicon layer 11 through a magnetron sputtering process;
step four: the blackening layer 13 is plated on the metal functional layer 12 through a magnetron sputtering process;
step five: and attaching the upper protective layer 14 on the blackening layer 13 to finish the manufacturing.
The following are the test data using different materials as the primer layer:
1. the adhesion of the priming coat of different materials is compared with the light holes, the metal silicon layer has better adhesion and fewer light holes
2. Compared with metal silicon with different thicknesses, the metal silicon layer with the thickness of 3-5nm has the advantages of long-time keeping better adhesive force and less light holes
3. Electrical property test (wire break test) for different material bottom layers
When the copper nickel and the aluminum oxide are respectively used as bonding layers, the electric property test has no-pass phenomenon, and when the metal silicon is used as the bonding layer, the passing rate of the electric property test is better
Example 2:
the utility model provides a low impedance metal conducting film for large screen includes lower protective layer 15, substrate layer 10, plates through magnetron sputtering technology metal silicon layer 11, metal function layer 12, blackened layer 13, upper protective layer 14 on the low refraction face of substrate layer, the material of lower protective layer 15 is PET, the material of substrate layer 10 is COP, thickness is 100um, the luminousness is 93%, metal silicon layer 11's thickness is 4nm, metal function layer 12 is the aluminized layer, thickness is between 100nm-2000nm, it is different according to impedance needs and decide (different impedance thickness), blackened layer 13 is for plating the mixture layer of the copper nitride that establishes and copper oxide through magnetron sputtering technology, thickness is 16nm, upper protective layer 14's material is CPP.
The preparation method comprises the following steps:
the method comprises the following steps: the lower protective layer 15 is attached to one surface of the substrate layer 10;
step two: the metal silicon layer 11 is plated on the other low-refraction surface of the substrate layer 10 through a magnetron sputtering process; step three: the metal functional layer 12 is plated on the metal silicon layer 11 through a magnetron sputtering process;
step four: the blackening layer 13 is plated on the metal functional layer 12 through a magnetron sputtering process;
step five: and attaching the upper protective layer 14 on the blackening layer 13 to finish the manufacturing.
It should be understood that the above-mentioned embodiments are only illustrative of the technical concepts and features of the present invention, and are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the scope of the present invention. All modifications made according to the spirit of the main technical scheme of the invention are covered in the protection scope of the invention.
Claims (10)
1. The low-impedance metal conductive film for the large screen is characterized by comprising a base material layer (10), a metal silicon layer (11) plated on a low-refraction surface of the base material layer through a magnetron sputtering process, a metal functional layer (12), a blackening layer (13), an upper protective layer (14) and a lower protective layer (15) arranged on the other surface of the base material layer.
2. The low impedance metal conductive film for large screen of claim 1, wherein the material of the substrate layer (10) is PET, COP, PI or PC, the thickness is 50-200um, and the light transmittance is above 90%.
3. The low impedance metal conducting film for large screen according to claim 1, wherein said metal functional layer (12) is a copper plating layer, an aluminum plating layer or a titanium plating layer.
4. The low impedance metal conducting film for large screen of claim 1, wherein the material of said upper protection layer (14) is CPP.
5. The low impedance metal conducting film for large screen of claim 1, wherein the material of said lower protective layer (15) is PET.
6. The low impedance metal conductive film for the large screen of claim 1, wherein the material of the substrate layer (10) is PET, and the thickness is 50um, 100um, 125um or 188 um.
7. The low impedance metal conducting film for large screen according to claim 6, wherein said metal functional layer (12) is a copper plating layer with a thickness of 100nm to 2000 nm.
8. The low-impedance metal conductive film for the large screen according to claim 7, wherein the blackened layer (13) is a mixture layer of copper nitride and copper oxide plated by magnetron sputtering process and has a thickness of 10-20 nm.
9. The low impedance metal conducting film for large screen of claim 8, wherein the thickness of said metal silicon layer (11) is 3-6 nm.
