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CN111584689B - Micro LED mass transfer device and micro LED mass transfer method - Google Patents

Micro LED mass transfer device and micro LED mass transfer method Download PDF

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CN111584689B
CN111584689B CN202010404144.9A CN202010404144A CN111584689B CN 111584689 B CN111584689 B CN 111584689B CN 202010404144 A CN202010404144 A CN 202010404144A CN 111584689 B CN111584689 B CN 111584689B
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micro led
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CN111584689A (en
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樊勇
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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Abstract

一种micro LED巨量转移装置及其转移方法,micro LED巨量转移装置,包括:光照模块、转移模块、清洗模块以及干燥模块,光照模块设置在整个装置的最上面,光照模块内设置有掩膜板;转移模块设置在所述光照模块的下方,所述转移模块内包括:蓝宝石基板、micro LED芯片、传送带以及载板,待转移的所述micro LED芯片正对于所述掩膜板的开口处设置;清洗模块包括:传送带、清洗溶液和清洗喷头;所述干燥模块包括:传送和干燥源;有益效果:转移时,将掩膜板的开口处正对于待转移的所述micro LED芯片,可以一次性转移多个micro LED芯片,实现micro LED芯片的巨量转移,提升micro LED的转移效率;同时,所述传送带上设置有粘胶层,减少了与所述micro LED芯片接触的次数,提高了micro LED巨量转移良率。

Figure 202010404144

A micro LED mass transfer device and a transfer method thereof, the micro LED mass transfer device comprises: a lighting module, a transfer module, a cleaning module and a drying module, the lighting module is arranged on the top of the whole device, and a mask is arranged in the lighting module. membrane plate; the transfer module is arranged below the illumination module, and the transfer module includes: a sapphire substrate, a micro LED chip, a conveyor belt and a carrier plate, and the micro LED chip to be transferred is facing the opening of the mask plate The cleaning module includes: a conveyor belt, a cleaning solution and a cleaning nozzle; the drying module includes: a conveying and drying source; the beneficial effect: during the transfer, the opening of the mask plate is facing the micro LED chip to be transferred, Multiple micro LED chips can be transferred at one time, realizing massive transfer of micro LED chips, and improving the transfer efficiency of micro LED; at the same time, the conveyor belt is provided with an adhesive layer, which reduces the number of contacts with the micro LED chips. Improved micro LED mass transfer yield.

