CN111338149B - Nitrogen-containing electrochromic device and preparation method thereof - Google Patents
Nitrogen-containing electrochromic device and preparation method thereof Download PDFInfo
- Publication number
- CN111338149B CN111338149B CN202010215936.1A CN202010215936A CN111338149B CN 111338149 B CN111338149 B CN 111338149B CN 202010215936 A CN202010215936 A CN 202010215936A CN 111338149 B CN111338149 B CN 111338149B
- Authority
- CN
- China
- Prior art keywords
- nitrogen
- layer
- electrochromic
- oxynitride
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000008859 change Effects 0.000 claims abstract description 19
- 150000002500 ions Chemical class 0.000 claims description 69
- 239000007789 gas Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 238000004040 coloring Methods 0.000 claims description 13
- 238000005546 reactive sputtering Methods 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- 125000004429 atom Chemical group 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 11
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 11
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 8
- 239000013077 target material Substances 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- -1 nitrogen ions Chemical class 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 claims description 5
- 239000002200 LIPON - lithium phosphorus oxynitride Substances 0.000 claims description 4
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 claims description 4
- ZVLDJSZFKQJMKD-UHFFFAOYSA-N [Li].[Si] Chemical compound [Li].[Si] ZVLDJSZFKQJMKD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- CKFRRHLHAJZIIN-UHFFFAOYSA-N cobalt lithium Chemical compound [Li].[Co] CKFRRHLHAJZIIN-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- IBXOPEGTOZQGQO-UHFFFAOYSA-N [Li].[Nb] Chemical compound [Li].[Nb] IBXOPEGTOZQGQO-UHFFFAOYSA-N 0.000 claims description 3
- AWJDQCINSGRBDJ-UHFFFAOYSA-N [Li].[Ta] Chemical compound [Li].[Ta] AWJDQCINSGRBDJ-UHFFFAOYSA-N 0.000 claims description 3
- IGUHATROZYFXKR-UHFFFAOYSA-N [W].[Ir] Chemical compound [W].[Ir] IGUHATROZYFXKR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- PPTSBERGOGHCHC-UHFFFAOYSA-N boron lithium Chemical compound [Li].[B] PPTSBERGOGHCHC-UHFFFAOYSA-N 0.000 claims description 3
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- BJBUTJPAZHELKY-UHFFFAOYSA-N manganese tungsten Chemical compound [Mn].[W] BJBUTJPAZHELKY-UHFFFAOYSA-N 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 13
- 238000005562 fading Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 148
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910001416 lithium ion Inorganic materials 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 230000037427 ion transport Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229960001730 nitrous oxide Drugs 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910013733 LiCo Inorganic materials 0.000 description 1
- 229910012506 LiSi Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- ZUSQJEHVTIBRNR-UHFFFAOYSA-N aluminum;lithium;oxygen(2-) Chemical compound [Li+].[O-2].[O-2].[Al+3] ZUSQJEHVTIBRNR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- WPRVMQRVBHPSSI-UHFFFAOYSA-N lithium oxygen(2-) silicon(4+) Chemical compound [Si+4].[O-2].[Li+] WPRVMQRVBHPSSI-UHFFFAOYSA-N 0.000 description 1
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1524—Transition metal compounds
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1525—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material characterised by a particular ion transporting layer, e.g. electrolyte
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrochemistry (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
The invention discloses a nitrogen-containing electrochromic device, which relates to the field of electrochromic and comprises a substrate, a first conductive layer, a first electrochromic layer, an ion conductive layer, a second electrochromic layer and a second conductive layer; the first conductive layer is stacked on the substrate, the first electrochromic layer is stacked on the first conductive layer, the ion conductive layer is stacked on the first electrochromic layer, the second electrochromic layer is stacked on the ion conductive layer, and the second conductive layer is stacked on the second electrochromic layer; the electrochromic device disclosed by the invention has high stability and high ion transmission rate, can meet the requirement of about 5 ten thousand times of fading cycle, and has a service life of about 20 years. In addition, the color fading uniformity of the device is enhanced by controlling the nitrogen content of different areas, and the color change range can reach 1% -69%.
Description
Technical Field
The invention relates to the field of electrochromic, in particular to a nitrogen-containing electrochromic device and a manufacturing method thereof.
Background
Electrochromic refers to a phenomenon in which optical properties (reflectivity, transmittance, absorptivity, etc.) change stably and reversibly under the action of an applied electric field. Electrochromic technology has been developed for forty years, and electrochromic devices (Electrochromic Device, ECD) have wide application prospects in the fields of intelligent windows, displays, spacecraft temperature control modulation, automobile dizzy-free rearview mirrors, weapon equipment stealth and the like due to the characteristics of continuous adjustability of transmitted light intensity, low energy loss, open-circuit memory function and the like. The ECD-based glass is used as a brand new intelligent window, the intensity of incident sunlight can be regulated according to comfort requirements, the energy consumption is effectively reduced, and a remarkable energy-saving effect is shown. With the continuous improvement of human requirements on consumption products, ECD shows great market prospect and application value in the fields of automobiles, household appliances, aerospace, rail transit, green buildings and the like, and electrochromic products have attracted more and more widespread attention and importance at home and abroad, so that the ECD is a new generation of high-efficiency building energy-saving products following heat absorption glass, heat reflection coated glass and low-radiation glass.
However, in the existing electrochromic device, the electrochromic layer is usually tungsten oxide or other metal oxide, which is considered in terms of crystallinity of the tungsten oxide or other metal oxide and stability of the electrochromic layer, the higher the stability is, the longer the service life of the electrochromic device is, which generally requires the service life of the electrochromic device to be 20 years, and about 5 ten thousand fading cycles. However, the metal oxide has opposite tendencies of crystallinity, stability and the like and ion transmission speed, so if the stability of the electrochromic device under certain conditions is to be maintained, the ion transmission speed is inevitably reduced, resulting in the problem of slow discoloration of the electrochromic device.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention is to provide an electrochromic device with high stability and high ion transmission speed.
In order to achieve the above object, the present invention provides a nitrogen-containing electrochromic device including a substrate, a first conductive layer, a first electrochromic layer, an ion conductive layer, a second electrochromic layer, and a second conductive layer;
the first conductive layer is stacked on the substrate, the first electrochromic layer is stacked on the first conductive layer, the ion conductive layer is stacked on the first electrochromic layer, the second electrochromic layer is stacked on the ion conductive layer, and the second conductive layer is stacked on the second electrochromic layer;
wherein the first electrochromic layer and the second electrochromic layer comprise nitrogen.
Further, the mole number of nitrogen atoms in the first electrochromic layer is 0.05 to 20% of the mole number of total atoms.
Further, the mole number of nitrogen atoms in the second electrochromic layer accounts for 0.05 to 15% of the mole number of total atoms.
Further, a cathodic coloring material is included in the first electrochromic layer, and an anodic coloring material is included in the second electrochromic layer.
Further, the cathodic coloring material is selected from the group consisting of: tungsten oxynitride, molybdenum oxynitride, niobium oxynitride, titanium oxynitride, tantalum oxynitride; the anodic coloring material is selected from the group consisting of: nickel oxynitride, iridium oxynitride, manganese oxynitride, cobalt oxynitride, tungsten nickel oxynitride, tungsten iridium oxynitride, tungsten manganese oxynitride, and tungsten cobalt oxynitride.
The invention also discloses a nitrogen-containing electrochromic device, which comprises a substrate, a first conductive layer, a first electrochromic layer, an ion conductive layer, a second electrochromic layer and a second conductive layer;
the first conductive layer is stacked on the substrate, the first electrochromic layer is stacked on the first conductive layer, the ion conductive layer is stacked on the first electrochromic layer, the second electrochromic layer is stacked on the ion conductive layer, and the second conductive layer is stacked on the second electrochromic layer;
wherein the ion conducting layer comprises nitrogen.
Further, the mole number of nitrogen atoms in the ion conducting layer is 0.05% to 30% of the mole number of the total atoms.
Further, the thickness of the ion conducting layer is 3 nm to 300 nm.
Further, the nitrogen-containing electrochromic device includes a plurality of electrochromic regions, the rate of change of which is regulated by the nitrogen content of the ion conducting layer.
Further, the ion conducting layer is a material selected from the group consisting of: lithium silicon oxynitride, lithium tantalum oxynitride, lithium niobium oxynitride, lithium cobalt oxynitride, lithium aluminum oxynitride, lithium phosphorus oxynitride, and lithium boron oxynitride.
The invention also discloses a preparation method of the nitrogen-containing electrochromic device, which comprises the following steps:
isolating the target from the outside air, wherein the target comprises a first target and a second target;
performing reactive sputtering on the first target material by using inert gas doped oxygen and nitrogen-containing gas, and forming a first electrochromic layer on the first conductive layer;
forming an ion conducting layer on the first electrochromic layer;
performing reactive sputtering on the second target material by using the inert gas doped oxygen and the nitrogen-containing gas to form a second electrochromic layer on the ion conducting layer;
a second conductive layer is formed on the second electrochromic layer.
Further, the nitrogen-containing gas comprises a group consisting of: nitrogen, ammonia, nitric oxide, nitrogen dioxide, nitrous oxide, nitrogen fluoride.
Further, the first target comprises the following materials or their oxides: tungsten, molybdenum, niobium, titanium, tantalum.
Further, the second target comprises the following materials or their oxides: nickel, iridium, cobalt, manganese, tungsten.
Further, the target material further comprises a third target material; the ion conducting layer is formed on the first electrochromic layer by reactive sputtering the third target with inert gas doped oxygen and nitrogen containing gas.
Further, the nitrogen-containing gas enters the reaction chamber through a plurality of separate gas paths as the ion conducting layer is formed.
The electrochromic device disclosed by the invention has the advantages of high stability and high ion transmission rate, can meet the requirement of about 5 ten thousand times of fading cycle, and has the service life of about 20 years. In addition, the color fading uniformity of the device is enhanced by controlling the nitrogen content of different areas, and the color change range can reach 1% -69%.
The conception, specific structure, and technical effects of the present invention will be further described with reference to the accompanying drawings to fully understand the objects, features, and effects of the present invention.
Drawings
Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Reference numerals illustrate: 100-substrate; 105-a first conductive layer; 110-a first electrochromic layer; 115-ion conducting layer; 120-a second electrochromic layer; 125-a second conductive layer.
Detailed Description
The following description of the preferred embodiments of the present invention refers to the accompanying drawings, which make the technical contents thereof more clear and easy to understand. The present invention may be embodied in many different forms of embodiments and the scope of the present invention is not limited to only the embodiments described herein.
In the drawings, like structural elements are referred to by like reference numerals and components having similar structure or function are referred to by like reference numerals. The dimensions and thickness of each component shown in the drawings are arbitrarily shown, and the present invention is not limited to the dimensions and thickness of each component. The thickness of the components is exaggerated in some places in the drawings for clarity of illustration.
For purposes of brevity, the term "nitrogen content" is defined herein as the percentage of moles of nitrogen atoms to moles of atoms of the entire functional layer of the electrochromic device.
As shown in fig. 1, on a substrate 100, a first conductive layer 105, a first electrochromic layer 110, an ion conductive layer 115, a second electrochromic layer 120, and a second conductive layer 125 are sequentially deposited, respectively. The first conductive layer 105 and the second conductive layer 125 are conventional conductive layers, and the material includes one or more of Indium Tin Oxide (ITO), aluminum doped zinc oxide (AZO), boron doped zinc oxide (BZO), fluorine doped tin oxide (FTO). First electrochromic layer 110, ion conducting layer 115, second electrochromic layer 120, in turn, overlie first conductive layer 105 and second conductive layer 125.
The first electrochromic layer 110 is a polycrystalline metal oxynitride deposited film, typically 150 to 650nm thick, and the material used specifically includes tungsten oxynitride (WO x N y ) Molybdenum oxynitride (MoO) x N y ) Niobium oxynitride (NbO) x N y ) Titanium oxynitride (TiO) x N y ) Tantalum oxynitride (TaO) x N y ) Depending on the nitrogen content, the parameters x and y will also vary accordingly. The number of moles of nitrogen atoms in the first electrochromic layer 110 is generally 0.05% to 20% of the number of moles of the total atoms, and may be 0.5% to 5%, and may be 0.5% to 10%. Generally, the nitrogen content exceeds 20%, the color of the deposited coating is deepened, which is caused by the color of the metal oxynitride, and the deepening of the coating color influences the light transmittance of the electrochromic glass in a fading state, so that the color changing range of a finished device is reduced.
After replacing the metal oxide used in the conventional electrochromic layer with metal oxynitride, according to the difference of nitrogen content, nitrogen ions replace oxygen ions in the original metal oxide, and tungsten is taken as an example, original W-O ionic bonds are partially replaced by W-N ionic bonds, so that the asymmetry of crystal lattices is caused, the acting force balance among the original ions is destroyed, adjacent atoms deviate from the balance position, and the crystal distortion is caused. After the crystal is distorted, interactions around the ion transport channel are reduced, thereby increasing the ion transport rate of the electrochromic layer. The nitrogen element is taken as a relatively stable element, the stability of the metal compound is not affected by the introduction of the nitrogen element, the good stability is still maintained, the requirement of about 5 ten thousand times of fading cycle can be met, and the service life can reach about 20 years. The ion transmission speed can be improved by about 2 to 10 times compared with the original metal oxide transmission speed.
