CN111293584B

CN111293584B - Multilayer multi-region vertical cavity surface emitting laser device

Info

Publication number: CN111293584B
Application number: CN202010106042.9A
Authority: CN
Inventors: 沈志强
Original assignee: Zhejiang Bosheng Photoelectric Technology Co ltd
Current assignee: Zhejiang Bosheng Photoelectric Technology Co ltd
Priority date: 2020-02-20
Filing date: 2020-02-20
Publication date: 2021-04-16
Anticipated expiration: 2040-02-20
Also published as: CN111293584A

Abstract

The application discloses a multilayer multi-region vertical cavity surface emitting laser device, which comprises a vertical cavity surface emitting laser layer, wherein the vertical cavity surface emitting laser layer comprises at least two regions, and each region at least comprises a vertical cavity surface emitting laser; at least two first electrode layers are arranged on the vertical cavity surface emitting laser layer, an insulating layer is arranged between the adjacent first electrode layers, the at least two first electrode layers are divided into connecting electrodes with the same number as the areas by the insulating layer, and the connecting electrodes correspond to the areas one to one; in each region, the first electrode of the vertical cavity surface emitting laser is electrically connected with the corresponding connecting electrode of the region, so that the overall size of the VCSEL array is reduced, and the production cost is reduced.

Description

Multilayer multi-region vertical cavity surface emitting laser device

Technical Field

The invention relates generally to the field of laser technology, and more particularly to a multilayer multi-region vertical cavity surface emitting laser device.

Background

A Vertical-Cavity Surface-Emitting Laser (VCSEL) has a basic structure consisting of an upper DBR (Distributed Bragg Reflector) and a lower DBR (Distributed Bragg Reflector) and an active layer. The upper DBR and the lower DBR form a resonant cavity together with the active layer. The active region is composed of quantum wells, and is used as a core part of the VCSEL to determine important parameters such as threshold gain, lasing wavelength and the like of the VCSEL.

VCSELs are ideal light sources in 3-dimensional sensors that can be arranged in an array that can be illuminated at different times by addressing different regions of the VCSEL at different timings. At present, the VCSELs arranged in an array are located in one layer, and the electrodes connected with the VCSELs are also located in one layer, so that the electrodes are considered to be distributed on one surface, and the electrodes at different positions are isolated by patterning.

Disclosure of Invention

The present application is intended to provide a multi-layer multi-region vertical cavity surface emitting laser device, which can have overlapping regions between different regions in a VCSEL array, and reduce the overall size of the VCSEL array and the production cost when the same number of VCSELs are provided.

The invention provides a multilayer multi-region vertical cavity surface emitting laser device, which comprises a vertical cavity surface emitting laser layer, wherein the vertical cavity surface emitting laser layer comprises at least two regions, and each region at least comprises a vertical cavity surface emitting laser;

at least two first electrode layers are arranged on the vertical cavity surface emitting laser layer, an insulating layer is arranged between the adjacent first electrode layers, the at least two first electrode layers are divided into connecting electrodes with the same number as the areas by the insulating layer, and the connecting electrodes correspond to the areas one to one;

in each of the regions, the first electrode of the vertical cavity surface emitting laser is electrically connected to the corresponding connection electrode of the region.

In an implementable manner, each region is provided with a plurality of said VCSELs, different ones of said regions at least partially overlapping.

As an realizable manner, the first electrode layer includes a plurality of first connection electrodes arranged at intervals;

the second electrode layer is electrically connected with the second electrode layer corresponding to each region, and the second electrode layer comprises a plurality of second connecting electrodes arranged at intervals;

and on the projection perpendicular to the vertical cavity surface emitting laser layer, the first connecting electrode and the second connecting electrode are intersected, and the intersection position is the area.

As an implementation manner, at least one optical structure for changing the light path of the laser emitted by the vertical cavity surface emitting laser is arranged on the light emitting side of each region of the multi-layer multi-region vertical cavity surface emitting laser device.

As an implementable manner, the optical structure is at least one of a grating, a fresnel lens, a convex lens, a concave lens, a convex lens array, and a concave lens array.

In an implementation, the optical structure is a grating, which is a sub-wavelength grating or a diffraction grating.

As an implementation manner, the grating comprises a plurality of grating periods, the grating pitches in the same grating period are the same or different, and the widths of the grating strips are the same or different; and/or the presence of a gas in the gas,

the grating distances in different grating periods are the same or different, and the widths of the grating strips are the same or different.

