CN111261665A - Quantum dot light-emitting device, preparation method thereof and display device - Google Patents
Quantum dot light-emitting device, preparation method thereof and display device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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Abstract
The invention provides a quantum dot light-emitting device, a preparation method thereof and a display device, relates to the technical field of display, and is used for solving the problem of color crosstalk of the light-emitting device caused by secondary light emission generated by absorption of exciting light of quantum dots by other adjacent quantum dots. The quantum dot light-emitting device comprises a substrate, a backlight source layer arranged on the substrate, at least one backlight source and a quantum dot packaging layer arranged on the light-emitting side of the backlight source layer, wherein the quantum dot packaging layer at least comprises a first quantum dot region, a second quantum dot region and a light-reflecting isolation structure arranged between the first quantum dot region and the second quantum dot region, a first quantum dot is arranged in the first quantum dot region, and a second quantum dot is arranged in the second quantum dot region; the light-reflecting isolation structure is used for isolating light transmission between the first quantum dot region and the second quantum dot region.
Description
Technical Field
The invention relates to the technical field of display, in particular to a quantum dot light-emitting device, a preparation method thereof and a display device.
Background
Compared with the traditional Light-Emitting material of an Organic Light-Emitting Diode (OLED for short), the quantum dot material has narrower Light-Emitting spectrum, and further has better color expression, including color gamut, saturation and the like.
In the prior art, the conventional quantum dot Light Emitting is usually implemented by using a Light-Emitting Diode (LED) as a backlight and combining a liquid crystal pixel and a quantum dot filter layer. Fig. 1 is a schematic structural view of a quantum dot light emitting device in the related art. As shown in fig. 1, the transparent quantum dot encapsulation layer 5 of the quantum dot light emitting device in the related art may include quantum dot regions of different colors. The light emitting device has a problem of display cross color.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a quantum dot light-emitting device, a preparation method thereof and a display device, so as to solve the problem of color cross display of the light-emitting device caused by secondary light emission caused by absorption of exciting light of quantum dots by other adjacent quantum dots.
In a first aspect, the present invention provides a quantum dot light emitting device comprising:
a substrate;
a backlight source layer disposed on the substrate, including at least one backlight source;
the quantum dot packaging layer is arranged on the light emitting side of the backlight source layer and at least comprises a first quantum dot region, a second quantum dot region and a light reflecting isolation structure arranged between the first quantum dot region and the second quantum dot region, wherein first quantum dots are arranged in the first quantum dot region, and second quantum dots are arranged in the second quantum dot region;
the light-reflecting isolation structure is used for isolating light transmission between the first quantum dot region and the second quantum dot region.
In one possible design, the light reflecting isolation structure includes: the packaging glue layer and the light reflecting layer are arranged on the outer side wall of the packaging glue layer.
In one possible design, the light reflecting isolation structure has a triangular, trapezoidal or convex or concave pattern on two opposite sides in the direction parallel to the substrate.
In one possible design, the backlight source in the backlight source layer is a blue backlight source, the first quantum dots are red quantum dots, and the second quantum dots are green quantum dots.
In one possible design, the quantum dot encapsulation layer further includes a transmissive region disposed adjacent to the second quantum dot region, the transmissive region being configured to directly transmit blue light emitted by the blue backlight;
the light-reflecting isolation structure is arranged between the second quantum dot region and the transmission region and used for isolating light transmission between the second quantum dot region and the transmission region.
In one possible design, the blue backlight layer includes a first blue OLED backlight layer, a second blue OLED backlight layer, and a third blue OLED backlight layer disposed on the substrate;
the first blue light OLED backlight source layer is used for providing a light source for the first quantum dot region, so that the red quantum dots can emit red light under the excitation of a blue light source;
the second blue OLED backlight source layer is used for providing a light source for the second quantum dot region, so that the green quantum dots emit green light under the excitation of a blue light source;
the third blue OLED backlight source layer is used for providing a light source for the transmission area, so that the blue light source directly penetrates through the transmission area to emit blue light.
