CN111558785B - Method for processing three-dimensional contour of transparent material - Google Patents
Method for processing three-dimensional contour of transparent material Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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Abstract
The invention discloses a method for processing a three-dimensional contour of a transparent material, which comprises the steps of processing the whole transparent material according to a preset path through a laser beam, continuously adjusting laser processing energy according to different processing depths, and forming the three-dimensional contour of the transparent material by changing the height of a Z axis and a processing track corresponding to the Z axis; after the transparent material three-dimensional contour is formed, processing the transparent material by using a forming method to separate the transparent material three-dimensional contour from the waste material for final forming; according to the invention, the laser beam acts on the whole thickness direction of the transparent material, the transparent material is modified by using the ultrashort pulse width, and the transparent material is formed and separated by a special processing method, so that a crack-free and damage-free workpiece is obtained, the generation of fine debris is avoided, and the product yield is improved.
Description
Technical Field
The invention relates to the technical field of laser processing, in particular to a method for processing a three-dimensional contour of a transparent material.
Background
With the rapid development of electronic products, especially smart phones, tablet computers, and the like are developing in the direction of thinner volume and lighter weight. The electronic products can not be separated from the glass sheet, at present, the thickness of the glass sheet on the electronic products is reduced to 0.6-0.7mm from the original 1.1mm, and the thickness of the glass sheet of the mobile phone screen is reduced to 0.3mm or even lower. The thinner the thickness of the glass sheet, the more sensitive it is to the forces and the more susceptible it is to brittle failure after impact, which undoubtedly increases the difficulty of processing. Silicon is widely applied to the LED industry as an important substrate material, and although the silicon has the characteristics of good thermal conductivity and high stability, the brittle and hard characteristics of the silicon bring great difficulty to processing.
The existing processing method of glass and silicon is mainly a mechanical method, and the mechanical method is to grind the glass and silicon by using hard alloy and a diamond cutter. However, such mechanical methods have problems, such as chipping and microcrack caused by the removal of glass material and the need for an additional cleaning process, and the biggest problems are poor stability and poor yield of glass products. For example, when a diamond cutter is used for cutting a silicon wafer, on one hand, the cost for replacing the cutter is high, and on the other hand, the quality of the product is inferior to that of laser processing due to machining scraps and machining residual stress.
There are many mechanisms for laser cutting transparent brittle materials, and the main mechanisms can be divided into the following mechanisms: the method comprises a conventional continuous and nanosecond pulse laser melting cutting separation mechanism, a laser invisible cutting (or internal modified cutting) separation mechanism, a laser thermal stress cutting (or thermal cracking cutting and crack control cutting) separation mechanism and an ultrashort pulse (picosecond and femtosecond) laser ablation cutting separation mechanism. The transparent brittle materials mainly comprise glass, optical crystal materials, sapphire materials, silicon crystal materials and the like with various properties. For example, chinese laid-open publication No. CN105948476A, which is exclusively used in 2016, 9, 21, discloses a method for chamfering glass with laser, which uses ultrashort pulse laser ablation cutting separation mechanism to remove material by matching laser beam with galvanometer scanning.
In laser stealth dicing (or so-called internal modified dicing) separation, separation of a material after laser processing is required, and in most of conventional separation, a local heating and cooling method is used, for example, a laser pulse is used to locally heat a contour line portion, and then a cooling fluid is sprayed to a heating portion to cool the contour line portion, thereby separating a workpiece from a scrap. The separation mode is suitable for processing contours with simpler tracks, but for three-dimensional contours with more complex tracks, because the requirement on separation split sheets is higher, the separation effect cannot be achieved by adopting the traditional local separation mode, the three-dimensional contours can not be guaranteed to split during separation, the phenomenon that the processing materials are not separated due to the existence of cracks is easily caused, and the separation needs to be realized by other means. Therefore, how to solve the problem that damages such as edge breakage and microcrack are easily generated in the three-dimensional contour forming process of the transparent material, and the stability and yield of the transparent material product are improved becomes a problem which needs to be solved urgently.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a method for processing a three-dimensional profile of a transparent material, which is used for solving the problems in the process of forming the three-dimensional profile of the transparent material.
The invention is realized by the following technical scheme:
according to an aspect of one or more embodiments of the present specification, there is provided a method for three-dimensional contour machining of a transparent material, including:
focusing a laser beam on a lower surface of a transparent material, the laser beam having an ultrashort pulse width;
adjusting the height of a Z axis, matching with a designed processing track, processing a laser beam from the lower surface to the upper surface of the transparent material layer by layer, adjusting laser processing energy according to different processing depths, and forming a three-dimensional profile on the transparent material;
and carrying out cold-hot forming treatment on the formed three-dimensional profile, and further comprising the following steps:
putting the whole laser processed transparent material into a heating furnace, heating to a preset temperature, and stopping heating after keeping the temperature for a first preset time;
placing the heated transparent material in the air for a second preset time;
putting the transparent material whole after the second preset time into water for cooling for a third preset time;
separating the three-dimensional profile of the transparent material from the waste material after cooling for a third predetermined time.
In the technical scheme, the laser beam is used for processing the whole transparent material according to a preset path, the laser processing energy is continuously adjusted according to different processing depths, and the three-dimensional profile of the transparent material is formed by changing the Z-axis height and the corresponding processing track; after the transparent material three-dimensional contour is formed, molding treatment is carried out by utilizing a cold-hot method, so that the transparent material three-dimensional contour is separated from the waste material to be finally molded; according to the invention, the laser beam acts on the whole thickness direction of the transparent material, the transparent material is modified by using the ultrashort pulse width, and the transparent material is formed and separated by a special processing method, so that a crack-free and damage-free workpiece is obtained, the generation of fine debris is avoided, and the product yield is improved.
According to the technical scheme, the transparent material after laser processing is subjected to overall cold-hot method treatment, the three-dimensional profile of the transparent material is effectively separated from the waste material by limiting the combination sequence of heating and cooling and the specific parameters of heating and cooling, and damages such as edge breakage and microcracks generated in the forming process of the three-dimensional profile of the transparent material are avoided. According to the invention, through the limitation of the combination sequence of heating and cooling and the specific parameters of heating and cooling, cracks outside the three-dimensional contour can be avoided because the whole transparent material is too severely expanded with heat and contracted with cold, or the material can not be separated because the expansion with heat and the contraction with cold are too gentle, so that the transparent material is ensured to be separated along the three-dimensional contour without generating damages such as edge breakage, microcrack and the like.
As a further technical scheme, the processing depth of each layer of the three-dimensional profile is controlled by setting the laser cutting speed, the laser point spacing and the laser single pulse size, the laser processing energy is adjusted according to the processing depth, and meanwhile, the three-dimensional profile with a certain shape is formed by matching with the corresponding processing track of each layer; the three-dimensional contour machining process adopts single-point laser and Z-axis matched machining or sectional machining.
Further, the laser beam carries out laser modification on the transparent material layer by layer from the lower surface to the upper surface, and the modification track of each layer can be determined according to the Z-axis height and the three-dimensional contour size of each layer, so that a specific three-dimensional contour shape is formed.
Further, the transparent material comprises glass, sapphire and silicon wafers.
Further, the invention adopts an XY linear motor with PSO function as a drive to drive the transparent material to move, and can effectively ensure the absolute uniformity between points acted by the linear and arc laser when processing the three-dimensional contour graph by utilizing the PSO technology, thereby ensuring the consistency of the processing effect of the linear and arc.
Furthermore, a segmented processing mode is adopted for processing, and a single processing track in the processing tracks is divided into multiple segments for processing, so that the processing efficiency can be greatly improved. If a single processing track needs to finish processing through more than ten points, the single processing track can be divided into 2 sections or 3 sections for processing by adopting a segmented processing mode, and the processing efficiency is improved. By adopting the segmented processing, the processing time of the straight line part can be shortened from 10-20 times to 2-3 times, and the integral processing efficiency of the three-dimensional contour is improved.
As a further technical scheme, the first preset time is 1min-2 min; the second preset time is 3s-5 s; the third preset time is 5s-10 s; the predetermined temperature is 160 ℃ to 200 ℃. The transparent material is put into a heating furnace to be heated, and the heating temperature and the heating time are limited on the premise of not damaging the internal structure of the material, so that the laser processing area is expanded to a certain extent. Through the mutual matching of the heating temperature, the heating time, the placing time in the air and the cooling time, the material can be separated along the three-dimensional contour without generating damages such as edge breakage, microcrack and the like.
As a preferred technical scheme, the cold and hot method comprises the steps of putting a transparent material processed by laser into a heating furnace, heating to a preset temperature of 160 ℃, keeping the temperature for 1-2 min, stopping heating, putting the transparent material into the air for 3-5 s, and putting the transparent material into H2O Cooling 5s-10s (H)2O is placed at normal temperature), and finally the transparent material is put from H2And (4) taking out the transparent material, and separating the three-dimensional outline of the transparent material from the waste material (or separating the transparent material by mechanical external force).
Further, the heating temperature of the laser processed transparent material in the heating furnace is preferably 160 ℃ from 160 ℃ to 200 ℃, and the separation effect thereof is gradually deteriorated; when the temperature is over 200 ℃, the thermal expansion and cold contraction process of the transparent material is too violent, more cracks are generated, the separation along the three-dimensional contour cannot be ensured, and the separation effect is unacceptable; below 160 c, the expansion and contraction process experienced by the transparent material is too gradual, resulting in the inability of the material to separate.
As a further technical scheme, the forming treatment of the formed three-dimensional contour by adopting a 'pickling method' comprises the following steps:
putting the whole transparent material subjected to laser processing into acid for corrosion, and setting acid soaking time according to the corrosion depth of the transparent material;
after forming an obvious groove between the three-dimensional profile of the transparent material and the waste material, taking out the transparent material;
putting the transparent material into a cleaning machine for ultrasonic cleaning;
and after the ultrasonic cleaning is finished, separating the three-dimensional outline of the transparent material from the waste material.
In the above technical scheme, the whole corrosion of the transparent material is performed by using acid with a specific concentration ratio, wherein the acid with a specific concentration ratio comprises 25% by mass of HF or HF: HNO3:H2O = 1: 1: 100 or HF: HNO3:H2O=1:3:4。
As a further technical scheme, the wavelength range of the laser beam is 400nm-2500 nm; the pulse width range of the laser beam is 100fs-10 ps; the single point energy range of the laser beam is 5uj-10 uj.
Specifically, the wavelength of 1550nm to 2500nm is a processing band for silicon wafers, and the wavelength of 532nm to 1064nm is a processing band for glass and sapphire.
As a further technical scheme, the thickness of the transparent material ranges from 0.2mm to 1.1 mm. The laser processing energy corresponding to different processing depths on the transparent material is continuously adjustable.
As a further technical scheme, the corresponding relation between different thicknesses of the transparent material and the laser processing energy is established, and the laser processing energy is continuously adjusted according to the corresponding relation and aiming at different processing depths, so that the integral energy concentration of laser focusing in the thickness range of the transparent material tends to be consistent. Because the problem of objective lens phase difference exists when the processing depths are different, and the effective utilization of laser processing energy is influenced, the corresponding relation between different material thicknesses and laser processing energy is established, continuous energy adjustment is carried out according to different processing depths based on the corresponding relation, and the consistency of the processing effect in the thickness direction of the whole transparent material is ensured.
As a further technical scheme, the diameter range of a focusing light spot of the laser beam is 1um-5um, according to the size of the focusing light spot, the offset distances delta X and delta Y of the XY axes are 1.5 times-2.5 times of the corresponding focusing light spot, and the moving distance delta Z of the Z axis is 2 times-8 times of the corresponding focusing light spot. The smaller the focused light spot is, the higher the energy density is, the smaller the thermal influence on the processing of the transparent material is, and the higher the strength of the processed product is.
In particular, machining of different three-dimensional profile shapes can be achieved by setting different offset distances.
Further, a focusing objective lens F is selected to be 4mm-50 mm. The focusing objective has small focusing light spot, can realize the modification of the transparent material, has small damage to the processing material and has high strength of the processed finished product.
According to another aspect of one or more embodiments of the present disclosure, a system for processing a three-dimensional contour of a transparent material is provided, where the system is implemented by the method, and the system includes a laser, a beam expanding collimator, a microscope objective, a Z-axis lifting stage, an XY linear motor, and a control system, where an output end of the laser is connected to an input end of the beam expanding collimator, an output end of the beam expanding collimator is connected to an input end of the microscope objective, an output end of the microscope objective is aligned to a transparent material workpiece, and the transparent material workpiece is placed above the XY linear motor and moves synchronously with the XY linear motor; the microscope objective is connected with the Z-axis lifting table; and the control system is respectively connected with the laser, the XY linear motor and the Z-axis lifting platform.
In the technical scheme, the transparent material is subjected to laser modification layer by layer from the lower surface to the upper surface by using the laser with the ultrashort pulse width, and the modification track of each layer can be determined according to the Z-axis height and the three-dimensional contour size of the transparent material, so that a specific three-dimensional contour shape is formed.
The transparent material comprises glass, sapphire and silicon wafers.
The motor precision of XY linear motor and Z axle elevating platform all is within 5um to XY linear motor is from taking the PSO function, ensures the effect uniformity of laser beam machining straight line and circular arc.
The wavelength range of the laser beam is 400nm-2500 nm; the pulse width range of the laser beam is 100fs-10 ps; the single point energy range of the laser beam is 5uj-10 uj.
The thickness range of the transparent material is 0.2mm-1.1 mm. The laser processing energy corresponding to different processing depths on the transparent material is adjustable.
The laser beam is focused at any position in the thickness direction of the transparent material, a focusing objective lens F is selected to be 4mm-50mm, the diameter range of a focusing light spot of the laser beam is 1um-5um, according to the size of the focusing light spot, the offset distances delta X and delta Y of the XY axes are 1.5 times-2.5 times of the corresponding focusing light spot, and the moving distance delta Z of the Z axis is 2 times-8 times of the corresponding focusing light spot. The smaller the focused light spot is, the higher the energy density is, the smaller the thermal influence on the processing of the transparent material is, and the higher the strength of the processed product is.
Compared with the prior art, the invention has the beneficial effects that: (1) the invention processes the whole transparent material according to a preset path by using a laser beam with ultra-short pulse width, continuously adjusts the laser processing energy for different processing depths, and forms a three-dimensional profile of the transparent material with a certain shape by changing the Z-axis height and the corresponding processing track; after the three-dimensional outline of the transparent material is formed, molding treatment is carried out by utilizing a cold-hot method or a foaming acid method, so that the three-dimensional outline of the transparent material is separated from the waste material to be finally molded; according to the invention, the laser beam acts on the whole thickness direction of the transparent material, the transparent material is modified by using the ultrashort pulse width, and the transparent material is formed and separated by a special processing method, so that a crack-free and damage-free workpiece is obtained, the generation of fine debris is avoided, and the product stability and the product yield of the transparent material are improved.
(2) According to the invention, the transparent material after laser processing is integrally molded and separated by adopting a cold-hot method, and through the limitation of the combination sequence of heating and cooling and the specific parameters of heating and cooling, the phenomenon that the transparent material integrally generates cracks outside a three-dimensional profile due to too severe expansion and contraction or cannot be separated due to too moderate expansion and contraction is avoided, the transparent material is ensured to be separated along the three-dimensional profile without generating damages such as edge breakage, microcrack and the like, and the product yield is improved.
(3) According to the invention, through establishing the corresponding relation between different thicknesses of the transparent material and the laser processing energy, the laser processing energy is continuously adjusted according to the corresponding relation and aiming at different processing depths, so that the integral energy concentration of laser focusing in the thickness range of the transparent material tends to be consistent; aiming at different processing depths, continuous energy adjustment can be carried out in a targeted manner, and the consistency of the processing effect of the whole transparent material in the thickness direction is ensured.
Drawings
Fig. 1 is a graph showing the correspondence between the thickness of a transparent material and the laser processing energy according to an embodiment of the present invention.
Fig. 2 is a system block diagram of a method for processing a three-dimensional profile of a transparent material according to an embodiment of the present invention.
FIG. 3 is a schematic diagram of a processing trajectory for processing a three-dimensional profile of a silicon wafer according to an embodiment of the present invention.
FIG. 4 is a schematic diagram of a "cold-hot" separation of a silicon wafer according to an embodiment of the present invention.
FIG. 5 is a schematic diagram showing the separation effect of the silicon wafer by the "cold-hot method" in example 1 of the present invention.
FIG. 6 is a schematic diagram showing the separation effect of the "cold-hot process" on the silicon wafer according to comparative example 1 of the present invention.
FIG. 7 is a schematic diagram showing the separation effect of the "cold-hot process" on the silicon wafer according to comparative example 2 of the present invention.
FIG. 8 is a schematic diagram showing the separation effect of the "cold-hot process" on the silicon wafer according to comparative example 3 of the present invention.
FIG. 9 is a schematic drawing of a processing trajectory for three-dimensional contour processing of glass according to an embodiment of the present invention.
FIG. 10 is a schematic illustration of a glass "bubble acid" separation according to an embodiment of the present invention.
Detailed Description
The technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings, and it is to be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without any inventive step, are within the scope of the present invention. The implementations described in the following exemplary embodiments do not represent all implementations consistent with one or more embodiments of the present specification. Rather, they are merely examples of apparatus and methods consistent with certain aspects of one or more embodiments of the specification, as detailed in the claims which follow.
It should be noted that: in other embodiments, the steps of the corresponding methods are not necessarily performed in the order shown and described herein. In some other embodiments, the method may include more or fewer steps than those described herein. Moreover, a single step described in this specification may be broken down into multiple steps for description in other embodiments; multiple steps described in this specification may be combined into a single step in other embodiments.
The invention provides a method for processing a three-dimensional contour of a transparent material, which comprises the following steps: focusing a laser beam on a lower surface of a transparent material, the laser beam having an ultrashort pulse width; adjusting the height of a Z axis, matching with a designed processing track, processing a laser beam from the lower surface to the upper surface of the transparent material layer by layer, adjusting laser processing energy according to different processing depths, and forming a three-dimensional profile on the transparent material; and carrying out molding treatment on the formed three-dimensional contour. According to the invention, the laser beam acts on the whole thickness direction of the transparent material, the transparent material is modified by using the ultrashort pulse width, and the transparent material is formed and separated by a special processing method, so that a crack-free and damage-free workpiece is obtained, the generation of fine debris is avoided, and the product yield is improved.
According to the invention, the corresponding relation between different thicknesses of the transparent material and the laser processing energy is established, and based on the corresponding relation, continuous laser processing energy adjustment can be carried out according to different processing depths, so that the integral energy concentration of laser focusing in the thickness range of the transparent material tends to be consistent, and the consistency of the processing effect in the thickness direction of the whole transparent material is ensured.
The thickness range of the transparent material used in the invention is 0.2mm-1.1 mm. In order to ensure the consistency of the processing effect in the thickness direction of the whole transparent material, the whole energy concentration ratio in the whole thickness range of 1.1mm needs to be consistent. According to the invention, based on different thicknesses and corresponding normalized energy concentrations, a corresponding relation between the thicknesses of different materials within the range of 0-1.1 mm and the energy concentrations of laser processing energy is established. Referring to fig. 1, fig. 1 shows a corresponding relationship between the thickness of a transparent material and the normalized energy concentration of laser processing energy under different lens numerical apertures, wherein the abscissa of the curve is the glass thickness Tc, the ordinate is the normalized energy concentration J, the curve represents a theoretical normalized value of the energy concentration required for processing at different processing depth positions inside the glass, and the thicker the thickness is when the thickness reaches the inside of the material along the direction of the optical axis, the deeper the processing depth is, the lower the energy concentration of laser focusing is, and the higher the energy is required for processing. Meanwhile, under the Numerical Apertures (NA) of different lenses, the energy concentration ratios of the laser in the materials with the same thickness are different, and the larger the NA is, the lower the energy concentration ratio is; under the same NA, the energy concentration ratio is different in different material thicknesses, and the smaller the NA, the higher the energy concentration ratio, and the lower the energy required for actual processing. In fig. 1, the overall energy concentration of the laser processing energy over the entire 1.1mm thickness range tends to be consistent for different numerical apertures:
NA =0.3, J(glass)0-J(glass)1.1=0.052,
NA =0.4, J(glass)0-J(glass)1.1=0.467,
NA =0.5, J(glass)0-J(glass)1.1=0.835,
NA =0.6, J(glass)0-J(glass)1.1=0.932。
In actual processing, the higher the energy concentration, the more the whole energy concentration in the whole thickness range of 1.1mm can be ensured to be consistent. The skilled person can refer to the corresponding relation in fig. 1, select the numerical aperture of the objective lens, and perform adaptive continuous adjustment on the laser processing energy of different processing depths based on the corresponding relation.
In fig. 1, the normalized energy concentration J is calculated as follows:
wherein,Andis the polar coordinates of the optical system reference spherical point,is the image space focal length, s, of the optical system0The value of the longitudinal decoking value is,at the maximum value of the field angle, n is the refractive index of the material, Tc is the central thickness of the material, H is the half diameter of the material just incident on the material, S1 is the third-order spherical aberration coefficient, S2 is the third-order coma coefficient, S3 is the meridian field curvature, S4 is the sagittal field curvature, K is the wave vector, W is the wave aberration, NA is the numerical aperture of the optical system, F is the F number of the optical system, A is the numerical aperture of the optical system, F is the F number of the optical system, and00is a constant.
Example 1
Referring to fig. 2, fig. 3 and fig. 4, the present embodiment provides a method for processing a three-dimensional outline of a silicon wafer, where the transparent material workpiece 6 is a silicon wafer, and the method includes the following steps: a laser 1 with the pulse width ranging from picoseconds to femtoseconds and the laser wavelength of 1550nm is adopted; a focused laser beam 5 generated by a laser 1 is subjected to layer-by-layer laser modification from the lower surface to the upper surface of a silicon wafer, the modification focus position is realized by driving a microscope objective 3 by a high-precision Z-axis lifting table 4, and the motion tracks corresponding to different focus positions are calculated and generated by a control system 8 and are realized by controlling an XY linear motor 7; the processing depth from S1 to Sn on the silicon wafer three-dimensional contour 9 is controlled by setting the laser cutting speed, the PSO laser point spacing and the laser single pulse size, and a three-dimensional contour with a certain shape is formed by matching with a corresponding track of each layer. Finally, the silicon wafer with the three-dimensional outline is subjected to cold-hot method to generate a cold-hot separation area 12, and the finished product 10 is thoroughly separated from the waste 11 under the action of mechanical external force.
Specifically, in the present embodiment, as shown in fig. 3 and 4, the thickness of the silicon wafer is 0.5 mm:
a. firstly, focusing a laser beam 5 on the lower surface of a silicon wafer by using a high-precision Z shaft 4;
b. calculating the processing height and the corresponding processing track of each layer of the S1-Sn layer by using the control system 8;
c. the cutting speed is 100mm/S, the PSO point spacing is 1um, the single pulse energy is 5uj-10uj (the single pulse energy can be adjusted according to the actual process effect), the control system 8 completes the laser modification of the S1-Sn layer by controlling the high-precision Z-axis lifting table 4 and the linear motor 7, and finally the three-dimensional outline 9 of the silicon wafer shown in the figure 3 is formed;
d. the three-dimensional outline 9 of the silicon wafer is processed by a cold-hot method, as shown in fig. 4, a cold-hot separation zone 12 is generated, and a finished product 10 is thoroughly separated from waste materials 11 under the action of mechanical external force.
In the embodiment, the cold-hot method comprises the steps of putting the transparent material processed by the laser into a heating furnace, heating to a preset temperature of 160 ℃, keeping the temperature for 1-2 min, stopping heating, putting the transparent material into the air for 3-5 s, and putting the transparent material into H2O Cooling 5s-10s (H)2O is placed at normal temperature), and finally the transparent material is put from H2And (4) taking out the transparent material, separating the three-dimensional profile of the transparent material from the waste material, and obtaining the separation effect shown in figure 5.
Comparative example 1
Comparative example 1 is substantially the same as example 1 except that the heating temperature and heating time in the "cold-hot method" treatment are different: putting the whole laser processed transparent material into a heating furnace, heating to 210 ℃, then keeping the temperature for 30-50 s, stopping heating, putting the transparent material into the air for 3-5 s, and putting the transparent material into H2O Cooling 5s-10s (H)2O is placed at normal temperature), and finally the transparent material is put from H2And O, taking out, and separating the three-dimensional profile of the transparent material from the waste material. As can be seen from fig. 6, there are many cracks near the three-dimensional profile of the transparent material, and it is not guaranteed that the transparent material cracks along the three-dimensional profile during separation, and the stability and yield of the separated product are low.
Comparative example 2
Comparative example 2 is substantially the same as example 1 except that the heating temperature and heating time in the "cold-hot method" treatment are different: putting the whole laser processed transparent material into a heating furnace, heating to 150 ℃, then keeping the temperature for 3-4 min, stopping heating, putting the transparent material in the air for 3-5 s, and then putting the transparent material into the airMaterial placement H2O Cooling 5s-10s (H)2O is placed at normal temperature), and finally the transparent material is put from H2And O, taking out, and separating the three-dimensional profile of the transparent material from the waste material by virtue of mechanical external force. As can be seen from fig. 7, the burr phenomenon exists near the three-dimensional contour of the transparent material, which causes the problem that the processed material cannot be separated even though cracks exist, and the stability and yield of the product are low.
Comparative example 3
Comparative example 3 is essentially the same as example 1, except that: putting the whole transparent material after laser processing into a heating furnace, heating to 160 ℃, then preserving heat for 1-2 min, stopping heating, putting the transparent material into cooling air, cooling for 15-20 s, and separating the three-dimensional profile of the transparent material from the waste material by means of mechanical external force. As can be seen from fig. 8, the transparent material is abnormally cracked and has a serious edge breakage, and the separation effect cannot be ensured.
Example 2
Referring to fig. 2, fig. 9 and fig. 10, the present embodiment provides a method for processing a glass three-dimensional contour, where the transparent material workpiece 6 is made of glass, and the method includes the following steps: a laser 1 with the pulse width ranging from picoseconds to femtoseconds and the laser wavelength of 1030-1080nm is adopted; the focused laser beam 5 generated by the laser 1 is subjected to laser modification layer by layer from the lower surface to the upper surface of the glass, the modification focus position is realized by driving the microscope objective 3 by the high-precision Z-axis lifting table 4, and the motion tracks corresponding to different focus positions are calculated and generated by the control system 8 and are realized by controlling the XY linear motor 7; the processing depth of each layer from G1 to Gn on the laser modification track 13 is controlled by setting the laser cutting speed, the PSO laser point spacing and the laser single pulse size, and a three-dimensional profile with a certain shape is formed by matching the corresponding track of each layer. Finally, the formed three-dimensional contour glass is subjected to a 'soaking acid method' to generate a corrosion groove 16, and the finished product 14 and the waste 15 are thoroughly separated after ultrasonic cleaning by a cleaning machine.
Specifically, in the present embodiment, as shown in fig. 9 and 10, the glass thickness is 0.8 mm:
e. firstly, focusing a laser beam 5 on the lower surface of the glass by using a high-precision Z shaft 4;
f. calculating the processing height and the corresponding processing track of each layer of the G1-Gn layer by using the control system 8;
g. the cutting speed is 200mm/s, the PSO point spacing is 2-3um, the single pulse energy is 5uj-10uj (the single pulse energy can be adjusted according to the actual process effect), the control system 8 finishes the laser modification of the G1-Gn layer by controlling the high-precision Z shaft 4 and the linear motor 7, and finally the glass three-dimensional profile 13 shown in the figure 9 is formed;
h. the glass three-dimensional profile 13 is treated by the "bubble acid method" as shown in fig. 10, resulting in etched grooves 16, and the finished product 14 is thoroughly separated from the waste material 15 after ultrasonic cleaning by a cleaning machine.
The invention processes the whole transparent material according to a preset path by using a laser beam with ultra-short pulse width, continuously adjusts the laser processing energy for different processing depths, and forms a three-dimensional profile of the transparent material with a certain shape by changing the Z-axis height and the corresponding processing track; after the transparent material three-dimensional contour is formed, the transparent material three-dimensional contour is formed by using a cold-hot method or a foaming acid method, so that the transparent material three-dimensional contour is separated from the waste material to be finally formed, a workpiece without cracks and damages is obtained, the generation of fine fragments is avoided, and the product stability and the product yield of the transparent material are improved.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions deviate from the technical solutions of the embodiments of the present invention.
Claims (7)
1. A method for three-dimensional contouring of a transparent material, comprising:
focusing a laser beam on a lower surface of a transparent material, the laser beam having an ultrashort pulse width;
adjusting the height of a Z axis, matching with a designed processing track, processing a laser beam from the lower surface to the upper surface of the transparent material layer by layer, adjusting laser processing energy according to different processing depths, and forming a three-dimensional profile on the transparent material;
and carrying out cold-hot forming treatment on the formed three-dimensional profile, and further comprising the following steps:
putting the whole laser processed transparent material into a heating furnace, heating to a preset temperature, and stopping heating after keeping the temperature for a first preset time;
placing the heated transparent material in the air for a second preset time;
putting the transparent material whole after the second preset time into water for cooling for a third preset time;
separating the three-dimensional profile of the transparent material from the waste material after cooling for a third predetermined time;
the first preset time is 1min-2 min; the second preset time is 3s-5 s; the third preset time is 5s-10 s; the predetermined temperature is 160-200 ℃; through the mutual matching of the heating temperature, the heating time, the placing time in the air and the cooling time, the material is separated along the three-dimensional contour without edge breakage and microcrack damage.
2. The method for processing the three-dimensional profile of the transparent material as claimed in claim 1, wherein the processing depth of each layer of the three-dimensional profile is controlled by setting the laser cutting speed, the laser point spacing and the laser single pulse size, the laser processing energy is adjusted according to the processing depth, and simultaneously the three-dimensional profile with a certain shape is formed by matching with the corresponding processing track of each layer; the three-dimensional contour machining process adopts single-point laser and Z-axis matched machining or sectional machining.
3. The method for three-dimensional contour machining of transparent material according to claim 1, wherein the wavelength of the laser beam is in the range of 400nm to 2500 nm; the pulse width range of the laser beam is 100fs-10 ps; the single point energy range of the laser beam is 5uj-10 uj.
4. A method for three-dimensional contouring of a transparent material in accordance with claim 1, wherein said transparent material has a thickness in the range of 0.2mm to 1.1 mm.
5. The method for processing the three-dimensional profile of the transparent material as claimed in claim 4, wherein the corresponding relationship between different thicknesses of the transparent material and the laser processing energy is established, and the laser processing energy is continuously adjusted according to the corresponding relationship for different processing depths, so that the overall energy concentration of laser focusing in the thickness range of the transparent material tends to be consistent.
6. The method of claim 1, wherein the diameter of the focused spot of the laser beam is in the range of 1um to 5um, the XY-axis offset distances Δ X and Δ Y are 1.5 times to 2.5 times of the corresponding focused spot, and the Z-axis movement distance Δ Z is 2 times to 8 times of the corresponding focused spot, according to the size of the focused spot.
7. A system for processing the three-dimensional contour of a transparent material is realized by adopting the method of any one of claims 1 to 6, and is characterized by comprising a laser, a beam expanding collimator, a microscope objective, a Z-axis lifting table, an XY linear motor and a control system, wherein the output end of the laser is connected with the input end of the beam expanding collimator, the output end of the beam expanding collimator is connected with the input end of the microscope objective, the output end of the microscope objective is aligned with a transparent material workpiece, and the transparent material workpiece is arranged above the XY linear motor and moves synchronously with the XY linear motor; the microscope objective is connected with the Z-axis lifting table; and the control system is respectively connected with the laser, the XY linear motor and the Z-axis lifting platform.
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