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CN111537564B - Metal micro-crack depth detection system and method based on transmission laser thermal imaging - Google Patents

Metal micro-crack depth detection system and method based on transmission laser thermal imaging Download PDF

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CN111537564B
CN111537564B CN202010549632.9A CN202010549632A CN111537564B CN 111537564 B CN111537564 B CN 111537564B CN 202010549632 A CN202010549632 A CN 202010549632A CN 111537564 B CN111537564 B CN 111537564B
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张志杰
刘佳琪
尹武良
董宁琛
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North University of China
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    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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    • G01N25/72Investigating presence of flaws
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
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Abstract

The invention relates to a metal surface microcrack depth detection technology, in particular to a transmission type laser thermal imaging-based metal microcrack depth detection system and method. The invention solves the problems of low detection precision, low detection speed and poor detection result intuition of the traditional metal surface microcrack depth detection technology. The metal microcrack depth detection system based on transmission type laser thermal imaging comprises a metal workpiece to be detected, a focusing lens, a semiconductor laser, an amplifier, a digital potentiometer, a single chip microcomputer, an upper computer and a thermal infrared imager; the exit end of the semiconductor laser is opposite to the incident end of the focusing lens; the exit end of the focusing lens is opposite to the front surface of the metal workpiece to be detected; the signal output end of the amplifier is connected with the signal input end of the semiconductor laser; and the signal output end of the digital potentiometer is connected with the signal input end of the amplifier. The method is suitable for detecting the depth of the microcracks on the metal surface.

Description

基于透射式激光热成像的金属微裂纹深度检测系统及方法Metal micro-crack depth detection system and method based on transmission laser thermal imaging

技术领域technical field

本发明涉及金属表面微裂纹深度检测技术,具体是一种基于透射式激光热成像的金属微裂纹深度检测系统及方法。The invention relates to a metal surface micro-crack depth detection technology, in particular to a metal micro-crack depth detection system and method based on transmission laser thermal imaging.

背景技术Background technique

金属因其具有强度高、耐热性好、抗腐蚀能力强等优势,而被广泛应用于航空发动机、汽车、船舶等的制造中。金属工件在使用过程中,容易因疲劳老化或恶劣环境而出现表面微裂纹,由此影响金属工件的力学性能、振动噪声、使用寿命。因此,为了保证金属工件的力学性能、振动噪声、使用寿命,需要对金属工件进行表面微裂纹深度检测。然而,传统的金属表面微裂纹深度检测技术由于自身原理所限,普遍存在检测精度低、检测速度慢、检测结果直观性差的问题。基于此,有必要发明一种基于透射式激光热成像的金属微裂纹深度检测系统及方法,以解决传统的金属表面微裂纹深度检测技术检测精度低、检测速度慢、检测结果直观性差的问题。Metals are widely used in the manufacture of aero-engines, automobiles, and ships because of their advantages such as high strength, good heat resistance, and strong corrosion resistance. During the use of metal workpieces, surface micro-cracks are prone to appear due to fatigue aging or harsh environments, which will affect the mechanical properties, vibration and noise, and service life of metal workpieces. Therefore, in order to ensure the mechanical properties, vibration and noise, and service life of metal workpieces, it is necessary to detect the depth of micro-cracks on the surface of metal workpieces. However, due to the limitation of its own principle, the traditional metal surface micro-crack depth detection technology generally has the problems of low detection accuracy, slow detection speed, and poor intuition of detection results. Based on this, it is necessary to invent a metal micro-crack depth detection system and method based on transmission laser thermal imaging to solve the problems of low detection accuracy, slow detection speed, and poor visibility of detection results in traditional metal surface micro-crack depth detection technology.

发明内容Contents of the invention

本发明为了解决传统的金属表面微裂纹深度检测技术检测精度低、检测速度慢、检测结果直观性差的问题,提供了一种基于透射式激光热成像的金属微裂纹深度检测系统及方法。In order to solve the problems of low detection accuracy, slow detection speed, and poor intuitiveness of detection results of the traditional metal surface micro-crack depth detection technology, the present invention provides a metal micro-crack depth detection system and method based on transmission laser thermal imaging.

本发明是采用如下技术方案实现的:The present invention is realized by adopting the following technical solutions:

基于透射式激光热成像的金属微裂纹深度检测系统,包括被测金属工件、聚焦透镜、半导体激光器、放大器、数字电位器、单片机、上位机、红外热像仪;Metal microcrack depth detection system based on transmission laser thermal imaging, including metal workpiece to be tested, focusing lens, semiconductor laser, amplifier, digital potentiometer, single-chip microcomputer, host computer, infrared thermal imager;

其中,半导体激光器的出射端正对聚焦透镜的入射端;聚焦透镜的出射端正对被测金属工件的正面;放大器的信号输出端与半导体激光器的信号输入端连接;数字电位器的信号输出端与放大器的信号输入端连接;单片机的信号输出端与数字电位器的信号输入端连接;上位机的信号输出端与单片机的信号输入端连接;红外热像仪的探测端正对被测金属工件的背面。Among them, the outgoing end of the semiconductor laser is facing the incident end of the focusing lens; the outgoing end of the focusing lens is facing the front of the metal workpiece to be tested; the signal output end of the amplifier is connected to the signal input end of the semiconductor laser; the signal output end of the digital potentiometer is connected to the amplifier The signal input terminal of the single-chip microcomputer is connected to the signal input terminal of the digital potentiometer; the signal output terminal of the host computer is connected to the signal input terminal of the single-chip microcomputer; the detection terminal of the infrared thermal imager is facing the back of the metal workpiece to be tested.

还包括稳压电源、供电电源;稳压电源的输出端与数字电位器的电压端连接;供电电源的输出端分别与单片机的供电端、数字电位器的供电端、放大器的供电端连接。It also includes a stabilized power supply and a power supply; the output end of the stabilized power supply is connected to the voltage end of the digital potentiometer; the output end of the power supply is respectively connected to the power supply end of the single chip microcomputer, the power supply end of the digital potentiometer, and the power supply end of the amplifier.

所述数字电位器为X9C103数字电位器;X9C103数字电位器的第五引脚与放大器的信号输入端连接;单片机的信号输出端分别与X9C103数字电位器的第一引脚、第二引脚、第七引脚连接;稳压电源的输出端分别与X9C103数字电位器的第三引脚、第六引脚连接;供电电源的输出端分别与X9C103数字电位器的第四引脚、第八引脚连接。The digital potentiometer is an X9C103 digital potentiometer; the fifth pin of the X9C103 digital potentiometer is connected to the signal input end of the amplifier; the signal output end of the single-chip microcomputer is respectively connected to the first pin, the second pin, The seventh pin is connected; the output end of the regulated power supply is respectively connected to the third pin and the sixth pin of the X9C103 digital potentiometer; the output end of the power supply is respectively connected to the fourth pin and the eighth pin of the X9C103 digital potentiometer pin connection.

基于透射式激光热成像的金属微裂纹深度检测方法(该方法是基于本发明所述的基于透射式激光热成像的金属微裂纹深度检测系统实现的),该方法是采用如下步骤实现的:Metal microcrack depth detection method based on transmission laser thermal imaging (this method is realized based on the metal microcrack depth detection system based on transmission laser thermal imaging of the present invention), the method is realized by the following steps:

步骤一:针对被测金属工件正面出现的某一微裂纹,在被测金属工件的正面选定激光加热点,在被测金属工件的背面选定两个温度采集点;激光加热点和两个温度采集点满足如下条件:Step 1: For a microcrack that appears on the front of the metal workpiece to be tested, select a laser heating point on the front of the metal workpiece to be tested, and select two temperature collection points on the back of the metal workpiece to be tested; the laser heating point and the two The temperature collection point meets the following conditions:

激光加热点位于微裂纹的正下方2mm处,第一个温度采集点既位于激光加热点背面对应处的正上方又位于微裂纹背面对应处的正上方,第二个温度采集点位于激光加热点背面对应处的正下方,两个温度采集点到激光加热点的竖直距离相等;The laser heating point is located 2mm directly below the micro-crack, the first temperature collection point is located directly above the corresponding position on the back of the laser heating point and directly above the corresponding position on the back of the micro-crack, and the second temperature collection point is located at the laser heating point Directly below the corresponding position on the back, the vertical distance from the two temperature collection points to the laser heating point is equal;

步骤二:设定半导体激光器和红外热像仪的工作参数;然后,启动半导体激光器和红外热像仪,半导体激光器发出脉冲激光束,脉冲激光束经聚焦透镜进行聚焦后垂直照射在激光加热点,由此对激光加热点进行加热;在加热过程中,红外热像仪实时探测被测金属工件背面的温度场变化,并根据探测结果实时生成热红外图像;Step 2: Set the working parameters of the semiconductor laser and the thermal imaging camera; then, start the semiconductor laser and the thermal imaging camera, the semiconductor laser emits a pulsed laser beam, the pulsed laser beam is focused by the focusing lens and irradiated vertically on the laser heating point, In this way, the laser heating point is heated; during the heating process, the infrared thermal imaging camera detects the temperature field change on the back of the measured metal workpiece in real time, and generates a thermal infrared image in real time according to the detection results;

步骤三:在热红外图像中选定温度值最高的坐标点,并将该坐标点定义为激光加热点在热红外图像中的对应点;Step 3: Select the coordinate point with the highest temperature value in the thermal infrared image, and define the coordinate point as the corresponding point of the laser heating point in the thermal infrared image;

步骤四:计算两个温度采集点到激光加热点的竖直距离在热红外图像中的对应像素点个数n;具体计算公式如下:Step 4: Calculate the number n of pixels corresponding to the vertical distance from the two temperature collection points to the laser heating point in the thermal infrared image; the specific calculation formula is as follows:

Figure BDA0002541985010000031
Figure BDA0002541985010000031

式中:d表示两个温度采集点到激光加热点的竖直距离;d1表示红外热像仪的竖直拍摄范围;f表示红外热像仪的焦距;u表示红外热像仪和被测金属工件之间的物距;V表示红外热像仪的竖直分辨率;d、d1、f、u、V均为已知量;In the formula: d represents the vertical distance from the two temperature collection points to the laser heating point; d 1 represents the vertical shooting range of the infrared thermal imager; f represents the focal length of the infrared thermal imager; u represents the infrared thermal imager and the measured Object distance between metal workpieces; V represents the vertical resolution of the infrared thermal imager; d, d 1 , f, u, V are all known quantities;

然后,根据计算结果在热红外图像中选定两个坐标点;两个坐标点满足如下条件:Then, according to the calculation results, two coordinate points are selected in the thermal infrared image; the two coordinate points meet the following conditions:

第一个坐标点位于激光加热点在热红外图像中的对应点的正上方,且该坐标点与激光加热点在热红外图像中的对应点之间相隔n个像素点;The first coordinate point is located directly above the corresponding point of the laser heating point in the thermal infrared image, and there are n pixels between the coordinate point and the corresponding point of the laser heating point in the thermal infrared image;

第二个坐标点位于激光加热点在热红外图像中的对应点的正下方,且该坐标点与激光加热点在热红外图像中的对应点之间相隔n个像素点;The second coordinate point is located directly below the corresponding point of the laser heating point in the thermal infrared image, and there are n pixels between the coordinate point and the corresponding point of the laser heating point in the thermal infrared image;

然后,将第一个坐标点定义为第一个温度采集点在热红外图像中的对应点,将第二个坐标点定义为第二个温度采集点在热红外图像中的对应点;Then, the first coordinate point is defined as the corresponding point of the first temperature collection point in the thermal infrared image, and the second coordinate point is defined as the corresponding point of the second temperature collection point in the thermal infrared image;

步骤五:持续记录两个温度采集点在热红外图像中的对应点的温度值,并根据记录结果绘制温度值变化曲线;Step 5: Continuously record the temperature values of the corresponding points of the two temperature collection points in the thermal infrared image, and draw the temperature value change curve according to the recording results;

步骤六:通过观察温度值变化曲线,得出当第一个温度采集点在热红外图像中的对应点的温度值为50℃时,第二个温度采集点在热红外图像中的对应点的温度值T(x,y,z,t);Step 6: By observing the temperature value change curve, it is obtained that when the temperature value of the corresponding point of the first temperature collection point in the thermal infrared image is 50°C, the temperature of the corresponding point of the second temperature collection point in the thermal infrared image temperature value T(x,y,z,t);

步骤七:根据第二个温度采集点在热红外图像中的对应点的温度值T(x,y,z,t),计算微裂纹的深度depth;具体计算公式如下:Step 7: According to the temperature value T(x, y, z, t) of the corresponding point of the second temperature collection point in the thermal infrared image, calculate the depth of the micro-crack; the specific calculation formula is as follows:

Figure BDA0002541985010000041
Figure BDA0002541985010000041

式中:x表示第二个温度采集点在热红外图像中的对应点的横轴坐标值;y表示第二个温度采集点在热红外图像中的对应点的纵轴坐标值;z表示第二个温度采集点在热红外图像中的对应点的竖轴坐标值;t表示第一个温度采集点在热红外图像中的对应点的温度值为50℃时对应的时刻;g(x,y,z)表示热源函数;ρ表示被测金属工件的密度;cp表示被测金属工件的恒压热容;k表示被测金属工件的导热系数;α表示被测金属工件的导温系数;ρd表示微裂纹处的密度;kd表示微裂纹处的导热系数。In the formula: x represents the abscissa coordinate value of the corresponding point of the second temperature collection point in the thermal infrared image; y represents the vertical axis coordinate value of the corresponding point of the second temperature collection point in the thermal infrared image; z represents the The vertical axis coordinates of the corresponding points of the two temperature collection points in the thermal infrared image; t indicates the corresponding moment when the temperature value of the corresponding point of the first temperature collection point in the thermal infrared image is 50°C; g(x, y, z) represents the heat source function; ρ represents the density of the tested metal workpiece; c p represents the constant pressure heat capacity of the measured metal workpiece; k represents the thermal conductivity of the measured metal workpiece; α represents the temperature conductivity of the measured metal workpiece ; ρ d represents the density at the microcrack; k d represents the thermal conductivity at the microcrack.

所述步骤二中,半导体激光器的工作参数设定过程如下:上位机生成代码指令,并将代码指令发送至单片机;单片机将代码指令转换为电平信号,并将电平信号发送至数字电位器,由此设定数字电位器的输出电压;数字电位器的输出电压经放大器进行放大后加载至半导体激光器,由此设定半导体激光器的工作参数。In the second step, the working parameter setting process of the semiconductor laser is as follows: the upper computer generates code instructions, and sends the code instructions to the single-chip microcomputer; the single-chip computer converts the code instructions into level signals, and sends the level signals to the digital potentiometer , thereby setting the output voltage of the digital potentiometer; the output voltage of the digital potentiometer is amplified by the amplifier and then loaded to the semiconductor laser, thereby setting the working parameters of the semiconductor laser.

