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CN111506148B - A power supply circuit with sensitivity temperature drift compensation function of magnetoresistive sensor device - Google Patents

A power supply circuit with sensitivity temperature drift compensation function of magnetoresistive sensor device Download PDF

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CN111506148B
CN111506148B CN202010409827.3A CN202010409827A CN111506148B CN 111506148 B CN111506148 B CN 111506148B CN 202010409827 A CN202010409827 A CN 202010409827A CN 111506148 B CN111506148 B CN 111506148B
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temperature
voltage
power supply
circuit
sensing device
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CN111506148A (en
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朱华辰
李婉婉
钱正洪
王志强
朱建国
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Sichuan University
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

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Abstract

本发明涉及一种具有磁电阻传感器件灵敏度温漂补偿功能的电源电路。磁电阻传感器件的灵敏度具有负的线性温度系数。本发明包含温度检测电路，与温度无关的电压基准，运算电路和线性稳压电源电路。针对灵敏度温度系数为‑CT的磁电阻传感器件，通过调整运算电路的运算系数x，可以获得温度系数为CT的正温度系数电源。该电源电路作为磁电阻传感器件的供电电源，可以显著降低磁电阻传感器件灵敏度的温度漂移情况。

Figure 202010409827

The invention relates to a power supply circuit with the function of compensating the sensitivity and temperature drift of a magnetoresistive sensing device. The sensitivity of the magnetoresistive sensing device has a negative linear temperature coefficient. The invention includes a temperature detection circuit, a temperature-independent voltage reference, an arithmetic circuit and a linear regulated power supply circuit. For a magnetoresistive sensing device with a sensitivity temperature coefficient of -C T , a positive temperature coefficient power supply with a temperature coefficient of C T can be obtained by adjusting the operation coefficient x of the operation circuit. The power supply circuit is used as the power supply of the magnetoresistive sensing device, which can significantly reduce the temperature drift of the sensitivity of the magnetoresistive sensing device.

Figure 202010409827

Description

Power supply circuit with magneto-resistance sensing device sensitivity temperature drift compensation function
Technical Field
The invention belongs to the field of sensor signal conditioning circuits, and relates to a power supply circuit with a magneto-resistance sensing device sensitivity temperature drift compensation function.
Background
The magnetoresistance sensing device prepared based on giant magnetoresistance effect, anisotropic magnetoresistance effect or tunneling magnetoresistance effect is widely applied to various magnetic field detection fields due to high sensitivity and resolution. However, in practical applications, it has been found that the sensitivity of the magnetoresistive sensing devices decreases significantly with increasing temperature. Taking a giant magnetoresistive sensing device as an example, the temperature drift coefficient of its sensitivity is about-0.25%/° C. For application scenes with large environmental temperature change, such as the fields of automobile electronics, industrial control and the like, the temperature change range is generally-40 ℃ to 125 ℃, and the deviation of the sensitivity of the sensing device relative to the room temperature (25 ℃) reaches 25%. If the temperature drift is not compensated, the accuracy of analyzing the output signal of the magneto-resistance sensing device is obviously influenced.
Disclosure of Invention
The invention provides a power circuit scheme with a temperature drift compensation function aiming at the sensitivity temperature drift phenomenon of a magneto-resistance sensing device.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a power supply circuit with the sensitivity temperature drift compensation function of a magneto-resistance sensing device comprises a temperature detection circuit, a voltage reference irrelevant to temperature, an arithmetic circuit and a linear voltage-stabilized power supply circuit;
the temperature detection circuit is used for generating a voltage signal related to the ambient temperature and inputting the voltage signal to one end of the operation circuit;
the voltage reference irrelevant to the temperature is used for generating a voltage signal irrelevant to the temperature and inputting the voltage signal to the other end of the operation circuit;
the input end of the operation circuit is respectively connected to the temperature detection circuit and a voltage reference irrelevant to temperature and used for generating two voltage signals after voltage operation;
the linear voltage-stabilized power supply circuit is provided with a reference signal input end, and the voltage of the output end of the linear voltage-stabilized power supply circuit is in direct proportion to the voltage of the reference signal;
the output of the linear voltage-stabilized power supply circuit provides power supply voltage for the magneto-resistance sensing device;
furthermore, the magneto-resistance sensing device is a sensing device which is prepared based on one of giant magneto-resistance effect, anisotropic magneto-resistance effect or tunneling magneto-resistance effect and has a Wheatstone bridge structure; for an external magnetic field of strength B and a supply voltage VDDOf output voltage V thereofoutThe following functional relationship exists with the sensitivity S and the temperature T:
Figure 720684DEST_PATH_IMAGE001
。
wherein S is0Is the sensitivity of the magnetoresistive sensing device at 25 ℃;
CTis the temperature coefficient of the sensitivity of the magnetoresistive sensing device;
the temperature detection mode of the temperature detection circuit is based on one or a combination of several principles of a semiconductor PN junction, a negative temperature coefficient resistor and a thermocouple; the circuit generates a voltage signal V related to the ambient temperatureaWith the ambient temperature T, the following functional relationship exists:
Figure 637825DEST_PATH_IMAGE002
wherein, Va0Is the output voltage of the temperature detection circuit at 25 ℃;
C' Ta temperature coefficient of an output voltage for the temperature detection circuit;
the voltage signal V after operation output by the operation circuitcWith the voltage signal V output by the temperature detection circuitaAnd a temperature independent voltage reference output voltage signal VbThe following functional relationship exists:
Figure 89666DEST_PATH_IMAGE003
wherein x is an operation coefficient and is determined by a designed operation circuit;
voltage signal V to be correlated with ambient temperatureaAfter the relation function with the ambient temperature T is substituted and arranged, the following relation can be obtained:
Figure 484875DEST_PATH_IMAGE004
the output voltage V of the linear voltage-stabilized power supply circuitcalOutput voltage signal V of AND operation circuitcThe following functional relationship exists:
Figure 971351DEST_PATH_IMAGE005
y is a proportionality coefficient of the output voltage of the linear stabilized voltage supply relative to the input voltage of the reference signal;
furthermore, the arithmetic circuit can lead the temperature coefficient C of the sensitivity of the magneto-resistance sensing device to be higher than the temperature coefficient C by reasonably designing the arithmetic coefficient xTTemperature coefficient C of output voltage of temperature detection circuit' TThe following relationship is satisfied:
Figure 793814DEST_PATH_IMAGE006
at this time, the output voltage V of the linear regulated power supplycalWith temperature T, there is a functional relationship as follows:
Figure 467372DEST_PATH_IMAGE007
wherein, Vcal0Represents the output voltage of the linear voltage-stabilized power supply circuit at 25 ℃.
When the power supply circuit is applied to the magnetoresistive sensing device, the output signal of the sensing device becomes, for a specific magnetic field B:
Figure 666272DEST_PATH_IMAGE008
the invention has the beneficial effects that: after the invention is applied to a magneto-resistor sensing device, the relative maximum deviation of output signals of the sensing device can be from 100 ℃ within the temperature range of-40 ℃ to 125 ℃ through reasonably designing the operational coefficient xTBecome (100C)T）2. Due to CT< 1%, the deviation is significantly reduced compared to the raw output signal of the sensor.
Drawings
Fig. 1 is a schematic diagram of the circuit of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
The power circuit with the sensitivity temperature drift compensation function of the magneto-resistance sensing device is shown in figure 1. The circuit consists of a temperature detection circuit 101, a voltage reference 102 independent of temperature, an arithmetic circuit 103 and a linear stabilized voltage power supply circuit 104.
The temperature detection circuit 101 detects the ambient temperature and generates a voltage signal related to the ambient temperature;
the temperature independent voltage reference 102 generates a temperature independent voltage signal;
the two signals are input to the arithmetic circuit 103 for operation and then output to the reference signal input end of the linear voltage-stabilized power supply circuit 104;
the linear voltage-stabilized power supply 104 outputs a power supply voltage proportional to the reference signal as a power supply of the magneto-resistance sensing device;
according to the design method of the operational coefficient x described in the invention, the temperature coefficient-C for the magneto-resistance sensing deviceTA temperature coefficient of C can be obtainedTThe power supply voltage of (2) is applied to the sensor to realize the compensation effect.
Taking a giant magnetoresistance sensing device with a temperature coefficient of-0.25%/° C as an example, the relative deviation of the sensing device at 125 ℃ before compensation is 25%; after compensation, the relative deviation at 125 ℃ is reduced to 6.25 percent
According to the above description, the circuit of the invention has the function of supplying power to the magnetoresistive sensing device, and achieves the effect of compensating for the sensitivity temperature drift of the sensing device.

Claims (3)

1.一种具有磁电阻传感器件灵敏度温漂补偿功能的电源电路，其特征在于：1. a power supply circuit with the sensitivity temperature drift compensation function of a magnetoresistive sensor device, characterized in that: 包含温度检测电路，与温度无关的电压基准，运算电路和线性稳压电源电路；Including temperature detection circuit, temperature-independent voltage reference, operation circuit and linear regulated power supply circuit; 所述温度检测电路，用于产生与环境温度相关的电压信号，输入至运算电路一端；The temperature detection circuit is used to generate a voltage signal related to the ambient temperature and input it to one end of the operation circuit; 所述与温度无关的电压基准，用于产生与温度无关的电压信号，输入至运算电路的另一端；the temperature-independent voltage reference is used to generate a temperature-independent voltage signal, which is input to the other end of the operation circuit; 所述运算电路，其输入端分别连接至温度检测电路和与温度无关的电压基准，用于产生两个电压运算后的电压信号；The input ends of the operation circuit are respectively connected to the temperature detection circuit and the temperature-independent voltage reference, and are used for generating two voltage signals after voltage operation; 所述线性稳压电源电路，具有一个参考信号输入端，其输出端的电压正比于参考信号的电压；The linear regulated power supply circuit has a reference signal input terminal, and the voltage of the output terminal is proportional to the voltage of the reference signal; 所述线性稳压电源电路的输出，为磁电阻传感器件提供电源电压；The output of the linear regulated power supply circuit provides the power supply voltage for the magnetoresistive sensing device; 所述磁电阻传感器件，指的是基于巨磁电阻效应、各向异性磁电阻效应或隧穿磁电阻效应之一制备而成的，具有惠斯通电桥结构的传感器件；The magnetoresistive sensor device refers to a sensor device with a Wheatstone bridge structure prepared based on one of giant magnetoresistance effect, anisotropic magnetoresistance effect or tunneling magnetoresistance effect; 所述磁电阻传感器件，针对磁场B和电源电压VDD，其输出电压Vout与灵敏度S及温度T，存在下述函数关系：The magnetoresistive sensing device has the following functional relationship with respect to the magnetic field B and the power supply voltage V DD , the output voltage V out , the sensitivity S and the temperature T:
Figure DEST_PATH_IMAGE002
Figure DEST_PATH_IMAGE002
 其中，S0是磁电阻传感器件在25°C时的灵敏度；where S 0 is the sensitivity of the magnetoresistive sensing device at 25°C; CT是磁电阻传感器件灵敏度的温度系数；C T is the temperature coefficient of the sensitivity of the magnetoresistive sensing device; 所述运算电路输出的运算后的电压信号Vc与温度检测电路输出的电压信号Va以及与温度无关的电压基准输出电压信号Vb，存在下述函数关系：The calculated voltage signal V c output by the operation circuit, the voltage signal Va output by the temperature detection circuit and the temperature-independent voltage reference output voltage signal V b have the following functional relationship:
Figure DEST_PATH_IMAGE004
Figure DEST_PATH_IMAGE004
 其中，x为运算系数，由所设计的运算电路确定；Among them, x is the operation coefficient, which is determined by the designed operation circuit; 将与环境温度相关的电压信号Va与环境温度T的关系函数代入：Substitute the relationship function between the voltage signal Va related to the ambient temperature and the ambient temperature T into: 其中，所述温度检测电路产生的与环境温度相关的电压信号Va与环境温度T，存在下述函数关系：Wherein, the voltage signal Va related to the ambient temperature generated by the temperature detection circuit and the ambient temperature T have the following functional relationship:
Figure DEST_PATH_IMAGE006
Figure DEST_PATH_IMAGE006
 其中，Va0是该温度检测电路在25°C时的输出电压；Among them, V a0 is the output voltage of the temperature detection circuit at 25°C; C' T为该温度检测电路输出电压的温度系数；C ' T is the temperature coefficient of the output voltage of the temperature detection circuit; 整理后，可以得到如下关系式：After sorting, the following relationship can be obtained:
Figure DEST_PATH_IMAGE008
；（1）
Figure DEST_PATH_IMAGE008
;(1) 当所述运算电路的运算系数x被设计为满足等式（1）时，所述线性稳压电源的输出电压Vcal与温度T，存在如下函数关系：When the operation coefficient x of the operation circuit is designed to satisfy the equation (1), the output voltage V cal of the linear regulated power supply and the temperature T have the following functional relationship: 其中，所述线性稳压电源电路的输出电压Vcal与运算电路的输出电压信号Vc，存在下述函数关系：Wherein, the output voltage V cal of the linear regulated power supply circuit and the output voltage signal V c of the arithmetic circuit have the following functional relationship:
Figure DEST_PATH_IMAGE010
；
Figure DEST_PATH_IMAGE012
Figure DEST_PATH_IMAGE010
;
Figure DEST_PATH_IMAGE012
 其中，y为线性稳压电源输出电压相对于参考信号输入端电压的比例系数，Vcal0表示所述线性稳压电源电路在25°C时的输出电压；Wherein, y is the proportional coefficient of the output voltage of the linear regulated power supply with respect to the voltage at the input terminal of the reference signal, and V cal0 represents the output voltage of the linear regulated power supply circuit at 25°C; 当该电源电路作用于磁电阻传感器件后，在针对磁场B，磁电阻传感器件的输出信号变为：When the power circuit acts on the magnetoresistive sensing device, for the magnetic field B, the output signal of the magnetoresistive sensing device becomes:
Figure DEST_PATH_IMAGE014
。
Figure DEST_PATH_IMAGE014
. 2.如权利要求1所述的一种具有磁电阻传感器件灵敏度温漂补偿功能的电源电路，其特征在于：2. A kind of power supply circuit with the function of compensating the sensitivity temperature drift of the magnetoresistive sensor device as claimed in claim 1, it is characterized in that: 所述温度检测电路，其温度检测方式是基于半导体PN结、负温度系数电阻及热电偶中的一种或几种原理的组合。The temperature detection circuit of the temperature detection circuit is based on one or a combination of several principles among semiconductor PN junctions, negative temperature coefficient resistors and thermocouples. 3.如权利要求1所述的一种具有磁电阻传感器件灵敏度温漂补偿功能的电源电路，其特征在于：3. A kind of power supply circuit with the function of compensating the sensitivity temperature drift of the magnetoresistive sensor device as claimed in claim 1, it is characterized in that: 所述运算电路，通过合理的设计运算系数x，可以使得磁电阻传感器件灵敏度的温度系数CT与温度检测电路输出电压的温度系数C' T，满足下述关系：The operation circuit, through a reasonable design of the operation coefficient x, can make the temperature coefficient C T of the sensitivity of the magnetoresistive sensing device and the temperature coefficient C ' T of the output voltage of the temperature detection circuit to satisfy the following relationship:
Figure DEST_PATH_IMAGE016
。
Figure DEST_PATH_IMAGE016
.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101086450A (en) * 2006-06-08 2007-12-12 敦赞有限公司 Pedometer using magnetic sensor and measuring method
CN203824695U (en) * 2014-03-26 2014-09-10 南京信息工程大学 Apparatus for inhibiting sensitivity thermal drift and noise of silicon nanowire giant piezoresistive sensor
CN107014401A (en) * 2016-11-18 2017-08-04 清华四川能源互联网研究院 A kind of magnetoresistive transducer temperature compensation means
CN109579880A (en) * 2018-12-26 2019-04-05 上海英威腾工业技术有限公司 Magnetic coder with adaptive equalization function
CN110455319A (en) * 2019-09-10 2019-11-15 无锡乐尔科技有限公司 XMR Sensor Temperature Compensation circuit and compensation method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759892B2 (en) * 2002-03-25 2004-07-06 Texas Instruments Incorporated Temperature compensation trim method
JP4587708B2 (en) * 2004-05-20 2010-11-24 コニカミノルタオプト株式会社 Position detection device, camera shake correction mechanism, and imaging device
CN206038743U (en) * 2016-08-05 2017-03-22 江苏多维科技有限公司 Single -chip magneto resistor current sensor
CN110376397B (en) * 2019-08-15 2021-04-16 杭州电子科技大学 High-precision fast speed measuring circuit of single-phase asynchronous alternating-current speed measuring generator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101086450A (en) * 2006-06-08 2007-12-12 敦赞有限公司 Pedometer using magnetic sensor and measuring method
CN203824695U (en) * 2014-03-26 2014-09-10 南京信息工程大学 Apparatus for inhibiting sensitivity thermal drift and noise of silicon nanowire giant piezoresistive sensor
CN107014401A (en) * 2016-11-18 2017-08-04 清华四川能源互联网研究院 A kind of magnetoresistive transducer temperature compensation means
CN109579880A (en) * 2018-12-26 2019-04-05 上海英威腾工业技术有限公司 Magnetic coder with adaptive equalization function
CN110455319A (en) * 2019-09-10 2019-11-15 无锡乐尔科技有限公司 XMR Sensor Temperature Compensation circuit and compensation method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Temperature compensation strategy of output torque for permanent magnet synchronous motor based on BP neural network;Ma, ZL等;《PROCEEDINGS OF THE 2017 12TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA)》;20171231;774-779 *
先进磁电子材料和器件;钱正洪等;《仪表技术与传感器》;20091015;96-101 *

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