CN111580358B - Exposure system and article manufacturing method - Google Patents
Exposure system and article manufacturing method Download PDFInfo
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- CN111580358B CN111580358B CN202010089788.3A CN202010089788A CN111580358B CN 111580358 B CN111580358 B CN 111580358B CN 202010089788 A CN202010089788 A CN 202010089788A CN 111580358 B CN111580358 B CN 111580358B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract
An exposure system and an article manufacturing method are provided which are advantageous in terms of cost and productivity. The exposure system includes: a1 st exposure device for exposing the 1 st imaging area of the substrate; a 2 nd exposure device for exposing a 2 nd photographing region of the substrate different from the 1 st photographing region; the mark forming device forms alignment marks at positions of the substrate different from the 1 st shooting area and the 2 nd shooting area. The 1 st exposure device includes a1 st mark detection unit for detecting an alignment mark formed on the substrate by the mark formation device, and the 2 nd exposure device includes a 2 nd mark detection unit for detecting an alignment mark formed on the substrate by the mark formation device, and determines a correction parameter for correcting an alignment error of the 2 nd imaging region with respect to the 1 st imaging region based on information of the alignment mark detected by the 1 st mark detection unit in the 1 st exposure device and information of the alignment mark detected by the 2 nd mark detection unit, and exposes the 2 nd imaging region while reflecting the correction parameter.
Description
Technical Field
The present invention relates to an exposure system and an article manufacturing method.
Background
In the manufacture of flat panel displays (hereinafter referred to as "FPDs") such as liquid crystal displays and organic EL displays, an exposure device that transfers a pattern of a mask onto a substrate is used. In the manufacture of FPDs, to improve the efficiency of use of glass substrates, multi Module on Glass (multimode on glass, MMG) production methods in which panels are transferred to different regions on 1 glass substrate can be used. In addition, in order to improve the production efficiency when MMG is handled, a method of using a plurality of exposure apparatuses has been studied. For example, first, an alignment mark (hereinafter also simply referred to as a "mark") is formed at a predetermined position on a substrate with a 1 st exposure apparatus, and a 1 st exposure is performed for a 1 st shot (shot) area. Then, the mark of the substrate is detected by a 2 nd exposure device, and alignment is performed based on the detection result, and then the 2 nd exposure is performed for the 2 nd imaging region (see, for example, patent documents 1 and 2).
The 2 nd exposure device needs to detect the mark formed by the 1 st exposure device with high accuracy. Patent document 3 discloses that measurement conditions are negotiated between measurement and inspection devices so that measurement errors when the same mark is measured between a plurality of measurement and inspection devices are reduced.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication No. 2005-92137
Patent document 2: japanese patent laid-open No. 2007-199711
Patent document 3: international publication No. 2007/102484
Disclosure of Invention
In the prior art, in order to accurately detect a mark by the 2 nd exposure device, it is necessary to form the mark with high accuracy by the 1 st exposure device. However, in practice, the formation conditions of the marks are different due to differences in the substrate used, the resist on the substrate, and the like, so that the accuracy of forming the marks in the 1 st exposure apparatus is not stable. Therefore, the accuracy of the mark formed by the 1 st exposure device may be insufficient and the detection accuracy of the mark by the 2 nd exposure device may be poor. In this case, even if the measurement conditions are negotiated between the measurement and inspection apparatuses as in the conventional technique described above, the flag cannot be detected. If the flag cannot be detected, production is stopped at this point in time, and productivity is lowered. However, the cost increases when a mark forming apparatus with high accuracy of forming marks is introduced.
The present invention aims to provide an exposure system advantageous in terms of cost and productivity, for example.
According to the 1 st aspect of the present invention, there is provided an exposure system comprising: a1 st exposure device for exposing the 1 st imaging area of the substrate; a 2 nd exposure device that exposes a 2 nd imaging region of the substrate different from the 1 st imaging region; and a mark forming device for forming an alignment mark at a position of the substrate different from the 1 st imaging area and the 2 nd imaging area, wherein the 1 st exposure device includes a1 st mark detecting unit for detecting the alignment mark formed on the substrate by the mark forming device, the 2 nd exposure device includes a 2 nd mark detecting unit for detecting the alignment mark formed on the substrate by the mark forming device, and the 2 nd exposure device determines a correction parameter for correcting an alignment error of the 2 nd imaging area with respect to the 1 st imaging area based on the information of the alignment mark detected by the 1 st mark detecting unit in the 1 st exposure device and the information of the alignment mark detected by the 2 nd mark detecting unit, and reflects the correction parameter to expose the 2 nd imaging area.
