CN111347061B - Process method for processing silicon ring - Google Patents
Process method for processing silicon ring Download PDFInfo
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- CN111347061B CN111347061B CN201811585961.8A CN201811585961A CN111347061B CN 111347061 B CN111347061 B CN 111347061B CN 201811585961 A CN201811585961 A CN 201811585961A CN 111347061 B CN111347061 B CN 111347061B
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- cutter
- silicon ring
- outer diameter
- grinding
- ring
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000005498 polishing Methods 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 11
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 238000003754 machining Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 231100000956 nontoxicity Toxicity 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B1/00—Methods for turning or working essentially requiring the use of turning-machines; Use of auxiliary equipment in connection with such methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/06—Profile cutting tools, i.e. forming-tools
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a process method for processing a silicon ring, which comprises the following steps: (1) fixing the silicon ring on a chuck, fixing a common cutter with a small mesh number on a cutter rest, starting a machine, rotating the chuck and the cutter, and removing the outer diameter of the silicon ring by 0.5 mm; (2) changing a common cutter with larger mesh number to remove 0.3mm of the outer diameter of the silicon ring; (3) fixing a special cutter on a cutter frame, wherein the special cutter is provided with a cylindrical part and an inclined part, the cylindrical part of the cutter is used for grinding the outer diameter of the silicon ring, the inclined part of the cutter is used for chamfering the outer diameter of the silicon ring, and the cylindrical part of the cutter is used for grinding the outer diameter of the silicon ring to a target diameter; then chamfering the left side and the right side of the outer diameter of the silicon ring by using the inclined surface part of the cutter; (4) and (4) carrying out double-sided grinding on the processed silicon ring, and making an inner diameter, a positioning hole and a clamping groove in a processing center. The process method can manufacture the silicon ring with high quality of the outer diameter chamfer angle, and the silicon ring has good outer diameter chamfer angle consistency, no edge breakage, no pollution and no toxicity.
Description
Technical Field
The invention relates to a process method for processing a silicon ring, in particular to a method for grinding and chamfering the outer diameter of the silicon ring by using a lathe, belonging to the technical field of semiconductor materials.
Background
The silicon ring is an auxiliary material in the manufacturing process of the integrated circuit, is mainly used in an ion implantation process and is used for supporting and fixing a silicon wafer. The existing silicon ring processing technology comprises the steps of external diameter grinding, external diameter chamfering, double-side grinding, A-side internal diameter and positioning hole making of a processing center, B-side clamping groove making of the processing center, corrosion, clamping groove grinding, clamping groove polishing, double-side polishing and cleaning; the outer diameter grinding adopts grinding wheel grinding for a lathe, and the outer diameter chamfering adopts manual chamfering of a chamfering basin. The consistency of the chamfer angle of the outer diameter of the ring piece processed by the method is poor, and a plurality of small broken edges exist after the chamfer angle, so that the service life of the ring piece is influenced. Therefore, there is a need to provide a new method for processing silicon ring.
Disclosure of Invention
The invention aims to provide a process method for processing a silicon ring, in particular to a process for grinding and chamfering the outer diameter of the silicon ring by using a lathe, which improves the chamfering quality of the outer diameter of the silicon ring and ensures that the dimensional precision of the silicon ring is controllable.
In order to achieve the purpose, the invention adopts the following technical scheme:
a process method for processing a silicon ring comprises the following steps:
(1) fixing the silicon ring on a chuck, fixing a common cutter with a small mesh number on a cutter rest, starting a machine, rotating the chuck and the cutter, and removing the outer diameter of the silicon ring by 0.5 mm;
(2) fixing a common cutter with a larger mesh number on a cutter rest, starting a machine, rotating the chuck and the cutter, and removing the outer diameter of the silicon ring by 0.3 mm;
(3) fixing a special cutter on a cutter frame, wherein the special cutter is provided with a cylindrical part and an inclined part, the cylindrical part of the cutter is used for grinding the outer diameter of the silicon ring, the inclined part of the cutter is used for chamfering the outer diameter of the silicon ring, and the mesh number of the cutter is larger than that of the common cutter in the step (2); starting the machine to rotate the chuck and the tool; grinding the outer diameter of the silicon ring to a target diameter by using a cylindrical part of a cutter; then chamfering the left side of the outer diameter of the silicon ring by using the inclined surface part of the cutter, and chamfering the right side of the outer diameter of the silicon ring by using the inclined surface part of the cutter;
(4) grinding the processed silicon ring on two sides, making an inner diameter and a positioning hole on one side by a processing center, and making a clamping groove on the other side by the processing center;
(5) and sequentially carrying out corrosion, clamping groove grinding, clamping groove polishing, double-side polishing and cleaning on the machined silicon ring.
