CN111366290A - Hemispherical universal sensitive piezoelectric impact sensor - Google Patents
Hemispherical universal sensitive piezoelectric impact sensor Download PDFInfo
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- CN111366290A CN111366290A CN202010227383.1A CN202010227383A CN111366290A CN 111366290 A CN111366290 A CN 111366290A CN 202010227383 A CN202010227383 A CN 202010227383A CN 111366290 A CN111366290 A CN 111366290A
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- ceramic thick
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- 239000000919 ceramic Substances 0.000 claims abstract description 56
- 238000007639 printing Methods 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 238000003825 pressing Methods 0.000 claims description 15
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 12
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000035939 shock Effects 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000001133 acceleration Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005316 response function Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
The invention relates to a hemispherical universal sensitive piezoelectric impact sensor. The hemispherical universal sensitive piezoelectric impact sensor prints the hemispherical ceramic thick film to the hemispherical surface of the hemispherical base through an electric jet micro-nano printing technology; the hemisphere ceramic thick film and the hemisphere base are of an integrated structure. The hemispherical universal sensitive piezoelectric impact sensor provided by the invention can simplify the structure and the signal processing flow of the sensitive piezoelectric impact sensor and improve the universality of the hemispherical universal sensitive piezoelectric impact sensor.
Description
Technical Field
The invention relates to the field of universal sensitive piezoelectric impact sensors, in particular to a hemispherical universal sensitive piezoelectric impact sensor.
Background
The universal sensitive piezoelectric impact sensor has wide application in the industrial field and the military field. The general universal sensitive mechanism mostly adopts a collision closed switch, and the structure has the main problems of low action reliability and long action time during large-angle impact. A universal sensitive piezoelectric impact sensor is adopted as a target detection device, and a signal processing circuit is matched, so that the quick and reliable response function of a control system can be well realized.
The traditional piezoelectric sensor adopts a mode that plane block-shaped ceramic or round ceramic is designed into a single-axis sensitive structure or a three-axis orthogonal combination, the traditional three-axis sensor needs a structure which is installed along three orthogonal directions of X/Y/Z, correspondingly needs three crystal groups, three mass blocks, three pre-tightening nuts and the like, leads need to be welded in each direction, and the internal structure is very complex; secondly, the conventional three-axis sensor needs to output three signals, and absolute value summation is carried out on the three signals, so that the sensor can have the omni-directionality; therefore, the traditional piezoelectric sensor is relatively complex in structure and signal processing, poor in universality, and not beneficial to further miniaturization and installation and use of the sensor.
Disclosure of Invention
The invention aims to provide a hemispherical universal sensitive piezoelectric impact sensor, which solves the problems of complex structure and signal processing and poor universality of the traditional piezoelectric sensor.
In order to achieve the purpose, the invention provides the following scheme:
a hemispherical gimbal sensitive piezoelectric shock sensor, comprising: the device comprises a hemisphere base, a hemisphere ceramic thick film, an inertia ball, a pre-tightening pressing block, a pre-tightening nut, an insulating film and a shell;
the hemispherical base, the hemispherical ceramic thick film, the inertia ball, the pre-tightening press block and the pre-tightening nut are arranged in the shell;
printing the hemispherical ceramic thick film on the hemispherical surface of the hemispherical base by an electric jet micro-nano printing technology; the hemispherical ceramic thick film and the hemispherical base are of an integrated structure;
the inertia ball is matched with the hemispherical ceramic thick film; the pre-tightening nut and the pre-tightening pressing block apply initial pre-tightening force to the inertia ball, so that the inertia ball is in contact with the hemispherical ceramic thick film;
the insulating film is arranged between the pre-tightening pressing block and the pre-tightening nut; the welding wire on the pre-tightening pressing block is used as the anode of the hemispherical universal sensitive piezoelectric impact sensor, and the shell is used as the cathode of the hemispherical universal sensitive piezoelectric impact sensor; the insulating film is used for electrically isolating the pre-tightening pressing block and the pre-tightening nut, so that the positive electrode and the negative electrode are insulated.
Optionally, the material of the hemispherical ceramic thick film is lead zirconate titanate.
Optionally, the hemispherical ceramic thick film is prepared by the following steps: controlling the three-dimensional running track of the hemispherical base, and preparing a spherical lead zirconate titanate thick film with uniform thickness on the spherical surface of the hemispherical base by utilizing an electric jet micro-nano printing technology; and sintering and curing the spherical lead zirconate titanate thick film, sputtering a layer of electrode on the upper surface of the cured lead zirconate titanate thick film, and polarizing to form the hemispherical ceramic thick film with the piezoelectric effect.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the invention provides a hemispherical universal sensitive piezoelectric impact sensor, which is characterized in that a hemispherical piezoelectric ceramic thick film is prepared on a spherical surface by utilizing an electric jet micro-nano printing technology, so that the assembly of a sensitive element is avoided, the processing precision of spherical ceramic is difficult to guarantee because the ceramic is a brittle material, and the ceramic is not uniformly stressed and is easy to crack when the spherical ceramic is assembled with a spherical base due to poor matching, so that a product is scrapped;
meanwhile, the space universal sensitive function of the sensor is realized by utilizing the spherical symmetrical structure, the universal sensitive function of the piezoelectric impact sensor is skillfully realized, the application requirement of sensitivity in any direction is not only realized, but also only one piezoelectric element (namely a piezoelectric ceramic thick film) is used, the structure is much simpler, and the sensor has the characteristics of small volume, high integration level and good universality; meanwhile, only one path of output signals is provided, and the signal processing is very simple.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a cross-sectional view of a hemispherical gimbal sensitive piezoelectric impact sensor provided in accordance with the present invention;
FIG. 2 is a schematic view of a hemispherical ceramic thick film additive manufacturing process provided by the present invention;
fig. 3 is a working schematic diagram of a hemispherical gimbal sensitive piezoelectric impact sensor provided by the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a hemispherical universal sensitive piezoelectric impact sensor, which can simplify the structure and the signal processing flow of the sensitive piezoelectric impact sensor and improve the universality of the hemispherical universal sensitive piezoelectric impact sensor.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
FIG. 1 is a hemispherical universal pressure-sensitive sensor provided by the present inventionA cross-sectional view of an electrical shock sensor, as shown in fig. 1, a hemispherical gimbal sensitive piezoelectric shock sensor, comprising: the device comprises a hemisphere base, a hemisphere ceramic thick film, an inertia ball, a pre-tightening pressing block, a pre-tightening nut, an insulating film and a shell; the hemispherical base, the hemispherical ceramic thick film, the inertia ball, the pre-tightening press block and the pre-tightening nut are arranged in the shell; printing the hemispherical ceramic thick film on the hemispherical surface of the hemispherical base by an electric jet micro-nano printing technology; the hemispherical ceramic thick film and the hemispherical base are of an integrated structure; the inertia ball is matched with the hemispherical ceramic thick film; the pre-tightening nut and the pre-tightening pressing block apply initial pre-tightening force to the inertia ball, so that the inertia ball is in contact with the hemispherical ceramic thick film; the insulating film is arranged between the pre-tightening pressing block and the pre-tightening nut; the welding wire on the pre-tightening pressing block is used as the anode of the hemispherical universal sensitive piezoelectric impact sensor, and the shell is used as the cathode of the hemispherical universal sensitive piezoelectric impact sensor; the insulating film is used for electrically isolating the pre-tightening pressing block and the pre-tightening nut, so that the positive electrode and the negative electrode are insulated; wherein the material of the hemispherical ceramic thick film is lead zirconate titanate ([ Pb (Zr) ]xTi1-x)O3，PZT)。
As shown in fig. 2, the hemispherical piezoelectric ceramic thick film is manufactured by an additive manufacturing technology based on electric jet micro-nano printing, a spherical PZT thick film with uniform thickness is prepared on the spherical surface of the hemispherical base by controlling the three-dimensional moving track of the hemispherical base, and then sintering and curing are performed; and sputtering a layer of electrode on the upper surface of the PZT thick film after the curing is finished, and finally forming the spherical piezoelectric thick film with the piezoelectric effect after polarization.
The working principle of the hemispherical universal sensitive piezoelectric impact sensor is as follows: when the sensor senses the impact acceleration, according to newton's second law, the inertia ball will generate an inertia force of F ═ ma on the piezoelectric thick film, so that the stress sensed by the surface of the spherical piezoelectric thick film changes, as shown in fig. 3, according to the positive piezoelectric effect, the surface of the spherical piezoelectric thick film will generate electric charges proportional to the inertia force, and the signals output electric signals through the positive and negative electrodes of the sensor.
When the impact acceleration direction changes, the direction of the inertial force generated by the inertial ball on the piezoelectric thick film also changes, and at the moment, the ceramic is in a spherical structure, so that the most spherical surface of the hemispherical piezoelectric ceramic thick film still senses the action of the inertial force along the radius direction of the ball, and the impact acceleration signal can still be reliably converted into an electric signal.
The invention can fully utilize the spherical space symmetry to realize that the sensor has better omnidirectionality, so that the sensor can reliably respond to acting force in all directions.
Because the traditional single-axis piezoelectric sensor only has one sensitive axis and can only sense the impact acceleration in the axial direction in the sensitive period theoretically, when the impact acceleration and the sensitive axis form an included angle theta, the sensitivity of the traditional single-axis piezoelectric sensor can be attenuated according to a cos theta trigonometric function, the larger the angle is, the larger the attenuation of an output signal is, and the theta can not respond at all when the angle is 90 degrees; according to the invention, by utilizing the characteristics of the spherical symmetrical structures of the inertia ball and the piezoelectric ceramic thick film, when the sensor senses the impact acceleration in any direction, the inertia force sensed by the inertia ball can cause stress change on the ceramic surface, so that an electric signal is output, the problem that the traditional single-shaft piezoelectric sensor cannot reliably work when being subjected to large-angle impact loading is well solved, and the universal sensitivity of the piezoelectric sensor is greatly improved.
In the conventional piezoelectric sensor, piezoelectric ceramics are generally fixed with a sensor matrix in a mechanical assembly mode, and the problems of complex assembly process and low rigidity of a contact surface are solved.
Because ideal contact is difficult to ensure between contact surfaces during assembly, and microscopic gaps exist, the piezoelectric ceramic thick film is sprayed and printed on the substrate, so that the interface of the piezoelectric thick film and the metal substrate is completely contacted, the contact effect is better than that of the traditional method of assembling two pieces together, the contact rigidity of the contact surface is improved, the dynamic performance of the sensor is better, and the structure is simpler.
Because the processing precision of the traditional spherical ceramic is difficult to ensure, the ceramic is stressed unevenly due to poor matching when the traditional spherical ceramic is assembled with a spherical substrate, and the ceramic is a brittle material and is easy to crack, so that the product is scrapped; the method has the advantages that the additive manufacturing technology is adopted to print the spherical piezoelectric thick film, the ceramic is printed on the metal substrate, the problem that the spherical ceramic is processed independently, the assembly link does not exist, the assembly failure does not exist, the yield is improved, the problems of low yield and poor precision of the precision spherical piezoelectric ceramic manufactured based on the traditional machining mode are well solved, and the method has great reference value for the design of the piezoelectric impact sensor.
According to the invention, the piezoelectric ceramic thick film is printed on the spherical metal substrate by adopting an electric jet micro-nano printing technology, so that the integrated design and processing of the sensitive material and the metal substrate are realized, the ceramic assembly link adopted by the traditional design method is avoided, and the technical problem that the curved surface piezoelectric ceramic is difficult to manufacture and assemble is solved.
The invention adopts the spherical piezoelectric ceramic thick film as a sensitive element, the inertia ball is matched and assembled with the piezoelectric ceramic, the piezoelectric ceramic is polarized along the radial direction, the force along the radial direction can be converted into an electric signal, and the space pair formation of the spherical structure is utilized to realize that the piezoelectric impact sensor has good universal sensitive characteristic.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (3)
1. A hemispherical gimbal sensitive piezoelectric shock sensor, comprising: the device comprises a hemisphere base, a hemisphere ceramic thick film, an inertia ball, a pre-tightening pressing block, a pre-tightening nut, an insulating film and a shell;
the hemispherical base, the hemispherical ceramic thick film, the inertia ball, the pre-tightening press block and the pre-tightening nut are arranged in the shell;
printing the hemispherical ceramic thick film on the hemispherical surface of the hemispherical base by an electric jet micro-nano printing technology; the hemispherical ceramic thick film and the hemispherical base are of an integrated structure;
the inertia ball is matched with the hemispherical ceramic thick film; the pre-tightening nut and the pre-tightening pressing block apply initial pre-tightening force to the inertia ball, so that the inertia ball is in contact with the hemispherical ceramic thick film;
the insulating film is arranged between the pre-tightening pressing block and the pre-tightening nut; the welding wire on the pre-tightening pressing block is used as the anode of the hemispherical universal sensitive piezoelectric impact sensor, and the shell is used as the cathode of the hemispherical universal sensitive piezoelectric impact sensor; the insulating film is used for electrically isolating the pre-tightening pressing block and the pre-tightening nut, so that the positive electrode and the negative electrode are insulated.
2. The hemispherical gimbal sensitive piezoelectric shock sensor of claim 1, wherein the material of the hemispherical ceramic thick film is lead zirconate titanate.