According to the 2 nd aspect of the present invention, there is provided a method for manufacturing an article, comprising: a step of exposing a substrate using the exposure system according to the 1 st aspect; and developing the substrate after the exposure performed in the step, and manufacturing an article from the substrate after the development.
According to the present invention, for example, an exposure system advantageous in terms of cost and productivity can be provided.
Drawings
Fig. 1 is a diagram showing a structure of an exposure system in the embodiment.
Fig. 2 is a diagram showing a structure of an exposure system in the embodiment.
Fig. 3 is a diagram showing an example of a photographing region and a mark on a substrate.
Fig. 4 is a diagram illustrating a conventional exposure control process.
Fig. 5 is a flowchart showing a conventional exposure control process.
Fig. 6 is a diagram illustrating exposure control processing in the embodiment.
Fig. 7 is a flowchart showing exposure control processing in the embodiment.
(Symbol description)
ES: an exposure system; MPA1: a1 st exposure device; MPA2: a2 nd exposure device; GS: a management device; TR: a conveying mechanism; h: a frame body.
Detailed Description
Hereinafter, embodiments will be described in detail with reference to the drawings. The following embodiments do not limit the invention according to the claims. Although the embodiments described above describe a plurality of features, these plurality of features are not all essential to the invention, and a plurality of features may be combined arbitrarily. In the drawings, the same or similar structures are denoted by the same reference numerals, and redundant description thereof is omitted.
Fig. 1 and 2 show a schematic configuration of an exposure system ES according to the embodiment. Fig. 1 is a side view of a main portion of an exposure system ES, and fig. 2 is a top view of a main portion of an exposure system ES. In the present specification, the direction is represented in an XYZ coordinate system in which a horizontal plane is an XY plane. The substrate PL is placed on the substrate tables PL1 and PL2 such that the surface thereof is parallel to the horizontal plane (XY plane), and the optical axes of the projection optical systems P1 and P2 are parallel to the Z axis orthogonal to the XY plane. The exposure system ES in the present embodiment has a plurality of exposure apparatuses. The example of fig. 1 is an example having 2 exposure devices, and the 1 st exposure device MPA1 and the 2 nd exposure device MPA2 are provided in the housing H. However, it is not necessary that the plurality of exposure devices are housed in 1 housing.
The 1 st exposure apparatus MPA1 includes a master stage MS1, a projection optical system P1, a control unit CNT1, an image processing unit IP1, a substrate stage PS1, a mark forming apparatus MF, and a mark detection unit AS1 (1 st mark detection unit). The master stage MS1 holds a master M1 on which a pattern is formed. The projection optical system P1 projects the master M1 held on the master stage MS1 onto the substrate PL. The substrate stage PS1 holds a substrate PL. The mark forming apparatus MF forms an alignment mark (hereinafter simply referred to as "mark") at a predetermined position on the substrate PL with respect to the edge SE of the substrate PL shown in fig. 2. The marks may be formed in any of a latent image manner, a laser ablation manner, and the like. The mark forming apparatus MF may be provided outside the 1 st exposure apparatus MPA 1. The mark detection unit AS1 detects a mark formed on the substrate PL. For example, the mark detection unit AS1 captures a mark formed on the substrate PL AS a mark image, and supplies the mark image to the image processing unit IP1. The image processing unit IP1 detects the position of the marker by performing signal processing on the marker image. The control unit CNT1 controls each component of the 1 st exposure apparatus MPA 1.
The 2 nd exposure device MPA2 includes a master stage MS2, a projection optical system P2, a control unit CNT2, an image processing unit IP2, a substrate stage PS2, and a mark detection unit AS2 (2 nd mark detection unit). These have the same functions AS the original mount MS1, the projection optical system P1, the control unit CNT1, the image processing unit IP1, the substrate mount PS1, and the mark detection unit AS1 in the 1 st exposure apparatus MPA1, respectively. Further, it is not necessary to provide the mark forming apparatus MF as the 1 st exposure apparatus MPA1 in the 2 nd exposure apparatus MPA 2.
