CN111278174A - A heating device and LTE equipment for LTE-SIM card - Google Patents
A heating device and LTE equipment for LTE-SIM card Download PDFInfo
- Publication number
- CN111278174A CN111278174A CN202010043252.8A CN202010043252A CN111278174A CN 111278174 A CN111278174 A CN 111278174A CN 202010043252 A CN202010043252 A CN 202010043252A CN 111278174 A CN111278174 A CN 111278174A
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- heating
- sim card
- lte
- heating device
- circuit
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 86
- 238000012544 monitoring process Methods 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L12/00—Data switching networks
- H04L12/02—Details
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
- H04W88/02—Terminal devices
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- Control Of Resistance Heating (AREA)
Abstract
The invention discloses a heating device for an LTE-SIM card and LTE equipment, wherein the heating device comprises: the temperature monitoring module is configured to monitor the ambient temperature of the SIM card and send a trigger signal to the heating control circuit when the ambient temperature is lower than a low-temperature threshold; a heating control circuit configured to power on the heating circuit upon receipt of a trigger signal; a heating circuit configured to be able to heat an ambient temperature of the SIM card when the power is turned on. According to the heating device for the LTE-SIM card and the LTE equipment, the SIM card of the equipment can be always kept in a proper working environment through the ambient temperature detection and the proper heating control, the work of the SIM card and the high reliability of the whole equipment are ensured, and meanwhile, the heating device for the LTE-SIM card and the LTE equipment have the advantages of simple and reliable circuit and low cost.
Description
Technical Field
The invention relates to a heating device for an LTE-SIM card and LTE equipment.
Background
With the rapid development of information technology and the diversification of application requirements, the demand for wireless internet access in the commercial field is higher and higher, the pursuit for reliability and low cost is increased day by day, and the registration failure problem of the LTE-SIM card sometimes occurs in alpine regions.
Therefore, it is desirable to design a new design that can effectively heat the SIM card in a low temperature environment while achieving both cost and high reliability.
Disclosure of Invention
The invention provides a novel heating device for an LTE-SIM card and LTE equipment, and aims to overcome the defect that the reliability of the equipment is affected because the SIM card in the existing LTE equipment possibly fails in an environment with too low temperature.
The invention solves the technical problems by adopting the following technical scheme:
the invention provides a heating device for an LTE-SIM card, which is characterized by comprising:
the temperature monitoring module is configured to monitor the ambient temperature of the SIM card and send a trigger signal to the heating control circuit when the ambient temperature is lower than a low-temperature threshold;
the heating control circuit is configured to be capable of powering on the heating circuit when receiving the trigger signal;
the heating circuit is configured to heat the ambient temperature of the SIM card when the power is turned on.
According to some embodiments of the present invention, the heating control circuit includes a transistor and a MOS transistor, and the MOS transistor is configured to control the heating circuit to turn on and off a power supply by turning on or off the transistor;
the triode is configured to be capable of being switched to a conducting state when receiving the trigger signal, and is capable of controlling the conduction or non-conduction of the MOS tube through self conduction or non-conduction.
According to some embodiments of the present invention, the base of the transistor is configured to receive the trigger signal, the collector of the transistor is connected to the gate of the MOS transistor, the source and the drain of the MOS transistor are respectively connected to the positive power supply and one end of the heating circuit, and the other end of the heating circuit is grounded.
According to some embodiments of the invention, the heating device further comprises a microprocessor, and the temperature monitoring module is configured to instruct the microprocessor to send the trigger signal to the base of the triode when the monitored ambient temperature is lower than the low temperature threshold.
According to some embodiments of the invention, the triode is a MMBT3904 triode and the MOS transistor is a PPMT30V 4P-channel MOS transistor.
According to some embodiments of the invention, the microprocessor is electrically connected to the base of the transistor, and the trigger signal is a high level signal.
According to some embodiments of the invention, the heating circuit is provided with a plurality of heating resistors, and the heating resistors are attached to the periphery and/or the vicinity of the back of the SIM card.
According to some embodiments of the present invention, the temperature monitoring module employs a temperature detecting chip of TMP75AIDG4 model, and the temperature detecting chip is disposed on one side of the SIM card.
According to some embodiments of the invention, the temperature monitoring module is further configured to be able to issue a shutdown signal to the heating control circuit when the ambient temperature reaches the low temperature threshold;
the heating control circuit is configured to cause the heating circuit to disconnect power upon receipt of the shutdown signal.
The invention also provides LTE equipment which comprises the SIM card and also comprises the heating device for the LTE-SIM card.
On the basis of the common knowledge in the field, the above preferred conditions can be combined randomly to obtain the preferred embodiments of the invention.
The positive progress effects of the invention are as follows:
according to the heating device for the LTE-SIM card and the LTE equipment, the SIM card of the equipment can be always kept in a proper working environment through the ambient temperature detection and the proper heating control, the work of the SIM card and the high reliability of the whole equipment are ensured, and meanwhile, the heating device can be suitable for the construction of a universal and low-cost electronic device, so that the heating control can also have the characteristics of simplicity, reliability and low cost.
Drawings
Fig. 1 is a circuit diagram of a heating device for an LTE-SIM card according to a preferred embodiment of the present invention.
Description of the reference numerals
1: temperature detection chip 2: trigger signal
3: and a triode 4: MOS tube
5: heating circuit
Detailed Description
The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, is intended to be illustrative, and not restrictive, and any other similar items may be considered within the scope of the present invention.
In the following detailed description, directional terms, such as "left", "right", "upper", "lower", "front", "rear", and the like, are used with reference to the orientation as illustrated in the drawings. The components of various embodiments of the present invention can be positioned in a number of different orientations and the directional terminology is used for purposes of illustration and is in no way limiting.
Referring to fig. 1, the heating apparatus for an LTE-SIM card according to the preferred embodiment of the present invention includes: the temperature monitoring module is configured to monitor the ambient temperature of the SIM card and send a trigger signal 2 to the heating control circuit when the ambient temperature is lower than a low-temperature threshold; a heating control circuit configured to be able to power on the heating circuit 5 upon receipt of the trigger signal 2; and a heating circuit 5 configured to heat an ambient temperature of the SIM card when the power is turned on.
As shown in fig. 1, according to some preferred embodiments of the present invention, the heating control circuit may include a transistor 3 and a MOS transistor 4. The MOS transistor 4 is configured to control the heating circuit 5 to turn on and off the power supply by turning on or off itself. The transistor 3 is configured to be capable of being switched to a conducting state when receiving the trigger signal 2, and is capable of controlling the conduction or non-conduction of the MOS transistor 4 through self-conduction or non-conduction. The temperature monitoring module can use a temperature detection chip 1 such as a model TMP75AIDG 4.
As shown in fig. 1, according to some preferred embodiments of the present invention, a base of the transistor 3 is configured to receive the trigger signal 2, a collector of the transistor 3 is connected to a gate of the MOS transistor 4, a source and a drain of the MOS transistor 4 are respectively connected to a positive power supply and one end of the heating circuit 5, and the other end of the heating circuit 5 is grounded.
According to some preferred embodiments of the present invention, the heating device further comprises a microprocessor (such as a CPU, not shown in the figures) and the temperature monitoring module is configured to instruct the microprocessor to send a trigger signal 2 to the base of the transistor 3 when the monitored ambient temperature is below the low temperature threshold.
According to some preferred embodiments of the present invention, in the example shown in fig. 1, transistor 3 is a MMBT3904 transistor 3, and MOS transistor 4 is a PPMT30V 4P-channel MOS transistor 4. Preferably, the microprocessor is electrically connected to the base of the transistor 3, and the trigger signal 2 is a high level signal.
According to some preferred embodiments of the present invention, the temperature monitoring module is further configured to send a shutdown signal to the heating control circuit when the ambient temperature reaches a low temperature threshold; the heating control circuit is configured to cause the heating circuit 5 to disconnect the power supply upon receipt of the off signal.
In the illustrated example, the general temperature control logic and temperature control process may be as follows, for example. When the ambient temperature is lower than a certain temperature value, the temperature detecting chip 1 informs the CPU of a high level signal, so that the transistor 4 (also denoted as VT10 in the figure) and the transistor iii (also denoted as VT11 in the figure) are turned on, and the heating resistor in the heating circuit 5 is powered by VCC-12V to generate heat. When the required ambient temperature is detected, the CPU is informed to turn off the heating circuit 5 and turn on the power supply circuit of the SIM card, so that the SIM starts to work at a comfortable ambient temperature to ensure the high reliability of the work of the SIM.
According to some preferred embodiments of the present invention, the heating circuit 5 is provided with a plurality of heating resistors, the heating resistors are attached to the periphery and/or the vicinity of the back of the SIM card, and the temperature detecting chip 1 can be disposed on one side of the SIM card. The heating circuit 5 may be provided with 8 100 ohm resistors as shown in fig. 1, and of course, the heating circuit 5 may be configured in different manners or numbers of resistors according to actual needs.
According to some preferred embodiments of the present invention, the heating device as above can be applied in LTE equipment. Through some practical tests, a severe environment temperature test (-40-65 ℃) is carried out on an enterprise router device by using the circuit, 200 high-low temperature environment cycles are carried out on the router device, and the test result reaches 100% of SIM card registration with high reliability.
According to the heating device for the LTE-SIM card in the preferred embodiment of the invention, the SIM card of the equipment can be always kept in a proper working environment through the ambient temperature detection and the proper heating control, the work of the SIM card and the high reliability of the whole equipment are ensured, and meanwhile, the heating device can be built and finished by only adopting a universal and low-cost electronic device basically as above, and is simple, reliable and low in cost.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that these are by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.
Claims (10)
1. A heating device for an LTE-SIM card, characterized in that the heating device comprises:
the temperature monitoring module is configured to monitor the ambient temperature of the SIM card and send a trigger signal to the heating control circuit when the ambient temperature is lower than a low-temperature threshold;
the heating control circuit is configured to be capable of powering on the heating circuit when receiving the trigger signal;
the heating circuit is configured to heat the ambient temperature of the SIM card when the power is turned on.
2. The heating device for the LTE-SIM card of claim 1, wherein the heating control circuit comprises a triode and a MOS transistor, the MOS transistor is configured to control the heating circuit to switch on and off the power supply by turning on or off the MOS transistor;
the triode is configured to be capable of being switched to a conducting state when receiving the trigger signal, and is capable of controlling the conduction or non-conduction of the MOS tube through self conduction or non-conduction.
3. The heating device of claim 1, wherein a base of the transistor is configured to receive the trigger signal, a collector of the transistor is connected to a gate of the MOS transistor, a source and a drain of the MOS transistor are respectively connected to a positive power supply and one end of the heating circuit, and the other end of the heating circuit is grounded.
4. The heating apparatus for an LTE-SIM card of claim 3, wherein the heating apparatus further comprises a microprocessor, the temperature monitoring module configured to instruct the microprocessor to issue the trigger signal to the base of the transistor when the monitored ambient temperature is below the low temperature threshold.
5. The heating device for the LTE-SIM card of claim 4, wherein the triode is a MMBT3904 triode, and the MOS transistor is a P-channel MOS transistor of PPMT30V 4.
6. The heating device for an LTE-SIM card of claim 4, wherein the microprocessor is electrically connected to the base of the triode, and the trigger signal is a high level signal.
7. The heating device for the LTE-SIM card of claim 1, wherein the heating circuit is provided with a plurality of heating resistors attached around and/or near the back of the SIM card.
8. The heating device of claim 1, wherein the temperature monitoring module employs a temperature detecting chip of TMP75AIDG4 model, and the temperature detecting chip is disposed on one side of the SIM card.
9. The heating apparatus for an LTE-SIM card of claim 1, wherein said temperature monitoring module is further configured to be able to issue a shutdown signal to a heating control circuit when said ambient temperature reaches said low temperature threshold;
the heating control circuit is configured to cause the heating circuit to disconnect power upon receipt of the shutdown signal.
10. An LTE device comprising a SIM card, characterized in that it further comprises a heating means for an LTE-SIM card according to any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010043252.8A CN111278174A (en) | 2020-01-15 | 2020-01-15 | A heating device and LTE equipment for LTE-SIM card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010043252.8A CN111278174A (en) | 2020-01-15 | 2020-01-15 | A heating device and LTE equipment for LTE-SIM card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111278174A true CN111278174A (en) | 2020-06-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010043252.8A Withdrawn CN111278174A (en) | 2020-01-15 | 2020-01-15 | A heating device and LTE equipment for LTE-SIM card |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111278174A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110163082A1 (en) * | 2007-10-01 | 2011-07-07 | Timothy Russell Mullen | Wireless electric heat trace and vibration control and monitoring system |
| CN202738131U (en) * | 2012-06-06 | 2013-02-13 | 北京昆仑纵横科技发展有限公司 | Low-temperature-startup film heating device and apparatus using same |
| CN203301467U (en) * | 2013-02-07 | 2013-11-20 | 深圳市有方科技有限公司 | Wireless communication terminal having SIM card temperature measuring and heating function |
| CN204087023U (en) * | 2013-12-30 | 2015-01-07 | 深圳市广和通实业发展有限公司 | SIM card heating system and communicator thereof |
-
2020
- 2020-01-15 CN CN202010043252.8A patent/CN111278174A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110163082A1 (en) * | 2007-10-01 | 2011-07-07 | Timothy Russell Mullen | Wireless electric heat trace and vibration control and monitoring system |
| CN202738131U (en) * | 2012-06-06 | 2013-02-13 | 北京昆仑纵横科技发展有限公司 | Low-temperature-startup film heating device and apparatus using same |
| CN203301467U (en) * | 2013-02-07 | 2013-11-20 | 深圳市有方科技有限公司 | Wireless communication terminal having SIM card temperature measuring and heating function |
| CN204087023U (en) * | 2013-12-30 | 2015-01-07 | 深圳市广和通实业发展有限公司 | SIM card heating system and communicator thereof |
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Application publication date: 20200612 |
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| WW01 | Invention patent application withdrawn after publication |