Figure 202010404144

Description

micro LED bulk transfer device and micro LED bulk transfer method
Technical Field
The application relates to the field of display, in particular to a micro LED bulk transfer device and a transfer method thereof.
Background
Micro light emitting diode (Micro LED) generally means that on the basis of a conventional Micro LED chip structure, the size specification of the Micro LED chip is reduced to a size within 200 micrometers, and red, green and blue Micro LEDs are arranged on a Thin Film Transistor (TFT) or a Complementary Metal Oxide Semiconductor (cmos) according to a certain rule, so that a Micro device capable of realizing full-color display is formed. The display has independently controlled display pixels, has the technical characteristics of independent light emitting control, high luminance, low power consumption, ultrahigh resolution, ultrahigh color saturation and self-luminescence of a Micro LED Micro display device, can realize flexible and transparent display and the like, has the power consumption of only about 10 percent of that of a liquid crystal panel, has low packaging requirement, is easy to realize flexible and seamless splicing display, and is a future display with development potential in the future.
When the Micro LED is applied to a large-size display panel, the sapphire substrate or the GaAs substrate of the LED needs to be removed, and due to the fact that the integration level of the Micro LED is high, the utilization rate of the Micro LED is low due to the excessively dense arrangement of the Micro LED, waste is caused, and therefore the Micro LED needs to be transferred to a driving circuit board which is arranged sparsely through massive transfer in practical use.
Therefore, in the existing micro LED bulk transfer technology, there is a problem that the efficiency and yield of the micro LED bulk transfer apparatus and method for micro LEDs are low, and improvement is urgently needed.
Disclosure of Invention
The application relates to a micro LED bulk transfer device and a transfer method thereof, which are used for solving the problems of low efficiency and yield of the micro LED bulk transfer device and the micro LED bulk transfer method of a micro light-emitting diode in the prior art.
In order to solve the above problems, the technical solution provided by the present application is as follows:
the application provides a pair of micro LED huge transfer device, micro LED huge transfer device includes: the device comprises an illumination module, a transfer module, a cleaning module and a drying module;
the illumination module is arranged on the uppermost surface of the whole device, and a mask plate is arranged in the illumination module;
the transfer module is arranged below the illumination module, and comprises: the micro LED transfer printing device comprises a sapphire substrate, micro LED chips, a conveyor belt and a carrier plate, wherein the micro LED chips to be transferred are arranged right opposite to openings of a mask plate;
the cleaning module includes: a conveyor belt, a cleaning solution and a cleaning spray head;
the drying module includes: a conveyor belt and a drying source.
In some embodiments of the present application, the conveyor belt is composed of a stretch-resistant substrate and an adhesive layer disposed on one side of the stretch-resistant substrate, and the adhesive layer is disposed on one side of the micro LED chip.
In some embodiments of the present application, the reticle has a plurality of openings disposed thereon.
In some embodiments of the present application, the micro LED bulk transfer device further comprises at least two rollers, and the rollers drive the conveyor belt to move.
In some embodiments of the present application, the conveyor belt in the transfer module is a first conveyor belt, the conveyor belt in the cleaning module is a second conveyor belt, the conveyor belt in the drying module is a third conveyor belt, the first conveyor belt is driven by a first roller and a second roller, the second conveyor belt is driven by a second roller and a third roller, and the third conveyor belt is driven by a third roller and a fourth roller.
In some embodiments of the present application, the first roller, the second roller, the third roller, and the fourth roller are made of the same material; the second roller wheel and the third roller wheel are equal in radius, and the axle centers of the second roller wheel and the third roller wheel are located on the same horizontal line.
In some embodiments of the present application, the illumination module employs a solid state laser having a certain preset laser wavelength.
In some embodiments of the present application, the preset laser wavelength length of the solid-state laser is: 266 nm.
In some embodiments of the present application, the cleaning solution is a hydrochloric acid solution.
The application also provides a micro LED huge transfer method, which adopts the micro LED huge transfer device, and the method comprises the following steps:
s10, irradiating the sapphire substrate by a solid laser through the mask plate;
s20, sticking the peeled micro LED chips on a conveyor belt, and conveying the micro LED chips to a cleaning module by the conveyor belt;
s30, the cleaning spray head sprays cleaning solution to clean the micro LED chips in the cleaning module, Ga and Ga oxides on the micro LED chips are washed off, and then the micro LED chips are conveyed to the drying module;
and S40, drying the micro LED chips in the drying module by using a drying source.
Compared with the prior art, the micro LED huge transfer device and the transfer method thereof have the advantages that:
1. the application provides a micro LED huge transfer device includes: the device comprises an illumination module, a transfer module, a cleaning module and a drying module, wherein the illumination module is arranged on the uppermost surface of the whole device, and a mask plate is arranged in the illumination module; the transfer module is arranged below the illumination module, and comprises: the micro LED transfer printing device comprises a sapphire substrate, micro LED chips, a conveyor belt and a carrier plate, wherein the micro LED chips to be transferred are arranged right opposite to openings of a mask plate; the cleaning module includes: a conveyor belt, a cleaning solution and a cleaning spray head; the drying module includes: a conveying and drying source; when the micro LED chips are required to be transferred, the opening of the mask plate is right opposite to the micro LED chips to be transferred, and a plurality of micro LED chips can be transferred at one time, so that huge transfer of the micro LED chips is realized, and the transfer efficiency of the micro LED is improved;
2. the application provides a micro LED huge amount transfer device, the conveyer belt is in by stretch-proofing base plate and setting the viscose layer of stretch-proofing substrate one side is constituteed, because be provided with the viscose layer on the conveyer belt, can directly with micro LED chip bonds on the conveyer belt, has guaranteed that micro LED chip is stable glues and is in carry out subsequent washing and drying on the conveyer belt, reduced with the number of times of micro LED chip contact has improved the yield that micro LED huge amount shifted.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a micro LED bulk transfer device according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of a micro LED provided in the embodiment of the present application.
Fig. 3 is a top view of the conveyor belt adhered with the transferred micro LED chips according to the embodiment of the present application.
Fig. 4 is a schematic cross-sectional view of a conveyor belt provided in an embodiment of the present application.
Fig. 5 is a schematic flow chart of a macro transfer method of micro LEDs according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
The application provides a micro LED mass transfer device and a transfer method thereof, and particularly refers to fig. 1-5.
Because the existing Micro LEDs are applied to a large-size display panel, the sapphire substrate or GaAs substrate of the LEDs needs to be removed, and because the integration level of the Micro LEDs is high, the utilization rate of the Micro LEDs is low due to the excessively dense arrangement of the Micro LEDs, and waste is caused, the Micro LEDs need to be transferred to a driving circuit board which is arranged sparsely through massive transfer in practical use, and because the volumes of the Micro LEDs are small, the efficiency and the yield of the existing massive selective transfer device and method are low. Therefore, the present application provides a macro transfer apparatus and method for micro LED to solve the above problems.
Referring to fig. 1, a schematic structural diagram of a micro LED bulk transfer device provided in the present application is shown, where the micro LED bulk transfer device includes: the device comprises an illumination module 1, a transfer module 2, a cleaning module 3 and a drying module 4;
the illumination module 1 is arranged on the uppermost surface of the whole device, and a mask 12 is arranged in the illumination module 1; during illumination, laser is irradiated onto the sapphire substrate 21 through the opening of the mask 12 to decompose the GaN buffer layer 212 in the sapphire substrate 21 into Ga and nitrogen N2, so that the micro LED chips 22 are separated from the sapphire substrate 211, and the micro LED chips 22 can fall off the conveyor belt 24;
the transfer module 2 is arranged below the illumination module 1, and the transfer module 2 comprises: the mask comprises a sapphire substrate 21, micro LED chips 22, a conveyor belt 24 and a carrier plate 25, wherein the micro LED chips 22 to be transferred are arranged right opposite to the opening of the mask 12; the mask plate 12 is provided with a plurality of openings, the openings of the mask plate 12 are opposite to the micro LED chips 22 to be transferred, and after laser irradiation, the micro LED chips 22 to be transferred can directly fall off the conveyor belt 24, so that the micro LED chips 22 are transferred;
the cleaning module 3 includes: a conveyor belt 33, a cleaning solution 32, and a cleaning head 31; in the laser irradiation process, there may be a portion of the area of the micro LED chip 22 where the Ga metal in the GaN buffer layer 212 remains and does not fall off, or reacts with water and oxygen in the air to become gallium oxide, which may affect the light emitting effect of the micro LED chip 22, so after the micro LED chip 22 is transferred, the gallium metal and its oxide remaining on the micro LED chip 22 need to be cleaned to reduce the effect of gallium and its oxide on the light emitting efficiency of the micro LED chip 22;
the drying module 4 includes: the conveying belt 42 and the drying source 41 are used for cleaning the micro LED chips 22 after cleaning, so that the cleaning solution in the cleaning module 3 is prevented from remaining on the micro LED chips 22, and the micro LED chips 22 are prevented from being excessively corroded to affect the yield of the micro LED chips 22.
Further, referring to fig. 2, the sapphire substrate 21 includes: the micro LED chip 22 comprises an N electrode 2211, an N type GaN2212, an N type limiting layer 2213, an MQWs multi-quantum light-emitting layer 2214, a P type limiting layer 2215, a P type GaN2216 and a P electrode 2217; the micro LED chips 22 can be classified into: red micro LED chip 221, green micro LED chip 222 and blue micro LED chip 223, red light is sent out to red micro LED chip 221, green micro LED chip 222 sends the green glow, blue micro LED chip 223 sends the blue light.
Referring to fig. 4, in some embodiments of the present application, the conveyor belt 24 is composed of a stretch-resistant substrate 241 and an adhesive layer 242 disposed on one side of the stretch-resistant substrate, wherein the stretch-resistant substrate 241 is flexible and stretch-resistant; viscose layer 242 is just right micro LED chip 22 one side sets up, works as like after 22 times laser irradiation of micro LED chip drop, can directly drop on the conveyer belt 24, need not artificial intervention and can the steady transportation, just micro LED chip 22's surface also can not receive the extrusion, has improved micro LED chip 22's yield.
In some embodiments of this application, be provided with a plurality of openings on the mask 12, every the opening size and the shape of the opening part of mask 12 and every micro LED chip 22's size and shape are the same, a plurality of the opening of mask promptly illumination can shine a plurality of micro LED chips 22 that wait to shift promptly realize a plurality ofly promptly micro LED chip 22's transfer. Referring to fig. 3, a top view of the conveyor belt to which the transferred micro LED chips 22 are adhered is shown, and the conveyor belt is adhered with a plurality of red micro LED chips 221, a plurality of green micro LED chips 222, and a plurality of blue micro LED chips 223.
In some embodiments of the present application, the micro LED bulk transfer device further comprises at least two rollers, and the rollers drive the conveyor belt to move.
