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CN111584474B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN111584474B
CN111584474B CN201911409782.3A CN201911409782A CN111584474B CN 111584474 B CN111584474 B CN 111584474B CN 201911409782 A CN201911409782 A CN 201911409782A CN 111584474 B CN111584474 B CN 111584474B
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pressing
semiconductor device
manufacturing
tool
contact members
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CN201911409782.3A
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CN111584474A (zh
Inventor
万·阿札·宾·万·马特
横山岳
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/04—Heating appliances
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • B23K3/087—Soldering or brazing jigs, fixtures or clamping means
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
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    • H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494—Heating methods for reflowing of solder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps
    • H05K3/4015—Surface contacts, e.g. bumps using auxiliary conductive elements, e.g. pieces of metal foil, metallic spheres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
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Abstract

本发明提供半导体装置的制造方法。能够可靠地接合接触部件。将设定于平板状的按压工具(4)的主面的按压区域(4a)配置于接触部件(2a～2c)上。然后，边加热，边使按压工具(4)的按压区域(4a)随着在层叠基板(1)产生的翘曲而倾斜，将接触部件(2a～2c)朝向层叠基板(1)按压。由此，在用于接合接触部件(2a～2c)的按压时，即使因加热而在层叠基板(1)产生翘曲，接触部件(2a～2c)的位置偏移，也能够将接触部件(2a～2c)可靠地朝向层叠基板(1)按压。

Description

半导体装置的制造方法
技术领域
本发明涉及半导体装置的制造方法。
背景技术
包含IGBT(Insulated Gate Bipolar Transistor：绝缘栅双极型晶体管)、功率MOSFET(Metal Oxide Semiconductor Field Effect Transistor：金属氧化物半导体场效应晶体管)等半导体元件的半导体装置例如作为电力变换装置被利用。这样的半导体装置包括陶瓷电路基板，该陶瓷电路基板具有绝缘层，以及形成于绝缘层的正面且配置有半导体元件的多个电路图案层。此外，在电路图案层的预定区域上，介由焊料设置有用于安装外部连接端子的筒状的接触部件。
在制造这样的半导体装置时，首先，在陶瓷电路基板的电路图案层的预定区域上介由焊料配置接触部件。然后，在该接触部件上配置有按压工具的状态下加热。这样使焊料熔融，用按压工具将接触部件按压到陶瓷电路基板侧，使焊料固化。通过这样的回流焊接工序，能够在陶瓷电路基板的电路图案层的预定区域进行接触部件的焊料接合(例如参照专利文献1)。
另外，专利文献2公开了如下的工具，该工具具有由主体部和配置于该主体部上的框部件构成的台座、以及配置于主体部上且框部件中的多个定位部件。在定位部件上表面的孔配置有电子部件。记载了定位部件在台座的主体部上能够变位地被夹持。但是，未记载由于定位部件沿着主体部上移动，所以在框内多个定位部件可能被倾斜地配置。
另外，专利文献3公开了如下的焊接工具，该焊接工具是可以用于引线框的工具，其主体部在长度方向被分割成多个，且各分割体介由连结方棒连结，此外，在上述连结棒与分割体之间设置有允许在主体部长度方向上相对移动的间隙的焊接工具。该文献为了降低加热时的工具的翘曲的影响而将工具分割。
现有技术文献
专利文献
专利文献1：日本特开2014-187179号公报
专利文献2：日本特开2015-91607号公报
专利文献3：日本实开昭63-11168号公报
发明内容
技术问题
上述的陶瓷电路基板在绝缘层的背面形成有面积比形成于正面的电路图案层的面积大的金属层。因此，具备这样的热膨胀率不同的构成的陶瓷电路基板如果在回流焊接工序中被加热，则(相对于重力方向)向下凸而产生翘曲。即使利用按压工具按压产生了翘曲的陶瓷电路基板上的接触部件，也会在按压工具和接触部件中产生间隙。因此，无法利用按压工具将接触部件适当地朝向陶瓷电路基板按压而使接触部件与陶瓷电路基板无法接合，半导体装置的品质可能降低。
本发明是鉴于这样的情况而完成的，目的在于提供能够可靠地接合接触部件的半导体装置的制造方法。
技术方案
根据本发明的一个观点，提供一种半导体装置的制造方法，包括：准备层叠基板和多个接触部件的工序，上述层叠基板具有绝缘层、形成于上述绝缘层的正面的电路图案层、以及形成于上述绝缘层的背面且面积比上述电路图案层的面积大的金属层；在上述层叠基板的上述电路图案层上介由接合部件分别配置上述多个接触部件的工序；将设定于平板状的按压工具的主面的按压区域配置于上述多个接触部件上的按压前工序；以及边加热，边使上述按压工具的上述按压区域随着在上述层叠基板产生的翘曲而倾斜，将上述多个接触部件朝向上述层叠基板按压的按压工序。
发明效果
根据公开的技术，能够提供即使因接合时的加热而在层叠基板产生翘曲，也能够可靠地接合接触部件，能够抑制半导体装置的品质降低的半导体装置的制造方法。
附图说明
图1是用于说明第1实施方式的半导体装置的制造方法的各工序的图。
图2是表示第2实施方式的半导体装置的俯视图。
图3是表示第2实施方式的半导体装置的侧视图。
图4是表示第2实施方式的半导体装置的制造方法的流程图的图。
图5是用于说明第2实施方式的半导体装置的制造方法的在基板定位工具设置陶瓷电路基板的工序的俯视图。
图6是用于说明第2实施方式的半导体装置的制造方法的在基板定位工具设置陶瓷电路基板的工序的截面图。
图7是用于说明第2实施方式的半导体装置的制造方法的对陶瓷电路基板涂布焊料的工序的俯视图。
图8是用于说明第2实施方式的半导体装置的制造方法的设置部件定位工具的工序的俯视图。
图9是用于说明第2实施方式的半导体装置的制造方法的设置部件定位工具的工序的截面图。
图10是用于说明第2实施方式的半导体装置的制造方法的利用部件定位工具设置接触部件的工序的俯视图。
图11是用于说明第2实施方式的半导体装置的制造方法的利用部件定位工具设置接触部件的工序的截面图。
图12是用于说明第2实施方式的半导体装置的制造方法的设置按压工具的工序的俯视图。
图13是用于说明第2实施方式的半导体装置的制造方法的设置按压工具的工序的截面图。
图14是第2实施方式的半导体装置的制造方法中使用的按压工具的俯视图。
图15是第2实施方式的半导体装置的制造方法中使用的按压工具的主要部分截面图。
