[go: up one dir, main page]

CN111293106B - Shielding cover, electromagnetic shielding packaging structure and manufacturing method thereof - Google Patents

Shielding cover, electromagnetic shielding packaging structure and manufacturing method thereof Download PDF

Info

Publication number
CN111293106B
CN111293106B CN202010105679.6A CN202010105679A CN111293106B CN 111293106 B CN111293106 B CN 111293106B CN 202010105679 A CN202010105679 A CN 202010105679A CN 111293106 B CN111293106 B CN 111293106B
Authority
CN
China
Prior art keywords
conductive
integrated circuit
circuit device
movable body
shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010105679.6A
Other languages
Chinese (zh)
Other versions
CN111293106A (en
Inventor
徐玉鹏
钟磊
李利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forehope Electronic Ningbo Co Ltd
Original Assignee
Forehope Electronic Ningbo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forehope Electronic Ningbo Co Ltd filed Critical Forehope Electronic Ningbo Co Ltd
Priority to CN202010105679.6A priority Critical patent/CN111293106B/en
Publication of CN111293106A publication Critical patent/CN111293106A/en
Application granted granted Critical
Publication of CN111293106B publication Critical patent/CN111293106B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

A shielding case, an electromagnetic shielding packaging structure and a manufacturing method thereof belong to the field of semiconductor packaging. The shielding cover comprises a switching layer, a cover body and a movable body. The shield can be used for packaging an integrated circuit device inside, so that non-welding point contact fixing is realized, and meanwhile, the electromagnetic shielding effect is excellent.

Description

Shielding cover, electromagnetic shielding packaging structure and manufacturing method thereof
Technical Field
The application relates to the field of semiconductor packaging, in particular to a shielding case, an electromagnetic shielding packaging structure and a manufacturing method thereof.
Background
Electromagnetic shielding structures of Single in-line packages (SIP) and Ball Grid Array (BGA) are widely used in the semiconductor industry. With the rapid development of the semiconductor industry, the integrated circuit packaging technology has a great influence on the product functions, and thus the requirements of the industry are more and more strict.
In the field of communications, Integrated Circuit (IC) electronic products operating at high frequency signals exceeding 100MHz need to be equipped with electromagnetic shielding structures to prevent electromagnetic interference between various chips and components.
Disclosure of Invention
The application provides a shielding case, an electromagnetic shielding packaging structure and a manufacturing method thereof, which are used for partially or completely improving and even solving the problems of low yield and poor quality of packaged products in the existing electromagnetic packaging process.
The application is realized as follows:
in a first aspect, examples of the present application provide a shielding can for electromagnetic shielding in an integrated circuit package.
The shield cover comprises a plate-shaped switching layer, a cover body, a movable body and an extrusion piece.
The transfer layer is provided with a first surface and a second surface which are opposite, the thickness direction from the first surface to the second surface is defined by the transfer layer, the first surface of the transfer layer is provided with a conductive part, the second surface is provided with a welding part, and the welding part is electrically connected with the conductive part.
Wherein the cover body surrounds the periphery of the adapter layer to jointly limit the accommodating cavity through the inner wall and the first surface, and the cover body is provided with an opening communicated with the accommodating cavity.
Wherein the movable body can be operated to selectively cover or expose the opening.
Wherein the pressing member is connected to the movable body, and the pressing member is configured to move with the movable body so as to be displaced into the accommodation cavity to generate a pressing action toward the first surface in a process of the movable body being changed from the exposure opening state to the covering opening state.
In a first possible embodiment of the first aspect of the present application in combination with the first aspect, the extrusion is curved.
Optionally, the extrusion has an outer surface that is rounded.
With reference to the first embodiment of the first aspect, in a second possible implementation manner of the first aspect of the present application, the number of the pressing members is plural and is dispersed throughout the movable body.
With reference to the first aspect or the first or second implementation manner of the first aspect, in a third possible implementation manner of the first aspect of the present application, the solder portion is a solder ball, or may also be a solder ball.
And/or the conductive part is composed of one end part of the lead electrically connected with the welding part.
With reference to the first aspect, in a fourth possible implementation manner of the first aspect of the present application, the interposer defines a thickness direction from the first surface to the second surface, and the interposer is provided with a groove extending from the first surface by a predetermined depth along the thickness direction. The conductive part is arranged in the groove. The shield can includes conductive contacts. The conductive contact point protrudes from the groove and can be compressed in the thickness direction to be in electrical contact with the conductive portion.
Optionally, the conductive contact point is resilient.
With reference to the first aspect or the fourth embodiment of the first aspect, in a fifth possible implementation of the first aspect of the present application, the interposer is provided with a defining groove extending from the first surface by a given depth in a thickness direction, and the defining groove is not coincident with the groove. The shield case includes a supporting contact point that protrudes from the inside of the defining groove and is capable of being compressed in the thickness direction.
Optionally, the supporting contact point is resilient.
In a second aspect, examples of the present application provide an electromagnetic shielding package structure.
The electromagnetic shielding package structure comprises a shielding cover and an integrated circuit device with pins.
The integrated circuit device is left in the accommodating cavity of the shielding case. Meanwhile, the movable body of the shielding case is in a state of covering the opening, so that the pins of the integrated circuit device are directly or indirectly in conductive contact and abut against the conductive part by extruding the extrusion piece, and the integrated circuit device is fixed and encapsulated in the shielding case.
With reference to the second aspect, in a first possible implementation manner of the second aspect of the present application, the pin of the integrated circuit device indirectly electrically contacts and abuts against the conductive portion, and the conductive contact is disposed between the pin and the conductive portion. The support contacts are located between the integrated circuit device and the interposer.
In a third aspect, the present application provides a method of manufacturing the above electromagnetic shielding package structure, which includes the following steps.
An integrated circuit device is provided.
The integrated circuit device is placed in the accommodating cavity of the cover body through the opening of the shielding cover in the exposed state, so that the pins of the integrated circuit device are aligned with the conductive parts.
The movable body of the shield case is operated to make the opening in a closed state, and the pin is abutted against the integrated circuit device through the extrusion piece so as to make direct or indirect conductive contact with the conductive part.
With reference to the third aspect, in a first possible implementation manner of the third aspect of the present application, the step of placing the integrated circuit device in the receiving cavity of the cover body so that the pins of the integrated circuit device are aligned with the conductive parts in the grooves includes the following steps.
The integrated circuit device is placed on the conductive contact points and the support contact points of the transfer layer, so that part of pins of the integrated circuit device are in contact with the conductive contact points, and the rest pins of the integrated circuit device are aligned with the support contact points.
Wherein the conductive contact is at least partially located in the groove of the interposer layer and the support contact is at least partially located in the limiting groove of the interposer layer.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the prior art of the present application, the drawings used in the description of the embodiments or the prior art will be briefly described below.
Fig. 1 shows a schematic cross-sectional view of an electromagnetic shielding structure based on a SIP module implemented by the inventor;
fig. 2 is a schematic cross-sectional structural diagram of a first shielding case provided by an embodiment of the present application;
FIG. 3 is a schematic view of the first shield of FIG. 2 from another perspective;
fig. 4 is a schematic cross-sectional structural diagram of a second shielding case provided by the embodiment of the present application;
fig. 5 shows an electromagnetic shielding package structure based on the shielding can of fig. 2;
fig. 6 shows an electromagnetic shielding package structure based on the shielding can of fig. 4;
fig. 7 illustrates an electromagnetically shielded package structure of a SIP packaged integrated circuit device in combination with a BGA package shield can.
Icon: 100-SIP module electromagnetic shielding structure; 101-a substrate; 102-a chip; 103-metal lines; 104-a plastic package body; 105-a sputtered layer of metal; 106-solder ball; 200-a shield can; 201-a transition layer; 2011-first surface; 2012-a conductive portion; 2013-a second surface; 2014-weld; 202-a cover body; 203-a movable body; 204-extrusion; 205-a receiving cavity; 301-grooves; 302-defining a slot; 303-conductive contact points; 304-supporting contact points; 400-a first electromagnetic shielding package structure; 401-integrated circuit device; 402-chip; 500-second electromagnetic shielding package structure.
Detailed Description
Embodiments of the present application will be described in detail below with reference to examples, but those skilled in the art will appreciate that the following examples are only illustrative of the present application and should not be construed as limiting the scope of the present application. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The electromagnetic interference of electronic equipment is always one of the key factors which restrict the integration level and the cooperative operation of electronic components. Since BGA electromagnetic shielding packaging technology is very suitable for high-density, high-performance, multi-pin packaging, most high-pin-count chips (such as graphic chips and chip sets, etc.) today use BGA electromagnetic packaging technology. For research, the inventor has implemented an electromagnetic shielding structure based on a SIP module and a BGA package (hereinafter referred to as SIP electromagnetic shielding structure), please refer to fig. 1. Fig. 1 shows a schematic cross-sectional view of the electromagnetic shielding structure of the SIP module.
The SIP module electromagnetic shielding structure 100 includes a substrate 101, a chip 102, a wire 103, a molding compound 104, a metal sputtering layer 105, and solder balls 106.
The manufacturing method of the SIP module electromagnetic shielding structure 100 can be briefly described as follows. The manufacturing method sequentially comprises the steps of substrate-chip bonding-routing-packaging-cutting-film bonding and jig-laser cutting-mounting-metal sputtering-film removing, and is specifically described as follows.
1. Substrate: the substrate is manufactured by a substrate factory, and finished products can be directly selected.
2. Chip pasting and routing: and finishing the chip mounting and routing processes on the surface of the substrate.
3. And (3) encapsulation: and the connected chip circuits are plastically packaged by using a plastic packaging material to play a role in protection.
4. Cutting: and cutting the product into single pieces by using a machine.
5. Film pasting: and sticking the back solder balls of the BGA product to be protected on the jig by using the protective film.
6. Laser grooving: and (4) utilizing a laser machine to laser the protective film to form a groove.
7. Mounting: a machine is used for mounting a single BGA product and placing the BGA product in the groove of the protective film.
8. Metal sputtering: and performing metal sputtering on the protected BGA product by using a metal sputtering process.
9. Removing the film: and separating the BGA product after the metal sputtering is finished from the protective film by using a machine table, and finishing the final BGA metal sputtering product after the separation.
In the process, the electromagnetic shielding operation is carried out after the packaging process of the BGA single product is completed. The back solder ball of the BGA single product is protected by a protective film. The specific scheme is as follows: the protection film is firstly dug out of a groove in a laser grooving mode, and then a BGA product is placed on the protection film groove. The BGA back solder ball is protected by the depth and the size of the groove of the protective film, so that the back solder ball is prevented from being polluted by metal in the metal sputtering process. The metal sputtering process adopts a single product to be placed on a jig for metal sputtering.