Further, the conveyor belt in the transfer module 2 is a first conveyor belt 24, the conveyor belt in the cleaning module 3 is a second conveyor belt 33, the conveyor belt in the drying module 4 is a third conveyor belt 42, the first conveyor belt 24 is driven by a first roller 23 and a second roller 34, the second conveyor belt 33 is driven by a second roller 34 and a third roller 35, and the third conveyor belt 42 is driven by a third roller 35 and a fourth roller 43. The first conveyor belt 24, the second conveyor belt 33 and the third conveyor belt 42 are made of the same material, have the same width and have the same shape, that is, are one section of the same conveyor belt, and are output from the first roller 23 to the fourth roller 43 during each conveying, so as to complete the transfer, cleaning and drying of the micro LED chips 22.
Further, the first roller 23, the second roller 34, the third roller 35 and the fourth roller 43 are made of the same material and are cylindrical; because second roller 34 with third roller 35 is located cleaning module 3, for guaranteeing micro LED chip 22 is when wasing, cleaning solution with be close to sapphire substrate one side micro LED chip 22's surface carries out abundant reaction, thoroughly washs to remain in micro LED chip 22 is close to the gallium metal and the oxide of sapphire substrate side surface will second roller 34 with third roller 35's radius sets up equally, just second roller 34 with the axle center of third roller 35 is located same water flat line, makes micro LED chip 22 can follow the horizontal direction even running on second conveyer belt 33.
In some embodiments of the present application, the illumination module employs a solid laser 11 having a certain preset laser wavelength; further, the preset laser wavelength length of the solid laser 11 is: 266nm, that is, when the solid state laser 11 is irradiated with light, the solid state laser 11 stably emits a laser beam having a wavelength of 266nm to irradiate the sapphire substrate, so that the GaN buffer layer on the sapphire substrate is decomposed, and the micro LED chip 22 and the sapphire substrate are peeled off.
In some embodiments of the present application, the cleaning solution is a hydrochloric acid solution, that is, the hydrochloric acid solution reacts with gallium metal and its oxide, so that the gallium metal and its oxide on the surface of the micro LED chip 22 are corroded away.
Referring to fig. 5, the present application further provides a micro LED bulk transfer method, which uses the micro LED bulk transfer apparatus, and the method includes the following steps:
s10, irradiating the sapphire substrate by a solid laser through the mask plate; the micro LED chips to be transferred are right opposite to the openings of the mask plate, and the laser can be used for independently stripping the micro LED chips 22 to be transferred, so that the cost is saved, and the transfer efficiency is also improved;
s20, sticking the peeled micro LED chips on a conveyor belt, and conveying the micro LED chips to a cleaning module by the conveyor belt; after the micro LED chips are irradiated by laser for a period of time, the GaN buffer layer above the micro LED chips to be transferred is decomposed into Ga and nitrogen under the irradiation of the laser, the micro LED chips cannot be adhered to the sapphire substrate, the micro LED chips fall off the conveyer belt, and the micro LED chips are immediately adhered to the conveyer belt due to the adhesive layer arranged on the conveyer belt and are transported to the next module along with the conveyer belt;
s30, the cleaning spray head sprays cleaning solution to clean the micro LED chips in the cleaning module, Ga and Ga oxides on the micro LED chips are washed off, and then the micro LED chips are conveyed to the drying module; corroding gallium metal and gallium oxide remaining on the surface of the micro LED chip with hydrochloric acid solution to prevent the gallium metal and gallium oxide from influencing the luminous efficiency of the micro LED chip;
s40, drying the micro LED chips in the drying module by using a drying source, preventing hydrochloric acid solution from remaining on the surfaces of the micro LED chips, and avoiding excessive corrosion of the micro LED chips by the hydrochloric acid solution, thereby influencing the yield of the micro LED chips.
Therefore, the micro LED huge transfer device and the transfer method thereof have the beneficial effects that: first, the present application provides a micro LED bulk transfer device, including: the device comprises an illumination module, a transfer module, a cleaning module and a drying module, wherein the illumination module is arranged on the uppermost surface of the whole device, and a mask plate is arranged in the illumination module; the transfer module is arranged below the illumination module, and comprises: the micro LED transfer printing device comprises a sapphire substrate, micro LED chips, a conveyor belt and a carrier plate, wherein the micro LED chips to be transferred are arranged right opposite to openings of a mask plate; the cleaning module includes: a conveyor belt, a cleaning solution and a cleaning spray head; the drying module includes: a conveying and drying source; when the micro LED chips are required to be transferred, the opening of the mask plate is right opposite to the micro LED chips to be transferred, and a plurality of micro LED chips can be transferred at one time, so that huge transfer of the micro LED chips is realized, and the transfer efficiency of the micro LED is improved; secondly, the huge transfer device of micro LED that this application provided, the conveyer belt is in by stretch-proofing base plate and setting the viscose layer of stretch-proofing substrate one side is constituteed, because be provided with the viscose layer on the conveyer belt, can directly with the micro LED chip bonds on the conveyer belt, has guaranteed that the micro LED chip is stable to be glued carry out subsequent washing and drying on the conveyer belt, reduced with the number of times of micro LED chip contact has improved the yield that the huge transfer of micro LED.
The micro LED bulk transfer device and the transfer method thereof provided by the embodiment of the present application are described in detail above, a specific example is applied in the description to explain the principle and the implementation manner of the present application, and the description of the embodiment is only used to help understanding the technical scheme and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (7)

1. A micro LED macro transfer device, comprising: the device comprises an illumination module, a transfer module, a cleaning module and a drying module;
the illumination module is arranged on the uppermost surface of the whole device, and a mask plate is arranged in the illumination module;
the transfer module is arranged below the illumination module, and comprises: the micro LED transfer printing device comprises a sapphire substrate, micro LED chips, a conveyor belt and a carrier plate, wherein the micro LED chips to be transferred are arranged right opposite to openings of a mask plate;
the cleaning module includes: a conveyor belt, a cleaning solution and a cleaning spray head;
the drying module includes: a conveyor belt and a drying source;
the conveyor belt consists of a stretch-resistant substrate and an adhesive layer arranged on one side of the stretch-resistant substrate, and the adhesive layer is arranged right opposite to one side of the micro LED chip; the conveying belt in the transfer module is a first conveying belt, the conveying belt in the cleaning module is a second conveying belt, the conveying belt in the drying module is a third conveying belt, the first conveying belt is driven by a first roller wheel and a second roller wheel, the second conveying belt is driven by a second roller wheel and a third roller wheel, the third conveying belt is driven by a third roller wheel and a fourth roller wheel, the first conveying belt, the second conveying belt and the third conveying belt are made of the same material, width and shape, namely the same conveying belt is one section of the same conveying belt, and during conveying at each time, the first roller wheel is output to the fourth roller wheel to complete transfer, cleaning and drying of the micro LED chips.
2. The micro LED macro transfer device according to claim 1, wherein the mask plate is provided with a plurality of openings.
3. The micro LED macro transfer device according to claim 1, wherein the first, second, third and fourth rollers are the same material; the second roller wheel and the third roller wheel are equal in radius, and the axle centers of the second roller wheel and the third roller wheel are located on the same horizontal line.
4. The micro LED macro transfer device of claim 1, wherein the illumination module employs a solid laser with a certain preset laser wavelength.
5. The micro LED macro transfer device according to claim 4, wherein the preset laser wavelength length of the solid state laser is: 266 nm.
6. The micro LED macro transfer device according to claim 1, wherein the washing solution is a hydrochloric acid solution.
7. A micro LED bulk transfer method, characterized by using the micro LED bulk transfer apparatus of claim 1, the method comprising the steps of:
s10, irradiating the sapphire substrate by a solid laser through the mask plate;
s20, sticking the peeled micro LED chips on a conveyor belt, and conveying the micro LED chips to a cleaning module by the conveyor belt;
s30, the cleaning spray head sprays cleaning solution to clean the micro LED chips in the cleaning module, Ga and Ga oxides on the micro LED chips are washed off, and then the micro LED chips are conveyed to the drying module;
and S40, drying the micro LED chips in the drying module by using a drying source.
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* Cited by examiner, † Cited by third party
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CN112864055A (en) * 2021-02-07 2021-05-28 东莞阿尔泰显示技术有限公司 Transfer process and transfer equipment for LED lamp beads
CN116666508B (en) * 2023-06-28 2024-04-02 深圳市凯意科技有限公司 Mini/micro led laser huge transfer device
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101017775A (en) * 2006-12-19 2007-08-15 北京大学 Method for Reducing Stress Between Gallium Nitride Single Crystal Film and Heterogeneous Substrate
CN111128843A (en) * 2019-12-27 2020-05-08 深圳市华星光电半导体显示技术有限公司 Transfer method of Micro LED

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101017775A (en) * 2006-12-19 2007-08-15 北京大学 Method for Reducing Stress Between Gallium Nitride Single Crystal Film and Heterogeneous Substrate
CN111128843A (en) * 2019-12-27 2020-05-08 深圳市华星光电半导体显示技术有限公司 Transfer method of Micro LED

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