CN111293070A - Bipolar electrostatic suction head of miniature light-emitting diode and array thereof - Google Patents
Bipolar electrostatic suction head of miniature light-emitting diode and array thereof Download PDFInfo
- Publication number
- CN111293070A CN111293070A CN202010127004.1A CN202010127004A CN111293070A CN 111293070 A CN111293070 A CN 111293070A CN 202010127004 A CN202010127004 A CN 202010127004A CN 111293070 A CN111293070 A CN 111293070A
- Authority
- CN
- China
- Prior art keywords
- electrode
- electrostatic suction
- suction head
- bipolar electrostatic
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 239000011651 chromium Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- 239000013013 elastic material Substances 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- -1 titanium or aluminum Chemical class 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011345 viscous material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
技术领域technical field
本发明涉及微型发光二极管的技术领域,尤其涉及一种微型发光二极管双极静电吸头及其阵列。The invention relates to the technical field of miniature light-emitting diodes, in particular to a bipolar electrostatic suction head of a miniature light-emitting diode and an array thereof.
背景技术Background technique
Micro LED和MEMS等微型器件的转移和封装一直是制约其进行大规模商用的重要因素,目前微型器件的转移多采用范德华力,例如转移打印技术(transfer printing),该技术通常需要在转移头上涂覆具有一定粘性的材料,例如PDMS,在进行转移时为了确保转移头上的粘性材料与微型器件接触需要施加较大的外力,例如真空贴合,重力挤压等,因此当微型器件放置在驱动背板后其表面会有较多的粘性材料的残留,从而对微型器件的电学性质产生不良影响。The transfer and packaging of micro-devices such as Micro LED and MEMS has always been an important factor restricting their large-scale commercial use. At present, the transfer of micro-devices mostly adopts van der Waals force, such as transfer printing technology, which usually requires the transfer head. Coating materials with a certain viscosity, such as PDMS, requires a large external force, such as vacuum bonding, gravity extrusion, etc., to ensure that the viscous material on the transfer head is in contact with the micro device during transfer. Therefore, when the micro device is placed on the After the backplane is driven, a large amount of viscous material remains on its surface, which adversely affects the electrical properties of the micro-device.
利用静止的异性电荷产生的静电吸附力对微型器件进行转移时,不会污染微型器件的表面,另外,静电释放的速度较快大大提高了转移效率。When the micro device is transferred by the electrostatic adsorption force generated by the static charge of the opposite sex, the surface of the micro device will not be polluted. In addition, the speed of electrostatic discharge is relatively fast, which greatly improves the transfer efficiency.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种增大静电吸附力其简化静电吸头与静电发生器的连接的微型发光二极管双极静电吸头及其阵列。The purpose of the present invention is to provide a miniature light-emitting diode bipolar electrostatic suction head and an array thereof that increase the electrostatic suction force and simplify the connection between the electrostatic suction head and the electrostatic generator.
本发明提供一种微型发光二极管双极静电吸头,其包括呈圆环状且未完全闭合的第一电极、位于第一电极内部且呈圆形的第二电极、位于第一电极和第二电极之间的缝隙、填充在缝隙内的第一介电层、与第一电极连接的第一电极连接线、与第二电极连接的第二电极连接线以及第二介电层,其中,所述第二介电层覆盖在第一电极、第二电极、第一介电层、第一电极连接线和第二电极连接线上,所述第一电极和第二电极同时吸附一个微型发光二极管。The present invention provides a miniature light-emitting diode bipolar electrostatic suction head, which comprises a circular and incompletely closed first electrode, a circular second electrode located inside the first electrode, a first electrode and a second circular electrode. A gap between electrodes, a first dielectric layer filled in the gap, a first electrode connection line connected to the first electrode, a second electrode connection line connected to the second electrode, and the second dielectric layer, wherein the The second dielectric layer covers the first electrode, the second electrode, the first dielectric layer, the first electrode connection line and the second electrode connection line, and the first electrode and the second electrode simultaneously adsorb a micro light-emitting diode .
优选地,第二电极连接线从第一电极的未完全闭合处延伸出去,第一电极连接线的延伸方向和第二电极连接线的延伸方向相反。Preferably, the second electrode connecting wire extends from the incompletely closed part of the first electrode, and the extending direction of the first electrode connecting wire is opposite to the extending direction of the second electrode connecting wire.
