CN111491435A - A Non-Jet Atmospheric Pressure Thermal Plasma Generator - Google Patents
A Non-Jet Atmospheric Pressure Thermal Plasma Generator Download PDFInfo
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技术领域technical field
本发明涉及到微波等离子体技术领域,尤其涉及一种非射流的常压热等离子发生器。The invention relates to the technical field of microwave plasma, in particular to a non-jet normal pressure thermal plasma generator.
背景技术Background technique
等离子体是物质存在的第四种状态,通常是指电离也有可能是部分电离的导电气体,其中包括六种典型粒子:即电子、正离子、负离子、激发态的原子或分子、基态的原子或分子以及光子。无论是部分电离还是完全电离;其中的负电荷总数等于正电荷总数,所以叫等离子体,在宏观尺度的时间和空间范围里整体上呈电中性。比较严格的定义是:等离子体是由电子、正离子和中性粒子组成的整体上呈电中性的物质集合。等离子体按温度分为:高温等离子体和低温等离子体两大类。高温等离子体是温度在108-109K之间完全电离的等离子体:如太阳、恒星、核聚变等离子体。而低温等离子体又进一步地被划分为热等离子体和冷等离子体。热等离子体,存在的环境压力较高,在1个大气压及以上,温度范围为103-105K,而且电子温度与气体温度大致相等,因此又被称为“平衡等离子体”,如常压电弧放电等离子体、高频感应等离子体和燃烧等离子体;冷等离子体,通常存在于低压或常压下,虽然电子温度范围仍高达103-104K,但气体平均温度范围低至300-400K,电子温度远高于气体温度,因此又被称为“非平衡等离子体”,如低气压下的直流辉光放电或高频感应辉光放电等离子体。Plasma is the fourth state of existence of matter, usually refers to ionized or partially ionized conductive gas, which includes six typical particles: electrons, positive ions, negative ions, excited atoms or molecules, ground state atoms or molecules and photons. Whether it is partially ionized or fully ionized; the total number of negative charges is equal to the total number of positive charges, so it is called plasma, and it is generally electrically neutral in time and space at the macroscopic scale. The stricter definition is: Plasma is a collection of electrons, positive ions and neutral particles that are electrically neutral as a whole. Plasma is divided into two categories according to temperature: high temperature plasma and low temperature plasma. High-temperature plasmas are fully ionized plasmas with a temperature between 10 8 -10 9 K: such as solar, stellar, nuclear fusion plasmas. The low temperature plasma is further divided into hot plasma and cold plasma. Thermal plasma, the existence of high ambient pressure, at 1 atmosphere and above, the temperature range is 10 3 -10 5 K, and the electron temperature is roughly equal to the gas temperature, so it is also called "equilibrium plasma", as usual Piezoelectric arc discharge plasmas, high frequency induction plasmas, and combustion plasmas; cold plasmas, usually at low or atmospheric pressure, although the electron temperature range is still as high as 10 3 -10 4 K, the gas average temperature range is as low as 300 -400K, the electron temperature is much higher than the gas temperature, so it is also called "non-equilibrium plasma", such as DC glow discharge under low pressure or high frequency induced glow discharge plasma.
等离子体具有独特的物理、化学性质:具有类似金属的导电性能,且整体呈电中性、可受磁场作用;温度高,粒子动能大;化学性质活泼,容易发生化学反应;独特的发光特性等。等离子体拥有这些特性的根本原因可以归结为电子和气体分子间的碰撞、激发、离解、电离产生带有未成对电子的化学活性物种或基团。正是由于其光学、电学、力学、热学、化学等方面独特的性质,等离子体技术才成为一门新兴技术而得到广泛的应用。由于含有足够数量的自由带电粒子,其行为明显地受到电磁力影响,而总体上又呈现出电中性的非凝聚系统。等离子体具有一切电磁特性,其行为在很多方面不同于一般固体、液体、气体。主要特性是:粒子之间存在着长程库仑力相互作用,其运动与电磁场运动紧密耦合存在着丰富的集体效应和集体运动模式。Plasma has unique physical and chemical properties: it has electrical conductivity similar to metal, and the whole is electrically neutral and can be affected by magnetic fields; high temperature, large kinetic energy of particles; active chemical properties, easy to occur chemical reactions; unique luminescence characteristics, etc. . The fundamental reason why plasma possesses these properties can be attributed to the collision, excitation, dissociation, and ionization between electrons and gas molecules to produce chemically active species or groups with unpaired electrons. It is precisely because of its unique properties in optics, electricity, mechanics, heat and chemistry that plasma technology has become an emerging technology and has been widely used. Due to the presence of a sufficient number of free charged particles, its behavior is significantly affected by the electromagnetic force, and overall it presents an electrically neutral, non-condensed system. Plasma has all electromagnetic properties, and its behavior differs from ordinary solids, liquids, and gases in many ways. The main characteristics are: there is long-range Coulomb force interaction between particles, and their motions are closely coupled with electromagnetic field motions, and there are abundant collective effects and collective motion patterns.
通常高温等离子体并不包含在常规工业应用领域及相关的研究范围内,而低温等离子则在该领域具有更广泛的应用和应用价值。在低温等离子范畴内,传统理论认为,化学反应需要的等离子体应该是电子温度远高于气体温度的非平衡态等离子,即低温冷等离子,认为这样可以把外加场的能量交给电子而不使反应气体平均能量升高,表现为低平均温度。但在实际的应用中,在冷等离子体中进行的化学反应的过程与相同温度下的传统反应是有很大区别的,而且并不一定是有利的。因为冷等离子体表现出的低温只是一个平均的概念,其内存在局部高温或者部分高温粒子,所以此时的低温恰好是温度极不均匀的一种表现;此时不均匀会使大部分反应物处于低温区,且远低于平均温度,可能会影响反应率及反应速度;而且局部的高温可能会导致部分反应物发生不可逆破坏,产生大量非预期的副产物,影响利用率和得率。而热等离子体能够提供一个能量高度集中、温度很高且富含高活性粒子的反应环境。处于激发状态的大量高活性电子、离子、原子、分子可促使很多化学反应发生,不仅有助于大幅度提高反应速率,而且使一些常温下不可能发生的化学反应成为可能。而且理想中的热等离子体电子温度与气体温度大致相等,只要控制好气体温度并与化学反应需要的温度相适合,就能得到很好的反应效果。虽然热等离子体具备了促进化学反应的理论条件,但目前常见的常压热等离子装置通常只能产生高速射流状态的等离子体炬,如:直流等离子炬、高频等离子炬等类型。这些装置产生的等离子体受装置和物理条件限制:等离子体都产生并存在于能量密度极高的区域,呈高度集中的状态,等离子集中区域范围小且温度极高,为了防止上述等离子体扩散高温对装置的影响或者破坏,只能以射流的形式通入大量低温辅助气体对等离子体进行约束、并定向吹出,从而形成等离子体射流。为达到上述目的,若将待处理气体作为辅助气体通入等离子,其流量必然远大于等离子体流量,将有70%-90%的气体不会通过等离子体内部、不会受到充分加热或者等离子化;若以其它气体作为辅助气体将等离子吹出并送入待处理气体,将向整个处理体系中引入大量无用气体,效果会更差。因此在射流等离子体炬装置中,难以保证待处理气体充分通过等离子体存在的区域,难以保证待处理气体受到充分加热或者等离子体化,从而影响了实际的反应效果。而且集中高温还存在极大的散热困难的问题,容易导致构成装置的自身材料熔融、气化、等离子化,向反应体系中引入杂质,甚至损坏设备。Usually high temperature plasma is not included in the field of conventional industrial applications and related research, while low temperature plasma has wider application and application value in this field. In the category of low temperature plasma, the traditional theory holds that the plasma required for chemical reaction should be a non-equilibrium plasma whose electron temperature is much higher than the gas temperature, that is, low temperature cold plasma. The average energy of the reacting gas increases, which manifests as a low average temperature. But in practical applications, the process of chemical reactions carried out in cold plasma is very different from conventional reactions at the same temperature, and it is not necessarily favorable. Because the low temperature exhibited by cold plasma is only an average concept, and there are local high temperature or some high temperature particles in it, the low temperature at this time is just a manifestation of extremely uneven temperature; at this time, the unevenness will cause most of the reactants Being in the low temperature region and far below the average temperature may affect the reaction rate and reaction speed; and the local high temperature may cause irreversible destruction of some reactants, resulting in a large number of unexpected by-products, affecting the utilization rate and yield. Thermal plasma, on the other hand, can provide a reaction environment that is highly concentrated in energy, high temperature and rich in highly reactive particles. A large number of highly active electrons, ions, atoms, and molecules in the excited state can promote many chemical reactions, which not only help to greatly improve the reaction rate, but also make some chemical reactions impossible at normal temperature possible. Moreover, the ideal thermal plasma electron temperature is roughly equal to the gas temperature. As long as the gas temperature is well controlled and suitable for the temperature required by the chemical reaction, a good reaction effect can be obtained. Although thermal plasma has the theoretical conditions to promote chemical reactions, the current common atmospheric thermal plasma devices usually only produce high-speed jet plasma torches, such as DC plasma torches and high-frequency plasma torches. The plasma generated by these devices is limited by the device and physical conditions: the plasma is generated and exists in an area with extremely high energy density, in a highly concentrated state, the plasma concentration area is small and the temperature is extremely high, in order to prevent the above-mentioned plasma diffusion high temperature If the device is affected or destroyed, a large amount of low-temperature auxiliary gas can only be introduced in the form of a jet to confine the plasma and blow it out in a directional manner, thereby forming a plasma jet. In order to achieve the above purpose, if the gas to be treated is passed into the plasma as an auxiliary gas, its flow rate must be much larger than the plasma flow rate, and 70%-90% of the gas will not pass through the plasma, and will not be fully heated or plasmaized. ; If other gas is used as auxiliary gas to blow out the plasma and send it into the gas to be treated, a large amount of useless gas will be introduced into the whole treatment system, and the effect will be worse. Therefore, in the jet plasma torch device, it is difficult to ensure that the gas to be treated can fully pass through the region where the plasma exists, and it is difficult to ensure that the gas to be treated is fully heated or plasmaized, thereby affecting the actual reaction effect. In addition, there is a problem of great difficulty in dissipating heat due to concentrated high temperature, which can easily lead to the melting, gasification, and plasmaization of the materials constituting the device, introducing impurities into the reaction system, and even damaging the equipment.
理论上微波也可以形成等离子体,根据帕邢定律以及帕邢曲线可知:常压气体需要很高的电场强度才能击穿形成等离子体;而微波作为一种电磁波可以在空间形成交变电场和磁场,只要单位空间中的微波功率,即微波功率密度,达到足够强度,空间交变电场就会达到足够强度,就能使常压气体击穿形成等离子体。但是,普通低微波功率密度的微波装置中电场强度较弱,而且其分布也是动态、不均匀地,难以形成等离子体,即使形成也会由于使微波功率密度分布产生巨大变化,使等离子体无法得到稳定的能量,能量的迁移以及等离子体、气体热对流都会使等离子体发生在微波装置内部四处漂移,极易漂散熄灭或者漂移到微波馈口附近,由于微波馈口与微波源之间的微波功率密度比腔体高很多,最终形成破坏性击穿放电。在这类装置中加大微波功率密度,理论上可使等离子体放大、稳定下来,但事实上由于此时微波馈口功率密度更高,再加上等离子体的体积变大更容易漂移到微波馈口附近,必然形成破坏性击穿放电。这样一来就无法在普通的微波装置中形成稳定的常压热等离子体。In theory, microwaves can also form plasma. According to Paschen's law and Paschen curve, it can be known that atmospheric pressure gas needs a high electric field strength to break down to form plasma; and microwave, as an electromagnetic wave, can form alternating electric and magnetic fields in space , as long as the microwave power in the unit space, that is, the microwave power density, reaches a sufficient intensity, the space alternating electric field will reach a sufficient intensity, and the atmospheric gas can be broken down to form a plasma. However, in ordinary microwave devices with low microwave power density, the electric field strength is weak, and its distribution is also dynamic and non-uniform, making it difficult to form plasma. Stable energy, energy migration, and thermal convection of plasma and gas will cause the plasma to drift around inside the microwave device, and it is very easy to drift out or drift to the vicinity of the microwave feed. The power density is much higher than that of the cavity, resulting in a destructive breakdown discharge. Increasing the microwave power density in this type of device can theoretically amplify and stabilize the plasma, but in fact, because the power density of the microwave feed port is higher at this time, and the volume of the plasma becomes larger, it is more likely to drift to the microwave Near the feed port, a destructive breakdown discharge is bound to be formed. As a result, stable atmospheric thermal plasma cannot be formed in ordinary microwave devices.
现有技术中,能形成较为稳定的微波等离子体的装置,只有采用射流形式的微波等离子体炬,这类装置是将微波聚焦到一个极小的点状区域或很短的一段线状区域,并在该区域形成极高的微波功率密度,这个使常压气体发生击穿;但同时由于局部微波功率密度过高,只能在很小的区域形成一个温度极高的小体积等离子核心,并向周围空间扩散;为了防止上述高温扩散对装置的损坏,只能以射流的形式通入大量辅助气体对等离子体进行约束、并定向吹出,从而形成等离子体射流,即形成以高温等离子体为轴心、低温气体为轴套的复合射流,从该复合射流的横断面来计算,等离子体在复合射流中的占比仅为10%-30%。因此,采用射流形式的微波等离子体炬对通入的气体进行处理,只有很小一部分能被有效加热并等离子化,大量待处理气体不能通过等离子体区域,不能产生有效反应;而通过等离子体区域的气体可能因温度过高发生不利的副反应,使物料利用率、处理效率和处理效果都变得较差,难以投入实际应用。而且大量辅助气体的加入不仅加大了微波等离子体装置的处理负担,还增加了后序装置分离负担,同时还降低了反应效率。此外由于这类装置等离子体启动区域与后来连续工作区域是同一个区域,小功率运行时工作区域的微波功率密度就很高了,如果需要大功率等离子体装置,工作区域的微波功率密度、等离子体温度及浓度都会极高,此时受微波传输系统结构、以及散热的限制,可加载的微波功率较小、功率上限低,受到很大限制;此外如果微波功率过大、等离子体温度及浓度过高,辅助气体也难以可靠地约束等离子体并形成射流,最终可导致运行不稳定或装置损坏。因此这类装置在需要高效率、大产量、大功率的工业应用中也受到了很大的限制。In the prior art, the only devices that can form relatively stable microwave plasma are the microwave plasma torches in the form of jets. This type of device focuses the microwaves to a very small point-like region or a very short linear region. And a very high microwave power density is formed in this area, which causes the normal pressure gas to break down; but at the same time, due to the high local microwave power density, only a very high temperature and small volume plasma core can be formed in a very small area, and Diffusion to the surrounding space; in order to prevent the damage to the device caused by the above-mentioned high temperature diffusion, a large amount of auxiliary gas can only be introduced in the form of a jet to confine the plasma and blow it out in a directional manner, so as to form a plasma jet, that is, to form a high temperature plasma as the axis The composite jet with the core and the low-temperature gas as the bushing is calculated from the cross section of the composite jet, and the proportion of plasma in the composite jet is only 10%-30%. Therefore, when a microwave plasma torch in the form of a jet is used to process the incoming gas, only a small part can be effectively heated and plasmaized, and a large amount of the gas to be treated cannot pass through the plasma area and cannot produce an effective reaction; The unfavorable side reaction may occur due to the high temperature of the gas, which makes the material utilization rate, processing efficiency and processing effect become poor, and it is difficult to put into practical application. Moreover, the addition of a large amount of auxiliary gas not only increases the processing burden of the microwave plasma device, but also increases the separation burden of the subsequent device, and also reduces the reaction efficiency. In addition, since the plasma startup area of this type of device is the same area as the subsequent continuous working area, the microwave power density in the working area is very high during low-power operation. If a high-power plasma device is required, the microwave power density in the working area, plasma The body temperature and concentration will be extremely high. At this time, limited by the structure of the microwave transmission system and heat dissipation, the microwave power that can be loaded is small and the upper limit of the power is low, which is greatly limited; in addition, if the microwave power is too large, the plasma temperature and concentration Too high and the assist gas also struggles to reliably confine the plasma and form a jet, which can eventually lead to unstable operation or damage to the device. Therefore, such devices are also greatly limited in industrial applications requiring high efficiency, large output, and high power.
公开号为CN 105979693A,公开日为2016年09月28日的中国专利文献公开了一种大功率微波等离子体发生装置,其特征在于:由微波发生器,三端环形器,负载,三销钉调谐器,波导转同轴接头和炬管组成,微波发生器与三端环形器连接,三端环形器与负载、三销钉调谐器连接,三销钉调谐器与波导转同轴接头连接波导转同轴接头与炬管连接。The publication number is CN 105979693A, and the Chinese patent document with the publication date of September 28, 2016 discloses a high-power microwave plasma generating device, which is characterized in that: a microwave generator, a three-terminal circulator, a load, and a three-pin tuning The microwave generator is connected with the three-terminal circulator, the three-terminal circulator is connected with the load and the three-pin tuner, and the three-pin tuner is connected with the waveguide-to-coaxial joint. The connector connects to the torch.
该专利文献公开的大功率微波等离子体发生装置,在微波的耦合位置上选择距离炬管上端面最少二分之一波长处,可以防止大功率下同轴微波传输接头过热的问题,在炬管外表面附加有散热片的结构,进一步解决了炬管工作时散热的问题,可承受千瓦级功率的,保证在大功率工作状态下等离子体发生装置工作状态良好。但是,需要大量辅助气体才能对等离子体进行有效约束和定向,大量待处理气体不能通过等离子体区域,不能产生有效反应;而通过等离子体区域的气体可能因温度过高发生不利的副反应,使物料利用率、处理效率和处理效果都变得较差。此外如果微波功率过大、等离子体温度及浓度过高,辅助气体也难以可靠地约束等离子体并形成射流,最终可导致运行不稳定或装置损坏。而且大量辅助气体的加入不仅加大了微波等离子体装置的处理负担,还增加了后序装置分离负担,同时还降低了反应效率。此外由于这类装置等离子体启动区域与后来连续工作区域是同一个区域,小功率运行时工作区域的微波功率密度就很高了,如果需要大功率等离子体装置,工作区域的微波功率密度、等离子体温度及浓度都会极高,此时受微波传输系统结构、以及散热的限制,可加载的微波功率较小、功率上限低,受到很大限制,对于工业应用所需要几十千瓦、百千瓦、千千瓦量级长时间连续应用依然无法满足。In the high-power microwave plasma generating device disclosed in this patent document, the microwave coupling position is selected at least one-half wavelength away from the upper end face of the torch, which can prevent the problem of overheating of the coaxial microwave transmission joint under high power. The structure with additional heat sinks on the outer surface further solves the problem of heat dissipation when the torch is working, and can withstand kilowatt-level power, ensuring that the plasma generating device works well under high-power working conditions. However, a large amount of auxiliary gas is required to effectively confine and orient the plasma, and a large amount of gas to be treated cannot pass through the plasma region and cannot produce an effective reaction; and the gas passing through the plasma region may have adverse side reactions due to excessive temperature, causing Material utilization, processing efficiency and processing effect all become poor. In addition, if the microwave power is too high, and the plasma temperature and concentration are too high, it is difficult for the auxiliary gas to reliably confine the plasma and form a jet, which can eventually lead to unstable operation or device damage. Moreover, the addition of a large amount of auxiliary gas not only increases the processing burden of the microwave plasma device, but also increases the separation burden of the subsequent device, and also reduces the reaction efficiency. In addition, since the plasma startup area of this type of device is the same area as the subsequent continuous working area, the microwave power density in the working area is very high during low-power operation. If a high-power plasma device is required, the microwave power density in the working area, plasma The body temperature and concentration will be extremely high. At this time, limited by the structure of the microwave transmission system and heat dissipation, the loadable microwave power is small and the power upper limit is low, which is greatly limited. For industrial applications, tens of kilowatts, hundreds of kilowatts, The long-term continuous application of the kilowatt order is still unsatisfactory.
发明内容SUMMARY OF THE INVENTION
本发明为了克服上述现有技术的缺陷,提供一种非射流的常压热等离子发生器,本发明能够形成体积较大而均匀的热等离子体,实现对待处理气体的充分均匀加热,提高反应效率,而且可在设定空间范围内均匀分布,能够有效防止产生破坏性击穿放电,易于控制散热平衡,在尽量减少热耗散的情况下,保证整个发生器的温度合理、结构稳定,实现长期运行稳定性。In order to overcome the above-mentioned defects of the prior art, the present invention provides a non-jet normal pressure thermal plasma generator. The present invention can form a large and uniform thermal plasma, realize sufficient and uniform heating of the gas to be treated, and improve the reaction efficiency. , and can be evenly distributed within the set space range, which can effectively prevent the generation of destructive breakdown discharge, and is easy to control the heat dissipation balance. In the case of minimizing heat dissipation, the temperature of the entire generator is guaranteed to be reasonable and the structure is stable, so as to achieve long-term Operational stability.
本发明通过下述技术方案实现:The present invention is achieved through the following technical solutions:
一种非射流的常压热等离子发生器,包括点火器和微波源,其特征在于:还包括反应腔体,所述反应腔体上开有气体通道Ⅰ和气体通道Ⅱ,反应腔体包括柱形腔和位于柱形腔上方的锥形腔,所述锥形腔与柱形腔连通,柱形腔上开有微波馈口,所述微波源与微波馈口连接,所述点火器连接在锥形腔上。A non-jet normal-pressure thermal plasma generator, comprising an igniter and a microwave source, and characterized in that: it also includes a reaction cavity, the reaction cavity is provided with a gas channel I and a gas channel II, and the reaction cavity includes a column A cavity and a conical cavity located above the cylindrical cavity, the conical cavity is communicated with the cylindrical cavity, the cylindrical cavity is provided with a microwave feed port, the microwave source is connected to the microwave feed port, and the igniter is connected to the on the conical cavity.
所述反应腔体为双层金属结构,包括内腔体和外腔体,内腔体和外腔体之间形成一个用于通入流体介质的夹层。The reaction chamber is a double-layer metal structure, including an inner chamber and an outer chamber, and an interlayer for passing a fluid medium is formed between the inner chamber and the outer chamber.
所述锥形腔的内腔体内壁上衬有隔热层,隔热层的厚度为5-200毫米。The inner wall of the inner cavity of the conical cavity is lined with a thermal insulation layer, and the thickness of the thermal insulation layer is 5-200 mm.
所述隔热层为氧化铝隔热层、氧化锆隔热层、氧化硅隔热层、硅隔热层、石墨隔热层、氮化硅隔热层、氮化碳隔热层或氮化硼隔热层。The thermal insulation layer is an aluminum oxide thermal insulation layer, a zirconia thermal insulation layer, a silicon oxide thermal insulation layer, a silicon thermal insulation layer, a graphite thermal insulation layer, a silicon nitride thermal insulation layer, a carbon nitride thermal insulation layer or a nitrided thermal insulation layer. Boron insulation.
所述柱形腔内固定连接有透波隔板,透波隔板与柱形腔形成微波馈入区,微波馈口位于微波馈入区内。A wave-transmitting baffle is fixedly connected in the cylindrical cavity, the wave-transmitting baffle and the cylindrical cavity form a microwave feeding area, and the microwave feeding port is located in the microwave feeding area.
所述透波隔板的上方设置有透波网孔板,透波网孔板固定在柱形腔的内腔体内壁上,透波网孔板和透波隔板均为水平布置。A wave-transmitting mesh plate is arranged above the wave-transmitting baffle, the wave-transmitting mesh plate is fixed on the inner wall of the inner cavity of the cylindrical cavity, and both the wave-transmitting mesh plate and the wave-transmitting baffle are arranged horizontally.
所述微波源或柱形腔上设置有用于向微波馈入区通风或加压的微波保护进气口。The microwave source or the cylindrical cavity is provided with a microwave protection air inlet for ventilating or pressurizing the microwave feeding area.
所述柱形腔上开有微波保护出气口,微波保护出气口位于微波馈入区,微波保护出气口上连接有出气调节阀。The cylindrical cavity is provided with a microwave protection air outlet, the microwave protection air outlet is located in the microwave feeding area, and an air outlet regulating valve is connected to the microwave protection air outlet.
所述点火器为高频等离子炬或化学火焰炬或微波等离子炬。The igniter is a high frequency plasma torch or a chemical flame torch or a microwave plasma torch.
所述锥形腔的锥度为0.001:1-1000:1。The taper of the conical cavity is 0.001:1-1000:1.
本发明的工作原理如下:The working principle of the present invention is as follows:
现有技术中,低微波功率密度的微波装置难以形成等离子体、等离子体易漂移漂散、易引起微波馈口击穿、无法保持等离子体稳定。射流形式的微波等离子体炬激发和存在等离子都在同一高微波功率密度区域、温度高、需要引入大量辅助气体进行约束定向、通入气体反应率低、功率小、难以工业化应用。与上述两者相比,本发明的微波等离子体可以稳定地存在于微波功率密度相对很低的反应腔内。In the prior art, it is difficult for a microwave device with low microwave power density to form plasma, the plasma is easy to drift and drift, the microwave feed port is likely to break down, and the plasma cannot be kept stable. The microwave plasma torch in the form of jet is excited and exists in the same high microwave power density region, the temperature is high, a large amount of auxiliary gas needs to be introduced for confinement orientation, the reaction rate of the introduced gas is low, the power is low, and it is difficult to industrialize application. Compared with the above two, the microwave plasma of the present invention can stably exist in the reaction cavity with relatively low microwave power density.
本发明独特地采用了这种带有锥形腔的反应腔体结构后,对反应腔体内微波功率密度分布并没有太大影响,并有效地将微波原理与温差条件下流体的浮力原理及其运动规律有机的结合在一起,即使是在微波功率密度较低的条件下形成体积较小的等离子体后,也会由于升温以及密度的变化在浮力的作用下,无需通入辅助气体高速射流进行约束控制,就能向上漂移并汇聚在锥形腔顶部,而不会四处移动,使等离子体存续的温度条件得以保持,更不至于漂散熄灭。After the invention uniquely adopts the reaction cavity structure with the conical cavity, it does not have much influence on the microwave power density distribution in the reaction cavity, and effectively combines the microwave principle with the buoyancy principle of the fluid under the condition of temperature difference and its buoyancy principle. The laws of motion are organically combined. Even if a small plasma is formed under the condition of low microwave power density, it will be carried out under the action of buoyancy due to the temperature rise and the change of density, without the need to introduce a high-speed jet of auxiliary gas. Constraint control, it can drift upward and converge on the top of the conical cavity without moving around, so that the temperature conditions for the existence of plasma can be maintained, and it will not drift and extinguish.
更重要的是由于锥形腔上小下大的结构,能在保持等离子体汇聚的同时,又不限制等离子体的体积发生变化,能随着输入微波功率密度加大让等离子体自由膨胀,这样就得到了大体积的等离子体;等离子体聚集在锥形腔中体积虽然会随微波功率密度增加而增加,但等离子体所占锥形空间投影面积按相应直径的平方倍扩张,因此等离子体在垂直方向的扩张较小,只要锥形腔尺寸与输入的总微波功率匹配,即足够大,等离子体就不会漂移到反应腔体的柱形腔中;再者,反应腔体的柱形腔内微波功率密度更低,无法提供足够的电场强度使等离子体存在于该区域。基于此,本发明的装置结构可在不加入辅助气体射流约束等离子体的情况下,简单、有效地控制等离子体稳定的存在,且不向微波馈入区、微波馈口扩散,不会引发破坏性击穿放电,保证装置的长期稳定运行。More importantly, due to the structure of the conical cavity with a small upper part and a large lower part, it can maintain the plasma concentration without restricting the volume of the plasma to change, and can allow the plasma to expand freely with the increase of the input microwave power density. A large volume of plasma is obtained; although the volume of the plasma gathered in the conical cavity will increase with the increase of the microwave power density, the projected area of the conical space occupied by the plasma expands by the square of the corresponding diameter, so the plasma is in the conical cavity. The expansion in the vertical direction is small, as long as the size of the conical cavity matches the total input microwave power, that is, it is large enough, the plasma will not drift into the cylindrical cavity of the reaction cavity; The inner microwave power density is lower and cannot provide enough electric field strength for the plasma to exist in this region. Based on this, the device structure of the present invention can simply and effectively control the stable existence of plasma without adding auxiliary gas jets to confine the plasma, and does not diffuse to the microwave feeding area and the microwave feeding port, and will not cause damage to ensure the long-term stable operation of the device.
同时,由于等离子体被有效地控制在锥形腔内,且对微波有良好的吸收作用,可受到微波整体、均匀地加载,并以较低地速度流动,因此等离子体温度较为均匀,经测试得知不同区域温差在平均温度的±50℃以内;此外由于不需要辅助气体对等离子体进行约束,不会有大量低温气体包围在等离子体外围,仅等离子体接触腔壁或隔热层的部分温度较低,但由于进行保温的作用温度不会太低,且从锥形腔的横截面看只是一个很细的环形区域,占比小于5%;因此等离子体存在的区域的等离子体占比高达95%以上。At the same time, since the plasma is effectively controlled in the conical cavity and has a good absorption effect on microwaves, it can be loaded by the microwaves as a whole and uniformly, and flows at a low speed, so the plasma temperature is relatively uniform. It is known that the temperature difference in different regions is within ±50°C of the average temperature; in addition, since no auxiliary gas is required to confine the plasma, there will not be a large amount of low-temperature gas surrounding the plasma, and only the part of the plasma that contacts the cavity wall or the thermal insulation layer The temperature is low, but the temperature will not be too low due to the effect of heat preservation, and from the cross section of the conical cavity, it is only a very thin annular area, accounting for less than 5%; therefore, the proportion of plasma in the area where plasma exists as high as 95% or more.
本发明的有益效果主要表现在以下方面:The beneficial effects of the present invention are mainly manifested in the following aspects:
一、本发明,反应腔体上开有气体通道Ⅰ和气体通道Ⅱ,反应腔体包括柱形腔和位于柱形腔上方的锥形腔,锥形腔与柱形腔连通,柱形腔上开有微波馈口,微波源与微波馈口连接,点火器连接在锥形腔上,通过独特的采用带有锥形腔的反应腔体结构,有效地将微波原理与温差条件下流体的浮力原理及其运动规律有机的结合在了一起,即使是在微波功率密度较低的条件下形成体积较小的等离子体后,也会由于升温以及密度的变化,在浮力的作用下无需通入辅助气体高速射流进行约束控制,就能向上漂移并汇聚在锥形腔顶部,而不会四处移动,使等离子体存续的温度条件得以保持,更不至于漂散熄灭;更重要的是由于锥形腔上小下大的结构,能在保持等离子体汇聚的同时,又不限制等离子体的体积发生变化,能随着输入微波功率密度加大让等离子体自由膨胀,这样就得到了大体积的等离子体;等离子体聚集在锥形腔中体积虽然会随微波功率密度增加而增加,但等离子体所占锥形空间投影面积按相应直径的平方倍扩张,因此等离子体在垂直方向的扩张较小,只要锥形腔尺寸与输入的总微波功率匹配,即锥形腔足够大,等离子体就不会漂移到反应腔体的柱形腔中;再者,反应腔体的柱形腔内微波功率密度更低,无法提供足够的电场强度使等离子体存在于该区域。基于此,本发明的装置结构可在不加入辅助气体射流约束等离子体的情况下,简单、有效地控制等离子体稳定的存在,且不向微波馈入区、微波馈口扩散,不会引发破坏性击穿放电,保证装置的长期稳定运行。可从气体通道Ⅰ通入、气体通道Ⅱ排出,也可以从气体通道Ⅱ通入、气体通道Ⅰ排出,使待处理气体低速、均匀地通过反应腔体内的等离子体区域。可以有三种技术手段,即:第一,在反应腔体结构特别是锥形腔不变,以及输入微波功率不变的情况下,调节通过等离子体区域的待处理气体流量,加大流量可使等离子体体积增大、温度降低,减小流量可使等离子体体积缩小、温度提高;第二,在反应腔体结构以及锥形腔锥度不变,且待处理气体流量不变的情况下,调节输入微波功率大小,加大微波功率可使等离子体体积增大、温度提高,减小微波功率可使等离子体体积缩小、温度降低;第三,在待处理气体流量不变的情况下,更换不同锥度的锥形腔,减小锥度可在输入微波功率变化时,降低等离子体体积增减幅度和速度、提高等离子体温度增减幅度和速度,加大锥度可在输入微波功率变化时,加大等离子体体积增减幅度和速度、减小等离子体温度增减幅度和速度。此外,可以综合性地采用上述三种技术手段,调节等离子体区域通过气体流量、调节输入微波功率、改变锥形腔锥度这三种手段,结合处理物料的需求,方便、有效地调节等离子体体积和温度,满足实际应用需要。此外,由于锥形腔不同于射流微波等离子体炬,是一个微波功率密度较低的系统,不受微波传输系统限制,可根据最大输入微波功率,加大加长锥形腔,或者缩小缩短锥形腔,可形成单台1kW-1000kW甚至更大微波功率的大体积微波等离子体装置。较现有技术而言,能够实现对待处理气体的充分均匀加热,提高反应效率,形成体积较大而均匀的热等离子体,能够有效防止产生破坏性击穿放电,保证整个发生器的长期运行稳定性。因此,本发明装置不仅调节手段丰富、易于控制、易于工程化,还可以满足大型工业生产需要。1. In the present invention, a gas channel I and a gas channel II are opened on the reaction cavity, the reaction cavity includes a cylindrical cavity and a conical cavity located above the cylindrical cavity, the conical cavity is communicated with the cylindrical cavity, and the cylindrical cavity is connected to the cylindrical cavity. There is a microwave feed port, the microwave source is connected to the microwave feed port, and the igniter is connected to the conical cavity. Through the unique reaction cavity structure with a conical cavity, the microwave principle is effectively combined with the buoyancy of the fluid under the condition of temperature difference. The principle and its motion law are organically combined. Even after a small volume of plasma is formed under the condition of low microwave power density, due to the temperature rise and the change of density, there is no need to enter the auxiliary under the action of buoyancy. The high-speed jet of gas is constrained and controlled to drift upward and converge on the top of the conical cavity without moving around, so that the temperature conditions for the existence of the plasma can be maintained, and it will not drift and extinguish; more importantly, because of the conical cavity The structure with a small top and a large bottom can keep the plasma converged without restricting the volume of the plasma to change. With the increase of the input microwave power density, the plasma can expand freely, so that a large-volume plasma can be obtained. ; Although the volume of the plasma gathered in the conical cavity will increase with the increase of the microwave power density, the projected area of the conical space occupied by the plasma expands by the square of the corresponding diameter, so the expansion of the plasma in the vertical direction is small, as long as The size of the conical cavity matches the total input microwave power, that is, the conical cavity is large enough so that the plasma will not drift into the cylindrical cavity of the reaction cavity; furthermore, the microwave power density in the cylindrical cavity of the reaction cavity is higher. low, it cannot provide enough electric field strength for plasma to exist in this area. Based on this, the device structure of the present invention can simply and effectively control the stable existence of plasma without adding auxiliary gas jets to confine the plasma, and does not diffuse to the microwave feeding area and the microwave feeding port, and will not cause damage to ensure the long-term stable operation of the device. The gas to be processed can pass through the gas channel I and be discharged from the gas channel II, or be passed through the gas channel II and discharged from the gas channel I, so that the gas to be treated can pass through the plasma area in the reaction chamber at a low speed and uniformly. There are three technical means, namely: First, when the structure of the reaction chamber, especially the conical chamber, remains unchanged, and the input microwave power remains unchanged, adjust the flow rate of the gas to be processed through the plasma area, and increase the flow rate to make The plasma volume increases and the temperature decreases. Reducing the flow rate can reduce the plasma volume and increase the temperature. Second, when the structure of the reaction chamber and the taper of the conical chamber remain unchanged, and the flow rate of the gas to be treated remains unchanged, adjust Input the microwave power. Increasing the microwave power can increase the plasma volume and increase the temperature. Decreasing the microwave power can reduce the plasma volume and reduce the temperature. Tapered conical cavity, reducing the taper can reduce the amplitude and speed of plasma volume increase and decrease when the input microwave power changes, and increase the plasma temperature increase and decrease amplitude and speed, and increase the taper when the input microwave power changes. Plasma volume increase and decrease amplitude and speed, decrease plasma temperature increase and decrease amplitude and speed. In addition, the above three technical means can be comprehensively used to adjust the flow rate of gas passing through the plasma area, adjust the input microwave power, and change the taper of the conical cavity. Combined with the needs of the processing materials, the plasma volume can be adjusted conveniently and effectively. and temperature to meet practical application needs. In addition, because the conical cavity is different from the jet microwave plasma torch, it is a system with low microwave power density and is not limited by the microwave transmission system. According to the maximum input microwave power, the conical cavity can be enlarged and lengthened, or the conical cavity can be shortened and shortened. The cavity can form a single large-volume microwave plasma device with microwave power of 1kW-1000kW or even greater. Compared with the prior art, it can achieve sufficient and uniform heating of the gas to be treated, improve the reaction efficiency, and form a large and uniform thermal plasma, which can effectively prevent the generation of destructive breakdown discharge and ensure long-term stable operation of the entire generator. sex. Therefore, the device of the present invention not only has abundant adjustment means, is easy to control, and is easy to engineer, but also can meet the needs of large-scale industrial production.
二、本发明,反应腔体为双层金属结构,包括内腔体和外腔体,内腔体和外腔体之间形成一个用于通入流体介质的夹层,能够向夹层中通入与反应腔体不发生反应的气体或液体,如空气、氮气、水、导热油,以实现恒温调节,即温度低时气体或液体的流量为零,能够起到保温作用,温度高时加大气体或液体的流量,能够起到散热作用,从而能够有效避免腔壁金属温度过高而失去强度,可制造大型大功率装置,满足大型工业生产需要。2. In the present invention, the reaction cavity is a double-layer metal structure, including an inner cavity and an outer cavity, and an interlayer for introducing a fluid medium is formed between the inner cavity and the outer cavity. The gas or liquid that does not react in the reaction chamber, such as air, nitrogen, water, and heat transfer oil, can be used to achieve constant temperature regulation, that is, when the temperature is low, the flow rate of the gas or liquid is zero, which can play a role of heat preservation, and when the temperature is high, increase the gas Or liquid flow, can play a role in heat dissipation, which can effectively prevent the metal temperature of the cavity wall from being too high and lose its strength, and can manufacture large-scale high-power devices to meet the needs of large-scale industrial production.
三、本发明,锥形腔的内腔体内壁上衬有隔热层,隔热层的厚度为5-200毫米,选择这种特定厚度的隔热层,主要是为了在减少等离子体能量耗散的同时,满足功率较小的小型等离子体装置可以采用较薄的隔热层,以减小装置体积、提高集成度、提高启动便利性;以及满足功率较大的大型等离子装置可以采用较大的厚度,以大大降低热量向外传导的速度,减少了需要靠散热带走的能量,减少了向反应腔体的双层金属结构通入流体的流量,更容易实现对反应腔体温度的控制;从而实现在尽量减少系统热耗散的同时,有效避免内腔体金属温度过高而失去强度。同时,由于金属强度得到了保证,整个反应腔的强度、密封性都可以得到有效地保证,使本发明发生器可以安全地适用于高温处理、易燃易爆物料处理、有毒有害物料处理、化工生产,具有广泛地应用前景。3. In the present invention, the inner wall of the inner cavity of the conical cavity is lined with a thermal insulation layer, and the thickness of the thermal insulation layer is 5-200 mm. The selection of this specific thickness of the thermal insulation layer is mainly to reduce the plasma energy consumption. At the same time, small plasma devices that meet the requirements of lower power can use thinner thermal insulation layers to reduce the volume of the device, improve integration, and improve startup convenience; and large-scale plasma devices that meet the requirements of higher power can use larger It can greatly reduce the speed of heat conduction to the outside, reduce the energy that needs to be taken away by heat dissipation, reduce the flow rate of the fluid into the double-layer metal structure of the reaction chamber, and make it easier to control the temperature of the reaction chamber. ; So as to reduce the heat dissipation of the system as much as possible, it can effectively prevent the metal temperature of the inner cavity from being too high and lose its strength. At the same time, since the metal strength is guaranteed, the strength and sealing performance of the entire reaction chamber can be effectively guaranteed, so that the generator of the present invention can be safely applied to high temperature treatment, inflammable and explosive material treatment, toxic and harmful material treatment, chemical industry production, has a wide range of application prospects.
四、本发明,隔热层为氧化铝隔热层、氧化锆隔热层、氧化硅隔热层、硅隔热层、石墨隔热层、氮化硅隔热层、氮化碳隔热层或氮化硼隔热层,采用这些隔热材料不仅耐高温,还能在高温条件下保持良好的物理稳定性和化学稳定性,不会发生破裂、脱落、分解,不会产生对待处理气体的污染,从而减少后序处理工艺、降低生产成本。Fourth, in the present invention, the thermal insulation layer is an aluminum oxide thermal insulation layer, a zirconia thermal insulation layer, a silicon oxide thermal insulation layer, a silicon thermal insulation layer, a graphite thermal insulation layer, a silicon nitride thermal insulation layer, and a carbon nitride thermal insulation layer Or boron nitride thermal insulation layer, these thermal insulation materials are not only resistant to high temperature, but also maintain good physical and chemical stability under high temperature conditions, and will not crack, fall off, decompose, and will not produce gas to be treated. pollution, thereby reducing the post-processing process and production costs.
五、本发明,柱形腔内固定连接有透波隔板,透波隔板与柱形腔形成微波馈入区,微波馈口位于微波馈入区内,通过设置透波隔板隔离出一个相对密封的微波馈入区,能够有效防止等离子体扩散到微波馈入区内,进而避免等离子体在微波馈口附近引发破坏性击穿放电。5. In the present invention, a wave-transmitting baffle is fixedly connected in the cylindrical cavity, the wave-transmitting baffle and the cylindrical cavity form a microwave feeding area, and the microwave feeding port is located in the microwave feeding area. The relatively sealed microwave feeding area can effectively prevent the plasma from diffusing into the microwave feeding area, thereby preventing the plasma from causing destructive breakdown discharge near the microwave feeding port.
六、本发明,透波隔板的上方设置有透波网孔板,透波网孔板固定在柱形腔的内腔体内壁上,透波网孔板和透波隔板均为水平布置,当待处理气体从气体通道Ⅰ通入、气体通道Ⅱ排出时,能够使通入的待处理气体均匀分散,并以相对较低的流速继续向上运动;由于待处理流速较低,能够均匀地进入等离子体区域,且不会对等离子体产生较大的扰动,能够保证待处理气体等离子化的稳定性。6. In the present invention, a wave-transmitting mesh plate is arranged above the wave-transmitting baffle, the wave-transmitting mesh plate is fixed on the inner wall of the inner cavity of the cylindrical cavity, and the wave-transmitting mesh plate and the wave-transmitting baffle are arranged horizontally. , when the gas to be treated is passed in from the gas channel I and discharged from the gas channel II, the incoming gas to be treated can be uniformly dispersed and continue to move upward at a relatively low flow rate; due to the low flow rate to be treated, it can be uniformly Into the plasma area, and will not produce large disturbance to the plasma, which can ensure the stability of the plasma to be treated gas.
七、本发明,微波源或柱形腔上设置有用于向微波馈入区通风或加压的微波保护进气口,通过微波保护进气口向微波馈入区通入气体,通入的气体可对微波馈入区进行冷却,防止等离子体以及热辐射对微波馈入区的影响,确保微波馈入区的气体击穿强度较高,进而确保不会发生破坏性击穿放电,保证微波持续稳定的输入。7. In the present invention, the microwave source or the cylindrical cavity is provided with a microwave protection air inlet for ventilating or pressurizing the microwave feeding area, and gas is introduced into the microwave feeding area through the microwave protection air inlet. The microwave feeding area can be cooled to prevent the influence of plasma and thermal radiation on the microwave feeding area, ensuring that the gas breakdown strength in the microwave feeding area is high, thereby ensuring that no destructive breakdown discharge occurs, and ensuring that the microwave continues stable input.
八、本发明,柱形腔上开有微波保护出气口,微波保护出气口位于微波馈入区内,微波保护出气口上连接有出气调节阀,气体从微波保护出气口排出时,通过调节或者关闭微波保护出气口的出气调节阀,就能够提高微波馈入区的气体压强,从而进一步提高微波馈入区的击穿强度。8. In the present invention, a microwave protection gas outlet is opened on the cylindrical cavity, the microwave protection gas outlet is located in the microwave feeding area, and a gas outlet regulating valve is connected to the microwave protection gas outlet. When the gas is discharged from the microwave protection gas outlet, it is adjusted or Closing the gas outlet regulating valve of the microwave protection gas outlet can increase the gas pressure in the microwave feeding zone, thereby further improving the breakdown strength of the microwave feeding zone.
九、本发明,锥形腔的锥度为0.001:1-1000:1,可以在待处理气体流量不变的情况下,满足更换不同锥度的锥形腔的需要,减小锥度可在输入微波功率变化时,降低等离子体体积增减幅度和速度、提高等离子体温度增减幅度和速度,加大锥度可在输入微波功率变化时,加大等离子体体积增减幅度和速度、减小等离子体温度增减幅度和速度,可以增加对等离子体的控制手段,满足实际应用需要。9. In the present invention, the taper of the conical cavity is 0.001:1-1000:1, which can meet the needs of replacing conical cavities with different tapers under the condition that the flow rate of the gas to be treated remains unchanged. When changing, reduce the amplitude and speed of increase and decrease of plasma volume, increase the amplitude and speed of increase and decrease of plasma temperature, and increase the taper to increase the amplitude and speed of increase and decrease of plasma volume and reduce plasma temperature when the input microwave power changes. The increase or decrease range and speed can increase the control means for the plasma to meet the needs of practical applications.
附图说明Description of drawings
下面将结合说明书附图和具体实施方式对本发明作进一步的具体说明,其中:The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments of the description, wherein:
图1为本发明的结构示意图;Fig. 1 is the structural representation of the present invention;
图2为本发明实施例5的结构示意图;2 is a schematic structural diagram of
图中标记:1、点火器,2、锥形腔,3、微波源,4、微波馈口,5、气体通道Ⅰ,6、气体通道Ⅱ,7、柱形腔,8、内腔体,9、外腔体,10、夹层,11、隔热层,12、透波隔板,13、透波网孔板,14、微波保护进气口,15、微波保护出气口,16、出气调节阀。Labels in the figure: 1, igniter, 2, conical cavity, 3, microwave source, 4, microwave feed port, 5, gas channel I, 6, gas channel II, 7, cylindrical cavity, 8, inner cavity, 9. Outer cavity, 10, interlayer, 11, heat insulation layer, 12, wave-transmitting baffle, 13, wave-transmitting mesh plate, 14, microwave protection air inlet, 15, microwave protection air outlet, 16, air outlet adjustment valve.
具体实施方式Detailed ways
实施例1Example 1
一种非射流的常压热等离子发生器,包括点火器1和微波源3,还包括反应腔体,所述反应腔体上开有气体通道Ⅰ5和气体通道Ⅱ6,反应腔体包括柱形腔7和位于柱形腔7上方的锥形腔2,所述锥形腔2与柱形腔7连通,柱形腔7上开有微波馈口4,所述微波源3与微波馈口4连接,所述点火器1连接在锥形腔2上。A non-jet atmospheric thermal plasma generator includes an
本实施例为最基本的实施方式,反应腔体上开有气体通道Ⅰ和气体通道Ⅱ,反应腔体包括柱形腔和位于柱形腔上方的锥形腔,锥形腔与柱形腔连通,柱形腔上开有微波馈口,微波源与微波馈口连接,点火器连接在锥形腔上,通过独特的采用带有锥形腔的反应腔体结构,有效地将微波原理与温差条件下流体的浮力原理及其运动规律有机的结合在了一起,即使是在微波功率密度较低的条件下形成体积较小的等离子体后,也会由于升温以及密度的变化,在浮力的作用下无需通入辅助气体高速射流进行约束控制,就能向上漂移并汇聚在锥形腔顶部,而不会四处移动,使等离子体存续的温度条件得以保持,更不至于漂散熄灭;更重要的是由于锥形腔上小下大的结构,能在保持等离子体汇聚的同时,又不限制等离子体的体积发生变化,能随着输入微波功率密度加大让等离子体自由膨胀,这样就得到了大体积的等离子体;等离子体聚集在锥形腔中体积虽然会随微波功率密度增加而增加,但等离子体所占锥形空间投影面积按相应直径的平方倍扩张,因此等离子体在垂直方向的扩张较小,只要锥形腔尺寸与输入的总微波功率匹配,即锥形腔足够大,等离子体就不会漂移到反应腔体的柱形腔中;再者,反应腔体的柱形腔内微波功率密度更低,无法提供足够的电场强度使等离子体存在于该区域。基于此,本发明的装置结构可在不加入辅助气体射流约束等离子体的情况下,简单、有效地控制等离子体稳定的存在,且不向微波馈入区、微波馈口扩散,不会引发破坏性击穿放电,保证装置的长期稳定运行。可从气体通道Ⅰ通入、气体通道Ⅱ排出,也可以从气体通道Ⅱ通入、气体通道Ⅰ排出,使待处理气体低速、均匀地通过反应腔体内的等离子体区域。可以有三种技术手段,即:第一,在反应腔体结构特别是锥形腔不变,以及输入微波功率不变的情况下,调节通过等离子体区域的待处理气体流量,加大流量可使等离子体体积增大、温度降低,减小流量可使等离子体体积缩小、温度提高;第二,在反应腔体结构以及锥形腔锥度不变,且待处理气体流量不变的情况下,调节输入微波功率大小,加大微波功率可使等离子体体积增大、温度提高,减小微波功率可使等离子体体积缩小、温度降低;第三,在待处理气体流量不变的情况下,更换不同锥度的锥形腔,减小锥度可在输入微波功率变化时,降低等离子体体积增减幅度和速度、提高等离子体温度增减幅度和速度,加大锥度可在输入微波功率变化时,加大等离子体体积增减幅度和速度、减小等离子体温度增减幅度和速度。此外,可以综合性地采用上述三种技术手段,调节等离子体区域通过气体流量、调节输入微波功率、改变锥形腔锥度这三种手段,结合处理物料的需求,方便、有效地调节等离子体体积和温度,满足实际应用需要。此外,由于锥形腔不同于射流微波等离子体炬,是一个微波功率密度较低的系统,不受微波传输系统限制,可根据最大输入微波功率,加大加长锥形腔,或者缩小缩短锥形腔,可形成单台1kW-1000kW甚至更大微波功率的大体积微波等离子体装置。较现有技术而言,能够实现对待处理气体的充分均匀加热,提高反应效率,形成体积较大而均匀的热等离子体,能够有效防止产生破坏性击穿放电,保证整个发生器的长期运行稳定性。因此,本发明装置不仅调节手段丰富、易于控制、易于工程化,还可以满足大型工业生产需要。This embodiment is the most basic implementation. The reaction chamber is provided with a gas channel I and a gas channel II. The reaction chamber includes a cylindrical cavity and a conical cavity located above the cylindrical cavity. The conical cavity is communicated with the cylindrical cavity. , there is a microwave feed port on the cylindrical cavity, the microwave source is connected with the microwave feed port, and the igniter is connected with the conical cavity. The buoyancy principle of the fluid and its motion law under the condition are organically combined. Even after the formation of a small volume of plasma under the condition of low microwave power density, the effect of buoyancy will be affected by the temperature rise and the change of density. It can drift upward and converge at the top of the conical cavity without the need to introduce a high-speed jet of auxiliary gas for confinement control without moving around, so that the temperature conditions for the existence of the plasma can be maintained, and it will not drift and extinguish; more importantly It is due to the structure of the conical cavity that the upper part is small and the lower part is large, which can keep the plasma convergence without restricting the volume of the plasma to change, and can allow the plasma to expand freely with the increase of the input microwave power density. Large-volume plasma; although the volume of the plasma gathered in the conical cavity will increase with the increase of the microwave power density, the projected area of the conical space occupied by the plasma expands by the square times of the corresponding diameter. The expansion is small, as long as the size of the conical cavity matches the total input microwave power, that is, the conical cavity is large enough, the plasma will not drift into the cylindrical cavity of the reaction cavity; The inner microwave power density is lower and cannot provide enough electric field strength for the plasma to exist in this region. Based on this, the device structure of the present invention can simply and effectively control the stable existence of plasma without adding auxiliary gas jets to confine the plasma, and does not diffuse to the microwave feeding area and the microwave feeding port, and will not cause damage to ensure the long-term stable operation of the device. The gas to be processed can pass through the gas channel I and be discharged from the gas channel II, or be passed through the gas channel II and discharged from the gas channel I, so that the gas to be treated can pass through the plasma area in the reaction chamber at a low speed and uniformly. There are three technical means, namely: First, when the structure of the reaction chamber, especially the conical chamber, remains unchanged, and the input microwave power remains unchanged, adjust the flow rate of the gas to be processed through the plasma area, and increase the flow rate to make The plasma volume increases and the temperature decreases. Reducing the flow rate can reduce the plasma volume and increase the temperature. Second, when the structure of the reaction chamber and the taper of the conical chamber remain unchanged, and the flow rate of the gas to be treated remains unchanged, adjust Input the microwave power. Increasing the microwave power can increase the plasma volume and increase the temperature. Decreasing the microwave power can reduce the plasma volume and reduce the temperature. Tapered conical cavity, reducing the taper can reduce the amplitude and speed of plasma volume increase and decrease when the input microwave power changes, and increase the plasma temperature increase and decrease amplitude and speed, and increase the taper when the input microwave power changes. Plasma volume increase and decrease amplitude and speed, decrease plasma temperature increase and decrease amplitude and speed. In addition, the above three technical means can be comprehensively used to adjust the flow rate of gas passing through the plasma area, adjust the input microwave power, and change the taper of the conical cavity. Combined with the needs of the processing materials, the plasma volume can be adjusted conveniently and effectively. and temperature to meet practical application needs. In addition, because the conical cavity is different from the jet microwave plasma torch, it is a system with low microwave power density and is not limited by the microwave transmission system. According to the maximum input microwave power, the conical cavity can be enlarged and lengthened, or the conical cavity can be shortened and shortened. The cavity can form a single large-volume microwave plasma device with microwave power of 1kW-1000kW or even greater. Compared with the prior art, it can achieve sufficient and uniform heating of the gas to be treated, improve the reaction efficiency, and form a large and uniform thermal plasma, which can effectively prevent the generation of destructive breakdown discharge and ensure long-term stable operation of the entire generator. sex. Therefore, the device of the present invention not only has abundant adjustment means, is easy to control, and is easy to engineer, but also can meet the needs of large-scale industrial production.
实施例2Example 2
一种非射流的常压热等离子发生器,包括点火器1和微波源3,还包括反应腔体,所述反应腔体上开有气体通道Ⅰ5和气体通道Ⅱ6,反应腔体包括柱形腔7和位于柱形腔7上方的锥形腔2,所述锥形腔2与柱形腔7连通,柱形腔7上开有微波馈口4,所述微波源3与微波馈口4连接,所述点火器1连接在锥形腔2上。A non-jet atmospheric thermal plasma generator includes an
所述反应腔体为双层金属结构,包括内腔体8和外腔体9,内腔体8和外腔体9之间形成一个用于通入流体介质的夹层10。The reaction chamber is a double-layer metal structure, including an
所述锥形腔2的内腔体8内壁上衬有隔热层11,隔热层11的厚度为5毫米。The inner wall of the
所述隔热层11为氧化铝隔热层。The
本实施例为一较佳实施方式,反应腔体为双层金属结构,包括内腔体和外腔体,内腔体和外腔体之间形成一个用于通入流体介质的夹层,能够向夹层中通入与反应腔体不发生反应的气体或液体,如空气、氮气、水、导热油,以实现恒温调节,即温度低时气体或液体的流量为零,能够起到保温作用,温度高时加大气体或液体的流量,能够起到散热作用,从而能够有效避免腔壁金属温度过高而失去强度,可制造大型大功率装置,满足大型工业生产需要。This embodiment is a preferred implementation, and the reaction chamber is a double-layer metal structure, including an inner chamber and an outer chamber, and a sandwich for the passage of fluid medium is formed between the inner chamber and the outer chamber, and can be directed to the inner chamber and the outer chamber. The gas or liquid that does not react with the reaction chamber, such as air, nitrogen, water, and heat-conducting oil, is introduced into the interlayer to achieve constant temperature regulation, that is, when the temperature is low, the flow rate of the gas or liquid is zero, which can play a role in heat preservation. Increasing the flow of gas or liquid at high temperature can play a role in heat dissipation, which can effectively prevent the metal temperature of the cavity wall from being too high and lose its strength, and can manufacture large-scale high-power devices to meet the needs of large-scale industrial production.
锥形腔的内腔体内壁上衬有隔热层,隔热层的厚度为5毫米,选择这种特定厚度的隔热层,主要是为了在减少等离子体能量耗散的同时,满足功率较小的小型等离子体装置可以采用较薄的隔热层,以减小装置体积、提高集成度、提高启动便利性;以及满足功率较大的大型等离子装置可以采用较大的厚度,以大大降低热量向外传导的速度,减少了需要靠散热带走的能量,减少了向反应腔体的双层金属结构通入流体的流量,更容易实现对反应腔体温度的控制;从而实现在尽量减少系统热耗散的同时,有效避免内腔体金属温度过高而失去强度。同时,由于金属强度得到了保证,整个反应腔的强度、密封性都可以得到有效地保证,使本发明发生器可以安全地适用于高温处理、易燃易爆物料处理、有毒有害物料处理、化工生产,具有广泛地应用前景。The inner wall of the inner cavity of the conical cavity is lined with a thermal insulation layer, and the thickness of the thermal insulation layer is 5 mm. Small and small plasma devices can use thinner thermal insulation layers to reduce device volume, improve integration, and improve startup convenience; and large-scale plasma devices that meet the needs of higher power can use larger thicknesses to greatly reduce heat. The speed of outward conduction reduces the energy that needs to be taken away by heat dissipation, reduces the flow of fluid into the double-layer metal structure of the reaction chamber, and makes it easier to control the temperature of the reaction chamber; At the same time of heat dissipation, it can effectively prevent the metal temperature of the inner cavity from being too high and lose its strength. At the same time, since the metal strength is guaranteed, the strength and sealing performance of the entire reaction chamber can be effectively guaranteed, so that the generator of the present invention can be safely applied to high temperature treatment, inflammable and explosive material treatment, toxic and harmful material treatment, chemical industry production, has a wide range of application prospects.
实施例3Example 3
一种非射流的常压热等离子发生器,包括点火器1和微波源3,还包括反应腔体,所述反应腔体上开有气体通道Ⅰ5和气体通道Ⅱ6,反应腔体包括柱形腔7和位于柱形腔7上方的锥形腔2,所述锥形腔2与柱形腔7连通,柱形腔7上开有微波馈口4,所述微波源3与微波馈口4连接,所述点火器1连接在锥形腔2上。A non-jet atmospheric thermal plasma generator includes an
所述反应腔体为双层金属结构,包括内腔体8和外腔体9,内腔体8和外腔体9之间形成一个用于通入流体介质的夹层10。The reaction chamber is a double-layer metal structure, including an
所述锥形腔2的内腔体8内壁上衬有隔热层11,隔热层11的厚度为60毫米。The inner wall of the
所述隔热层11为氧化锆隔热层。The
所述柱形腔7内固定连接有透波隔板12,透波隔板12与柱形腔7形成微波馈入区,微波馈口4位于微波馈入区内。A wave-transmitting
本实施例为又一较佳实施方式,柱形腔内固定连接有透波隔板,透波隔板与柱形腔形成微波馈入区,微波馈口位于微波馈入区内,通过设置透波隔板隔离出一个相对密封的微波馈入区,能够有效防止等离子体扩散到微波馈入区内,进而避免等离子体在微波馈口附近引发破坏性击穿放电。This embodiment is another preferred implementation. A wave-transmitting baffle is fixedly connected to the cylindrical cavity. The wave-transmitting baffle and the cylindrical cavity form a microwave feeding area. The microwave feeding port is located in the microwave feeding area. The wave baffle isolates a relatively sealed microwave feeding area, which can effectively prevent the plasma from diffusing into the microwave feeding area, thereby preventing the plasma from causing destructive breakdown discharge near the microwave feeding port.
实施例4Example 4
一种非射流的常压热等离子发生器,包括点火器1和微波源3,还包括反应腔体,所述反应腔体上开有气体通道Ⅰ5和气体通道Ⅱ6,反应腔体包括柱形腔7和位于柱形腔7上方的锥形腔2,所述锥形腔2与柱形腔7连通,柱形腔7上开有微波馈口4,所述微波源3与微波馈口4连接,所述点火器1连接在锥形腔2上。A non-jet atmospheric thermal plasma generator includes an
所述反应腔体为双层金属结构,包括内腔体8和外腔体9,内腔体8和外腔体9之间形成一个用于通入流体介质的夹层10。The reaction chamber is a double-layer metal structure, including an
所述锥形腔2的内腔体8内壁上衬有隔热层11,隔热层11的厚度为120毫米。The inner wall of the
所述隔热层11为氧化硅隔热层。The
所述柱形腔7内固定连接有透波隔板12,透波隔板12与柱形腔7形成微波馈入区,微波馈口4位于微波馈入区内。A wave-transmitting
所述透波隔板12的上方设置有透波网孔板13,透波网孔板13固定在柱形腔7的内腔体8内壁上,透波网孔板13和透波隔板12均为水平布置。A wave-transmitting
所述微波源3上设置有用于向微波馈入区通风或加压的微波保护进气口14。The
本实施例为又一较佳实施方式,透波隔板的上方设置有透波网孔板,透波网孔板固定在柱形腔的内腔体内壁上,透波网孔板和透波隔板均为水平布置,当待处理气体从气体通道Ⅰ通入、气体通道Ⅱ排出时,能够使通入的待处理气体均匀分散,并以相对较低的流速继续向上运动;由于待处理流速较低,能够均匀地进入等离子体区域,且不会对等离子体产生较大的扰动,能够保证待处理气体等离子化的稳定性。This embodiment is another preferred implementation. A wave-transmitting mesh plate is arranged above the wave-transmitting baffle, and the wave-transmitting mesh plate is fixed on the inner wall of the inner cavity of the cylindrical cavity. The baffles are arranged horizontally. When the gas to be treated is introduced from the gas channel I and discharged from the gas channel II, the incoming gas to be treated can be dispersed evenly and continue to move upward at a relatively low flow rate; due to the flow rate of the to-be-treated gas It can enter the plasma area uniformly, and it will not cause great disturbance to the plasma, and can ensure the stability of the plasma of the gas to be treated.
实施例5Example 5
一种非射流的常压热等离子发生器,包括点火器1和微波源3,还包括反应腔体,所述反应腔体上开有气体通道Ⅰ5和气体通道Ⅱ6,反应腔体包括柱形腔7和位于柱形腔7上方的锥形腔2,所述锥形腔2与柱形腔7连通,柱形腔7上开有微波馈口4,所述微波源3与微波馈口4连接,所述点火器1连接在锥形腔2上。A non-jet atmospheric thermal plasma generator includes an
所述反应腔体为双层金属结构,包括内腔体8和外腔体9,内腔体8和外腔体9之间形成一个用于通入流体介质的夹层10。The reaction chamber is a double-layer metal structure, including an
所述锥形腔2的内腔体8内壁上衬有隔热层11,隔热层11的厚度为200毫米。The inner wall of the
所述隔热层11为硅隔热层。The
所述柱形腔7内固定连接有透波隔板12,透波隔板12与柱形腔7形成微波馈入区,微波馈口4位于微波馈入区内。A wave-transmitting
所述透波隔板12的上方设置有透波网孔板13,透波网孔板13固定在柱形腔7的内腔体8内壁上,透波网孔板13和透波隔板12均为水平布置。A wave-transmitting
所述柱形腔7上设置有用于向微波馈入区通风或加压的微波保护进气口14。The cylindrical cavity 7 is provided with a microwave
所述柱形腔7上开有微波保护出气口15,微波保护出气口15位于微波馈入区,微波保护出气口15上连接有出气调节阀16。The cylindrical cavity 7 is provided with a microwave
所述点火器1为高频等离子炬。The
所述锥形腔2的锥度为0.001:1。The taper of the
本实施例为又一较佳实施方式。This embodiment is another preferred implementation.
实施例6Example 6
一种非射流的常压热等离子发生器,包括点火器1和微波源3,还包括反应腔体,所述反应腔体上开有气体通道Ⅰ5和气体通道Ⅱ6,反应腔体包括柱形腔7和位于柱形腔7上方的锥形腔2,所述锥形腔2与柱形腔7连通,柱形腔7上开有微波馈口4,所述微波源3与微波馈口4连接,所述点火器1连接在锥形腔2上。A non-jet atmospheric thermal plasma generator includes an
所述反应腔体为双层金属结构,包括内腔体8和外腔体9,内腔体8和外腔体9之间形成一个用于通入流体介质的夹层10。The reaction chamber is a double-layer metal structure, including an
所述锥形腔2的内腔体8内壁上衬有隔热层11,隔热层11的厚度为200毫米。The inner wall of the
所述隔热层11为石墨隔热层。The
所述柱形腔7内固定连接有透波隔板12,透波隔板12与柱形腔7形成微波馈入区,微波馈口4位于微波馈入区内。A wave-transmitting
所述透波隔板12的上方设置有透波网孔板13,透波网孔板13固定在柱形腔7的内腔体8内壁上,透波网孔板13和透波隔板12均为水平布置。A wave-transmitting
所述柱形腔7上设置有用于向微波馈入区通风或加压的微波保护进气口14。The cylindrical cavity 7 is provided with a microwave
所述柱形腔7上开有微波保护出气口15,微波保护出气口15位于微波馈入区,微波保护出气口15上连接有出气调节阀16。The cylindrical cavity 7 is provided with a microwave
所述点火器1为化学火焰炬。The
所述锥形腔2的锥度为0.01:1。The taper of the
本实施例为又一较佳实施方式。This embodiment is another preferred implementation.
实施例7Example 7
一种非射流的常压热等离子发生器,包括点火器1和微波源3,还包括反应腔体,所述反应腔体上开有气体通道Ⅰ5和气体通道Ⅱ6,反应腔体包括柱形腔7和位于柱形腔7上方的锥形腔2,所述锥形腔2与柱形腔7连通,柱形腔7上开有微波馈口4,所述微波源3与微波馈口4连接,所述点火器1连接在锥形腔2上。A non-jet atmospheric thermal plasma generator includes an
所述反应腔体为双层金属结构,包括内腔体8和外腔体9,内腔体8和外腔体9之间形成一个用于通入流体介质的夹层10。The reaction chamber is a double-layer metal structure, including an
所述锥形腔2的内腔体8内壁上衬有隔热层11,隔热层11的厚度为200毫米。The inner wall of the
所述隔热层11为氮化硅隔热层。The
所述柱形腔7内固定连接有透波隔板12,透波隔板12与柱形腔7形成微波馈入区,微波馈口4位于微波馈入区内。A wave-transmitting
所述透波隔板12的上方设置有透波网孔板13,透波网孔板13固定在柱形腔7的内腔体8内壁上,透波网孔板13和透波隔板12均为水平布置。A wave-transmitting
所述柱形腔7上设置有用于向微波馈入区通风或加压的微波保护进气口14。The cylindrical cavity 7 is provided with a microwave
所述柱形腔7上开有微波保护出气口15,微波保护出气口15位于微波馈入区,微波保护出气口15上连接有出气调节阀16。The cylindrical cavity 7 is provided with a microwave
所述点火器1为微波等离子炬。The
所述锥形腔2的锥度为100:1。The taper of the
本实施例为又一较佳实施方式。This embodiment is another preferred implementation.
实施例8Example 8
一种非射流的常压热等离子发生器,包括点火器1和微波源3,还包括反应腔体,所述反应腔体上开有气体通道Ⅰ5和气体通道Ⅱ6,反应腔体包括柱形腔7和位于柱形腔7上方的锥形腔2,所述锥形腔2与柱形腔7连通,柱形腔7上开有微波馈口4,所述微波源3与微波馈口4连接,所述点火器1连接在锥形腔2上。A non-jet atmospheric thermal plasma generator includes an
所述反应腔体为双层金属结构,包括内腔体8和外腔体9,内腔体8和外腔体9之间形成一个用于通入流体介质的夹层10。The reaction chamber is a double-layer metal structure, including an
所述锥形腔2的内腔体8内壁上衬有隔热层11,隔热层11的厚度为200毫米。The inner wall of the
所述隔热层11为氮化碳隔热层。The
所述柱形腔7内固定连接有透波隔板12,透波隔板12与柱形腔7形成微波馈入区,微波馈口4位于微波馈入区内。A wave-transmitting
所述透波隔板12的上方设置有透波网孔板13,透波网孔板13固定在柱形腔7的内腔体8内壁上,透波网孔板13和透波隔板12均为水平布置。A wave-transmitting
所述柱形腔7上设置有用于向微波馈入区通风或加压的微波保护进气口14。The cylindrical cavity 7 is provided with a microwave
所述柱形腔7上开有微波保护出气口15,微波保护出气口15位于微波馈入区,微波保护出气口15上连接有出气调节阀16。The cylindrical cavity 7 is provided with a microwave
所述点火器1为微波等离子炬。The
所述锥形腔2的锥度为600:1。The taper of the
本实施例为又一较佳实施方式。This embodiment is another preferred implementation.
实施例9Example 9
一种非射流的常压热等离子发生器,包括点火器1和微波源3,还包括反应腔体,所述反应腔体上开有气体通道Ⅰ5和气体通道Ⅱ6,反应腔体包括柱形腔7和位于柱形腔7上方的锥形腔2,所述锥形腔2与柱形腔7连通,柱形腔7上开有微波馈口4,所述微波源3与微波馈口4连接,所述点火器1连接在锥形腔2上。A non-jet atmospheric thermal plasma generator includes an
所述反应腔体为双层金属结构,包括内腔体8和外腔体9,内腔体8和外腔体9之间形成一个用于通入流体介质的夹层10。The reaction chamber is a double-layer metal structure, including an
所述锥形腔2的内腔体8内壁上衬有隔热层11,隔热层11的厚度为200毫米。The inner wall of the
所述隔热层11为氮化硼隔热层。The
所述柱形腔7内固定连接有透波隔板12,透波隔板12与柱形腔7形成微波馈入区,微波馈口4位于微波馈入区内。A wave-transmitting
所述透波隔板12的上方设置有透波网孔板13,透波网孔板13固定在柱形腔7的内腔体8内壁上,透波网孔板13和透波隔板12均为水平布置。A wave-transmitting
所述柱形腔7上设置有用于向微波馈入区通风或加压的微波保护进气口14。The cylindrical cavity 7 is provided with a microwave
所述柱形腔7上开有微波保护出气口15,微波保护出气口15位于微波馈入区,微波保护出气口15上连接有出气调节阀16。The cylindrical cavity 7 is provided with a microwave
所述点火器1为高频等离子炬或化学火焰炬或微波等离子炬。The
所述锥形腔2的锥度为1000:1。The taper of the
本实施例为最佳实施方式,反应腔体上开有气体通道Ⅰ和气体通道Ⅱ,反应腔体包括柱形腔和位于柱形腔上方的锥形腔,锥形腔与柱形腔连通,柱形腔上开有微波馈口,微波源与微波馈口连接,点火器连接在锥形腔上,通过独特的采用带有锥形腔的反应腔体结构,有效地将微波原理与温差条件下流体的浮力原理及其运动规律有机的结合在了一起,即使是在微波功率密度较低的条件下形成体积较小的等离子体后,也会由于升温以及密度的变化,在浮力的作用下无需通入辅助气体高速射流进行约束控制,就能向上漂移并汇聚在锥形腔顶部,而不会四处移动,使等离子体存续的温度条件得以保持,更不至于漂散熄灭;更重要的是由于锥形腔上小下大的结构,能在保持等离子体汇聚的同时,又不限制等离子体的体积发生变化,能随着输入微波功率密度加大让等离子体自由膨胀,这样就得到了大体积的等离子体;等离子体聚集在锥形腔中体积虽然会随微波功率密度增加而增加,但等离子体所占锥形空间投影面积按相应直径的平方倍扩张,因此等离子体在垂直方向的扩张较小,只要锥形腔尺寸与输入的总微波功率匹配,即锥形腔足够大,等离子体就不会漂移到反应腔体的柱形腔中;再者,反应腔体的柱形腔内微波功率密度更低,无法提供足够的电场强度使等离子体存在于该区域。基于此,本发明的装置结构可在不加入辅助气体射流约束等离子体的情况下,简单、有效地控制等离子体稳定的存在,且不向微波馈入区、微波馈口扩散,不会引发破坏性击穿放电,保证装置的长期稳定运行。可从气体通道Ⅰ通入、气体通道Ⅱ排出,也可以从气体通道Ⅱ通入、气体通道Ⅰ排出,使待处理气体低速、均匀地通过反应腔体内的等离子体区域。可以有三种技术手段,即:第一,在反应腔体结构特别是锥形腔不变,以及输入微波功率不变的情况下,调节通过等离子体区域的待处理气体流量,加大流量可使等离子体体积增大、温度降低,减小流量可使等离子体体积缩小、温度提高;第二,在反应腔体结构以及锥形腔锥度不变,且待处理气体流量不变的情况下,调节输入微波功率大小,加大微波功率可使等离子体体积增大、温度提高,减小微波功率可使等离子体体积缩小、温度降低;第三,在待处理气体流量不变的情况下,更换不同锥度的锥形腔,减小锥度可在输入微波功率变化时,降低等离子体体积增减幅度和速度、提高等离子体温度增减幅度和速度,加大锥度可在输入微波功率变化时,加大等离子体体积增减幅度和速度、减小等离子体温度增减幅度和速度。此外,可以综合性地采用上述三种技术手段,调节等离子体区域通过气体流量、调节输入微波功率、改变锥形腔锥度这三种手段,结合处理物料的需求,方便、有效地调节等离子体体积和温度,满足实际应用需要。此外,由于锥形腔不同于射流微波等离子体炬,是一个微波功率密度较低的系统,不受微波传输系统限制,可根据最大输入微波功率,加大加长锥形腔,或者缩小缩短锥形腔,可形成单台1kW-1000kW甚至更大微波功率的大体积微波等离子体装置。较现有技术而言,能够实现对待处理气体的充分均匀加热,提高反应效率,形成体积较大而均匀的热等离子体,能够有效防止产生破坏性击穿放电,保证整个发生器的长期运行稳定性。因此,本发明装置不仅调节手段丰富、易于控制、易于工程化,还可以满足大型工业生产需要。This embodiment is the best implementation. The reaction chamber is provided with a gas channel I and a gas channel II. The reaction chamber includes a cylindrical cavity and a conical cavity above the cylindrical cavity. The conical cavity is communicated with the cylindrical cavity. There is a microwave feed port on the cylindrical cavity, the microwave source is connected to the microwave feed port, and the igniter is connected to the conical cavity. Through the unique reaction cavity structure with a conical cavity, the microwave principle and temperature difference conditions are effectively The buoyancy principle of the lower fluid and its motion law are organically combined. Even after a small volume of plasma is formed under the condition of low microwave power density, due to the temperature rise and the change of density, under the action of buoyancy It can drift upward and converge at the top of the conical cavity without the need to introduce a high-speed jet of auxiliary gas for constraining control, without moving around, so that the temperature conditions for the existence of the plasma can be maintained, and it will not drift and extinguish; more importantly, Due to the structure of the conical cavity with a small upper part and a large lower part, it can keep the plasma convergence without restricting the volume of the plasma to change, and can allow the plasma to expand freely with the increase of the input microwave power density. volume of plasma; although the volume of plasma gathered in the conical cavity will increase with the increase of the microwave power density, the projected area of the conical space occupied by the plasma expands by the square of the corresponding diameter, so the expansion of the plasma in the vertical direction is smaller, as long as the size of the conical cavity matches the total input microwave power, that is, the conical cavity is large enough, the plasma will not drift into the cylindrical cavity of the reaction cavity; The microwave power density is lower and cannot provide enough electric field strength for the plasma to exist in this area. Based on this, the device structure of the present invention can simply and effectively control the stable existence of plasma without adding auxiliary gas jets to confine the plasma, and does not diffuse to the microwave feeding area and the microwave feeding port, and will not cause damage to ensure the long-term stable operation of the device. The gas to be treated can pass through the plasma area in the reaction chamber at a low speed and uniformly through the gas passage I and the gas passage II discharge, or the gas passage II and the gas passage I discharge. There are three technical means, namely: First, when the structure of the reaction cavity, especially the conical cavity, remains unchanged, and the input microwave power remains unchanged, adjust the flow rate of the gas to be processed through the plasma area, and increase the flow rate to make The plasma volume increases and the temperature decreases, and reducing the flow rate can reduce the plasma volume and increase the temperature; secondly, when the structure of the reaction chamber and the taper of the conical chamber remain unchanged, and the flow rate of the gas to be treated remains unchanged, adjust Input the microwave power. Increasing the microwave power can increase the plasma volume and increase the temperature. Decreasing the microwave power can reduce the plasma volume and reduce the temperature. Tapered conical cavity, reducing the taper can reduce the amplitude and speed of plasma volume increase and decrease when the input microwave power changes, and increase the amplitude and speed of the plasma temperature increase and decrease, increasing the taper can increase when the input microwave power changes. Plasma volume increase and decrease amplitude and speed, decrease plasma temperature increase and decrease amplitude and speed. In addition, the above three technical means can be comprehensively used to adjust the flow rate of gas passing through the plasma area, adjust the input microwave power, and change the taper of the conical cavity. Combined with the needs of the processing materials, the plasma volume can be adjusted conveniently and effectively. and temperature to meet practical application needs. In addition, because the conical cavity is different from the jet microwave plasma torch, it is a system with low microwave power density and is not limited by the microwave transmission system. According to the maximum input microwave power, the conical cavity can be enlarged and lengthened, or the conical cavity can be shortened and shortened. The cavity can form a single large-volume microwave plasma device with a microwave power of 1kW-1000kW or even greater. Compared with the prior art, it can achieve sufficient and uniform heating of the gas to be treated, improve the reaction efficiency, and form a large and uniform thermal plasma, which can effectively prevent the generation of destructive breakdown discharge and ensure long-term stable operation of the entire generator. sex. Therefore, the device of the present invention not only has abundant adjustment means, is easy to control, and is easy to engineer, but also can meet the needs of large-scale industrial production.
柱形腔上开有微波保护出气口,微波保护出气口位于微波馈入区内,微波保护出气口上连接有出气调节阀,气体从微波保护出气口排出时,通过调节或者关闭微波保护出气口的出气调节阀,就能够提高微波馈入区的气体压强,从而进一步提高微波馈入区的击穿强度。There is a microwave protection gas outlet on the cylindrical cavity, the microwave protection gas outlet is located in the microwave feeding area, and a gas outlet regulating valve is connected to the microwave protection gas outlet. When the gas is discharged from the microwave protection gas outlet, the microwave protection gas outlet is adjusted or closed. The gas outlet regulating valve can increase the gas pressure in the microwave feeding zone, thereby further improving the breakdown strength of the microwave feeding zone.
Claims (10)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113371679A (en) * | 2021-05-27 | 2021-09-10 | 中国矿业大学 | Carbon dioxide-methane plasma high-temperature reforming device and high-temperature reforming method |
CN119155875A (en) * | 2024-11-19 | 2024-12-17 | 安徽立诺威智能科技有限公司 | Normal pressure microwave plasma jet device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001293364A (en) * | 2001-02-19 | 2001-10-23 | Hitachi Ltd | Plasma process equipment |
CN101127413A (en) * | 2007-08-21 | 2008-02-20 | 西安电子科技大学 | Microwave cavity |
CN101829487A (en) * | 2010-06-11 | 2010-09-15 | 天津市环境保护科学研究院 | Microwave plasma decomposition Freon innocent treatment method |
WO2016135899A1 (en) * | 2015-02-25 | 2016-09-01 | 国立大学法人大阪大学 | Microwave plasma vapor-phase reaction device |
CN107801286A (en) * | 2017-11-21 | 2018-03-13 | 清华大学 | A kind of microwave plasma excitated system based on dielectric barrier discharge preionization |
CN108449858A (en) * | 2018-05-18 | 2018-08-24 | 四川大学 | Plasma Jet Generator Based on Coaxial Structure and Terminal Compression |
CN210075674U (en) * | 2019-01-29 | 2020-02-14 | 四川宏图普新机械设备安装服务有限公司 | Non-jet-flow normal-pressure thermal plasma generator |
-
2019
- 2019-01-29 CN CN201910087032.2A patent/CN111491435A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001293364A (en) * | 2001-02-19 | 2001-10-23 | Hitachi Ltd | Plasma process equipment |
CN101127413A (en) * | 2007-08-21 | 2008-02-20 | 西安电子科技大学 | Microwave cavity |
CN101829487A (en) * | 2010-06-11 | 2010-09-15 | 天津市环境保护科学研究院 | Microwave plasma decomposition Freon innocent treatment method |
WO2016135899A1 (en) * | 2015-02-25 | 2016-09-01 | 国立大学法人大阪大学 | Microwave plasma vapor-phase reaction device |
CN107801286A (en) * | 2017-11-21 | 2018-03-13 | 清华大学 | A kind of microwave plasma excitated system based on dielectric barrier discharge preionization |
CN108449858A (en) * | 2018-05-18 | 2018-08-24 | 四川大学 | Plasma Jet Generator Based on Coaxial Structure and Terminal Compression |
CN210075674U (en) * | 2019-01-29 | 2020-02-14 | 四川宏图普新机械设备安装服务有限公司 | Non-jet-flow normal-pressure thermal plasma generator |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113371679A (en) * | 2021-05-27 | 2021-09-10 | 中国矿业大学 | Carbon dioxide-methane plasma high-temperature reforming device and high-temperature reforming method |
CN119155875A (en) * | 2024-11-19 | 2024-12-17 | 安徽立诺威智能科技有限公司 | Normal pressure microwave plasma jet device |
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