CN111382508B - Design method of physical visualization simulation platform of semiconductor device based on data model - Google Patents
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- 238000004088 simulation Methods 0.000 title claims abstract description 81
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000013499 data model Methods 0.000 title claims abstract description 20
- 238000012800 visualization Methods 0.000 title claims abstract description 20
- 238000013461 design Methods 0.000 title claims abstract description 16
- 238000004364 calculation method Methods 0.000 claims abstract description 24
- 238000013178 mathematical model Methods 0.000 claims abstract description 16
- 230000000007 visual effect Effects 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 15
- 230000006870 function Effects 0.000 claims description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 230000003993 interaction Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 230000008520 organization Effects 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
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- 230000029087 digestion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
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Abstract
The invention discloses a method for designing a physical visualization simulation platform of a semiconductor device based on a data model, which comprises the following steps: according to the structure and principle of three basic devices, establishing a characteristic mathematical model corresponding to the devices; integrating the model into a complete calculation scheme by using NumPy, and carrying out abstract processing by using Python language; a PyQt5 of Python is utilized to realize a graphical interface of the simulation platform; selecting a required simulation device; determining doping and related physical parameters of the selected simulation device; in the processed calculation scheme of doping and related physical parameter input, the rapid calculation of the intermediate result is realized, and the visual operation model of data and the visual output of simulation are realized on the graphic interface. According to the design method of the physical visualization simulation platform of the semiconductor device based on the data model, the designed platform can simulate the characteristics of the device according to the parameters of the device.
Description
Technical Field
The invention belongs to the technical field of physical simulation of semiconductor devices, and relates to a design method of a physical visualization simulation platform of a semiconductor device based on a data model.
Background
The physical simulation of the semiconductor device starts from the state and the movement of carriers in the device, a strict physical model and a mathematical model are established according to the geometric structure and the impurity distribution of the device, and the performance parameters of the device are obtained through operation.
The rapid development of semiconductor technology and the semiconductor industry requires a great deal of technical skill in the art. The market demand for talents has a guiding effect on the cultivation of college application type technical talents. With the rapid development of electronic, microelectronic and integrated circuit industries, higher requirements are also placed on the knowledge literacy of practitioners. Universities are a major basic course with important significance in the teaching process of electronic students, but the course has the characteristics of systematicness, strong theoretical nature, abstract concept, multiple physical formulas and the like, and students have certain difficulty in the learning and understanding process. Its teaching quality can have a direct impact on the learning of the professional course after the students.
The modern technical code tool is matched with the traditional classroom teaching content, so that the development is more convenient, a semiconductor device simulation platform which is more targeted to the teaching of semiconductor physics and devices is functionally used, theoretical teaching and simulation are combined, computer-aided teaching is truly realized, the defect that a blackboard is moved to a screen easily in multimedia teaching of only courseware is avoided, abstract theoretical knowledge is visualized, and the understanding and digestion of students to knowledge points are facilitated.
Some large-scale industrial simulation software has perfect functions, but is not flexible enough, and most of the large-scale industrial simulation software needs to pay high cost to be used, so that the large-scale industrial simulation software cannot be suitable for the characteristics of classroom teaching and post-class learning of students. In recent years, some universities and colleges at home and abroad use computing software to build different professional course experiment simulation teaching platforms to carry out simulation course experiments, and good teaching effects are obtained in professional course teaching, but the application to semiconductor physical and device courses is relatively less. Through research, the simulation characteristics of the platform of the semiconductor physical and device developed in the traditional domestic university are not enough, the functions are not perfect, and the interface interaction is relatively crude.
Disclosure of Invention
The invention aims to provide a design method of a physical visualization simulation platform of a semiconductor device based on a data model, wherein the designed platform can simulate the characteristics of the device according to the parameters of the device, and then the dynamic visualization output of the simulation is realized by using a strong Matplotlib drawing library in Python.
The technical scheme adopted by the invention is that the design method of the physical visualization simulation platform of the semiconductor device based on the data model is implemented according to the following steps:
step 1, establishing a characteristic mathematical model of a corresponding device according to the structures and principles of three basic devices, namely PN junction, MOSFET and BJT;
Step 2, integrating the model established in the step 1 into a complete calculation scheme by using NumPy, and carrying out abstraction processing by using Python language;
Step 3, implementing the graphical interface of the simulation platform by using PyQt5 of Python according to the calculation scheme after the abstract processing of the Python language in the step 2;
Step 4, selecting a required simulation device;
Step 5, determining doping and related physical parameters of the simulation device selected in the step 4;
And 6, inputting the doping and related physical parameters in the processed calculation scheme in the step 2, realizing the rapid calculation of the intermediate result, and realizing the visual operation model of the data and the visual output of the simulation on the graphical interface in the step 3.
The step 1 specifically comprises the following steps:
the characteristic mathematical model of the PN junction is as follows: the modeling is based on the seven characteristics of PN junction, specifically:
The n-region conduction band electron concentration is: （1）；
The n-region potential is: (2) Then: /(I) （3） ；
For n-region net donor concentration, then/>=/>Substituting (1) and taking natural logarithms from two sides to obtain:（4）；
And (3) obtaining a P region: （5）；
（6）；
Thermal voltage =0.0259，/> Space charge region width:
（7）；
Then: （8），
Also, a mathematical model is built based on the characteristics of the MOSFET, BJT.
The step 2 is specifically as follows:
step 2.1, extracting parameters in the model according to the mathematical model of the device established in the step 1, converting the parameters into a code language, and initializing variables:
Firstly, all characteristics prescribe default temperature to 300K, different substrate materials and related material parameter values to be any one of Si, ge and GaAs, Intrinsic carrier concentration, eg forbidden band width,/>Dielectric constant,/> Diffusion coefficient of P region and N region,/> Minority carrier lifetime of the P area and the N area are default values;
and 2.2, scientifically calculating the parameters in the step 2.1 by utilizing Numpy organization data.
The graphical interface in step 3 specifically includes:
The system entry module is a main interface for realizing interaction between a user and the system and is used for guiding the user to select a PN junction, a BJT and a MOSFET of a device to be simulated;
The device characteristic simulation module comprises five parts: title bar, parameter setting area, matplotlib drawing display area, quick operation result area and function button.
The system entry module mainly comprises four areas, namely a title bar, a Logo display area, a device simulation entry and a copyright information bar, wherein the device simulation entry mainly comprises four options: PN_junction, MOSFET, BJT and exit system, the first three options click to jump to the relevant function interface, click the exit system will end the monitoring cycle of the whole program, close the application.
The step 5 is as follows:
According to the different devices selected in the step 4, corresponding doping and related physical parameters are determined, and the optional materials in the PN junction are as follows: silicon, germanium, gallium arsenide, material related parameters on the interface after material selection: the intrinsic carrier concentration, forbidden band width, dielectric constant, and the like are filled in by the system, and then the doping concentrations of the N region and the P region, and the widths of the N region and the P region are input, if an external voltage exists, the magnitude of the external voltage is input.
The step 6 is specifically as follows:
after the parameter setting in the step 5 is completed, clicking the quick operation to output the intermediate parameters generated in the background calculation, and directly acquiring the intermediate parameters at a window interface;
After the simulation items are selected, clicking to start simulation, processing all data by a background, and finally visually displaying through a window, if comparison of simulation results under different parameters is required to be observed, directly adjusting numerical values, and clicking again to simulate, so that the comparison simulation results can be displayed in the same canvas;
If different projects need to be simulated, the canvas needs to be clicked to be emptied, and the operation is repeated.
The beneficial effects of the invention are as follows:
The present invention is directed to three basic devices involved in semiconductor device fabrication: MOSFET, PN junction, BJT, fifteen device characteristics in total, such as: the mathematical models of uniformly doping the potential of the PN junction space charge region, mutating the PN junction space charge density and the like are summarized, a complete calculation scheme is designed and integrated, the Python code language is used for abstracting the back logic, and an excellent graphical interface toolkit-PyQt 5 in the Python is adopted for manufacturing a simulation platform which is convenient to operate and has perfect functions. The platform can simulate the characteristics of the device according to the parameters of the device, and finally realizes the dynamic visual output of the simulation by using a strong Matplotlib drawing library in Python. After output, a certain parameter can be independently regulated to observe the influence on the integral physical characteristics of the device, so that the device is subjected to simulation analysis. The method has great help in course teaching and post-class study of students, and has remarkable practical significance.
Drawings
FIG. 1 shows simulation characteristics of PN junctions, MOSFETs and BJTs of three devices respectively implemented in a design method of a physical visualization simulation platform of a semiconductor device based on a data model;
FIG. 2 is a prototype diagram of a device simulation master interface in the design method of the physical visualization simulation platform of the semiconductor device based on the data model;
FIG. 3 is an overall framework of a device simulation module in the design method of the physical visualization simulation platform of the semiconductor device based on the data model of the invention;
FIG. 4 is a flow chart of device simulation in the design method of the physical visualization simulation platform of the semiconductor device based on the data model;
FIG. 5 is an overall simulation interface in the design method of the physical visualization simulation platform of the semiconductor device based on the data model;
fig. 6 shows a visual output result of a MOSFET part simulation in the design method of the physical visual simulation platform of the semiconductor device based on the data model.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description.
The technical scheme adopted by the invention is that the design method of the physical visualization simulation platform of the semiconductor device based on the data model is implemented according to the following steps:
Step 1, establishing a characteristic mathematical model of a corresponding device according to the structures and principles of three basic devices, namely PN junction, MOSFET and BJT; the method comprises the following steps:
the characteristic mathematical model of the PN junction is as follows: the modeling is based on the seven characteristics of PN junction, specifically:
The n-region conduction band electron concentration is: （1）；
The n-region potential is: (2) Then: /(I) （3） ；
For n-region net donor concentration, then/>=/>Substituting (1) and taking natural logarithms from two sides to obtain:（4）；
And (3) obtaining a P region: （5）；
（6）；
Thermal voltage =0.0259，/> Space charge region width:
（7）；
Then: （8），
Likewise, establishing a mathematical model according to the characteristics of the MOSFET and the BJT; as shown in fig. 1, the three devices (PN junction, MOSFET, BJT) respectively correspond to simulation characteristics;
Step 2, integrating the model established in the step 1 into a complete calculation scheme by using NumPy, and carrying out abstraction processing by using Python language; the method comprises the following steps:
step 2.1, extracting parameters in the model according to the mathematical model of the device established in the step 1, converting the parameters into a code language, and initializing variables:
Firstly, all characteristics prescribe default temperature to 300K, different substrate materials and related material parameter values to be any one of Si, ge and GaAs, Intrinsic carrier concentration, eg forbidden band width,/>Dielectric constant,/> Diffusion coefficient of P region and N region,/> Minority carrier lifetime of the P area and the N area are default values;
Step 2.2, scientifically calculating the parameters of the step 2.1 by utilizing Numpy organization data to form a calculation scheme;
step 2.3, abstract the calculation scheme by using Python language;
Step 3, implementing the graphical interface of the simulation platform by using PyQt5 of Python according to the calculation scheme after the abstract processing of the Python language in the step 2; the graphical interface specifically comprises:
The system entry module is a main interface for realizing interaction between a user and the system and is used for guiding the user to select a PN junction, a BJT and a MOSFET of a device to be simulated;
The device characteristic simulation module comprises five parts: title bar, parameter setting area, matplotlib drawing display area, quick operation result area, function buttons, as shown in figure 2, which is a prototype diagram of the device simulation main interface, and figure 3 is a simulation whole frame.
The system entry module mainly comprises four areas, namely a title bar, a Logo display area, a device simulation entry and a copyright information bar, wherein the device simulation entry mainly comprises four options: PN_junction, MOSFET, BJT and exit system, the first three options click to jump to the relevant function interface, click the exit system will end the monitoring cycle of the whole program, close the application;
Step 4, selecting a required simulation device;
Step 5, as shown in fig. 4, determining the doping and the related physical parameters of the simulation device selected in step 4, specifically: according to the different devices selected in the step 4, corresponding doping and related physical parameters are determined, and the optional materials in the PN junction are as follows: silicon, germanium, gallium arsenide, material related parameters on the interface after material selection: the intrinsic carrier concentration, the forbidden band width, the dielectric constant are filled in by the system, the doping concentrations of the N region and the P region and the widths corresponding to the N region and the P region are input, and if the external voltage exists, the magnitude of the external voltage is input;
Step 6, inputting the doping and related physical parameters in the processed calculation scheme in the step 2, realizing the rapid calculation of the intermediate result, and realizing the visual output of the data visual operation model and simulation on the graphical interface in the step 3, wherein the steps are as follows:
after the parameter setting in the step 5 is completed, clicking the quick operation to output the intermediate parameters generated in the background calculation, and directly acquiring the intermediate parameters at a window interface;
After the simulation items are selected, clicking to start simulation, processing all data by a background, and finally visually displaying through a window, if comparison of simulation results under different parameters is required to be observed, directly adjusting numerical values, and clicking again to simulate, so that the comparison simulation results can be displayed in the same canvas;
If different projects need to be simulated, the canvas needs to be cleaned by clicking, and the operation is repeated, as shown in FIG. 5, which is an overall simulation interface, and FIG. 6, which is a visual output of the MOSFET part simulation.
The invention relates to a design method and design of a physical visualization simulation platform of a semiconductor device based on a data model. For three basic devices involved in semiconductor device processing: MOSFET, PN junction, BJT, fifteen device characteristics in total, such as: the method comprises the steps of evenly doping the potential of a PN junction space charge region, summarizing mathematical models such as abrupt PN junction space charge density and the like, designing and integrating a complete calculation scheme, abstracting back logic by using Python code language, adopting an excellent graphical interface toolkit-PyQt 5 in Python to manufacture a simulation platform which is convenient to operate and perfect in function, simulating the characteristics of a device according to the parameters of the device, finally realizing simulated dynamic visual output by using a strong Matplotlib drawing library in Python, and independently adjusting a certain parameter after output to observe the influence on the integral physical characteristics of the device, thereby performing simulation analysis on the device. The method has great help in course teaching and post-class study of students, and has remarkable practical significance.
Claims (5)
1. The design method of the physical visualization simulation platform of the semiconductor device based on the data model is characterized by comprising the following steps of:
step 1, establishing a characteristic mathematical model of a corresponding device according to the structures and principles of three basic devices, namely PN junction, MOSFET and BJT;
Step 2, integrating the model established in the step 1 into a complete calculation scheme by using NumPy, and carrying out abstract processing by using Python language, wherein the method specifically comprises the following steps:
Step 2.1, extracting parameters in the model according to the mathematical model of the device established in the step 1, converting the parameters into a code language, and initializing variables:
Firstly, all characteristics prescribe default temperature to 300K, different substrate materials and related material parameter values to be any one of Si, ge and GaAs, Intrinsic carrier concentration, eg forbidden band width,/>Dielectric constant,/> Diffusion coefficient of P region and N region,/> Minority carrier lifetime of the P area and the N area are default values;
Step 2.2, scientifically calculating the parameters of the step 2.1 by utilizing Numpy organization data to form a calculation scheme;
step 2.3, abstract the calculation scheme by using Python language;
Step 3, implementing the graphical interface of the simulation platform by using PyQt5 of Python according to the calculation scheme subjected to abstraction processing by using the Python language in the step 2, wherein the graphical interface specifically comprises:
The system entry module is a main interface for realizing interaction between a user and the system and is used for guiding the user to select a PN junction, a BJT and a MOSFET of a device to be simulated;
the device characteristic simulation module comprises five parts: title bar, parameter setting area, matplotlib drawing display area, quick operation result area, function button;
Step 4, selecting a required simulation device;
Step 5, determining doping and related physical parameters of the simulation device selected in the step 4;
And 6, inputting the doping and related physical parameters in the processed calculation scheme in the step 2, realizing the rapid calculation of the intermediate result, and realizing the visual operation model of the data and the visual output of the simulation on the graphical interface in the step 3.
2. The method for designing a physical visualization simulation platform of a semiconductor device based on a data model according to claim 1, wherein the step 1 specifically comprises:
the characteristic mathematical model of the PN junction is as follows: the modeling is based on the seven characteristics of PN junction, specifically:
The n-region conduction band electron concentration is: （1）；
The n-region potential is: (2) Then: /(I) （3） ；
For n-region net donor concentration, then/>=/>Substituting (1) and taking natural logarithms from two sides to obtain:（4）；
And (3) obtaining a P region: （5）；
（6）；
Thermal voltage =0.0259，/> Space charge region width:
（7）；
Then: （8），
Also, a mathematical model is built based on the characteristics of the MOSFET, BJT.
3. The method for designing a physical visualization simulation platform of a semiconductor device based on a data model according to claim 1, wherein the system entry module mainly comprises four areas, namely a title bar, a Logo display area, a device simulation entry and a copyright information bar, and the device simulation entry mainly comprises four options: PN_junction, MOSFET, BJT and exit system, the first three options click to jump to the relevant function interface, click the exit system will end the monitoring cycle of the whole program, close the application.
4. The method for designing a physical visualization simulation platform of a semiconductor device based on a data model according to claim 2, wherein the step 5 is:
According to the different devices selected in the step 4, corresponding doping and related physical parameters are determined, and the optional materials in the PN junction are as follows: silicon, germanium, gallium arsenide, material related parameters on the interface after material selection: the intrinsic carrier concentration, forbidden band width, dielectric constant, and the like are filled in by the system, and then the doping concentrations of the N region and the P region, and the widths of the N region and the P region are input, if an external voltage exists, the magnitude of the external voltage is input.
5. The method for designing a physical visualization simulation platform of a semiconductor device based on a data model according to claim 4, wherein the step 6 specifically comprises:
after the parameter setting in the step 5 is completed, clicking the quick operation to output the intermediate parameters generated in the background calculation, and directly acquiring the intermediate parameters at a window interface;
After the simulation items are selected, clicking to start simulation, processing all data by a background, and finally visually displaying through a window, if comparison of simulation results under different parameters is required to be observed, directly adjusting numerical values, and clicking again to simulate, so that the comparison simulation results can be displayed in the same canvas;
If different projects need to be simulated, the canvas needs to be clicked to be emptied, and the operation is repeated.
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