The 1 st exposure device MPA1 and the 2 nd exposure device MPA2 are controlled as a whole by the control device GS. The control device GS may include an operation unit OP, a main control unit MCNT, and a storage unit M. The operation unit OP may include an input device (keyboard, mouse, etc.) and an output device (display device, etc.) which are user interfaces. The main control unit MCNT controls the operations of the 2 exposure devices as a whole. It is also possible to consider that 1 control unit is constituted by the main control unit MCNT, the control unit CNT1, and the control unit CNT 2. For example, the functions of the control unit CNT1 and the image processing unit IP1 of the 1 st exposure apparatus MPA1 and the control unit CNT2 and the image processing unit IP2 of the 2 nd exposure apparatus MPA2 may be assumed to be those of the main control unit MCNT of the management apparatus GS. The storage unit M stores data such as various parameters related to the exposure processing, including a control program.
The exposure system ES includes a transport mechanism TR shared by the 1 st exposure apparatus MPA1 and the 2 nd exposure apparatus MPA2, and the 1 st exposure apparatus MPA1 and the 2 nd exposure apparatus MPA2 carry in and carry out the substrate by the transport mechanism TR.
In an embodiment, the substrate PL is, for example, a glass substrate, and the exposure system ES exposes by a Multi Module on Glass (multimode on glass, MMG) production method of transferring the panel to different areas on 1 glass substrate. For example, as shown in fig. 3, first, a mark AM is formed at a predetermined position other than the imaging region (region where a pattern is formed) on the substrate PL by the 1 st exposure device, and 1 st exposure is performed for the 1 st imaging region EX 1. Then, the mark AM of the substrate PL is detected by the 2 nd exposure device MPA2, and the alignment is performed based on the detection result, and then the 2 nd exposure is performed for the 2 nd imaging region EX2 different from the 1 st imaging region EX 1. In an embodiment, the photographing region is rectangular, and the size of the photographing region can be managed by the length of a diagonal line (total pitch). In fig. 3, the size of the 1 st photographing region EX1 is denoted by TP1, the size of the 2 nd photographing region EX2 is denoted by TP2, and the size of the combined region of the 1 st photographing region EX1 and the 2 nd photographing region EX2 managed in the MMG production manner is denoted by TPA.
Fig. 4 is a schematic diagram showing a method of obtaining distance information for managing the size TPA of the bonded area in the MMG production method by the conventional technique. In the prior art, it is premised that the 1 st exposure apparatus forms the mark with high precision. Hereinafter, such a condition for forming a mark with high accuracy is referred to as an "ideal condition". In fig. 4, a mark RAM is formed on a substrate PL under ideal conditions by a mark forming apparatus MF of a1 st exposure apparatus MPA 1. Next, the mark RAM is imaged by the mark detection unit AS1 of the 1 st exposure apparatus MPA1 to obtain image data RIM1 (for example, bitmap-form image data) of the mark image. The image processing unit IP1 of the 1 st exposure apparatus MPA1 calculates a feature value RCH1 (not shown) of the marker RAM included in the marker image from the image data RIM 1. The feature quantity can be, for example, brightness. Further, the image processing unit IP1 calculates a relative distance AP1 between the marker and the reference position of the marker image in the image data RIM1 based on the feature value RCH 1. In the 1 st exposure device MPA1, exposure is performed by correcting the position of the imaging region based on the calculated relative distance AP1.
Next, the mark RAM is imaged by the mark detection unit AS2 of the 2 nd exposure device MPA2 to obtain image data RIM2 of the mark image. The feature amount RCH2 (not shown) included in the flag RAM of the image data RIM2 is calculated by the image processing section IP2 of the 2 nd exposure apparatus MPA 2. Further, the image processing unit IP2 calculates a relative distance AP2 between the marker and the reference position of the marker image in the image data RIM2 based on the feature value RCH 2. In the 2 nd exposure device MPA2, exposure is performed by correcting the position of the imaging region based on the calculated relative distance AP2.