优选地,第一介电层的厚度不小于第一电极和第二电极的厚度。Preferably, the thickness of the first dielectric layer is not less than the thicknesses of the first electrode and the second electrode.
优选地,第二介电层的厚度不小于 Preferably, the thickness of the second dielectric layer is not less than
优选地,第一电极和第二电极均采用铬和金复合层或钛或铝制成。Preferably, both the first electrode and the second electrode are made of chromium and gold composite layer or titanium or aluminum.
本发明还提供一种微型发光二极管双极静电吸头阵列,其包括以M行和N列设置的双极静电吸头、第一接触电极、第二接触电极、与第一接触电极连接的多个第一连接线、与第二接触电极连接的多个第二连接线、均设置在第一接触电极和第二接触电极内的多个电极引线孔、贴附在第一接触电极上且通过电极引线孔连接的第一端子以及贴附在第二接触电极上且通过电极引线孔连接的第二端子,其中多个第一连接线和多个第二连接线以交替的方式分别连接每行双极静电吸头的第一电极连接线和第二电极连接线。The present invention also provides a miniature light-emitting diode bipolar electrostatic suction head array, which includes bipolar electrostatic suction heads arranged in M rows and N columns, a first contact electrode, a second contact electrode, and multiple electrodes connected to the first contact electrode. A first connection line, a plurality of second connection lines connected to the second contact electrode, a plurality of electrode lead holes disposed in the first contact electrode and the second contact electrode, attached to the first contact electrode and passed through The first terminal connected by the electrode lead hole and the second terminal attached to the second contact electrode and connected through the electrode lead hole, wherein a plurality of first connection lines and a plurality of second connection lines are connected to each row in an alternating manner, respectively The first electrode connection line and the second electrode connection line of the bipolar electrostatic suction head.
优选地,还包括与第一端子连接的第一电压源以及与第二端子连接的第二电压源。Preferably, a first voltage source connected to the first terminal and a second voltage source connected to the second terminal are also included.
优选地,微型发光二极管双极静电吸头阵列位于转运基板上,第二端子、第一电压源、第二端子和第二电压源均设于转运基板的背面,双极静电吸头形成在转运基板的正面。Preferably, the micro-LED bipolar electrostatic suction head array is located on the transport substrate, the second terminal, the first voltage source, the second terminal and the second voltage source are all arranged on the back of the transport substrate, and the bipolar electrostatic suction head is formed on the transport substrate the front side of the substrate.
优选地,微型发光二极管双极静电吸头阵列还包括设置在每个电极引线孔内的填充导电层以及位于导电层内的弹性材料层,导电层连接第一接触电极和第一端子以及第二接触电极和第二端子。Preferably, the micro light emitting diode bipolar electrostatic suction head array further includes a filled conductive layer disposed in each electrode lead hole and an elastic material layer located in the conductive layer, the conductive layer connecting the first contact electrode and the first terminal and the second Contact the electrode and the second terminal.
本发明采用双极静电吸头并利用静电吸附力对微型发光二极管进行巨量转移,并简化静电吸头与静电发生器的连接结构,从而减小吸头与微型发光二极管表面的间隙(gap),利用静电吸头高效的对微型器件进行转移。The invention adopts a bipolar electrostatic suction head and utilizes electrostatic adsorption force to transfer a large amount of micro-LEDs, and simplifies the connection structure of the electrostatic suction head and the electrostatic generator, thereby reducing the gap between the suction head and the surface of the micro-LEDs , the use of electrostatic suction heads to efficiently transfer micro-devices.
附图说明Description of drawings
图1为本发明微型发光二极管双极静电吸头的结构示意图;1 is a schematic structural diagram of a miniature light-emitting diode bipolar electrostatic suction head of the present invention;
图2为图1所示微型发光二极管双极静电吸头的剖视图;FIG. 2 is a cross-sectional view of the miniature light-emitting diode bipolar electrostatic suction head shown in FIG. 1;
图3为本发明微型发光二极管双极静电吸头阵列的结构示意图;3 is a schematic structural diagram of an array of miniature light-emitting diode bipolar electrostatic suction heads of the present invention;
图4为图3所示微型发光二极管双极静电吸头阵列的背面的结构示意图;FIG. 4 is a schematic structural diagram of the back surface of the miniature light-emitting diode bipolar electrostatic suction head array shown in FIG. 3;
图5为图3所示微型发光二极管双极静电吸头阵列的电极引线孔的示意图;FIG. 5 is a schematic diagram of the electrode lead holes of the micro-LED bipolar electrostatic suction head array shown in FIG. 3;
图6为图3所示微型发光二极管双极静电吸头阵列吸附微型发光二极管的结构示意图。FIG. 6 is a schematic structural diagram of the micro-LED bipolar electrostatic suction head array shown in FIG. 3 adsorbing the micro-LEDs.