Preferably, in the steps (1) - (3), the chuck rotation speed is between 10-100 rpm, and the tool rotation speed is between 1000-.
Preferably, in the step (1), the common cutter mesh number is between 10 and 200 meshes.
Preferably, in the step (2), the number of the tools is between 200 and 400 meshes.
Preferably, in the step (3), the number of the tools is between 400 and 800.
In the steps (1) to (3), the ranges of the chuck rotation speed and the tool rotation speed need to be selected by considering the removal rate and the surface quality of the silicon ring comprehensively, the lower-mesh tools are mainly used for obtaining the higher removal rate in the steps (1) and (2), and the higher-mesh tools are mainly used for obtaining the higher surface quality of the silicon ring in the step (3).
The invention has the advantages that:
the process method can manufacture the silicon ring with high quality of the outer diameter chamfer angle, and the silicon ring has good outer diameter chamfer angle consistency, no edge breakage, no pollution and no toxicity.
Drawings
Fig. 1 is a side view of a special tool used in the present invention.
Fig. 2 is a front view of a special tool used in the present invention.
Fig. 3 is a side view of a conventional cutter.
Fig. 4 is a front view of a general cutter.
Detailed Description
The present invention is further illustrated by the following figures and examples, which are not meant to limit the scope of the invention.
Fig. 1 and 2 show a schematic structure of a special tool used in the present invention. The tool used in the present invention has a cylindrical portion 1 for grinding the outer diameter of the silicon ring and a bevel portion 2 for chamfering the outer diameter of the silicon ring.
As shown in fig. 3 and 4, the structure of a common cutter is schematically shown, and the cutter only has a part 3 for grinding the outer diameter of a silicon ring.
Example 1
Mounting an 8-inch silicon ring with the outer diameter of 260.98mm on a chuck, fixing the silicon ring on a tool rest by using a 120-mesh common tool (see figures 3 and 4), starting a lathe, and grinding the outer diameter of the ring to 260.48mm at the chuck rotating speed of 40 rpm and the tool rotating speed of 2000 rpm; fixing a 310-mesh common cutter (shown in figures 3 and 4) on a cutter frame, starting a lathe, and grinding the outer diameter of the ring to 260.18mm at the rotating speed of 40 rpm of a chuck and 2000 rpm of the cutter; then, a 650-mesh cutter (shown in figures 1 and 2) which is customized by the invention is arranged on a cutter rest, a lathe is started, the rotating speed of a chuck is 40 r/min, the rotating speed of the cutter is 2000 r/min, the outer diameter of the silicon ring is ground to the target diameter of 259.98mm by using the cylindrical part of the cutter, then the left side of the outer diameter of the silicon ring is chamfered by using the inclined surface of the cutter, and then the right side of the outer diameter of the silicon ring is chamfered by using the inclined surface; and then, carrying out double-sided grinding on the silicon ring, after the machining is finished, carrying out corrosion cleaning on the machined silicon ring, and carrying out clamping groove grinding and clamping groove polishing.
Mounting another 8-inch silicon ring with the outer diameter of 260.96mm on a chuck, fixing the silicon ring on a tool rest by using a 120-mesh common tool (see figures 3 and 4), starting a lathe, and grinding the outer diameter of the ring to 260.48mm at the chuck rotating speed of 40 rpm and the tool rotating speed of 2000 rpm; fixing a 310-mesh common cutter (shown in figures 3 and 4) on a cutter frame, starting a lathe, and grinding the outer diameter of the ring to 260.18mm at the rotating speed of 40 rpm of a chuck and 2000 rpm of the cutter; then a 650-mesh common cutter (see fig. 3 and 4) is replaced and arranged on a cutter rest, a lathe is started, the rotating speed of a chuck is 40 r/min, the rotating speed of the cutter is 2000 r/min, the outer diameter of a ring is ground to 259.98mm, then the silicon ring is taken down, the outer diameter of the silicon ring is chamfered by a chamfering basin, then the silicon ring is subjected to double-side grinding, after the machining is finished, the machined silicon ring is subjected to corrosion cleaning, clamping groove grinding and clamping groove polishing.
And (3) polishing and cleaning the two silicon rings by using the same process on a double-sided polishing machine and a cleaning machine, visually inspecting, and finally packaging.
Visual inspection results show that the first step 3 of grinding is a silicon ring with chamfer angles by grinding the outer diameter of the customized cutter, the chamfer angles of the outer diameter are not broken edges, and two sides of the outer diameter are provided with uniform chamfer angles of 45 degrees. The step 3 of grinding of the second wafer is to grind the outer diameter of a common cutter and use a chamfered silicon ring, wherein 5 small broken edges are arranged at the chamfered position of the outer diameter, the chamfer angle on one side of the outer diameter A surface is normal, and the chamfer angle on one side of the outer diameter B surface is small. Therefore, the outer diameter chamfering quality of the silicon ring subjected to the outer diameter grinding chamfering by using the customized cutter is obviously better.
Example 2
Mounting a 12-inch silicon ring with the outer diameter of 360.96mm on a chuck, fixing the ring on a tool rest by using a 120-mesh common tool (see figures 3 and 4), starting a lathe, and grinding the outer diameter of the ring to 360.50mm at the chuck rotating speed of 40 rpm and the tool rotating speed of 2000 rpm; fixing a 310-mesh common cutter (shown in figures 3 and 4) on a cutter frame, starting a lathe, and grinding the outer diameter of the ring to 360.20mm at the rotating speed of 40 rpm of a chuck and 2000 rpm of the cutter; then a customized 650-mesh cutter (shown in figures 1 and 2) is arranged on a cutter rest, a lathe is started, the rotating speed of a chuck is 40 r/min, the rotating speed of the cutter is 2000 r/min, the outer diameter of the silicon ring is ground to a target diameter of 360.00mm by using the cylindrical part of the cutter, then the left side of the outer diameter of the silicon ring is chamfered by using the inclined surface of the cutter, and then the right side of the outer diameter of the silicon ring is chamfered by using the inclined surface of the cutter; and then, carrying out double-sided grinding on the silicon ring, after the machining is finished, carrying out corrosion cleaning on the machined silicon ring, and carrying out clamping groove grinding and clamping groove polishing.
Mounting another 12-inch silicon ring with the outer diameter of 361.03mm on a chuck, fixing the ring on a tool rest by using a 120-mesh common tool (see figures 3 and 4), starting a lathe, and grinding the outer diameter of the ring to 360.50mm at the chuck rotating speed of 40 rpm and the tool rotating speed of 2000 rpm; fixing a 310-mesh common cutter (shown in figures 3 and 4) on a cutter frame, starting a lathe, and grinding the outer diameter of the ring to 360.20mm at the rotating speed of 40 rpm of a chuck and 2000 rpm of the cutter; then a 650-mesh common cutter (shown in figures 3 and 4) is replaced and arranged on a cutter rest, a lathe is started, the rotating speed of a chuck is 40 rpm, the rotating speed of the cutter is 2000 rpm, the outer diameter of a ring is ground to 360.00mm, then the silicon ring is taken down, the outer diameter of the silicon ring is chamfered by a chamfering basin, then the silicon ring is subjected to double-side grinding, after the machining is finished, the machined silicon ring is subjected to corrosion cleaning, clamping groove grinding and clamping groove polishing.
And (3) polishing and cleaning the two silicon rings by using the same process on a double-sided polishing machine and a cleaning machine, visually inspecting, and finally packaging.
Visual inspection results show that the first silicon ring is a silicon ring which is subjected to outer diameter grinding and chamfering by using the customized cutter, the outer diameter chamfer is not provided with a broken edge, and two sides of the outer diameter are provided with uniform 45-degree chamfers; the second piece is a silicon ring which is ground by the outer diameter of a common cutter and chamfered by a chamfer basin, the chamfer of the outer diameter of the second piece is provided with 3 small broken edges, and the chamfers on two sides of the outer diameter are larger. Therefore, the outer diameter chamfering quality of the silicon ring subjected to the outer diameter grinding chamfering by using the customized cutter is obviously better.
Claims (5)
1. A process method for processing a silicon ring is characterized by comprising the following steps:
(1) fixing the silicon ring on a chuck, fixing a common cutter with a small mesh number on a cutter rest, starting a machine, rotating the chuck and the cutter, and removing the outer diameter of the silicon ring by 0.5 mm;
(2) fixing a common cutter with a larger mesh number on a cutter rest, starting a machine, rotating the chuck and the cutter, and removing the outer diameter of the silicon ring by 0.3 mm;
(3) fixing a special cutter on a cutter frame, wherein the special cutter is provided with a cylindrical part and an inclined part, the cylindrical part of the cutter is used for grinding the outer diameter of the silicon ring, the inclined part of the cutter is used for chamfering the outer diameter of the silicon ring, and the mesh number of the cutter is larger than that of the common cutter in the step (2); starting the machine to rotate the chuck and the tool; grinding the outer diameter of the silicon ring to a target diameter by using a cylindrical part of a cutter; then chamfering the left side of the outer diameter of the silicon ring by using the inclined surface part of the cutter, and chamfering the right side of the outer diameter of the silicon ring by using the inclined surface part of the cutter;
(4) grinding the processed silicon ring on two sides, making an inner diameter and a positioning hole on one side by a processing center, and making a clamping groove on the other side by the processing center;
(5) and sequentially carrying out corrosion, clamping groove grinding, clamping groove polishing, double-side polishing and cleaning on the machined silicon ring.
2. The process for machining a silicon ring as claimed in claim 1, wherein in the steps (1) - (3), the rotation speed of the chuck is 10-100 rpm, and the rotation speed of the tool is 1000-5000 rpm.
3. The process for machining a silicon ring as claimed in claim 1, wherein in the step (1), the common tool has a mesh size of 10-200 meshes.
4. The process of claim 1, wherein in the step (2), the number of the tools is 200-400 meshes.
5. The process of claim 1, wherein in the step (3), the number of the tools is between 400-800 meshes.
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CN201811585961.8A CN111347061B (en) | 2018-12-24 | 2018-12-24 | Process method for processing silicon ring |
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CN201811585961.8A CN111347061B (en) | 2018-12-24 | 2018-12-24 | Process method for processing silicon ring |
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CN111347061B true CN111347061B (en) | 2021-03-30 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3834083A (en) * | 1970-12-21 | 1974-09-10 | Sony Corp | Machine for grinding an edge contour on a semiconductor wafer |
CN1718333A (en) * | 2004-07-08 | 2006-01-11 | 株式会社迪斯科 | Cutting insert and method for manufacturing cutting insert |
CN102019581A (en) * | 2009-09-18 | 2011-04-20 | 不二越机械工业株式会社 | Wafer grinding equipment and wafer manufacturing method |
CN103586751A (en) * | 2012-08-13 | 2014-02-19 | 日商·大都电子股份有限公司 | Method for chamfering wafer, apparatus for chamfering wafer, and jig for adjusting angle of grindstone |
CN104303270A (en) * | 2012-04-24 | 2015-01-21 | 株式会社东京精密 | Dicing blade |
CN107210210A (en) * | 2014-12-04 | 2017-09-26 | 胜高股份有限公司 | Adsorb the chamfer grinding method of chuck, chamfer grinding device and Silicon Wafer |
-
2018
- 2018-12-24 CN CN201811585961.8A patent/CN111347061B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3834083A (en) * | 1970-12-21 | 1974-09-10 | Sony Corp | Machine for grinding an edge contour on a semiconductor wafer |
CN1718333A (en) * | 2004-07-08 | 2006-01-11 | 株式会社迪斯科 | Cutting insert and method for manufacturing cutting insert |
CN102019581A (en) * | 2009-09-18 | 2011-04-20 | 不二越机械工业株式会社 | Wafer grinding equipment and wafer manufacturing method |
CN104303270A (en) * | 2012-04-24 | 2015-01-21 | 株式会社东京精密 | Dicing blade |
CN103586751A (en) * | 2012-08-13 | 2014-02-19 | 日商·大都电子股份有限公司 | Method for chamfering wafer, apparatus for chamfering wafer, and jig for adjusting angle of grindstone |
CN107210210A (en) * | 2014-12-04 | 2017-09-26 | 胜高股份有限公司 | Adsorb the chamfer grinding method of chuck, chamfer grinding device and Silicon Wafer |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |