CN111323076A - Detection device and process chamber detection method - Google Patents
Detection device and process chamber detection method Download PDFInfo
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- CN111323076A CN111323076A CN201911259479.XA CN201911259479A CN111323076A CN 111323076 A CN111323076 A CN 111323076A CN 201911259479 A CN201911259479 A CN 201911259479A CN 111323076 A CN111323076 A CN 111323076A
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- 238000000034 method Methods 0.000 title claims abstract description 111
- 238000001514 detection method Methods 0.000 title claims abstract description 96
- 238000012545 processing Methods 0.000 claims abstract description 35
- 238000012546 transfer Methods 0.000 claims description 20
- 238000004891 communication Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000013049 sediment Substances 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims 4
- 238000012423 maintenance Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 28
- 230000007246 mechanism Effects 0.000 description 12
- 238000007689 inspection Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A detection device is used for detecting a process chamber of processing equipment for carrying out process treatment on a wafer and comprises a bearing piece and a sensor assembly, wherein the sensor assembly is formed on the bearing piece, the sensor assembly is conveyed into the process chamber and detects the process chamber in a detection period, the detection period comprises the time when the bearing piece is positioned in the process chamber, a detection result represents the state of the process chamber, the sensor assembly comprises at least one image sensor and a temperature sensor, and the image sensor and the temperature sensor are respectively positioned on two surfaces of the bearing piece, which are deviated from each other. The detection device provided by the invention can enable technicians to master the state of the process chamber in time, simplify the detection process and reduce the maintenance cost of the treatment equipment. The invention also provides a detection method of the process chamber.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a detection device and a process chamber detection method.
Background
Particle contamination is a major concern in the processing of wafers by processing equipment. Such contamination typically occurs during one or more runs in which wafers are processed by the processing equipment. For example, a processing tool may include at least one chamber and tool front and back end modules, the actuation or operation of either of which may generate metallic or non-metallic particles, such as aluminum, stainless steel, zirconium, or other particles that may cause contamination. These contaminant particles may partially fall onto the wafer and partially deposit in the processing equipment. When excessive contaminant particles are deposited in the processing equipment, anomalies may occur, resulting in poor processing of the processed wafers. In particular, it has been found in practice that process chambers of processing equipment are most susceptible to deposition of contaminating particles.
Therefore, the processing equipment needs to be regularly maintained. However, most chambers or modules of the processing apparatus are in a vacuum state or filled with a processing gas during operation, and the gas environment thereof is not in agreement with the atmospheric environment. If the chamber or module is to be maintained, it is necessary to first switch the chamber to the atmosphere, then open the chamber, and detect whether the chamber is in a state unsuitable for processing wafers, such as too many contaminant particles, so as to clean or eliminate the undesirable factors. Therefore, the process of maintaining the treatment equipment is long, and the cost is high. Also, unless a faulty wafer has been processed, the processing equipment is in a bad state before inspection, which is not clear to the skilled person.
Disclosure of Invention
In view of the above, the present invention provides a detection apparatus and a detection method for a process chamber, which solve the above problems.
A detection device is used for detecting a process chamber of processing equipment for carrying out process treatment on a wafer, and comprises a bearing piece and a sensor assembly, wherein the sensor assembly is formed on the bearing piece, the sensor assembly is conveyed into the process chamber and detects the process chamber in a detection period, the detection period comprises the time when the bearing piece is positioned in the process chamber, the detection result represents the state of the process chamber, the sensor assembly comprises at least one image sensor and at least one temperature sensor, and the image sensor and the temperature sensor are respectively positioned on two surfaces of the bearing piece, which are deviated from each other.
A process chamber detection method for detecting a state of a process chamber of a processing apparatus, the detection method using a detection device including a carrier and a sensor assembly formed on the carrier, the process chamber detection method comprising:
a transmission step: providing the detection device and transferring the detection device into the process chamber of the processing apparatus;
a sensing step: and detecting the process chamber by using the sensor assembly, wherein the detection result represents the state of the process chamber.