具体实施方式Detailed ways
下面结合附图和具体实施例,进一步阐明本发明,应理解这些实施例仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。Below in conjunction with the accompanying drawings and specific embodiments, the present invention will be further clarified. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention. Modifications of equivalent forms all fall within the scope defined by the appended claims of this application.
为使图面简洁,各图中只示意性地表示出了与本发明相关的部分,它们并不代表其作为产品的实际结构。另外,以使图面简洁便于理解,在有些图中具有相同结构或功能的部件,仅示意性地绘示了其中的一个,或仅标出了其中的一个。在本文中,“一个”不仅表示“仅此一个”,也可以表示“多于一个”的情形。In order to keep the drawings concise, the drawings only schematically show the parts related to the present invention, and they do not represent its actual structure as a product. In addition, in order to make the drawings concise and easy to understand, in some drawings, only one of the components having the same structure or function is schematically shown, or only one of them is marked. As used herein, "one" not only means "only one", but also "more than one".
本发明揭示一种微型发光二极管双极静电吸头100,如图1和图2所示,双极静电吸头100包括呈圆环状且未完全闭合的第一电极10、位于第一电极10内部且呈圆形的第二电极20、位于第一电极10和第二电极20之间的缝隙30、填充在缝隙30内的第一介电层40、与第一电极10连接的第一电极连接线11、与第二电极20连接的第二电极连接线21以及第二介电层50,其中,第二介电层50覆盖在第一电极10、第二电极20、第一介电层40、第一电极连接线11和第二电极连接线21上,其中第一电极10和第二电极20同时吸附一个微型发光二极管。The present invention discloses a miniature light-emitting diode bipolar
第一电极10和第二电极20都是圆形,增大了吸力且减少了边缘放电现象。Both the
其中,第二电极连接线21从第一电极10的未完全闭合处延伸出去,第一电极连接线11的延伸方向和第二电极连接线21的延伸方向相反。The second
其中,第一介电层40的厚度不小于第一电极10和第二电极20的厚度,第二介电层50的厚度不小于 Wherein, the thickness of the first
其中,第一电极10和第二电极20均采用铬和金复合层或钛或铝等具有与和转运基板1的结合力好且具有较佳的耐氧化和耐腐蚀性质的金属制成。The
本发明还揭示一种微型发光二极管双极静电吸头阵列,如图3和图4所示,其包括以M行和N列设置的双极静电吸头100、第一接触电极61、第二接触电极62、与第一接触电极61连接的多个第一连接线63、与第二接触电极62连接的多个第二连接线64、均设置在第一接触电极61和第二接触电极62内的多个电极引线孔612、贴附在第一接触电极61上且通过电极引线孔612连接的第一端子71、贴附在第二接触电极62上且通过电极引线孔612连接的第二端子72、与第一端子71连接的第一电压源VA以及与第二端子72连接的第二电压源VB,其中多个第一连接线63和多个第二连接线64以交替的方式分别连接每行双极静电吸头100的第一电极连接线11和第二电极连接线21。The present invention also discloses a miniature light-emitting diode bipolar electrostatic suction head array, as shown in FIG. 3 and FIG. 4 , which includes bipolar
其中“多个第一连接线63和多个第二连接线64以交替的方式分别连接每行双极静电吸头100的第一电极连接线11和第二电极连接线21”的意思是第一行双极静电吸头100的第一电极连接线11均连接至最上面的第一连接线63,第一行双极静电吸头100的第二电极连接线21和第二行双极静电吸头100的第一电极连接线11分别连接在第二连接线64的相对两侧,第二行双极静电吸头100的第二电极连接线21和第三行双极静电吸头100的第一电极连接线11分别连接在第二行的第一连接线63的相对两侧,以此类推,最后一行双极静电吸头100的第二电极连接线21连接至最下面的第一连接线63;或者第一行双极静电吸头100的第一电极连接线11均连接至最上面的第二连接线64,第一行双极静电吸头100的第二电极连接线21和第二行双极静电吸头100的第一电极连接线11分别连接在最上面的第一连接线64的相对两侧,第二行双极静电吸头100的第二电极连接线21和第三行双极静电吸头100的第一电极连接线11分别连接在第二行的第二连接线64的相对两侧,以此类推,最后一行双极静电吸头100的第二电极连接线21连接至最下面的第二连接线64。Wherein "a plurality of
如图5所示,微型发光二极管双极静电吸头阵列还包括设置在每个电极引线孔612内的填充导电层613以及位于导电层613内的弹性材料层614,导电层613连接第一接触电极61和第一端子71以及第二接触电极62和第二端子72,实现第一接触电极61和第一端子71以及第二接触电极62和第二端子72之间的电性连接。As shown in FIG. 5 , the micro-LED bipolar electrostatic suction head array further includes a filled
在电极引线孔内设置弹性材料,降低了接触电极内的应力,延长了静电吸头的使用寿命。The elastic material is arranged in the electrode lead hole, which reduces the stress in the contact electrode and prolongs the service life of the electrostatic suction head.
