CN111384140B

CN111384140B - Display panel, manufacturing method thereof and display device

Info

Publication number: CN111384140B
Application number: CN202010212365.6A
Authority: CN
Inventors: 屈财玉; 张慧娟; 王和金; 刘政; 郝艳军
Original assignee: BOE Technology Group Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2020-03-24
Filing date: 2020-03-24
Publication date: 2022-07-15
Anticipated expiration: 2040-03-24
Also published as: CN111384140A

Abstract

The invention provides a display panel, a manufacturing method thereof and a display device. Display panel includes the substrate base plate, is located display element on the substrate base plate, is located display element keeps away from the packaging layer of substrate base plate one side and is located the packaging layer is kept away from the solar cell module of substrate base plate one side, solar cell module is including falling the reflection stratum, it is used for reducing to coming to fall the reflection stratum the reflectivity of the light of display panel's light-emitting side. According to the display panel provided by the embodiment of the invention, the reflection reducing layer with low reflectivity is arranged in the integrated solar cell module, so that the reflection effect on external light is reduced, and the display effect of the display panel is improved.

Description

Display panel, manufacturing method thereof and display device

Technical Field

The invention relates to the technical field of display, in particular to a display panel, a manufacturing method thereof and a display device.

Background

An Active Matrix Organic Light Emitting Diode (AMOLED) display device is widely used in the display field because it has advantages of self-luminescence, wide viewing angle, fast response, low power consumption, and flexible display. The AMOLED display screen in the related technology can realize low power consumption with the integrated solar battery and reduce the volume of the whole machine, however, the display panel of the existing integrated solar battery module has poor reflection and absorption effects on light rays and can influence the display effect of the display panel.

Disclosure of Invention

The embodiment of the invention provides a display panel, a manufacturing method thereof and a display device, and aims to solve the problems that the display panel integrated with a solar cell module has poor light reflection and absorption effects and the display effect of the display panel is possibly influenced.

In a first aspect, an embodiment of the present invention provides a display panel, which includes a substrate, a display unit located on the substrate, a packaging layer located on a side of the display unit away from the substrate, and a solar cell module located on a side of the packaging layer away from the substrate, where the solar cell module includes a reflection reducing layer for reducing a reflectivity of light from a light exit side of the display panel.

Optionally, the solar cell module includes a first electrode layer, an intermediate dielectric layer, and a second electrode layer stacked along a direction away from the substrate base plate, the reflection reducing layer is an opaque conductive layer disposed between the first electrode layer and the intermediate dielectric layer, and an orthographic projection of the opaque conductive layer on the substrate base plate is located within an orthographic projection range of a non-opening area of the display panel on the substrate base plate.

Optionally, the surface of one side of the light-tight conductive layer, which is far away from the substrate base plate, is subjected to planarization treatment.

Optionally, the solar cell module includes a first electrode layer, an intermediate dielectric layer, and a second electrode layer stacked in a direction away from the substrate base plate, the antireflection layer multiplexes the intermediate dielectric layer, the intermediate dielectric layer includes a first dielectric layer and a second dielectric layer stacked in a stacked manner, and energy gaps of materials of the first dielectric layer and the second dielectric layer are different.

Optionally, one of the first dielectric layer and the second dielectric layer is an amorphous silicon layer, and the other is an amorphous silicon germanium layer.

Optionally, the solar cell module includes a first electrode layer, an intermediate dielectric layer, and a second electrode layer stacked along a direction away from the substrate base plate, the reflection reducing layer multiplexes the intermediate dielectric layer, the intermediate dielectric layer includes a porous silicon layer, and an orthographic projection on the substrate base plate is located within an orthographic projection range of a non-opening area of the display panel on the substrate base plate.

Optionally, the reflection reducing layer reuses at least two transparent film layers in the solar cell module, and the thicknesses of the at least two transparent film layers are adapted to reduce the reflectivity through interference cancellation.

Optionally, the solar cell module is reused as a polarizer of the display panel.

In a second aspect, an embodiment of the present invention provides a display device, including the display panel described in any one of the above.

In a third aspect, an embodiment of the present invention provides a method for manufacturing a display panel, including the following steps:

providing a substrate base plate;

manufacturing a display unit on the substrate base plate;

manufacturing a packaging layer on one side of the display unit far away from the substrate base plate;

the solar cell module is manufactured on one side, far away from the substrate base plate, of the packaging layer and comprises a reflection reducing layer, and the reflection reducing layer is used for reducing the reflectivity of light rays coming from the light emergent side of the display panel.

According to the display panel provided by the embodiment of the invention, the reflection reducing layer with low reflectivity is arranged in the integrated solar cell module, so that the reflection effect on external light is reduced, and the display effect of the display panel is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and for those skilled in the art, other drawings may be obtained according to the drawings without inventive labor.

Fig. 1A is a schematic structural diagram of a display panel according to an embodiment of the invention;

fig. 1B is a schematic view of another structure of a display panel according to an embodiment of the invention;

FIG. 2A is a schematic diagram of the total reflectivity of an integrated display panel with an amorphous silicon thin film solar cell structure;

FIG. 2B is a schematic diagram of the absorption spectrum range of amorphous silicon and amorphous silicon germanium;

FIG. 2C is a schematic view showing the light absorption characteristics of amorphous silicon;

FIG. 2D is a schematic diagram of the light absorption characteristics of amorphous silicon germanium;

FIG. 3A is a schematic diagram of an intermediate process of a display panel according to an embodiment of the present invention;

FIG. 3B is a schematic diagram of an intermediate process of the display panel according to the embodiment of the invention;

FIG. 3C is a schematic diagram of an intermediate process of the display panel according to the embodiment of the invention;

fig. 3D is a schematic structural diagram of a display panel according to an embodiment of the invention;

fig. 4 is a flowchart of a method for manufacturing a display panel according to an embodiment of the invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The invention provides a display panel.

As shown in fig. 1A, the display panel includes a substrate 101, a display unit 102 disposed on the substrate 101, an encapsulation layer 103 disposed on a side of the display unit 102 away from the substrate 101, and a solar cell module disposed on a side of the encapsulation layer 103 away from the substrate 101. Optionally, a buffer layer 104 may be disposed between the encapsulation layer 103 and the solar cell module as needed. The specific structure of the display unit 102 can refer to the related art, and is not further limited and described herein.

After the fabrication of the encapsulation layer 103 is completed to encapsulate the display unit 102, a solar cell module is further fabricated on a side of the encapsulation layer 103 away from the base substrate 101.

Referring to fig. 1A, in general, the solar cell module includes a first electrode layer 105, an intermediate dielectric layer, and a second electrode layer 108 stacked along a direction away from the substrate 101, wherein the first electrode layer 105 and the second electrode layer 108 respectively form two electrodes of the solar cell module, and since light absorbed by the solar cell module is incident from one side of the second electrode layer 108, the first electrode layer 105 is generally referred to as a lower electrode of the solar cell module, and the second electrode layer 108 is generally referred to as an upper electrode of the solar cell module.

In this embodiment, further set up in the solar module and fall the reflection stratum, should fall the reflection stratum and be used for reducing the reflectivity to the light that comes from the light-emitting side of display panel, that is to say, if light shines to display panel from the light-emitting side of display panel, the light that the nanometer reflection goes back can reduce, like this, when observing this display panel under the great condition of external environment light intensity, reduces the reverberation and leads to the dizzy possibility of user, helps improving display effect.

In one embodiment of the invention, the antireflection layer is used for multiplexing an intermediate medium layer of the solar cell, and the intermediate medium layer is formed by laminating two materials with different energy gaps.

As shown in fig. 1, specifically, the intermediate dielectric layer includes a first dielectric layer 107A and a second dielectric layer 107B which are stacked, and energy gaps of materials of the first dielectric layer 107A and the second dielectric layer 107B are different, so that light with different wavelengths can be absorbed by the first dielectric layer 107A and the second dielectric layer 107B, respectively, thereby improving an absorption effect on the light.

According to the display panel provided by the embodiment of the invention, the intermediate dielectric layer is formed by arranging two materials with different energy gaps, so that the absorption effect on light rays with different wavelengths can be improved, the reflection on the light rays is reduced, and the display effect is improved.

In one embodiment, one of the first dielectric layer 107A and the second dielectric layer 107B is an amorphous silicon layer and the other is an amorphous silicon germanium layer.

In this embodiment, the positions of the amorphous silicon layer and the amorphous silicon germanium layer may be adjustable, that is, the amorphous silicon germanium layer may be located on one side of the amorphous silicon layer close to the substrate 101, or the amorphous silicon germanium layer may be located on one side of the amorphous silicon layer far from the substrate 101.

Further, in a direction perpendicular to the substrate base plate 101, the thickness of the amorphous silicon layer is 200 to 600 nanometers, and specifically, may be 300 to 500 nanometers; the thickness of the amorphous silicon germanium film layer is 50 to 250 nanometers, and more specifically, may be 100 to 200 nanometers.

Due to the characteristic of multi-defects of the amorphous silicon, a p-n junction of the amorphous silicon is unstable, the photoconductivity is not obvious during illumination, and almost no effective charge collection exists. Therefore, the basic structure of a silicon-based solar cell is not a p-n junction but a p-i-n junction. Since undoped a-Si is weakly n-type, boron doping is required to form the P region, phosphorus doping to form the n region, and i is an undoped or lightly doped intrinsic layer.

The heavily doped p, n regions create a built-in potential inside the cell to collect charge. Meanwhile, the two can form ohmic contact with the conductive electrode to provide electric power for the outside. The i area is a photosensitive area, and the photogenerated electrons and holes in the area are the source of photovoltaic power. Incident light enters the i zone as much as possible, is absorbed to the maximum extent and is effectively converted into electric energy, so that the requirements of the i zone are to ensure that the incident light is absorbed to the maximum extent and a photon-generated carrier is transported to an external circuit to the maximum extent.

Fig. 2A is a total reflectance curve of a display panel integrated with an amorphous silicon thin film solar cell in the related art, in which the abscissa is wavelength in nm and the ordinate is total reflectance in percentage. Curve a represents the total reflectance of the display panel integrated with the amorphous silicon thin-film solar cell structure in which Mo (molybdenum) is used as the lower electrode of the solar cell, and curve B represents the total reflectance of the display panel integrated with the amorphous silicon thin-film solar cell structure in which MoTi (molybdenum-titanium alloy) is used as the lower electrode of the solar cell, and thus the reflectance of the amorphous silicon thin-film solar cell to the long-wave band is high.

As shown in fig. 2B and 2C, the amorphous silicon layer can mainly absorb light energy with a wavelength of about 480 nm, and mainly reflects green light and blue light. As shown in fig. 2B and 2D, amorphous silicon germanium can mainly absorb light energy with a wavelength of about 700 nm, and mainly reflects red light.

Therefore, the amorphous silicon layer and the amorphous silicon germanium layer are arranged as the intermediate medium layer, so that the absorption effect on most light rays in visible light can be improved, and the display effect is improved.

In another embodiment of the present invention, the antireflection layer is reused in the middle dielectric layer of the solar cell module, and the middle dielectric layer includes the porous silicon layer 107C.

Specifically, in the present embodiment, the intermediate dielectric layer includes the porous silicon layer 107C, and the surface of the porous silicon layer 107C has a plurality of porous structures, and the porous structures can provide a good reflection reduction effect.

The orthographic projection of the porous silicon layer 107C on the substrate base plate 101 is positioned in the range of the orthographic projection of the non-opening area of the display panel on the substrate base plate, so that the display effect is prevented from being influenced by shielding the opening area.

In the manufacturing process, as shown in fig. 3A, the first electrode layer 105 is first manufactured on the package layer, the first electrode layer 105 may be made of a transparent material, such as ITO (indium tin oxide), silver nanowires, or an opaque material, such as Mo (molybdenum), Ag (silver), or the like, then an amorphous silicon intermediate dielectric layer is manufactured, and finally the second electrode layer 108 is manufactured on the intermediate dielectric layer.

As shown in fig. 3A, in the process of fabricating the second electrode layer 108, a first portion 108A covering the first sub-region 107D of the intermediate medium layer is first fabricated, the first portion 108A of the second electrode layer 108 is fabricated by using a corrosion-resistant material, such as graphene, etc., the first sub-region 107D covered by the first portion 108A is separated from other regions of the intermediate medium layer not covered by the first portion by an insulating layer 107E, and the insulating layer may be made of SiOx (silicon oxide) or SiNx (silicon nitride), etc. The first portion 108A covers a relatively small percentage of the total interlevel dielectric layer.

Next, as shown in fig. 3B and 3C, the uncovered portion of the first portion 108A is formed into porous silicon, specifically, porous silicon can be formed by means of electrochemical etching.

The etching solution can be selected from HF (hydrofluoric acid) and H₂O₂(hydrogen peroxide) is mixed and is carried out under the condition of illumination, so that a part of the cell covered by the first part 108A generates voltage, the voltage of the lower electrode is transmitted to an area uncovered by the first part 108A, namely an area exposed by the amorphous silicon because the lower electrode is connected, so that a pressure difference is formed between the first part 108A and the exposed area of the amorphous silicon, an electrochemical reaction can be carried out in the corrosive liquid, the first part 108A is a cathode, the exposed area of the amorphous silicon is an anode, and the electrochemical reaction can be carried out in the exposed area of the amorphous silicon to generate porous silicon as shown in the following reaction formula (1). Generally, the aperture of the porous silicon is about 2-10nm, and the porous silicon has a remarkable reflection reduction effect.

Formula (1):

and (3) cathode reaction:

H₂O₂+2H⁺→2H₂O+2h⁺

2H⁺＝2e^-→H₂↑

and (3) anode reaction:

Si+4h⁺+4HF→SiF₄+4H⁺

SiF₄+2HF→H₂SiF₆

and (3) total reaction:

Si+H₂O₂+6HF→2H₂O+H₂SiF₆+H₂↑

in the process, the illumination is not only used as a light source of the solar cell to generate electric energy, but also can play a role in photocatalysis, and as the reaction generated on the amorphous silicon exposed area needs a hole, the photocatalysis reaction can promote the generation of the hole, which is beneficial to the reaction.

The electrochemical reaction of the uncovered area of the middle dielectric layer generates porous silicon, the exposed amorphous silicon can be converted into porous silicon, the surface of the porous silicon is rough, the number of gaps is large, the light absorption can be increased, and the reflection can be reduced.

As shown in fig. 3C, since the first sub-region 107D covered by the first portion 108A does not form porous silicon because no electrochemical reaction occurs, the proportion of the part of the interlayer dielectric layer to the whole interlayer dielectric layer is relatively small, and most of the interlayer dielectric layer uncovered by the first portion 108A undergoes electrochemical reaction to form the porous silicon layer 107C.

Further, as shown in fig. 3D, a second portion 108B of the second electrode layer 108 is formed on the porous silicon structure, and the electrode may be ITO, graphene, carbon nanotube, or the like. Thus, the solar cell module is completed. Finally, with further reference to the related art, an Over Coating (OC) 109 or a passivation layer may be formed.

In yet another embodiment of the present invention, the display panel includes an opaque conductive layer 106, and the opaque conductive layer 106 is located between the first electrode layer 105 and the intermediate dielectric layer.

In the technical solution of this embodiment, the opaque conductive layer 106 is electrically connected to the first electrode layer 105 and the intermediate medium layer, that is, the opaque conductive layer 106 and the first electrode layer 105 together form a lower electrode of the solar cell module.

Thus, by providing the opaque conductive layer 106, the reflection effect of light can be reduced, which contributes to an improvement in the display effect. Further, as an alternative specific embodiment, an orthogonal projection of the opaque conductive layer 106 on the base substrate 101 coincides with an orthogonal projection of the first conductive layer on the base substrate 101.

It should be understood that the technical solutions of the embodiments of the present invention may be used independently, or may be used in combination with each other, and all can achieve the corresponding technical effects.

Alternatively, as shown in fig. 1A and 1B, the display panel has an open region and a non-open region, and an orthogonal projection of the first electrode layer 105 on the substrate base plate 101 is located within a range of an orthogonal projection of the non-open region on the substrate base plate 101.

In this embodiment, the first electrode layer 105 is disposed in the non-open region of the display panel, and further, the distribution range of the intermediate medium layer is also controlled in the non-open region, so that the open region can be prevented from being shielded, and the non-open region can be fully utilized to manufacture the solar cell module.

It should be understood that the second electrode layer 108 is usually made of a light-transmissive material, such as ITO (indium tin oxide), so that the second electrode layer 108 may or may not remain in the opening region of the display panel.

Optionally, a surface of the opaque conductive layer 106 away from the substrate 101 is planarized.

In one embodiment, the thickness of the opaque conductive layer 106 is about 100 to 150 nm, and the surface of the lower electrode can be relatively flat by performing a planarization process on the opaque conductive film layer, thereby helping to reduce the occurrence of rainbow patterns due to light diffraction and improving the display effect.

As an optional specific implementation manner, in each of the above embodiments, the solar cell module is reused as a polarizer of the display panel.

That is to say, since the solar cell module has a better reflection reducing effect, the reflection effect of light can be reduced, and thus, a polarizer is not required to be arranged, which is beneficial to reducing the cost and is beneficial to reducing the thickness of the display panel.

In addition, due to the arrangement of the solar cell module, certain electric energy can be provided, energy consumption is saved, and cruising ability is improved.

The embodiment of the invention also provides a display device which comprises any one of the display panels.

The display device may specifically be at least one of a mobile phone, a tablet computer, a digital camera, a laptop portable computer, a vehicle-mounted computer, a wearable device, but not limited thereto. Since the display device of this embodiment includes all technical solutions of the display panel embodiments, at least all technical effects can be achieved, and details are not described here.

Next, a specific manufacturing method of the display panel is further described.

In implementation, a substrate 101 is provided, then the substrate 101 is cleaned, a double-layer PI (polyimide) adhesive is coated, a PI thin film of about 10 μm is formed by curing at 300-400 ℃, and a Thin Film Transistor (TFT) device structure, an organic light emitting material (EL) evaporation coating, and a thin film package (TFE) are manufactured according to a conventional process, which is referred to related technologies and is not described herein again.

Next, a buffer layer 104104 is fabricated, and the buffer layer 104104 is formed by depositing a silicon dioxide material with a thickness of 100 to 500 nm as the buffer layer 104104, typically by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process.

Next, Mo is patterned by magnetron sputtering (Sputter) about 300 to 400 nm and then by exposure etching process (Mask process) as the first electrode layer 105 of the solar cell module.

In one embodiment, the same Mask (Mask) used to fabricate the first electrode layer 105 is used to fill the opaque conductive layer 106 with a thickness of 100 to 150 nm at the Mo patterned position, which can serve as a planarization function, and can also serve as a light absorbing material to reduce the reflectivity.

Next, amorphous silicon with a thickness of 300 to 500 nm is deposited as an intermediate dielectric layer by means of PECVD.

In another embodiment, after the first electrode layer 105 is fabricated, amorphous silicon with a thickness of 300 to 500 nm is deposited as the first dielectric layer 107A by PECVD, and then amorphous silicon germanium with a thickness of 100 to 200 nm is deposited as the second dielectric layer 107B.

In yet another embodiment, after the first electrode layer 105 is fabricated, 100 to 200 nm of amorphous silicon germanium is deposited as the first dielectric layer 107A by PECVD, and then 300 to 500 nm of amorphous silicon semiconductor is deposited as the second dielectric layer 107B.

In yet another embodiment, the same Mask (Mask) used to fabricate the first electrode layer 105 is used to fill the conductive opaque conductive layer 106 with a thickness of 100-150 nm at the Mo patterned position, and then an amorphous silicon layer with a thickness of 300-500 nm is deposited by PECVD as the first dielectric layer 107A, and then an amorphous silicon germanium layer with a thickness of 100-200 nm is deposited as the second dielectric layer 107B. Obviously, in this embodiment, 100 to 200 nm of amorphous silicon germanium may be deposited as the first dielectric layer 107A by PECVD, and then 300 to 500 nm of amorphous silicon semiconductor may be deposited as the second dielectric layer 107B.

Finally, a second electrode layer 108 is fabricated, and specifically, about 400 to 700 nm of ITO is deposited as the second electrode layer 108, or called as an upper electrode of the solar cell module, so that the fabrication of the solar cell module is completed. Finally, the capping layer (OC) 109 may be fabricated by further referring to the related art.

step 401: providing a substrate base plate;

step 402: manufacturing a display unit on the substrate base plate;

step 403: manufacturing a packaging layer on one side of the display unit far away from the substrate base plate;

step 404: the solar cell module is manufactured on one side, far away from the substrate base plate, of the packaging layer and comprises a reflection reducing layer, and the reflection reducing layer is used for reducing the reflectivity of light rays coming from the light emergent side of the display panel.

In a specific implementation manner of this embodiment, steps 401 to 403 all refer to related technologies, which are not further limited and described herein.

In the process of manufacturing the solar cell module in step 404, a step of manufacturing a reflection reducing layer is further added to manufacture the solar cell module with the reflection reducing layer.

Since the display panel in the display panel embodiment can be manufactured in this embodiment, at least all of the technical effects can be achieved, and details are not described here.

Furthermore, in some other specific embodiments of this embodiment, the reflection reducing layer is the opaque electrode layer in the above embodiment, and the opaque electrode layer can be manufactured by using the same mask for manufacturing the first electrode layer, so as to achieve the effect of reducing the cost.

In another specific implementation manner of this embodiment, the detailed manufacturing process of the antireflection layer multiplexing the middle dielectric layer of the display panel may refer to the above embodiment or related technologies, and is not described herein again.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and shall cover the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A display panel is characterized by comprising a substrate base plate, a display unit, a packaging layer and a solar cell module, wherein the display unit is positioned on the substrate base plate, the packaging layer is positioned on one side, far away from the substrate base plate, of the display unit, the solar cell module is positioned on one side, far away from the substrate base plate, of the packaging layer, the solar cell module comprises a reflection reducing layer, and the reflection reducing layer is used for reducing the reflectivity of light rays from the light-emitting side of the display panel;

the solar cell module comprises a first electrode layer, an intermediate dielectric layer and a second electrode layer which are stacked along the direction far away from the substrate, the antireflection layer is used for multiplexing the intermediate dielectric layer, the intermediate dielectric layer comprises a porous silicon layer, and the orthographic projection of the porous silicon layer on the substrate is positioned in the range of the orthographic projection of the non-opening area of the display panel on the substrate;

the second electrode layer comprises a first part covering the first subarea of the intermediate medium layer; the first partial area covered by the first part is separated from other areas of the uncovered middle medium layer by an insulating layer;

the other area of the middle dielectric layer which is not covered by the first part is of a porous silicon structure;

a second portion of a second electrode layer is on the porous silicon structure and the insulating layer.

2. A display device characterized by comprising the display panel according to claim 1.

3. A manufacturing method of a display panel is characterized by comprising the following steps:

providing a substrate base plate;

manufacturing a display unit on the substrate base plate;

manufacturing a solar cell module on one side of the packaging layer far away from the substrate base plate;

the manufacturing of the solar cell module on the side, far away from the substrate, of the packaging layer specifically comprises the following steps:

forming a first electrode layer on the encapsulation layer;

forming an amorphous silicon intermediate medium layer on the first electrode layer;

manufacturing a first part of a second electrode layer covering the first sub-area of the middle medium layer; the first partial area covered by the first part is separated from other areas of the uncovered middle medium layer by the insulating layer;

forming porous silicon on the uncovered part of the first part by means of electrochemical corrosion;

fabricating a second portion of a second electrode layer on the porous silicon structure and the insulating layer;

the solar cell module comprises a reflection reducing layer, the reflection reducing layer is used for multiplexing the intermediate medium layer, and the reflection reducing layer is used for reducing the reflectivity of light rays from the light-emitting side of the display panel.