Fig. 5 is a flowchart showing exposure control processing using a conventional MMG production method. In S100, the substrate PL is carried into the 1 st exposure apparatus MPA1 by the carrying mechanism TR and mounted on the substrate stage PS1. In S101, a mark RAM is formed at a predetermined position with respect to a side SE of the substrate PL by a mark forming apparatus MF of the 1 st exposure apparatus MPA 1. In S102, the mark RAM is imaged by the mark detection unit AS1 of the 1 st exposure apparatus MPA1 to obtain image data RIM1 of a mark image. In S103, the image processing unit IP1 of the 1 st exposure apparatus MPA1 calculates a feature value RCH1 of the marker RAM included in the marker image from the image data RIM1, and calculates a relative distance AP1 between the reference position and the marker from the feature value RCH 1.
In S104, it is determined whether the flag RAM is normally detected. In the case where the flag RAM is normally detected, the process advances to S105. On the other hand, if the flag RAM is not normally detected, the exposure process proceeds to S110 without being detected by the flag detection unit AS2 of the 2 nd exposure apparatus MPA2, and the exposure process is stopped by an error.
In S105, the 1 st exposure apparatus MPA1 corrects the position of the 1 st imaging area EX1 according to the relative distance AP1, and the 1 st imaging area EX1 is exposed. After the exposure of the 1 st imaging area EX1 is completed, in S106, the substrate PL is carried out of the 1 st exposure apparatus MPA1 by the carrying mechanism TR, carried into the 2 nd exposure apparatus MPA2, and mounted on the substrate stage PS2. In S107, the mark RAM is imaged by the mark detection unit AS2 of the 2 nd exposure device MPA2 to obtain an image RIM2 of the mark image. In S108, the image processing unit IP2 of the 2 nd exposure device MPA2 calculates the feature value RCH2 of the marker RAM included in the marker image from the image data RIM2, and calculates the relative distance AP2 between the reference position and the marker from the feature value RCH 2. In S109, the position of the 2 nd imaging region EX2 is corrected by the 2 nd exposure device MPA2 according to the relative distance AP2, and the 2 nd imaging region EX2 is exposed. By the exposure processing described above, the 2 nd imaging region EX2 with the relative distance AP2 as a reference is determined for the 1 st imaging region EX1 with the relative distance AP1 as a reference.
In the conventional MMG production method as described above, the accuracy of the size TPA of the joint area affects the accuracy of the relative distances AP1 and AP2 in addition to the accuracy of the sizes TP1 and TP2 of the 1 st and 2 nd imaging areas EX1 and EX 2. In order to improve the accuracy of the relative distances AP1 and AP2, it is necessary to obtain the feature amounts RCH1 and RCH2 in an ideal state. If these feature amounts are obtained in an ideal state, exposure with the size TPA of the bonding area maintained can be performed by the exposure treatment described above.
In order to obtain the feature amounts RCH1 and RCH2 in an ideal state, it is necessary to form a flag RAM in an ideal state. However, in practice, the formation conditions of the marks are different due to differences in the substrate used, the resist on the substrate, and the like, so that the accuracy of forming the marks in the 1 st exposure apparatus MPA1 is not stable. Therefore, the accuracy of the mark formed by the 1 st exposure apparatus MPA1 may be insufficient and the detection accuracy of the mark by the 2 nd exposure apparatus MPA2 may be poor. In this case, as a result, the relative positional relationship between the 1 st imaging region EX1 in S105 and the 2 nd imaging region EX2 in S109 cannot be managed accurately, so that the size TPA of the coupling region cannot be obtained with a desired accuracy. In addition, if the flag cannot be normally detected, the exposure process becomes an error stop in S110, so productivity is lowered.
Fig. 6 is a schematic diagram showing a method of obtaining distance information for managing the size of a bonded area in an MMG production method in an embodiment. In fig. 5, a mark MAM is formed on a substrate PL by a mark forming apparatus MF of a1 st exposure apparatus MPA 1. The mark MAM may not be formed under ideal conditions, and thus may be formed in an incomplete shape. Next, the mark MAM is imaged by the mark detection unit AS1 of the 1 st exposure apparatus MPA1 to obtain image data IM1 (e.g., bitmap-form image data) of the mark image. The image data IM1 is transferred from the 1 st exposure apparatus MPA1 to the 2 nd exposure apparatus MPA2 via the management apparatus GS (main control unit MCNT). In the conventional example (fig. 4), the position of the 1 st imaging area EX1 is corrected based on the image data RIM1 obtained by the mark detection unit AS1, and exposure is performed. In contrast, in the embodiment, the 1 st imaging region EX1 is exposed with respect to the edge SE of the substrate PL (an abutment portion (not shown) abutting against the substrate stage PS 1) instead of the image data RIM 1.
Next, the mark MAM is imaged by the mark detection unit AS2 of the 2 nd exposure device MPA2 to obtain image data IM2 of the mark image. The image processing unit IP2 of the 2 nd exposure device MPA2 calculates the feature quantity CH1 (1 st feature quantity) of the mark MAM included in the image data IM2, and calculates the feature quantity CH2 (2 nd feature quantity) of the mark MAM included in the image data IM2. The feature quantity can be at least one of brightness, contrast, and spectrum information, for example. Further, the image processing unit IP2 calculates a relative distance RD1 between the marks in the two images in accordance with an image processing method (for example, a phase-limited correlation method) using the feature quantity CH1 and the feature quantity CH 2. Then, the position of the imaging region is corrected by the 2 nd exposure device MPA2 using the calculated relative distance RD1 to perform exposure.
Fig. 7 is a flowchart showing exposure control processing using the MMG production method in the embodiment. In S200, the substrate PL is carried into the 1 st exposure apparatus MPA1 by the carrying mechanism TRTR and mounted on the substrate stage PS1. In S201, a mark MAM is formed at a predetermined position with respect to the edge SE of the substrate PL by the mark forming apparatus MF of the 1 st exposure apparatus MPA 1. As described above, the mark MAM formed here may have an incomplete shape. In S202, the mark MAM is imaged by the mark detection unit AS1 of the 1 st exposure apparatus MPA1 to obtain image data IM1 of the mark image.
In S203, the image data IM1 is transferred from the 1 st exposure apparatus MPA1 to the 2 nd exposure apparatus MPA2 by the management apparatus GS (main control unit MCNT). For example, the image data IM1 transferred to the 2 nd exposure device MPA2 can be stored in a memory, not shown, of the control unit CNT 2. Alternatively, at this point in time, the management device GS may store the image data IM1 in the storage unit M in the management device GS without transferring the image data IM1 to the 2 nd exposure device MPA2, and the control unit CNT2 of the 2 nd exposure device MPA2 may read the image data IM1 from the storage unit M later.
In S204, the 1 st shot region EX1 of the substrate PL is exposed with the 1 st exposure apparatus MPA1 with respect to the edge SE of the substrate PL. After the exposure of the 1 st imaging area EX1 is completed, in S205, the substrate PL is carried out of the 1 st exposure apparatus MPA1 by the carrying mechanism TR, carried into the 2 nd exposure apparatus MPA2, and mounted on the substrate stage PS2. In S206, the mark MAM is imaged by the mark detection unit AS2 of the 2 nd exposure device MPA2 to obtain image data IM2 of the mark image.
In S207, the image processing unit IP2 of the 2 nd exposure device MPA2 calculates the feature value CH1 of the mark MAM included in the image data IM1 transferred from the 1 st exposure device MPA1 in S203. The image processing unit IP2 calculates the feature value CH2 of the mark MAM included in the image data IM 2. The feature quantity can be at least one of brightness, contrast, and spectrum information, for example. Further, the image processing unit IP2 calculates a relative distance RD1 between the mark MAM of the image data IM1 and the mark MAM of the image data IM2 in accordance with an image processing method (for example, a phase-limited correlation method) using the feature quantity CH1 and the feature quantity CH2. In S208, the position of the imaging region is corrected by the 2 nd exposure device MPA2 and exposure is performed. Specifically, the 2 nd exposure device MPA2 determines a correction parameter for correcting an arrangement error of the 2 nd imaging region EX2 with respect to the 1 st imaging region EX1 based on the calculated relative distance RD1. Then, the 2 nd exposure device MPA2 exposes the 2 nd imaging region EX2 in response to the determined correction parameters. Specifically, the 2 nd exposure apparatus MPA2 performs correction driving of a predetermined unit (for example, an optical element of the projection optical system P2) in the apparatus based on the determined correction parameter, and performs exposure of the 2 nd imaging region EX 2.
According to the exposure control process of the present embodiment described above, the 1 st exposure apparatus MPA1 performs exposure of the 1 st imaging region EX1 with respect to the edge SE of the substrate PL. On the other hand, the 2 nd exposure device MPA2 acquires information of the mark detected by the mark detection unit AS1 of the 1 st exposure device MPA1 and information of the mark detected by the mark detection unit AS 2. The information of the mark detected by the mark detection unit AS1 of the 1 st exposure apparatus MPA1 is the image data IM1 acquired by the 1 st exposure apparatus MPA1 in the above example. The information of the mark detected by the mark detecting unit AS2 is the image data IM2 acquired by the 2 nd exposure device MPA2 in the above example. The 2 nd exposure device MPA2 determines a correction parameter for correcting the alignment error of the 2 nd imaging region EX2 based on the relative distance RD1 between the mark MAM of the image data IM1 and the mark MAM of the image data IM2. Then, the 2 nd exposure device MPA2 performs exposure of the 2 nd imaging region EX2 by reflecting the correction parameter. Thus, even if the formation accuracy of the mark MAM is unstable, the size TPA of the bonding area can be obtained by adding RD1 to TP1 and TP2, and alignment can be performed with high accuracy and stability.
In the above embodiment, the image data IM1 (for example, bitmap image data) of the marker image is transferred from the 1 st exposure apparatus MPA1 to the 2 nd exposure apparatus MPA2 via the management apparatus GS (main control unit MCNT). As a modification thereof, the image processing unit IP1 of the 1 st exposure apparatus MPA1 may calculate the characteristic amount CH1 of the mark from the image data RIM1, and transfer the data of the characteristic amount CH1 from the 1 st exposure apparatus MPA1 to the 2 nd exposure apparatus MPA2. For example, consider a case where a phase-limited correlation method is employed in the calculation of the relative distance RD1 between the marks by the image processing section IP2 of the 2 nd exposure device MPA2. In this case, the image processing unit IP1 of the 1 st exposure apparatus MPA1 performs discrete fourier transform on the image data RIM1 to obtain an amplitude spectrum and a phase spectrum in the frequency region of the image. Here, the amplitude spectrum corresponds to information of the depth of the image, and the phase spectrum corresponds to information of the contour of the image. The 1 st exposure apparatus MPA1 transmits spectrum information about the amplitude spectrum and the phase spectrum as data of the feature quantity CH1 to the 2 nd exposure apparatus MPA2.
In this modification, the feature quantity CH1 is calculated on the 1 st exposure apparatus MPA1 side, so that it is advantageous to reduce the calculation load on the 2 nd exposure apparatus MPA2 side.
< Embodiment of article manufacturing method >
The method for manufacturing an article according to the embodiment of the present invention is suitable for manufacturing an article such as a micro device such as a semiconductor device or an element having a microstructure. The method for manufacturing an article according to the present embodiment includes: a step of forming a latent image pattern on a photosensitive agent applied to a substrate (a step of exposing the substrate) using the exposure apparatus; and developing the substrate on which the latent image pattern is formed in the above step. The above-described production method may further include other known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like). The method for manufacturing an article according to the present embodiment is more advantageous than the conventional method in at least 1 of performance, quality, productivity, and production cost of the article.
The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the claims are appended to disclose the scope of the invention.
Claims (7)
1. An exposure system, comprising:
A1 st exposure device for exposing the 1 st imaging area of the substrate;
A 2 nd exposure device that exposes a 2 nd imaging region of the substrate different from the 1 st imaging region; and
A mark forming device for forming alignment marks at positions of the substrate different from the 1 st photographing region and the 2 nd photographing region,
The exposure system is characterized in that,
The 1 st exposure device includes:
A1 st mark detecting unit configured to detect the alignment mark formed on the substrate by the mark forming device;
a transmission unit configured to transmit the information of the alignment mark detected by the 1 st mark detection unit to the 2 nd exposure device; and
An abutting portion that abuts against one side of the substrate for positioning the substrate,
The 1 st exposure device is configured to expose the 1 st imaging area with the one side of the substrate as a reference in a state where the one side is abutted against the abutting portion,
The 2 nd exposure device includes a 2 nd mark detection portion that detects the alignment mark formed on the substrate by the mark formation device,
The 2 nd exposure device determines a correction parameter for correcting an arrangement error of the 2 nd imaging region with respect to the 1 st imaging region based on the information of the alignment mark detected by the 1 st mark detecting unit in the 1 st exposure device and the information of the alignment mark detected by the 2 nd mark detecting unit, which are transmitted to the 2 nd exposure device by the transmission unit, and exposes the 2 nd imaging region by reflecting the correction parameter.
2. The exposure system according to claim 1, wherein,
The 1 st mark detecting section and the 2 nd mark detecting section provide image data of an image of the alignment mark as information of the alignment mark.
3. The exposure system according to claim 2, wherein,
The 2 nd exposure device calculates a relative distance between the alignment mark in the image obtained by the 1 st mark detection unit and the alignment mark in the image obtained by the 2 nd mark detection unit based on the image data from the 1 st mark detection unit and the 2 nd mark detection unit, and determines the correction parameter based on the relative distance.
4. The exposure system according to claim 3, wherein,
The 2 nd exposure device calculates a1 st feature amount as a feature amount of the alignment mark from the image data from the 1 st mark detection portion, calculates a 2 nd feature amount as a feature amount of the alignment mark from the image data from the 2 nd mark detection portion, and calculates the relative distance from the 1 st feature amount and the 2 nd feature amount.
5. The exposure system according to claim 4, wherein,
The feature quantity includes at least any one of brightness, contrast, and spectrum information.
6. The exposure system according to claim 1, wherein,
And a transport mechanism for transporting the substrate from the 1 st exposure device to the 2 nd exposure device.
7. A method of manufacturing an article, comprising:
A process of exposing a substrate using the exposure system according to any one of claims 1 to 6; and
A step of developing the substrate after exposure in the step,
And manufacturing an article according to the developed substrate.
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| JP2019026672A JP7265827B2 (en) | 2019-02-18 | 2019-02-18 | Exposure system and article manufacturing method |
| JP2019-026672 | 2019-02-18 |
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| JP2005175190A (en) * | 2003-12-11 | 2005-06-30 | Canon Inc | Determination method of gradation resolution, alignment method, exposure apparatus, and manufacturing method of device |
| JP2007199711A (en) * | 2005-12-28 | 2007-08-09 | Nikon Corp | Exposure system and method, and device manufacturing system and method |
| CN107966881A (en) * | 2017-03-15 | 2018-04-27 | 上海微电子装备（集团）股份有限公司 | Lithographic equipment and method |
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| WO1999050893A1 (en) * | 1998-03-30 | 1999-10-07 | Nikon Corporation | Exposure method and exposure system |
| JP2001297966A (en) * | 2000-04-13 | 2001-10-26 | Canon Inc | Exposure method, exposure system, projection aligner, manufacturing method of semiconductor device, semiconductor manufacturing factory, and method for maintaining projection aligner |
| JP2005092137A (en) | 2003-09-19 | 2005-04-07 | Nikon Corp | Aligner and exposure method |
| TWI271602B (en) * | 2004-03-31 | 2007-01-21 | Fujifilm Corp | A correcting method and an exposure method of exposure device, and an exposure device |
| WO2007066679A1 (en) * | 2005-12-06 | 2007-06-14 | Nikon Corporation | Exposure apparatus, exposure method, projection optical system and device manufacturing method |
| WO2007102484A1 (en) | 2006-03-07 | 2007-09-13 | Nikon Corporation | Device manufacturing method, device manufacturing system, and measuring/examining instrument |
| JP2010098143A (en) * | 2008-10-16 | 2010-04-30 | Canon Inc | Exposure apparatus and method of manufacturing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005175190A (en) * | 2003-12-11 | 2005-06-30 | Canon Inc | Determination method of gradation resolution, alignment method, exposure apparatus, and manufacturing method of device |
| JP2007199711A (en) * | 2005-12-28 | 2007-08-09 | Nikon Corp | Exposure system and method, and device manufacturing system and method |
| CN107966881A (en) * | 2017-03-15 | 2018-04-27 | 上海微电子装备（集团）股份有限公司 | Lithographic equipment and method |
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| CN111580358A (en) | 2020-08-25 |
| JP7265827B2 (en) | 2023-04-27 |
| JP2020134650A (en) | 2020-08-31 |
| TWI783193B (en) | 2022-11-11 |
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| TW202101123A (en) | 2021-01-01 |
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