3. The hemispherical gimbal sensitive piezoelectric shock sensor of claim 2, wherein the hemispherical ceramic thick film is prepared by:
controlling the three-dimensional running track of the hemispherical base, and preparing a spherical lead zirconate titanate thick film with uniform thickness on the spherical surface of the hemispherical base by utilizing an electric jet micro-nano printing technology; and sintering and curing the spherical lead zirconate titanate thick film, sputtering a layer of electrode on the upper surface of the cured lead zirconate titanate thick film, and polarizing to form the hemispherical ceramic thick film with the piezoelectric effect.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010227383.1A CN111366290A (en) | 2020-03-27 | 2020-03-27 | Hemispherical universal sensitive piezoelectric impact sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010227383.1A CN111366290A (en) | 2020-03-27 | 2020-03-27 | Hemispherical universal sensitive piezoelectric impact sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112857668A (en) * | 2021-03-16 | 2021-05-28 | 华中科技大学 | Piezoelectric ceramic driver fixing device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104921A (en) * | 1975-12-13 | 1978-08-08 | Messerschmitt-Boelkow-Blohm Gmbh | Piezoelectric acceleration transducer |
| US5178013A (en) * | 1989-10-06 | 1993-01-12 | Takata Corporation | Impact sensor |
| JPH09229961A (en) * | 1996-02-26 | 1997-09-05 | Kansai Gas Meter Co Ltd | Acceleration sensor |
| JP2009042050A (en) * | 2007-08-08 | 2009-02-26 | Nichicon Corp | Acceleration/angular velocity sensor |
| CN102445300A (en) * | 2011-10-09 | 2012-05-09 | 北京化工大学 | Dynamic grounding pressure testing device |
| CN103604949A (en) * | 2013-11-20 | 2014-02-26 | 中国工程物理研究院电子工程研究所 | Annular piezoelectric type micro acceleration sensor |
| CN203981316U (en) * | 2014-07-21 | 2014-12-03 | 潍坊聚德电子有限公司 | Tire balancing equipment precision pressure sensor |
| CN204269262U (en) * | 2014-11-27 | 2015-04-15 | 重庆交通大学 | Multidirectional concrete dynamic stress monitoring sensor |
| CN206420594U (en) * | 2016-12-29 | 2017-08-18 | 南昌欧菲光科技有限公司 | Pressure sensor and electronic installation |
| CN107167277A (en) * | 2017-07-26 | 2017-09-15 | 中国工程物理研究院总体工程研究所 | The universal triggering impact fuze sensing device of single piezoelectric patches piezoelectric energy-conversion |
-
2020
- 2020-03-27 CN CN202010227383.1A patent/CN111366290A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104921A (en) * | 1975-12-13 | 1978-08-08 | Messerschmitt-Boelkow-Blohm Gmbh | Piezoelectric acceleration transducer |
| US5178013A (en) * | 1989-10-06 | 1993-01-12 | Takata Corporation | Impact sensor |
| JPH09229961A (en) * | 1996-02-26 | 1997-09-05 | Kansai Gas Meter Co Ltd | Acceleration sensor |
| JP2009042050A (en) * | 2007-08-08 | 2009-02-26 | Nichicon Corp | Acceleration/angular velocity sensor |
| CN102445300A (en) * | 2011-10-09 | 2012-05-09 | 北京化工大学 | Dynamic grounding pressure testing device |
| CN103604949A (en) * | 2013-11-20 | 2014-02-26 | 中国工程物理研究院电子工程研究所 | Annular piezoelectric type micro acceleration sensor |
| CN203981316U (en) * | 2014-07-21 | 2014-12-03 | 潍坊聚德电子有限公司 | Tire balancing equipment precision pressure sensor |
| CN204269262U (en) * | 2014-11-27 | 2015-04-15 | 重庆交通大学 | Multidirectional concrete dynamic stress monitoring sensor |
| CN206420594U (en) * | 2016-12-29 | 2017-08-18 | 南昌欧菲光科技有限公司 | Pressure sensor and electronic installation |
| CN107167277A (en) * | 2017-07-26 | 2017-09-15 | 中国工程物理研究院总体工程研究所 | The universal triggering impact fuze sensing device of single piezoelectric patches piezoelectric energy-conversion |
Non-Patent Citations (1)
| Title |
|---|
| 王大志、吕景明 等: ""PZT厚膜的电射流沉积研究"", 《传感器与微系统》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112857668A (en) * | 2021-03-16 | 2021-05-28 | 华中科技大学 | Piezoelectric ceramic driver fixing device |
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