Ion conducting layer 115 is deposited over first electrochromic layer 110 for removing lithium ions from either first electrochromic layer 110 or second electrochromic layer 125 when first conductive layer 105 and second conductive layer 125 are energizedLayer 120 is transferred to another opposing electrochromic layer. Likewise, upon reversal of the current, lithium ions flow in a reverse direction, causing the electrochromic device to cycle between coloring and bleaching. In this embodiment, the ion conductive layer 115 may use lithium silicon oxynitride (LiSi z O x N y ) Tantalum lithium oxynitride (LiTa) z O x N y ) Lithium niobium oxynitride (LiNb) z O x N y ) Cobalt lithium oxynitride (LiCo) z O x N y ) Lithium aluminum oxynitride (LiAl) z O x N y ) Lithium phosphorus oxynitride (LiP) z O x N y ) Boron lithium oxynitride (LiB) z O x N y ) One or more of the following. The parameters of x, y and z are correspondingly changed according to the nitrogen content. In the film layer of the ion conductive layer 115, the number of moles of nitrogen atoms is generally 0.05 to 30% of the number of moles of the entire atoms, and may be 0.5 to 5%, or may be 10 to 20%. Since the oxynitride has both ion conductivity and electron insulation properties, it can perfectly satisfy that the electrochromic device blocks electron movement when the first conductive layer 105 and the second conductive layer 125 are energized while transferring ions between the first electrochromic layer 110 and the second electrochromic layer 120, preventing a short circuit. Thus, the thickness of ion conducting layer 115 of the present invention can be made thinner, up to 3 nm, while ion conducting layer 115 still has the characteristics of electronic insulation and ion transport, and can be 10 nm to 50nm, and can be 100 nm to 300 nm, preferably 5 nm to 200 nm, relative to the thickness of ion conducting layers in existing electrochromic devices, thereby reducing the thickness of the electrochromic device as a whole, and thus, when the electrochromic device is applied to practical products, such as electrochromic glass, electrochromic display screen, these practical products will be lighter and thinner. In the prior art, the effect of electronic insulation is usually achieved by thickening the ion conducting layer to 600 nm or more.
In addition, the ion conducting layer 115 used in the present invention can increase the ion conductivity of materials such as silicon lithium oxynitride, aluminum lithium oxynitride, cobalt lithium oxynitride, etc. by about one order of magnitude compared to the prior art materials such as silicon lithium oxide, aluminum lithium oxide, cobalt lithium oxide, etc. By adjusting the nitrogen content of ion conducting layer 115, the ion transport rate of the device can be adjusted, and further the color change rate of the electrochromic device can be adjusted accordingly, thereby meeting the requirements of different users on the color change rate, and especially realizing uniform color change effect at different color change rates. For example, in the case of a higher nitrogen content in the film, the color change rate of the electrochromic device is proportionally reduced, while in the case of a lower nitrogen content, the color change rate of the electrochromic device is increased. In addition, in the deposition process of the conventional electrochromic device, the local area color change speed of the electrochromic device is not the same due to defects generated in the conventional deposition process, so that the color change uniformity of the electrochromic device is influenced, and the local area color change speed of the electrochromic device can be respectively regulated and controlled by regulating and controlling the nitrogen content of the local area of the film layer, so that the local area color change speeds of the electrochromic device tend to be consistent, and the obtained electrochromic device has more uniform color change effect. In another embodiment of the present invention, the ion transmission speed of different areas on the electrochromic device can be regulated so that the color change speed is uneven, and the ion transmission speed of certain areas on the electrochromic device can be 0 under extreme conditions, so as to achieve the purpose of forming a pattern or a pattern on the electrochromic device.
A second electrochromic layer 120 is deposited on ion conducting layer 115 to a film thickness of 150 to 650nm, the material selected from nickel oxynitride (NiO) x N y ) Iridium oxynitride (IrO) x N y ) Manganese oxynitride (MnO) x N y ) Cobalt oxynitride (CoO) x N y ) Tungsten nickel oxynitride (WNi) z O x N y ) Tungsten iridium oxynitride (WIr) z O x N y ) Tungsten manganese oxynitride (WMn) z O x N y ) Tungsten cobalt oxynitride (WCo) z O x N y ) The mole number of nitrogen atoms in the film layer accounts for about 0.05-15% of the mole number of the whole atoms.
Optionally, the electrochromic materials in the first electrochromic layer 110 and the second electrochromic layer 120 are a cathodic coloring material and an anodic coloring material, respectively. For example, the first electrochromic layer 110 may employ a cathodically coloring material, such as tungsten oxynitride; the second electrochromic layer 120 may employ an anodic coloring material, such as nickel oxynitride. That is, after lithium ions leave from the second electrochromic layer 120, the second electrochromic layer also enters a colored state. Thus, the first electrochromic layer 110 and the second electrochromic layer 120 combine and together reduce the light transmittance transmitted through the overall electrochromic device.
Since the metal composition inside the second electrochromic layer 120 is different from that of the first electrochromic layer 110, the second electrochromic layer 120 is generally of a microcrystalline or amorphous structure, and nitrogen element is further introduced into the conventional second electrochromic layer 120, so that the iridium oxide material is converted into nickel oxynitride, iridium oxynitride or cobalt oxynitride material from the conventional nickel oxide, thereby improving the stability of the device in the fading process due to the higher binding energy of nitride relative to oxide.
Further, if tungsten is introduced into the aforementioned second electrochromic layer 120, the ion transport performance of the electrochromic device can be further enhanced, and the discoloration-causing performance of the device itself is only slightly affected.
Overall, the electrochromic device of the invention which introduces nitrogen element has a color-changing range of 1-69%. Whereas existing electrochromic devices, such as those available from vision only, inc., have a range of about 1% to 58% color change under the same transparent substrate. This is mainly due to the lighter color of the electrochromic nitride relative to the electrochromic oxide, which generally increases the light transmittance of the film layers deposited on the transparent substrate, e.g., the first and second electrochromic layers 110, 120.
The device may be reversibly cycled between a bleached state and a colored state when in operation. In the bleached state, lithium ions are caused to pass through the ion conducting layer 115 and into the first electrochromic layer 110 containing the cathode electrochromic material by applying a voltage at the first and second conductive layers 105 and 125, and the second electrochromic layer 120 containing the anode electrochromic material is also caused to enter a colored state together with the first electrochromic layer 110 due to the exit of lithium ions. When the voltage potentials applied at first conductive layer 105 and second conductive layer 125 are reversed, lithium ions leave first electrochromic layer 110 and pass back into second electrochromic layer 120 through ion conductive layer 115. Thereby, the device is switched to a bleached state. Depending on the voltage control, the electrochromic device may not only switch back and forth between the bleached state and the colored state, but may also switch to one or more intermediate color states between the bleached state and the colored state.
Finally, in the process of manufacturing the conventional electrochromic device, the conventional electrochromic device may contain more or less part of nitrogen element because the effect of absolute vacuum cannot be achieved due to the air tightness of the environment. The inventors herein have required that nitrogen in a conventional electrochromic device is an environmental error only, and taking a single layer in a conventional electrochromic device as an example, the content of nitrogen atoms in mole number of the total atoms is about 0.004%, and the effect of the above-described nitrogen-containing electrochromic device cannot be obtained.
The invention also discloses a manufacturing method of the nitrogen-containing electrochromic device, which comprises the following steps:
step S201, isolating the target material from the outside air.
In order to prevent ions sputtered from the target from being secondarily oxidized by external oxygen during reactive sputtering, so that the required valence state of the metal ions cannot be obtained, it is necessary to keep an oxygen-free inert gas atmosphere outside the sputtering region, and ensure that the oxidation reaction of the ions only occurs inside the sputtering region. In this embodiment, a pumping channel is used to pump away the oxygen-containing gas from the sputtering region around the target.
In step S202, the first target is subjected to reactive sputtering with inert gas doped with oxygen and nitrogen-containing gas to form the first electrochromic layer 110 on the substrate having the first conductive layer 105.
The first conductive layer 105 may be directly deposited on the substrate 100 using a vacuum plating, evaporation plating, sol-gel process, or the like, or the first electrochromic layer 110 may be directly deposited on the substrate 100 having the first conductive layer 105.
The first electrochromic layer 110 reactively sputters a first target onto the first conductive layer 105 by a plasma vacuum plating process. Reactive sputtering is specifically performed with an inert gas, preferably argon, and doped with oxygen and a nitrogen-containing gas. The first target may be one or more of tungsten, molybdenum, niobium, titanium, tantalum. During sputtering, the metal on the target is ionized and deposited on the substrate under the action of a magnetic field formed by an N magnet and an S magnet fixed around the target. In order to effectively control the oxidation valence state, the mixed gas in the plasma state and metal ions can be pumped away by using a pumping channel, and at the moment, the metal deposited on the substrate cannot be kept in an oxygen-containing atmosphere, so that secondary oxidation cannot be caused. Meanwhile, the power of the air extraction channel is also adjusted, so that the mixed gas in a plasma state and the metal ions stay on the periphery of the substrate for a sufficient time, and the metal ions are deposited on the substrate.
Further, the nitrogen-containing gas may include: nitrogen (N) 2 ) Ammonia (NH) 3 ) Nitric Oxide (NO), nitrogen dioxide (NO 2 ) Dinitrogen oxide (N) 2 O), nitrogen Fluoride (NF) 3 ) And other mixtures comprising the aforementioned gases, and the molar ratio of nitrogen in the mixture is such as to achieve the object of the invention. Specifically, in performing the deposition of the first electrochromic layer 110, or the deposition of the ion conducting layer 115 and the second electrochromic layer 120 described below, all gases should include inert gases as carrier gases, and oxygen and nitrogen-containing gases as reactant gases, regardless of the manner in which they enter the reactor. Taking the first electrochromic layer 110 as an example, the mixing ratio of the nitrogen-containing gas in the reaction gas must also reach a level sufficient to enable the nitrogen element in the deposited first electrochromic layer 110 to occupy 0.05% -20% of the total atomic mole number. In the preferred embodiment, the mixing ratio of nitrogen and oxygen in the reaction gas is (0.1-10) to 1.
In addition, when other nitrogen-containing gases such as ammonia gas, nitrogen fluoride, etc. are used, the impurity elements therein are extracted by the extraction passage during the sputter deposition process because they cannot form stable compounds with the metal.
Step S203 forms an ion conducting layer on the first electrochromic layer.
The third target is subjected to reactive sputtering by vacuum plating, magnetron sputtering, or the like to form an ion conductive layer 115 on the first electrochromic layer 110. The third target may be a conventional target in the prior art, such as lithium, silicon, cobalt, boron, phosphorus, or a mixture thereof.
Furthermore, a nitrogen-containing gas circuit can be additionally added on the conventional magnetron sputtering equipment and independently introduced into the reaction chamber for reactive sputtering. According to the requirement, a plurality of gas paths containing nitrogen elements can be added, so that the concentration of the local nitrogen-containing gas in the reactive sputtering process can be adjusted, the nitrogen content of different areas on the ion conducting layer can be controlled, the ion transmission speed of the electrochromic device can be regulated and controlled, the defects of the device can be further reduced, and the ion transmission speeds of different areas of the electrochromic device can be kept consistent. In another embodiment of the present invention, the ion transmission speed of different areas on the electrochromic device can be regulated so that the color change speed is uneven, and the ion transmission speed of certain areas on the electrochromic device can be 0 under extreme conditions, so as to achieve the purpose of forming a pattern or a pattern on the electrochromic device.
Step S204, a second electrochromic layer is formed on the ion conducting layer.
The second electrochromic layer 120 may be doped with oxygen and nitrogen gas by using nickel, iridium, tungsten, cobalt, manganese, etc. as the second target material, and reactive sputtering is performed by using inert gas as carrier gas, and the sputtering process is similar to that of the first electrochromic layer 110, and will not be repeated here. In addition, as pure metal nickel and metal cobalt have magnetism, the arrangement process of particles can be interfered in the magnetron sputtering process, and therefore, alloys containing tungsten and provided with the metals can be used to achieve the aim of demagnetizing the target.
In step S205, a second conductive layer is formed on the second electrochromic layer.
The second conductive layer 125 is formed in the same manner as the first conductive layer 105, and will not be described here again.
The foregoing describes in detail preferred embodiments of the present invention. It should be understood that numerous modifications and variations can be made in accordance with the concepts of the invention without requiring creative effort by one of ordinary skill in the art. Therefore, all technical solutions which can be obtained by logic analysis, reasoning or limited experiments based on the prior art by the person skilled in the art according to the inventive concept shall be within the scope of protection defined by the claims.
Claims (15)
1. A nitrogen-containing electrochromic device comprising a substrate, a first conductive layer, a first electrochromic layer, an ion conducting layer, a second electrochromic layer, and a second conductive layer;
the first conductive layer is stacked on the substrate, the first electrochromic layer is stacked on the first conductive layer, the ion conductive layer is stacked on the first electrochromic layer, the second electrochromic layer is stacked on the ion conductive layer, and the second conductive layer is stacked on the second electrochromic layer;
wherein the first electrochromic layer and the second electrochromic layer comprise nitrogen;
wherein, the first electrochromic layer adopts metal oxynitride deposition coating film with a polycrystalline structure; wherein nitrogen ions replace a portion of oxygen ions to form a crystal lattice asymmetry.
2. The nitrogen-containing electrochromic device according to claim 1, wherein the number of moles of nitrogen atoms in the first electrochromic layer is 0.05 to 20% of the number of moles of atoms in total.
3. The nitrogen-containing electrochromic device according to claim 1, wherein the number of moles of nitrogen atoms in the second electrochromic layer is 0.05 to 15% of the number of moles of atoms in total.
4. The nitrogen-containing electrochromic device according to claim 1, wherein a cathodic coloring material is included in the first electrochromic layer and an anodic coloring material is included in the second electrochromic layer.
5. The nitrogen-containing electrochromic device according to claim 4, wherein said cathodic coloring material is selected from the group consisting of: tungsten oxynitride, molybdenum oxynitride, niobium oxynitride, titanium oxynitride, tantalum oxynitride; the anodic coloring material is selected from the group consisting of: nickel oxynitride, iridium oxynitride, manganese oxynitride, cobalt oxynitride, tungsten nickel oxynitride, tungsten iridium oxynitride, tungsten manganese oxynitride, and tungsten cobalt oxynitride.
6. A nitrogen-containing electrochromic device comprising a substrate, a first conductive layer, a first electrochromic layer, an ion conducting layer, a second electrochromic layer, and a second conductive layer;
the first conductive layer is stacked on the substrate, the first electrochromic layer is stacked on the first conductive layer, the ion conductive layer is stacked on the first electrochromic layer, the second electrochromic layer is stacked on the ion conductive layer, and the second conductive layer is stacked on the second electrochromic layer;
wherein the ion conducting layer comprises nitrogen;
wherein the ion conductive layer employs an oxynitride having a function of transporting ions and simultaneously blocking movement of electrons to reduce the thickness of the ion conductive layer;
the preparation method of the nitrogen-containing electrochromic device comprises the following steps:
isolating the atmosphere of the target reaction sputtering zone from the atmosphere of the cavity outside the reaction zone, wherein the target comprises a first target and a second target;
performing reactive sputtering on the first target material by using inert gas doped oxygen and nitrogen-containing gas, and forming a first electrochromic layer on the first conductive layer; wherein, the first electrochromic layer adopts metal oxynitride deposition coating film with a polycrystalline structure; wherein a portion of the oxygen ions are replaced with nitrogen ions to form a crystal lattice asymmetry;
forming an ion conducting layer on the first electrochromic layer;
performing reactive sputtering on the second target material by using the inert gas doped oxygen and the nitrogen-containing gas to form a second electrochromic layer on the ion conducting layer;
a second conductive layer is formed on the second electrochromic layer.
7. The nitrogen-containing electrochromic device according to claim 6, wherein the moles of nitrogen atoms in the ion conducting layer are 0.05 to 30% of the moles of total atoms.
8. The nitrogen-containing electrochromic device according to claim 6, wherein the thickness of the ion conducting layer is 3 nm to 5 nm.
9. The nitrogen-containing electrochromic device according to claim 6, wherein the nitrogen-containing electrochromic device comprises a plurality of electrochromic regions, the rate of change of which is regulated by the nitrogen content of the ion conducting layer.
10. The nitrogen-containing electrochromic device according to claim 6, wherein the ion conducting layer is a material selected from the group consisting of: lithium silicon oxynitride, lithium tantalum oxynitride, lithium niobium oxynitride, lithium cobalt oxynitride, lithium aluminum oxynitride, lithium phosphorus oxynitride, and lithium boron oxynitride.
11. The nitrogen-containing electrochromic device according to claim 6, wherein the nitrogen-containing gas comprises a group consisting of: nitrogen, ammonia, nitric oxide, nitrogen dioxide, nitrous oxide, nitrogen fluoride.
12. The nitrogen-containing electrochromic device according to claim 6, wherein the first target comprises the group consisting of: tungsten, molybdenum, niobium, titanium, tantalum.
13. The nitrogen-containing electrochromic device according to claim 6, wherein the second target comprises the group consisting of: nickel, iridium, cobalt, manganese, tungsten.
14. The nitrogen-containing electrochromic device according to claim 6, wherein the target further comprises a third target; the ion conducting layer is formed on the first electrochromic layer by reactive sputtering the third target with inert gas doped oxygen and nitrogen containing gas.
15. The nitrogen-containing electrochromic device of claim 14 wherein said nitrogen-containing gas enters the reaction chamber through a plurality of separate gas paths when said ion conducting layer is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010215936.1A CN111338149B (en) | 2020-03-24 | 2020-03-24 | Nitrogen-containing electrochromic device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010215936.1A CN111338149B (en) | 2020-03-24 | 2020-03-24 | Nitrogen-containing electrochromic device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111338149A CN111338149A (en) | 2020-06-26 |
| CN111338149B true CN111338149B (en) | 2023-07-28 |
Family
ID=71186194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010215936.1A Active CN111338149B (en) | 2020-03-24 | 2020-03-24 | Nitrogen-containing electrochromic device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111338149B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016085764A1 (en) * | 2014-11-26 | 2016-06-02 | View, Inc. | Counter electrode for electrochromic devices |
| KR102293439B1 (en) * | 2010-04-30 | 2021-08-25 | 뷰, 인크. | Electrochromic devices |
| FR3031197B1 (en) * | 2014-12-31 | 2017-06-16 | Saint Gobain | METHOD FOR RAPID THERMAL TREATMENT OF A COMPLETE SOLID ELECTROCHROME STACK |
| CN107740059B (en) * | 2017-10-19 | 2019-12-10 | 浙江上方电子装备有限公司 | Ionization method of electrochromic device, preparation method and product |
| CN110646997B (en) * | 2019-09-29 | 2022-07-08 | 中北大学 | All-inorganic solid electrochromic device and preparation method thereof |
-
2020
- 2020-03-24 CN CN202010215936.1A patent/CN111338149B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| 王伟 等.掺氮对WO3薄膜电致变色调制性能的影响.《中国有色金属学报》.第25卷(第25期),2471-2477. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111338149A (en) | 2020-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20220204398A1 (en) | Counter electrode for electrochromic devices | |
| US11866647B2 (en) | Electrochromic material and method of manufacturing thereof | |
| US8004744B2 (en) | Electrochromic devices having improved ion conducting layers | |
| CN109143714B (en) | Electrochromic device and preparation method thereof | |
| JP2022133443A (en) | Electrochromic device and positive pole coloring electrochromic substance | |
| KR102010733B1 (en) | Electrochromic device | |
| US20090057137A1 (en) | Synthesizing thin films of lithiated transition metal oxide for use in electrochemical and battery devices | |
| CN111142304A (en) | All-solid-state electrochromic device and method of making the same | |
| CN110398867B (en) | Electrochromic device and preparation method thereof | |
| CN112394580B (en) | All-solid-state quick-response electrochromic device and preparation method thereof | |
| US10996535B1 (en) | Electrochromic device with buffer layer(s) | |
| CN111474793B (en) | Method for enriching lithium in electrochromic device and electrochromic device | |
| CN111338149B (en) | Nitrogen-containing electrochromic device and preparation method thereof | |
| CN112470065B (en) | Electrochemical device and method of forming the same | |
| CN111290186B (en) | Method for forming film microstructure of electrochromic device and electrochromic device | |
| CN113641052B (en) | Electrochromic device with adjustable coloring depth and preparation method thereof | |
| KR102836781B1 (en) | Electrochromic device and manufacturing method thereof | |
| KR102170911B1 (en) | Manufacturing method of electrochromic device and electrochromic device thereby | |
| KR20250083695A (en) | Electrochromic device and manufacturing method thereof | |
| KR20180023383A (en) | Electrochromic device and method of preparing the same | |
| CN112987433A (en) | Color-adjustable glass and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 226601 No.28 Nanhai Avenue middle, Hai'an City, Nantong City, Jiangsu Province Applicant after: Jiangsu prosperous Yingcai Technology Co.,Ltd. Applicant after: NANTONG FANHUA NEW MATERIAL TECHNOLOGY Co.,Ltd. Address before: No. 188, Ninghai South Road, Hai'an County, Nantong City, Jiangsu Province 226699 Applicant before: JIANGSU FANHUA GLASS Co.,Ltd. Applicant before: NANTONG FANHUA NEW MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |