[go: up one dir, main page]

CN111323879A - Optical module - Google Patents

Optical module Download PDF

Info

Publication number
CN111323879A
CN111323879A CN202010283655.XA CN202010283655A CN111323879A CN 111323879 A CN111323879 A CN 111323879A CN 202010283655 A CN202010283655 A CN 202010283655A CN 111323879 A CN111323879 A CN 111323879A
Authority
CN
China
Prior art keywords
heating unit
substrate
temperature
optical module
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010283655.XA
Other languages
Chinese (zh)
Inventor
徐俊
郑睿
陈亦凡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Juli Xinchuang Investment Enterprise (Limited Partnership)
Original Assignee
Suzhou Yirui Optoelectronics Technology Co ltd
Yirui Optoelectronic Technology Anhui Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Yirui Optoelectronics Technology Co ltd, Yirui Optoelectronic Technology Anhui Co ltd filed Critical Suzhou Yirui Optoelectronics Technology Co ltd
Priority to CN202010283655.XA priority Critical patent/CN111323879A/en
Publication of CN111323879A publication Critical patent/CN111323879A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4266Thermal aspects, temperature control or temperature monitoring
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4274Electrical aspects
    • G02B6/428Electrical aspects containing printed circuit boards [PCB]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

本发明涉及的光模块中的激光器芯片包括衬底、以及集成在衬底的上表面的波导,衬底的上表面还设置有给波导进行温度补偿的加热单元,加热单元靠近波导,通过在激光器芯片的衬底的上表面靠近波导位置处设置有给波导进行温度补偿的加热单元,实现加热单元与波导之间的直接传热,避免了热量的损失,极大提升加热效率,降低功耗,从而轻松实现工业级温度范围内对激光器芯片的中心波长进行调谐,得到满足5G前传MWDM波长范围的光模块,放宽了激光器芯片的波长范围,降低了光模块的功耗水平,提高了激光器芯片的良率,可以实现面向5G前传应用场景,从而不再使用昂贵的TEC进行温度调谐,节省了5G前传光模块的物料成本。

Figure 202010283655

The laser chip in the optical module involved in the present invention includes a substrate and a waveguide integrated on the upper surface of the substrate. The upper surface of the substrate is further provided with a heating unit for temperature compensation of the waveguide, and the heating unit is close to the waveguide. The upper surface of the substrate of the chip is provided with a heating unit for temperature compensation of the waveguide, which realizes direct heat transfer between the heating unit and the waveguide, avoids heat loss, greatly improves heating efficiency, and reduces power consumption. In this way, it is easy to tune the center wavelength of the laser chip within the industrial temperature range, and obtain an optical module that meets the wavelength range of 5G fronthaul MWDM, which broadens the wavelength range of the laser chip, reduces the power consumption of the optical module, and improves the laser chip. The yield can be achieved for 5G fronthaul application scenarios, so that expensive TECs are no longer used for temperature tuning, which saves the material cost of 5G fronthaul optical modules.

Figure 202010283655

Description

光模块Optical module

技术领域technical field

本发明涉及一种光模块,属于光通信技术领域。The invention relates to an optical module and belongs to the technical field of optical communication.

背景技术Background technique

对于光纤通信系统,为充分利用光纤在传输容量上的优势,需要构建波分复用系统,按着传统的划分方式,光纤传输带宽按照网格可分为稀疏波分复用CWDM(CoarseWavelength Division Multiplexing)间隔,密集波分复用间隔,Lan-WDM复用间隔。随着5G系统的建设,提出了新的波分网络的划分方式,称之为Open-WDM/MWDM的方案。激光器芯片的工作波长随着温度变化存在一定的漂移,漂移系数约为0.1nm/℃,工温级环境温度下,全温范围内激光器波长漂移范围约为9.5nm。为了保证通道之间的串扰控制,对于CWDM复用方式,要求波长偏移范围不超过6.5nm,对于其他复用系统,偏移量的控制更加严格。传统技术方案是使用热电制冷器TEC(Thermal Electric Cooler)来控制激光器工作环境温度,但是由于TEC工作时需要专用的芯片加以控制,并且TEC在加热和致冷的工作状态,随着温度控制范围的增加,效率会随之降低,导致产生大量的无效电能损耗。随着模块功耗上的限制,往往不能满足实际模块使用需求。5G光纤传输网络对于光模块的成本和功耗都严格的要求,目前,为了能够在工业温度环境中(-40℃-85℃)工作,利用在激光器外部贴装加热薄片,或缠绕加热电阻丝,通过热传导的方式将热量传递到内部激光器,但是此方法热传导效率低功耗大,同时也增加了器件体积。另外,将激光器和加热器放置在热隔离基板上,此种方式虽然在低温状态下具有很好的加热效果,但是热隔离基板会阻碍管芯的散热,使得组件适应高温环境的工作能力降低。还有的方法是将加热器设置在靠近激光器芯片的载体上,但是,需要将激光器芯片连通的载体一同加热,载体体积要远远大于激光器的体积,加热状态下大部分热量都用于载体加热,造成效率低下。For optical fiber communication systems, in order to make full use of the advantages of optical fibers in transmission capacity, it is necessary to build a wavelength division multiplexing system. According to the traditional division method, the optical fiber transmission bandwidth can be divided into sparse wavelength division multiplexing CWDM (Coarse Wavelength Division Multiplexing) according to the grid. ) interval, dense wavelength division multiplexing interval, Lan-WDM multiplexing interval. With the construction of the 5G system, a new division method of the wavelength division network is proposed, which is called the Open-WDM/MWDM scheme. The operating wavelength of the laser chip has a certain drift with the temperature change, and the drift coefficient is about 0.1nm/℃. At the working temperature, the laser wavelength drift range is about 9.5nm in the full temperature range. In order to ensure the crosstalk control between channels, for the CWDM multiplexing mode, the wavelength offset range is required to be no more than 6.5nm. For other multiplexing systems, the offset control is more stringent. The traditional technical solution is to use a thermoelectric cooler TEC (Thermal Electric Cooler) to control the working environment temperature of the laser, but because the TEC needs a dedicated chip to control it, and the TEC is in the working state of heating and cooling, with the temperature control range. Increase, the efficiency will decrease, resulting in a large amount of invalid power loss. With the limitation of module power consumption, it often cannot meet the actual module usage requirements. The 5G optical fiber transmission network has strict requirements on the cost and power consumption of the optical module. At present, in order to work in an industrial temperature environment (-40°C-85°C), a heating sheet is mounted outside the laser, or a heating resistance wire is wound. , the heat is transferred to the internal laser through thermal conduction, but this method has low thermal conduction efficiency and large power consumption, and also increases the size of the device. In addition, the laser and heater are placed on the thermal isolation substrate. Although this method has a good heating effect at low temperature, the thermal isolation substrate will hinder the heat dissipation of the die, which reduces the working ability of the component to adapt to the high temperature environment. Another method is to set the heater on the carrier close to the laser chip. However, the carrier connected to the laser chip needs to be heated together. The volume of the carrier is much larger than that of the laser. Most of the heat in the heating state is used for heating the carrier. , resulting in low efficiency.

发明内容SUMMARY OF THE INVENTION

本发明的目的在于提供一种可有效调节发射波长以满足5G前传MWDM波长范围的光模块。The purpose of the present invention is to provide an optical module that can effectively adjust the emission wavelength to meet the wavelength range of 5G fronthaul MWDM.

为达到上述目的,本发明提供如下技术方案:一种光模块,包括壳体、设置在所述壳体内的光发射组件、以及与所述光发射组件连接的电路板,所述光发射组件包括激光器芯片,所述激光器芯片包括衬底、以及集成在所述衬底的上表面的波导,所述衬底的上表面还设置有给所述波导进行温度补偿的加热单元,所述加热单元靠近所述波导。In order to achieve the above object, the present invention provides the following technical solutions: an optical module, comprising a housing, a light emitting component disposed in the housing, and a circuit board connected to the light emitting component, the light emitting component comprising: A laser chip, the laser chip includes a substrate and a waveguide integrated on the upper surface of the substrate, the upper surface of the substrate is further provided with a heating unit for temperature compensation of the waveguide, and the heating unit is close to the the waveguide.

进一步地,所述加热单元与所述波导之间的距离为10um~100um。Further, the distance between the heating unit and the waveguide is 10um˜100um.

进一步地,所述加热单元通过导热胶固定在所述衬底上表面。Further, the heating unit is fixed on the upper surface of the substrate by thermally conductive glue.

进一步地,所述加热单元完全固定在所述衬底上表面。Further, the heating unit is completely fixed on the upper surface of the substrate.

进一步地,所述加热单元部分固定在所述衬底上表面。Further, the heating unit is partially fixed on the upper surface of the substrate.

进一步地,所述光模块包括基板,所述激光器芯片设置在所述基板上,所述加热单元与所述基板之间设置有用以隔热的绝热单元。Further, the optical module includes a substrate, the laser chip is disposed on the substrate, and a heat insulating unit for heat insulation is disposed between the heating unit and the substrate.

进一步地,所述加热单元为由Ti金属形成的热电阻。Further, the heating unit is a thermal resistor formed of Ti metal.

进一步地,所述加热单元的电阻值由如下公式确定:Further, the resistance value of the heating unit is determined by the following formula:

R=ρ*L/SR=ρ*L/S

其中,R为加热单元的电阻值;ρ代表加热单元的电阻率;L为加热单元的长度;S为垂直于电流方向上加热单元的横截面积。Among them, R is the resistance value of the heating unit; ρ represents the resistivity of the heating unit; L is the length of the heating unit; S is the cross-sectional area of the heating unit perpendicular to the current direction.

进一步地,所述光模块还包括用以检测温度的温度传感器和与所述温度传感器、及所述加热单元信号连接的温度控制单元,所述温度控制单元根据所述温度传感器检测到的温度值控制所述加热单元启动或关闭。Further, the optical module further includes a temperature sensor for detecting temperature and a temperature control unit signally connected to the temperature sensor and the heating unit, and the temperature control unit is based on the temperature value detected by the temperature sensor. The heating unit is controlled to be turned on or off.

进一步地,用于所述光模块的温度补偿控制方法包括:Further, the temperature compensation control method for the optical module includes:

所述温度传感器采集当前温度值;The temperature sensor collects the current temperature value;

基于所述温度传感器所采集到的温度值,所述温度控制单元判断所述温度值是否低于预设温度阀值;Based on the temperature value collected by the temperature sensor, the temperature control unit determines whether the temperature value is lower than a preset temperature threshold;

若低于所述预设温度阀值,则控制所述加热单元启动。If the temperature is lower than the preset temperature threshold, the heating unit is controlled to start.

本发明的有益效果在于:本发明通过在激光器芯片的衬底的上表面靠近波导位置处设置有给波导进行温度补偿的加热单元,实现加热单元与波导之间的直接传热,避免了热量的损失,极大提升加热效率,降低功耗,从而轻松实现工业级温度范围内对激光器芯片的中心波长进行调谐,得到满足5G前传MWDM波长范围的光模块,放宽了激光器芯片的波长范围,降低了光模块的功耗水平,提高了激光器芯片的良率,可以实现面向5G前传应用场景,从而不再使用昂贵的TEC进行温度调谐,节省了5G前传光模块的物料成本。The beneficial effects of the present invention are: the present invention realizes the direct heat transfer between the heating unit and the waveguide by arranging the heating unit for temperature compensation of the waveguide at the position of the upper surface of the substrate of the laser chip close to the waveguide, thereby avoiding the heat transfer. loss, greatly improve heating efficiency and reduce power consumption, so as to easily tune the center wavelength of the laser chip within the industrial temperature range, and obtain an optical module that meets the wavelength range of 5G fronthaul MWDM, which broadens the wavelength range of the laser chip and reduces the The power consumption level of the optical module improves the yield rate of the laser chip, which can realize the 5G fronthaul application scenario, so that the expensive TEC is no longer used for temperature tuning, which saves the material cost of the 5G fronthaul optical module.

上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,并可依照说明书的内容予以实施,以下以本发明的较佳实施例并配合附图详细说明如后。The above description is only an overview of the technical solution of the present invention. In order to understand the technical means of the present invention more clearly, and implement it according to the content of the description, the preferred embodiments of the present invention are described in detail below with the accompanying drawings.

附图说明Description of drawings

图1为本发明第一实施例所示的设置有加热单元的光模块的部分结构示意图;FIG. 1 is a partial structural schematic diagram of an optical module provided with a heating unit according to the first embodiment of the present invention;

图2为为本发明第二实施例所示的设置有加热单元的光模块的部分结构示意图;2 is a partial structural schematic diagram of an optical module provided with a heating unit according to a second embodiment of the present invention;

图3为本发明第三实施例所示的设置有加热单元的光模块的部分结构示意图;3 is a partial structural schematic diagram of an optical module provided with a heating unit according to a third embodiment of the present invention;

图4为图3中所示的加热单元的结构示意图;FIG. 4 is a schematic structural diagram of the heating unit shown in FIG. 3;

图5为图3中所示的加热单元在另一方向上的结构示意图;FIG. 5 is a schematic structural diagram of the heating unit shown in FIG. 3 in another direction;

图6为本发明第四实施例所示的设置有加热单元的光模块的部分结构示意图。FIG. 6 is a partial structural schematic diagram of an optical module provided with a heating unit according to a fourth embodiment of the present invention.

具体实施方式Detailed ways

下面将结合附图对本发明的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

在本发明的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的机构或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the indicated mechanism or element must have a specific orientation or a specific orientation. construction and operation, and therefore should not be construed as limiting the invention. Furthermore, the terms "first", "second", and "third" are used for descriptive purposes only and should not be construed to indicate or imply relative importance.

在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。In the description of the present invention, it should be noted that the terms "installed", "connected" and "connected" should be understood in a broad sense, unless otherwise expressly specified and limited, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood in specific situations.

此外,下面所描述的本发明不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

本发明一实施例所示的光模块包括壳体、设置在壳体内的光接收组件、光发射组件、与光接收组件和光发射组件连接的电路板、以及设置在壳体上且与光接收组件和光发射组件信号连接用以发送或接收电信号的接口单元,其中,光接收组件用以将接收到的光信号转换成电信号输出至接口单元;光发射模块用以将接口单元发送的电信号转换成光信号输出。光模块还包括与接口单元、光接收组件、以及光发射组件信号连接的控制单元和为接口单元、光接收组件、以及光发射组件提供电源并控制各个组件的开启与关闭的供电单元,控制单元用于通过内部通信接口实现对光模块的控制。光模块的结构为现有结构,光模块的制备方法为现有技术,在此不再过多赘述。An optical module shown in an embodiment of the present invention includes a housing, a light-receiving component disposed in the housing, a light-emitting component, a circuit board connected to the light-receiving component and the light-emitting component, and a light-receiving component disposed on the housing and connected to the light-receiving component An interface unit that is signal-connected with the light emitting component for sending or receiving electrical signals, wherein the light receiving component is used to convert the received optical signal into an electrical signal and output to the interface unit; the light emitting module is used to transmit the electrical signal sent by the interface unit. Converted to optical signal output. The optical module also includes a control unit that is signally connected to the interface unit, the light receiving component, and the light emitting component, and a power supply unit that provides power for the interface unit, the light receiving component, and the light emitting component and controls the opening and closing of each component. The control unit Used to control the optical module through the internal communication interface. The structure of the optical module is the existing structure, and the preparation method of the optical module is the existing technology, which will not be repeated here.

光发射组件包括激光器芯片,激光器芯片包括衬底、以及集成在衬底的上表面的波导,本实施例中,激光器芯片为DFB激光器芯片,DFB激光器芯片为脊型波导结构,诚然,在其他实施例中,激光器芯片也可以为其他类型的芯片,在此不做具体限制。其中,衬底可以为SiC衬底,但不限于此,也可以为其他衬底。激光器芯片的横截面自下而上包括磷化铟(InP)衬底、缓冲生长层、下限制层、下波导层、有源层(Multi Quantum Well)、上限制层、上波导层、磷化铟(InP)间隔层和欧姆接触层。DFB激光器芯片结构为现有结构,DFB激光器芯片的制备方法为现有技术,在此不再过多赘述。The light emitting component includes a laser chip, and the laser chip includes a substrate and a waveguide integrated on the upper surface of the substrate. In this embodiment, the laser chip is a DFB laser chip, and the DFB laser chip is a ridge waveguide structure. Of course, in other implementations In an example, the laser chip may also be other types of chips, which are not specifically limited here. Wherein, the substrate may be a SiC substrate, but is not limited thereto, and may also be other substrates. The cross section of the laser chip from bottom to top includes an indium phosphide (InP) substrate, a buffer growth layer, a lower confinement layer, a lower waveguide layer, an active layer (Multi Quantum Well), an upper confinement layer, an upper waveguide layer, and a phosphating layer. Indium (InP) spacer layer and ohmic contact layer. The structure of the DFB laser chip is the existing structure, and the preparation method of the DFB laser chip is the prior art, which will not be repeated here.

为了在工业级温度范围(-40℃-85℃)内对激光器芯片的中心波长进行调谐,得到满足5G前传MWDM波长范围的光模块,可以使用单项温控技术,在低温环境下,只需要对激光器加热来提高工作温度,从而缩小激光器的工作温度范围,从而降低控制电路的难度。或者通过优化热传导方式,从而提高加热效率,降低功耗。本实施例中,衬底的上表面设置有给波导进行温度补偿的加热单元,加热单元靠近波导,加热单元与波导之间的距离为10um~100um,具体数值在此不做限制,可根据实际需要进行设置。对于Oclaro HL13BFCP00系列芯片,加热单元与波导之间的距离为20um~50um,同样的,对于Macom 25G DFB芯片中1xxD-25GLxx11-xxx和1xxx-25B-Lxx11-S3系列,加热单元与波导之间的距离为20um~50um。In order to tune the center wavelength of the laser chip within the industrial temperature range (-40°C-85°C) and obtain an optical module that meets the wavelength range of 5G fronthaul MWDM, a single temperature control technology can be used. The laser is heated to increase the operating temperature, thereby reducing the operating temperature range of the laser, thereby reducing the difficulty of the control circuit. Or by optimizing the heat conduction method, the heating efficiency can be improved and the power consumption can be reduced. In this embodiment, the upper surface of the substrate is provided with a heating unit for temperature compensation of the waveguide, the heating unit is close to the waveguide, and the distance between the heating unit and the waveguide is 10um to 100um. Setup is required. For the Oclaro HL13BFCP00 series chips, the distance between the heating unit and the waveguide is 20um~50um. Similarly, for the 1xxD-25GLxx11-xxx and 1xxx-25B-Lxx11-S3 series in the Macom 25G DFB chips, the distance between the heating unit and the waveguide is The distance is 20um ~ 50um.

在此需要说明的是,因衬底的上表面的面积较大,将加热单元设置在衬底的上表面,加热单元靠近波导设置时,使得加热单元与衬底的接触的面积足够大,以此提高了加热单元对波导所在位置附近的衬底的加热速率,避免了热量经由一个或多个热沉、穿过多个不同厚度载体,而直接对波导所在位置加热,极大提升了加热效率,降低了功耗。诚然,加热单元设置的数量可以为多个,多个加热单元设置在靠近波导的位置处。It should be noted here that due to the large area of the upper surface of the substrate, the heating unit is arranged on the upper surface of the substrate. When the heating unit is arranged close to the waveguide, the contact area between the heating unit and the substrate is large enough to avoid This improves the heating rate of the heating unit to the substrate near the location of the waveguide, and avoids the heat passing through one or more heat sinks and through multiple carriers of different thicknesses to directly heat the location of the waveguide, which greatly improves the heating efficiency. , reducing power consumption. Of course, the number of heating units provided may be multiple, and the plurality of heating units are provided at positions close to the waveguide.

具体的,加热单元通过导热胶固定在衬底上表面,以此实现加热单元尽可能多的与衬底上表面重合,从而提高对波导的加热效率,其中,加热单元可以完全固定在衬底上表面,加热单元也可以部分固定在衬底上表面。诚然,在其他实施例中,加热单元也可以使用其他材料或者方式固定在在衬底上表面,在此不做具体限制。Specifically, the heating unit is fixed on the upper surface of the substrate through thermal conductive glue, so that the heating unit overlaps with the upper surface of the substrate as much as possible, thereby improving the heating efficiency of the waveguide, wherein the heating unit can be completely fixed on the substrate The heating unit can also be partially fixed on the upper surface of the substrate. Certainly, in other embodiments, the heating unit may also be fixed on the upper surface of the substrate by using other materials or methods, which is not limited herein.

请参见图1,本发明第一实施例所示的光模块包括基板11,基板11上设置有金属电极111,其中,金属电极111包括正电极和负电极,正电极和负电极具体所在位置和具体形状,在此不做具体限制,可根据实际需求进行设定和制备,诚然,在其他实施例中,电极也可以为其他材质,在此不一一举例,此外,基板11的集体材质和形状等在此不做具体限制。该基板11为陶瓷片,但对基板11不做具体限制,在其他实施例中,基板11也可以为其他材质。具有衬底121的激光器芯片12设置在基板11上,本实施例中,激光器芯片12通过焊接的方式固定在基板11上,加热单元13通过导热胶水粘接固定在衬底121上表面,在其他实施例中,激光器芯片12和加热单元13的固定方式也可以为其他方式,在此不做具体限制。Referring to FIG. 1, the optical module shown in the first embodiment of the present invention includes a substrate 11, and a metal electrode 111 is disposed on the substrate 11. The metal electrode 111 includes a positive electrode and a negative electrode. The specific locations of the positive electrode and the negative electrode are different from The specific shape is not specifically limited here, and can be set and prepared according to actual needs. It is true that in other embodiments, the electrodes can also be made of other materials, which are not listed here. In addition, the collective material of the substrate 11 and the The shape and the like are not specifically limited here. The substrate 11 is a ceramic sheet, but the substrate 11 is not specifically limited. In other embodiments, the substrate 11 may also be made of other materials. The laser chip 12 with the substrate 121 is disposed on the substrate 11. In this embodiment, the laser chip 12 is fixed on the substrate 11 by welding, and the heating unit 13 is fixed on the upper surface of the substrate 121 by thermally conductive glue. In the embodiment, the fixing manners of the laser chip 12 and the heating unit 13 may also be other manners, which are not specifically limited herein.

本实施例中,加热单元13包括由Ti金属形成的热电阻131,Ti同时满足电阻率高和成本低廉的要求,热电阻131设置在加热基片132的表面上,其中,加热基片132为长方体结构,热电阻131设置在加热基片132的上表面,热电阻131的两端处设置有打线焊盘电极133,一个作为正极,另一个作为负极,通过金丝键合的形式与陶瓷基板11上的金属电极111相连,而后可通过TO针脚或Box金手指向热电阻131引入电流实现加热功能。在其他实施例中,加热基片可以为其他所需要的形状,热电阻也可以为其他电阻率较大的金属材料或者其他材料,此外,加热单元也可以为任何其他可产生热能的器件或者材料,加热单元也可以为其他结构、形状或者形式,在此不再一一举例。In this embodiment, the heating unit 13 includes a thermal resistor 131 formed of Ti metal. Ti meets the requirements of high resistivity and low cost at the same time. The thermal resistor 131 is arranged on the surface of the heating substrate 132, wherein the heating substrate 132 is The rectangular parallelepiped structure, the thermal resistance 131 is arranged on the upper surface of the heating substrate 132, and the two ends of the thermal resistance 131 are provided with wire bonding pad electrodes 133, one as the positive electrode and the other as the negative electrode, which is bonded with the ceramic by gold wire. The metal electrodes 111 on the substrate 11 are connected, and then a current can be introduced to the thermal resistance 131 through TO pins or Box gold fingers to realize the heating function. In other embodiments, the heating substrate can be any other desired shape, the thermal resistance can also be other metal materials or other materials with higher resistivity, and the heating unit can also be any other device or material that can generate thermal energy , the heating unit may also have other structures, shapes or forms, which will not be exemplified here.

热电阻131的长度、宽度、厚度由所需要的电阻值来确定,具体的,热电阻131的电阻值由如下公式确定:The length, width and thickness of the thermal resistor 131 are determined by the required resistance value. Specifically, the resistance value of the thermal resistor 131 is determined by the following formula:

R=ρ*L/SR=ρ*L/S

其中,R为加热单元13的电阻值;ρ代表加热单元13的电阻率;L为加热单元13的长度;S为垂直于电流方向上加热单元13的横截面积。Wherein, R is the resistance value of the heating unit 13; ρ represents the resistivity of the heating unit 13; L is the length of the heating unit 13; S is the cross-sectional area of the heating unit 13 perpendicular to the current direction.

本实施例中,热电阻131为细长条形且排布为类似S形,这样设置,能最大可能的利用空间,使得热电阻131的加热效率最大化,且热电阻131的电阻值根据实际需要进行设置,但需要满足的是当通过100mA的电流时可以对应约500mW的功耗,该热电阻131能对DFB激光器加热以使得DFB激光器产生的波长调谐范围约为5nm。诚然,在其他实施例中,热电阻的形状也可为其他,热电阻的形状在此不做具体限定,可根据实际情况而定。In this embodiment, the thermal resistance 131 is in the shape of an elongated strip and is arranged in an S-like shape. In this way, the space can be used to the greatest extent possible, so that the heating efficiency of the thermal resistance 131 can be maximized, and the resistance value of the thermal resistance 131 is based on the actual It needs to be set, but it needs to meet the power consumption of about 500mW when passing a current of 100mA, and the thermal resistor 131 can heat the DFB laser so that the wavelength tuning range generated by the DFB laser is about 5nm. Certainly, in other embodiments, the shape of the thermal resistance may also be other, and the shape of the thermal resistance is not specifically limited here, and may be determined according to the actual situation.

本实施例中的激光器芯片12足够大,加热单元13可以全部固定在衬底121上表面且靠近设置在衬底121中间位置的波导122,以此实现加热电阻131产生的热量尽可能的多的用以加热波导122。激光器芯片12的衬底121上设置有两个打线焊盘电极123,一个作为正极,另一个作为负极,通过金丝键合的形式与陶瓷基板11上相应的金属电极111相连,而后可通过TO针脚或Box金手指引入电流。The laser chip 12 in this embodiment is large enough, and the heating units 13 can all be fixed on the upper surface of the substrate 121 and close to the waveguide 122 arranged in the middle of the substrate 121, so as to achieve as much heat generated by the heating resistor 131 as possible. Used to heat the waveguide 122 . The substrate 121 of the laser chip 12 is provided with two wire bonding pad electrodes 123, one as the positive electrode and the other as the negative electrode, which are connected to the corresponding metal electrodes 111 on the ceramic substrate 11 in the form of gold wire bonding, and then can be TO pins or Box gold fingers introduce current.

该加热方式可应用在TO封装或者BOX封装等封装方式中,只需在制备过程中在衬底121上表面通过导热胶固定加热单元13即可。This heating method can be applied to packaging methods such as TO packaging or BOX packaging, and it is only necessary to fix the heating unit 13 on the upper surface of the substrate 121 by means of a thermally conductive adhesive during the preparation process.

请参见图2,本发明第二实施例所示的光模块的结构与第一实施例所示的光模块的结构基本相同,不同的是激光器芯片22相对较小,此时,加热单元23可以部分固定在衬底221上表面,加热单元23的另部分超出激光器芯片22,加热单元23与基板21之间设置有用以隔热的绝热单元24,绝热单元24可为绝热垫片24,绝热单元24一方面隔绝加热单元23对衬底221的热量输送,另一方面用以支撑加热单元23,使得加热单元23固定在衬底221上表面与衬底221能够稳定且保持持续贴合。绝热单元24可以通过导热性差的胶水将两端分别固定在加热单元23和基板21上,绝热单元24的尺寸根据实际需要继续设置。在其他实施例中,绝热单元24的材质、形状、与加热单元23和基板21的固定方式都可以为其他,在此不做具体限制。本实施例中,为了使热电阻231尽可能多的与衬底221贴合,将两个打线焊盘电极233并排设置在超出激光器芯片22的部分,进一步提高传热效率。Referring to FIG. 2 , the structure of the optical module shown in the second embodiment of the present invention is basically the same as the structure of the optical module shown in the first embodiment, the difference is that the laser chip 22 is relatively small, at this time, the heating unit 23 can be Part of the heating unit 23 is fixed on the upper surface of the substrate 221, and the other part of the heating unit 23 extends beyond the laser chip 22. An insulating unit 24 is provided between the heating unit 23 and the substrate 21 for heat insulation. The insulating unit 24 can be an insulating gasket 24. On the one hand, 24 insulates the heat transfer from the heating unit 23 to the substrate 221 , and on the other hand, is used to support the heating unit 23 , so that the heating unit 23 is fixed on the upper surface of the substrate 221 and the substrate 221 can be stably and continuously adhered. Two ends of the heat insulating unit 24 can be fixed on the heating unit 23 and the base plate 21 respectively by glue with poor thermal conductivity, and the size of the heat insulating unit 24 can be further set according to actual needs. In other embodiments, the material and shape of the heat insulating unit 24 and the fixing manner of the heating unit 23 and the substrate 21 may be other, which are not specifically limited herein. In this embodiment, in order to make the thermal resistor 231 adhere to the substrate 221 as much as possible, two wire bonding pad electrodes 233 are arranged side by side on the part beyond the laser chip 22 to further improve the heat transfer efficiency.

请参见图3至图5,本发明第三实施例所示的光模块的结构与第一实施例所示的光模块的结构基本相同,不同的是,加热单元33的热电阻331可布满加热基片332的一个表面,在加热基片332的两端处分别设置一个电极薄膜334,且两个电极薄膜334延伸到加热基片332的另一个表面上,在加热基片332的另一个表面上的两个电极薄膜334上设置焊盘333,将布满热电阻331的一面贴合在衬底321上,进一步提高了加热效率,或者以此可减小加热单元33的尺寸,使得加热单元33可加热更小尺寸的激光器芯片32。本实施例中,对电极薄膜334的形状、材质等不做限制。Referring to FIGS. 3 to 5 , the structure of the optical module shown in the third embodiment of the present invention is basically the same as that of the optical module shown in the first embodiment. The difference is that the thermal resistance 331 of the heating unit 33 can be covered with One surface of the heating substrate 332 is heated, an electrode film 334 is respectively provided at both ends of the heating substrate 332, and the two electrode films 334 extend to the other surface of the heating substrate 332, on the other surface of the heating substrate 332 Pads 333 are arranged on the two electrode films 334 on the surface, and the side covered with the thermal resistors 331 is attached to the substrate 321 to further improve the heating efficiency, or the size of the heating unit 33 can be reduced, so that the heating The unit 33 can heat the laser chip 32 of smaller size. In this embodiment, the shape and material of the electrode film 334 are not limited.

请参见图6,本发明第四实施例所示的光模块的结构与第三实施例所示的光模块的结构基本相同,不同的是,激光器芯片42相对较小,加热单元43部分固定在衬底421上表面,加热单元43的另部分超出激光器芯片42,加热单元43与基板41之间设置有用以隔热的绝热单元44,具体的绝热单元44同实施例二所示的绝热单元24完全相同,在此不再赘述。Referring to FIG. 6 , the structure of the optical module shown in the fourth embodiment of the present invention is basically the same as that of the optical module shown in the third embodiment. The difference is that the laser chip 42 is relatively small, and the heating unit 43 is partially fixed on the On the upper surface of the substrate 421, the other part of the heating unit 43 extends beyond the laser chip 42. An insulating unit 44 for heat insulation is provided between the heating unit 43 and the substrate 41. The specific insulating unit 44 is the same as the insulating unit 24 shown in the second embodiment. are exactly the same, and will not be repeated here.

诚然,其他实施例中,为了满足DFB激光器芯片的中心波长在工业温度范围内的波长调谐,加热单元的加热基片的上下表面可都设置有热电阻,具体方法与第一实施例或者第三实施例相同,在此不再赘述。Indeed, in other embodiments, in order to satisfy the wavelength tuning of the central wavelength of the DFB laser chip within the industrial temperature range, the upper and lower surfaces of the heating substrate of the heating unit may be provided with thermal resistors. The specific method is the same as that of the first embodiment or the third embodiment. The embodiments are the same, and are not repeated here.

本申请中,将加热单元直接粘接在激光器芯片的表面,相对于TEC控温的方式,加热单元距离激光器芯片的波导更近,而波导的下方正是激光器芯片有源区发光的位置,因此近的距离有利于热量更快的传递到有源区,温度传递更快,热传递效率更高,波长调谐更容易,因此能够用较小的电功率实现较大的波长调谐范围,降低了光模块的功耗水平。In this application, the heating unit is directly bonded to the surface of the laser chip. Compared with the TEC temperature control method, the heating unit is closer to the waveguide of the laser chip, and the lower part of the waveguide is the position where the active area of the laser chip emits light. Therefore, The short distance is conducive to faster heat transfer to the active area, faster temperature transfer, higher heat transfer efficiency, and easier wavelength tuning. Therefore, a larger wavelength tuning range can be achieved with less electrical power, reducing the need for optical modules. power consumption level.

省去了光模块内的TEC,通过合理设计加热单元工作时的功率波长调谐目标,可以实现远大于TEC温控的温度补偿范围,以满足5G前传MWDM方案要求的中心波长偏差±2.5nm范围内,对激光器芯片的波长挑选留有±1.5nm的余量,并且放宽了激光器芯片的波长挑选要求,从而放宽了单片wafer流片后激光器芯片波长的挑选难度,提高了激光器芯片的波良率,降低光模块物料成本,具体的,5G前传光模块的物料成本可以降低约20%。良率的提升,意味着单片wafer产出的合格芯片数量更多,芯片的价格会降低,这样也间接降低了光模块的成本。本申请所涉及的方法仍然适用于以后出现的6G、7G等。The TEC in the optical module is omitted. By rationally designing the power wavelength tuning target when the heating unit is working, a temperature compensation range far greater than that of the TEC temperature control can be achieved to meet the center wavelength deviation required by the 5G fronthaul MWDM solution within the range of ±2.5nm , leave a margin of ±1.5nm for the wavelength selection of the laser chip, and relax the wavelength selection requirements of the laser chip, thereby relaxing the difficulty of selecting the wavelength of the laser chip after the single wafer tape-out, and improving the wave yield rate of the laser chip , reduce the material cost of the optical module. Specifically, the material cost of the 5G fronthaul optical module can be reduced by about 20%. The increase in yield means that the number of qualified chips produced by a single wafer will be more, and the price of the chip will be reduced, which also indirectly reduces the cost of the optical module. The methods involved in this application are still applicable to 6G, 7G, etc. that appear in the future.

光模块还包括用以检测温度的温度传感器和与温度传感器、及加热单元信号连接的温度控制单元,温度控制单元根据温度传感器检测到的温度值控制加热单元启动或关闭。容易想到的时,温度传感器检测的温度,可以是激光器芯片等部件的温度,本申请中,对温度传感器设置在光模块内的具体位置不做限制,将温度传感器根据实际需要设置在相应位置处,并且对温度传感器的类型也不做限制,可以为热电偶等类型,在此不一一举例。The optical module further includes a temperature sensor for detecting temperature, and a temperature control unit signally connected to the temperature sensor and the heating unit. The temperature control unit controls the heating unit to start or shut down according to the temperature value detected by the temperature sensor. When it is easy to think of, the temperature detected by the temperature sensor can be the temperature of components such as laser chips. In this application, there is no restriction on the specific position of the temperature sensor in the optical module, and the temperature sensor is set at the corresponding position according to actual needs. , and the type of the temperature sensor is not limited, it can be a thermocouple and other types, which are not listed here.

用于光模块的温度补偿控制方法包括:Temperature compensation control methods for optical modules include:

温度传感器采集当前温度值;The temperature sensor collects the current temperature value;

基于温度传感器所采集到的温度值,温度控制单元判断温度值是否低于预设温度阀值;Based on the temperature value collected by the temperature sensor, the temperature control unit determines whether the temperature value is lower than the preset temperature threshold;

若低于预设温度阀值,则控制加热单元启动。If it is lower than the preset temperature threshold, control the heating unit to start.

当温度值高于预设温度阀值,则控制加热单元关闭。When the temperature value is higher than the preset temperature threshold, the heating unit is controlled to be turned off.

具体的预设温度阀值可根据实际情况进行设定,且具体的温度补偿控制方法为现有技术,在此不再赘述。在此需要说明的是,温度控制单元包括至少一个逻辑控制电路,通过至少一个逻辑控制电路实现对温度值与预设温度阀值之间的判定,并控制加热单元启动或关闭。The specific preset temperature threshold can be set according to the actual situation, and the specific temperature compensation control method is in the prior art, which will not be repeated here. It should be noted here that the temperature control unit includes at least one logic control circuit, and the at least one logic control circuit realizes the determination between the temperature value and the preset temperature threshold value, and controls the heating unit to start or shut down.

关于光模块的温度的获取,在其他实施例中,光模块内也可以不设置温度传感器,而是使用波长检测装置检测激光器芯片的波长,依据波长,计算相应的温度,从而控制加热单元的启动或关闭,关于波长检测装置在此不做具体限制,可以为任何能够检测波长的装置。需要说明的是,关于光模块的温度的获取也可以为其他方式,在此不一一列举。Regarding the acquisition of the temperature of the optical module, in other embodiments, a temperature sensor may not be provided in the optical module, but a wavelength detection device is used to detect the wavelength of the laser chip, and the corresponding temperature is calculated according to the wavelength, thereby controlling the activation of the heating unit or off, the wavelength detection device is not specifically limited here, and can be any device capable of detecting wavelengths. It should be noted that the acquisition of the temperature of the optical module may also be in other manners, which are not listed one by one here.

综上,本发明通过在激光器芯片的衬底的上表面靠近波导位置处设置有给波导进行温度补偿的加热单元,实现加热单元与波导之间的直接传热,避免了热量的损失,极大提升加热效率,降低功耗,从而轻松实现工业级温度范围内对激光器芯片的中心波长进行调谐,得到满足5G前传MWDM波长范围的光模块,放宽了激光器芯片的波长范围,降低了光模块的功耗水平,提高了激光器芯片的良率,可以实现面向5G前传应用场景,从而不再使用昂贵的TEC进行温度调谐,节省了5G前传光模块的物料成本。To sum up, in the present invention, a heating unit for compensating the temperature of the waveguide is provided on the upper surface of the substrate of the laser chip near the waveguide, so as to realize the direct heat transfer between the heating unit and the waveguide, avoid the loss of heat, and greatly reduce the loss of heat. Improve heating efficiency and reduce power consumption, so as to easily tune the center wavelength of the laser chip within the industrial temperature range, and obtain an optical module that meets the wavelength range of 5G fronthaul MWDM, which broadens the wavelength range of the laser chip and reduces the power of the optical module. This reduces the power consumption level, improves the yield of laser chips, and can be used in 5G fronthaul application scenarios, so that expensive TECs are no longer used for temperature tuning, which saves the material cost of 5G fronthaul optical modules.

以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity, all possible combinations of the technical features in the above-described embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be regarded as the scope described in this specification.

以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only represent several embodiments of the present invention, and the descriptions thereof are specific and detailed, but should not be construed as a limitation on the scope of the invention patent. It should be pointed out that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can also be made, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims.

Claims (10)

1. An optical module is characterized by comprising a shell, an optical transmission assembly arranged in the shell and a circuit board connected with the optical transmission assembly, wherein the optical transmission assembly comprises a laser chip, the laser chip comprises a substrate and a waveguide integrated on the upper surface of the substrate, the upper surface of the substrate is also provided with a heating unit for performing temperature compensation on the waveguide, and the heating unit is close to the waveguide.
2. The optical module of claim 1, wherein a distance between the heating unit and the waveguide is 10um to 100 um.
3. The optical module as claimed in claim 1, wherein the heating unit is fixed to the upper surface of the substrate by a thermally conductive adhesive.
4. A light module as claimed in claim 3, characterized in that the heating unit is completely fixed to the upper substrate surface.
5. A light module as claimed in claim 3, characterized in that the heating unit part is fixed to the substrate upper surface.
6. The optical module according to claim 5, wherein the optical module includes a substrate on which the laser chip is disposed, and a heat insulating unit for insulating heat is disposed between the heating unit and the substrate.
7. The optical module according to claim 7, wherein the heating unit is a thermal resistor formed of Ti metal.
8. A light module as claimed in claim 1, characterized in that the resistance value of the heating element is determined by the formula:
R=ρ*L/S
wherein R is the resistance value of the heating unit; ρ represents the resistivity of the heating element; l is the length of the heating unit; s is the cross-sectional area of the heating unit perpendicular to the current direction.
9. The light module as claimed in claim 1, further comprising a temperature sensor for detecting a temperature and a temperature control unit in signal connection with the temperature sensor and the heating unit, wherein the temperature control unit controls the heating unit to be turned on or off according to a temperature value detected by the temperature sensor.
10. The optical module according to claim 9, wherein a temperature compensation control method for the optical module comprises:
the temperature sensor collects a current temperature value;
based on the temperature value acquired by the temperature sensor, the temperature control unit judges whether the temperature value is lower than a preset temperature threshold value;
and if the temperature is lower than the preset temperature threshold value, controlling the heating unit to start.
CN202010283655.XA 2020-04-13 2020-04-13 Optical module Pending CN111323879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010283655.XA CN111323879A (en) 2020-04-13 2020-04-13 Optical module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010283655.XA CN111323879A (en) 2020-04-13 2020-04-13 Optical module

Publications (1)

Publication Number Publication Date
CN111323879A true CN111323879A (en) 2020-06-23

Family

ID=71169831

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010283655.XA Pending CN111323879A (en) 2020-04-13 2020-04-13 Optical module

Country Status (1)

Country Link
CN (1) CN111323879A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115327713A (en) * 2022-07-31 2022-11-11 山东华云光电技术有限公司 Industrial optical module with temperature compensation function at receiving end

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11326658A (en) * 1998-05-14 1999-11-26 Furukawa Electric Co Ltd:The Optical module
US6101210A (en) * 1998-07-10 2000-08-08 Bookham Technology Plc External cavity laser
JP2000249853A (en) * 1999-02-26 2000-09-14 Furukawa Electric Co Ltd:The Optical module
CN110995355A (en) * 2019-12-26 2020-04-10 易锐光电科技(安徽)有限公司 Optical module
CN212255792U (en) * 2020-04-13 2020-12-29 易锐光电科技(安徽)有限公司 Optical module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11326658A (en) * 1998-05-14 1999-11-26 Furukawa Electric Co Ltd:The Optical module
US6101210A (en) * 1998-07-10 2000-08-08 Bookham Technology Plc External cavity laser
CN1309827A (en) * 1998-07-10 2001-08-22 布克哈姆技术公共有限公司 External cavity laser
JP2000249853A (en) * 1999-02-26 2000-09-14 Furukawa Electric Co Ltd:The Optical module
CN110995355A (en) * 2019-12-26 2020-04-10 易锐光电科技(安徽)有限公司 Optical module
CN212255792U (en) * 2020-04-13 2020-12-29 易锐光电科技(安徽)有限公司 Optical module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115327713A (en) * 2022-07-31 2022-11-11 山东华云光电技术有限公司 Industrial optical module with temperature compensation function at receiving end
CN115327713B (en) * 2022-07-31 2024-06-04 山东华云光电技术有限公司 Industrial-grade optical module with temperature compensation function at receiving end

Similar Documents

Publication Publication Date Title
CN109473866B (en) TO-CAN transmitting assembly with heating function
KR101788540B1 (en) Optical transmitter module with temperature device and method of manufacturing the same
CN101471337A (en) Light source die set with good radiating performance
CN212255792U (en) Optical module
CN112713496A (en) High-speed laser
US11876345B2 (en) Thermal management for hybrid lasers
CN111323879A (en) Optical module
CN113985540A (en) 800G optical module and preparation method thereof
CN106898945A (en) It is a kind of to be capable of achieving Wavelength stabilized high-power semiconductor laser encapsulating structure
CN113359328A (en) Thermo-optic phase modulation module and optical modulator
CN206575012U (en) It is a kind of that Wavelength stabilized high-power semiconductor laser encapsulating structure can be achieved
CN210200756U (en) High-voltage flip LED light source
CN218216098U (en) Laser transmitter and laser radar
JP3885536B2 (en) Thermoelectric device
CN104718672B (en) photoelectric subassembly
CN112946838A (en) Light emission assembly and optical module using same
CN215641960U (en) Optical module
CN208315541U (en) Heat conductive insulating plate and converter plant
JP2002314154A (en) Thermoelectric apparatus
CN114171659A (en) Deep ultraviolet thin film LED with high light extraction efficiency and preparation method thereof
CN219760239U (en) Low temperature floats coaxial laser packaging structure of area refrigeration
JP2002344066A (en) Laser diode temperature control module and driving method thereof
CN217882295U (en) Semiconductor laser
CN213987298U (en) Temperature control device and radio over fiber communication device
CN116466432A (en) Package structure with thermal AWG chip

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20240726

Address after: 518, Tsinghua Information Port Research Building, No. 13 Langshan Road, Songpingshan Community, Xili Street, Nanshan District, Shenzhen City, Guangdong Province, China 518000

Applicant after: Shenzhen Iridium Plus Technology Co.,Ltd.

Country or region after: China

Applicant after: Shenzhen Yingu Jianke Network Co.,Ltd.

Address before: 243000 2, 1669 north section of Huo Li Shan Road, Ma'anshan high tech Zone, Anhui

Applicant before: Yirui Optoelectronic Technology (Anhui) Co.,Ltd.

Country or region before: China

Applicant before: SUZHOU YIRUI OPTOELECTRONICS TECHNOLOGY Co.,Ltd.

TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20241113

Address after: 472A, North Science Building, No. 59 Gaoxin South 9th Road, Gaoxin Community, Yuehai Street, Nanshan District, Shenzhen City, Guangdong Province 518000

Applicant after: Shenzhen Juli Xinchuang Investment Enterprise (Limited Partnership)

Country or region after: China

Address before: 518, Tsinghua Information Port Research Building, No. 13 Langshan Road, Songpingshan Community, Xili Street, Nanshan District, Shenzhen City, Guangdong Province, China 518000

Applicant before: Shenzhen Iridium Plus Technology Co.,Ltd.

Country or region before: China

Applicant before: Shenzhen Yingu Jianke Network Co.,Ltd.