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CN111372343A - Distributed microwave phase control method - Google Patents

Distributed microwave phase control method Download PDF

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Publication number
CN111372343A
CN111372343A CN201811598549.XA CN201811598549A CN111372343A CN 111372343 A CN111372343 A CN 111372343A CN 201811598549 A CN201811598549 A CN 201811598549A CN 111372343 A CN111372343 A CN 111372343A
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electric field
phase
field distribution
chamber
input ports
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黄家靖
蔡岳霖
陈叡宏
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • H05B6/66Circuits
    • H05B6/68Circuits for monitoring or control

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Constitution Of High-Frequency Heating (AREA)

Abstract

The invention discloses a distributed microwave phase control method, which comprises the following steps: enabling a plurality of phase control power modules to input microwaves into the cavity through each input port, and enabling the microwaves in the cavity to present a first electric field distribution; and enabling each phase control power module to adjust the phase of the microwave input into the cavity from each input port, so that the microwave in the cavity generates a second electric field distribution which is complementary to the first electric field distribution due to the change of the phase.

Description

分布式微波相位控制方法Distributed microwave phase control method

技术领域technical field

本发明涉及微波控制技术,尤其是涉及一种分布式微波相位控制方法。The invention relates to microwave control technology, in particular to a distributed microwave phase control method.

背景技术Background technique

传统微波加热技术是利用磁控管产生微波来对被加热物进行加热,然而此种加热方式的微波的电场强弱分布容易不均匀,使被加热物位于弱电场区的部分会因吸收强度较弱的电场而产生无显著加热的低受热区,而被加热物位于强电场区的部分会因吸收强度较强的电场而产生显著加热的高受热区,因此造成被加热物经过微波加热后形成加热不均匀的状况。The traditional microwave heating technology uses the magnetron to generate microwaves to heat the object to be heated. However, the electric field intensity distribution of the microwave in this heating method is easily uneven, so that the part of the object to be heated located in the weak electric field area will be affected by the higher absorption intensity. The weak electric field produces a low heating area without significant heating, and the part of the object to be heated in the strong electric field area will generate a high heating area with significant heating due to the absorption of the strong electric field, thus causing the heated object to be heated by microwaves. Uneven heating condition.

此外,为提高该被加热物于该低受热区的温度,一般可通过机械式转盘或微波搅拌器来改变该电场强弱分布,但其效果仍然有限。In addition, in order to increase the temperature of the object to be heated in the low heat-receiving area, the distribution of the electric field intensity can generally be changed by a mechanical turntable or a microwave stirrer, but the effect is still limited.

因此,如何有效进行区域性加热或者整体性的均匀加热,实为目前业界所亟待解决的课题之一。Therefore, how to effectively perform regional heating or overall uniform heating is one of the urgent issues to be solved in the current industry.

发明内容SUMMARY OF THE INVENTION

本发明提供一种分布式微波相位控制方法,可有效进行区域性加热或者整体性的均匀加热。The invention provides a distributed microwave phase control method, which can effectively perform regional heating or overall uniform heating.

本发明的分布式微波相位控制方法包括:提供内部具有一腔室的壳体,且于壳体上形成有多个连通腔室的输入端口;令多个相控功率模块通过各输入端口将微波输入至腔室中,以使腔室中的微波呈现第一电场分布;以及令各相控功率模块调整各输入端口输入至腔室的微波的相位,使得腔室中的微波因相位的变化产生与第一电场分布呈现互补的第二电场分布。The distributed microwave phase control method of the present invention includes: providing a casing with a chamber inside, and forming a plurality of input ports communicating with the chambers on the casing; allowing a plurality of phase-controlled power modules to transmit microwaves through each input port input into the cavity, so that the microwave in the cavity presents a first electric field distribution; and make each phase control power module adjust the phase of the microwave input into the cavity through each input port, so that the microwave in the cavity is generated due to the change of the phase The second electric field distribution is complementary to the first electric field distribution.

由上述可得知,本发明利用在壳体上形成分布式的输入端口阵列,再通过相控功率模块提供不同相位的微波给输入端口输入至腔室,可主动(有源)式的控制腔室内的微波于不同阶段的电场强弱分布的转换,并使得腔室内的微波于不同阶段的电场彼此呈现互补式电场分布,使腔室内的被加热物从不同阶段的互补式的电场分布中得到更加均匀的受热,进而改善传统加热器加热不均匀的现象。As can be seen from the above, the present invention utilizes a distributed input port array formed on the casing, and then provides microwaves of different phases to the input port through the phase-controlled power module for input to the chamber, and can actively (actively) control the chamber. The conversion of the electric field strength distribution of the microwaves in the chamber in different stages makes the electric fields of the microwaves in the chamber in different stages present complementary electric field distributions to each other, so that the heated object in the chamber can be obtained from the complementary electric field distributions in different stages. More uniform heating, thereby improving the uneven heating of traditional heaters.

附图说明Description of drawings

图1为应用本发明的分布式微波相位控制方法的系统示意图;Fig. 1 is the system schematic diagram of applying the distributed microwave phase control method of the present invention;

图2为本发明的分布式微波相位控制方法的示意流程图;Fig. 2 is the schematic flow chart of the distributed microwave phase control method of the present invention;

图3为本发明的输入端口于矩形的壳体上的第一实施例的透视图;3 is a perspective view of the first embodiment of the input port of the present invention on a rectangular housing;

图4为本发明图3的腔室的电场分布图;Fig. 4 is the electric field distribution diagram of the chamber of Fig. 3 of the present invention;

图5为本发明图4的腔室大小为2λ*2λ*1λ时的输入端口port1与输入端口port2之间的电场曲线图;5 is a graph of the electric field between the input port port1 and the input port port2 when the chamber size of FIG. 4 is 2λ*2λ*1λ of the present invention;

图6为本发明的相位匹配波的示意图;Fig. 6 is the schematic diagram of the phase matching wave of the present invention;

图7为本发明图4的相位匹配波于循环中的电场分布图;Fig. 7 is the electric field distribution diagram of the phase matching wave of Fig. 4 of the present invention in circulation;

图8为本发明图3所示的腔室中放置一圆心薄片的被加热物的示意图;Fig. 8 is the schematic diagram of the object to be heated with a central sheet placed in the chamber shown in Fig. 3 of the present invention;

图9为本发明图8的被加热物的温度分布图;Fig. 9 is the temperature distribution diagram of the object to be heated in Fig. 8 of the present invention;

图10为本发明的输入端口于矩形的壳体上的第二实施例的透视图;10 is a perspective view of a second embodiment of the input port of the present invention on a rectangular housing;

图11为本发明图10的被加热物的温度分布图;FIG. 11 is a temperature distribution diagram of the object to be heated in FIG. 10 of the present invention;

图12为本发明的输入端口于矩形的壳体上的第三实施例的透视图;12 is a perspective view of a third embodiment of the input port of the present invention on a rectangular housing;

图13为本发明图12的腔室的剖视电场分布图;以及13 is a cross-sectional electric field distribution diagram of the chamber of FIG. 12 of the present invention; and

图14为本发明的圆柱形的壳体的示意图。Figure 14 is a schematic view of the cylindrical housing of the present invention.

符号说明Symbol Description

1 壳体1 shell

2 相控功率模块2-Phase Power Modules

3 串行外设接口3 Serial peripheral interface

4 微处理器4 Microprocessor

5 腔室5 chambers

6 被加热物6 heated object

7 载台7 stage

8 电场分布8 Electric field distribution

51 第一电场曲线51 The first electric field curve

52 第二电场曲线52 Second electric field curve

61 驻波61 Standing wave

62 相位匹配波62 Phase-matched waves

A 节点A node

B 波峰B crest

C 波谷C trough

Port 输入端口Port input port

S1~S4 步骤。Steps S1 to S4.

具体实施方式Detailed ways

以下借由特定的具体实施例说明本发明的实施方式,熟悉此技术的人士可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。The embodiments of the present invention are described below by means of specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

需知,本说明书所附的附图所绘示的结构、比例、大小等,均仅用以配合说明书所揭示的内容,以供熟悉此技术的人士的了解与阅读,并非用以限定本发明可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如「第一」、「第二」及「第三」等用语,也仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当视为本发明可实施的范畴。It should be noted that the structures, proportions, sizes, etc. shown in the accompanying drawings of this specification are only used to cooperate with the contents disclosed in the specification for the understanding and reading of those who are familiar with the technology, and are not intended to limit the present invention. The limited conditions that can be implemented have no technical significance. Any modification of the structure, change of the proportional relationship or adjustment of the size should still fall within the scope of the present invention without affecting the effect and the purpose that the present invention can achieve. It is within the scope that the technical content disclosed in the present invention can cover. At the same time, terms such as "first", "second" and "third" quoted in this specification are only for the convenience of description and clarity, and are not used to limit the scope of implementation of the present invention. Changes or adjustments, without substantial changes to the technical content, should be regarded as the scope of the present invention.

请参阅图1,其为应用本发明的分布式微波相位控制方法的系统示意图,该系统包括:壳体1,内部具有一腔室5;多个输入端口(port),其位于壳体1上且连通该腔室;多个相控功率模块2,其连接各该输入端口,以提供微波至各该输入端口,使各该输入端口将该微波输入至腔室5中;串行外设接口3,其与各该相控功率模块2连接;以及微处理器4,其与串行外设接口3连接,并通过串行外设接口3控制各个相控功率模块2所输出的微波的功率及相位。Please refer to FIG. 1 , which is a schematic diagram of a system applying the distributed microwave phase control method of the present invention. The system includes: a casing 1 with a chamber 5 inside; a plurality of input ports (ports) located on the casing 1 and communicate with the chamber; a plurality of phase-controlled power modules 2 are connected to each of the input ports to provide microwaves to each of the input ports, so that each of the input ports inputs the microwaves into the chamber 5; a serial peripheral interface 3, which is connected with each of the phase-controlled power modules 2; and a microprocessor 4, which is connected with the serial peripheral interface 3, and controls the power of the microwave output by each phase-controlled power module 2 through the serial peripheral interface 3 and phase.

请参阅图2,其为本发明的分布式微波相位控制方法的示意流程图,包括:在步骤S1中,提供内部具有一腔室5的壳体1;在步骤S2中,在壳体1上形成多个连通该腔室5的输入端口;在步骤S3中,令多个相控功率模块2提供微波至各该输入端口,以由该输入端口将该微波输入至该腔室5中,进而使该腔室5中的微波呈现第一电场分布;以及在步骤S4中,令各该相控功率模块2调整各该输入端口输入至该腔室的微波的相位,使得该腔室中的微波因相位的变化产生与该第一电场分布呈现互补的第二电场分布。Please refer to FIG. 2 , which is a schematic flow chart of the distributed microwave phase control method of the present invention, including: in step S1 , a casing 1 with a chamber 5 inside is provided; in step S2 , on the casing 1 forming a plurality of input ports that communicate with the chamber 5; in step S3, a plurality of phase-controlled power modules 2 are made to provide microwaves to each of the input ports, so as to input the microwaves into the chamber 5 from the input ports, and then Make the microwaves in the cavity 5 exhibit a first electric field distribution; and in step S4, make each of the phase-controlled power modules 2 adjust the phase of the microwaves input to the cavity by the input ports, so that the microwaves in the cavity A second electric field distribution complementary to the first electric field distribution is generated due to the change in phase.

在一实施例中,壳体1为矩形、圆柱形或多边形,但不以此为限。In one embodiment, the casing 1 is rectangular, cylindrical or polygonal, but not limited thereto.

请参阅图3,其为在矩形的壳体1上设有多个输入端口(port)的第一摆设实施例的透视图,其中,在壳体1设有上下左右彼此对称的环形阵列的输入端口port1至port4。Please refer to FIG. 3 , which is a perspective view of a first arrangement embodiment in which a plurality of input ports are provided on a rectangular casing 1 , wherein the casing 1 is provided with a circular array of input ports symmetrical to each other. Ports port1 to port4.

在一实施例中,壳体1的腔室5的设计尺寸为:腔室5的Z轴长度为整数倍λ(微波波长),而腔室5的X及Y轴的长度为整数倍λ或该整数倍λ再加上0.5λ,但不以此为限。In one embodiment, the design size of the chamber 5 of the housing 1 is: the length of the Z axis of the chamber 5 is an integer multiple of λ (wavelength of microwave), and the length of the X and Y axes of the chamber 5 is an integer multiple of λ or The integer multiple of λ is plus 0.5λ, but not limited thereto.

请参阅图4,其为本发明于图3的壳体1执行分布式微波相位控制方法中的步骤S3与步骤S4的电场分布图,其中,1[1,0]是指port1[峰值功率大小为1瓦,微波的相位为0度],其他依此类推,另该壳体1的腔室5的尺寸依照该腔室5大小的设计的规则可分四种,第一种为1.5λ*1.5λ*1λ的倍数,第二种为2λ*2λ*1λ的倍数,第三种为2.5λ*2.5λ*1λ的倍数,第四种为3λ*3λ*1λ的倍数。Please refer to FIG. 4 , which is an electric field distribution diagram of step S3 and step S4 in the distributed microwave phase control method performed by the casing 1 of FIG. 3 , wherein 1[1,0] refers to port1[peak power size is 1 watt, the phase of the microwave is 0 degrees], and so on, and the size of the chamber 5 of the housing 1 can be divided into four types according to the design rules of the size of the chamber 5, the first one is 1.5λ* A multiple of 1.5λ*1λ, the second is a multiple of 2λ*2λ*1λ, the third is a multiple of 2.5λ*2.5λ*1λ, and the fourth is a multiple of 3λ*3λ*1λ.

由图4可知电场分布图依不同灰度色区分不同的电场强度,其中,灰度色由浅至深代表电场强度由低至高,而第一电场分布与第二电场分布互补是指第二电场分布图与第一电场分布图叠在一起时,第一电场分布图中(例如中间区域)的弱电场区重叠于第二电场分布图中(例如中间区域)的强电场区,或是第二电场分布图中(例如中间区域)的弱电场区重叠于第一电场分布图中(例如中间区域)的强电场区。It can be seen from Fig. 4 that the electric field distribution diagram distinguishes different electric field intensities according to different grayscale colors. The grayscale color from light to dark represents the electric field intensity from low to high, and the first electric field distribution and the second electric field distribution are complementary to the second electric field distribution. When the map and the first electric field distribution map are stacked together, the weak electric field region in the first electric field distribution map (for example, the middle region) overlaps the strong electric field region in the second electric field distribution map (for example, the middle region), or the second electric field The weak electric field region in the distribution map (eg, the middle region) overlaps the strong electric field region in the first electric field distribution map (eg, the middle region).

所述步骤S3令各相控功率模块2提供同相位的微波至各输入端口port1至port4,使各输入端口port1至port4将同相位的微波输入至腔室5中,进而使腔室5中的微波呈现第一电场分布,其中,第一电场分布呈驻波形式。In the step S3, each phase-controlled power module 2 provides microwaves of the same phase to the input ports port1 to port4, so that the input ports port1 to port4 input the microwaves of the same phase into the chamber 5, so that the microwaves in the chamber 5 are The microwave exhibits a first electric field distribution, wherein the first electric field distribution is in the form of a standing wave.

在一实施例中,所述步骤S4令各相控功率模块2将相对称的输入端口所输入至腔室的微波调整成互为相反相位(如相对称的port1及port3输入互为0或180度的相反相位的微波),使得腔室中的微波因相位的变化产生与第一电场分布呈现互补的第二电场分布,其中,第二电场分布为驻波形式。In one embodiment, the step S4 enables each phase-controlled power module 2 to adjust the microwaves input from the symmetrical input ports to the chamber to be in opposite phases to each other (for example, the symmetrical input ports of port1 and port3 are 0 or 180 to each other). degree of opposite phase microwave), so that the microwave in the chamber generates a second electric field distribution that is complementary to the first electric field distribution due to the phase change, wherein the second electric field distribution is in the form of standing waves.

在一实施例中,所述步骤S4令各相控功率模块2将相邻的输入端口所输入至腔室的微波调整成互为相反相位(如相邻的port1及port2输入互为0或180度的相反相位的微波),使得腔室中的微波因相位的变化产生与第一电场分布呈现互补的第二电场分布,其中,第二电场分布为驻波形式。In one embodiment, the step S4 enables each phase-controlled power module 2 to adjust the microwaves input from the adjacent input ports to the chamber to be in opposite phases to each other (for example, the inputs of adjacent port1 and port2 are 0 or 180 from each other). degree of opposite phase microwave), so that the microwave in the chamber generates a second electric field distribution that is complementary to the first electric field distribution due to the phase change, wherein the second electric field distribution is in the form of standing waves.

在一实施例中,所述步骤S4令各相控功率模块2将沿壳体1的各方位角度的方向上的各输入端口(如port1至port4)的微波,依序调整为具有一相位差,使得腔室中的微波因相位的变化产生相位匹配波形式的第二电场分布。In one embodiment, the step S4 enables each phase-controlled power module 2 to sequentially adjust the microwaves of the input ports (eg, port1 to port4) along the directions of each azimuth angle of the housing 1 to have a phase difference. , so that the microwave in the chamber generates a second electric field distribution in the form of a phase-matching wave due to the phase change.

请参考图5,其为图4的腔室5大小为2λ*2λ*1λ时的输入端口port1与输入端口port2之间的电场曲线图。Please refer to FIG. 5 , which is a graph of the electric field between the input port port1 and the input port port2 when the size of the chamber 5 in FIG. 4 is 2λ*2λ*1λ.

第一电场曲线51代表输入端口port1至port4的微波的相位为同相位时,位于输入端口port1与输入端口port2之间的驻波形式的电场曲线,第二电场曲线52代表输入端口port1至port4的相邻输入端口为相反相位时,位于输入端口port1与输入端口port2之间的驻波形式的电场曲线,其中,电场曲线的节点A代表弱电场区,位于强电场区中的波峰B或波谷C为强电场区中的较高电场值,相对的,强电场区越接近节点A的电场值越小。The first electric field curve 51 represents the electric field curve in the form of a standing wave between the input port port1 and the input port port2 when the phases of the microwaves at the input ports port1 to port4 are in the same phase, and the second electric field curve 52 represents the electric field curve of the input ports port1 to port4. When the adjacent input ports are in opposite phases, the electric field curve in the form of a standing wave between the input port port1 and the input port port2, where the node A of the electric field curve represents the weak electric field region, and the peak B or trough C in the strong electric field region is the higher electric field value in the strong electric field region. Relatively, the closer the strong electric field region is to node A, the smaller the electric field value.

由图5可知第一电场曲线51的节点A的位置在第二电场曲线52时是位于强电场区,而第二电场曲线52的节点A的位置在第一电场曲线51时是位于强电场区,换言之,电场曲线的互补的定义即为第一电场曲线51与第二电场曲线52彼此重叠时,第一电场曲线51的节点A的位置位于第二电场曲线52的强电场区,或是第二电场曲线52的节点A的位置位于第一电场曲线51的强电场区。需理解的是,由于驻波为原地震荡,故驻波的节点位置不会随时间改变,其次,由于输入端口port为微波馈入处,因此,驻波形式的第一电场曲线51与第二电场曲线52位于输入端口port1及输入端口port2边界为最高电场值的波峰B或波谷C。此外,由图5可见,第一电场曲线51及第二电场曲线52在输入端口port1及输入端口port2之间的中间区域呈现大致上互补的分布。It can be seen from FIG. 5 that the position of the node A of the first electric field curve 51 is located in the strong electric field region in the second electric field curve 52 , and the position of the node A of the second electric field curve 52 is in the strong electric field region in the first electric field curve 51 . , in other words, the complementary definition of the electric field curve is that when the first electric field curve 51 and the second electric field curve 52 overlap each other, the position of the node A of the first electric field curve 51 is located in the strong electric field region of the second electric field curve 52 , or the first electric field curve 52 The position of node A of the two electric field curves 52 is located in the strong electric field region of the first electric field curve 51 . It should be understood that since the standing wave oscillates in situ, the position of the node of the standing wave will not change with time. Secondly, since the input port port is the place where the microwave is fed, the first electric field curve 51 in the form of standing wave is different from the first electric field curve 51 in the form of standing wave. The two electric field curves 52 are located at the peak B or the trough C where the boundary between the input port port1 and the input port port2 is the highest electric field value. In addition, as can be seen from FIG. 5 , the first electric field curve 51 and the second electric field curve 52 exhibit substantially complementary distributions in the middle region between the input port port1 and the input port port2 .

请参考图6,其为本发明的相位匹配波的示意图,图6中的壳体1为图3的壳体1的平面图,假设输入端口port1所提供的微波的相位为0度、输入端口port2所提供的微波的相位为90度、输入端口port3所提供的微波的相位为180度、输入端口port4所提供的微波的相位为270度,细箭头所示的驻波61形式的微波会由相位低的输入端口往相位高的输入端口传输,且输入端口port1至port4以环形阵列设置在壳体1上,因此,如细箭头所标示的驻波61形式的微波会从输入端口port1至输入端口port4产生循环,形成粗箭头所示的相位匹配波62,由于相位匹配波62会在循环的路径进行移动,因此,相位匹配波62的节点位置会随时间改变。Please refer to FIG. 6 , which is a schematic diagram of a phase-matched wave of the present invention. The housing 1 in FIG. 6 is a plan view of the housing 1 in FIG. 3 . It is assumed that the phase of the microwave provided by the input port port1 is 0 degrees, and the input port port2 The phase of the microwave provided is 90 degrees, the phase of the microwave provided by the input port port3 is 180 degrees, and the phase of the microwave provided by the input port port4 is 270 degrees. The low input port transmits to the high phase input port, and the input ports port1 to port4 are arranged on the housing 1 in a circular array, so microwaves in the form of standing waves 61 as indicated by thin arrows will travel from the input port1 to the input port Port4 generates a cycle, forming the phase matching wave 62 shown by the thick arrow. Since the phase matching wave 62 moves on the path of the cycle, the node position of the phase matching wave 62 changes with time.

请参阅图7,其为本发明图4的相位匹配波于图3的腔室5中循环的第二电场分布图,图7中的相位匹配波的四个实施例为每隔45度呈现相位匹配波在腔室5中的循环,其中,相位匹配波在第一实施例时,相位匹配波位于输入端口port1至port4的相位分别为0、90、180及270度,相位匹配波在第二实施例时,相位匹配波位于输入端口port1至port4的相位分别为45、135、225及315度,相位匹配波在第三实施例时,相位匹配波位于输入端口port1至port4的相位分别为90、180、270及0度,相位匹配波在第四实施例时,相位匹配波位于输入端口port1至port4的相位分别为135、225、315及45度。Please refer to FIG. 7 , which is a second electric field distribution diagram of the phase-matched wave of FIG. 4 circulating in the chamber 5 of FIG. 3 of the present invention. The four embodiments of the phase-matched wave in FIG. 7 show phases every 45 degrees. Circulation of the matched wave in the chamber 5, wherein, when the phase matched wave is in the first embodiment, the phase of the phase matched wave at the input ports port1 to port4 is 0, 90, 180 and 270 degrees respectively, and the phase matched wave is in the second In the embodiment, the phases of the phase-matched waves at the input ports port1 to port4 are 45, 135, 225, and 315 degrees, respectively. In the third embodiment, the phases of the phase-matched waves at the input ports port1 to port4 are 90 degrees respectively. , 180, 270 and 0 degrees, the phase matching wave In the fourth embodiment, the phases of the phase matching waves at the input ports port1 to port4 are 135, 225, 315 and 45 degrees respectively.

从图7可知相位匹配波在腔室5中循环的四个实施例的第二电场分布图与图4的第一电场分布图产生的能量大致上呈现互补。It can be seen from FIG. 7 that the second electric field profiles of the four embodiments in which the phase-matched waves circulate in the chamber 5 are substantially complementary to the energy generated by the first electric field profile of FIG. 4 .

在一实施例中,相位匹配波若欲在腔室5内有更均匀的分布,也就是说其电场分布具有最佳几何对称的特性,其输入端口的微波的相位差的设计方式为:沿腔室方位角度方向一圈有N个输入端口,若相邻输入端口之间相位差相同,则相位差约为(360/N)度或其倍数,若相位差不同,则输入端口两两相位差相加的角度和约为360度或其倍数。In one embodiment, if the phase-matched wave wants to have a more uniform distribution in the chamber 5, that is to say, its electric field distribution has the characteristics of optimal geometric symmetry, the design method of the phase difference of the microwave at the input port is as follows: There are N input ports in a circle in the azimuth and angle direction of the chamber. If the phase difference between adjacent input ports is the same, the phase difference is about (360/N) degrees or its multiple. If the phase difference is different, the input ports are in phase The sum of the angles to which the differences are added is approximately 360 degrees or a multiple thereof.

以在图3的腔室5中设计更均匀分布的相位匹配波为例,由于图3的沿腔室5方位角度方向一圈有4个输入端口,每个输入端口之间的相位差的较佳设计为360度/4=90度,4个输入端口的微波的相位分别为0、90、180及270度,由此可知,形成图4的该相位匹配波的输入端口port1至port4之间的相位差即为较佳的设计。Taking the design of more evenly distributed phase-matching waves in the chamber 5 in Fig. 3 as an example, since there are 4 input ports in a circle along the azimuth angle of the chamber 5 in Fig. 3, the phase difference between each input port is relatively small. The optimal design is 360 degrees/4=90 degrees, and the phases of the microwaves of the four input ports are 0, 90, 180 and 270 degrees respectively. It can be seen from this that the input ports port1 to port4 of the phase matching wave in FIG. 4 are formed. The phase difference is the better design.

在一实施例中,相位匹配波不限于由图3所示的上下左右彼此对称的环形阵列的输入端口port1至port4所提供,也可由非对称的环形阵列的输入端口所提供,例如于图3所示的壳体1上形成沿腔室5绕一圈有6个非对称的环形阵列的输入端口,其每个输入端口之间的相位差的较佳设计为360度/6=60度,6个输入端口的微波的相位分别为0、60、120、180、240及300度。In one embodiment, the phase-matched waves are not limited to be provided by the input ports port1 to port4 of the annular array shown in FIG. The housing 1 shown is formed with 6 asymmetric annular arrays of input ports around the chamber 5, and the phase difference between each input port is preferably designed to be 360 degrees/6=60 degrees, The phases of the microwaves of the six input ports are 0, 60, 120, 180, 240 and 300 degrees, respectively.

请参阅图8,其于图3所示的腔室5中放置一圆形薄片的被加热物6。Please refer to FIG. 8 , a circular sheet of heated object 6 is placed in the chamber 5 shown in FIG. 3 .

请同时配合参阅图9,其为本发明于图8的被加热物6进行三种加热方式的温度分布图,其中,圆形粗线代表被加热物6,且该温度分布图依不同灰度色区分不同的温度,其中,该灰度色由浅至深代表温度由低至高。Please also refer to FIG. 9 , which is a temperature distribution diagram of the object to be heated 6 in three heating modes of the present invention in FIG. 8 , wherein the thick circular line represents the object to be heated 6 , and the temperature distribution diagram is in accordance with different grayscales The color distinguishes different temperatures, where the gray color from light to dark represents the temperature from low to high.

第一种加热方式:进行步骤S3,令各相控功率模块2将各输入端口port1至port4输入至腔室5中的微波调整为同相位且功率100W,并持续300秒输入至腔室5对被加热物6进行加热。由图9中可知被加热物6被第一种加热方式持续300秒加热后的温度分布高低相差74.4度。The first heating method: go to step S3, so that each phase-controlled power module 2 adjusts the microwaves input from the input ports port1 to port4 into the chamber 5 to be in the same phase and the power is 100W, and input them to the chamber 5 for 300 seconds. The object to be heated 6 is heated. It can be seen from FIG. 9 that the temperature distribution of the object 6 heated by the first heating method for 300 seconds differs by 74.4 degrees.

第二种加热方式:进行步骤S4,令各相控功率模块2将各输入端口port1至port4输入至腔室5中的微波调整为相位匹配波且功率100W,并持续300秒输入至腔室5对被加热物6进行加热。由图9中可知被加热物6被第二种加热方式持续300秒加热后的温度分布高低相差47.4度。The second heating method: go to step S4, make each phase-controlled power module 2 adjust the microwave input into the chamber 5 from the input ports port1 to port4 into a phase-matched wave with a power of 100W, and input it into the chamber 5 for 300 seconds The object to be heated 6 is heated. It can be seen from FIG. 9 that the temperature distribution of the object to be heated 6 after being heated by the second heating method for 300 seconds differs by 47.4 degrees.

第三种加热方式:进行第一种加热方式持续150秒及第二种加热方式持续150秒,由图9中可知采用第一种加热方式及第二种加热方式的配合应用对被加热物6加热后的温度分布高低相差只34.4度,由此可知,步骤S3及步骤S4的配合应用可改善单独进行步骤S3或步骤S4后的被加热物6的温度分布差异甚大的问题,换言之,在固定的加热时间内采用步骤S3及步骤S4的配合应用可大大降低被加热物6的温差。The third heating method: carry out the first heating method for 150 seconds and the second heating method for 150 seconds. It can be seen from FIG. 9 that the combination of the first heating method and the second heating method is used to heat the object 6 The difference in temperature distribution after heating is only 34.4 degrees. It can be seen that the coordinated application of step S3 and step S4 can improve the problem that the temperature distribution of the heated object 6 is very different after step S3 or step S4 is performed alone. The combined application of step S3 and step S4 can greatly reduce the temperature difference of the object to be heated 6 within the heating time.

请参阅图10,其为在矩形的壳体1上设有多个输入端口的第二实施例的透视图,其中,在矩形壳体1的六个面上形成彼此对称的三维阵列的输入端口port1至port6,且于腔室5中放置一球形的被加热物6。Please refer to FIG. 10 , which is a perspective view of a second embodiment in which a plurality of input ports are provided on a rectangular casing 1 , wherein input ports in a three-dimensional array symmetrical to each other are formed on the six faces of the rectangular casing 1 port1 to port6, and a spherical heated object 6 is placed in the chamber 5 .

请同时配合参阅图11,其为本发明于图10的被加热物6进行三组方式加热的温度分布图,其中,圆形粗线代表被加热物6,且该温度分布图依不同灰度色区分不同的温度,其中,灰度色由浅至深代表温度由低至高。Please also refer to FIG. 11 , which is a temperature distribution diagram of the object to be heated 6 in FIG. 10 in three groups of heating according to the present invention, wherein the thick circle represents the object to be heated 6 , and the temperature distribution diagram is in accordance with different grayscales The color distinguishes different temperatures, where the gray color from light to dark represents the temperature from low to high.

第一组加热方式:进行步骤S3,其中,令各相控功率模块2对各输入端口port1至port6输入至腔室5中的微波调整为同相位且功率100W,并持续300秒输入至腔室5对被加热物6进行加热。由图11中可知被加热物6被第一组加热方式持续加热300秒后的温度分布高低相差46.4度。The first group of heating methods: go to step S3, wherein, each phase-controlled power module 2 adjusts the microwaves input into the chamber 5 by the input ports port1 to port6 to be in the same phase and with a power of 100W, and input them into the chamber for 300 seconds 5 Heating the object 6 to be heated. It can be seen from FIG. 11 that the temperature distribution of the object 6 after being continuously heated by the first group of heating methods for 300 seconds differs by 46.4 degrees.

第二组加热方式:进行步骤S4,其中,先将输入端口中的至少一组对称的输入端口port5及port6接至匹配端(在一实施例中,匹配端可为阻抗,但不以此为限),以令至少一组对称的输入端口port5及port6不提供微波输入至腔室5,接着令各相控功率模块2将相邻的输入端口port1至port4输入至腔室的微波调整为彼此互为相反相位且功率100W,并持续300秒输入至腔室5对被加热物6进行加热。由图11中可知被加热物6被第二组加热方式持续加热300秒后的温度分布高低相差25.3度。The second group of heating methods: go to step S4, wherein at least one set of symmetrical input ports port5 and port6 in the input ports are first connected to the matching terminal (in one embodiment, the matching terminal may be an impedance, but it is not limit), so that at least one set of symmetrical input ports port5 and port6 do not provide microwave input to the chamber 5, and then each phase-controlled power module 2 adjusts the microwaves input to the chamber by the adjacent input ports port1 to port4 to be equal to each other The phases are opposite to each other and the power is 100W, and is input into the chamber 5 for 300 seconds to heat the object to be heated 6 . It can be seen from FIG. 11 that the temperature distribution of the object to be heated 6 is continuously heated by the second group of heating methods for 300 seconds, with a difference of 25.3 degrees.

第三组加热方式:进行第一组加热方式持续100秒及第二组加热方式持续200秒,由图11可知采用第一组加热方式及第二组加热方式的配合应用对被加热物6加热后的温度分布高低相差仅17.2度,由此可知,步骤S3及步骤S4的配合应用可改善单独进行步骤S3或步骤S4后的被加热物6的温度分布差异甚大的问题,换言之,在固定的加热时间内采用步骤S3及步骤S4的配合应用可大大降低被加热物6的温差。The third group of heating methods: the first group of heating methods lasts for 100 seconds and the second group of heating methods lasts for 200 seconds. It can be seen from Figure 11 that the combination of the first group of heating methods and the second group of heating methods is used to heat the object to be heated 6 The difference in the temperature distribution after step S3 is only 17.2 degrees. It can be seen that the coordinated application of step S3 and step S4 can improve the problem that the temperature distribution of the heated object 6 is very different after step S3 or step S4 is performed alone. The coordinated application of step S3 and step S4 during the heating time can greatly reduce the temperature difference of the object to be heated 6 .

请参阅图12,其为在矩形的壳体1上设有多个输入端口(port)的第三实施例的透视图,其中,在壳体1上形成左右彼此对称的线阵列的输入端口port1至port2,且于腔室5的中心底部附有一载台7及于载台7上的被加热物6。Please refer to FIG. 12 , which is a perspective view of a third embodiment in which a plurality of input ports (ports) are provided on a rectangular housing 1 , wherein the input ports port1 of the left and right line arrays symmetrical to each other are formed on the housing 1 to port 2 , and a carrier 7 and the object to be heated 6 on the carrier 7 are attached to the bottom of the center of the chamber 5 .

请同时配合参阅图13,其为本发明的图12的输入端口port1至port2在调整微波的相位后,腔室的剖视电场分布图,图13所示的电场分布图依不同灰度色区分不同的电场强度,该灰度色由浅至深代表电场强度由低至高,而虚线圆圈代表位于被加热物6表面的强电场区,由图13可知位于被加热物6表面的强电场区的位置会随着输入端口port1至port2的微波的相位的调整而产生位移,因此,通过微波相位于不同阶段的调整,可使得腔室5内的微波于不同阶段的电场产生彼此呈现互补式电场分布,以使被加热物6从该不同阶段的互补式电场分布中得到更加均匀的受热,换言之,本发明的分布式微波相位控制方法也可于步骤S3中改变各输入端口的微波的相位,只要步骤S4的腔室5的电场分布图与步骤S3的腔室5的电场分布图呈现互补形式即为本发明的精神所在,再者,本发明的分布式微波相位控制方法所适用的多个输入端口于壳体1上的摆设方式也不限于上述几种,例如多个输入端口于壳体1上的摆设方式也可为非对称式的三维阵列或环形阵列,但不以此为限。Please also refer to FIG. 13 , which is a cross-sectional electric field distribution diagram of the chamber of the input ports port1 to port2 in FIG. 12 after adjusting the phase of the microwave of the present invention. The electric field distribution diagram shown in FIG. 13 is distinguished by different grayscale colors. Different electric field intensities, the gray color from light to dark represents the electric field intensity from low to high, and the dotted circle represents the strong electric field area located on the surface of the object to be heated 6, from FIG. The displacement will be generated with the adjustment of the phases of the microwaves input to ports port1 to port2. Therefore, by adjusting the phases of the microwaves at different stages, the electric fields of the microwaves in the chamber 5 at different stages can be generated to present complementary electric field distributions. In order to make the heated object 6 get more uniform heating from the complementary electric field distribution at different stages, in other words, the distributed microwave phase control method of the present invention can also change the phase of the microwaves of each input port in step S3, as long as the step It is the spirit of the present invention that the electric field distribution diagram of the chamber 5 in S4 and the electric field distribution diagram of the chamber 5 in step S3 are in a complementary form. Furthermore, the multiple input ports to which the distributed microwave phase control method of the present invention is applicable The arrangement on the casing 1 is not limited to the above-mentioned ones. For example, the arrangement of the plurality of input ports on the casing 1 can also be an asymmetrical three-dimensional array or an annular array, but it is not limited thereto.

请参阅图14,其为本发明应用于圆柱形的壳体1的示意图,其中,圆柱形的壳体1上可分层设置多个输入端口的阵列,△Φ1至△Φ4表示为单层的各输入端口所提供的微波的相位,△θ1与△θ2代表各层之间的微波的相位差,而由输入端口提供的微波所产生的电场分布8中,S所指的圈代表强电场区而W所指的圈代表弱电场区,通过本发明的分布式微波相位控制方法即可对该强电场区与该弱电场区的分布进行切换,进而使该电场分布中的被加热物能够更加均匀受热。Please refer to FIG. 14, which is a schematic diagram of the present invention applied to a cylindrical casing 1, wherein a plurality of input port arrays can be layered on the cylindrical casing 1, and ΔΦ1 to ΔΦ4 are represented as single-layered The phase of the microwave provided by each input port, Δθ1 and Δθ2 represent the phase difference of the microwave between the layers, and in the electric field distribution 8 generated by the microwave provided by the input port, the circle indicated by S represents the strong electric field area The circle indicated by W represents the weak electric field area, and the distribution of the strong electric field area and the weak electric field area can be switched by the distributed microwave phase control method of the present invention, so that the heated object in the electric field distribution can be more Heat evenly.

由上述可得知,本发明利用在壳体上形成分布式的输入端口阵列,再通过相控功率模块提供不同相位的微波由输入端口输入腔室,可主动式的控制腔室内的微波于不同阶段的电场强弱分布的转换,并使得腔室内的微波于不同阶段的电场彼此呈现互补式电场分布,以使腔室内的被加热物从不同阶段的互补式电场分布中得到更加均匀的受热,进而改善传统加热器加热不均匀的现象。As can be seen from the above, the present invention utilizes a distributed input port array formed on the casing, and then provides microwaves of different phases through the phase control power module and is input into the chamber through the input port, so that the microwave in the chamber can be actively controlled to be different in different phases. The transformation of the electric field intensity distribution in different stages makes the microwave in the chamber present complementary electric field distributions in different stages of the electric field, so that the heated object in the chamber can be heated more uniformly from the complementary electric field distribution in different stages. In turn, the phenomenon of uneven heating of traditional heaters is improved.

上述实施例仅用以例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟习此项技术的人士均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的保护范围,应如权利要求书所列。The above embodiments are only used to illustrate the principles and effects of the present invention, but not to limit the present invention. Anyone skilled in the art can make modifications to the above embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be listed in the claims.

Claims (13)

1.一种分布式微波相位控制方法,其特征在于,包括:1. a distributed microwave phase control method, is characterized in that, comprises: 提供内部具有腔室的壳体,且于该壳体上形成有多个连通该腔室的输入端口;providing a housing with a chamber inside, and a plurality of input ports communicating with the chamber are formed on the housing; 令多个相控功率模块通过该输入端口将微波输入至该腔室中,以使该腔室中的微波呈现第一电场分布;以及causing a plurality of phased power modules to input microwaves into the chamber through the input port, so that the microwaves in the chamber exhibit a first electric field distribution; and 令各该相控功率模块调整各该输入端口输入至该腔室的微波的相位,使得该腔室中的微波因相位的变化产生与该第一电场分布呈现互补的第二电场分布;causing each of the phase-controlled power modules to adjust the phase of the microwaves input to the chamber by each of the input ports, so that the microwaves in the chamber generate a second electric field distribution that is complementary to the first electric field distribution due to the phase change; 其中,与该第一电场分布呈现互补的第二电场分布是指该第二电场分布图与该第一电场分布图相叠时,该第一电场分布图的中间区域中的弱电场区重叠于该第二电场分布图的中间区域中的强电场区,或该第二电场分布图的中间区域中的弱电场区重叠于该第一电场分布图的中间区域中的强电场区。The second electric field distribution that is complementary to the first electric field distribution means that when the second electric field distribution diagram and the first electric field distribution diagram overlap, the weak electric field region in the middle region of the first electric field distribution diagram overlaps with The strong electric field region in the middle region of the second electric field distribution map, or the weak electric field region in the middle region of the second electric field distribution map overlaps the strong electric field region in the middle region of the first electric field distribution map. 2.根据权利要求1所述的分布式微波相位控制方法,其特征在于,该壳体上形成有对称式阵列的多个输入端口。2 . The distributed microwave phase control method according to claim 1 , wherein a plurality of input ports of a symmetrical array are formed on the housing. 3 . 3.根据权利要求2所述的分布式微波相位控制方法,其特征在于,各该相控功率模块提供同相位的微波至各该输入端口,使各该输入端口将该同相位的微波输入至该腔室中,进而使该腔室中的微波呈现该第一电场分布。3 . The distributed microwave phase control method according to claim 2 , wherein each of the phase-controlled power modules provides microwaves of the same phase to each of the input ports, so that each of the input ports inputs the microwaves of the same phase to the input ports. 4 . In the chamber, the microwaves in the chamber exhibit the first electric field distribution. 4.根据权利要求3所述的分布式微波相位控制方法,其特征在于,各该相控功率模块将相对称的该输入端口输入至该腔室的微波调整成互为相反相位,使得该腔室中的微波因相位的变化产生与该第一电场分布呈现互补的第二电场分布,其中,该第一电场分布及该第二电场分布呈驻波形式,且该驻波的节点位置不随时间改变。4 . The distributed microwave phase control method according to claim 3 , wherein each of the phase-controlled power modules adjusts the microwaves input from the symmetrical input ports to the cavity to have opposite phases, so that the cavity is in opposite phase. 5 . The microwave in the chamber produces a second electric field distribution that is complementary to the first electric field distribution due to the phase change, wherein the first electric field distribution and the second electric field distribution are in the form of standing waves, and the node positions of the standing waves do not vary with time Change. 5.根据权利要求3所述的分布式微波相位控制方法,其特征在于,各该相控功率模块将相邻的该输入端口输入至该腔室的微波调整成互为相反相位,使得该腔室中的微波因相位的变化产生与该第一电场分布呈现互补的第二电场分布,其中,该第一电场分布及该第二电场分布呈驻波形式,且该驻波的节点位置不随时间改变。5 . The distributed microwave phase control method according to claim 3 , wherein each of the phase-controlled power modules adjusts the microwaves input into the cavity from the adjacent input ports to have opposite phases, so that the cavity is in opposite phase. 6 . The microwave in the chamber generates a second electric field distribution that is complementary to the first electric field distribution due to the phase change, wherein the first electric field distribution and the second electric field distribution are in the form of standing waves, and the node positions of the standing waves do not vary with time. Change. 6.根据权利要求5所述的分布式微波相位控制方法,其特征在于,在产生该第一电场分布后,将该输入端口中的至少一组对称的输入端口接至匹配端,以令该至少一组对称的输入端口不提供微波输入至该腔室,接着令各该相控功率模块将相邻的该输入端口输入至该腔室的微波调整为彼此互为相反相位。6 . The distributed microwave phase control method according to claim 5 , wherein after the first electric field distribution is generated, at least one group of symmetrical input ports in the input ports is connected to a matching terminal, so that the At least one set of symmetrical input ports does not provide microwave input to the chamber, and then each of the phased power modules adjusts the microwaves input to the chamber by the adjacent input ports to be in opposite phases to each other. 7.根据权利要求3所述的分布式微波相位控制方法,其特征在于,各该相控功率模块将沿该壳体的各方位角度的方向上的各该输入端口的微波,依序调整为具有相位差,使得该腔室中的微波因相位的变化产生该第二电场分布。7 . The distributed microwave phase control method according to claim 3 , wherein each of the phase-controlled power modules sequentially adjusts the microwaves of the input ports along the directions of each azimuthal angle of the casing to be With a phase difference, the microwave in the chamber generates the second electric field distribution due to the phase change. 8.根据权利要求7所述的分布式微波相位控制方法,其特征在于,该相位差的设计方式为沿该壳体的各方位角度的方向上有N个该输入端口,则该相位差为(360/N)度或其倍数。8 . The distributed microwave phase control method according to claim 7 , wherein the phase difference is designed such that there are N input ports along the directions of each azimuth angle of the housing, then the phase difference is: 9 . (360/N) degrees or multiples thereof. 9.根据权利要求7所述的分布式微波相位控制方法,其特征在于,该第一电场分布为驻波形式,而该第二电场分布为相位匹配波形式,其中,该驻波的节点位置不随时间改变,而该相位匹配波的节点位置随时间改变。9 . The distributed microwave phase control method according to claim 7 , wherein the first electric field distribution is in the form of a standing wave, and the second electric field distribution is in the form of a phase matching wave, wherein the node positions of the standing wave does not change with time, while the node position of the phase-matched wave changes with time. 10.根据权利要求1所述的分布式微波相位控制方法,其特征在于,该壳体及腔室为矩形、圆柱形或多边形。10 . The distributed microwave phase control method according to claim 1 , wherein the casing and the chamber are rectangular, cylindrical or polygonal. 11 . 11.根据权利要求2所述的分布式微波相位控制方法,其特征在于,该对称式阵列为线阵列、三维阵列或环形阵列。11 . The distributed microwave phase control method according to claim 2 , wherein the symmetric array is a line array, a three-dimensional array or a ring array. 12 . 12.根据权利要求1所述的分布式微波相位控制方法,其特征在于,该壳体上形成有非对称式阵列的多个输入端口。12 . The distributed microwave phase control method according to claim 1 , wherein a plurality of input ports of an asymmetric array are formed on the casing. 13 . 13.根据权利要求12所述的分布式微波相位控制方法,其特征在于,该非对称式阵列为三维阵列或环形阵列。13 . The distributed microwave phase control method according to claim 12 , wherein the asymmetric array is a three-dimensional array or a ring array. 14 .
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56132793U (en) * 1980-03-10 1981-10-08
JPH11176570A (en) * 1997-12-02 1999-07-02 Samsung Electron Co Ltd Microwave oven
JP2008269794A (en) * 2007-04-16 2008-11-06 Matsushita Electric Ind Co Ltd Microwave processor
US20120090782A1 (en) * 2010-10-19 2012-04-19 Tokyo Electron Limited Microwave plasma source and plasma processing apparatus
CN102511198A (en) * 2009-12-09 2012-06-20 松下电器产业株式会社 High frequency heating device, and high frequency heating method
CN104272866A (en) * 2012-03-09 2015-01-07 松下电器产业株式会社 microwave heating device
CN106686792A (en) * 2015-11-05 2017-05-17 财团法人工业技术研究院 Multi-modal microwave heating device
CN106920729A (en) * 2015-12-28 2017-07-04 中微半导体设备(上海)有限公司 The plasma processing apparatus and method of a kind of uniform etching substrate
WO2018037801A1 (en) * 2016-08-22 2018-03-01 パナソニックIpマネジメント株式会社 High-frequency heating device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56132793U (en) * 1980-03-10 1981-10-08
JPH11176570A (en) * 1997-12-02 1999-07-02 Samsung Electron Co Ltd Microwave oven
JP2008269794A (en) * 2007-04-16 2008-11-06 Matsushita Electric Ind Co Ltd Microwave processor
CN102511198A (en) * 2009-12-09 2012-06-20 松下电器产业株式会社 High frequency heating device, and high frequency heating method
US20120090782A1 (en) * 2010-10-19 2012-04-19 Tokyo Electron Limited Microwave plasma source and plasma processing apparatus
CN104272866A (en) * 2012-03-09 2015-01-07 松下电器产业株式会社 microwave heating device
CN106686792A (en) * 2015-11-05 2017-05-17 财团法人工业技术研究院 Multi-modal microwave heating device
CN106920729A (en) * 2015-12-28 2017-07-04 中微半导体设备(上海)有限公司 The plasma processing apparatus and method of a kind of uniform etching substrate
WO2018037801A1 (en) * 2016-08-22 2018-03-01 パナソニックIpマネジメント株式会社 High-frequency heating device

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