CN111477619A - Chip packaging structure and packaging method - Google Patents
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- CN111477619A CN111477619A CN202010470148.7A CN202010470148A CN111477619A CN 111477619 A CN111477619 A CN 111477619A CN 202010470148 A CN202010470148 A CN 202010470148A CN 111477619 A CN111477619 A CN 111477619A
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- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Abstract
本发明揭示了一种芯片的封装结构及封装方法,封装结构包括第一电路板、基板、第一芯片、第一金属球、第二电路板、第二芯片及第二金属球,第一电路板包括相对设置第一表面及第二表面,以及贯穿第一表面及第二表面的通孔;基板位于第一表面并覆盖通孔;第一芯片位于基板面向通孔的一侧,且第一芯片朝向通孔延伸;第一金属球连接基板及第一表面;第二电路板位于第二表面并覆盖通孔;第二芯片位于第二电路板面向通孔的一侧,且第二芯片朝向通孔延伸;第二金属球连接第二电路板及第二表面。本发明的第一金属球及第二金属球不仅能够有效调节第一芯片与第二芯片之间的距离,同时还能实现信号传输。
The invention discloses a packaging structure and packaging method for a chip. The packaging structure includes a first circuit board, a substrate, a first chip, a first metal ball, a second circuit board, a second chip and a second metal ball. The board includes a first surface and a second surface arranged oppositely, and a through hole penetrating the first surface and the second surface; the substrate is located on the first surface and covers the through hole; the first chip is located on the side of the substrate facing the through hole, and the first chip is located on the side of the substrate facing the through hole. The chip extends toward the through hole; the first metal ball is connected to the substrate and the first surface; the second circuit board is located on the second surface and covers the through hole; the second chip is located on the side of the second circuit board facing the through hole, and the second chip faces The through hole extends; the second metal ball is connected to the second circuit board and the second surface. The first metal ball and the second metal ball of the present invention can not only effectively adjust the distance between the first chip and the second chip, but also realize signal transmission.
Description
技术领域technical field
本发明涉及芯片封装技术领域,尤其涉及一种芯片的封装结构及封装方法。The invention relates to the technical field of chip packaging, in particular to a chip packaging structure and a packaging method.
背景技术Background technique
随着科学技术的不断发展,越来越多的电子设备被广泛的应用于人们的日常生活以及工作当中,为人们的日常生活以及工作带来了巨大的便利,成为当今人们不可或缺的重要工具。With the continuous development of science and technology, more and more electronic devices are widely used in people's daily life and work, which has brought great convenience to people's daily life and work, and has become an indispensable and important part of today's people. tool.
电子设备实现预设功能的主要部件是芯片,随着集成电路技术的不断进步,芯片的集成度越来越高,芯片的功能越来越强大,而芯片的尺寸越来越小,故芯片需要通过封装形成封装结构,以便于芯片与外部电路板电连接。The main component of electronic equipment to achieve preset functions is the chip. With the continuous advancement of integrated circuit technology, the integration of the chip is getting higher and higher, the function of the chip is getting more and more powerful, and the size of the chip is getting smaller and smaller, so the chip needs A package structure is formed by packaging, so that the chip is electrically connected to an external circuit board.
现有技术中,参图1,封装结构100包括第一芯片11及第二芯片12,需要精确控制第一芯片11与第二芯片12之间的距离以实现第一芯片11与第二芯片12之间的精准作用。In the prior art, referring to FIG. 1 , the
例如,第一芯片11为发射器,这里以激光发射器为例,其具有亮度高、方向性好、单色性好和相干性好等光学特性,特别的,由于激光的方向性好的特点,使得激光成为条码扫描的首选光源。For example, the
条码扫描过程中,除了激光芯片外,还需要实现激光芯片出射光线扫描的扫描设备,第二芯片12为起到扫描作用的衍射光学元件。In the barcode scanning process, in addition to the laser chip, a scanning device for scanning light emitted from the laser chip is also required, and the
现有技术中的第一芯片11固定于框架13上,第二芯片12固定于基板14上,框架13的端部通过胶水15实现与基板14的相互固定,此时,主要是通过控制胶水15的厚度来调节第一芯片11与第二芯片12之间的距离B,该调节方式需要用到专用的设备和材料,成本偏高且加工时间长,良率低。In the prior art, the
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种可提高光学精度、组装效率,降低成本的芯片的封装结构及封装方法。The purpose of the present invention is to provide a chip packaging structure and packaging method which can improve optical precision, assembly efficiency and reduce cost.
为实现上述发明目的之一,本发明一实施方式提供一种芯片的封装结构,包括:To achieve one of the above purposes of the invention, an embodiment of the present invention provides a chip packaging structure, including:
第一电路板,包括相对设置第一表面及第二表面,以及贯穿所述第一表面及所述第二表面的通孔;a first circuit board, comprising a first surface and a second surface disposed opposite to each other, and a through hole penetrating the first surface and the second surface;
基板,位于所述第一表面并覆盖所述通孔;a substrate, located on the first surface and covering the through hole;
第一芯片,位于所述基板面向所述通孔的一侧,且所述第一芯片朝向所述通孔延伸;a first chip, located on the side of the substrate facing the through hole, and the first chip extends toward the through hole;
第一金属球,连接所述基板及所述第一表面;a first metal ball, connected to the substrate and the first surface;
第二电路板,位于所述第二表面并覆盖所述通孔;a second circuit board, located on the second surface and covering the through hole;
第二芯片,位于所述第二电路板面向所述通孔的一侧,且所述第二芯片朝向所述通孔延伸;a second chip, located on the side of the second circuit board facing the through hole, and the second chip extends toward the through hole;
第二金属球,连接所述第二电路板及所述第二表面。The second metal ball is connected to the second circuit board and the second surface.
作为本发明一实施方式的进一步改进,所述第一金属球及所述第二金属球均为金球。As a further improvement of an embodiment of the present invention, both the first metal ball and the second metal ball are gold balls.
作为本发明一实施方式的进一步改进,所述第一芯片包括发射器,所述第二芯片包括衍射光学元件。As a further improvement of an embodiment of the present invention, the first chip includes an emitter, and the second chip includes a diffractive optical element.
作为本发明一实施方式的进一步改进,所述封装结构还包括连接所述基板的侧缘及所述第一表面的第一封装胶,以及连接所述第二电路板的侧缘及所述第二表面的第二封装胶。As a further improvement of an embodiment of the present invention, the package structure further includes a first encapsulant for connecting the side edge of the substrate and the first surface, and connecting the side edge of the second circuit board and the first surface. The second encapsulant on the two surfaces.
作为本发明一实施方式的进一步改进,所述基板为透明基板。As a further improvement of an embodiment of the present invention, the substrate is a transparent substrate.
作为本发明一实施方式的进一步改进,所述基板面向所述通孔的一侧设有金属线路层,所述第一电路板包括第一互联线路,所述第二电路板包括第二互联线路及第三互联线路,所述第一芯片通过第一打线电性连接所述金属线路层,所述金属线路层通过所述第一金属球电性连接所述第一互联线路,所述第一互联线路通过所述第二金属球电性连接所述第二互联线路,所述第二芯片通过第二打线电性连接所述第三互联线路。As a further improvement of an embodiment of the present invention, the side of the substrate facing the through hole is provided with a metal circuit layer, the first circuit board includes a first interconnection circuit, and the second circuit board includes a second interconnection circuit and a third interconnection circuit, the first chip is electrically connected to the metal circuit layer through a first bonding wire, the metal circuit layer is electrically connected to the first interconnection circuit through the first metal ball, and the first metal circuit layer is electrically connected to the first interconnection circuit through the first metal ball. An interconnection circuit is electrically connected to the second interconnection circuit through the second metal ball, and the second chip is electrically connected to the third interconnection circuit through a second bonding wire.
作为本发明一实施方式的进一步改进,所述第二电路板远离所述通孔的一侧设有第二连接端子及第三连接端子,所述第二连接端子导通所述第二互联线路,所述第三连接端子导通所述第三互联线路,所述第二电路板通过所述第二连接端子及所述第三连接端子电性连接外部电路板。As a further improvement of an embodiment of the present invention, a side of the second circuit board away from the through hole is provided with a second connection terminal and a third connection terminal, and the second connection terminal conducts the second interconnection circuit and the third connection terminal conducts the third interconnection circuit, and the second circuit board is electrically connected to an external circuit board through the second connection terminal and the third connection terminal.
作为本发明一实施方式的进一步改进,所述第一电路板及所述第二电路板均为印刷电路板。As a further improvement of an embodiment of the present invention, the first circuit board and the second circuit board are both printed circuit boards.
为实现上述发明目的之一,本发明一实施方式提供一种芯片的封装方法,包括步骤:To achieve one of the above purposes of the invention, an embodiment of the present invention provides a method for packaging a chip, comprising the steps of:
将第一芯片固定于基板,并于所述基板上形成第一金属球而构造为第一部分;fixing the first chip on a substrate, and forming a first metal ball on the substrate to form a first part;
将第二芯片固定于第二电路板,并于所述第二电路板上形成第二金属球而构造为第二部分;fixing the second chip on the second circuit board, and forming a second metal ball on the second circuit board to form a second part;
于第一电路板上形成贯穿所述第一电路板上相对设置的第一表面及第二表面的通孔;forming a through hole on the first circuit board penetrating the first surface and the second surface oppositely disposed on the first circuit board;
通过倒装工艺将所述第一部分结合至所述第一电路板的第一表面,所述第一芯片朝向所述通孔延伸;bonding the first portion to the first surface of the first circuit board through a flip-chip process, the first chip extending toward the through hole;
通过倒装工艺将所述第二部分结合至所述第一电路板的第二表面,所述第二芯片朝向所述通孔延伸。The second portion is bonded to the second surface of the first circuit board by a flip-chip process, and the second chip extends toward the through hole.
作为本发明一实施方式的进一步改进,步骤“通过倒装工艺将所述第二部分结合至所述第一电路板的第二表面,所述第二芯片朝向所述通孔延伸”还包括:As a further improvement of an embodiment of the present invention, the step of "bonding the second part to the second surface of the first circuit board through a flip-chip process, the second chip extending toward the through hole" further includes:
获取所述第一电路板远离所述第一部分的第二表面与所述第一芯片远离所述基板的第一作用面之间的第一距离,并根据所述第二芯片的第二作用面与所述第一芯片的所述第一作用面之间的目标距离以及所述第一距离获取所述第二金属球的期望高度;Obtain the first distance between the second surface of the first circuit board away from the first part and the first active surface of the first chip away from the substrate, and according to the second active surface of the second chip The desired height of the second metal ball is obtained from the target distance from the first active surface of the first chip and the first distance;
在倒装工艺过程中通过控制焊接力度使得所述第二金属球的成型高度为所述期望高度。During the flip-chip process, the forming height of the second metal ball is controlled to the desired height by controlling the welding force.
作为本发明一实施方式的进一步改进,步骤“将第一芯片固定于基板,并于所述基板上形成第一金属球而构造为第一部分”具体包括:As a further improvement of an embodiment of the present invention, the step "fixing the first chip on the substrate, and forming the first metal ball on the substrate to form the first part" specifically includes:
于基板上形成金属线路层;forming a metal circuit layer on the substrate;
通过固晶工艺将所述第一芯片固定于所述基板设有所述金属线路层的一侧;Fixing the first chip on the side of the substrate on which the metal circuit layer is provided by a die bonding process;
通过打线工艺电性连接所述第一芯片及所述金属线路层;The first chip and the metal circuit layer are electrically connected through a wire bonding process;
形成电性连接所述金属线路层的第一金属球而构造为第一部分。A first metal ball electrically connected to the metal circuit layer is formed to form a first portion.
作为本发明一实施方式的进一步改进,步骤“将第二芯片固定于第二电路板,并于所述第二电路板上形成第二金属球而构造为第二部分”具体包括:As a further improvement of an embodiment of the present invention, the step of "fixing the second chip on the second circuit board, and forming a second metal ball on the second circuit board to form a second part" specifically includes:
通过固晶工艺将所述第二芯片固定于所述第二电路板;Fixing the second chip on the second circuit board through a die bonding process;
通过打线工艺电性连接所述第二芯片及所述第二电路板中的第三互联线路;Electrically connecting the second chip and the third interconnecting circuit in the second circuit board through a wire bonding process;
形成电性连接所述第二电路板中的第二互联线路的第二金属球而构造为第二部分。A second metal ball is formed to be electrically connected to the second interconnecting circuit in the second circuit board and is configured as a second portion.
作为本发明一实施方式的进一步改进,步骤“通过倒装工艺将所述第一部分结合至所述第一电路板的第一表面,所述第一芯片朝向所述通孔延伸;通过倒装工艺将所述第二部分结合至所述第一电路板的第二表面,所述第二芯片朝向所述通孔延伸”具体包括:As a further improvement of an embodiment of the present invention, the step "bonding the first part to the first surface of the first circuit board by a flip-chip process, the first chip extending toward the through hole; by a flip-chip process Bonding the second part to the second surface of the first circuit board, the second chip extending toward the through hole "specifically includes:
通过倒装工艺使得所述第一金属球电性连接所述第一电路板中的第一互联线路;The first metal ball is electrically connected to the first interconnection circuit in the first circuit board through a flip-chip process;
通过倒装工艺使得第二金属球电性连接所述第一互联线路及所述第二电路板中的第二互联线路。The second metal ball is electrically connected to the first interconnection circuit and the second interconnection circuit in the second circuit board through a flip-chip process.
作为本发明一实施方式的进一步改进,所述方法还包括步骤:As a further improvement of an embodiment of the present invention, the method further includes the steps:
于所述第二电路板远离所述通孔的一侧形成导通所述第二互联线路的第二连接端子以及导通所述第三互联线路的第三连接端子。A second connection terminal for conducting the second interconnection circuit and a third connection terminal for conducting the third interconnection circuit are formed on the side of the second circuit board away from the through hole.
与现有技术相比,本发明的有益效果在于:本发明一实施方式的第一金属球及第二金属球的高度可通过焊接力度有效控制,也就是说,通过调整焊接力度可有效控制第一金属球及第二金属球的高度,从而有效控制第一芯片与第二芯片之间的距离,大大提高第一芯片与第二芯片之间的光学精度,且可大大提高组装效率,降低成本;另外,可通过第一金属球及第二金属球直接实现基板、第一电路板及第二电路板之间的信号传输,换句话说,第一金属球及第二金属球不仅能够有效调节第一芯片与第二芯片之间的距离,同时还能实现信号传输。Compared with the prior art, the beneficial effect of the present invention is that the heights of the first metal ball and the second metal ball in one embodiment of the present invention can be effectively controlled by the welding strength, that is, the first metal ball can be effectively controlled by adjusting the welding strength. The height of a metal ball and a second metal ball can effectively control the distance between the first chip and the second chip, greatly improve the optical accuracy between the first chip and the second chip, and greatly improve the assembly efficiency and reduce the cost. ; In addition, the signal transmission between the substrate, the first circuit board and the second circuit board can be directly realized through the first metal ball and the second metal ball. In other words, the first metal ball and the second metal ball can not only effectively adjust the The distance between the first chip and the second chip can also realize signal transmission.
附图说明Description of drawings
图1是现有技术中封装结构示意图;1 is a schematic diagram of a package structure in the prior art;
图2是本发明一实施方式的封装结构示意图;2 is a schematic diagram of a package structure according to an embodiment of the present invention;
图3是本发明一实施方式的封装方法步骤图;3 is a step diagram of a packaging method according to an embodiment of the present invention;
图4至图13是本发明一实施方式的封装方法各个步骤的示意图。4 to 13 are schematic diagrams of various steps of a packaging method according to an embodiment of the present invention.
具体实施方式Detailed ways
以下将结合附图所示的具体实施方式对本发明进行详细描述。但这些实施方式并不限制本发明,本领域的普通技术人员根据这些实施方式所做出的结构、方法、或功能上的变换均包含在本发明的保护范围内。The present invention will be described in detail below with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and structural, method, or functional changes made by those skilled in the art according to these embodiments are all included in the protection scope of the present invention.
在本发明的各个图示中,为了便于图示,结构或部分的某些尺寸会相对于其它结构或部分夸大,因此,仅用于图示本发明的主题的基本结构。In various drawings of the present invention, some dimensions of structures or parts are exaggerated relative to other structures or parts for convenience of illustration, and thus, are only used to illustrate the basic structure of the subject matter of the present invention.
结合图2,为本发明一实施方式的芯片的封装结构200示意图。2 is a schematic diagram of a
封装结构200包括第一电路板20、基板30、第一芯片31、第一金属球32、第二电路板40、第二芯片41及第二金属球42。The
第一电路板20包括相对设置第一表面21及第二表面22,以及贯穿第一表面21及第二表面22的通孔23。The
基板30位于第一表面21并覆盖通孔23。The
第一芯片31位于基板30面向通孔23的一侧,且第一芯片31朝向通孔23延伸。The
第一金属球32连接基板30及第一表面21。The
第二电路板40位于第二表面22并覆盖通孔23。The
第二芯片41位于第二电路板40面向通孔23的一侧,且第二芯片41朝向通孔23延伸。The
第二金属球42连接第二电路板40及第二表面22。The
这里,基板30与第一电路板20之间通过第一金属球32连接,第二电路板40与第一电路板20之间通过第二金属球42连接,第一金属球32及第二金属球42的高度可通过焊接力度有效控制,也就是说,通过调整焊接力度可有效控制第一金属球32及第二金属球42的高度,从而有效控制第一芯片31与第二芯片41之间的距离,大大提高第一芯片31与第二芯片41之间的光学精度,且可大大提高组装效率,降低成本。Here, the
另外,基板30与第一电路板20之间、第一电路板20与第二电路板40之间分别通过具有导电性能的第一金属球32及第二金属球42连接,可通过第一金属球32及第二金属球42直接实现基板30、第一电路板20及第二电路板40之间的信号传输,换句话说,第一金属球32及第二金属球42不仅能够有效调节第一芯片31与第二芯片41之间的距离,同时还能实现信号传输。In addition, the
需要说明的是,第一芯片31与第二芯片41于竖直方向X上对准设置,以使得第一芯片31与第二芯片41之间可进行光线传输,竖直方向X定义为基板30、第一电路板20及第二电路板40的叠加方向。It should be noted that the
另外,“第一金属球32连接基板30”是指第一金属球32位于基板30的一侧,第一金属球32与基板30之间可以是直接连接或者是间接连接,换句话说,本实施方式所述的一个部件连接、固定于或位于另一个部件,是指两个部件之间直接连接或者是间接连接。In addition, "the
在本实施方式中,第一芯片31包括发射器31,第二芯片41包括衍射光学元件41(Diffractive Optical Elements,DOE),第一芯片31及第二芯片41相互配合以实现条码扫描,但不以此为限。In this embodiment, the
当衍射光学元件41接收到发射器31发送的向下的扫描光线后,衍射光学元件41将扫描光线分为多束扫描光而达到扫描效果,此时,需要有效控制发射器31的发射面与衍射光学元件41的接收面之间的距离而使得衍射光学元件41可以完整接收扫描光线,即需要控制第一芯片31的第一作用面311与第二芯片41的第二作用面411之间的目标距离H,本实施方式通过第一金属球32及第二金属球42可实现目标距离H的有效控制。When the diffractive
在本实施方式中,基板30为透明基板,可使得衍射光学元件41发出的多束扫描光传输至封装结构100的外部。In this embodiment, the
第一金属球32及第二金属球42均为金球,可有效提高信号传输性能。The
第一电路板20及第二电路板40均为印刷电路板,以保证封装结构100的整体强度以及目标距离H调节过程的精准度。The
在本实施方式中,第一电路板20包括第一互联线路201,第一互联线路201为第一电路板20本身带有的线路,第一互联线路201分别延伸至第一电路板20的第一表面21及第二表面22;第二电路板40包括第二互联线路401及第三互联线路402,第二互联线路401及第三互联线路402为第二电路板40本身带有的线路,第二互联线路401及第三互联线路402均分别延伸至第二电路板40的上表面43及下表面44。In this embodiment, the
第二电路板40远离通孔23的一侧(即第二电路板40的下表面44)设有第二连接端子4011及第三连接端子4021,第二连接端子4011导通第二互联线路401,第三连接端子4021导通第三互联线路402,第二电路板40通过第二连接端子4011及第三连接端子4021电性连接外部电路板,外部电路板例如为系统控制板。The side of the
基板30面向通孔23的一侧设有金属线路层33,第一芯片31通过第一打线34电性连接金属线路层33。The side of the
这里,金属线路层33包括依次连接基板30的保护层301、重布线层302及阻焊层303,保护层301的热膨胀系数可介于基板30及重布线层302之间,但不以此为限,保护层301的设置可避免重布线层301及基板30在应力拉扯下相互分离。Here, the
第一金属球32的一端电性连接阻焊层303,第一芯片31通过第一打线34电性连接重布线层302。One end of the
金属线路层33通过第一金属球32电性连接第一互联线路201,第一互联线路201通过第二金属球42电性连接第二互联线路401,如此,第一芯片31可依次经过第一打线34、金属线路层33、第一金属球32、第一互联线路201、第二互联线路401及第二连接端子4011而电性连接至外部电路板,从而可通过外部电路板实现对第一芯片31的控制,例如,控制第一芯片31的开机关机操作等。The
第二芯片41通过第二打线45电性连接第三互联线路402,如此,第二芯片41可依次通过第二打线45、第三互联线路402及第三连接端子4021而电性连接至外部电路板,从而可通过外部电路板实现对第二芯片41的控制,例如,控制第二芯片41的扫描方向、扫描范围等。The
可以看到,本实施方式通过第一金属球32及第二金属球42可实现基板30、第一电路板20及第二电路板40之间的导通,从而可将第一芯片31及第二芯片41电性连接至外部电路板,通过简单的结构便实现了芯片的控制。It can be seen that in this embodiment, conduction between the
在本实施方式中,封装结构100还包括连接基板30的侧缘304及第一电路板20的第一表面21的第一封装胶35,以及连接第二电路板40的侧缘403及第二表面22的第二封装胶46,第一封装胶35的设置可提高基板30与第一电路板20之间配合的稳定性,同样的,第二封装胶46的设置可提高第二电路板40与第一电路板20之间配合的稳定性。In this embodiment, the
本发明一实施方式还提供一种芯片的封装方法,结合前述封装结构100的说明以及图3至图13,芯片的封装方法包括步骤:An embodiment of the present invention also provides a method for packaging a chip. With reference to the description of the
S1:结合图4至图7,将第一芯片31固定于基板30,并于基板30上形成第一金属球32而构造为第一部分P1;S1 : with reference to FIGS. 4 to 7 , fix the
步骤S1具体包括:Step S1 specifically includes:
于基板30上形成金属线路层33;forming a
这里,金属线路层33包括依次连接基板30的保护层301、重布线层302及阻焊层303。Here, the
通过固晶工艺将第一芯片31固定于基板30设有金属线路层33的一侧;The
通过打线工艺电性连接第一芯片31及金属线路层33;The
这里,第一芯片31通过第一打线34电性连接重布线层302。Here, the
形成电性连接金属线路层33的第一金属球32而构造为第一部分P1。The
这里,第一金属球32的一端电性连接阻焊层303,此时的第一部分P1包括基板30、第一芯片31、第一金属球32、金属线路层33及第一打线34。Here, one end of the
S3:结合图8及图9,将第二芯片41固定于第二电路板40,并于第二电路板40上形成第二金属球42而构造为第二部分P2;S3: With reference to FIG. 8 and FIG. 9, the
步骤S3具体包括:Step S3 specifically includes:
通过固晶工艺将第二芯片41固定于第二电路板40;The
这里,第二芯片41固定于第二电路板40的上表面43。Here, the
通过打线工艺电性连接第二芯片41及第二电路板40中的第三互联线路402;The
这里,第二芯片41通过第二打线45电性连接第三互联线路402。Here, the
形成电性连接第二电路板40中的第二互联线路401的第二金属球42而构造为第二部分P2。The
这里,第二金属球42的一端电性连接第二互联线路401,此时的第二部分P2包括第二电路板40、第二芯片41、第二金属球42及第二打线45。Here, one end of the
S5:结合图10,于第一电路板20上形成贯穿第一电路板20上相对设置的第一表面21及第二表面22的通孔23;S5: Referring to FIG. 10, forming a through
S7:结合图11,通过倒装工艺将第一部分P1结合至第一电路板20的第一表面21,第一芯片31朝向通孔23延伸;S7: Referring to FIG. 11, the first part P1 is bonded to the
S9:结合图12,通过倒装工艺将第二部分P2结合至第一电路板20的第二表面22,第二芯片41朝向通孔23延伸。S9 : Referring to FIG. 12 , the second part P2 is bonded to the
具体的,步骤S7、S9为:通过倒装工艺使得第一金属球32电性连接第一电路板20中的第一互联线路201,同样的,通过倒装工艺使得第二金属球42电性连接第一电路板20中的第一互联线路201及第二电路板40中的第二互联线路401,如此,便实现了第一部分P1与第一电路板20的互联,以及第二部分P2与第一电路板20的互联。Specifically, in steps S7 and S9, the
这里,需要说明的是,为了提高基板30与第一电路板20之间的配合的稳定性,以及提高第一电路板20与第二电路板40之间配合的稳定性,步骤S7及S9还包括:Here, it should be noted that, in order to improve the stability of the cooperation between the
形成连接基板30的侧缘304及第一电路板20的第一表面21的第一封装胶35,形成连接第二电路板40的侧缘403及第二表面22的第二封装胶46。The
步骤S7、S9的具体操作流程为:The specific operation flow of steps S7 and S9 is as follows:
获取第一电路板20远离第一部分P1的第二表面22与第一芯片31远离基板30的第一作用面311之间的第一距离H1,并根据第二芯片41的第二作用面411与第一芯片31的第一作用面311之间的目标距离H以及第一距离H1获取第二金属球42的期望高度H’;Obtain the first distance H1 between the
在倒装工艺过程中通过控制焊接力度使得第二金属球42的成型高度为期望高度H’。During the flip-chip process, the forming height of the
这里,假设第一芯片31的第一作用面311与基板30靠近通孔23一侧的表面之间的距离为H2,第一金属球32与基板30靠近通孔23一侧的表面之间的距离为H3,第一电路板20的厚度为H4,那么,第一距离H1=H4+H3-H2,可通过控制制程、材料、焊接力度等有效控距离H1、H2,而后通过选择一定规格的第一电路板20而获取厚度H4,如此,便可得到第一距离H1,实际操作中,可通过一定的制程、材料、焊接力度等使得距离H1、H2为定值,此时仅需选择已知厚度H4的第一电路板20便可直接获取第一距离H1。Here, it is assumed that the distance between the first working
而后,根据不同的封装结构100,第二芯片41的第二作用面411与第一芯片31的第一作用面311之间的目标距离H是不同的,此时可预先获取到对应封装结构100的目标距离H,根据目标距离H以及第一距离H1便可获取第二金属球42的期望高度H’。Then, according to
这里,假设第二芯片41的第二作用面411与第二电路板40的上表面43之间的距离为H5,那么,第二金属球42的期望高度H’=H+H5-H1,实际操作中,可通过一定的制程、材料等使得距离H5为定值,此时便可根据前述获取的第一距离H1直接获取第二金属球42的期望高度H’。Here, assuming that the distance between the second
当获取第二金属球42的期望高度H’后,便可在步骤S9的倒装工艺过程中控制焊接力度,使得第二金属球42的成型高度为期望高度H’,此时便保证了第二芯片41的第二作用面411与第一芯片31的第一作用面311之间的距离为所期望的目标距离H。After obtaining the desired height H' of the
另外,本实施方式的工艺方法还包括步骤:In addition, the process method of this embodiment also includes the steps:
S11:结合图13,于第二电路板40远离通孔23的一侧形成导通第二互联线路401的第二连接端子4011,以及导通第三互联线路402的第三连接端子4021。S11 : Referring to FIG. 13 , on the side of the
可以看到,基板30与第一电路板20之间通过第一金属球32连接,第二电路板40与第一电路板20之间通过第二金属球42连接,通过调整焊接力度可有效控制第二金属球42的期望高度H’,从而有效控制第一芯片31与第二芯片41之间的目标距离H,大大提高第一芯片31与第二芯片41之间的光学精度,且可大大提高组装效率,降低成本。It can be seen that the
另外,第一芯片31可依次经过第一打线34、金属线路层33、第一金属球32、第一互联线路201、第二互联线路401及第二连接端子4011而电性连接至外部电路板,从而可通过外部电路板实现对第一芯片31的控制,例如,控制第一芯片31的开机关机操作等,第二芯片41通过第二打线45电性连接第三互联线路402,如此,第二芯片41可依次通过第二打线45、第三互联线路402及第三连接端子4021而电性连接至外部电路板,从而可通过外部电路板实现对第二芯片41的控制,例如,控制第二芯片41的扫描方向、扫描范围等,本实施方式通过第一金属球32及第二金属球42可实现基板30、第一电路板20及第二电路板40之间的导通,从而可将第一芯片31及第二芯片41电性连接至外部电路板,通过简单的结构便实现了芯片的控制。In addition, the
本实施方式的工艺方法的其他说明可以参考前述封装结构100的说明,在此不再赘述。For other descriptions of the process method in this embodiment, reference may be made to the description of the
需要强调的是,上述步骤标号S1、S3、S5、S7、S9、S11并不实际限定步骤的前后关系,例如,第二部分P2成型步骤S3可位于第一部分P1的成型步骤S1之前,另外,也可先将第二部分P2与第一电路板20结合,而后再通过调整焊接力度控制第一金属球32的高度而控制第一芯片31与第二芯片41之间的目标距离H。It should be emphasized that the above step labels S1, S3, S5, S7, S9, and S11 do not actually limit the context of the steps. For example, the second part P2 forming step S3 can be located before the first part P1 forming step S1, in addition, The second part P2 can also be combined with the
应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施方式中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。It should be understood that although this specification is described in terms of embodiments, not every embodiment only includes an independent technical solution, and this description in the specification is only for the sake of clarity, and those skilled in the art should take the specification as a whole, and each The technical solutions in the embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
上文所列出的一系列的详细说明仅仅是针对本发明的可行性实施方式的具体说明,它们并非用以限制本发明的保护范围,凡未脱离本发明技艺精神所作的等效实施方式或变更均应包含在本发明的保护范围之内。The series of detailed descriptions listed above are only specific descriptions for the feasible embodiments of the present invention, and they are not used to limit the protection scope of the present invention. Changes should all be included within the protection scope of the present invention.
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040058473A1 (en) * | 2001-02-01 | 2004-03-25 | Gregor Feiertag | Substrate for an electric component and method for the production thereof |
JP2005316043A (en) * | 2004-04-28 | 2005-11-10 | Yokohama Tlo Co Ltd | Micromirror element and method of manufacturing the same |
JP2009184070A (en) * | 2008-02-06 | 2009-08-20 | Olympus Corp | Mems device and method of manufacturing method the same |
TW201317622A (en) * | 2011-08-30 | 2013-05-01 | Qualcomm Mems Technologies Inc | Die-cut through-glass via and methods for forming same |
JP2014090066A (en) * | 2012-10-30 | 2014-05-15 | International Business Maschines Corporation | Solder bonding for controlling height between optical waveguide and semiconductor chip |
CN105448946A (en) * | 2016-01-02 | 2016-03-30 | 北京工业大学 | Image sensing chip packaging structure and realization process |
CN106207743A (en) * | 2016-08-25 | 2016-12-07 | 武汉光迅科技股份有限公司 | A kind of for grating coupled laser structure and method for packing |
CN109103743A (en) * | 2018-09-21 | 2018-12-28 | 苏州晶方半导体科技股份有限公司 | A kind of encapsulating structure and its packaging method of laser chip |
CN109119885A (en) * | 2018-08-24 | 2019-01-01 | 苏州晶方半导体科技股份有限公司 | A kind of laser chip encapsulating structure and its packaging method |
CN212136445U (en) * | 2020-05-28 | 2020-12-11 | 苏州晶方半导体科技股份有限公司 | Packaging structure of chip |
-
2020
- 2020-05-28 CN CN202010470148.7A patent/CN111477619A/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040058473A1 (en) * | 2001-02-01 | 2004-03-25 | Gregor Feiertag | Substrate for an electric component and method for the production thereof |
JP2005316043A (en) * | 2004-04-28 | 2005-11-10 | Yokohama Tlo Co Ltd | Micromirror element and method of manufacturing the same |
JP2009184070A (en) * | 2008-02-06 | 2009-08-20 | Olympus Corp | Mems device and method of manufacturing method the same |
TW201317622A (en) * | 2011-08-30 | 2013-05-01 | Qualcomm Mems Technologies Inc | Die-cut through-glass via and methods for forming same |
JP2014090066A (en) * | 2012-10-30 | 2014-05-15 | International Business Maschines Corporation | Solder bonding for controlling height between optical waveguide and semiconductor chip |
CN105448946A (en) * | 2016-01-02 | 2016-03-30 | 北京工业大学 | Image sensing chip packaging structure and realization process |
CN106207743A (en) * | 2016-08-25 | 2016-12-07 | 武汉光迅科技股份有限公司 | A kind of for grating coupled laser structure and method for packing |
CN109119885A (en) * | 2018-08-24 | 2019-01-01 | 苏州晶方半导体科技股份有限公司 | A kind of laser chip encapsulating structure and its packaging method |
CN109103743A (en) * | 2018-09-21 | 2018-12-28 | 苏州晶方半导体科技股份有限公司 | A kind of encapsulating structure and its packaging method of laser chip |
CN212136445U (en) * | 2020-05-28 | 2020-12-11 | 苏州晶方半导体科技股份有限公司 | Packaging structure of chip |
Non-Patent Citations (2)
Title |
---|
""Cu-Cu Direct Bonding Technology Using Ultrasonic Vibration for Flip-chip Interconnection"", 《2015 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING AND IMAPS ALL ASIA CONFERENCE》, 13 September 2016 (2016-09-13), pages 468 - 472 * |
赵丽花等: ""基于计算机视觉技术的BGA芯片精准焊接定位的研究"", no. 06, 15 December 2011 (2011-12-15), pages 67 - 70 * |
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