10. A method for preparing a low resistance metal conductive film for a large screen according to any one of claims 1 to 9, characterized in that: the method comprises the following steps:
the method comprises the following steps: the lower protective layer (15) is attached to one surface of the base material layer (10);
step two: the metal silicon layer (11) is plated on the other low-refraction surface of the substrate layer (10) through a magnetron sputtering process;
step three: the metal functional layer (12) is plated on the metal silicon layer (11) through a magnetron sputtering process;
step four: the blackening layer (13) is plated on the metal functional layer (12) through a magnetron sputtering process;
step five: and (3) attaching the upper protective layer (14) to the blackening layer (13) to finish the manufacturing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010453355.1A CN111627598A (en) | 2020-05-26 | 2020-05-26 | Low-impedance metal conductive film for large screen and preparation method thereof |
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| CN202010453355.1A CN111627598A (en) | 2020-05-26 | 2020-05-26 | Low-impedance metal conductive film for large screen and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112291917A (en) * | 2020-10-15 | 2021-01-29 | 深圳市顺华智显技术有限公司 | Flexible circuit board and manufacturing method thereof |
| CN112373141A (en) * | 2020-10-30 | 2021-02-19 | 江苏日久光电股份有限公司 | Novel conductive film, preparation method thereof and touch screen |
| CN113096852A (en) * | 2021-03-31 | 2021-07-09 | 宜昌南玻显示器件有限公司 | Conductive film with ultralow sheet resistance and low reflectivity as well as preparation method and application thereof |
| CN113463048A (en) * | 2021-06-18 | 2021-10-01 | 安徽立光电子材料股份有限公司 | Flexible membrane manufacturing method |
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| CN1074424A (en) * | 1991-12-09 | 1993-07-21 | 加迪安工业公司 | But the thermal treatment sputter-coated glasses series of strata of having improved |
| JP2003152206A (en) * | 2001-11-13 | 2003-05-23 | Dainippon Printing Co Ltd | Back protection sheet for solar cell module and solar cell module using the same |
| JP5837160B1 (en) * | 2014-08-25 | 2015-12-24 | 欣永立企業有限公司 | Conductive electrode |
| CN105320369A (en) * | 2014-07-16 | 2016-02-10 | 欣永立企业有限公司 | Manufacturing method of conductive electrode for touch control and structure thereof |
| CN212694855U (en) * | 2020-05-26 | 2021-03-12 | 江苏日久光电股份有限公司 | Low-impedance metal conductive film for large screen |
-
2020
- 2020-05-26 CN CN202010453355.1A patent/CN111627598A/en active Pending
Patent Citations (5)
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| CN1074424A (en) * | 1991-12-09 | 1993-07-21 | 加迪安工业公司 | But the thermal treatment sputter-coated glasses series of strata of having improved |
| JP2003152206A (en) * | 2001-11-13 | 2003-05-23 | Dainippon Printing Co Ltd | Back protection sheet for solar cell module and solar cell module using the same |
| CN105320369A (en) * | 2014-07-16 | 2016-02-10 | 欣永立企业有限公司 | Manufacturing method of conductive electrode for touch control and structure thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112291917A (en) * | 2020-10-15 | 2021-01-29 | 深圳市顺华智显技术有限公司 | Flexible circuit board and manufacturing method thereof |
| CN112373141A (en) * | 2020-10-30 | 2021-02-19 | 江苏日久光电股份有限公司 | Novel conductive film, preparation method thereof and touch screen |
| CN113096852A (en) * | 2021-03-31 | 2021-07-09 | 宜昌南玻显示器件有限公司 | Conductive film with ultralow sheet resistance and low reflectivity as well as preparation method and application thereof |
| CN113463048A (en) * | 2021-06-18 | 2021-10-01 | 安徽立光电子材料股份有限公司 | Flexible membrane manufacturing method |
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