如图6所示,微型发光二极管双极静电吸头阵列位于转运基板1上,阵列设置的微型发光二极管200位于暂存基板2上,当需要转运微型发光二极管200时,通过双极静电吸头100的第一电极10和第二电极20同时吸附一个微型发光二极管200。As shown in FIG. 6 , the micro-LED bipolar electrostatic suction head array is located on the
第一端子71、第一电压源VA、第二端子72和第二电压源VB均设于转运基板1的背面。 The
第二端子72、第一电压源VA、第二端子72和第二电压源VB统称为静电发生器的正负极,通过将静电发生器设置在背面,减小了双极静电吸头100与微型发光二极管200之间的gap值。 The
双极静电吸头100形成在转运基板1的正面。The bipolar
本发明还揭示一种微型发光二极管双极静电吸头阵列的制造方法,包括如下步骤:The present invention also discloses a method for manufacturing a miniature light-emitting diode bipolar electrostatic suction head array, comprising the following steps:
S1:首先,利用CNC加工技术(即计算机数字化控制精密机械加工)或激光技术在转运基板1的第一接触电极61和第二接触电极62上形成电极引线孔612;然后清洗转运基板1,在酸性或碱性清洗剂中清洗转运基板1后冲水,然后分别在有机溶液(如丙酮或异丙醇)中,并以超声进行辅助;S1: First, use CNC machining technology (ie, computer digital control precision machining) or laser technology to form
S2:首先,在电极引线孔612内利用化学镀技术(如化学镀银)形成导电层613;然后在电极引线孔612内形成位于导电层613内的弹性材料,如PDMS(聚二甲基硅氧烷,polydimethylsiloxane);S2: First, a
S3:在转运基板1的背面形成第一端子71和第二端子71;S3: forming the
S4:在转移基板1的正面形成分别与第一接触电极61和第二接触电极62连接的第一电极10和第二电极20。S4 : The
其中,步骤S3的具体方法为:Wherein, the specific method of step S3 is:
S31:首先在转运基板1的背面旋涂负性光阻,然后曝光和显影;S31: First spin-coat the negative photoresist on the backside of the
S32:利用等离子体清洁设备对曝光后的转运基板1进行清洁;S32: use plasma cleaning equipment to clean the exposed
S33:利用物理气相沉积在在转运基板1的背面沉积金属膜,金属膜的材料为单层Ti或Cr/Au(其中Au在Cr的上方);S33: use physical vapor deposition to deposit a metal film on the back of the
S34:利用剥离lift-off方法对金属膜进行剥离,形成目标图案,即第一端子71和第二端子72。S34 : The metal film is peeled off by a lift-off method to form target patterns, that is, the
步骤S4的具体方法为:The specific method of step S4 is:
S41:在转运基板1的正面均匀涂负性光阻,其厚度≥2μm,然后进行曝光和显影;最后利用等离子体清洁设备的对曝光后的转运基板1进行清洁;S41: uniformly coat a negative photoresist on the front surface of the
S42:利用物理气相沉积(如电子束蒸镀,磁控溅射等成膜技术)沉积金属膜层,金属膜层的材料为Ti/Cu(其中Cu在Ti的上方)或Cr/Au(其中Au在Cr的上方)等与转运基板1结合力较好的金属,其厚度 S42: Use physical vapor deposition (such as electron beam evaporation, magnetron sputtering and other film forming techniques) to deposit a metal film layer, and the material of the metal film layer is Ti/Cu (where Cu is above Ti) or Cr/Au (wherein Au is above Cr) and other metals with better bonding force with the
S43:利用剥离lift-off方法对金属膜层进行剥离,形成半闭合的目标图案,即第一电极10;S43: peeling off the metal film layer by using the peeling lift-off method to form a semi-closed target pattern, that is, the
S44:利用气相沉积方法在转移基板1上沉积无机介电层(其材料为SiNx,TiO2或Al2O3等),其厚度等于第一电极10的厚度,然后进行匀胶、曝光和显影,最后对无机介电层进行干刻使其只存在目标位置;S44 : deposit an inorganic dielectric layer (the material of which is SiNx, TiO 2 or Al 2 O 3 , etc.) on the
S45:重复上述步骤S41至S44的步骤形成第二电极20;S45: repeating the above steps S41 to S44 to form the
S46:利用气相沉积方法在基板上沉积正面的SiNx、TiO2或Al2O3等无机介电层或旋涂有机介电层,即形成第二介电层50,其厚度不小于 S46: Use the vapor deposition method to deposit an inorganic dielectric layer such as SiNx, TiO2 or Al2O3 on the front side or a spin-coating organic dielectric layer on the substrate, that is, to form a
本发明采用双极静电吸头并利用静电吸附力对微型发光二极管进行巨量转移,并简化静电吸头与静电发生器的连接结构,从而减小吸头与微型发光二极管表面的间隙(gap),利用静电吸头高效的对微型器件进行转移。The invention adopts a bipolar electrostatic suction head and utilizes electrostatic adsorption force to transfer a large amount of micro-LEDs, and simplifies the connection structure of the electrostatic suction head and the electrostatic generator, thereby reducing the gap between the suction head and the surface of the micro-LEDs , the use of electrostatic suction heads to efficiently transfer micro-devices.
以上详细描述了本发明的优选实施方式,但是本发明并不限于上述实施方式中的具体细节,在本发明的技术构思范围内,可以对本发明的技术方案进行多种等同变换(如数量、形状、位置等),这些等同变换均属于本发明的保护范围。The preferred embodiments of the present invention are described in detail above, but the present invention is not limited to the specific details of the above-mentioned embodiments. Within the scope of the technical concept of the present invention, various equivalent transformations (such as quantity, shape, etc.) can be performed on the technical solutions of the present invention. , position, etc.), these equivalent transformations all belong to the protection scope of the present invention.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010127004.1A CN111293070A (en) | 2020-02-28 | 2020-02-28 | Bipolar electrostatic suction head of miniature light-emitting diode and array thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010127004.1A CN111293070A (en) | 2020-02-28 | 2020-02-28 | Bipolar electrostatic suction head of miniature light-emitting diode and array thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111293070A true CN111293070A (en) | 2020-06-16 |
Family
ID=71024611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010127004.1A Pending CN111293070A (en) | 2020-02-28 | 2020-02-28 | Bipolar electrostatic suction head of miniature light-emitting diode and array thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111293070A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112271156A (en) * | 2020-09-28 | 2021-01-26 | 南京中电熊猫液晶显示科技有限公司 | Electrostatic transfer head and manufacturing method thereof |
CN113745130A (en) * | 2021-08-23 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | a transfer mechanism |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1960830A (en) * | 2004-03-31 | 2007-05-09 | 应用材料公司 | Methods and apparatus for transferring conductive pieces during semiconductor device fabrication |
US20080237819A1 (en) * | 2005-11-25 | 2008-10-02 | Robert Wieland | Bipolar Carrier Wafer and Mobile Bipolar Electrostatic Wafer Arrangement |
JP2012138440A (en) * | 2010-12-27 | 2012-07-19 | Covalent Materials Corp | Electrostatic chuck and method of manufacturing the same |
US20140355168A1 (en) * | 2013-06-04 | 2014-12-04 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
CN104471698A (en) * | 2012-07-06 | 2015-03-25 | 勒克斯维科技公司 | Compliant bipolar micro device transfer head with silicon electrodes |
US20150364424A1 (en) * | 2014-06-17 | 2015-12-17 | LuxVue Technology Corporation | Compliant electrostatic transfer head with spring support layer |
-
2020
- 2020-02-28 CN CN202010127004.1A patent/CN111293070A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1960830A (en) * | 2004-03-31 | 2007-05-09 | 应用材料公司 | Methods and apparatus for transferring conductive pieces during semiconductor device fabrication |
US20080237819A1 (en) * | 2005-11-25 | 2008-10-02 | Robert Wieland | Bipolar Carrier Wafer and Mobile Bipolar Electrostatic Wafer Arrangement |
JP2012138440A (en) * | 2010-12-27 | 2012-07-19 | Covalent Materials Corp | Electrostatic chuck and method of manufacturing the same |
CN104471698A (en) * | 2012-07-06 | 2015-03-25 | 勒克斯维科技公司 | Compliant bipolar micro device transfer head with silicon electrodes |
US20140355168A1 (en) * | 2013-06-04 | 2014-12-04 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
CN105263854A (en) * | 2013-06-04 | 2016-01-20 | 勒克斯维科技公司 | Micro pick up array with compliant contact |
US20150364424A1 (en) * | 2014-06-17 | 2015-12-17 | LuxVue Technology Corporation | Compliant electrostatic transfer head with spring support layer |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112271156A (en) * | 2020-09-28 | 2021-01-26 | 南京中电熊猫液晶显示科技有限公司 | Electrostatic transfer head and manufacturing method thereof |