In practice, the inventors have found that one of the problems of the above process is: after the sputtering is finished, when the BGA single product is separated from the protective film, the problems of residual solder balls on the back surface of the BGA product and the like generally exist.
In addition, when the SIP module performs BGA electromagnetic shielding operation by the above process, the following problems may also occur:
1. because the metal sputtering process is adopted, a single product is placed on the jig for metal sputtering, the problems of non-uniform metal sputtering layer and low process efficiency exist, and the electromagnetic shielding performance is reduced.
2. With laser grooving to dig the grooves, the cost increases with the type and purchase of the laser head.
3. The manufacturing method is inconvenient to maintain/replace, and different IC packaging devices cannot be converted into SIP and BGA multi-pin packages.
In view of the above-mentioned practical problems, the inventor creatively proposes a new electromagnetic shielding structure. The electromagnetic shielding structure utilizes the electromagnetic shielding characteristic of the BGA transfer metal box to meet the electromagnetic shielding effect. The shielding method realized by the shielding structure can solve or even replace the traditional SIP-BGA electromagnetic shielding process. The transition metal box is mentioned and explained in detail in the following with the term shielding can, and the electromagnetic shielding structure is also explained and explained again with the electromagnetic shielding encapsulation structure.
The following provides a detailed description of the shielding can, the electromagnetic shielding package structure and the manufacturing method thereof in the embodiments of the present application.
The shield can in the example combines a metal can and an interposer. The interior of the switching Layer is provided with an RDL (Re-Distribution Layer) line, a groove, an elastic contact point and a box contact point according to the design, so that the single product is limited and protected by electromagnetic shielding.
Fig. 2 shows a schematic cross-sectional structure of the shield can 200; fig. 3 shows a schematic structural view of the movable body 203 in the shield case 200. Referring to fig. 2 and 3, the shield case 200 in the example includes an adaptor layer 201, a cover body 202, a movable body 203, and an extrusion member 204.
The interposer 201 is used as a carrier for attaching and arranging an IC device/integrated circuit device 401 (shown in fig. 5 and 6) including a chip 402, and may be made of a material selected from a ceramic, a substrate, and copper. Interposer 201 is generally a plate-like structure, and thus interposer 201 is also commonly referred to as an interposer. The length and width of interposer 201 are significantly greater than the height (or thickness), i.e., interposer 201 is apparently wide, large and thin. The interposer 201 has a first surface 2011 and a second surface 2013 opposite to each other, so that the interposer 201 has a thickness direction from the first surface 2011 to the second surface 2013. In other words, the vertical distance between the first surface 2011 and the second surface 2013 is a dimension on the thickness property of the interposer layer 201.
Of the two surfaces, the first surface 2011 of the interposer layer 201 is provided with the conductive portion 2012, and the second surface 2013 is provided with the soldering portion 2014. The soldering portion 2014 is electrically connected to the conductive portion 2012. As an alternative implementation, for example, a line is arranged in the interposer 201 via the RDL, so that the soldering portion 2014 is electrically connected to the conductive portion 2012. Alternatively, the conductive connection between the conductive portion 2012 and the soldering portion 2014 may be implemented by a conductive column penetrating through the interposer 201 in the thickness direction.
In an example, the conductive portion 2012 and the solder portion 2014 may be formed by thermal melting and transferring solder paste to the interposer 201. Alternatively, the conductive portion 2012 is made of a metal wire and embedded in the adapting layer 201 or fixed to the adapting layer 201 by an ultraviolet curing adhesive. Alternatively, the conductive portion 2012 can be formed by one end of a wire/metal wire electrically connected to the soldering portion 2014. Alternatively, the solder 2014 is typically selected as a solder ball/bead, which is substantially spherical. The solder 2014 in the form of solder balls is used as pins of the BGA package, and the number of the solder balls is improved or added according to the number of the pins of an IC package device (SIP device), so that the number of the pins of the BGA transition metal box is increased, and finally, the function and the performance are improved.
Fig. 4 shows a schematic structural diagram of another shielding can 200 in the present application example. Fig. 2 and 3 can be referred to as a partially unrendered structure in fig. 4. Referring to fig. 4, as some alternatives, first surface 2011 of interposer 201 is provided with notch 301. The groove 301 extends from the first surface 2011 by a predetermined depth in the thickness direction of the interposer 201. Correspondingly, the conductive portion 2012 is embedded in the recess 301, e.g., at the bottom of the recess.
Further, the shielding can 200 also has a conductive contact 303, and the conductive contact 303 protrudes (or, at least partially protrudes) from the recess 301. Thus, when the IC device is placed in the housing cavity 205 of the cover 202, the conductive contact points 303 can be compressed in the thickness direction by the pressing action/caulking action of the pressing member 204 to be in electrical contact with the conductive portions 2012. To improve the degree of retention of the IC device, the conductive contacts 303 are selected to be resilient to generate a counter force against the compression when compressed, thereby subjecting the IC device to a constant static force. In addition, the conductive contact 303 also has conductivity so that the IC device is electrically connected to the soldering portion 2014 therethrough.
In addition, the landing layer 201 may further include a defining groove 302, and the defining groove 302 is not overlapped with the recess 301, in consideration of uniform stress of the IC device. More specifically, the defining groove 302 is located at a region of the first surface 2011 of the interposer layer 201 where the recess 301 is not located. The defining groove 302 extends a given depth in the thickness direction from the first surface 2011 of the interposer layer 201. In correspondence with this, the shield case 200 also has a support contact point 304, and the support contact point 304 protrudes from within the defining groove 302 and can be compressed in the thickness direction. In one example, the support contact is made of a material selected to be resilient. By configuring the conductive contact 303 and the supporting contact 304 with elastic materials, when the movable body 203 is opened, the movable body 203 can be opened by rotating along the movable rotating shaft arranged on the fixed edge of the cover 202, the pressure of the IC package device is released, and the elastic contact (the conductive contact 303) and the distributing contact (the supporting contact 304) eject the contacts out of the groove based on the elastic characteristics, so that the circuit is opened from the pin circuit of the IC package device.
To ensure that conductive contact 303 can more effectively contact conductive portion 2012 within groove 301, the length of extrusion 204 can be comparable to, e.g., the same as, the depth of groove 301. Further, the groove 301 and the defining groove 302 may also be configured in other ways. For example, in the illustrated construction, the recess 301 and the defining groove 302 have the same depth, and the conductive contact 303 and the support contact 304 have the same height. In other examples, the depth of the recess 301 and the defining groove 302 are different, and accordingly the height of the conductive contact 303 and the support contact 304 is different. Typically, grooves 301 and defining grooves 302 have the same depth, and the depth is adaptively designed to the height of extrusions 204 so that extrusions 204 can interfere with the conduction of the pins of the IC device.
The cover 202 is made of metal or microwave absorbing material, and is used for shielding electromagnetic signals, avoiding interference of external electronic components outside the cover 202, and preventing interference of the electronic components inside the cover 202 to the external components. The enclosure 202 is a generally shell-like structure that surrounds the outer periphery of the interposer 201. Specifically, the cover 202 in this example surrounds the periphery of the interposer 201 to define the receiving cavity 205 shown in fig. 3 by its inner wall and the first surface 2011 of the interposer 201. Meanwhile, the accommodating cavity 205 also serves as a remaining space for the electronic component, and when the accommodating cavity becomes a physically closed space, the cover 202 can prevent the electromagnetic signal from leaking and entering.
The enclosure 202 is provided with an opening as a passage and an entrance for the IC device into the enclosure 202, and the opening communicates with the housing chamber 205. The movable body 203 is a structure for closing the opening of the cover 202. Which may be separate from the housing 202 or may be attached to the housing 202 by any suitable means (bolted, hinged, flexibly attached, etc.).
The movable body 203 may also be partially or entirely detached from the enclosure 202 by being operated in view of convenience in maintenance, thereby exposing an opening of the enclosure 202 to remove the IC device from the housing chamber 205 for replacement or repair. For example, when the movable body 203 is hinged to the cover 202 through a hinge, the movable body 203 can be opened or closed by rotating, so that the opening of the cover 202 is exposed or closed.
In the present example, the enclosure 202 has a substantially rectangular parallelepiped configuration. The movable body 203 is formed as a side wall in the illustrated structure; in other examples, the movable body 203 may also be formed as a top wall of the cover 202. The movable body 203 may be a wall entirely or partially; in the illustrated construction, the movable body 203 forms one integral side wall of the cuboid of the housing 202.
The pressing member 204 is a structural member capable of moving synchronously with the movable body 203, that is, the pressing member 204 can perform corresponding actions as the movable body 203 moves, and the movement track of the pressing member 204 is also constrained by the movable body 203.
One of the primary functions of extrusion 204 is: in the closed housing 202, the pressing member 204 can press the IC device accommodated in the accommodating cavity 205, so that the IC device is firmly limited at the expected set position while maintaining the stable electrical connection with each corresponding electronic component. Specifically, when the movable body 203 is detached from the cover body 202 to expose the opening of the cover body 202, the IC device can enter the housing cavity 205 through the opening. And during the process that the movable body 203 is combined with the cover body 202, namely the movable body 203 is changed from the exposure opening state to the covering opening state, the pressing member 204 moves along with the movable body 203 and the pressing member 204 is displaced into the accommodating cavity 205, so that the pressing member 204 is pressed and moved towards the first surface 2011, and the IC device is pressed and held between the pressing member 204 and the transfer layer 201.
In one example, extrusion 204 may independently function to allow the IC device to be held to extrusion 204 and interposer 201. In other examples, the pressing member 204 may serve multiple functions, for example, in an alternative, the pressing member 204 is selected as a rotating shaft, and the movable body 203 is rotatably connected to the cover 202 through the pressing member 204 as the rotating shaft. Therefore, the pressing member 204 may play a role of rotation restriction of the movable body 203 and also a role of pressing the IC device.
The extrusion realized as a rotating shaft may alternatively be curved. Further, the rotating shaft has a circular arc-shaped outer surface. It has a smooth surface to avoid scratching of the IC device.
For larger sized IC devices, which typically require definition or reinforcement from multiple areas, the number of extrusions 204 may be greater than 1 (e.g., 2, 3, 4, or even more). In order to apply force to the IC devices dispersedly and evenly, all of the pressing members 204 may be distributed throughout the movable body 203. In some examples, all of extrusions 204 are arranged in a criss-cross regular array. For example, the row spacing, column spacing, and spacing between extrusions 204 are all constant and may be equal or different.
As an application example of the shielding can 200 discussed above, an electromagnetic shielding package structure is also provided in the present application example.
Fig. 5 is a first electromagnetic shielding package structure 400 based on the shielding can 200 and the integrated circuit device 401 shown in fig. 2. Referring to fig. 5, the package structure is packaged with an integrated circuit device 401 through a shielding can 200, and it is retained in a containing cavity 205 of the shielding can 200. The movable body 203 of the shield case 200 is in a state of covering the opening thereof, so that the integrated circuit device 401 is pressed by the pressing member 204, and the leads thereof are directly electrically contacted and abutted against the conductive portions 2012, thereby the integrated circuit device 401 is fixed while maintaining the conductive connection.
The package structure may be fabricated in the following manner.
Step one, an integrated circuit device 401 is provided. Which can be obtained directly from the chip packaging plant.
Step two, the integrated circuit device 401 is placed in the accommodating cavity 205 of the cover body 202 from the exposed opening of the shield can 200, and the pins of the integrated circuit device 401 are aligned with the conductive parts 2012.
Step three, operating the movable body 203 of the shielding case 200 to enable the opening to be in a closed state, and therefore, abutting against the integrated circuit device 401 through the pressing piece 204, so that the pins of the integrated circuit device 401 are in direct conductive contact with the conductive parts 2012.
Fig. 6 shows a second electromagnetic shielding package structure 500 based on the shielding can 200 and the integrated circuit device 401 shown in fig. 4. Referring to fig. 6, the package structure is substantially the same as the package structure shown in fig. 5, and the main differences are: in the package structure shown in fig. 6, a groove 301 and its corresponding conductive contact 303, a limiting groove 302 and its corresponding supporting contact 304 are provided in the shielding can 200. And therefore, the movable body 203 of the shield case 200 is in a state of covering the opening thereof, thereby pressing the integrated circuit device 401 by the pressing member 204, causing the pins of the integrated circuit device 401 to indirectly electrically contact and abut against the conductive portions 2012, and further causing the integrated circuit device 401 to be fixed while maintaining the conductive connection.
In other words, the leads of the integrated circuit device 401 indirectly conductively contact and abut the conductive portions 2012, and the conductive contacts 303 are disposed between the leads and the conductive portions 2012. Furthermore, support contacts 304 are located between the integrated circuit device 401 and the interposer.
The manufacturing method of the electromagnetic shielding packaging structure is briefly described as follows.
Substrate-chip-bonding-routing-packaging-cutting-placing into BGA adapting metal box.
1. Substrate: the substrate manufacturing plant (board factory) completes the substrate manufacturing.
2. Chip bonding/routing: and finishing the chip mounting and routing process on the surface of the substrate.
3. And (3) encapsulation: and the connected chip circuits are plastically packaged by using a plastic packaging material to play a role in protection.
4. Cutting: and cutting the product into single layers by using a machine.
5. Put into SIP module switching metal box: and placing the IC packaging device to be used into the SIP module switching metal box.
Or the process can be described as follows.
Step one, an integrated circuit device 401 (1 to 4 above) is provided.
Step two, the integrated circuit device 401 is placed in the accommodating cavity 205 of the cover 202 through the opening of the shielding case 200, so that the pins of the integrated circuit device 401 are aligned with the conductive portions 2012 in the recess 301 and are in contact with the conductive contacts at least partially located in the recess 301. At the same time, other areas of the integrated circuit device 401 are aligned with the support contacts.
Step three, operating the movable body 203 of the shielding case 200 to close the opening, and abutting against the integrated circuit device 401 through the pressing member 204 to make the pins and the conductive parts 2012 indirectly electrically contacted through the conductive contact points 303 pressed into the grooves 301.
Fig. 7 shows the back lead pattern of the integrated circuit device 401 (shown in a of fig. 7) and the back lead pattern of the package structure (shown in b of fig. 7) in the two package structures.
Therein, diagram a in fig. 7 shows a back pin structure of a packaged integrated circuit device 401, which is pin-shaped. The pin structure can be realized by integrally packaging electronic components such as chips and the like by adopting a Quad Flat No-lead Package (QFN) or a Land Grid Array (LGA) process.
Wherein, b in fig. 7 shows the back pin structure of the structure after the device is packaged by electromagnetic shielding, which adopts a BGA type pin structure, and the pin structure is spherical.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (19)

1. A shield for electromagnetic shielding in an integrated circuit package, the shield comprising:
the plate-shaped transfer layer is provided with a first surface and a second surface which are opposite, the first surface of the transfer layer is provided with a conductive part, the second surface is provided with a welding part, and the welding part is electrically connected with the conductive part;
the cover body is surrounded on the periphery of the adapter layer so as to jointly limit a containing cavity through the inner wall and the first surface, and the cover body is provided with an opening communicated with the containing cavity;
a movable body operable to selectively cover or expose the opening;
a pressing member connected to the movable body, the pressing member being configured to move with the movable body so as to be displaced into the accommodation chamber to generate a pressing action toward the first surface during a transition of the movable body from an exposure opening state to a covering opening state;
the transfer layer is defined with a thickness direction from the first surface to the second surface, the transfer layer is provided with a groove extending from the first surface along the thickness direction by a preset depth, the conductive part is arranged in the groove, the shielding case comprises a conductive contact point, and the conductive contact point extends out of the groove and can be compressed along the thickness direction to be in electrical contact with the conductive part.
2. The shield of claim 1, wherein the extrusion is curved.
3. The shield of claim 1, wherein the extrusion has an outer surface that is rounded.
4. The shield case according to claim 2, wherein the number of the pressing members is plural and is dispersed throughout the movable body.
5. The shielding cage of claim 1, 2, 3 or 4, wherein said solder bumps;
and/or the conductive part is composed of one end part of a lead electrically connected with the welding part.
6. The shielding cage of claim 1, wherein said conductive contact is resilient.
7. The shield according to claim 6, wherein the transition layer is provided with a defining groove extending from the first surface by a given depth in the thickness direction, the defining groove being misaligned with the recess, the shield including a supporting contact point protruding from within the defining groove and being capable of being compressed in the thickness direction.
8. The shielding cage of claim 7, wherein said support contact points are resilient.
9. An electromagnetic shielding package, comprising:
a shield case;
the integrated circuit device with the pin is kept in the accommodating cavity of the shielding case;
the movable body is in a state of covering the opening, so that the pins of the integrated circuit device are directly or indirectly in conductive contact and abut against the conductive part by extruding the extrusion piece, and the integrated circuit device is fixed and encapsulated in the shielding cover;
wherein, the shield cover is applied to carry out the electromagnetic shield in the integrated circuit package, the shield cover includes: the plate-shaped transfer layer is provided with a first surface and a second surface which are opposite, the first surface of the transfer layer is provided with a conductive part, the second surface is provided with a welding part, and the welding part is electrically connected with the conductive part;
the cover body is surrounded on the periphery of the adapter layer so as to jointly limit a containing cavity through the inner wall and the first surface, and the cover body is provided with an opening communicated with the containing cavity;
a movable body operable to selectively cover or expose the opening;
and the pressing piece is connected to the movable body and is configured to move along with the movable body so as to be displaced into the accommodating cavity to generate pressing action towards the first surface in the process that the movable body is converted from the exposure opening state to the covering opening state.
10. The electromagnetically shielded package structure of claim 9, wherein the extrusion is curved; alternatively, the extrusion has an outer surface that is rounded.
11. The electromagnetic shielding package structure of claim 10, wherein the pressing members are plural in number and dispersed throughout the movable body.
12. The emi shielding package structure of claim 9, 10 or 11, wherein the soldering portion is a solder ball; and/or the conductive part is composed of one end part of a lead electrically connected with the welding part.
13. The emc package of claim 9, wherein the interposer layer defines a thickness direction from the first surface to the second surface, the interposer layer is disposed in a groove extending from the first surface along the thickness direction by a predetermined depth, the conductive portion is disposed in the groove, and the shield cover includes a conductive contact that protrudes from the groove and is capable of being compressed along the thickness direction to electrically contact the conductive portion.
14. The emcftective structure of claim 13, wherein the conductive contacts are resilient.
15. The emcftective structure of claim 13 or 14, wherein the interposer layer is provided with a defining groove extending from the first surface by a given depth in the thickness direction, the defining groove is not coincident with the recess, and the shield case includes a supporting contact point protruding from the defining groove and capable of being compressed in the thickness direction.
16. The emcftective structure of claim 15, wherein the supporting contact points are resilient.
17. The emc package of claim 9, wherein the leads of the ic device are indirectly in conductive contact with and abutting the conductive portions, and wherein conductive contacts are disposed between the leads and the conductive portions;
support contacts are located between the integrated circuit device and the interposer.
18. A method of making an electromagnetically shielded package as claimed in any one of claims 9 to 17, wherein the method comprises:
providing an integrated circuit device;
placing the integrated circuit device in the accommodating cavity of the cover body through the opening of the shielding cover in the exposed state so as to align the pins of the integrated circuit device with the conductive part;
the movable body of the shield case is operated to make the opening in a closed state, and the pin is abutted against the integrated circuit device through the extrusion piece so as to make direct or indirect conductive contact with the conductive part.
19. The method of claim 18, wherein the step of placing the integrated circuit device in the cavity of the cover to align the leads of the integrated circuit device with the conductive portions in the recesses comprises:
placing the integrated circuit device on the conductive contact point and the support contact point of the switching layer, so that part of pins of the integrated circuit device are in contact with the conductive contact point, and the rest pins of the integrated circuit device are in contraposition with the support contact;
wherein the conductive contact is at least partially located in the recess of the interposer layer and the support contact is at least partially located in the defining slot of the interposer layer.
CN202010105679.6A 2020-02-20 2020-02-20 Shielding cover, electromagnetic shielding packaging structure and manufacturing method thereof Active CN111293106B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010105679.6A CN111293106B (en) 2020-02-20 2020-02-20 Shielding cover, electromagnetic shielding packaging structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010105679.6A CN111293106B (en) 2020-02-20 2020-02-20 Shielding cover, electromagnetic shielding packaging structure and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN111293106A CN111293106A (en) 2020-06-16
CN111293106B true CN111293106B (en) 2021-11-23

Family

ID=71026792

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010105679.6A Active CN111293106B (en) 2020-02-20 2020-02-20 Shielding cover, electromagnetic shielding packaging structure and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN111293106B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115332093B (en) * 2021-05-11 2025-02-14 江苏长电科技股份有限公司 Manufacturing method of partitioned electromagnetic shielding packaging structure and packaging structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936626A (en) * 1972-10-25 1976-02-03 Chemetron Corporation Method of heating comestibles
JPH10255942A (en) * 1997-03-14 1998-09-25 Nec Kyushu Ltd Ic socket
CN103493198B (en) * 2012-09-11 2016-05-25 华为终端有限公司 Electronic device and electronic device manufacturing method
CN106409774B (en) * 2015-07-31 2019-04-26 鹏鼎控股(深圳)股份有限公司 Shield, packaging structure and packaging structure manufacturing method
CN207061864U (en) * 2017-06-28 2018-03-02 歌尔科技有限公司 A kind of mounting structure of chip
CN210579896U (en) * 2019-07-29 2020-05-19 深圳传音控股股份有限公司 Shielding case, electronic device and terminal adopting shielding case

Also Published As

Publication number Publication date
CN111293106A (en) 2020-06-16

Similar Documents

Publication Publication Date Title
US10381312B2 (en) Semiconductor package and method of manufacturing the same
US8269320B2 (en) Integrated circuit package system for electromagnetic isolation and method for manufacturing thereof
US8704349B2 (en) Integrated circuit package system with exposed interconnects
US5200366A (en) Semiconductor device, its fabrication method and molding apparatus used therefor
KR101521255B1 (en) Integrated circuit package system with dual connections
US6246015B1 (en) Printed circuit board for ball grid array semiconductor packages
US11908805B2 (en) Semiconductor packages and associated methods with solder mask opening(s) for in-package ground and conformal coating contact
US8637963B2 (en) Radiation-shielded semiconductor device
CN113130434A (en) Package structure and method for manufacturing the same
US6603193B2 (en) Semiconductor package
CN107546184B (en) Semiconductor package and method for manufacturing the same
CN111293106B (en) Shielding cover, electromagnetic shielding packaging structure and manufacturing method thereof
US20070045797A1 (en) Microelectronic devices and microelectronic support devices, and associated assemblies and methods
CN111293105B (en) SIP module switching device and SIP module electromagnetic shielding system
GB2344690A (en) Cavity down ball grid array module
TW202027236A (en) Packaging structure for reducing residual air and method thereof capable of effectively preventing the chip module package from electrical connection failure
KR100348136B1 (en) Method of anti-static molding for circuit board of semiconductor package and metal mold thereof
KR100388289B1 (en) Printed Circuit Board for Ball Grid Array Semiconductor Packages
US20040173941A1 (en) Exposed die molding apparatus
CN220829959U (en) Radio frequency module and radio frequency device
US6291260B1 (en) Crack-preventive substrate and process for fabricating solder mask
KR100400673B1 (en) printed circuit board for semiconductor package
KR100258351B1 (en) Semiconductor Package
KR100357879B1 (en) Printed Circuit Board for Semiconductor Packages
KR20220016623A (en) Communication module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant