CN111508971A - Active matrix substrate and inspection device thereof - Google Patents
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- CN111508971A CN111508971A CN202010075707.4A CN202010075707A CN111508971A CN 111508971 A CN111508971 A CN 111508971A CN 202010075707 A CN202010075707 A CN 202010075707A CN 111508971 A CN111508971 A CN 111508971A
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- 238000007689 inspection Methods 0.000 title claims abstract description 127
- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 239000011159 matrix material Substances 0.000 title claims abstract description 51
- 239000000523 sample Substances 0.000 claims description 134
- 238000005259 measurement Methods 0.000 claims description 69
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 238000012790 confirmation Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31712—Input or output aspects
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- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
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Abstract
有源矩阵基板(1)具备:多个栅极线;多个数据线;第一端子组,其包含与多个栅极线的一个端部连接的多个端子;以及第二端子组(15a),其包含与多个数据线的一个端部连接的多个端子(151)。有源矩阵基板(1)具备多个检查用端子,所述多个检查用端子分散地配置于第一端子组和所述第二端子组中的至少一个端子组(15a)的多个端子(151)之间。
An active matrix substrate (1) includes: a plurality of gate lines; a plurality of data lines; a first terminal group including a plurality of terminals connected to one end of the plurality of gate lines; and a second terminal group (15a) ), which includes a plurality of terminals (151) connected to one end of a plurality of data lines. The active matrix substrate (1) is provided with a plurality of terminals for inspection, and the plurality of terminals for inspection are distributed in a plurality of terminals ( 151) between.
Description
技术领域technical field
本发明涉及一种有源矩阵基板以及其检查装置。The present invention relates to an active matrix substrate and an inspection device thereof.
背景技术Background technique
日本特开2008-151954号公报公开了一种用于在显示面板的制造工序中,对显示面板中的扫描线、数据线的缺陷进行检测的检查装置。在基于该检查装置的检查方法中,在对扫描线、数据线的缺陷进行检测的检查(以下,主检查)时,针对与扫描线、数据线连接的端子组的每个端子连接探针,对探针施加规定的电压而使显示面板中的像素电路动作。在上述日本特开2008-151954号公报中,以与各扫描线、各数据线连接的端子中的配置于两端的两个端子成为相同电位的方式实施内部接线。在主检查之前,在与该两个端子连接的探针间的电阻值比规定电阻值大的情况下,判断为探针未适当地接触、即在探针与端子之间产生偏差。Japanese Patent Laid-Open No. 2008-151954 discloses an inspection apparatus for detecting defects in scan lines and data lines in a display panel in a manufacturing process of the display panel. In the inspection method based on this inspection apparatus, in the inspection (hereinafter, main inspection) for detecting defects of the scanning lines and the data lines, probes are connected to each terminal of the terminal group connected to the scanning lines and the data lines, A predetermined voltage is applied to the probe to operate the pixel circuit in the display panel. In the above-mentioned Japanese Patent Application Laid-Open No. 2008-151954, the internal wiring is implemented so that two terminals arranged at both ends of the terminals connected to each scanning line and each data line have the same potential. Before the main inspection, when the resistance value between the probes connected to the two terminals is greater than the predetermined resistance value, it is determined that the probes are not properly contacted, that is, a deviation occurs between the probes and the terminals.
如上述日本特开2008-151954号公报那样,在主检查之前,通过事先检测配置于与各扫描线、各数据线连接的端子组的两端的两个端子与探针的接触状态并调节探针的位置,从而能够适当地实行主检查。然而,在上述日本特开2008-151954号公报中,由于必须以与各扫描线、各数据线连接的端子组中的两端的端子成为相同电位的方式进行接线,因此端子区域的设计的自由度容易下降。As described in Japanese Patent Laid-Open No. 2008-151954 mentioned above, before the main inspection, the probes are adjusted by detecting the contact states of the two terminals arranged at both ends of the terminal group connected to each scanning line and each data line and the probes in advance. position so that the main inspection can be performed appropriately. However, in the above-mentioned Japanese Unexamined Patent Application Publication No. 2008-151954, since it is necessary to connect the terminals at both ends of the terminal group connected to each scanning line and each data line so that the potentials are the same, there is a degree of freedom in the design of the terminal area. easy to fall.
发明内容SUMMARY OF THE INVENTION
鉴于上述课题而完成的有源矩阵基板包括:基板;多个栅极线,其在所述基板上沿一个方向排列;多个数据线,其在所述基板上以与所述多个栅极线交叉的方式排列;第一端子组,其排列有与所述多个栅极线的一个端部连接的多个端子;第二端子组,其排列有与所述多个数据线的一个端部连接的多个端子;以及多个检查用端子,其分散地配置于所述第一端子组与所述第二端子组中的至少一个端子组中的所述多个端子之间并相互接线。An active matrix substrate completed in view of the above problems includes: a substrate; a plurality of gate lines arranged in one direction on the substrate; and a plurality of data lines on the substrate to be connected with the plurality of gates Lines are arranged in a crossing manner; a first terminal group, which is arranged with a plurality of terminals connected to one end of the plurality of gate lines; a second terminal group, which is arranged with one end of the plurality of data lines a plurality of terminals connected to each other; and a plurality of terminals for inspection, which are distributed between the plurality of terminals in at least one of the first terminal group and the second terminal group and are connected to each other .
根据上述构成,端子区域的设计的自由度不易下降且能够适当地进行动作确认检查。According to the above configuration, the degree of freedom in the design of the terminal region is not easily reduced, and the operation confirmation inspection can be appropriately performed.
附图说明Description of drawings
图1为表示第一实施方式中的有源矩阵基板与有源矩阵基板的检查装置的示意图。FIG. 1 is a schematic diagram showing an active matrix substrate and an inspection apparatus for the active matrix substrate in the first embodiment.
图2为表示图1所示的有源矩阵基板的概要构成的俯视图。FIG. 2 is a plan view showing a schematic configuration of the active matrix substrate shown in FIG. 1 .
图3为图2所示的成像区域中的像素的等效电路图。FIG. 3 is an equivalent circuit diagram of a pixel in the imaging area shown in FIG. 2 .
图4为表示图2所示的接片(tab)15a的结构的示意图。FIG. 4 is a schematic view showing the structure of the
图5为表示图2所示的接片15b的结构的示意图。FIG. 5 is a schematic view showing the structure of the
图6为表示图2所示的一部分的接片15a与图1所示的检查装置2的一部分的结构例的示意图。FIG. 6 is a schematic diagram showing a configuration example of a part of the
图7为表示第二实施方式中的有源矩阵基板的接片15a与检查装置的概要构成的示意图。FIG. 7 is a schematic diagram showing a schematic configuration of the
具体实施方式Detailed ways
以下,参照附图对有源矩阵基板以及有源矩阵基板的检查装置所涉及的实施方式详细地进行说明。对图中相同或相当部分标注相同附图标记,并且不重复其说明。Hereinafter, embodiments related to an active matrix substrate and an inspection apparatus for an active matrix substrate will be described in detail with reference to the accompanying drawings. The same reference numerals are attached to the same or corresponding parts in the drawings, and the description thereof will not be repeated.
[第一实施方式][First Embodiment]
图1为表示本实施方式中的有源矩阵基板1与有源矩阵基板1的检查装置2的示意图。在本实施方式中,在X射线的成像面板等中使用的有源矩阵基板1的制造工序等中,在进行有源矩阵基板1的动作确认检查前,在检查装置2中检查是否是可适当地进行动作确认检查的状态。以下,将由检查装置2进行的检查称作事先检查。FIG. 1 is a schematic diagram showing an
(构成)(constitute)
图2为表示有源矩阵基板1的概要构成的俯视图。有源矩阵基板1能够用于例如X射线的成像面板。也就是说,通过在有源矩阵基板1的一方的面侧设置用于将透射了被摄体的X射线转换为荧光(闪烁光)的闪烁体,从而能够制成X射线成像面板。以下,对有源矩阵基板1的结构具体地进行说明。FIG. 2 is a plan view showing a schematic configuration of the
有源矩阵基板1具有多个数据线10、和与多个数据线10交叉的多个栅极线11。在该例中,数据线10与栅极线11分别设置有3072根。有源矩阵基板1具有由以数据线10和栅极线11包围而成的多个区域(以下,像素)构成的成像区域Ra。The
在成像区域Ra的内侧以包围成像区域Ra的方式配置有偏置布线13。另外,虽在该图中省略图示,但从偏置布线13拉出的布线设置于各像素内。在以下的说明中,从配置于像素内的偏置布线13拉出的布线部分也被称作偏置布线13。The
在成像区域Ra的外侧的区域中,在数据线10的一个端部侧的区域配置有N(N为2以上的自然数)个接片15a,在栅极线11的一个端部侧的区域配置有N个接片15b。在该例中,接片15a与接片15b分别配置有12个。针对接片15a、15b的详情将在下文中叙述。In the region outside the imaging region Ra, N (N is a natural number of 2 or more)
在此,对成像区域Ra的像素的结构进行说明。图3为表示像素的结构的等效电路图。如图3所示,像素P具有TFT(Thin Film Transistor)21和光电转换元件22。Here, the configuration of the pixels in the imaging area Ra will be described. FIG. 3 is an equivalent circuit diagram showing the structure of a pixel. As shown in FIG. 3 , the pixel P has a TFT (Thin Film Transistor) 21 and a
光电转换元件22具有PIN光电二极管和一对电极(阴极电极、阳极电极)。TFT21的源极与数据线10连接,TFT21的漏极与光电转换元件22的阴极电极连接。光电转换元件22的阳极电极与偏置布线13连接。另外,配置于像素内的偏置布线13经由未图示的层间绝缘膜而与光电转换元件22的阳极电极连接。The
此外,虽在图3中未图示,但有源矩阵基板1连接有施加扫描电压来对栅极线11进行扫描的驱动电路、和从数据线10读取由PIN光电二极管转换后的电荷的读取电路。当与被扫描的栅极线11连接的TFT21成为导通状态时,与由光电转换元件22转换后的电荷对应的电信号经由数据线10而被输出至读取电路。In addition, although not shown in FIG. 3 , the
接着,对本实施方式中的接片15a、15b进行说明。Next, the
图4为表示一个接片15a的结构的示意图。如图4所示,接片15a包含多个数据端子151、多个偏置用端子152、以及多个虚拟(dummy)端子153。FIG. 4 is a schematic view showing the structure of one
各数据端子151与互不相同的一个数据线10的一方端连接。如上所述,在该例中,数据线10设置有3072根,接片15a设置有12个,在各接片15a排列有256个数据端子151。Each
此外,在各接片15a以隔着256个数据端子151(以下数据端子组)的方式设置有10个偏置用端子152(152L、152R),以隔着偏置用端子152L、152R的方式设置有10个虚拟端子153(153L、153R)。换言之,按照以数据端子组为中心且在数据端子151的排列方向上为对称的方式,配置有各五个偏置用端子152L和偏置用端子152R、各五个虚拟端子153L和虚拟端子153R。也就是说,在该例中,在一个接片15a设置有共计276个端子。In addition, ten bias terminals 152 ( 152L and 152R ) are provided on each of the
各端子的宽度例如为40μm左右,各端子以空开例如70μm左右的一定的间隔的方式配置。The width of each terminal is, for example, about 40 μm, and each terminal is arranged at a predetermined interval, for example, about 70 μm.
10个偏置用端子152L、152R与偏置布线13连接。偏置用端子152L以及152R经由布线160而相互接线。The ten
10个虚拟端子153(153L、153R)在该例中为未与其他元件电连接的预备用的端子。The ten dummy terminals 153 ( 153L, 153R) are spare terminals that are not electrically connected to other elements in this example.
另外,虽在图4中省略图示,但其他接片15a也具有与上述的接片15a相同的构成。各接片15a中的偏置用端子152不仅与相同的接片15a中的偏置用端子152接线,也与其他接片15a中的偏置用端子152经由布线160相互接线。In addition, although illustration is abbreviate|omitted in FIG. 4, the
接下来对接片15b的结构进行说明。图5为表示一个接片15b的结构的示意图。如图5所示,接片15b包含多个栅极端子154、多个偏置用端子152、以及多个虚拟端子153。Next, the structure of the facing
各栅极端子154与互不相同的一个栅极线11的一方端连接。如上所述,在本实施方式中,栅极线11设置有3072根,接片15b设置有12个,在各接片15b排列有256个栅极端子154。Each
在各接片15b以隔着256个栅极端子154(以下栅极端子组)的方式设置有10个偏置用端子152(152U、152D),并以隔着偏置用端子152U、152D的方式设置有10个虚拟端子153(153U、153D)。换言之,按照以栅极端子组为中心且在栅极端子154的排列方向上为对称的方式,配置有各五个偏置用端子152U和偏置用端子152D、各五个虚拟端子153U和虚拟端子153D。也就是说,在该例中,在一个接片15b设置有共计276个端子。Ten bias terminals 152 (152U, 152D) are provided on each of the
10个偏置用端子152(152U、152D)与偏置布线13连接。偏置用端子152U以及152D经由布线161相互接线。另外,布线161也可以与布线160(参照图4)电连接。Ten bias terminals 152 ( 152U, 152D) are connected to the
10个虚拟端子153(153L、153R)在该例中为未与其他元件电连接的预备用的端子。The ten dummy terminals 153 ( 153L, 153R) are spare terminals that are not electrically connected to other elements in this example.
另外,虽在图5中省略图示,但其他接片15b也具有与上述的接片15b相同的构成。各接片15b中的偏置用端子152不仅与相同的接片15b中的偏置用端子152接线,也与其他接片15b中的偏置用端子152经由布线161相互接线。In addition, although illustration is abbreviate|omitted in FIG. 5, the
在使用有源矩阵基板1进行成像时,在各偏置用端子152施加有与光电转换元件22成为反偏置的电压。此外,各接片15a、15b中的偏置用端子152中的两个偏置用端子152用于进行有源矩阵基板1的成像检查前的事先检查。以下,对用于进行事先检查的检查装置2和检查方法的具体例进行说明。When imaging is performed using the
图6为表示一部分的接片15a和检查装置2的一部分的结构例的示意图。如图6所示,检查装置2针对一个接片15a具备一个探针组200。另外,虽在图6中省略图示,但检查装置2针对各接片15a和各接片15b具备一个探针组200。FIG. 6 is a schematic diagram showing a configuration example of a part of the
探针组200包含与接片15a或接片15b中的端子数相同数量的探针201。也就是说,在该例中,一个探针组200中包含276个探针201。The probe set 200 includes the same number of
在利用检查装置2对有源矩阵基板1进行事先检查时,使接片15a中的各端子(数据端子151、偏置用端子152L、152R、虚拟端子153L、153R)接触与该接片15a对应的探针组200的各探针201。此外,使接片15b中的各端子(栅极端子154、偏置用端子152U、152D、虚拟端子153U、153D)接触与该接片15b对应的探针组200的各探针201。When the
测量电路210具备每探针组200的一组开关电路211a、211b、电位测量电路212、以及电源213。The
开关电路211a与一个探针201(201a)连接。探针201a为针对接片15a中的一个偏置用端子152L而设置的端子。The
开关电路211b和与探针201a不同的一个探针201(201b)连接。探针201b为针对接片15a中的一个偏置用端子152R而设置的端子。The
以下,在将与开关电路211a、211b连接的探针201a、201b和其他探针201进行区别的情况下,将探针201a、201b称作测量候选探针。Hereinafter, when the
开关电路211a和开关电路211b分别具有例如由晶体管等构成的两个开关元件2111、2112。开关元件2111与电位测量电路212连接,开关元件2112与电源213连接。开关电路211a、211b中的开关元件2111、2112的导通/截止的控制通过未图示的开关控制电路来控制。The
测量电路210按顺序测量所有测量候选探针(201a、201b)的电压。在图6中,示出对探针组200_1的探针201a的电位进行测量的情况下的开关元件2111、2112的导通/截止状态。The
在对探针组200_1的探针201a的电位进行测量的情况下,控制各开关电路211a、211b的导通/截止,以便仅探针组200_1中的探针201a与电位测量电路212导通。也就是说,如图6所示,仅将所有开关电路211a、211b中的开关元件2111中的、与探针组200_1的探针201a连接的开关电路211a的开关元件2111设为导通,将其他开关电路211a、211b的开关元件2111设为截止。此外,仅将所有开关元件2112中的、与探针组200_1的探针201a连接的开关元件2112设为截止,将其他开关元件2112设为导通。由此,仅测量电位的一个测量候选探针与电位测量电路212电连接,除此以外的测量候选探针与电源213电连接。以下,为了便于说明,将测量电位的一个测量候选探针称作测量探针201P。When measuring the potential of the
电位测量电路212与各开关电路211a、211b中的开关元件2111连接。电位测量电路212经由被设为导通的开关元件2111来测量并输出测量探针201P中的电压。The
电源213与各开关电路211a、211b中的开关元件2112连接。电源213经由被设为导通的开关元件2112对测量探针201以外的测量候选探针(201a、201b)施加偏置电压。The
在本实施方式中的事先检查中,首先将检查装置2中的各探针组200配置为与有源矩阵基板1中的接片15a或15b的各端子连接。之后,通过测量电路210中的开关控制电路(图示略),从各探针组200的测量候选探针(201a或201b)中选择测量探针201P,并将与测量探针201P连接的开关元件2111控制为导通,将与测量探针201P连接的开关元件2112控制为截止。而且,将与测量探针201P以外的测量候选探针连接的开关元件2111和开关元件2112分别控制为截止和导通。并且,在电位测量电路212中,对测量探针201P中的电压进行测量。In the pre-inspection in the present embodiment, each
如上所述,所有接片15a中的偏置用端子152(152L、152R)相互接线(参照图4)。因此,当从电源213对测量探针201P以外的测量候选探针201a、201b施加偏置电压时,经由测量候选探针对各偏置用端子152施加有偏置电压。由此,经由各测量候选探针而使所有偏置用端子152的电位成为等电位。如果测量探针201P与偏置用端子152适当地接触,则由电位测量电路212测量的测量探针201P中的电压成为与偏置电压大致相同。另一方面,如果测量探针201P未与偏置用端子152适当地接触,则由电位测量电路212测量的测量探针201P的电压不会成为与偏置电压等同的电压。如此,通过对各测量候选探针中的电压进行测量,从而能够检测测量候选探针是否与偏置端子适当地接触、即测量候选探针的位置是否有偏差。As described above, the bias terminals 152 (152L, 152R) in all the
在本实施方式中,在有源矩阵基板1中,隔着各接片15a的数据端子组的一组偏置用端子152L、152R作为事先检查中使用的检查用端子发挥功能。此外,在检查装置2中,将有源矩阵基板1中的与各检查用端子对应的探针201作为测量候选探针。近年来随着推进端子的窄间距化,探测的难易度也高涨。在本实施方式中,接片15a、15b中的各端子的间距也缩窄至约为70μm左右,但通过在成像检查前对各测量候选探针的电压进行测量从而能够提高探测的精度,能够防止重新进行成像检查。In the present embodiment, in the
此外,在本实施方式中,在事先检查中使用偏置用端子152,因此无需为了检查探针201是否与对应的端子适当地接触而另行设置检查用端子。此外,在本实施方式中,事先检查中使用的偏置用端子152具有和与该偏置用端子152相邻的其他端子大致等同的形状和大小,因此针对接片15a、15b的设计不易受到设计上的制约。In addition, in the present embodiment, since the
另外,在上述内容中,以相对于接片15a的探针组200为例进行了说明,但在检查装置2中,设有每接片15b的探针组200、和按照每探针组200设置有开关电路211a、211b。在该情况下,每个探针组200的开关电路211a与针对对应的接片15b中的一个偏置用端子152U(参照图5)而设置的探针201(测量候选探针)连接。此外,每个探针组200的开关电路211b与针对对应的接片15b中的一个偏置用端子152D而设置的探针201(测量候选探针)连接。检查装置2以与测量候选探针相对于接片15a的的电压测量的方法同样的方法,按顺序测量各测量候选探针相对于接片15b的的电压,并对各测量候选探针的接触状态进行检测。In addition, in the above description, the
[第二实施方式][Second Embodiment]
在上述的第一实施方式中,说明了在事先检查中,对各接片15a、15b中的两个偏置用端子152的每一个与对应的各测量候选探针的接触状态进行检测的示例。也就是说,说明了在接片15a、15b的每一个中,作为检查用端子而使用两个偏置用端子152,对与上述偏置用端子152对应的两个测量候选探针的接触状态进行检测的示例。在本实施方式中,在接片15a、15b的每一个中,作为检查用端子而使用一个偏置用端子152,对与该偏置用端子152对应的一个测量候选探针的接触状态进行检测。In the above-described first embodiment, an example of detecting the contact state between each of the two
图7为表示本实施方式中的有源矩阵基板1的一部分的接片15a和检查装置的概要构成的示意图。在图7中,对与第一实施方式相同的构成标注与第一实施方式相同的附图标记。以下,主要对与第一实施方式不同的构成进行说明。FIG. 7 is a schematic diagram showing a schematic configuration of a part of the
如图7所示,检查装置2A具备每接片15a的探针组200和测量电路210A。As shown in FIG. 7 , the
测量电路210A针对每个探针组200具备一个开关电路211a,开关电路211a与探针组200中的一个探针201a连接。与开关电路211a连接的探针201a为测量候选探针,并在事先检查中与接片15a中的一个偏置用端子152L接触。The
另外,虽在图7中未图示,但在每接片15b的探针组200中设置有一个测量候选探针201a,在事先检查中,测量候选探针201a与接片15b中的一个偏置用端子152接触。In addition, although not shown in FIG. 7 , one
如此,本实施方式的测量电路210A在未设置有开关电路211b这一点与第一实施方式的测量电路210不同。As described above, the
各测量候选探针201a中的电压的测量方法与第一实施方式相同。即,对各开关电路211a中的开关元件2111、2112的导通/截止进行控制,以便依次切换与电位测量电路212电连接的测量候选探针201a,并对测量探针201P依次进行切换。The method of measuring the voltage in each
如第一实施方式中说明那样,接片15a、15b中的偏置用端子152相互接线。因此,在由电位测量电路212测量的测量探针201P中的电压与偏置电压等同的情况下,测量探针201P与对应的偏置用端子152为适当地接触的状态。另一方面,在由电位测量电路212测量的电压不与偏置电压等同的情况下,测量探针201P与对应的偏置用端子152为未适当地接触的状态。As described in the first embodiment, the
如此,按照每接片15a、15b而将一个偏置用端子152用于事先检查,通过对测量候选探针相对于该偏置用端子152的的接触状态进行检测,从而能够在成像检查前确认各探针201的位置是否适当。In this way, one biasing
另外,在接片15a中事先检查中使用的偏置用端子152也可以是一个偏置用端子152R。也就是说,事先检查中使用的偏置用端子152只要是各接片15a的数据端子组或各接片15b的栅极端子组中的配置于两侧的一个端部的偏置用端子152即可。In addition, the
以上,对本发明的实施方式进行了说明,上述的实施方式只不过是用于实施本发明的例示。因此,本发明并不限定于上述的实施方式,在不脱离其主旨的范围内能够将上述的实施方式适当变形来实施。以下,对本发明的变形例进行说明。As mentioned above, although embodiment of this invention was described, the above-mentioned embodiment is only an illustration for implementing this invention. Therefore, the present invention is not limited to the above-described embodiment, and the above-described embodiment can be appropriately modified and implemented within a range that does not deviate from the gist. Hereinafter, a modification of the present invention will be described.
(1)在上述的实施方式中,说明了将偏置用端子152用于事先检查的示例,但例如也可以将针对接片15a、15b而设置的虚拟端子153中的至少一个用于事先检查。在该情况下,以事先检查中使用的虚拟端子153的电位成为相同电位的方式,将事先检查中使用的虚拟端子153之间进行接线。也就是说,只要在有源矩阵基板1上的接片15a的数据端子组或15b中的栅极端子组的两侧的一方配置有至少一个事先检查中使用的端子即可。(1) In the above-described embodiment, the example in which the
另外,在上述的实施方式中,说明了偏置用端子152也用于检查用端子,因此对各检查用端子施加有偏置电压的示例,但事先检查中使用的各检查用端子的电位为共用电位即可,例如也可以是规定的基准电位(GND)。In addition, in the above-mentioned embodiment, the
(2)在上述的实施方式中,说明了将接片15a与接片15b的偏置用端子152用于事先检查的示例,但只要在接片15a与接片15b中的至少一方的接片配置有至少一个事先检查中使用的检查用端子即可。(2) In the above-described embodiment, the example in which the
(3)在上述实施方式中,说明了设置闪烁体之前的有源矩阵基板,但也可以将上述的实施方式的结构应用于在有源矩阵基板的一方的面侧设置有闪烁体的X射线成像面板。另外,闪烁体配置于供X射线照射的有源矩阵基板的面侧。(3) In the above-described embodiment, the active matrix substrate before the scintillator is provided has been described, but the configuration of the above-described embodiment can also be applied to X-rays in which the scintillator is provided on one surface side of the active matrix substrate imaging panel. In addition, the scintillator is arranged on the surface side of the active matrix substrate for X-ray irradiation.
(4)在上述的实施方式中,以X射线的成像面板中使用的有源矩阵基板1为例进行了说明,但上述的接片15a、15b的结构也可以应用于显示面板中使用的有源矩阵基板。(4) In the above-mentioned embodiment, the
(5)在上述的实施方式中,数据线10、栅极线11的根数以及接片15a、15b的数量并不限定于上述数量。此外,在上述的实施方式中,只要在与数据线10和栅极线11中的至少一方的布线组连接的端子组中分散地配置有多个检查用端子即可。也就是说,多个检查用端子的每个检查用端子也可以相对于与该检查用端子的两侧相邻的一个或多个端子而设置,也可以相对于与该检查用端子的一侧相邻的一个或多个端子而设置。(5) In the above-mentioned embodiment, the number of the data lines 10, the gate lines 11, and the number of the
另外,一个检查用端子和与该检查用端子相邻的一个或多个端子的关系符合以下的任意的模式。In addition, the relationship between one terminal for inspection and one or more terminals adjacent to the terminal for inspection conforms to any of the following patterns.
(i)一个检查用端子针对与该检查用端子的两侧分别相邻的多个端子而设置。(i) One terminal for inspection is provided for a plurality of terminals adjacent to both sides of the terminal for inspection, respectively.
(ii)一个检查用端子针对与该检查用端子的两侧分别相邻的一个端子而设置。(ii) One terminal for inspection is provided for one terminal adjacent to each of both sides of the terminal for inspection.
(iii)一个检查用端子针对与该检查用端子的一侧相邻的一个端子而设置。(iii) One terminal for inspection is provided for one terminal adjacent to one side of the terminal for inspection.
(iv)一个检查用端子针对与该检查用端子的一侧相邻的多个端子而设置。(iv) One terminal for inspection is provided for a plurality of terminals adjacent to one side of the terminal for inspection.
(v)一个检查用端子针对与该检查用端子的一侧相邻的一个端子、和与该检查用端子的另一侧相邻的多个端子而设置。(v) One terminal for inspection is provided for one terminal adjacent to one side of the terminal for inspection and a plurality of terminals adjacent to the other side of the terminal for inspection.
综上所述,通过对一个检查用端子的电位进行测量,从而能够判断探针相对于与该检查用端子中的至少一侧相邻的一个或多个端子的位置是否适当。As described above, by measuring the potential of one terminal for inspection, it can be determined whether or not the position of the probe with respect to one or more terminals adjacent to at least one of the terminals for inspection is appropriate.
上述的有源矩阵基板与检查装置能够以如下方式进行说明。The above-described active matrix substrate and inspection apparatus can be described as follows.
有源矩阵基板具备:基板;多个栅极线,其在所述基板上沿一个方向排列;多个数据线,其在所述基板上以与所述多个栅极线交叉的方式排列;第一端子组,其排列有与所述多个栅极线的一个端部连接的多个端子;第二端子组,其排列有与所述多个数据线的一个端部连接的多个端子;以及多个检查用端子,其分散地配置于所述第一端子组与所述第二端子组中的至少一个端子组中的所述多个端子之间并相互接线(第一构成)。The active matrix substrate includes: a substrate; a plurality of gate lines arranged in one direction on the substrate; a plurality of data lines arranged on the substrate so as to intersect the plurality of gate lines; a first terminal group, which is arranged with a plurality of terminals connected to one end of the plurality of gate lines; a second terminal group, which is arranged with a plurality of terminals connected to one end of the plurality of data lines ; and a plurality of terminals for inspection, which are distributed among the plurality of terminals in at least one terminal group of the first terminal group and the second terminal group and are connected to each other (first configuration).
根据第一构成,有源矩阵基板具有:排列与各栅极线连接的各端子而形成的第一端子组、和排列与各数据线连接的各端子而形成的第二端子组。此外,有源矩阵基板具备分散地配置于至少一个端子组中的多个端子之间的多个检查用端子。多个检查用端子相互接线。According to the first configuration, the active matrix substrate includes the first terminal group formed by arranging the terminals connected to the gate lines, and the second terminal group formed by arranging the terminals connected to the data lines. In addition, the active matrix substrate includes a plurality of terminals for inspection that are distributed among the plurality of terminals in at least one terminal group. A plurality of terminals for inspection are wired to each other.
在有源矩阵基板的制造工序中,在进行是否对栅极线或数据线适当地施加电压等动作确认检查的情况下,使用于检查的探针接触第一端子组和第二端子组中的至少一个端子组。在上述构成中,分散地配置于至少一个端子组中的多个端子之间的多个检查用端子相互接线。如果检查用端子与探针适当地接触,则与多个检查用端子接触的多个探针的电位成为等电位。因此,通过对探针相对于检查用端子的电位进行检测,从而能够确认探针相对于至少一个端子组中的各端子的位置是否适当,能够适当地进行动作确认检查。此外,在上述构成中,在至少一个端子组中的多个端子之间分散地设置有检查用端子,因此与将多个端子的两端的端子进行接线而用于检查的情况相比,端子的设计的自由度提高。In the manufacturing process of the active matrix substrate, in the case of performing an operation confirmation inspection such as whether a voltage is properly applied to the gate lines or the data lines, the probes used for the inspection are brought into contact with the first terminal group and the second terminal group. At least one terminal group. In the above configuration, the plurality of terminals for inspection, which are distributed among the plurality of terminals in at least one terminal group, are connected to each other. When the terminals for inspection and the probes are properly brought into contact with each other, the potentials of the plurality of probes in contact with the plurality of terminals for inspection become equal potentials. Therefore, by detecting the potential of the probe with respect to the terminal for inspection, it can be confirmed whether the position of the probe with respect to each terminal in at least one terminal group is appropriate, and the operation confirmation inspection can be performed appropriately. In addition, in the above-mentioned configuration, since the terminals for inspection are distributed among the plurality of terminals in at least one terminal group, compared with the case where the terminals at both ends of the plurality of terminals are connected for inspection, the The degree of freedom of design is improved.
在第一构成中,也可以采用如下方式:所述多个检查用端子的每一个针对与该检查用端子相邻的一个或多个端子而设置(第二构成)。In the first configuration, each of the plurality of terminals for inspection may be provided for one or a plurality of terminals adjacent to the terminal for inspection (second configuration).
根据第二构成,通过对与检查用端子接触的探针的电位进行检测,从而能够判断与该检查用端子相邻的一个或多个端子和对应的探针是否适当地接触。According to the second configuration, by detecting the potential of the probe in contact with the inspection terminal, it can be determined whether or not one or more terminals adjacent to the inspection terminal and the corresponding probe are properly contacted.
在第一或第二构成中,也可以采用如下方式:具备:多个光电转换元件,其配置于由所述多个栅极线和所述多个数据线限定的多个像素的每一个像素;以及偏置布线,其向所述多个光电转换元件的每个光电转换元件供给偏置电压,各检查用端子与所述偏置布线连接(第三构成)。In the first or second configuration, a plurality of photoelectric conversion elements may be provided in each of a plurality of pixels defined by the plurality of gate lines and the plurality of data lines. and a bias wiring for supplying a bias voltage to each of the plurality of photoelectric conversion elements, and each terminal for inspection is connected to the bias wiring (third configuration).
根据第三构成,各检查用端子与偏置布线连接,因此还能够使各检查用端子作为用于向各像素的光电转换元件施加偏置电压的端子发挥功能。According to the third configuration, since each inspection terminal is connected to the bias wiring, each inspection terminal can also function as a terminal for applying a bias voltage to the photoelectric conversion element of each pixel.
在第二或第三构成中,也可以采用如下方式:所述多个检查用端子的每一个的形状以及大小等同于与该检查用端子相邻的一个或多个端子的形状以及大小(第四构成)。In the second or third configuration, the shape and size of each of the plurality of terminals for inspection may be equal to the shape and size of one or more terminals adjacent to the terminal for inspection (No. four components).
根据第四构成,同检查用端子的形状以及大小和与该检查用端子相邻的一个或多个端子的形状以及大小不同的情况相比,易于设计供端子形成的区域。According to the fourth configuration, compared with the case where the shape and size of the inspection terminal are different from the shape and size of one or more terminals adjacent to the inspection terminal, it is easier to design the area where the terminal is formed.
检查装置具备:多个第一探针,其与第一至第四中的任意的构成的有源矩阵基板中的所述多个检查用端子的每个检查用端子对应地设置;多个第二探针,其与所述有源矩阵基板中的所述至少一个端子组中的多个端子的每个端子对应地设置;以及测量电路,其与所述多个第一探针连接,所述测量电路对所述多个第一探针中的、一个第一探针以外的其他第一探针施加规定电压,对该一个第一探针中的电压进行检测(第五构成)。The inspection apparatus includes: a plurality of first probes provided corresponding to each of the plurality of inspection terminals in the active matrix substrate having any of the first to fourth configurations; a plurality of first probes Two probes, which are provided corresponding to each terminal of the plurality of terminals in the at least one terminal group in the active matrix substrate; and a measurement circuit, which is connected with the plurality of first probes, so that the The measurement circuit applies a predetermined voltage to the other first probes other than one of the plurality of first probes, and detects the voltage in the one first probe (fifth configuration).
根据第五构成,在检查装置中,针对有源矩阵基板上的每个检查用端子设置第一探针,针对有源矩阵基板上的第一端子组与第二端子组中的至少一个端子组的每个端子设置第二探针。在各第一探针与对应的各端子适当地接触的情况下,所有第一探针中的电压成为等同。因此,能够根据第一探针中的电压的检测结果,来调节第一探针以及第二探针的位置,能够适当地进行动作确认检查。According to the fifth configuration, in the inspection apparatus, the first probe is provided for each inspection terminal on the active matrix substrate, and the first probe is provided for at least one of the first terminal group and the second terminal group on the active matrix substrate. Each terminal is provided with a second probe. When the respective first probes are properly in contact with the corresponding terminals, the voltages in all the first probes become equal. Therefore, the positions of the first probe and the second probe can be adjusted according to the detection result of the voltage in the first probe, and the operation confirmation inspection can be appropriately performed.
附图标记说明Description of reference numerals
1…有源矩阵基板;2…检查装置;10…数据线;11…栅极线;13…偏置布线;15a、15b…接片;16a、16b、16c、26a、26c…保护电路部;17a、17b、27a…共用布线;21…TFT;22…光电转换元件;151…数据端子;152、152L、152R、152U、152D…偏置用端子;153、153L、153R、153U、153D…虚拟端子;154…栅极端子;200…探针组;201…探针;211a、211b…开关电路;212…电位测量电路;213…电源;2111、2112…开关元件。1...active matrix substrate; 2...inspection device; 10...data line; 11...gate line; 13...bias wiring; 17a, 17b, 27a...common wiring; 21...TFT; 22...photoelectric conversion element; 151...data terminal; 152, 152L, 152R, 152U, 152D...bias terminal; 154...gate terminal; 200...probe group; 201...probes; 211a, 211b...switching circuit; 212...potential measuring circuit; 213...power supply;
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KR20070076843A (en) * | 2006-01-20 | 2007-07-25 | 삼성전자주식회사 | Thin film transistor substrate and its inspection method |
JP2008102335A (en) * | 2006-10-19 | 2008-05-01 | Seiko Epson Corp | Active matrix substrate, electro-optical device, inspection method, and electro-optical device manufacturing method |
US20100309421A1 (en) * | 2009-06-03 | 2010-12-09 | Hitachi Displays, Ltd. | Display device |
JP2012220851A (en) * | 2011-04-12 | 2012-11-12 | Panasonic Corp | Active matrix substrate, method for inspecting active matrix substrate, display panel, and method for manufacturing display panel |
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KR20070076843A (en) * | 2006-01-20 | 2007-07-25 | 삼성전자주식회사 | Thin film transistor substrate and its inspection method |
JP2008102335A (en) * | 2006-10-19 | 2008-05-01 | Seiko Epson Corp | Active matrix substrate, electro-optical device, inspection method, and electro-optical device manufacturing method |
US20100309421A1 (en) * | 2009-06-03 | 2010-12-09 | Hitachi Displays, Ltd. | Display device |
JP2012220851A (en) * | 2011-04-12 | 2012-11-12 | Panasonic Corp | Active matrix substrate, method for inspecting active matrix substrate, display panel, and method for manufacturing display panel |
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