Compared with the prior art, the detection device provided by the invention does not need to restore the process chamber to the atmospheric pressure and start the process chamber for detection, the detection device is transmitted into the process chamber in the detection period to detect the process chamber, and at least can acquire the image and the temperature of the process chamber and represent the state of the process chamber so as to analyze whether the process chamber needs to be maintained, so that a technician can timely master the state of the process chamber, the detection process is simplified, and the maintenance cost of the processing equipment is reduced.
Drawings
Fig. 1 is a schematic perspective view of a detection apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic perspective view of the detecting device shown in fig. 1 from another angle.
Fig. 3 is a schematic perspective view of a processing apparatus for application of the detection device shown in fig. 1.
Fig. 4 is a schematic cross-sectional view of the detection device located in the process chamber of the processing apparatus shown in fig. 3.
FIG. 5 is a flow chart of a process chamber detection method according to an embodiment of the invention.
Description of the main elements
Sensor assembly 20
Positioning member 414
Device front-end and back-end modules 440
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that when an element or component is referred to as being "connected" to another element or component, it can be directly connected to the other element or component or intervening elements or components may also be present. When an element or component is referred to as being "disposed on" another element or component, it can be directly on the other element or component or intervening elements or components may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1 to 3, an embodiment of the invention provides a detection apparatus 100 for detecting a process chamber 410 of a processing tool 400. The processing apparatus 400 is used for performing a process on a wafer (not shown). The detecting device 100 includes a carrier 10 and a sensor assembly 20. The sensor assembly 20 is formed on the carrier 10. The sensor assembly 20 performs measurements of the process chamber 410, the measurements being indicative of the state of the process chamber 410. The conditions of the process chamber 410 include at least one of, or any combination of: the temperature of a positioning piece for bearing a wafer, the sediment condition in the process chamber and the positioning accuracy of the wafer.
The processing tool 400 includes at least one process chamber 410, at least one load lock chamber 420, a central transfer mechanism 430, and tool front-end modules 440. The load lock chamber 420 is located between the equipment front-end module 440 and the central transfer mechanism 430. The equipment front-end module 440 includes a robot (not shown) for transferring the wafers to the load lock chamber 420. The central transfer mechanism 430 includes a robot (not shown) for sequentially transferring and positioning the wafers between the load lock chamber 420 and the process chamber 410. It should be noted that, in fig. 3, the device front-end module 440 is drawn as transparent for better representation of the components, but actually has a solid structure.
The carrier 10 is plate-shaped and includes a first surface 11 and a second surface 12. In some embodiments, the carrier 10 is the same shape as the wafers to facilitate the transfer and positioning of the inspection device 100 between the load lock chamber 420 and the process chamber 410 by the robot. In some embodiments, the carrier 10 further comprises indentations to facilitate positioning the detection device 100 within the load lock chamber 420 or within the process chamber 410.
The sensor assembly 20 includes at least one image sensor 21, at least one temperature sensor 22. In some embodiments, the temperature sensor 22 may be a thermocouple temperature sensor. The detection device further comprises at least one light source 30. In some embodiments, the light source 30 may be a light emitting diode.
In some embodiments, at least one of the light sources 30 and at least one of the image sensors 21 are located on the first surface 11 of the carrier 10, and at least one of the temperature sensors 22 is located on the second surface 12 of the carrier 10. In some embodiments, at least one image sensor 21, at least one temperature sensor 22 and at least one light source 30 are disposed on the first surface 11, and at least one image sensor 21 and at least one light source 30 are disposed on the second surface 12. In some embodiments, the sensor assembly 20 and the light source 30 are directly integrated on the carrier 10 through a semiconductor process. In some embodiments, the material of the carrier 10 may include silicon, gallium nitride, gallium arsenide, phosphorous indium, or carbon silicide.
Before describing the method of using the inspection apparatus 100, a transmission path of the wafer in the processing equipment 400 is described as follows: after the robot of the front end module 440 transfers the wafer to the load lock chamber 420 for environmental conversion, the load lock chamber 420 transfers the wafer to the central transfer mechanism 430, and the robot of the central transfer mechanism 430 transfers the wafer to the process chamber 410 and positions the wafer in the process chamber 410; after the processing in the process chamber 410 is completed, the robot arm of the central transfer mechanism 430 transfers the wafer to the load lock chamber 420 for environmental conversion, and then transfers the wafer to the front end module 440.
In some embodiments, the inspection apparatus 100 may be used by transferring the inspection apparatus 100 along the wafer transfer path to the load lock chamber 420 via the robot of the front end module 440 for environmental conversion, transferring the inspection apparatus 100 from the load lock chamber 420 to the central transfer mechanism 430, transferring the inspection apparatus 100 from the robot of the central transfer mechanism 430 to the process chamber 410 and positioning the inspection apparatus in the process chamber 410; after the inspection within the process chamber 410 is completed, the robot of the central transfer mechanism 430 transfers the inspection apparatus 100 to the load lock chamber 420 for environmental conversion, and then transfers the inspection apparatus 100 to the front end module 440.
Referring to fig. 4, fig. 4 is a cross-sectional view of the process chamber 410. It should be noted that those skilled in the art will appreciate that not all necessary functional elements are depicted in the drawings. The process chamber 410 includes a top wall 411, a bottom wall 412, and side walls 413. The top wall 411 is disposed opposite to the bottom wall 412. The side wall 413 has one end connected to the top wall 411 and the other end connected to the bottom wall 412 to form a sealed space. A positioning member 414 for supporting the wafer is disposed on the bottom wall 412. A temperature control mechanism 415 is disposed in the positioning member 414 and is used for controlling the temperature of the wafer on the positioning member 414. An upper electrode 416 is disposed on the top wall 411.
The detection apparatus 100 may set a detection period. During the detection period, the sensor assembly detects at least the process chamber 410.
In some embodiments, the detection period comprises a time when the carrier 10 is disposed within the process chamber 410. When the detection apparatus 100 is transferred into the process chamber 410 and positioned in the process chamber 410 by the robot arm, the carrier 10 is positioned to the positioning member 414 by the robot arm, the second surface 12 of the carrier 10 faces away from the positioning member 414, and the first surface 11 faces toward the positioning member 414. The image sensor 21 on the second surface 12 of the carrier 10 is used for acquiring images or images of the top wall 411, the side wall 413 and the upper electrode 416 of the process chamber 410, analyzing the deposition conditions of the top wall 411, the side wall 413 and the upper electrode 416 of the process chamber 410, and analyzing the positioning accuracy of the carrier 10 positioned to the positioning element 414 by the robot. When the detection apparatus 100 is transferred into the process chamber 410 and positioned in the process chamber 410 by the robot, the image sensor 21 on the first surface 11 of the carrier 10 is used to acquire images or images of the bottom wall 412, the side wall 413 and the positioning member 414 of the process chamber 410, analyze the deposition conditions of the bottom wall 412, the side wall 413 and the positioning member 414 of the process chamber 410, and analyze the positioning accuracy of the carrier 10 positioned to the positioning member 414 by the robot. Since the process chamber 410 is a sealed space, the light source 30 is used to provide light to the image sensor 21 when the light is insufficient, so as to obtain a clearer image or video. In various processes of the wafer, temperature control of the wafer is one of the important indicators affecting the process yield, and the temperature sensor 22 is used for sensing the temperature of the positioning member 414 to analyze whether the positioning member 414 of the process chamber 410 can control the temperature of the wafer within a desired range.
In some embodiments, the detection period comprises a transport time when the carrier 10 is sent to the process chamber 410 and a time when the carrier 10 is disposed within the process chamber 410. During the transport time that the carrier 10 is being sent to the process chamber 410, the carrier 10 passes through the equipment front end module 440, the load lock chamber 420, and the central transport mechanism 430. The image sensor 21 is used to acquire images or video of each chamber (or module) along a path for analyzing whether maintenance is required. The light source 30 is used to provide illumination when there is insufficient light.
In some embodiments, the detection period includes all times that the detection device 100 is on.
The detection device 100 of the present invention does not need to restore the process chamber 410 to atmospheric pressure and perform detection after being opened, the detection device 100 is transmitted into the process chamber 410 during a detection period to detect the process chamber 410, and at least can acquire an image and a temperature in the process chamber 410 and characterize the state of the process chamber 410, so as to analyze whether the process chamber 410 needs maintenance, so that a technician can grasp the state of the process chamber 410 in time, simplify a detection process, and reduce the maintenance cost of the processing apparatus 400.
In some embodiments, the detection device 100 further comprises a memory communicatively coupled to the sensor assembly 20 and storing data sensed by the sensor assembly 20. In some embodiments, the memory may be a non-volatile memory, a flash memory, a dynamic random access memory, or a static random access memory.
In some embodiments, the detection apparatus 100 further includes a communication unit, and the detection result is transmitted to the display device of the processing device 400 for displaying the detection result via the communication unit.
In some embodiments, the detection apparatus 100 further comprises a power supply unit for supplying power to the detection apparatus 100. In some embodiments, the power supply unit includes a battery. In some embodiments, the detection device 100 further comprises a power receiving terminal for electrically coupling to a power source. In some embodiments, the power receiving end point is located on the first surface 11 of the carrier 10 of the detection apparatus 100. In some embodiments, the robot arm or the positioning member 414 of the processing apparatus 400 further includes a power supply terminal for electrically coupling with a power receiving terminal of the detection device 100, and the power supply terminal supplies power to the detection device 100 via the power receiving terminal. In some embodiments, the material of the power receiving terminal and the power supplying terminal comprises a metal. In some embodiments, the area of the power receiving terminal for electrically coupling the power supplying terminal is larger than the area of the power supplying terminal for electrically coupling the power receiving terminal, so as to increase the electrical coupling contact area when the positioning of the power receiving terminal and the power supplying terminal is inaccurate.
In some embodiments, the detection apparatus 100 further includes a driving circuit and a control circuit for driving and controlling the image sensor 21, the temperature sensor 22, the light source 30, the memory, the communication unit or the power supply unit.
In some embodiments, the memory, the communication unit, the power supply unit, the control circuit, or the driving circuit is directly integrated on the carrier 10 through a semiconductor process.
Referring to fig. 5, an embodiment of the invention further provides a process chamber detection method for detecting a state of a process chamber of a processing apparatus. The detection method is to use the detection device 100 comprising the bearing member 10 and the sensor assembly 20 provided by the invention to carry out detection.
The process chamber detection method comprises the following steps:
step S101, transmitting: the detection device 100 is provided and the detection device 100 is transferred into the process chamber 410 of the processing apparatus 400.
In some embodiments, the carriers 10 are transported through the equipment front end module 440, the load lock chamber 420, and the central transport mechanism 430 into the process chamber 410 during the transport step.
Step S102, sensing: the sensor assembly 20 is utilized to detect the process chamber 410, and the detection results are indicative of the state of the process chamber 410.
Wherein the state of the process chamber comprises at least one of the following or any combination of the following: the temperature of a positioning piece for bearing a wafer, the sediment condition in the process chamber and the positioning accuracy of the wafer.
In some embodiments, the detection by the detection apparatus 100 may be started in step S101, that is, the detection apparatus 100 is also used to detect the equipment front-end module 440, the load lock chamber 420 and the central transport mechanism 430.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the spirit and scope of the present invention.
Claims (10)
1. A detection device is used for detecting a process chamber of processing equipment for carrying out process treatment on a wafer, and is characterized in that: the detection device comprises a bearing piece and a sensor assembly, wherein the sensor assembly is formed on the bearing piece, the sensor assembly is conveyed into the process chamber and detects the process chamber in a detection period, the detection period comprises the time when the bearing piece is in the process chamber, the detection result represents the state of the process chamber, the sensor assembly comprises at least one image sensor and at least one temperature sensor, and the image sensor and the temperature sensor are respectively positioned on two surfaces of the bearing piece, which are deviated from each other.
2. The detection device of claim 1, wherein: the sensor assembly further comprises an image sensor located on the same side of the carrier as the temperature sensor.
3. A testing device according to claim 1 or 2, wherein: and a light source is arranged on one surface of the bearing piece, on which the image sensor is arranged.
4. A testing device according to claim 3, wherein: the sensor assembly and the light source are directly integrated on the bearing piece through a semiconductor process.
5. A testing device according to claim 1 or 2, wherein: the bearing piece and the wafer are the same in shape.
6. A testing device according to claim 1 or 2, wherein: the detection period further comprises a transfer time for the carrier to be sent to the process chamber.
7. The detection device of claim 1, wherein: the detection device also comprises a memory which is connected with the sensor component in a communication way and stores the data sensed by the sensor component.
8. The detection device of claim 1, wherein: the detection device further comprises a communication unit, and the detection result is transmitted to a display device of the processing device for displaying the detection result through the communication unit.
9. A process chamber detection method for detecting a state of a process chamber of a processing apparatus, comprising: the detection method is used for detecting by using a detection device comprising a bearing part and a sensor component, wherein the sensor component is formed on the bearing part, and the detection method of the process chamber comprises the following steps:
a transmission step: providing the detection device and transferring the detection device into the process chamber of the processing apparatus;
a sensing step: and detecting the process chamber by using the sensor assembly, wherein the detection result represents the state of the process chamber.
10. The process chamber detection method of claim 9, wherein: the state of the process chamber comprises at least one of the following or any combination of the following: the temperature of a positioning piece for bearing a wafer, the sediment condition in the process chamber and the positioning accuracy of the wafer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862778915P | 2018-12-13 | 2018-12-13 | |
| US62/778915 | 2018-12-13 |
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| Publication Number | Publication Date |
|---|---|
| CN111323076A true CN111323076A (en) | 2020-06-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911259479.XA Pending CN111323076A (en) | 2018-12-13 | 2019-12-10 | Detection device and process chamber detection method |
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| CN (1) | CN111323076A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115435752A (en) * | 2022-11-03 | 2022-12-06 | 西安奕斯伟材料科技有限公司 | Level detection device and level detection method |
| WO2023020454A1 (en) * | 2021-08-18 | 2023-02-23 | 北京北方华创微电子装备有限公司 | Semiconductor chamber and semiconductor process device |
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| US20040153279A1 (en) * | 2002-11-04 | 2004-08-05 | Jun Ye | Method and apparatus for monitoring integrated circuit fabrication |
| CN1930660A (en) * | 2004-03-09 | 2007-03-14 | 赛博光学半导体公司 | Wireless substrate-like sensor |
| CN102194730A (en) * | 2010-03-15 | 2011-09-21 | 三星电子株式会社 | Substrate transfer container, gas purge monitoring tool, and semiconductor manufacturing equipment with the same |
| WO2013039280A1 (en) * | 2011-09-16 | 2013-03-21 | You Young Sun | Measurement device for diagnosing semiconductor equipment |
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2019
- 2019-12-10 CN CN201911259479.XA patent/CN111323076A/en active Pending
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| US6553277B1 (en) * | 1999-05-07 | 2003-04-22 | Tokyo Electron Limited | Method and apparatus for vacuum treatment |
| US20040153279A1 (en) * | 2002-11-04 | 2004-08-05 | Jun Ye | Method and apparatus for monitoring integrated circuit fabrication |
| CN1930660A (en) * | 2004-03-09 | 2007-03-14 | 赛博光学半导体公司 | Wireless substrate-like sensor |
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| WO2023020454A1 (en) * | 2021-08-18 | 2023-02-23 | 北京北方华创微电子装备有限公司 | Semiconductor chamber and semiconductor process device |
| CN115435752A (en) * | 2022-11-03 | 2022-12-06 | 西安奕斯伟材料科技有限公司 | Level detection device and level detection method |
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Application publication date: 20200623 |