与传统的金属表面微裂纹深度检测技术相比,本发明所述的基于透射式激光热成像的金属微裂纹深度检测系统及方法以激光加热技术和红外测温技术为基础,运用双点采样策略,实现了对金属工件进行表面微裂纹深度检测,由此不仅有效提高了检测精度、有效加快了检测速度,而且使得检测结果更加直观。Compared with the traditional metal surface micro-crack depth detection technology, the metal micro-crack depth detection system and method based on transmission laser thermal imaging in the present invention is based on laser heating technology and infrared temperature measurement technology, and uses a double-point sampling strategy , to realize the depth detection of surface micro-cracks on metal workpieces, thereby not only effectively improving the detection accuracy, effectively speeding up the detection speed, but also making the detection results more intuitive.

本发明有效解决了传统的金属表面微裂纹深度检测技术检测精度低、检测速度慢、检测结果直观性差的问题,适用于金属表面微裂纹深度检测。The invention effectively solves the problems of low detection accuracy, slow detection speed, and poor visibility of detection results in the traditional metal surface micro-crack depth detection technology, and is suitable for the detection of the metal surface micro-crack depth.

附图说明Description of drawings

图1是本发明所述系统的结构示意图。Fig. 1 is a schematic structural diagram of the system of the present invention.

图2是本发明所述方法中微裂纹、激光加热点、温度采集点的示意图。Fig. 2 is a schematic diagram of microcracks, laser heating points, and temperature collection points in the method of the present invention.

图3是本发明所述方法中第二个温度采集点在热红外图像中的对应点的温度值与微裂纹的深度之间的关系曲线图。Fig. 3 is a graph showing the relationship between the temperature value of the corresponding point in the thermal infrared image and the depth of the microcrack at the second temperature collection point in the method of the present invention.

图中:1-被测金属工件,2-聚焦透镜,3-半导体激光器,4-放大器,5-数字电位器,6-单片机,7-上位机,8-红外热像仪,9-稳压电源,10-供电电源。In the figure: 1-metal workpiece under test, 2-focusing lens, 3-semiconductor laser, 4-amplifier, 5-digital potentiometer, 6-single-chip microcomputer, 7-host computer, 8-infrared thermal imager, 9-voltage regulator Power supply, 10-power supply.

具体实施方式Detailed ways

基于透射式激光热成像的金属微裂纹深度检测系统,包括被测金属工件1、聚焦透镜2、半导体激光器3、放大器4、数字电位器5、单片机6、上位机7、红外热像仪8;Metal microcrack depth detection system based on transmission laser thermal imaging, including metal workpiece 1, focusing lens 2, semiconductor laser 3, amplifier 4, digital potentiometer 5, single-chip microcomputer 6, host computer 7, infrared thermal imager 8;

其中,半导体激光器3的出射端正对聚焦透镜2的入射端;聚焦透镜2的出射端正对被测金属工件1的正面;放大器4的信号输出端与半导体激光器3的信号输入端连接;数字电位器5的信号输出端与放大器4的信号输入端连接;单片机6的信号输出端与数字电位器5的信号输入端连接;上位机7的信号输出端与单片机6的信号输入端连接;红外热像仪8的探测端正对被测金属工件1的背面。Wherein, the outgoing end of semiconductor laser 3 is facing the incident end of focusing lens 2; The signal output terminal of 5 is connected with the signal input terminal of amplifier 4; the signal output terminal of single-chip microcomputer 6 is connected with the signal input terminal of digital potentiometer 5; the signal output terminal of upper computer 7 is connected with the signal input terminal of single-chip microcomputer 6; The detection end of the instrument 8 faces the back side of the metal workpiece 1 to be tested.

还包括稳压电源9、供电电源10;稳压电源9的输出端与数字电位器5的电压端连接;供电电源10的输出端分别与单片机6的供电端、数字电位器5的供电端、放大器4的供电端连接。Also comprise stabilized voltage power supply 9, power supply 10; The output end of stabilized voltage power supply 9 is connected with the voltage end of digital potentiometer 5; The power supply terminal of the amplifier 4 is connected.

所述数字电位器5为X9C103数字电位器;X9C103数字电位器的第五引脚与放大器4的信号输入端连接;单片机6的信号输出端分别与X9C103数字电位器的第一引脚、第二引脚、第七引脚连接;稳压电源9的输出端分别与X9C103数字电位器的第三引脚、第六引脚连接;供电电源10的输出端分别与X9C103数字电位器的第四引脚、第八引脚连接。Described digital potentiometer 5 is X9C103 digital potentiometer; The 5th pin of X9C103 digital potentiometer is connected with the signal input end of amplifier 4; pin and the seventh pin; the output terminal of the regulated power supply 9 is respectively connected to the third pin and the sixth pin of the X9C103 digital potentiometer; the output terminal of the power supply 10 is respectively connected to the fourth pin of the X9C103 digital potentiometer Pin, eighth pin connection.

基于透射式激光热成像的金属微裂纹深度检测方法(该方法是基于本发明所述的基于透射式激光热成像的金属微裂纹深度检测系统实现的),该方法是采用如下步骤实现的:Metal microcrack depth detection method based on transmission laser thermal imaging (this method is realized based on the metal microcrack depth detection system based on transmission laser thermal imaging of the present invention), the method is realized by the following steps:

步骤一:针对被测金属工件1正面出现的某一微裂纹,在被测金属工件1的正面选定激光加热点,在被测金属工件1的背面选定两个温度采集点;激光加热点和两个温度采集点满足如下条件:Step 1: For a certain microcrack that appears on the front of the metal workpiece 1 to be tested, select a laser heating point on the front of the metal workpiece 1 to be tested, and select two temperature collection points on the back of the metal workpiece 1 to be tested; the laser heating point and two temperature collection points meet the following conditions:

激光加热点位于微裂纹的正下方2mm处,第一个温度采集点既位于激光加热点背面对应处的正上方又位于微裂纹背面对应处的正上方,第二个温度采集点位于激光加热点背面对应处的正下方,两个温度采集点到激光加热点的竖直距离相等;The laser heating point is located 2mm directly below the micro-crack, the first temperature collection point is located directly above the corresponding position on the back of the laser heating point and directly above the corresponding position on the back of the micro-crack, and the second temperature collection point is located at the laser heating point Directly below the corresponding position on the back, the vertical distance from the two temperature collection points to the laser heating point is equal;

步骤二:设定半导体激光器3和红外热像仪8的工作参数;然后,启动半导体激光器3和红外热像仪8,半导体激光器3发出脉冲激光束,脉冲激光束经聚焦透镜2进行聚焦后垂直照射在激光加热点,由此对激光加热点进行加热;在加热过程中,红外热像仪8实时探测被测金属工件1背面的温度场变化,并根据探测结果实时生成热红外图像;Step 2: Set the operating parameters of the semiconductor laser 3 and the thermal imaging camera 8; then, start the semiconductor laser 3 and the thermal imaging camera 8, the semiconductor laser 3 emits a pulsed laser beam, and the pulsed laser beam is focused by the focusing lens 2 and vertical The laser heating point is irradiated, thereby heating the laser heating point; during the heating process, the infrared thermal imager 8 detects the temperature field change on the back side of the metal workpiece 1 to be tested in real time, and generates a thermal infrared image in real time according to the detection result;

步骤三:在热红外图像中选定温度值最高的坐标点,并将该坐标点定义为激光加热点在热红外图像中的对应点;Step 3: Select the coordinate point with the highest temperature value in the thermal infrared image, and define the coordinate point as the corresponding point of the laser heating point in the thermal infrared image;

步骤四:计算两个温度采集点到激光加热点的竖直距离在热红外图像中的对应像素点个数n;具体计算公式如下:Step 4: Calculate the number n of pixels corresponding to the vertical distance from the two temperature collection points to the laser heating point in the thermal infrared image; the specific calculation formula is as follows:

Figure BDA0002541985010000061
Figure BDA0002541985010000061

式中:d表示两个温度采集点到激光加热点的竖直距离;d1表示红外热像仪8的竖直拍摄范围;f表示红外热像仪8的焦距;u表示红外热像仪8和被测金属工件1之间的物距;V表示红外热像仪8的竖直分辨率;d、d1、f、u、V均为已知量;In the formula: d represents the vertical distance from the two temperature collection points to the laser heating point; d1 represents the vertical shooting range of the infrared thermal imager 8; f represents the focal length of the infrared thermal imager 8; u represents the infrared thermal imager 8 and the object distance between the measured metal workpiece 1; V represents the vertical resolution of the thermal imaging camera 8; d, d 1 , f, u, and V are all known quantities;

然后,根据计算结果在热红外图像中选定两个坐标点;两个坐标点满足如下条件:Then, according to the calculation results, two coordinate points are selected in the thermal infrared image; the two coordinate points meet the following conditions:

第一个坐标点位于激光加热点在热红外图像中的对应点的正上方,且该坐标点与激光加热点在热红外图像中的对应点之间相隔n个像素点;The first coordinate point is located directly above the corresponding point of the laser heating point in the thermal infrared image, and there are n pixels between the coordinate point and the corresponding point of the laser heating point in the thermal infrared image;

第二个坐标点位于激光加热点在热红外图像中的对应点的正下方,且该坐标点与激光加热点在热红外图像中的对应点之间相隔n个像素点;The second coordinate point is located directly below the corresponding point of the laser heating point in the thermal infrared image, and there are n pixels between the coordinate point and the corresponding point of the laser heating point in the thermal infrared image;

然后,将第一个坐标点定义为第一个温度采集点在热红外图像中的对应点,将第二个坐标点定义为第二个温度采集点在热红外图像中的对应点;Then, the first coordinate point is defined as the corresponding point of the first temperature collection point in the thermal infrared image, and the second coordinate point is defined as the corresponding point of the second temperature collection point in the thermal infrared image;

步骤五:持续记录两个温度采集点在热红外图像中的对应点的温度值,并根据记录结果绘制温度值变化曲线;Step 5: Continuously record the temperature values of the corresponding points of the two temperature collection points in the thermal infrared image, and draw the temperature value change curve according to the recording results;

步骤六:通过观察温度值变化曲线,得出当第一个温度采集点在热红外图像中的对应点的温度值为50℃时,第二个温度采集点在热红外图像中的对应点的温度值T(x,y,z,t);Step 6: By observing the temperature value change curve, it is obtained that when the temperature value of the corresponding point of the first temperature collection point in the thermal infrared image is 50°C, the temperature of the corresponding point of the second temperature collection point in the thermal infrared image temperature value T(x,y,z,t);

步骤七:根据第二个温度采集点在热红外图像中的对应点的温度值T(x,y,z,t),计算微裂纹的深度depth;具体计算公式如下:Step 7: According to the temperature value T(x, y, z, t) of the corresponding point of the second temperature collection point in the thermal infrared image, calculate the depth of the micro-crack; the specific calculation formula is as follows:

Figure BDA0002541985010000071
Figure BDA0002541985010000071

式中:x表示第二个温度采集点在热红外图像中的对应点的横轴坐标值;y表示第二个温度采集点在热红外图像中的对应点的纵轴坐标值;z表示第二个温度采集点在热红外图像中的对应点的竖轴坐标值;t表示第一个温度采集点在热红外图像中的对应点的温度值为50℃时对应的时刻;g(x,y,z)表示热源函数;ρ表示被测金属工件1的密度;cp表示被测金属工件1的恒压热容;k表示被测金属工件1的导热系数;α表示被测金属工件1的导温系数;ρd表示微裂纹处的密度;kd表示微裂纹处的导热系数。In the formula: x represents the abscissa coordinate value of the corresponding point of the second temperature collection point in the thermal infrared image; y represents the vertical axis coordinate value of the corresponding point of the second temperature collection point in the thermal infrared image; z represents the The vertical axis coordinates of the corresponding points of the two temperature collection points in the thermal infrared image; t indicates the corresponding moment when the temperature value of the corresponding point of the first temperature collection point in the thermal infrared image is 50°C; g(x, y, z) represents the heat source function; ρ represents the density of the tested metal workpiece 1; c p represents the constant pressure heat capacity of the measured metal workpiece 1; k represents the thermal conductivity of the tested metal workpiece 1; The thermal conductivity; ρ d represents the density at the micro-crack; k d represents the thermal conductivity at the micro-crack.

所述步骤二中,半导体激光器3的工作参数设定过程如下:上位机7生成代码指令,并将代码指令发送至单片机6;单片机6将代码指令转换为电平信号,并将电平信号发送至数字电位器5,由此设定数字电位器5的输出电压;数字电位器5的输出电压经放大器4进行放大后加载至半导体激光器3,由此设定半导体激光器3的工作参数。In said step 2, the working parameter setting process of the semiconductor laser 3 is as follows: the host computer 7 generates a code instruction, and sends the code instruction to the single-chip microcomputer 6; the single-chip computer 6 converts the code instruction into a level signal, and sends the level signal To the digital potentiometer 5, thereby setting the output voltage of the digital potentiometer 5; the output voltage of the digital potentiometer 5 is amplified by the amplifier 4 and then loaded to the semiconductor laser 3, thereby setting the working parameters of the semiconductor laser 3.

虽然以上描述了本发明的具体实施方式,但是本领域的技术人员应当理解,这些仅是举例说明,本发明的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本发明的原理和实质的前提下,可以对这些实施方式作出多种变更或修改,但这些变更和修改均落入本发明的保护范围。Although the specific embodiments of the present invention have been described above, those skilled in the art should understand that these are only examples, and the protection scope of the present invention is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principle and essence of the present invention, but these changes and modifications all fall within the protection scope of the present invention.

Claims (4)

1.一种基于透射式激光热成像的金属微裂纹深度检测方法,其特征在于:该方法是基于一种基于透射式激光热成像的金属微裂纹深度检测系统实现的,该系统包括被测金属工件(1)、聚焦透镜(2)、半导体激光器(3)、放大器(4)、数字电位器(5)、单片机(6)、上位机(7)、红外热像仪(8);1. A metal microcrack depth detection method based on transmission laser thermal imaging, characterized in that: the method is based on a metal microcrack depth detection system based on transmission laser thermal imaging, the system includes the measured metal Workpiece (1), focusing lens (2), semiconductor laser (3), amplifier (4), digital potentiometer (5), single-chip microcomputer (6), upper computer (7), infrared thermal imager (8); 其中,半导体激光器(3)的出射端正对聚焦透镜(2)的入射端;聚焦透镜(2)的出射端正对被测金属工件(1)的正面;放大器(4)的信号输出端与半导体激光器(3)的信号输入端连接;数字电位器(5)的信号输出端与放大器(4)的信号输入端连接;单片机(6)的信号输出端与数字电位器(5)的信号输入端连接;上位机(7)的信号输出端与单片机(6)的信号输入端连接;红外热像仪(8)的探测端正对被测金属工件(1)的背面;Wherein, the outgoing end of the semiconductor laser (3) is facing the incident end of the focusing lens (2); the outgoing end of the focusing lens (2) is facing the front of the metal workpiece (1) to be tested; The signal input terminal of (3) is connected; The signal output terminal of digital potentiometer (5) is connected with the signal input terminal of amplifier (4); The signal output terminal of single-chip microcomputer (6) is connected with the signal input terminal of digital potentiometer (5) The signal output end of the host computer (7) is connected with the signal input end of the single-chip microcomputer (6); the detection end of the infrared thermal imager (8) is facing the back side of the metal workpiece (1) to be tested; 该方法是采用如下步骤实现的:This method is realized by adopting the following steps: 步骤一:针对被测金属工件(1)正面出现的某一微裂纹,在被测金属工件(1)的正面选定激光加热点,在被测金属工件(1)的背面选定两个温度采集点;激光加热点和两个温度采集点满足如下条件:Step 1: For a microcrack that appears on the front side of the metal workpiece (1) to be tested, select a laser heating point on the front side of the metal workpiece (1) to be tested, and select two temperature points on the back side of the metal workpiece (1) to be tested. Collection point; laser heating point and two temperature collection points meet the following conditions: 激光加热点位于微裂纹的正下方2mm处,第一个温度采集点既位于激光加热点背面对应处的正上方又位于微裂纹背面对应处的正上方,第二个温度采集点位于激光加热点背面对应处的正下方,两个温度采集点到激光加热点的竖直距离相等;The laser heating point is located 2mm directly below the micro-crack, the first temperature collection point is located directly above the corresponding position on the back of the laser heating point and directly above the corresponding position on the back of the micro-crack, and the second temperature collection point is located at the laser heating point Directly below the corresponding position on the back, the vertical distance from the two temperature collection points to the laser heating point is equal; 步骤二:设定半导体激光器(3)和红外热像仪(8)的工作参数;然后,启动半导体激光器(3)和红外热像仪(8),半导体激光器(3)发出脉冲激光束,脉冲激光束经聚焦透镜(2)进行聚焦后垂直照射在激光加热点,由此对激光加热点进行加热;在加热过程中,红外热像仪(8)实时探测被测金属工件(1)背面的温度场变化,并根据探测结果实时生成热红外图像;Step 2: set the operating parameters of the semiconductor laser (3) and the thermal imaging camera (8); then, start the semiconductor laser (3) and the thermal imaging camera (8), and the semiconductor laser (3) sends a pulsed laser beam, pulse The laser beam is focused by the focusing lens (2) and then irradiated vertically on the laser heating point, thereby heating the laser heating point; during the heating process, the infrared thermal imager (8) detects in real time The temperature field changes, and thermal infrared images are generated in real time according to the detection results; 步骤三:在热红外图像中选定温度值最高的坐标点,并将该坐标点定义为激光加热点在热红外图像中的对应点;Step 3: Select the coordinate point with the highest temperature value in the thermal infrared image, and define the coordinate point as the corresponding point of the laser heating point in the thermal infrared image; 步骤四:计算两个温度采集点到激光加热点的竖直距离在热红外图像中的对应像素点个数n;具体计算公式如下:Step 4: Calculate the number n of pixels corresponding to the vertical distance from the two temperature collection points to the laser heating point in the thermal infrared image; the specific calculation formula is as follows:
Figure FDA0003897395340000021
Figure FDA0003897395340000021
式中:d表示两个温度采集点到激光加热点的竖直距离;d1表示红外热像仪(8)的竖直拍摄范围;f表示红外热像仪(8)的焦距;u表示红外热像仪(8)和被测金属工件(1)之间的物距;V表示红外热像仪(8)的竖直分辨率;d、d1、f、u、V均为已知量;In the formula: d represents the vertical distance from two temperature collection points to the laser heating point; d 1 represents the vertical shooting range of the thermal imager (8); f represents the focal length of the thermal imager (8); u represents the infrared Object distance between thermal imager (8) and measured metal workpiece (1); V represents the vertical resolution of infrared thermal imager (8); d, d 1 , f, u, V are all known quantities ; 然后,根据计算结果在热红外图像中选定两个坐标点;两个坐标点满足如下条件:Then, according to the calculation results, two coordinate points are selected in the thermal infrared image; the two coordinate points meet the following conditions: 第一个坐标点位于激光加热点在热红外图像中的对应点的正上方,且该坐标点与激光加热点在热红外图像中的对应点之间相隔n个像素点;The first coordinate point is located directly above the corresponding point of the laser heating point in the thermal infrared image, and there are n pixels between the coordinate point and the corresponding point of the laser heating point in the thermal infrared image; 第二个坐标点位于激光加热点在热红外图像中的对应点的正下方,且该坐标点与激光加热点在热红外图像中的对应点之间相隔n个像素点;The second coordinate point is located directly below the corresponding point of the laser heating point in the thermal infrared image, and there are n pixels between the coordinate point and the corresponding point of the laser heating point in the thermal infrared image; 然后,将第一个坐标点定义为第一个温度采集点在热红外图像中的对应点,将第二个坐标点定义为第二个温度采集点在热红外图像中的对应点;Then, the first coordinate point is defined as the corresponding point of the first temperature collection point in the thermal infrared image, and the second coordinate point is defined as the corresponding point of the second temperature collection point in the thermal infrared image; 步骤五:持续记录两个温度采集点在热红外图像中的对应点的温度值,并根据记录结果绘制温度值变化曲线;Step 5: Continuously record the temperature values of the corresponding points of the two temperature collection points in the thermal infrared image, and draw the temperature value change curve according to the recording results; 步骤六:通过观察温度值变化曲线,得出当第二个温度采集点在热红外图像中的对应点的温度值为50℃时,第一个温度采集点在热红外图像中的对应点的温度值T(x,y,z,t);Step 6: By observing the temperature value change curve, it is obtained that when the temperature value of the corresponding point of the second temperature collection point in the thermal infrared image is 50°C, the temperature of the corresponding point of the first temperature collection point in the thermal infrared image temperature value T(x,y,z,t); 步骤七:根据第一个温度采集点在热红外图像中的对应点的温度值T(x,y,z,t),计算微裂纹的深度depth;具体计算公式如下:Step 7: According to the temperature value T(x, y, z, t) of the corresponding point of the first temperature collection point in the thermal infrared image, calculate the depth of the micro-crack; the specific calculation formula is as follows:
Figure FDA0003897395340000031
Figure FDA0003897395340000031
式中:x表示第一个温度采集点在热红外图像中的对应点的横轴坐标值;y表示第一个温度采集点在热红外图像中的对应点的纵轴坐标值;z表示第一个温度采集点在热红外图像中的对应点的竖轴坐标值;t表示第二个温度采集点在热红外图像中的对应点的温度值为50℃时对应的时刻;g(x,y,z)表示热源函数;ρ表示被测金属工件(1)的密度;cp表示被测金属工件(1)的恒压热容;k表示被测金属工件(1)的导热系数;α表示被测金属工件(1)的导温系数;ρd表示微裂纹处的密度;kd表示微裂纹处的导热系数。In the formula: x represents the abscissa coordinate value of the corresponding point of the first temperature collection point in the thermal infrared image; y represents the vertical axis coordinate value of the corresponding point of the first temperature collection point in the thermal infrared image; z represents the first temperature collection point The vertical axis coordinate value of the corresponding point of a temperature collection point in the thermal infrared image; t indicates the corresponding moment when the temperature value of the corresponding point of the second temperature collection point in the thermal infrared image is 50°C; g(x, y, z) represents the heat source function; ρ represents the density of the tested metal workpiece (1); c p represents the constant pressure heat capacity of the measured metal workpiece (1); k represents the thermal conductivity of the measured metal workpiece (1); Indicates the thermal conductivity of the tested metal workpiece (1); ρ d indicates the density at the micro-crack; k d indicates the thermal conductivity at the micro-crack.
2.根据权利要求1所述的基于透射式激光热成像的金属微裂纹深度检测方法,其特征在于:所述步骤二中,半导体激光器(3)的工作参数设定过程如下:上位机(7)生成代码指令,并将代码指令发送至单片机(6);单片机(6)将代码指令转换为电平信号,并将电平信号发送至数字电位器(5),由此设定数字电位器(5)的输出电压;数字电位器(5)的输出电压经放大器(4)进行放大后加载至半导体激光器(3),由此设定半导体激光器(3)的工作参数。2. the metal microcrack depth detection method based on transmission laser thermal imaging according to claim 1, is characterized in that: in the described step 2, the working parameter setting process of semiconductor laser (3) is as follows: upper computer (7 ) generates a code command, and sends the code command to the single-chip microcomputer (6); the single-chip microcomputer (6) converts the code command into a level signal, and sends the level signal to the digital potentiometer (5), thereby setting the digital potentiometer (5); the output voltage of the digital potentiometer (5) is amplified by the amplifier (4) and then loaded to the semiconductor laser (3), thereby setting the operating parameters of the semiconductor laser (3). 3.根据权利要求1所述的基于透射式激光热成像的金属微裂纹深度检测方法,其特征在于:所述一种基于透射式激光热成像的金属微裂纹深度检测系统还包括稳压电源(9)、供电电源(10);稳压电源(9)的输出端与数字电位器(5)的电压端连接;供电电源(10)的输出端分别与单片机(6)的供电端、数字电位器(5)的供电端、放大器(4)的供电端连接。3. the metal microcrack depth detection method based on transmission laser thermal imaging according to claim 1, characterized in that: said a kind of metal microcrack depth detection system based on transmission laser thermal imaging also includes a stabilized power supply ( 9), the power supply (10); the output terminal of the stabilized power supply (9) is connected with the voltage terminal of the digital potentiometer (5); The power supply terminal of the device (5) and the power supply terminal of the amplifier (4) are connected. 4.根据权利要求3所述的基于透射式激光热成像的金属微裂纹深度检测方法,其特征在于:所述数字电位器(5)为X9C103数字电位器;X9C103数字电位器的第五引脚与放大器(4)的信号输入端连接;单片机(6)的信号输出端分别与X9C103数字电位器的第一引脚、第二引脚、第七引脚连接;稳压电源(9)的输出端分别与X9C103数字电位器的第三引脚、第六引脚连接;供电电源(10)的输出端分别与X9C103数字电位器的第四引脚、第八引脚连接。4. The metal microcrack depth detection method based on transmission laser thermal imaging according to claim 3, characterized in that: the digital potentiometer (5) is an X9C103 digital potentiometer; the fifth pin of the X9C103 digital potentiometer Connect with the signal input end of the amplifier (4); the signal output end of the single-chip microcomputer (6) is respectively connected with the first pin, the second pin, the seventh pin of the X9C103 digital potentiometer; the output of the regulated power supply (9) The terminals are respectively connected with the third pin and the sixth pin of the X9C103 digital potentiometer; the output terminals of the power supply (10) are respectively connected with the fourth pin and the eighth pin of the X9C103 digital potentiometer.
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