图16是用于说明第2实施方式的半导体装置的制造方法的利用按压工具进行的回流焊接工序的截面图。
符号说明
1：层叠基板
1a、11：绝缘层
1b1、1b2、12：电路图案层
1c、13：金属层
2a～2c、30、30a～30j：接触部件
3a～3c：接合部件
4、80：按压工具
4a、83：按压区域
10：陶瓷电路基板
20：半导体元件
31：焊料
35：键合线
40：外部连接端子
45：封装部件
50：半导体装置
60：基板定位工具
61：收纳部
62：导销
70：部件定位工具
72、82：引导孔
73：元件引导部
74：接触引导部
81：框部
84～87：按压块
84a～87a：按压面
84b～87b、84c～87c：支撑部
84b1：凸部
85b1：凹部
84d～87d：按压部
T：间隙
R：区域
具体实施方式
[第1实施方式]
以下，参照附图，使用图1对第1实施方式的半导体装置的制造方法进行说明。图1是用于说明第1实施方式的半导体装置的制造方法的各工序的图。应予说明，在图1的(A)～图1的(C)中，以时间序列的方式示出半导体装置的制造方法中的特别是有关回流焊接工序的工序的侧视图。另外，图1的(D)示出针对图1的(C)的工序的参考例。
首先，准备层叠基板1和多个接触部件2a～2c。层叠基板1具有绝缘层1a、形成于绝缘层1a的正面的电路图案层1b1、1b2以及形成于绝缘层1a的背面且面积比电路图案层1b1、1b2的面积大的金属层1c。对于这样的层叠基板1而言，在绝缘层1a、与电路图案层1b1、1b2和金属层1c中，热膨胀率不同。另外，接触部件2a～2c例如是筒形，且在内部形成有贯通孔。这样的接触部件2a～2c插入有省略图示的销状的外部连接端子。
在这样的层叠基板1的电路图案层1b1、1b2上分别涂布接合部件3a～3c，在接合部件3a～3c上分别配置接触部件2a～2c(图1的(A))。
接下来，作为按压前工序，这样在配置于层叠基板1的电路图案层1b1、1b2上的接触部件2a～2c上配置设定于平板状的按压工具4的主面的按压区域4a(图1的(B))。
接下来，作为按压工序，在该状态下，边加热边将按压工具4向层叠基板1侧按压。通过此时的加热，层叠基板1因为绝缘层1a与电路图案层1b1、1b2和金属层1c的热膨胀率之差而向(相对于重力方向)下凸而产生翘曲。与这样的层叠基板1相对应地，按压工具4的按压区域4a也随着在层叠基板1产生的翘曲而发生倾斜。由此，即使配置于产生了翘曲的层叠基板1的接触部件2a～2c的位置偏移，也能够通过按压区域4a随着层叠基板1的翘曲而发生变化的按压工具4将接触部件2a～2c适当地朝向层叠基板1按压(图1的(C))。
在此，对按压工具4的按压区域4a不随着层叠基板1的翘曲而发生变化地进行按压工序的情况进行说明。如图1的(D)所示，配置于产生了翘曲的层叠基板1的接触部件2a～2c的位置发生偏移。因此，无法利用按压工具4将接触部件2a～2c适当地朝向层叠基板1按压。另外，在接触部件2b与按压工具4之间会产生间隙，甚至无法进行按压。
这样，在上述半导体装置的制造方法中，首先，准备层叠基板1和多个接触部件2a～2c，该层叠基板1具有绝缘层1a、形成于绝缘层1a的正面的电路图案层1b1、1b2以及形成于绝缘层1a的背面且面积比电路图案层1b1、1b2的面积大的金属层1c。并且，在层叠基板1的电路图案层1b1、1b2上介由接合部件3a～3c分别配置接触部件2a～2c。然后，将设定于平板状的按压工具4的主面的按压区域4a配置在接触部件2a～2c上。然后，边加热，边使按压工具4的按压区域4a随着在层叠基板1产生的翘曲而倾斜，将接触部件2a～2c朝向层叠基板1按压。由此，在进行用于接合接触部件2a～2c的按压时，即使因加热而在层叠基板1产生翘曲，接触部件2a～2c的位置偏移，也能够将接触部件2a～2c朝向层叠基板1可靠地按压。
[第2实施方式]
在第2实施方式中，对第1实施方式的半导体装置的制造方法进行更具体的说明。首先，使用图2和图3对半导体装置进行说明。图2是表示第2实施方式的半导体装置的俯视图，图3是表示第2实施方式的半导体装置的侧视图。应予说明，图2省略了封装部件的图示。在图3中，用虚线表示封装部件。另外，在第2实施方式中，对于多个电路图案层12、多个半导体元件20、多个接触部件30、多个键合线35、多个外部连接端子40均不作区分，标注相同的符号并以相同的符号进行说明。应予说明，针对这些构成以外的构成，多个部件之间均不作区分，标注相同的符号并以相同的符号进行说明。但是，针对接触部件，将多个接触部件30中的一部分接触部件30记为接触部件30a～30j。
如图2和图3所示，半导体装置50具有陶瓷电路基板10(层叠基板)和接合到陶瓷电路基板10的正面的半导体元件20。半导体装置50具有接合到陶瓷电路基板10的正面的接触部件30、30a～30j。另外，半导体装置50具有将陶瓷电路基板10的正面与半导体元件20的主电极电连接的键合线35。另外，在接触部件30、30a～30j压入并安装有外部连接端子40。此外，半导体装置50与陶瓷电路基板10的正面的半导体元件20一起，以安装于接触部件30、30a～30j的外部连接端子40的前端部突出的方式被封装部件45封装。应予说明，以下，在不特别区分接触部件30、30a～30j的情况下，作为接触部件30进行说明。
陶瓷电路基板10具有绝缘层11、形成于绝缘层11的正面的多个电路图案层12和形成于绝缘层11的背面的金属层13。绝缘层11由导热性优异的氧化铝、氮化铝、氮化硅等导热性高的陶瓷构成。多个电路图案层12由导电性优异的材质构成。作为这样的材质，例如由银、铜、镍或至少含有这些中的一种的合金等构成。金属层13由导热性优异的铝、铁、银、铜或至少含有这些中的一种的合金等金属构成。
作为具有这样的构成的陶瓷电路基板10，例如可以使用DCB(Direct CopperBonding：直接铜键合)基板、AMB(Active Metal Brazed：活性金属钎焊)基板。还可以介由混入有金属氧化物的填料的硅等导热脂而在这样的陶瓷电路基板10的金属层13安装冷却器(省略图示)来提高散热性。此时的冷却器例如由导热性优异的铝、铁、银、铜或至少含有这些中的一种的合金等构成。另外，作为冷却器，可以使用散热片或由多个散热片构成的散热器和利用水冷的冷却装置等。另外，散热基板可以与这样的冷却器一体地构成。在该情况下，由导热性优异的铝、铁、银、铜或至少含有这些中的一种的合金构成。并且，为了提高耐腐蚀性，可以形成在例如通过对镍等材料进行镀覆处理等而与冷却器一体化的散热基板的表面。具体而言，除了镍以外，还有镍-磷合金、镍-硼合金等。
应予说明，绝缘层11在俯视时例如呈矩形。另外，金属层13在俯视时面积比绝缘层11的面积小，成为比电路图案层12的总面积大的矩形。因此，陶瓷电路基板10例如呈矩形。
半导体元件20由硅或碳化硅构成，例如包含IGBT、功率MOSFET等开关元件。这样的半导体元件20例如在背面具备漏电极(或集电电极)作为主电极，在正面具备栅电极和源电极(或发射电极)作为主电极。另外，半导体元件20根据需要包括SBD(Schottky BarrierDiode：肖特基势垒二极管)、FWD(Free Wheeling Diode：续流二极管)等二极管。这样的半导体元件20在背面具备阴极作为主电极，在正面具备阳极作为主电极。上述的半导体元件20的其背面侧接合到预定的电路图案层(省略图示)上。应予说明，半导体元件20介由焊料(省略图示)接合到电路图案层12上。针对焊料，在后面叙述。另外，虽然省略了图示，但是可以根据需要配置例如引线框、外部连接端子(销端子、接触部件等)、电子部件(热敏电阻、电流传感器)等来代替半导体元件20。
键合线35由导电性优异的材质构成。作为这样的材质，例如由金、银、铜、铝或至少含有这些中的一种的合金等构成。另外，将半导体元件20的栅电极与电路图案层12之间电连接的键合线35的直径例如为110μm以上且130μm以下，其平均为125μm。其他的键合线35的直径例如为350μm以上且450μm以下，其平均为400μm。
封装部件45包含例如马来酰亚胺改性环氧树脂、马来酰亚胺改性酚醛树脂、马来酰亚胺树脂等热固性树脂和热固性树脂中含有的填充材料。作为这样的封装部件45的一个例子，包含环氧树脂和在环氧树脂中作为填料的二氧化硅、氧化铝、氮化硼或氮化铝等填充材料。
接下来，按照图4所示的流程图，使用表示各工序和各工具的图5～图16对这样的半导体装置50的制造方法进行说明。图4是表示第2实施方式的半导体装置的制造方法的流程图的图。图5是用于说明第2实施方式的半导体装置的制造方法的在基板定位工具设置陶瓷电路基板的工序的俯视图，图6是用于说明第2实施方式的半导体装置的制造方法的在基板定位工具设置陶瓷电路基板的工序的截面图。
图7是用于说明第2实施方式的半导体装置的制造方法的对陶瓷电路基板涂布焊料的工序的俯视图，图8是用于说明第2实施方式的半导体装置的制造方法的设置部件定位工具的工序的俯视图，图9是用于说明第2实施方式的半导体装置的制造方法的设置部件定位工具的工序的截面图。
图10是用于说明第2实施方式的半导体装置的制造方法的利用部件定位工具设置接触部件的工序的俯视图，图11是用于说明第2实施方式的半导体装置的制造方法的利用部件定位工具设置接触部件的工序的截面图。
图12是用于说明第2实施方式的半导体装置的制造方法的设置按压工具的工序的俯视图，图13是用于说明第2实施方式的半导体装置的制造方法的设置按压工具的工序的截面图。
图14是第2实施方式的半导体装置的制造方法中使用的按压工具的俯视图，图15是第2实施方式的半导体装置的制造方法中使用的按压工具的主要部分截面图。图16是用于说明第2实施方式的半导体装置的制造方法的利用按压工具进行的回流焊接工序的截面图。应予说明，图14所示的按压工具80的俯视图是与设置于部件定位工具70的按压工具80的与该部件定位工具70对置的一侧的俯视图。应予说明，图6、图9、图11、图13是图5、图8、图10、图12中的单点划线X-X处的截面图。另外，图15是图12中的单点划线X1-X1处的截面图。
半导体装置50按照以下所示的制造工序(流程图)制造。以下的各制造工序根据需要人为地或通过制造装置来执行。
[步骤S10]准备半导体元件20、陶瓷电路基板10和接触部件30。不限于这些部件，预先准备半导体装置50的制造所需要的部件等。
[步骤S11]如图5和图6所示，将陶瓷电路基板10设置于基板定位工具60。基板定位工具60在俯视时呈矩形，在中心部形成有构成为收纳陶瓷电路基板10的凹部状的收纳部61。另外，基板定位工具60在上表面的四角分别形成有导销62。另外，基板定位工具60由复合陶瓷材料、碳等耐热性优异的材质构成。陶瓷电路基板10以电路图案层12为正面而载置于这样的基板定位工具60的收纳部61。
[步骤S12]如图7所示，在收纳于基板定位工具60的收纳部61的陶瓷电路基板10的电路图案层12上的半导体元件20和接触部件30的设置区域分别涂布焊料31。应予说明，这样的陶瓷电路基板10的电路图案层12的上述焊料31能够通过例如丝网印刷涂布。应予说明，对图7所示的焊料31而言，针对半导体元件20的焊料31用方形表示，针对接触部件30的焊料31用圆形表示。
另外，上述的焊料31例如由以含有锡-银-铜的合金、含有锡-锌-铋的合金、含有锡-铜的合金、含有锡-银-铟-铋的合金中的至少任一种合金为主要成分的无铅焊料构成。除此以外，含有具有除去电路图案层12上的氧化物的功能的助熔剂。助熔剂例如含有环氧树脂、羧酸、松香树脂、活性剂、溶剂，还可以根据需要含有其他的成分。此外，这样的焊料31可以含有镍、锗、钴或硅等添加物。
[步骤S13]如图8和图9所示，相对于基板定位工具60设置部件定位工具70。部件定位工具70也由复合陶瓷材料、碳等耐热性优异的材质构成。部件定位工具70成为俯视时为矩形的板状。部件定位工具70在四角分别形成有引导孔72。在各引导孔72插通基板定位工具60的各导销62，将部件定位工具70设置于基板定位工具60。另外，部件定位工具70构成为使元件引导部73和接触引导部74开口。如上所述，部件定位工具70如果设置于基板定位工具60，则元件引导部73和接触引导部74与陶瓷电路基板10的接触部件30和半导体元件20的各自的设置区域(涂布有焊料31)分别对置。应予说明，元件引导部73形成得比半导体元件20的尺寸大一圈，接触引导部74形成得比接触部件30的尺寸大一圈。
[步骤S14]如图10和图11所示，通过安装装置(省略图示)在部件定位工具70的元件引导部73和接触引导部74分别设置半导体元件20和接触部件30。
[步骤S15]如图12和图13所示，将按压工具80设置于部件定位工具70上。在此，参照图12～图15对按压工具80进行说明。按压工具80也由复合陶瓷材料、碳等耐热性优异的材质构成。如图12和图14所示，这样的按压工具80具备框部81和设置于框部81的按压块84～87。框部81在四角形成有引导孔82，在中央部，按压区域83开口。
按压块84～87分别具备平坦的按压面84a～87a，按压面84a～87a组合成平面状而构成平坦的按压区域83。应予说明，按压块84～87的按压面84a～87a与将按压工具80设置于部件定位工具70上时的、按压工具80的与部件定位工具70对置的背面相对应。另外，按压工具80的背面的相反侧为正面。此时，按压块84～87以在按压工具80的按压区域83分别隔开间隙T的方式组合。并且，按压块84～87间的边界线构成为不是沿着通过按压区域83的中心点的用图12中虚线表示的十字的线，而是与通过按压区域83的中心点的十字的线偏移(从中心点向预定方向位置偏移)。此外，按压块84～87中的例如86的按压面86a、按压块87的按压面87a在俯视时成为键型而啮合(由图12中的区域R包围的区域)。
在按压块84～87的正面的周缘部分，与按压工具80的宽度方向平行地形成有支撑部84b～87b。支撑部84b～87b的(相对于宽度方向垂直方向的)宽度构成为比间隙T长。另外，在按压块84～87的正面的周缘部分，与按压工具80的长度方向平行地形成有支撑部84c～87c。支撑部84c～87c的(相对于长度方向垂直方向的)宽度构成为比间隙T长。应予说明，形成于按压块84～87的按压面84a～87a的支撑部84b～87b、84c～87c的形成位置、形成个数、形状不限于图12的情况。可以根据按压块84～87的尺寸等适当设计。另外，如图12和图15所示，按压块84、85在相互对置的面分别形成有凸部84b1和凹部85b1。因此，相互邻接的按压块84、85嵌合有凸部84b1和凹部85b1。按压块85在按压块84～87中按压面最广。因此，虽然详情后述，但是在将按压工具80设置于部件定位工具70时，按压块85容易从按压区域83向部件定位工具70侧脱离。因此，利用凸部84b1和凹部85b1使按压块85难以脱离。因此，这样的按压块84～87相对于部件定位工具70隔开间隙地被框部81支撑。
另外，在按压块84～87的按压面84a～87a设置有按压部84d～87d(在图12中用虚线表示按压部84d～87d的配置位置)。如果将按压工具80设置于部件定位工具70上，则按压部84d～87d与配置在陶瓷电路基板10上的接触部件30分别对应。例如，如果将按压工具80设置于部件定位工具70上，则如图13所示，按压块85的按压部85d、按压块84的按压部84d分别抵接到接触部件30a～30j。
[步骤S16]以在步骤S15中设置有按压工具80的状态下搬入到回流炉中，对炉内进行减压并在回流处理温度下进行加热处理(回流焊接工序)。回流处理温度例如为250℃以上且300℃以下。
在这样的温度下，陶瓷电路基板10因为绝缘层11与电路图案层12和金属层13的热膨胀率之差而向(相对于重力方向)下凸而产生翘曲。这样，如果产生陶瓷电路基板10的翘曲，则被接触部件30从背面侧支撑的按压工具80的按压块84～87向部件定位工具70侧落下。此时，按压块84～87的周缘部分通过支撑部84b～87b、84c～87c被框部81支撑。特别是，支撑部84b～87b、84c～87c的宽度构成为比边界的间隙T宽。另外，按压块84～87的边界线构成为不是沿着通过按压区域83的中心点的图12中的十字的线，而是与通过按压区域83的中心点的十字的线偏移。因此，例如如图16所示，按压块84～87容易以支撑部84b～87b、84c～87c为支点，从它们的边界线侧向部件定位工具70侧落下。
另一方面，按压块86的按压面86a、按压块87的按压面87a成为键型并啮合。因此，按压块86、87容易从边界线侧向部件定位工具70侧落下，并且难以分离。由此，在取下按压工具80时等容易进行按压工具80的操作。
这样，使按压工具80的按压区域83随着在陶瓷电路基板10产生的翘曲而倾斜。由此，即使配置于产生了翘曲的陶瓷电路基板10的接触部件30的位置偏移，也能够利用按压区域83随着陶瓷电路基板10的翘曲而变化的按压工具80将接触部件30适当地朝向陶瓷电路基板10按压。
由此，使焊料31分别熔融，将各电路图案层12与半导体元件20和接触部件30电连接。并且，通过使熔融的焊料31凝固，从而将半导体元件20和接触部件30接合于各电路图案层12。
[步骤S17]从半导体元件20和接触部件30接合于各电路图案层12的陶瓷电路基板10取下基板定位工具60、部件定位工具70和按压工具80。并且，使用未图示的超声波焊接工具，利用键合线将陶瓷电路基板10的各电路图案层12的预定区域与半导体元件20电连接。另外，这样，在连接了键合线35之后，向各接触部件30压入外部连接端子(省略图示)。
[步骤S18]利用封装部件45将陶瓷电路基板10上的半导体元件20、接触部件30、键合线35等封装。
以上，在步骤S11中，使用基板定位工具60，在步骤S13中，使用部件定位工具70，在步骤S15中，使用按压工具80。使用这样的基板定位工具60、部件定位工具70和按压工具80，制造图2和图3所示的半导体装置50。
这样，在上述半导体装置50的制造方法中，首先，准备陶瓷电路基板10和多个接触部件30，上述陶瓷电路基板10具有绝缘层11、形成于绝缘层11的正面的电路图案层12和形成于绝缘层11的背面且面积比电路图案层12的面积大的金属层13。并且，在陶瓷电路基板10的电路图案层12上介由焊料31分别配置接触部件30。然后，将构成设置于平板状的按压工具80的按压区域83的按压块84～87配置在接触部件30上。然后，边加热，边使构成按压工具80的按压区域83的按压块84～87随着在陶瓷电路基板10产生的翘曲而倾斜，将接触部件30朝向陶瓷电路基板10按压。由此，在用于接合接触部件30的按压时，即使因加热而在陶瓷电路基板10产生翘曲，接触部件30的位置偏移，也能够将接触部件30可靠地朝向陶瓷电路基板10按压。

Claims (8)

1.一种半导体装置的制造方法，其特征在于，包括：
准备层叠基板和多个接触部件的工序，所述层叠基板具有绝缘层、形成于所述绝缘层的正面的电路图案层、以及形成于所述绝缘层的背面且面积比所述电路图案层的面积大的金属层；
在所述层叠基板的所述电路图案层上介由接合部件分别配置所述多个接触部件的工序；
将设定于平板状的按压工具的主面的按压区域配置在所述多个接触部件上的按压前工序；以及
边加热，边使所述按压工具的所述按压区域随着在所述层叠基板产生的翘曲而倾斜，将所述多个接触部件朝向所述层叠基板按压的按压工序。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，所述按压工具包括多个按压块，所述多个按压块分别具备按压面，多个按压面组合成平面状而构成所述按压区域。
3.根据权利要求2所述的半导体装置的制造方法，其特征在于，在所述按压前工序中，所述按压工具的所述多个按压面被所述多个接触部件支撑，
在所述按压工序中，通过随着所述层叠基板的翘曲的所述多个接触部件的移动，所述多个按压面也分别移动而将所述多个接触部件朝向所述层叠基板按压。
4.根据权利要求2或3所述的半导体装置的制造方法，其特征在于，在所述按压工具中，所述多个按压面之间的边界线从所述按压区域的中心点向预定方向位置偏移。
5.根据权利要求2所述的半导体装置的制造方法，其特征在于，所述按压工具包含框部以及设置于所述框部中的所述多个按压块。
6.根据权利要求5所述的半导体装置的制造方法，其特征在于，在所述多个按压块的所述多个按压面的相反侧的面的周缘部分别形成有被所述框部支撑的支撑部。
7.根据权利要求6所述的半导体装置的制造方法，其特征在于，多个支撑部的宽度比所述多个按压块之间的间隙宽。
8.根据权利要求7所述的半导体装置的制造方法，其特征在于，在所述多个按压块中的按压面的面积最大的最大按压块和与所述最大按压块相邻的相邻按压块相对置的面分别形成有凹部和嵌合到所述凹部的凸部。
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