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CN111477619A - Chip packaging structure and packaging method - Google Patents

Chip packaging structure and packaging method Download PDF

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Publication number
CN111477619A
CN111477619A CN202010470148.7A CN202010470148A CN111477619A CN 111477619 A CN111477619 A CN 111477619A CN 202010470148 A CN202010470148 A CN 202010470148A CN 111477619 A CN111477619 A CN 111477619A
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chip
circuit board
circuit
substrate
metal
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吴明轩
杨剑宏
王蔚
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China Wafer Level CSP Co Ltd
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China Wafer Level CSP Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

本发明揭示了一种芯片的封装结构及封装方法,封装结构包括第一电路板、基板、第一芯片、第一金属球、第二电路板、第二芯片及第二金属球,第一电路板包括相对设置第一表面及第二表面,以及贯穿第一表面及第二表面的通孔;基板位于第一表面并覆盖通孔;第一芯片位于基板面向通孔的一侧,且第一芯片朝向通孔延伸;第一金属球连接基板及第一表面;第二电路板位于第二表面并覆盖通孔;第二芯片位于第二电路板面向通孔的一侧,且第二芯片朝向通孔延伸;第二金属球连接第二电路板及第二表面。本发明的第一金属球及第二金属球不仅能够有效调节第一芯片与第二芯片之间的距离,同时还能实现信号传输。

Figure 202010470148

The invention discloses a packaging structure and packaging method for a chip. The packaging structure includes a first circuit board, a substrate, a first chip, a first metal ball, a second circuit board, a second chip and a second metal ball. The board includes a first surface and a second surface arranged oppositely, and a through hole penetrating the first surface and the second surface; the substrate is located on the first surface and covers the through hole; the first chip is located on the side of the substrate facing the through hole, and the first chip is located on the side of the substrate facing the through hole. The chip extends toward the through hole; the first metal ball is connected to the substrate and the first surface; the second circuit board is located on the second surface and covers the through hole; the second chip is located on the side of the second circuit board facing the through hole, and the second chip faces The through hole extends; the second metal ball is connected to the second circuit board and the second surface. The first metal ball and the second metal ball of the present invention can not only effectively adjust the distance between the first chip and the second chip, but also realize signal transmission.

Figure 202010470148

Description

芯片的封装结构及封装方法Chip packaging structure and packaging method

技术领域technical field

本发明涉及芯片封装技术领域,尤其涉及一种芯片的封装结构及封装方法。The invention relates to the technical field of chip packaging, in particular to a chip packaging structure and a packaging method.

背景技术Background technique

随着科学技术的不断发展,越来越多的电子设备被广泛的应用于人们的日常生活以及工作当中,为人们的日常生活以及工作带来了巨大的便利,成为当今人们不可或缺的重要工具。With the continuous development of science and technology, more and more electronic devices are widely used in people's daily life and work, which has brought great convenience to people's daily life and work, and has become an indispensable and important part of today's people. tool.

电子设备实现预设功能的主要部件是芯片,随着集成电路技术的不断进步,芯片的集成度越来越高,芯片的功能越来越强大,而芯片的尺寸越来越小,故芯片需要通过封装形成封装结构,以便于芯片与外部电路板电连接。The main component of electronic equipment to achieve preset functions is the chip. With the continuous advancement of integrated circuit technology, the integration of the chip is getting higher and higher, the function of the chip is getting more and more powerful, and the size of the chip is getting smaller and smaller, so the chip needs A package structure is formed by packaging, so that the chip is electrically connected to an external circuit board.

现有技术中,参图1,封装结构100包括第一芯片11及第二芯片12,需要精确控制第一芯片11与第二芯片12之间的距离以实现第一芯片11与第二芯片12之间的精准作用。In the prior art, referring to FIG. 1 , the package structure 100 includes a first chip 11 and a second chip 12 , and the distance between the first chip 11 and the second chip 12 needs to be precisely controlled to realize the first chip 11 and the second chip 12 precision between.

例如,第一芯片11为发射器,这里以激光发射器为例,其具有亮度高、方向性好、单色性好和相干性好等光学特性,特别的,由于激光的方向性好的特点,使得激光成为条码扫描的首选光源。For example, the first chip 11 is a transmitter. Here, a laser transmitter is taken as an example. It has optical properties such as high brightness, good directivity, good monochromaticity and good coherence. In particular, due to the good directivity of the laser , making the laser the preferred light source for barcode scanning.

条码扫描过程中,除了激光芯片外,还需要实现激光芯片出射光线扫描的扫描设备,第二芯片12为起到扫描作用的衍射光学元件。In the barcode scanning process, in addition to the laser chip, a scanning device for scanning light emitted from the laser chip is also required, and the second chip 12 is a diffractive optical element that plays a scanning role.

现有技术中的第一芯片11固定于框架13上,第二芯片12固定于基板14上,框架13的端部通过胶水15实现与基板14的相互固定,此时,主要是通过控制胶水15的厚度来调节第一芯片11与第二芯片12之间的距离B,该调节方式需要用到专用的设备和材料,成本偏高且加工时间长,良率低。In the prior art, the first chip 11 is fixed on the frame 13 , the second chip 12 is fixed on the substrate 14 , and the end of the frame 13 is fixed with the substrate 14 by the glue 15 . The distance B between the first chip 11 and the second chip 12 is adjusted by the thickness of the first chip 11 and the distance B between the second chip 12 is adjusted. This adjustment method requires special equipment and materials, and the cost is high, the processing time is long, and the yield is low.

发明内容SUMMARY OF THE INVENTION

本发明的目的在于提供一种可提高光学精度、组装效率,降低成本的芯片的封装结构及封装方法。The purpose of the present invention is to provide a chip packaging structure and packaging method which can improve optical precision, assembly efficiency and reduce cost.

为实现上述发明目的之一,本发明一实施方式提供一种芯片的封装结构,包括:To achieve one of the above purposes of the invention, an embodiment of the present invention provides a chip packaging structure, including:

第一电路板,包括相对设置第一表面及第二表面,以及贯穿所述第一表面及所述第二表面的通孔;a first circuit board, comprising a first surface and a second surface disposed opposite to each other, and a through hole penetrating the first surface and the second surface;

基板,位于所述第一表面并覆盖所述通孔;a substrate, located on the first surface and covering the through hole;

第一芯片,位于所述基板面向所述通孔的一侧,且所述第一芯片朝向所述通孔延伸;a first chip, located on the side of the substrate facing the through hole, and the first chip extends toward the through hole;

第一金属球,连接所述基板及所述第一表面;a first metal ball, connected to the substrate and the first surface;

第二电路板,位于所述第二表面并覆盖所述通孔;a second circuit board, located on the second surface and covering the through hole;

第二芯片,位于所述第二电路板面向所述通孔的一侧,且所述第二芯片朝向所述通孔延伸;a second chip, located on the side of the second circuit board facing the through hole, and the second chip extends toward the through hole;

第二金属球,连接所述第二电路板及所述第二表面。The second metal ball is connected to the second circuit board and the second surface.

作为本发明一实施方式的进一步改进,所述第一金属球及所述第二金属球均为金球。As a further improvement of an embodiment of the present invention, both the first metal ball and the second metal ball are gold balls.

作为本发明一实施方式的进一步改进,所述第一芯片包括发射器,所述第二芯片包括衍射光学元件。As a further improvement of an embodiment of the present invention, the first chip includes an emitter, and the second chip includes a diffractive optical element.

作为本发明一实施方式的进一步改进,所述封装结构还包括连接所述基板的侧缘及所述第一表面的第一封装胶,以及连接所述第二电路板的侧缘及所述第二表面的第二封装胶。As a further improvement of an embodiment of the present invention, the package structure further includes a first encapsulant for connecting the side edge of the substrate and the first surface, and connecting the side edge of the second circuit board and the first surface. The second encapsulant on the two surfaces.

作为本发明一实施方式的进一步改进,所述基板为透明基板。As a further improvement of an embodiment of the present invention, the substrate is a transparent substrate.

作为本发明一实施方式的进一步改进,所述基板面向所述通孔的一侧设有金属线路层,所述第一电路板包括第一互联线路,所述第二电路板包括第二互联线路及第三互联线路,所述第一芯片通过第一打线电性连接所述金属线路层,所述金属线路层通过所述第一金属球电性连接所述第一互联线路,所述第一互联线路通过所述第二金属球电性连接所述第二互联线路,所述第二芯片通过第二打线电性连接所述第三互联线路。As a further improvement of an embodiment of the present invention, the side of the substrate facing the through hole is provided with a metal circuit layer, the first circuit board includes a first interconnection circuit, and the second circuit board includes a second interconnection circuit and a third interconnection circuit, the first chip is electrically connected to the metal circuit layer through a first bonding wire, the metal circuit layer is electrically connected to the first interconnection circuit through the first metal ball, and the first metal circuit layer is electrically connected to the first interconnection circuit through the first metal ball. An interconnection circuit is electrically connected to the second interconnection circuit through the second metal ball, and the second chip is electrically connected to the third interconnection circuit through a second bonding wire.

作为本发明一实施方式的进一步改进,所述第二电路板远离所述通孔的一侧设有第二连接端子及第三连接端子,所述第二连接端子导通所述第二互联线路,所述第三连接端子导通所述第三互联线路,所述第二电路板通过所述第二连接端子及所述第三连接端子电性连接外部电路板。As a further improvement of an embodiment of the present invention, a side of the second circuit board away from the through hole is provided with a second connection terminal and a third connection terminal, and the second connection terminal conducts the second interconnection circuit and the third connection terminal conducts the third interconnection circuit, and the second circuit board is electrically connected to an external circuit board through the second connection terminal and the third connection terminal.

作为本发明一实施方式的进一步改进,所述第一电路板及所述第二电路板均为印刷电路板。As a further improvement of an embodiment of the present invention, the first circuit board and the second circuit board are both printed circuit boards.

为实现上述发明目的之一,本发明一实施方式提供一种芯片的封装方法,包括步骤:To achieve one of the above purposes of the invention, an embodiment of the present invention provides a method for packaging a chip, comprising the steps of:

将第一芯片固定于基板,并于所述基板上形成第一金属球而构造为第一部分;fixing the first chip on a substrate, and forming a first metal ball on the substrate to form a first part;

将第二芯片固定于第二电路板,并于所述第二电路板上形成第二金属球而构造为第二部分;fixing the second chip on the second circuit board, and forming a second metal ball on the second circuit board to form a second part;

于第一电路板上形成贯穿所述第一电路板上相对设置的第一表面及第二表面的通孔;forming a through hole on the first circuit board penetrating the first surface and the second surface oppositely disposed on the first circuit board;

通过倒装工艺将所述第一部分结合至所述第一电路板的第一表面,所述第一芯片朝向所述通孔延伸;bonding the first portion to the first surface of the first circuit board through a flip-chip process, the first chip extending toward the through hole;

通过倒装工艺将所述第二部分结合至所述第一电路板的第二表面,所述第二芯片朝向所述通孔延伸。The second portion is bonded to the second surface of the first circuit board by a flip-chip process, and the second chip extends toward the through hole.

作为本发明一实施方式的进一步改进,步骤“通过倒装工艺将所述第二部分结合至所述第一电路板的第二表面,所述第二芯片朝向所述通孔延伸”还包括:As a further improvement of an embodiment of the present invention, the step of "bonding the second part to the second surface of the first circuit board through a flip-chip process, the second chip extending toward the through hole" further includes:

获取所述第一电路板远离所述第一部分的第二表面与所述第一芯片远离所述基板的第一作用面之间的第一距离,并根据所述第二芯片的第二作用面与所述第一芯片的所述第一作用面之间的目标距离以及所述第一距离获取所述第二金属球的期望高度;Obtain the first distance between the second surface of the first circuit board away from the first part and the first active surface of the first chip away from the substrate, and according to the second active surface of the second chip The desired height of the second metal ball is obtained from the target distance from the first active surface of the first chip and the first distance;

在倒装工艺过程中通过控制焊接力度使得所述第二金属球的成型高度为所述期望高度。During the flip-chip process, the forming height of the second metal ball is controlled to the desired height by controlling the welding force.

作为本发明一实施方式的进一步改进,步骤“将第一芯片固定于基板,并于所述基板上形成第一金属球而构造为第一部分”具体包括:As a further improvement of an embodiment of the present invention, the step "fixing the first chip on the substrate, and forming the first metal ball on the substrate to form the first part" specifically includes:

于基板上形成金属线路层;forming a metal circuit layer on the substrate;

通过固晶工艺将所述第一芯片固定于所述基板设有所述金属线路层的一侧;Fixing the first chip on the side of the substrate on which the metal circuit layer is provided by a die bonding process;

通过打线工艺电性连接所述第一芯片及所述金属线路层;The first chip and the metal circuit layer are electrically connected through a wire bonding process;

形成电性连接所述金属线路层的第一金属球而构造为第一部分。A first metal ball electrically connected to the metal circuit layer is formed to form a first portion.

作为本发明一实施方式的进一步改进,步骤“将第二芯片固定于第二电路板,并于所述第二电路板上形成第二金属球而构造为第二部分”具体包括:As a further improvement of an embodiment of the present invention, the step of "fixing the second chip on the second circuit board, and forming a second metal ball on the second circuit board to form a second part" specifically includes:

通过固晶工艺将所述第二芯片固定于所述第二电路板;Fixing the second chip on the second circuit board through a die bonding process;

通过打线工艺电性连接所述第二芯片及所述第二电路板中的第三互联线路;Electrically connecting the second chip and the third interconnecting circuit in the second circuit board through a wire bonding process;

形成电性连接所述第二电路板中的第二互联线路的第二金属球而构造为第二部分。A second metal ball is formed to be electrically connected to the second interconnecting circuit in the second circuit board and is configured as a second portion.

作为本发明一实施方式的进一步改进,步骤“通过倒装工艺将所述第一部分结合至所述第一电路板的第一表面,所述第一芯片朝向所述通孔延伸;通过倒装工艺将所述第二部分结合至所述第一电路板的第二表面,所述第二芯片朝向所述通孔延伸”具体包括:As a further improvement of an embodiment of the present invention, the step "bonding the first part to the first surface of the first circuit board by a flip-chip process, the first chip extending toward the through hole; by a flip-chip process Bonding the second part to the second surface of the first circuit board, the second chip extending toward the through hole "specifically includes:

通过倒装工艺使得所述第一金属球电性连接所述第一电路板中的第一互联线路;The first metal ball is electrically connected to the first interconnection circuit in the first circuit board through a flip-chip process;

通过倒装工艺使得第二金属球电性连接所述第一互联线路及所述第二电路板中的第二互联线路。The second metal ball is electrically connected to the first interconnection circuit and the second interconnection circuit in the second circuit board through a flip-chip process.

作为本发明一实施方式的进一步改进,所述方法还包括步骤:As a further improvement of an embodiment of the present invention, the method further includes the steps:

于所述第二电路板远离所述通孔的一侧形成导通所述第二互联线路的第二连接端子以及导通所述第三互联线路的第三连接端子。A second connection terminal for conducting the second interconnection circuit and a third connection terminal for conducting the third interconnection circuit are formed on the side of the second circuit board away from the through hole.

与现有技术相比,本发明的有益效果在于:本发明一实施方式的第一金属球及第二金属球的高度可通过焊接力度有效控制,也就是说,通过调整焊接力度可有效控制第一金属球及第二金属球的高度,从而有效控制第一芯片与第二芯片之间的距离,大大提高第一芯片与第二芯片之间的光学精度,且可大大提高组装效率,降低成本;另外,可通过第一金属球及第二金属球直接实现基板、第一电路板及第二电路板之间的信号传输,换句话说,第一金属球及第二金属球不仅能够有效调节第一芯片与第二芯片之间的距离,同时还能实现信号传输。Compared with the prior art, the beneficial effect of the present invention is that the heights of the first metal ball and the second metal ball in one embodiment of the present invention can be effectively controlled by the welding strength, that is, the first metal ball can be effectively controlled by adjusting the welding strength. The height of a metal ball and a second metal ball can effectively control the distance between the first chip and the second chip, greatly improve the optical accuracy between the first chip and the second chip, and greatly improve the assembly efficiency and reduce the cost. ; In addition, the signal transmission between the substrate, the first circuit board and the second circuit board can be directly realized through the first metal ball and the second metal ball. In other words, the first metal ball and the second metal ball can not only effectively adjust the The distance between the first chip and the second chip can also realize signal transmission.

附图说明Description of drawings

图1是现有技术中封装结构示意图;1 is a schematic diagram of a package structure in the prior art;

图2是本发明一实施方式的封装结构示意图;2 is a schematic diagram of a package structure according to an embodiment of the present invention;

图3是本发明一实施方式的封装方法步骤图;3 is a step diagram of a packaging method according to an embodiment of the present invention;

图4至图13是本发明一实施方式的封装方法各个步骤的示意图。4 to 13 are schematic diagrams of various steps of a packaging method according to an embodiment of the present invention.

具体实施方式Detailed ways

以下将结合附图所示的具体实施方式对本发明进行详细描述。但这些实施方式并不限制本发明,本领域的普通技术人员根据这些实施方式所做出的结构、方法、或功能上的变换均包含在本发明的保护范围内。The present invention will be described in detail below with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and structural, method, or functional changes made by those skilled in the art according to these embodiments are all included in the protection scope of the present invention.

在本发明的各个图示中,为了便于图示,结构或部分的某些尺寸会相对于其它结构或部分夸大,因此,仅用于图示本发明的主题的基本结构。In various drawings of the present invention, some dimensions of structures or parts are exaggerated relative to other structures or parts for convenience of illustration, and thus, are only used to illustrate the basic structure of the subject matter of the present invention.

结合图2,为本发明一实施方式的芯片的封装结构200示意图。2 is a schematic diagram of a package structure 200 of a chip according to an embodiment of the present invention.

封装结构200包括第一电路板20、基板30、第一芯片31、第一金属球32、第二电路板40、第二芯片41及第二金属球42。The package structure 200 includes a first circuit board 20 , a substrate 30 , a first chip 31 , a first metal ball 32 , a second circuit board 40 , a second chip 41 and a second metal ball 42 .

第一电路板20包括相对设置第一表面21及第二表面22,以及贯穿第一表面21及第二表面22的通孔23。The first circuit board 20 includes a first surface 21 and a second surface 22 disposed opposite to each other, and a through hole 23 penetrating the first surface 21 and the second surface 22 .

基板30位于第一表面21并覆盖通孔23。The substrate 30 is located on the first surface 21 and covers the through holes 23 .

第一芯片31位于基板30面向通孔23的一侧,且第一芯片31朝向通孔23延伸。The first chip 31 is located on the side of the substrate 30 facing the through hole 23 , and the first chip 31 extends toward the through hole 23 .

第一金属球32连接基板30及第一表面21。The first metal balls 32 are connected to the substrate 30 and the first surface 21 .

第二电路板40位于第二表面22并覆盖通孔23。The second circuit board 40 is located on the second surface 22 and covers the through holes 23 .

第二芯片41位于第二电路板40面向通孔23的一侧,且第二芯片41朝向通孔23延伸。The second chip 41 is located on the side of the second circuit board 40 facing the through hole 23 , and the second chip 41 extends toward the through hole 23 .

第二金属球42连接第二电路板40及第二表面22。The second metal balls 42 are connected to the second circuit board 40 and the second surface 22 .

这里,基板30与第一电路板20之间通过第一金属球32连接,第二电路板40与第一电路板20之间通过第二金属球42连接,第一金属球32及第二金属球42的高度可通过焊接力度有效控制,也就是说,通过调整焊接力度可有效控制第一金属球32及第二金属球42的高度,从而有效控制第一芯片31与第二芯片41之间的距离,大大提高第一芯片31与第二芯片41之间的光学精度,且可大大提高组装效率,降低成本。Here, the substrate 30 and the first circuit board 20 are connected through the first metal balls 32 , the second circuit board 40 and the first circuit board 20 are connected through the second metal balls 42 , and the first metal balls 32 and the second metal The height of the balls 42 can be effectively controlled by the welding strength, that is, the heights of the first metal balls 32 and the second metal balls 42 can be effectively controlled by adjusting the welding strength, thereby effectively controlling the distance between the first chip 31 and the second chip 41 . The distance between the first chip 31 and the second chip 41 can be greatly improved, the assembly efficiency can be greatly improved, and the cost can be reduced.

另外,基板30与第一电路板20之间、第一电路板20与第二电路板40之间分别通过具有导电性能的第一金属球32及第二金属球42连接,可通过第一金属球32及第二金属球42直接实现基板30、第一电路板20及第二电路板40之间的信号传输,换句话说,第一金属球32及第二金属球42不仅能够有效调节第一芯片31与第二芯片41之间的距离,同时还能实现信号传输。In addition, the substrate 30 and the first circuit board 20 and between the first circuit board 20 and the second circuit board 40 are respectively connected by the first metal balls 32 and the second metal balls 42 having electrical conductivity, and the first metal balls 32 and 42 are respectively connected. The balls 32 and the second metal balls 42 directly realize the signal transmission between the substrate 30 , the first circuit board 20 and the second circuit board 40 . In other words, the first metal balls 32 and the second metal balls 42 can not only effectively adjust the The distance between one chip 31 and the second chip 41 can also realize signal transmission.

需要说明的是,第一芯片31与第二芯片41于竖直方向X上对准设置,以使得第一芯片31与第二芯片41之间可进行光线传输,竖直方向X定义为基板30、第一电路板20及第二电路板40的叠加方向。It should be noted that the first chip 31 and the second chip 41 are aligned in the vertical direction X, so that light can be transmitted between the first chip 31 and the second chip 41, and the vertical direction X is defined as the substrate 30 , the superposition direction of the first circuit board 20 and the second circuit board 40 .

另外,“第一金属球32连接基板30”是指第一金属球32位于基板30的一侧,第一金属球32与基板30之间可以是直接连接或者是间接连接,换句话说,本实施方式所述的一个部件连接、固定于或位于另一个部件,是指两个部件之间直接连接或者是间接连接。In addition, "the first metal balls 32 are connected to the substrate 30" means that the first metal balls 32 are located on one side of the substrate 30, and the first metal balls 32 and the substrate 30 may be directly or indirectly connected. When one component is connected to, fixed to, or located at another component in the embodiments, it means that the two components are directly connected or indirectly connected.

在本实施方式中,第一芯片31包括发射器31,第二芯片41包括衍射光学元件41(Diffractive Optical Elements,DOE),第一芯片31及第二芯片41相互配合以实现条码扫描,但不以此为限。In this embodiment, the first chip 31 includes a transmitter 31, and the second chip 41 includes a diffractive optical element 41 (Diffractive Optical Elements, DOE). The first chip 31 and the second chip 41 cooperate with each other to realize barcode scanning, but do not This is the limit.

当衍射光学元件41接收到发射器31发送的向下的扫描光线后,衍射光学元件41将扫描光线分为多束扫描光而达到扫描效果,此时,需要有效控制发射器31的发射面与衍射光学元件41的接收面之间的距离而使得衍射光学元件41可以完整接收扫描光线,即需要控制第一芯片31的第一作用面311与第二芯片41的第二作用面411之间的目标距离H,本实施方式通过第一金属球32及第二金属球42可实现目标距离H的有效控制。When the diffractive optical element 41 receives the downward scanning light sent by the transmitter 31, the diffractive optical element 41 divides the scanning light into multiple beams of scanning light to achieve a scanning effect. At this time, it is necessary to effectively control the emission surface of the transmitter 31 and the The distance between the receiving surfaces of the diffractive optical element 41 enables the diffractive optical element 41 to completely receive the scanning light, that is, it is necessary to control the distance between the first working surface 311 of the first chip 31 and the second working surface 411 of the second chip 41 . The target distance H can be effectively controlled by the first metal balls 32 and the second metal balls 42 in this embodiment.

在本实施方式中,基板30为透明基板,可使得衍射光学元件41发出的多束扫描光传输至封装结构100的外部。In this embodiment, the substrate 30 is a transparent substrate, so that the multiple beams of scanning light emitted by the diffractive optical element 41 can be transmitted to the outside of the package structure 100 .

第一金属球32及第二金属球42均为金球,可有效提高信号传输性能。The first metal ball 32 and the second metal ball 42 are both gold balls, which can effectively improve signal transmission performance.

第一电路板20及第二电路板40均为印刷电路板,以保证封装结构100的整体强度以及目标距离H调节过程的精准度。The first circuit board 20 and the second circuit board 40 are both printed circuit boards to ensure the overall strength of the package structure 100 and the accuracy of the target distance H adjustment process.

在本实施方式中,第一电路板20包括第一互联线路201,第一互联线路201为第一电路板20本身带有的线路,第一互联线路201分别延伸至第一电路板20的第一表面21及第二表面22;第二电路板40包括第二互联线路401及第三互联线路402,第二互联线路401及第三互联线路402为第二电路板40本身带有的线路,第二互联线路401及第三互联线路402均分别延伸至第二电路板40的上表面43及下表面44。In this embodiment, the first circuit board 20 includes a first interconnection circuit 201 , the first interconnection circuit 201 is a circuit provided by the first circuit board 20 itself, and the first interconnection circuit 201 extends to the first circuit board 20 respectively. A surface 21 and a second surface 22; the second circuit board 40 includes a second interconnection circuit 401 and a third interconnection circuit 402, and the second interconnection circuit 401 and the third interconnection circuit 402 are the circuits of the second circuit board 40 itself, Both the second interconnection line 401 and the third interconnection line 402 extend to the upper surface 43 and the lower surface 44 of the second circuit board 40 , respectively.

第二电路板40远离通孔23的一侧(即第二电路板40的下表面44)设有第二连接端子4011及第三连接端子4021,第二连接端子4011导通第二互联线路401,第三连接端子4021导通第三互联线路402,第二电路板40通过第二连接端子4011及第三连接端子4021电性连接外部电路板,外部电路板例如为系统控制板。The side of the second circuit board 40 away from the through hole 23 (ie, the lower surface 44 of the second circuit board 40 ) is provided with a second connection terminal 4011 and a third connection terminal 4021 , and the second connection terminal 4011 conducts the second interconnection circuit 401 The third connection terminal 4021 conducts the third interconnection circuit 402, and the second circuit board 40 is electrically connected to an external circuit board, such as a system control board, through the second connection terminal 4011 and the third connection terminal 4021.

基板30面向通孔23的一侧设有金属线路层33,第一芯片31通过第一打线34电性连接金属线路层33。The side of the substrate 30 facing the through hole 23 is provided with a metal circuit layer 33 , and the first chip 31 is electrically connected to the metal circuit layer 33 through a first bonding wire 34 .

这里,金属线路层33包括依次连接基板30的保护层301、重布线层302及阻焊层303,保护层301的热膨胀系数可介于基板30及重布线层302之间,但不以此为限,保护层301的设置可避免重布线层301及基板30在应力拉扯下相互分离。Here, the metal circuit layer 33 includes a protective layer 301, a redistribution layer 302 and a solder resist layer 303 that are connected to the substrate 30 in sequence. The thermal expansion coefficient of the protective layer 301 may be between the substrate 30 and the redistribution layer 302, but it is not However, the disposition of the protective layer 301 can prevent the redistribution layer 301 and the substrate 30 from being separated from each other under stress pulling.

第一金属球32的一端电性连接阻焊层303,第一芯片31通过第一打线34电性连接重布线层302。One end of the first metal ball 32 is electrically connected to the solder resist layer 303 , and the first chip 31 is electrically connected to the redistribution layer 302 through the first bonding wire 34 .

金属线路层33通过第一金属球32电性连接第一互联线路201,第一互联线路201通过第二金属球42电性连接第二互联线路401,如此,第一芯片31可依次经过第一打线34、金属线路层33、第一金属球32、第一互联线路201、第二互联线路401及第二连接端子4011而电性连接至外部电路板,从而可通过外部电路板实现对第一芯片31的控制,例如,控制第一芯片31的开机关机操作等。The metal circuit layer 33 is electrically connected to the first interconnection circuit 201 through the first metal ball 32 , and the first interconnection circuit 201 is electrically connected to the second interconnection circuit 401 through the second metal ball 42 . In this way, the first chip 31 can pass through the first The bonding wire 34 , the metal circuit layer 33 , the first metal ball 32 , the first interconnecting circuit 201 , the second interconnecting circuit 401 and the second connecting terminal 4011 are electrically connected to the external circuit board, so that the external circuit board can realize the The control of a chip 31 , for example, controls the power-on and shutdown operations of the first chip 31 .

第二芯片41通过第二打线45电性连接第三互联线路402,如此,第二芯片41可依次通过第二打线45、第三互联线路402及第三连接端子4021而电性连接至外部电路板,从而可通过外部电路板实现对第二芯片41的控制,例如,控制第二芯片41的扫描方向、扫描范围等。The second chip 41 is electrically connected to the third interconnecting circuit 402 through the second bonding wire 45 . In this way, the second chip 41 can be electrically connected to the third interconnecting circuit 402 through the second bonding wire 45 , the third interconnecting circuit 402 and the third connecting terminal 4021 in sequence. The external circuit board, so that the control of the second chip 41 can be realized through the external circuit board, for example, the scanning direction and the scanning range of the second chip 41 can be controlled.

可以看到,本实施方式通过第一金属球32及第二金属球42可实现基板30、第一电路板20及第二电路板40之间的导通,从而可将第一芯片31及第二芯片41电性连接至外部电路板,通过简单的结构便实现了芯片的控制。It can be seen that in this embodiment, conduction between the substrate 30 , the first circuit board 20 and the second circuit board 40 can be achieved through the first metal balls 32 and the second metal balls 42 , so that the first chip 31 and the second circuit board 40 can be connected to each other. The two chips 41 are electrically connected to the external circuit board, and the control of the chips is realized through a simple structure.

在本实施方式中,封装结构100还包括连接基板30的侧缘304及第一电路板20的第一表面21的第一封装胶35,以及连接第二电路板40的侧缘403及第二表面22的第二封装胶46,第一封装胶35的设置可提高基板30与第一电路板20之间配合的稳定性,同样的,第二封装胶46的设置可提高第二电路板40与第一电路板20之间配合的稳定性。In this embodiment, the package structure 100 further includes a first encapsulant 35 connecting the side edge 304 of the substrate 30 and the first surface 21 of the first circuit board 20 , and connecting the side edge 403 and the second circuit board 40 The second encapsulant 46 and the first encapsulant 35 on the surface 22 can improve the stability of the cooperation between the substrate 30 and the first circuit board 20. Similarly, the arrangement of the second encapsulant 46 can improve the stability of the second circuit board 40. Stability of cooperation with the first circuit board 20 .

本发明一实施方式还提供一种芯片的封装方法,结合前述封装结构100的说明以及图3至图13,芯片的封装方法包括步骤:An embodiment of the present invention also provides a method for packaging a chip. With reference to the description of the packaging structure 100 and FIGS. 3 to 13, the method for packaging a chip includes the steps:

S1:结合图4至图7,将第一芯片31固定于基板30,并于基板30上形成第一金属球32而构造为第一部分P1;S1 : with reference to FIGS. 4 to 7 , fix the first chip 31 on the substrate 30 , and form the first metal balls 32 on the substrate 30 to form the first portion P1 ;

步骤S1具体包括:Step S1 specifically includes:

于基板30上形成金属线路层33;forming a metal circuit layer 33 on the substrate 30;

这里,金属线路层33包括依次连接基板30的保护层301、重布线层302及阻焊层303。Here, the metal wiring layer 33 includes a protective layer 301 , a redistribution layer 302 and a solder resist layer 303 which are sequentially connected to the substrate 30 .

通过固晶工艺将第一芯片31固定于基板30设有金属线路层33的一侧;The first chip 31 is fixed on the side of the substrate 30 where the metal circuit layer 33 is provided by a die bonding process;

通过打线工艺电性连接第一芯片31及金属线路层33;The first chip 31 and the metal circuit layer 33 are electrically connected through a wire bonding process;

这里,第一芯片31通过第一打线34电性连接重布线层302。Here, the first chip 31 is electrically connected to the redistribution layer 302 through the first bonding wire 34 .

形成电性连接金属线路层33的第一金属球32而构造为第一部分P1。The first metal balls 32 that are electrically connected to the metal wiring layer 33 are formed to form the first portion P1.

这里,第一金属球32的一端电性连接阻焊层303,此时的第一部分P1包括基板30、第一芯片31、第一金属球32、金属线路层33及第一打线34。Here, one end of the first metal ball 32 is electrically connected to the solder resist layer 303 , and the first part P1 includes the substrate 30 , the first chip 31 , the first metal ball 32 , the metal circuit layer 33 and the first bonding wire 34 .

S3:结合图8及图9,将第二芯片41固定于第二电路板40,并于第二电路板40上形成第二金属球42而构造为第二部分P2;S3: With reference to FIG. 8 and FIG. 9, the second chip 41 is fixed on the second circuit board 40, and the second metal ball 42 is formed on the second circuit board 40 to form a second portion P2;

步骤S3具体包括:Step S3 specifically includes:

通过固晶工艺将第二芯片41固定于第二电路板40;The second chip 41 is fixed on the second circuit board 40 through a die bonding process;

这里,第二芯片41固定于第二电路板40的上表面43。Here, the second chip 41 is fixed to the upper surface 43 of the second circuit board 40 .

通过打线工艺电性连接第二芯片41及第二电路板40中的第三互联线路402;The second chip 41 and the third interconnection circuit 402 in the second circuit board 40 are electrically connected through a wire bonding process;

这里,第二芯片41通过第二打线45电性连接第三互联线路402。Here, the second chip 41 is electrically connected to the third interconnection circuit 402 through the second bonding wire 45 .

形成电性连接第二电路板40中的第二互联线路401的第二金属球42而构造为第二部分P2。The second metal balls 42 that are electrically connected to the second interconnecting lines 401 in the second circuit board 40 are formed to form the second portion P2.

这里,第二金属球42的一端电性连接第二互联线路401,此时的第二部分P2包括第二电路板40、第二芯片41、第二金属球42及第二打线45。Here, one end of the second metal ball 42 is electrically connected to the second interconnecting circuit 401 , and the second portion P2 includes the second circuit board 40 , the second chip 41 , the second metal ball 42 and the second bonding wire 45 .

S5:结合图10,于第一电路板20上形成贯穿第一电路板20上相对设置的第一表面21及第二表面22的通孔23;S5: Referring to FIG. 10, forming a through hole 23 on the first circuit board 20 penetrating the first surface 21 and the second surface 22 oppositely disposed on the first circuit board 20;

S7:结合图11,通过倒装工艺将第一部分P1结合至第一电路板20的第一表面21,第一芯片31朝向通孔23延伸;S7: Referring to FIG. 11, the first part P1 is bonded to the first surface 21 of the first circuit board 20 through a flip-chip process, and the first chip 31 extends toward the through hole 23;

S9:结合图12,通过倒装工艺将第二部分P2结合至第一电路板20的第二表面22,第二芯片41朝向通孔23延伸。S9 : Referring to FIG. 12 , the second part P2 is bonded to the second surface 22 of the first circuit board 20 through a flip-chip process, and the second chip 41 extends toward the through hole 23 .

具体的,步骤S7、S9为:通过倒装工艺使得第一金属球32电性连接第一电路板20中的第一互联线路201,同样的,通过倒装工艺使得第二金属球42电性连接第一电路板20中的第一互联线路201及第二电路板40中的第二互联线路401,如此,便实现了第一部分P1与第一电路板20的互联,以及第二部分P2与第一电路板20的互联。Specifically, in steps S7 and S9, the first metal ball 32 is electrically connected to the first interconnection circuit 201 in the first circuit board 20 through a flip-chip process. Similarly, the second metal ball 42 is electrically connected to the second metal ball 42 through the flip-chip process. Connect the first interconnecting circuit 201 in the first circuit board 20 and the second interconnecting circuit 401 in the second circuit board 40, so that the interconnection between the first part P1 and the first circuit board 20, and the second part P2 and the Interconnection of the first circuit board 20 .

这里,需要说明的是,为了提高基板30与第一电路板20之间的配合的稳定性,以及提高第一电路板20与第二电路板40之间配合的稳定性,步骤S7及S9还包括:Here, it should be noted that, in order to improve the stability of the cooperation between the substrate 30 and the first circuit board 20, and improve the stability of the cooperation between the first circuit board 20 and the second circuit board 40, steps S7 and S9 further include:

形成连接基板30的侧缘304及第一电路板20的第一表面21的第一封装胶35,形成连接第二电路板40的侧缘403及第二表面22的第二封装胶46。The first encapsulant 35 connecting the side edge 304 of the substrate 30 and the first surface 21 of the first circuit board 20 is formed, and the second encapsulant 46 connecting the side edge 403 of the second circuit board 40 and the second surface 22 is formed.

步骤S7、S9的具体操作流程为:The specific operation flow of steps S7 and S9 is as follows:

获取第一电路板20远离第一部分P1的第二表面22与第一芯片31远离基板30的第一作用面311之间的第一距离H1,并根据第二芯片41的第二作用面411与第一芯片31的第一作用面311之间的目标距离H以及第一距离H1获取第二金属球42的期望高度H’;Obtain the first distance H1 between the second surface 22 of the first circuit board 20 away from the first part P1 and the first active surface 311 of the first chip 31 away from the substrate 30, and according to the relationship between the second active surface 411 of the second chip 41 and the first active surface 311 of the first chip 31 The target distance H and the first distance H1 between the first active surfaces 311 of the first chip 31 obtain the desired height H' of the second metal ball 42;

在倒装工艺过程中通过控制焊接力度使得第二金属球42的成型高度为期望高度H’。During the flip-chip process, the forming height of the second metal balls 42 is made to be a desired height H' by controlling the welding force.

这里,假设第一芯片31的第一作用面311与基板30靠近通孔23一侧的表面之间的距离为H2,第一金属球32与基板30靠近通孔23一侧的表面之间的距离为H3,第一电路板20的厚度为H4,那么,第一距离H1=H4+H3-H2,可通过控制制程、材料、焊接力度等有效控距离H1、H2,而后通过选择一定规格的第一电路板20而获取厚度H4,如此,便可得到第一距离H1,实际操作中,可通过一定的制程、材料、焊接力度等使得距离H1、H2为定值,此时仅需选择已知厚度H4的第一电路板20便可直接获取第一距离H1。Here, it is assumed that the distance between the first working surface 311 of the first chip 31 and the surface of the substrate 30 on the side close to the through hole 23 is H2, and the distance between the first metal ball 32 and the surface of the substrate 30 on the side close to the through hole 23 is H2. The distance is H3, and the thickness of the first circuit board 20 is H4. Then, the first distance H1=H4+H3-H2. The distances H1 and H2 can be effectively controlled by controlling the process, materials, welding strength, etc., and then by selecting a certain specification The thickness H4 of the first circuit board 20 is obtained. In this way, the first distance H1 can be obtained. In actual operation, the distances H1 and H2 can be set to a fixed value through a certain process, material, welding strength, etc. The first distance H1 can be directly obtained by knowing the thickness H4 of the first circuit board 20 .

而后,根据不同的封装结构100,第二芯片41的第二作用面411与第一芯片31的第一作用面311之间的目标距离H是不同的,此时可预先获取到对应封装结构100的目标距离H,根据目标距离H以及第一距离H1便可获取第二金属球42的期望高度H’。Then, according to different packaging structures 100 , the target distance H between the second active surface 411 of the second chip 41 and the first active surface 311 of the first chip 31 is different, and the corresponding packaging structure 100 can be obtained in advance at this time. The desired height H' of the second metal ball 42 can be obtained according to the target distance H and the first distance H1.

这里,假设第二芯片41的第二作用面411与第二电路板40的上表面43之间的距离为H5,那么,第二金属球42的期望高度H’=H+H5-H1,实际操作中,可通过一定的制程、材料等使得距离H5为定值,此时便可根据前述获取的第一距离H1直接获取第二金属球42的期望高度H’。Here, assuming that the distance between the second active surface 411 of the second chip 41 and the upper surface 43 of the second circuit board 40 is H5, then the desired height of the second metal ball 42 H'=H+H5-H1, the actual In operation, the distance H5 can be set to a constant value through a certain process, material, etc. At this time, the desired height H' of the second metal ball 42 can be directly obtained according to the first distance H1 obtained above.

当获取第二金属球42的期望高度H’后,便可在步骤S9的倒装工艺过程中控制焊接力度,使得第二金属球42的成型高度为期望高度H’,此时便保证了第二芯片41的第二作用面411与第一芯片31的第一作用面311之间的距离为所期望的目标距离H。After obtaining the desired height H' of the second metal ball 42, the welding force can be controlled during the flip-chip process in step S9, so that the molding height of the second metal ball 42 is the desired height H', which ensures the first The distance between the second working surface 411 of the two chips 41 and the first working surface 311 of the first chip 31 is the desired target distance H.

另外,本实施方式的工艺方法还包括步骤:In addition, the process method of this embodiment also includes the steps:

S11:结合图13,于第二电路板40远离通孔23的一侧形成导通第二互联线路401的第二连接端子4011,以及导通第三互联线路402的第三连接端子4021。S11 : Referring to FIG. 13 , on the side of the second circuit board 40 away from the through hole 23 , a second connection terminal 4011 for conducting the second interconnection circuit 401 and a third connection terminal 4021 for conducting the third interconnection circuit 402 are formed.

可以看到,基板30与第一电路板20之间通过第一金属球32连接,第二电路板40与第一电路板20之间通过第二金属球42连接,通过调整焊接力度可有效控制第二金属球42的期望高度H’,从而有效控制第一芯片31与第二芯片41之间的目标距离H,大大提高第一芯片31与第二芯片41之间的光学精度,且可大大提高组装效率,降低成本。It can be seen that the substrate 30 and the first circuit board 20 are connected by the first metal balls 32, and the second circuit board 40 and the first circuit board 20 are connected by the second metal balls 42, which can be effectively controlled by adjusting the welding strength The desired height H' of the second metal ball 42 can effectively control the target distance H between the first chip 31 and the second chip 41, greatly improve the optical precision between the first chip 31 and the second chip 41, and can greatly Improve assembly efficiency and reduce costs.

另外,第一芯片31可依次经过第一打线34、金属线路层33、第一金属球32、第一互联线路201、第二互联线路401及第二连接端子4011而电性连接至外部电路板,从而可通过外部电路板实现对第一芯片31的控制,例如,控制第一芯片31的开机关机操作等,第二芯片41通过第二打线45电性连接第三互联线路402,如此,第二芯片41可依次通过第二打线45、第三互联线路402及第三连接端子4021而电性连接至外部电路板,从而可通过外部电路板实现对第二芯片41的控制,例如,控制第二芯片41的扫描方向、扫描范围等,本实施方式通过第一金属球32及第二金属球42可实现基板30、第一电路板20及第二电路板40之间的导通,从而可将第一芯片31及第二芯片41电性连接至外部电路板,通过简单的结构便实现了芯片的控制。In addition, the first chip 31 can be electrically connected to an external circuit through the first bonding wire 34 , the metal circuit layer 33 , the first metal ball 32 , the first interconnecting circuit 201 , the second interconnecting circuit 401 and the second connecting terminal 4011 in sequence. board, so that the control of the first chip 31 can be realized through the external circuit board, for example, the power-on and shutdown operations of the first chip 31 are controlled, and the second chip 41 is electrically connected to the third interconnection line 402 through the second bonding wire 45, so that , the second chip 41 can be electrically connected to the external circuit board through the second bonding wire 45, the third interconnection circuit 402 and the third connection terminal 4021 in sequence, so that the control of the second chip 41 can be realized through the external circuit board, for example , control the scanning direction, scanning range, etc. of the second chip 41. In this embodiment, the first metal ball 32 and the second metal ball 42 can realize the conduction between the substrate 30, the first circuit board 20 and the second circuit board 40. , so that the first chip 31 and the second chip 41 can be electrically connected to the external circuit board, and the control of the chips can be realized through a simple structure.

本实施方式的工艺方法的其他说明可以参考前述封装结构100的说明,在此不再赘述。For other descriptions of the process method in this embodiment, reference may be made to the description of the aforementioned packaging structure 100 , which will not be repeated here.

需要强调的是,上述步骤标号S1、S3、S5、S7、S9、S11并不实际限定步骤的前后关系,例如,第二部分P2成型步骤S3可位于第一部分P1的成型步骤S1之前,另外,也可先将第二部分P2与第一电路板20结合,而后再通过调整焊接力度控制第一金属球32的高度而控制第一芯片31与第二芯片41之间的目标距离H。It should be emphasized that the above step labels S1, S3, S5, S7, S9, and S11 do not actually limit the context of the steps. For example, the second part P2 forming step S3 can be located before the first part P1 forming step S1, in addition, The second part P2 can also be combined with the first circuit board 20 first, and then the height of the first metal ball 32 can be controlled by adjusting the bonding force to control the target distance H between the first chip 31 and the second chip 41 .

应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施方式中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。It should be understood that although this specification is described in terms of embodiments, not every embodiment only includes an independent technical solution, and this description in the specification is only for the sake of clarity, and those skilled in the art should take the specification as a whole, and each The technical solutions in the embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

上文所列出的一系列的详细说明仅仅是针对本发明的可行性实施方式的具体说明,它们并非用以限制本发明的保护范围,凡未脱离本发明技艺精神所作的等效实施方式或变更均应包含在本发明的保护范围之内。The series of detailed descriptions listed above are only specific descriptions for the feasible embodiments of the present invention, and they are not used to limit the protection scope of the present invention. Changes should all be included within the protection scope of the present invention.

Claims (14)

1. A chip package structure, comprising:
the first circuit board comprises a first surface, a second surface and a through hole, wherein the first surface and the second surface are oppositely arranged, and the through hole penetrates through the first surface and the second surface;
the substrate is positioned on the first surface and covers the through hole;
the first chip is positioned on one side, facing the through hole, of the substrate and extends towards the through hole;
a first metal ball connecting the substrate and the first surface;
the second circuit board is positioned on the second surface and covers the through hole;
the second chip is positioned on one side, facing the through hole, of the second circuit board and extends towards the through hole;
and the second metal ball is connected with the second circuit board and the second surface.
2. The package structure of claim 1, wherein the first metal balls and the second metal balls are gold balls.
3. The package structure of claim 1, wherein the first chip comprises an emitter and the second chip comprises a diffractive optical element.
4. The package structure of claim 1, further comprising a first encapsulant coupling the side edge of the substrate and the first surface, and a second encapsulant coupling the side edge of the second circuit board and the second surface.
5. The package structure of claim 1, wherein the substrate is a transparent substrate.
6. The package structure according to claim 1, wherein a metal circuit layer is disposed on a side of the substrate facing the through hole, the first circuit board includes a first interconnection circuit, the second circuit board includes a second interconnection circuit and a third interconnection circuit, the first chip is electrically connected to the metal circuit layer through a first wire, the metal circuit layer is electrically connected to the first interconnection circuit through the first metal ball, the first interconnection circuit is electrically connected to the second interconnection circuit through the second metal ball, and the second chip is electrically connected to the third interconnection circuit through the second wire.
7. The package structure according to claim 6, wherein a second connection terminal and a third connection terminal are disposed on a side of the second circuit board away from the through hole, the second connection terminal connects the second interconnection line, the third connection terminal connects the third interconnection line, and the second circuit board is electrically connected to an external circuit board through the second connection terminal and the third connection terminal.
8. The package structure of claim 1, wherein the first circuit board and the second circuit board are both printed circuit boards.
9. A method for packaging a chip, comprising the steps of:
fixing a first chip on a substrate, and forming first metal balls on the substrate to form a first portion;
fixing a second chip on a second circuit board, and forming second metal balls on the second circuit board to form a second part;
forming a through hole penetrating through a first surface and a second surface which are oppositely arranged on the first circuit board;
bonding the first portion to a first surface of the first circuit board by a flip-chip process, the first chip extending toward the via;
bonding the second portion to a second surface of the first circuit board by a flip-chip process, the second chip extending toward the via.
10. The packaging method according to claim 9, wherein the step of bonding the second portion to the second surface of the first circuit board by a flip-chip process, the second chip extending toward the via hole further comprises:
acquiring a first distance between a second surface of the first circuit board, which is far away from the first part, and a first active surface of the first chip, which is far away from the substrate, and acquiring an expected height of the second metal ball according to a target distance between a second active surface of the second chip and the first active surface of the first chip and the first distance;
and controlling the welding force during the flip-chip process to enable the molding height of the second metal balls to be the expected height.
11. The method according to claim 9, wherein the step of fixing the first chip to the substrate and forming the first metal balls on the substrate to configure the first portion specifically comprises:
forming a metal circuit layer on the substrate;
fixing the first chip on one side of the substrate, which is provided with the metal circuit layer, through a die bonding process;
electrically connecting the first chip and the metal circuit layer through a routing process;
first metal balls electrically connected with the metal circuit layer are formed to be constructed into a first part.
12. The method of claim 11, wherein the step of fixing a second chip to a second circuit board and forming second metal balls on the second circuit board to construct a second portion specifically comprises:
fixing the second chip on the second circuit board through a die bonding process;
electrically connecting the second chip and a third interconnection circuit in the second circuit board through a routing process;
second metal balls electrically connected to second interconnection lines in the second circuit board are formed to constitute a second portion.
13. The method of packaging of claim 12, wherein the step of "bonding the first portion to the first surface of the first circuit board by a flip-chip process, the first chip extending toward the via; bonding the second portion to the second surface of the first circuit board by a flip-chip process, the second chip extending toward the via "specifically includes:
enabling the first metal balls to be electrically connected with first interconnection lines in the first circuit board through a flip-chip process;
and enabling the second metal balls to be electrically connected with the first interconnection lines and the second interconnection lines in the second circuit board through a flip chip process.
14. The method of packaging of claim 12, further comprising the steps of:
and forming a second connecting terminal for conducting the second interconnection line and a third connecting terminal for conducting the third interconnection line on one side of the second circuit board, which is far away from the through hole.
CN202010470148.7A 2020-05-28 2020-05-28 Chip packaging structure and packaging method Pending CN111477619A (en)

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