CN112271156B (en) * | 2020-09-28 | 2022-09-13 | 南京中电熊猫液晶显示科技有限公司 | Electrostatic transfer head and manufacturing method thereof |
CN113745130A (en) * | 2021-08-23 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | a transfer mechanism |
CN113745130B (en) * | 2021-08-23 | 2023-10-17 | 深圳市华星光电半导体显示技术有限公司 | Transfer mechanism |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10403859B2 (en) | Organic light-emitting device with graphene electrode layer and method of manufacturing the same | |
JP5548428B2 (en) | Method for producing transparent conductive film and transparent conductive film | |
JP6627863B2 (en) | Transparent conductive layer laminating film, method for producing the same, and transparent conductive film | |
CN111293070A (en) | Bipolar electrostatic suction head of miniature light-emitting diode and array thereof | |
US20160336304A1 (en) | Method for transferring micro devices and method for manufacturing display panel | |
JP5931790B2 (en) | Thermoelectric module | |
CN103972422B (en) | Packaging structure and method for OLED device and display device | |
US11552058B2 (en) | Method of transferring micro light emitting diodes and display panel | |
JP2014065928A (en) | Vapor deposition mask manufacturing method | |
CN105118927A (en) | OLED film packaging structure, packaging method and display device | |
TW201530385A (en) | Touch sensor | |
CN108884555A (en) | Vapor deposition mask, method for manufacturing vapor deposition mask, and method for manufacturing organic semiconductor element | |
CN101009207A (en) | Making method of pliable active component array base board | |
CN111987036A (en) | Micro device transfer head, manufacturing method thereof and micro light emitting diode transfer method | |
CN108845715A (en) | The manufacturing method of touch control display apparatus and touch control display apparatus | |
CN107003776A (en) | Membrane contact sensor and preparation method thereof | |
TW201733794A (en) | Transparent conductive layer laminating film, the manufacturing method and transparent conductive film | |
CN104952741A (en) | Electric circuit on flexible substrate | |
JP2013539216A (en) | Board sheet | |
CN106716663A (en) | Flexible substrate and method of manufacturing same | |
CN104966791A (en) | A mask plate and its manufacturing method, OLED device packaging method | |
JP2017091875A (en) | Transparent electrode, laminate for transparent electrode, and production method thereof | |
US20230028998A1 (en) | Element transferring method and electronic panel manufacturing method using the same | |
CN110416379A (en) | A kind of miniature light-emitting diode device, display and manufacturing method thereof | |
JP2015217641A (en) | Suspend metal mask and method for producing suspend metal mask |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200911 Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Applicant after: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Address before: Nanjing Crystal Valley Road in Qixia District of Nanjing City Tianyou 210033 Jiangsu province No. 7 Applicant before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Applicant before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Applicant before: NANJING HUADONG ELECTRONICS INFORMATION & TECHNOLOGY Co.,Ltd. |
|
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200616 |