In an implementation manner, each of the regions includes a plurality of the vertical cavity surface emitting lasers and one of the optical structures, and the optical structure covers optical paths of all the vertical cavity surface emitting lasers in the region where the optical structure is located.

As an implementable manner, each of the regions includes a plurality of the vertical cavity surface emitting lasers, and the plurality of the vertical cavity surface emitting lasers of each region are arranged in a predetermined rule or randomly.

In the above scheme, since the electrode layers corresponding to different regions may be stacked one on another, a via hole penetrating through the lower electrode layer may be formed in a region corresponding to the upper electrode layer, so that the VCSEL belonging to the region corresponding to the upper electrode layer in the region covered by the lower electrode layer is electrically connected to the upper electrode layer, that is, an overlapping region is formed between different regions in the VCSEL array. In addition, since the electrode layers are stacked, it is possible to convert a plurality of electrode regions, which should be laterally extended in the prior art, into a vertically stacked structure, and in the case where the same number of VCSELs are provided, the overall size of the VCSEL array is reduced, and the production cost is reduced.

Drawings

Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:

FIGS. 1-9 are schematic diagrams illustrating a process for fabricating a multi-layered multi-region VCSEL device according to an embodiment of the invention;

FIGS. 10-11 are schematic diagrams of a multi-layered multi-region VCSEL device according to another embodiment of the invention;

FIG. 12 is a schematic view of a multi-layered multi-region VCSEL device according to yet another embodiment of the present invention;

FIG. 13 is a schematic diagram of a multi-layered multi-region VCSEL device according to still another embodiment of the present invention;

FIG. 14 is a schematic diagram of a multi-layered multi-region VCSEL device with ion or proton implantation according to an embodiment of the present invention;

FIG. 15 is a schematic diagram of a multi-layer multi-region VCSEL device using a bottom emission type according to an embodiment of the present invention;

FIG. 16 is a schematic diagram of another multi-layer multi-region VCSEL device using a bottom emission type according to an embodiment of the present invention;

FIG. 17 is a schematic diagram of a random arrangement of multi-layered multi-region VCSEL devices according to an embodiment of the invention;

FIG. 18 is a schematic diagram of a regular arrangement of multi-layered multi-region VCSEL devices according to an embodiment of the invention;

FIG. 19 is a schematic diagram of another multi-layered multi-region VCSEL device according to an embodiment of the invention;

FIG. 20 is a schematic view of another structure of a multi-layered multi-region VCSEL device according to an embodiment of the invention;

FIGS. 21-24 are schematic diagrams illustrating different changes to an optical path after an optical structure is disposed in a multi-layered multi-region VCSEL device according to embodiments of the invention.

Detailed Description

The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.

It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.

FIGS. 1-8 illustrate a multi-layer multi-region VCSEL device including a VCSEL layer including at least two regions each having at least one VCSEL, according to embodiments of the present invention; at least two first electrode layers are arranged on the vertical cavity surface emitting laser layer, an insulating layer is arranged between the adjacent first electrode layers, the at least two first electrode layers are divided into connecting electrodes with the same number as the areas by the insulating layer, and the connecting electrodes correspond to the areas one to one; in each of the regions, the first electrode of the vertical cavity surface emitting laser is electrically connected to the corresponding connection electrode of the region.

The vertical cavity surface emitting laser may be a fixed-emission type vertical cavity surface emitting laser or a bottom-emission type vertical cavity surface emitting laser.

In the example of FIGS. 1-8, the VCSEL layer includes two regions A, B, one disposed in each region, forming two layers of first electrode layers, one electrically connected to the first electrode layer of one of the VCSELs and the other electrically connected to the first electrode layer of the other VCSEL.

The structure of the multi-layer multi-region VCSEL device is described in detail below with reference to a method for manufacturing the same, which is only exemplary and not the only limitation of the present invention.

The "patterning process" as referred to herein includes processes of depositing a film, coating a photoresist, mask exposing, developing, etching, and stripping a photoresist, and is a well-established manufacturing process. The deposition may be performed by a known process such as sputtering, evaporation, chemical vapor deposition, etc., the coating may be performed by a known coating process, and the etching may be performed by a known method, which is not particularly limited herein.

Wherein fig. 1-3 show an epitaxial growth process; FIGS. 4-6 illustrate the formation of VCSEL arrays that may be arranged regularly or randomly; FIGS. 7-8 illustrate the formation of the first electrode layer; as described in detail below.

S1: providing a substrate; the substrate may be a silicon substrate, a sapphire substrate, a gallium arsenide substrate, a diamond substrate, or the like.

S2: forming a first reflector layer 1 on a substrate (not shown in the figure); the first reflector layer 1 may include a stack of two materials of AlGaAs and GaAs, which have different refractive indices; the substrate and the first reflector layer 1 may be both N-type or both P-type. The first Reflector layer 1 may be at least one of a Distributed Bragg Reflector (DBR) layer and a High Contrast Grating (HCG) layer, as shown in fig. 1.

S3: forming an active layer 2 on the first reflector layer 1; the active layer 2 includes at least a multi-quantum well layer formed by stacking GaAs, AlGaAs, GaAsP, and InGaAs materials, and a light emitting layer for converting electric energy into optical energy. Of course, a single quantum well layer may also be employed in place of the multiple quantum well layer in some examples, as shown in fig. 2.

S4: forming a second reflector layer 3 on the active layer 2; the second reflector layer 3 may comprise a stack of two materials of different refractive indices AlGaAs and GaAs, and may be P-type or N-type. When the first reflector layer 1 is of an N type, the second reflector layer 3 is of a P type; accordingly, when the first reflector layer 1 is P-type, the second reflector layer 3 is N-type. The second Reflector layer 3 may be at least one of a Distributed Bragg Reflector (DBR) layer and a High Contrast Grating (HCG) layer, as shown in fig. 3.

S5: forming a first electrode 7 on the second reflector layer 3 through a patterning process, the first electrode 7 may be a positive electrode or a negative electrode of the vertical cavity surface emitting laser; the first electrode can be formed by adopting the modes of electroplating, evaporation, sputtering and the like; in this example, the vertical cavity surface emitting laser is a top emission type vertical cavity surface emitting laser, and the first electrode 7 exposes the laser emission window so that laser light can be emitted from the top as shown in fig. 4.

S6: forming an oxidation trench 4, the oxidation trench 4 extending at least from the second reflector layer 3 to the first reflector layer 1;

s7: forming an oxide layer in the active layer 2 in the oxidation trench 4 by the wet oxidation process, so that the oxide layer forms an oxidation region 5 surrounding an unoxidized region 6 inwards from the oxidation trench; the unoxidized region 6 is used to define a laser exit window of the vcsel, and after the process step is completed, a vcsel array is formed, as shown in fig. 5;

s8: the first insulating layer 8 is formed, and the material of the first insulating layer 8 may be alumina Al₂O₃Inorganic materials such as silicon oxide SiOx, silicon nitride SiNx or silicon oxynitride si (on) x, and the like, and also organic polymer materials such as Benzocyclobutene (BCB), Polyimide (PI), and the like, and the organic polymer materials can provide a larger insulating layer thickness and a low dielectric constant, and the first insulating layer 8 can be a single-layer, double-layer or multi-layer structure, such as a SiNx/SiOx composite film, and has a thickness of 30nm to 5 um; the first insulating layer 8 may be light-transmissive;

s9: coating a layer of photoresist on the first insulating layer 8, exposing and developing the photoresist by adopting a single-tone mask, etching the first insulating layer 8 and stripping the residual photoresist to expose the first electrode 7 from the first insulating layer 8;

s10: a first electrode layer is formed on the first insulating layer 8 by a patterning process, the first electrode layer being divided into two parts insulated from each other, one of which is electrically connected to the first electrode 7 of the vcsel of one of the regions 10 (hereinafter referred to as a first region a for convenience of description) and the other of which is electrically connected to the first electrode 7 of the vcsel of the other region 9 (hereinafter referred to as a second region B for convenience of description), as shown in fig. 7;

s11: forming a second insulating layer 11 on the first electrode layer, wherein the forming process of the second insulating layer 11 may be the same as that of the first insulating layer, and details are not repeated herein, and a via hole 13 is disposed at the second region B, so that the second region B exposes the underlying first electrode layer;

s12: a first electrode layer is formed on the second insulating layer 11 by a patterning process, and the first electrode layer is electrically connected to the portion, labeled with reference numeral 9, of the first electrode layer located in the lower second region B through a via hole 13, so that the upper and lower first electrode layers form a structure connected to the vertical cavity surface emitting lasers in different regions, where an upward arrow in fig. 9 is an emitting direction of laser light.

In this embodiment, two regions of the vcsel are provided, and two first electrode layers are correspondingly provided, the two first electrode layers are separated by an insulating layer into two connection electrodes, one of the connection electrodes is a region denoted by reference numeral 10 in fig. 9, the other of the connection electrodes is a region denoted by reference numerals 9 and 12 in the drawing, and the regions denoted by reference numerals 9 and 12 are electrically connected through a via 13.

According to the scheme, the electrode layers corresponding to different regions can be arranged in a mutually-stacked mode, so that the region corresponding to the electrode layer on the upper layer is provided with the through hole penetrating through the electrode layer on the lower layer, the VCSEL of the region corresponding to the electrode layer on the upper layer in the region covered by the electrode layer on the lower layer is electrically connected with the electrode layer on the upper layer, and the different regions in the VCSEL array are overlapped. In addition, since the electrode layers are stacked, it is possible to convert a plurality of electrode regions, which should be laterally extended in the prior art, into a vertically stacked structure, and in the case where the same number of VCSELs are provided, the overall size of the VCSEL array is reduced, and the production cost is reduced.

As another implementation, as shown in fig. 10 and 11, it is different from the above-described embodiment mainly in the formation of each first electrode layer.

In this embodiment, the first electrode layer 10 may be formed only in the range of the first region a, then the second insulating layer 11 may be formed only on the first electrode layer 10, and then the second electrode layer 12 may be formed on the second insulating layer 11 and the first insulating layer 8 of the second region B, so that the first electrode layer 10 is electrically connected to the first electrode 7 of the vcsel located in the first region a, and the second electrode layer 12 is electrically connected to the first electrode 7 of the vcsel located in the second region B.

As shown in fig. 12 and 13, the two regions are expanded, and the difference from the above embodiment is mainly that three regions A, B, C are provided in the example of fig. 12 and 13, and the three regions are electrically connected to the first electrode 7 of the vertical cavity surface emitting laser by three mutually insulated first electrode layers 10, 12, and 15.

As an implementable manner, each region is provided with a plurality of vertical cavity surface emitting lasers, the different regions at least partially overlapping. The region referred to herein may be, but is not limited to, a range surrounded by the connecting lines of several facet emitting lasers located at the outermost layer among the designated plurality of facet emitting lasers for simultaneous light emission.

As shown in fig. 17, the vertical cavity surface emitting lasers 16 in each region are randomly arranged, and three regions (different filling of the vertical cavity surface emitting lasers is used for distinguishing) are shown, the first electrode layers corresponding to the three regions are a, b, and c, respectively, and the vertical cavity surface emitting lasers in the three regions are randomly arranged, so that one or more of the regions are located in the other region because of the overlapping positions, and the regions are overlapped with each other.

Of course, as shown in fig. 18, the vertical cavity surface emitting lasers in each region may be arranged according to a predetermined rule, such as a matrix arrangement, in which a layer-by-layer matrix arrangement structure is formed, which shows three regions (distinguished by different filling of the vertical cavity surface emitting lasers), where the first electrode layers corresponding to the three regions are a, b, and c, respectively, for example, the first region is surrounded by the second region, and the second region is surrounded by the third region.

As another implementation, as shown in fig. 19, the first electrode layer includes a plurality of first connection electrodes 20 disposed at intervals; the second electrode layer is electrically connected with the second electrode layer corresponding to the region in each region, and comprises a plurality of second connecting electrodes 21 arranged at intervals; the first connection electrode 20 intersects the second connection electrode 21 on a projection perpendicular to the vertical cavity surface emitting laser layer, and the intersecting position is the above-described region.

As a preferred implementation, the first and

second connection electrodes

20 and 21 may be perpendicular to each other, and the vertical cavity surface emitting lasers 16 of the corresponding regions may be caused to emit light by row scanning and column scanning.

Wherein the number of vertical cavity surface emitting lasers per region can be set as desired. As shown in fig. 14, 1 vertical cavity surface emitting laser is provided per region, and as shown in fig. 20, a plurality of vertical cavity surface emitting lasers 16 are provided per region. Of course, the structure of the multi-layered multi-region VCSEL device in the above-described embodiment may also be adopted here corresponding to each region, except that the region subdivided at the intersection of the first connection electrode and the second connection electrode may be referred to as a plurality of sub-regions, which is to be understood as nesting one small multi-layered multi-region VCSEL device in the multi-layered multi-region VCSEL device.

Through setting up crossing first connecting electrode 20 and second connecting electrode 21 for M first connecting electrode + N second connecting electrode, just can independently scan M N region, for example, 4 first connecting electrodes and 4 second connecting electrodes, just so can independently scan 16 regions, can reduce the required area of connecting electrode greatly like this, thereby reduce mould size and cost.

The multi-layer multi-region VCSEL device in the above example employs a top emission type VCSEL, and laser light emitted from the VCSEL is emitted through the first electrode layer, in which case the material of the first electrode layer is, for example, but not limited to, Indium Tin Oxide (ITO).

In each of the above examples, the electrically isolated region 14 may be formed by ion or proton implantation, as shown in fig. 14, to limit the current of the vertical cavity surface emitting laser.

As shown in fig. 15 and 16, the multi-layer multi-region vcsel device may also employ a bottom emission vcsel, and when the bottom emission vcsel is employed, the first electrode 7 shown in fig. 15 and 16 may cover a laser emission window region of the vcsel defined by the non-oxidized region 6. In fig. 15, two regions of vertical cavity surface emitting lasers are provided, each region having one vertical cavity surface emitting laser, and two layers of first electrode layers are provided correspondingly, the two layers of first electrode layers are divided into two left and right portions of connecting

electrodes

10, 12 by an insulating layer, and the two connecting

electrodes

10, 12 are connected to the vertical cavity surface emitting lasers in one-to-one correspondence, respectively. In fig. 16, a vertical cavity surface emitting laser is provided with three regions, each region having one vertical cavity surface emitting laser, and correspondingly three first electrode layers are provided, the three first electrode layers are divided into three left and right middle portions of

connection electrodes

10, 12, and 15 by two insulating layers, and the three

connection electrodes

10, 12, and 15 are connected to the vertical cavity surface emitting lasers in a one-to-one correspondence.

21-24, at least one optical structure 31 for changing the optical path of the laser light emitted from the VCSEL is disposed on the light emitting side of each region of the multi-layer multi-region VCSEL device.

As an implementable manner, the optical structure 31 is at least one of a grating, a fresnel lens, a convex lens, a concave lens, a convex lens array, and a concave lens array. Of course, the present invention is not limited to the examples, and any optical structure may be used as long as the propagation path of the laser light is changed as necessary. According to different arranged optical structures, the multi-layer multi-region vertical cavity surface emitting laser device can collimate or disperse laser light and the like, and correspondingly, the multi-layer multi-region vertical cavity surface emitting laser device can be used as a collimator, a transmitter and the like.

One kind of optical structure 31 described above may be provided for one region, and the optical structures 31 provided for the respective regions may be the same or different. Each region includes a plurality of vcsels 16 and one of the optical structures 31, where the optical structure 31 covers the optical paths of all vcsels 16 in the region in which it is located. As in fig. 21, there are two vcsels 16 in 1 region, and one of the optical structures 31 in that region covers both vcsels 16; as in fig. 23, 1 region has one vcsel, then one of the above-described optical structures 31 of that region covers the one vcsel 16.

If homogeneous, the parameters of the optical structures 31 may be the same or different for different regions. For example, only by setting the grating, the grating can be processed by laser etching, and gratings with different grating pitches and different grating widths, that is, gratings with different parameters, are manufactured by controlling the energy, spot size and irradiation time of laser, so that the ranges (included angles) or directions of the laser emitted from different areas are different. As shown in fig. 21, the ranges (included angles) 32 of the laser light emitted from the different regions are different. As shown in fig. 22, the directions of the laser light emitted from different regions are different, one region corresponds to one vertical cavity surface emitting laser 16 and one optical structure 31 in fig. 23, and one region corresponds to two vertical cavity surface emitting lasers 16 and one optical structure 31 in fig. 21. In the figure, the arrows indicate the direction of laser emission.

In addition, the above-described various optical structures may be provided corresponding to the same region, for example, a grating may be provided corresponding to a partial region of the vertical cavity surface emitting laser, a portion may be provided with a convex lens array, and another portion may be provided with a fresnel lens. And the same area can also be provided with the same optical structure with different parameters, for example, a plurality of gratings with different periods and other parameters are arranged in the same area, so that the light rays at different positions in the same area are deflected at different angles, and in a far field mode, the light intensity of one part of the position is enhanced, while the adjacent area is weakened or even has no light intensity. The region where the light intensity is intensified may be a region where light rays of different regions are diffraction-superposed together. As shown in fig. 24, by providing different kinds of optical structures 31, different display patterns can be obtained.

For example, the number of diffraction orders emitted from the exit surface of the multi-layer multi-region vertical cavity surface emitting laser device is determined by selecting the period of the grating, for example, the grating is one period, light spots of one diffraction order are obtained in a far field mode, the grating is a plurality of periods, light spots of a plurality of diffraction orders are obtained in the far field mode, the number of the light spots of the plurality of diffraction orders is less than or equal to the number of the periods of the grating, the diffraction angle of the grating is determined by the period of the grating, and the larger the period is, the smaller the angle interval of diffraction is.

The grating may be, but is not limited to, a sub-wavelength grating or a diffraction grating.

For one grating, the grating can comprise a plurality of grating periods, the grating distances in the same grating period are the same or different, and the widths of the grating strips are the same or different; for example, in the same grating period, the grating pitches are the same, and the widths of the bars are the same, or in the same grating period, the grating pitches are the same, and the widths of the bars are different, or in the same grating period, the grating pitches are different, and the widths of the bars are the same, or in the same grating period, the grating pitches are different, and the widths of the bars are also different. The change effect of the grating on the laser light path can be changed by changing the grating distances and the widths of the grating strips.

By changing the grating pitch and the width of the grating bars in the grating period, the amplitude level of the grating for laser amplitude modulation can be changed.

For different grating periods, the grating pitches of the different grating periods are the same, and the widths of the grating strips are different; or the grating pitches of different grating periods are different and the widths of the grating strips are different, or the grating pitches of different grating periods are different and the widths of the grating strips are the same, or the grating pitches of different grating periods are different and the widths of the grating strips are also different.

It will be understood that any reference to the above orientation or positional relationship as indicated by the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," etc., is intended to be based on the orientation or positional relationship shown in the drawings and is for convenience in describing and simplifying the invention, and does not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be considered as limiting. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by those skilled in the art that the scope of the invention herein disclosed is not limited to the particular combination of features described above, but also encompasses other arrangements formed by any combination of the above features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.

Claims

1. A multilayer multi-region VCSEL device comprising a VCSEL layer including at least two regions each having at least one VCSEL;

in each region, the first electrode of the vertical cavity surface emitting laser is electrically connected with the corresponding connecting electrode of the region; the electrode layers corresponding to different regions are mutually stacked, so that a via hole penetrating through the electrode layer of the lower layer is formed in the region corresponding to the electrode layer of the upper layer, and the VCSEL of the region corresponding to the electrode layer of the upper layer in the region covered by the electrode layer of the lower layer is electrically connected with the electrode layer of the upper layer.

2. The multi-layer multi-region VCSEL device of claim 1, wherein each region is provided with a plurality of the VCSELs, different ones of the regions at least partially overlapping.

3. The multi-layer multi-region vertical cavity surface emitting laser device of claim 1, wherein the first electrode layer includes a plurality of first connection electrodes arranged at intervals;

4. The multi-layer multi-region VCSEL device of any of claims 1-3, wherein at least one optical structure for changing an optical path of laser light emitted from the VCSEL is disposed on a light emitting side of each region of the multi-layer multi-region VCSEL device.

5. The multi-layered multi-region VCSEL device of claim 4, wherein the optical structure is at least one of a grating, a Fresnel lens, a convex lens, a concave lens, a convex lens array, and a concave lens array.

6. The multi-layer multi-region VCSEL device of claim 4, wherein the optical structure is a grating that is a sub-wavelength grating or a diffraction grating.

7. The multi-layer multi-region VCSEL device of claim 6, wherein the grating includes a plurality of grating periods, a pitch of the grating periods are the same or different, and widths of the grating bars are the same or different; and/or the presence of a gas in the gas,

8. The multi-layer multi-region VCSEL device of any of claims 1-3, wherein each of the regions includes a plurality of the VCSELs and an optical structure covering an optical path of all of the VCSELs in the region where the optical structure is located.

9. The multi-layer multi-region VCSEL device of any of claims 1-3, wherein each of the regions includes a plurality of the VCSELs, and the plurality of the VCSELs of each region are arranged in a predetermined rule or randomly.