CN111416604A - Power semiconductor device turn-on and turn-off voltage generating circuit - Google Patents
Power semiconductor device turn-on and turn-off voltage generating circuit Download PDFInfo
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- CN111416604A CN111416604A CN202010376611.1A CN202010376611A CN111416604A CN 111416604 A CN111416604 A CN 111416604A CN 202010376611 A CN202010376611 A CN 202010376611A CN 111416604 A CN111416604 A CN 111416604A
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Abstract
The invention discloses a power semiconductor device on-off voltage generating circuit which comprises a single power supply, a first reference voltage module, a second reference voltage module, a switch control module and an output module. The first reference voltage module generates a first voltage according to the single power supply, wherein the first voltage is equal to the voltage of the single power supply minus a turn-on voltage. The second reference voltage module generates a second voltage according to the single power supply, the second voltage being equal to the turn-off voltage. The switch control module judges whether the first voltage is greater than a preset voltage. When the first voltage is larger than the preset voltage, the output module amplifies and outputs the first voltage so that the single power supply distributes stable switching-on voltage. When the first voltage is less than or equal to the preset voltage, the output module amplifies and outputs the second voltage, so that the single power supply distributes stable turn-off voltage. Thus, the design can be simplified and the cost can be saved.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to a power semiconductor device switching-on and switching-off voltage generating circuit.
Background
In integrated circuit chips, in driving applications of power semiconductor devices (such as IGBTs), different turn-on voltages and turn-off voltages are required in order to enable the power semiconductor devices to be reliably turned on and off.
In the prior art, two power supplies are usually required to supply power to the on module and the off module, respectively. However, due to circuit influence, the supply voltage of the power supply usually fluctuates within a certain range, so that the design of dual power supply is complicated, the cost is high, and the implementation is not easy.
Disclosure of Invention
In view of the above, it is desirable to provide a power semiconductor device on-and-off voltage generating circuit capable of generating an on-voltage and an off-voltage required for a power semiconductor device by a single power supply, thereby simplifying the design and saving the cost.
The technical scheme provided by the invention for achieving the purpose is as follows:
a power semiconductor device on-off voltage generating circuit comprises a single power supply with a power supply voltage fluctuating within a certain range, and is used for generating an on-voltage and an off-voltage for a power semiconductor device through the single power supply, the power semiconductor device on-off voltage generating circuit further comprises a first reference voltage module, a second reference voltage module, a switch control module and an output module, one end of the first reference voltage module and one end of the second reference voltage module are electrically connected with the single power supply, the other end of the first reference voltage module and the other end of the second reference voltage module are electrically connected with the switch control module, the switch control module is further electrically connected with the output module, the first reference voltage module is used for generating a first voltage according to the single power supply, and the voltage value of the first voltage is the electric value obtained by subtracting the on-voltage required by the power semiconductor device from the voltage value of the single power supply The second reference voltage module is used for generating a second voltage according to the single power supply, the voltage value of the second voltage is the voltage value of the turn-off voltage required by the power semiconductor device, and the switch control module is used for judging whether the first voltage is greater than a preset voltage;
when the first voltage is greater than the preset voltage, the switch control module cuts off the electrical connection with the second reference voltage module and controls the first voltage to be transmitted to the output module, and the output module is used for performing power amplification output on the first voltage so that the single power supply distributes a stable turn-on voltage and a turn-off voltage which changes along with the change of the supply voltage of the single power supply;
when the first voltage is less than or equal to the preset voltage, the switch control module is electrically connected with the second reference voltage module and controls the second voltage to be transmitted to the output module, and the output module is used for performing power amplification output on the second voltage, so that the single power supply distributes a stable turn-off voltage and a turn-on voltage which changes along with the change of the supply voltage of the single power supply.
Further, the first reference voltage module includes a first operational amplifier, a first electronic switch and a first current source, an output end of the first operational amplifier is electrically connected to a first end of the first electronic switch, a non-inverting input end of the first operational amplifier inputs a first reference voltage, the first reference voltage is equal to the first voltage, an inverting input end of the first operational amplifier is electrically connected to a second end of the first electronic switch, the second end of the first electronic switch is further grounded through the first current source, and a third end of the first electronic switch is electrically connected to the single power supply.
Further, the second reference voltage module includes a second operational amplifier, a second electronic switch and a second current source, an output end of the second operational amplifier is electrically connected to a first end of the second electronic switch, a non-inverting input end of the second operational amplifier inputs a second reference voltage, the second reference voltage is equal to the second voltage, an inverting input end of the second operational amplifier is electrically connected to a second end of the second electronic switch, the second end of the second electronic switch is further grounded through the second current source, and a third end of the second electronic switch is electrically connected to the single power source.
Further, the switch control module includes third to ninth electronic switches, third to fourth current sources and a resistor, a first end of the third electronic switch is grounded through the third current source, a second end of the third electronic switch is electrically connected to the second end of the first electronic switch, a second end of the third electronic switch is further electrically connected to the output module, a third end of the third electronic switch is electrically connected to the second end of the second electronic switch, a first end of the fourth electronic switch is electrically connected to the first end of the third electronic switch, a second end of the fourth electronic switch is electrically connected to the second end of the third electronic switch, a third end of the fourth electronic switch is electrically connected to the first end of the third electronic switch, and a first end of the fifth electronic switch is electrically connected to the first end of the sixth electronic switch, the second terminal of the fifth electronic switch is electrically connected with the second terminal of the third electronic switch, the third terminal of the fifth electronic switch is electrically connected with the first terminal of the third electronic switch, the second terminal of the sixth electronic switch is electrically connected with the second terminal of the third electronic switch, the third terminal of the sixth electronic switch is electrically connected with the first terminal of the sixth electronic switch, the third terminal of the sixth electronic switch is further electrically connected with the third terminal of the eighth electronic switch through the fourth current source, the first terminal of the eighth electronic switch is electrically connected with the first terminal of the ninth electronic switch, the second terminal of the eighth electronic switch is grounded, the second terminal of the ninth electronic switch is grounded, the third terminal of the ninth electronic switch is electrically connected with the third terminal of the seventh electronic switch, and the third terminal of the ninth electronic switch is further electrically connected with the first terminal of the ninth electronic switch, the first end of the seventh electronic switch is electrically connected with a power supply, and the second end of the seventh electronic switch is electrically connected with the second end of the third electronic switch through the resistor.
Further, the first electronic switch, the second electronic switch, the eighth electronic switch, and the ninth electronic switch are all N-channel fets, first ends, second ends, and third ends of the first electronic switch, the second electronic switch, the eighth electronic switch, and the ninth electronic switch respectively correspond to gates, sources, and drains of the N-channel fets, the third electronic switch to the seventh electronic switch are all P-channel fets, and the first ends, second ends, and third ends of the third electronic switch to the seventh electronic switch respectively correspond to gates, sources, and drains of the P-channel fets.
Further, the output module includes a third operational amplifier, a non-inverting input terminal of the third operational amplifier is electrically connected to the second terminal of the first electronic switch, and an inverting input terminal of the third operational amplifier is electrically connected to an output terminal of the third operational amplifier.
Further, the power semiconductor device is an IGBT or SiC.
The power semiconductor device on-off voltage generating circuit is provided with a first reference voltage module and a second reference voltage module, so that the first reference voltage module and the second reference voltage module respectively generate a first voltage and a second voltage according to a single power supply, and a switch control module compares the first voltage with a preset voltage so as to distribute a stable on-voltage and an off-voltage which changes along with the change of the power supply voltage of the single power supply from the single power supply when the first voltage is greater than the preset voltage, and distribute an off-voltage required by the power semiconductor device and an on-voltage which changes along with the change of the power supply voltage of the single power supply from the single power supply when the first voltage is less than or equal to the preset voltage. Therefore, the on-voltage and the off-voltage required by the power semiconductor device can be generated by the single power supply, so that the design is simplified, and the cost is saved.
Drawings
Fig. 1 is a block diagram of a preferred embodiment of the power semiconductor device turn-on and turn-off voltage generating circuit of the present invention.
Fig. 2 is a circuit diagram of a preferred embodiment of the power semiconductor device turn-on and turn-off voltage generating circuit of the present invention.
Description of the main elements
Power semiconductor device turn-on and turn-off voltage generating circuit 100
First reference voltage module 20
Second reference voltage module 30
Switch control module 40
Operational amplifiers OP1, OP2, OP3
Current sources I1, I2, I3, I4
Electronic switches Q1, Q2, Q3, Q4, Q5,
Q6、Q7、Q8、Q9
Resistance R
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, the present invention provides a power semiconductor device turn-on and turn-off voltage generating circuit 100. The power semiconductor device turn-on and turn-off voltage generating circuit 100 is electrically connected to a turn-on module (not shown) and a turn-off module (not shown) of the power semiconductor device to generate a corresponding turn-on voltage and a corresponding turn-off voltage for the turn-on module and the turn-off module, respectively. In the present embodiment, the power semiconductor device on-off voltage generation circuit 100 is applied to an integrated circuit, and the power semiconductor device may be an IGBT, and in other embodiments, the power semiconductor device may also be SiC.
The power semiconductor device turn-on and turn-off voltage generating circuit 100 includes a single power supply 10, a first reference voltage module 20, a second reference voltage module 30, a switch control module 40, and an output module 50. One end of the first reference voltage module 20 and one end of the second reference voltage module 30 are electrically connected to the single power supply 10, and the other end of the first reference voltage module 20 and the other end of the second reference voltage module 30 are electrically connected to the switch control module 40. The switch control module 40 is also electrically connected to the output module 50.
The single power supply 10 is used to supply power for generating the on-voltage and the off-voltage of the power semiconductor device, and the supply voltage thereof may fluctuate within a certain range. The first reference voltage module 20 is configured to generate a first voltage according to the single power supply 10. The voltage value of the first voltage is the voltage value of the single power supply 10 minus the voltage value of the turn-on voltage required by the power semiconductor device. The second reference voltage module 30 is configured to generate a second voltage according to the single power supply 10. The voltage value of the second voltage is the voltage value of the turn-off voltage required by the power semiconductor device. The switch control module 40 is configured to determine whether the first voltage is greater than a predetermined voltage.
When the switch control module 40 determines that the first voltage is greater than the preset voltage, the switch control module 40 cuts off the electrical connection with the second reference voltage module 30, and controls the first voltage to be transmitted to the output module 50, and the output module 50 is configured to perform power amplification output on the first voltage, so that the single power supply 10 distributes a stable on-voltage and an off-voltage that varies with a variation in the supply voltage of the single power supply 10.
When the switch control module 40 determines that the first voltage is less than or equal to the preset voltage, the switch control module 40 turns on the electrical connection with the second reference voltage module 20, and controls the second voltage to be transmitted to the output module 50, and the output module 50 is configured to perform power amplification output on the second voltage, so that the single power supply 10 distributes a stable turn-off voltage and a turn-on voltage that changes with a change of the supply voltage of the single power supply 10.
Specifically, when the single power supply 10 distributes a stable turn-on voltage, another turn-off voltage distributed by the single power supply 10 will vary with the supply voltage of the single power supply 10, but will not affect the turn-off function of the turn-off voltage. Similarly, when the single power supply 10 distributes a stable turn-off voltage, another turn-on voltage distributed by the single power supply 10 will vary with the supply voltage variation of the single power supply 10, but does not affect the turn-on function of the turn-on voltage. Therefore, the single power supply 10 which supplies power with voltage fluctuating in a certain range can be used for generating the on-voltage and the off-voltage required by the power semiconductor device, the design is simplified, and the cost is saved.
Referring to fig. 2, fig. 2 is a circuit diagram of a preferred embodiment of the invention. In this embodiment, the voltage value provided by the single power supply 10 is VDD _ HV. The first reference voltage module 20 includes an operational amplifier OP1, an electronic switch Q1, and a current source I1. The output end of the operational amplifier OP1 is electrically connected to the first end of the electronic switch Q1, the non-inverting input end of the operational amplifier OP1 inputs a first reference voltage VREF1, the inverting input end of the operational amplifier OP1 is electrically connected to the second end of the electronic switch Q1, the second end of the electronic switch Q1 is also grounded through the current source I1, and the third end of the electronic switch Q1 is electrically connected to the single power source 10. The operational amplifier OP1, the electronic switch Q1 and the current source I1 constitute a voltage negative feedback closed loop circuit, wherein the electronic switch Q1 provides a driving current, the current source I1 provides a bias current, and the operational amplifier OP1 realizes a closed loop negative feedback. In the present embodiment, the turn-on voltage of the power semiconductor device is 15V, the first reference voltage VREF1 is VDD _ HV-15V, and the first voltage is equal to the first reference voltage VREF 1.
The second voltage reference module 30 includes an operational amplifier OP2, an electronic switch Q2, and a current source I2. The output end of the operational amplifier OP2 is electrically connected to the first end of the electronic switch Q2, the non-inverting input end of the operational amplifier OP2 inputs a second reference voltage, the inverting input end of the operational amplifier OP2 is electrically connected to the second end of the electronic switch Q2, the second end of the electronic switch Q2 is also grounded through the current source I2, and the third end of the electronic switch Q2 is electrically connected to the single power supply 10. The operational amplifier OP2, the electronic switch Q2 and the current source I2 constitute a voltage negative feedback closed loop circuit, wherein the electronic switch Q2 provides a driving current, the current source I2 provides a bias current, and the operational amplifier OP2 realizes a closed loop negative feedback. In the present embodiment, the off-state voltage of the power semiconductor device is 5.5V, the second reference voltage VREF2 is 5.5V, and the second voltage is equal to the second reference voltage VREF 2.
The switch control module 40 includes seven electronic switches Q3-Q9, two current sources I3-I4, and a resistor R. The first terminal of the electronic switch Q3 is grounded through the current source I3, the second terminal of the electronic switch Q3 is electrically connected to the second terminal of the electronic switch Q1, the second terminal of the electronic switch Q3 is also electrically connected to the output module 50, and the third terminal of the electronic switch Q3 is electrically connected to the second terminal of the electronic switch Q2. A first terminal of the electronic switch Q4 is electrically connected to a first terminal of the electronic switch Q3, a second terminal of the electronic switch Q4 is electrically connected to a second terminal of the electronic switch Q3, and a third terminal of the electronic switch Q4 is electrically connected to a first terminal of the electronic switch Q3.
A first terminal of the electronic switch Q5 is electrically connected to a first terminal of the electronic switch Q6, a second terminal of the electronic switch Q5 is electrically connected to a second terminal of the electronic switch Q3, and a third terminal of the electronic switch Q5 is electrically connected to a first terminal of the electronic switch Q3. The second terminal of the electronic switch Q6 is electrically connected to the second terminal of the electronic switch Q3, the third terminal of the electronic switch Q6 is electrically connected to the first terminal of the electronic switch Q6, and the third terminal of the electronic switch Q6 is also electrically connected to the third terminal of the electronic switch Q8 via the current source I4. The electronic switch Q5 and the electronic switch Q6 form a current mirror, i.e., the electronic switch Q5 can mirror the current of the electronic switch Q6. In this embodiment, the current flowing through the current source I4 is equal to the current flowing through the current source I3.
The first terminal of the electronic switch Q8 is electrically connected to the first terminal of the electronic switch Q9, and the second terminal of the electronic switch Q8 is grounded. The second terminal of the electronic switch Q9 is grounded, the third terminal of the electronic switch Q9 is electrically connected to the third terminal of the electronic switch Q7, and the third terminal of the electronic switch Q9 is also electrically connected to the first terminal of the electronic switch Q9. The electronic switch Q8 and the electronic switch Q9 form a current mirror, i.e., the electronic switch Q8 can mirror the current of the electronic switch Q9.
The first terminal of the electronic switch Q7 is electrically connected to a power supply VDD, and the second terminal of the electronic switch Q7 is electrically connected to the second terminal of the electronic switch Q3 through the resistor R. The electronic switch Q7 and the resistor R form a voltage detection unit for detecting whether the first voltage outputted from the second terminal of the electronic switch Q1 exceeds a preset voltage. In this embodiment, the power supply VDD is an internal 5V power supply of the integrated chip, and the preset voltage is a voltage that can turn on the electronic switch Q7, for example, 5.5V.
The output module 50 includes an operational amplifier OP 3. The non-inverting input terminal of the operational amplifier OP3 is electrically connected to the second terminal of the electronic switch Q1, the inverting input terminal of the operational amplifier OP3 is electrically connected to the output terminal of the operational amplifier OP3, and the output terminal of the operational amplifier OP3 is electrically connected to a turn-on module (not shown) and a turn-off module (not shown) of the power semiconductor device, so as to generate a corresponding turn-on voltage and a corresponding turn-off voltage for the turn-on module and the turn-off module, respectively.
In operation, when the voltage detection unit formed by the electronic switch Q7 and the resistor R detects that the first voltage exceeds the predetermined voltage, the electronic switch Q7 is turned on and generates a current flowing through the electronic switch Q9, which increases as the first voltage increases, at which time the electronic switch Q8 mirrors the current flowing through the electronic switch Q9, which is limited by the current source I4 and then flows through the electronic switch Q6, the electronic switch Q5 mirrors the current flowing through the electronic switch Q6, and the generated mirrored current flows through the current source I3 and then flows to ground, as the voltage provided by the single power supply 10 increases, the first voltage increases, the current flowing through the current source I3 can be provided by the electronic switch Q5 in its entirety, at which time the electronic switch Q4 will not flow current, the electronic switch Q3 will not have a bias voltage, and thus be in an off state, the second voltage module 30 can be isolated to ensure that the second voltage module Q4 will not flow a current, and the second voltage is applied to the second power amplifier VDD stabilized by the voltage regulator VDDH-V399685, which is applied to the second power amplifier VDD-VDD regulator 3615, which is applied to the second power amplifier VDD regulator.
When the voltage detection unit formed by the electronic switch Q7 and the resistor R detects that the first voltage is less than or equal to the preset voltage, the electronic switch Q7 is turned off, the electronic switch Q5, the electronic switch Q6, the electronic switch Q8 and the electronic switch Q9 do not have current flowing, at this time, the current generated by the current source I3 all flows through the electronic switch Q4, a bias voltage is generated on the electronic switch Q4, and the bias voltage will turn on the electronic switch Q3, at this time, the operational amplifier OP3 performs buffer power amplification on the second voltage with higher voltage to output a stable voltage VDD L for turning off the semiconductor power device, wherein VDD L VREF2 is 5.5V.
In this embodiment, the electronic switches Q1, Q2, Q8 and Q9 are all N-channel fets, and the first, second and third terminals of the electronic switches Q1, Q2, Q8 and Q9 correspond to the gate, source and drain of the N-channel fets, respectively. The electronic switches Q3-Q7 are P-channel field effect transistors, and the first end, the second end and the third end of each electronic switch Q3-Q7 correspond to the grid electrode, the source electrode and the drain electrode of the P-channel field effect transistor respectively.
The power semiconductor device turn-on and turn-off voltage generating circuit 100 is configured with the first reference voltage module 20 and the second reference voltage module 30, so that the first reference voltage module 20 and the second reference voltage module 30 respectively generate the first voltage and the second voltage according to the single power supply 10, and the switch control module 40 compares the first voltage with a preset voltage, so as to distribute a stable turn-on voltage and a variable turn-off voltage from the single power supply 10 when the first voltage is greater than the preset voltage, and distribute a stable turn-off voltage and a variable turn-on voltage from the single power supply 10 when the first voltage is less than or equal to the preset voltage. In this way, the single power supply 10 can generate the on-voltage and the off-voltage required by the power semiconductor device, thereby simplifying the design and saving the cost.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (7)
1. A power semiconductor device on-off voltage generating circuit comprises a single power supply with a power supply voltage fluctuating within a certain range, and is used for generating an on-voltage and an off-voltage for a power semiconductor device through the single power supply, and is characterized in that the power semiconductor device on-off voltage generating circuit further comprises a first reference voltage module, a second reference voltage module, a switch control module and an output module, wherein one end of the first reference voltage module and one end of the second reference voltage module are electrically connected with the single power supply, the other end of the first reference voltage module and the other end of the second reference voltage module are electrically connected with the switch control module, the switch control module is further electrically connected with the output module, the first reference voltage module is used for generating a first voltage according to the single power supply, the voltage value of the first voltage is the voltage value obtained by subtracting the turn-on voltage required by the power semiconductor device from the voltage value of the single power supply, the second reference voltage module is used for generating a second voltage according to the single power supply, the voltage value of the second voltage is the voltage value of the turn-off voltage required by the power semiconductor device, and the switch control module is used for judging whether the first voltage is greater than a preset voltage;
when the first voltage is greater than the preset voltage, the switch control module cuts off the electrical connection with the second reference voltage module and controls the first voltage to be transmitted to the output module, and the output module is used for performing power amplification output on the first voltage so that the single power supply distributes a stable turn-on voltage and a turn-off voltage which changes along with the change of the supply voltage of the single power supply;
when the first voltage is less than or equal to the preset voltage, the switch control module is electrically connected with the second reference voltage module and controls the second voltage to be transmitted to the output module, and the output module is used for performing power amplification output on the second voltage, so that the single power supply distributes a stable turn-off voltage and a turn-on voltage which changes along with the change of the supply voltage of the single power supply.
2. The power semiconductor device on-off voltage generating circuit according to claim 1, wherein the first reference voltage module comprises a first operational amplifier, a first electronic switch and a first current source, an output terminal of the first operational amplifier is electrically connected to a first terminal of the first electronic switch, a non-inverting input terminal of the first operational amplifier inputs a first reference voltage, the first reference voltage is equal to the first voltage, an inverting input terminal of the first operational amplifier is electrically connected to a second terminal of the first electronic switch, the second terminal of the first electronic switch is further grounded via the first current source, and a third terminal of the first electronic switch is electrically connected to the single power source.
3. The power semiconductor device on-off voltage generating circuit according to claim 2, wherein the second reference voltage module comprises a second operational amplifier, a second electronic switch and a second current source, an output terminal of the second operational amplifier is electrically connected to a first terminal of the second electronic switch, a non-inverting input terminal of the second operational amplifier inputs a second reference voltage, the second reference voltage is equal to the second voltage, an inverting input terminal of the second operational amplifier is electrically connected to a second terminal of the second electronic switch, the second terminal of the second electronic switch is further grounded through the second current source, and a third terminal of the second electronic switch is electrically connected to the single power source.
4. The power semiconductor device turn-on and turn-off voltage generating circuit according to claim 3, wherein the switch control module comprises third to ninth electronic switches, third to fourth current sources, and a resistor, a first terminal of the third electronic switch is grounded through the third current source, a second terminal of the third electronic switch is electrically connected to the second terminal of the first electronic switch, a second terminal of the third electronic switch is further electrically connected to the output module, a third terminal of the third electronic switch is electrically connected to the second terminal of the second electronic switch, a first terminal of the fourth electronic switch is electrically connected to the first terminal of the third electronic switch, a second terminal of the fourth electronic switch is electrically connected to the second terminal of the third electronic switch, and a third terminal of the fourth electronic switch is electrically connected to the first terminal of the third electronic switch, a first end of the fifth electronic switch is electrically connected with a first end of the sixth electronic switch, a second end of the fifth electronic switch is electrically connected with a second end of the third electronic switch, a third end of the fifth electronic switch is electrically connected with a first end of the third electronic switch, a second end of the sixth electronic switch is electrically connected with a second end of the third electronic switch, a third end of the sixth electronic switch is electrically connected with a first end of the sixth electronic switch, a third end of the sixth electronic switch is also electrically connected with a third end of the eighth electronic switch through the fourth current source, a first end of the eighth electronic switch is electrically connected with a first end of the ninth electronic switch, a second end of the eighth electronic switch is grounded, a second end of the ninth electronic switch is grounded, and a third end of the ninth electronic switch is electrically connected with a third end of the seventh electronic switch, the third terminal of the ninth electronic switch is further electrically connected to the first terminal of the ninth electronic switch, the first terminal of the seventh electronic switch is electrically connected to a power source, and the second terminal of the seventh electronic switch is electrically connected to the second terminal of the third electronic switch through the resistor.
5. The power semiconductor device on-and-off voltage generation circuit according to claim 4, wherein the first electronic switch, the second electronic switch, the eighth electronic switch, and the ninth electronic switch are all N-channel fets, first, second, and third ends of the first, second, eighth, and ninth electronic switches respectively correspond to gates, sources, and drains of the N-channel fets, the third through seventh electronic switches are all P-channel fets, and first, second, and third ends of the third through seventh electronic switches respectively correspond to gates, sources, and drains of the P-channel fets.
6. The power semiconductor device on and off voltage generation circuit of claim 2, wherein the output module comprises a third operational amplifier, a non-inverting input terminal of the third operational amplifier is electrically connected to the second terminal of the first electronic switch, and an inverting input terminal of the third operational amplifier is electrically connected to an output terminal of the third operational amplifier.
7. The power semiconductor device on and off voltage generation circuit according to claim 1, wherein the power semiconductor device is an IGBT or SiC.
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| CN202010376611.1A CN111416604A (en) | 2020-05-07 | 2020-05-07 | Power semiconductor device turn-on and turn-off voltage generating circuit |
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| CN202010376611.1A CN111416604A (en) | 2020-05-07 | 2020-05-07 | Power semiconductor device turn-on and turn-off voltage generating circuit |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103248227A (en) * | 2013-05-30 | 2013-08-14 | 杭州士兰微电子股份有限公司 | Switching power supply and switching power supply controller for realizing constant output current |
| CN103259408A (en) * | 2013-05-30 | 2013-08-21 | 杭州士兰微电子股份有限公司 | Switching power supply and switching power supply controller realizing constant output currents |
| CN106817093A (en) * | 2017-01-23 | 2017-06-09 | 宜确半导体（苏州）有限公司 | Radio-frequency power amplifier |
| CN111081291A (en) * | 2020-01-03 | 2020-04-28 | 深圳青铜剑科技股份有限公司 | Power supply circuit and method for nonvolatile memory |
| CN211908761U (en) * | 2020-05-07 | 2020-11-10 | 深圳青铜剑技术有限公司 | Power semiconductor device turn-on and turn-off voltage generating circuit |
-
2020
- 2020-05-07 CN CN202010376611.1A patent/CN111416604A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103248227A (en) * | 2013-05-30 | 2013-08-14 | 杭州士兰微电子股份有限公司 | Switching power supply and switching power supply controller for realizing constant output current |
| CN103259408A (en) * | 2013-05-30 | 2013-08-21 | 杭州士兰微电子股份有限公司 | Switching power supply and switching power supply controller realizing constant output currents |
| CN106817093A (en) * | 2017-01-23 | 2017-06-09 | 宜确半导体（苏州）有限公司 | Radio-frequency power amplifier |
| CN111081291A (en) * | 2020-01-03 | 2020-04-28 | 深圳青铜剑科技股份有限公司 | Power supply circuit and method for nonvolatile memory |
| CN211908761U (en) * | 2020-05-07 | 2020-11-10 | 深圳青铜剑技术有限公司 | Power semiconductor device turn-on and turn-off voltage generating circuit |
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