In one possible design, the backlight source layer includes a plurality of the backlight sources, the blue backlight source layer further includes a pixel defining layer disposed between adjacent ones of the backlight sources, and an encapsulation protective layer disposed on the backlight sources and the pixel defining layer;
the light-reflecting isolation structure is arranged on the packaging protection layer.
In a second aspect, the present invention also provides a display device, comprising: the quantum dot light emitting device of the first aspect.
In a third aspect, the present invention further provides a method for manufacturing a quantum dot light emitting device, including:
providing a substrate;
forming a backlight on the substrate;
forming a light-reflecting isolation structure on the light-emitting side of the backlight source;
fill quantum dot packaging layer between the isolation structure of reflecting light, at least adjacent first quantum dot region and the second quantum dot region of being provided with in the quantum dot packaging layer, be provided with first quantum dot in the first quantum dot region, be provided with the second quantum dot in the second quantum dot region, the isolation structure of reflecting light is used for keeping apart first quantum dot region with light propagation between the second quantum dot region.
In one possible design, forming a reflective spacer structure on a light exit side of the backlight includes:
forming a packaging colloid layer on the light-emitting side of the backlight source;
and a reflective layer is vapor-plated on the outer side wall of the packaging colloid layer to form a reflective isolation structure.
According to the quantum dot light-emitting device, the preparation method thereof and the display device, the first quantum dot in the first quantum dot region and the second quantum dot in the second quantum dot region randomly emit exciting light in all directions under the excitation of the blue backlight source, wherein part of the exciting light can be emitted to the adjacent quantum dot region, and the part of the exciting light can be reflected through the reflective isolation structure arranged between the first quantum dot region and the second quantum dot region of the quantum dot packaging layer, so that the light transmission between the first quantum dot region and the second quantum dot region is isolated, and the cross color problem caused by secondary light emission due to the fact that the exciting light with shorter wavelength is absorbed by the quantum dot with lower excitation energy level is effectively avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural view of a quantum dot light emitting device in the prior art;
fig. 2 is a schematic structural view of a quantum dot light-emitting device according to a first exemplary embodiment of the present invention;
fig. 3 is a schematic structural view of a quantum dot light-emitting device according to a second exemplary embodiment of the present invention;
fig. 4 is a schematic structural view of a quantum dot light-emitting device according to a third exemplary embodiment of the present invention;
fig. 5 is a schematic structural view of a quantum dot light-emitting device according to a fourth exemplary embodiment of the present invention;
fig. 6 is a schematic structural view of a quantum dot light-emitting device according to a fifth exemplary embodiment of the present invention;
fig. 7 is a schematic structural view of a quantum dot light-emitting device according to a sixth exemplary embodiment of the present invention;
fig. 8 is a schematic flow diagram illustrating a method of fabricating a quantum dot light emitting device according to an exemplary embodiment of the invention.
Description of reference numerals:
1-a substrate;
21-a first blue OLED backlight;
22-a second blue OLED backlight;
23-a third blue OLED backlight;
3-a pixel definition layer;
4-packaging a protective layer;
5-a quantum dot encapsulation layer;
61-first quantum dots;
62-second quantum dots;
63-a third quantum dot;
7-a reflective isolation structure;
71-encapsulating the colloidal layer;
72-a light reflecting layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims, as well as in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 2 is a schematic structural view of a quantum dot light emitting device according to a first exemplary embodiment of the present invention. As shown in fig. 2, the quantum dot light emitting device provided in this embodiment includes a substrate 1, a backlight source layer disposed on the substrate 1, and a quantum dot encapsulation layer 5 disposed on the light emitting side of the backlight source layer, wherein the backlight source layer includes at least one backlight source.
Specifically, the backlight may be a blue backlight or a backlight of another color, and the backlight is specifically described below as a blue backlight, but it should be noted that the color of the backlight layer is not particularly limited in this embodiment.
Among them, the substrate 1 may be a TFT backplane formed on a substrate. In one possible design, the blue backlight sources may include a first blue OLED backlight source 21, a second blue OLED backlight source 22, and a third blue OLED backlight source 23. Specifically, the first Blue OLED backlight 21, the second Blue OLED backlight 22, and the third Blue OLED backlight 23 may be respectively used as driving light sources of Red, Green, and Blue (RGB).
The quantum dot packaging layer 5 is disposed on the light-emitting side of the blue backlight, and the quantum dot packaging layer 5 at least includes a first quantum dot region, a second quantum dot region, and a reflective isolation structure 7 disposed between the first quantum dot region and the second quantum dot region, where the first quantum dot region is provided with a first quantum dot 61, the second quantum dot region is provided with a second quantum dot 62, and the reflective isolation structure 7 is used for isolating light transmission between the first quantum dot region and the second quantum dot region.
Notably, in one possible design, the excitation energy level of the second quantum dot 62 is greater than the excitation energy level of the first quantum dot 61, and the wavelength of the excitation light emitted by the second quantum dot 62 is less than the wavelength of the excitation light emitted by the first quantum dot 61. While with reference to fig. 2, the specific operation principle of the partition structure is described as follows, the first quantum dot 61 is a red quantum dot, and the second quantum dot 62 is a green quantum dot, but the setting of the first quantum dot 61 as a red quantum dot and the setting of the second quantum dot 62 as a green quantum dot is only an exemplary embodiment of the actual design, and the specific types of the first quantum dot 61 and the second quantum dot 62 are not limited in this embodiment.
After the green quantum dots in the second quantum dot region absorb the blue light emitted by the blue backlight source, the green light is scattered randomly in all directions, wherein a part of the green light is scattered towards the first quantum dot region. However, since the reflective isolation structure 7 is disposed between the first quantum dot region and the second quantum dot region, the green light emitted toward the first quantum dot region is blocked by the reflective isolation structure 7, and is emitted from the green light emitting region corresponding to the second quantum dot region after being reflected on the surface of the reflective isolation structure 7, so as to block the lateral propagation of the excitation light of the second quantum dot 62, thereby effectively avoiding the cross color caused by the fact that the green light emitted by the green quantum dot is absorbed by the red quantum dot for the second time and becomes red, thereby reducing the crosstalk of the green light to the adjacent red quantum dot, and effectively increasing the purity of the green light.
In addition, after the red quantum dots in the first quantum dot region absorb the blue light emitted by the blue backlight source, the red light is scattered randomly in all directions, wherein a part of the red light is scattered towards the first quantum dot region. Because the light-reflecting isolation structure 7 is arranged between the first quantum dot region and the second quantum dot region, the red light emitted to the second quantum dot region is also blocked by the light-reflecting isolation structure 7, and is emitted from the red light emitting region corresponding to the first quantum dot region after being reflected on the surface of the light-reflecting isolation structure 7, so that the transverse propagation of the exciting light of the first quantum dot 61 is blocked.
Alternatively, for the first quantum dot 61 and the second quantum dot 62, it may be a nanoparticle composed of II-VI or III-V elements, which may emit fluorescence after being excited, and the spectrum of the emitted light may be controlled by changing the size of the quantum dot. Specific examples are silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots, indium arsenide quantum dots, and the like.
In addition, as the method for preparing the first quantum dot 61 and the second quantum dot 62, a molecular beam epitaxy method, a metal organic chemical vapor deposition method, a self-organized growth, a colloid chemistry, and the like may be used, and among them, quantum dots having different sizes may be prepared according to different chemical conditions.
In this embodiment, the first quantum dot in the first quantum dot region and the second quantum dot in the second quantum dot region randomly emit excitation light in all directions under excitation of the blue backlight source, wherein a portion of the excitation light is emitted to the adjacent quantum dot region, and the portion of the excitation light can be reflected by the reflective isolation structure disposed between the first quantum dot region and the second quantum dot region of the quantum dot encapsulation layer, so as to isolate light propagation between the first quantum dot region and the second quantum dot region, thereby effectively avoiding a cross-color problem caused by secondary light emission due to absorption of the excitation light with a shorter wavelength by the quantum dot with a lower excitation level.
With reference to fig. 2, in order to efficiently utilize the device space, the encapsulant layer 71 may be formed by molding, wherein the material of the encapsulant layer 71 may be OCA optical adhesive, and the material of the encapsulant layer 71 is not specifically limited in this embodiment. And then forming a reflective layer 72 on the outer side wall of the encapsulation colloid layer 71, wherein the reflective layer 72 may be a metal layer, and may be vapor-deposited on the outer side wall of the encapsulation colloid layer 71 by a vapor deposition method, so as to realize the spatial separation of the first quantum dot region and the second quantum dot region. Then, an encapsulation adhesive doped with the first quantum dots 61 is filled on one side of the light reflecting isolation structure 7 to form a first quantum dot region, and an encapsulation adhesive doped with the second quantum dots 62 is filled on the other side of the light reflecting isolation structure 7 to form a second quantum dot region.
In addition, when the first quantum dots 61 are configured as red quantum dots and the second quantum dots 62 are configured as green quantum dots, in order to realize the RGB light emitting manner, a transmission region configured adjacent to the second quantum dot region is further disposed in the quantum dot encapsulation layer 5, and it is understood that no quantum dot is disposed in the transmission region, wherein the transmission region is configured to directly transmit blue light emitted by the blue backlight.
With reference to fig. 2, the following description is made with reference to a blue OLED backlight as a light source in an RGB light emitting manner, where it is worth to be noted that the blue OLED backlight is only used for an exemplary illustration, and is not specifically limited to the light source in the RGB light emitting manner, for example, the light source in the RGB light emitting manner may also be a Micro LED. In particular, the blue backlight may include a first blue OLED backlight 21, a second blue OLED backlight 22, and a third blue OLED backlight 23 disposed on the substrate 1. The first blue OLED backlight 21 is configured to provide a light source for the first quantum dot region, so that the red quantum dot emits red light under excitation of the blue light source, the second blue OLED backlight 22 is configured to provide a light source for the second quantum dot region, so that the green quantum dot emits green light under excitation of the blue light source, and the third blue OLED backlight 23 is configured to provide a light source for the transmission region, so that the blue light source directly penetrates through the transmission region to emit blue light. It should be noted that the first blue OLED backlight 21, the second blue OLED backlight 22, and the third blue OLED backlight 23 may be separately controlled, and the light sources in the RGB light emitting manner are all set as blue light sources, so that only one-time uniform evaporation molding is required in the manufacturing process of the light source of the light emitting device.
In addition, the backlight source layer includes a plurality of backlight sources, and the backlight source layer further includes a pixel defining layer 3 disposed between the backlight sources, and a packaging protection layer 4 disposed on the backlight sources and the pixel defining layer 3, and the light reflecting isolation structures 7 are formed on the packaging protection layer after the packaging protection layer 4 is completed.
On the basis of the embodiment shown in fig. 2, fig. 3 is a schematic structural diagram of a quantum dot light-emitting device according to a second exemplary embodiment of the present invention. As shown in fig. 3, the light-reflecting isolation structure 7 is also disposed between the second quantum dot region and the transmissive region in the quantum dot light-emitting device provided in this embodiment, and the light-reflecting isolation structure 7 is used for isolating light propagation between the second quantum dot region and the transmissive region.
When the first quantum dots 61 in the first quantum dot region are set as red quantum dots to emit red light, the second quantum dots 62 in the second quantum dot region are set as green quantum dots to emit green light, and no quantum dots are set in the transmission region to emit blue light, in order to avoid the blue light in the transmission region from entering the second quantum dot region to excite the green quantum dots to emit light, a light-reflecting isolation structure 7 may also be disposed between the second quantum dot region and the transmission region, and the light-reflecting isolation structure 7 is used to isolate light transmission between the second quantum dot region and the transmission region.
With continued reference to fig. 3, the shape of the longitudinal section of the light-reflecting isolation structure 7 may be configured as a triangle, wherein, it is understood that the direction of the longitudinal section is perpendicular to the substrate direction and perpendicular to the boundary between the first quantum dot region and the second quantum dot region, the light-reflecting isolation structure 7 may be a triangular prism, when the green quantum dots in the second quantum dot region absorb the blue light emitted by the blue backlight source, the green light is scattered in all directions randomly, wherein a part of the green light is emitted onto the side surface of the triangular prism corresponding to the light-reflecting isolation structure 7 and is reflected by the side surface, and then is emitted from the green light-emitting region corresponding to the second quantum dot region, so as to block the lateral propagation of the green light, thereby reducing the crosstalk of the green light to the adjacent red quantum dots.
And when the blue light in the transmission area is emitted to the side face of the triangular prism corresponding to the reflective isolation structure 7, the blue light is emitted from the blue light emitting area corresponding to the transmission area after being reflected by the side face so as to cut off the transverse transmission of the blue light, thereby avoiding the crosstalk of the blue light to the adjacent green quantum dots.
Fig. 4 is a schematic structural view of a quantum dot light emitting device according to a third exemplary embodiment of the present invention. As shown in fig. 4, in order to make the blue light emitted by the quantum dot light emitting device have higher purity, a third quantum dot region may be further disposed to replace the transmission region in the embodiment shown in fig. 3, and a third quantum dot 63 is disposed in the third quantum dot region, where the third quantum dot may be a blue quantum dot, and the third blue OLED23 is configured to provide a light source for the third quantum dot region, so that the blue quantum dot emits blue light under excitation of the blue light source.
Fig. 5 is a schematic structural view of a quantum dot light emitting device according to a fourth exemplary embodiment of the present invention. As shown in fig. 5, the shape of the longitudinal cross section of the light reflecting and isolating structure in the quantum dot light emitting device provided in this embodiment may be set to be a trapezoid, wherein it is understood that the direction of the longitudinal cross section is perpendicular to the substrate direction and perpendicular to the boundary between the first quantum dot region and the second quantum dot region, the light reflecting and isolating structure 7 may be a terrace, and green light is scattered in all directions randomly after the green quantum dots in the second quantum dot region absorb blue light emitted by the blue backlight source, wherein a part of the green light is emitted onto the side surface of the terrace corresponding to the light reflecting and isolating structure 7, and after being reflected by the side surface, the green light corresponding to the second quantum dot region is emitted out to block the lateral propagation of the green light, so as to reduce the crosstalk of the green light emitting region to the red quantum dots.
And when the blue light in the transmission area is emitted to the side face of the terrace corresponding to the reflective isolation structure 7, the blue light is emitted from the blue light emitting area corresponding to the transmission area after being reflected by the side face so as to cut off the transverse transmission of the blue light, thereby avoiding the crosstalk of the blue light to the adjacent green quantum dots.
Fig. 6 is a schematic structural view of a quantum dot light emitting device according to a fifth exemplary embodiment of the present invention. As shown in fig. 6, the longitudinal sectional shape of the light reflecting spacer structure 7 in the quantum dot light emitting device provided in this embodiment may also be configured to have a convex pattern on two opposite sides along the direction parallel to the substrate, i.e., a closed figure with the left and right sides protruding outward, wherein it is understood that the direction of the longitudinal section is perpendicular to the substrate direction and to the boundary line of the first quantum dot region and the second quantum dot region, the side wall of the light reflecting isolation structure 7 is an outwardly convex arc surface, when the green quantum dots in the second quantum dot region absorb the blue light emitted by the blue backlight source, the green light is scattered randomly in all directions, wherein a part of the green light is emitted to the cambered surface which protrudes outwards from the light-reflecting isolation structure 7, and is emitted from the green light-emitting region corresponding to the second quantum dot region after being reflected by the cambered surface, to block lateral propagation of the green light and thereby reduce crosstalk of the green light to adjacent red quantum dots.
And when the blue light in the transmission area is emitted to the side cambered surface protruding outwards of the reflective isolation structure 7, the blue light can be emitted from the blue light emitting area corresponding to the transmission area after being reflected by the cambered surface so as to block the transverse propagation of the blue light, thereby avoiding the crosstalk of the blue light to the adjacent green quantum dots.
Fig. 7 is a schematic structural view of a quantum dot light-emitting device according to a sixth exemplary embodiment of the present invention. As shown in fig. 7, the longitudinal sectional shape of the light reflecting spacer structure 6 in the quantum dot light emitting device provided by this embodiment may also be arranged or have a concave pattern along two opposite sides of the substrate parallel direction, i.e., a closed pattern in which the left and right sides are recessed inward, wherein it is understood that the direction of the longitudinal section is perpendicular to the substrate direction and to the boundary line between the first quantum dot region and the second quantum dot region, the side wall of the reflective isolation structure 6 is an inwardly concave arc surface, when the green quantum dots in the second quantum dot region absorb the blue light emitted by the blue backlight source, the green light is scattered randomly in all directions, wherein a part of the green light is emitted to the cambered surface which is concave inwards of the light-reflecting isolating structure 6, and is emitted from the green light emitting region corresponding to the second quantum dot region after being reflected by the cambered surface, to block lateral propagation of the green light and thereby reduce crosstalk of the green light to adjacent red quantum dots.
And when the blue light in the transmission region emits to the inward concave cambered surface of the reflective isolation structure 6, the blue light can be emitted from the blue light emitting region corresponding to the transmission region after being reflected by the side cambered surface so as to separate the transverse propagation of the blue light, thereby avoiding the crosstalk of the blue light to the adjacent green quantum dots.
The embodiment of the invention also provides a display device, which can be any product or component with a display function, such as an OLED display device, a television comprising the OLED display device, a digital camera, a mobile phone, a tablet personal computer, an intelligent watch, an electronic book, a navigator and the like.
The display device includes: the quantum dot light emitting device in any one of the preceding embodiments. The structure, function and implementation of the quantum dot light emitting device can refer to the detailed description in the above embodiments, and are not repeated here.
Fig. 8 is a schematic flow diagram illustrating a method of fabricating a quantum dot light emitting device according to an exemplary embodiment of the invention. As shown in fig. 8, the method for manufacturing a quantum dot light emitting device provided in this embodiment includes:
Specifically, a Thin Film Transistor (TFT) and a driving circuit may be formed on a provided substrate to form a TFT backplane.
Specifically, a pixel definition layer may be disposed on the substrate, and then the first OLED backlight, the second OLED backlight, and the third OLED backlight are disposed, so that adjacent OLED backlights are isolated by the pixel definition layer. And then, filling the packaging protection layer on the first OLED backlight source, the second OLED backlight source, the third OLED backlight source and the pixel definition layer.
Specifically, for the formation of the above-mentioned OLED backlight, the layers of the OLED, including the blue light emitting layer, may be formed on the TFT backplane.
In one embodiment, the backlight source is a blue backlight source.
And 103, forming a light reflecting isolation structure on the light emergent side of the backlight source.
After the packaging protective layer is formed, the packaging colloid layer is formed through a die, and then the reflecting layer is formed on the outer side wall of the packaging colloid layer, wherein the reflecting layer can be a metal layer and can be evaporated on the outer side wall of the packaging colloid layer in an evaporation mode, so that space partition of the first quantum dot region and the second quantum dot region is realized.
And 104, filling quantum dot packaging layers between the light-reflecting isolation structures.
After the encapsulation colloid layer is formed, the encapsulation colloid doped with the first quantum dots is filled on one side of the encapsulation colloid layer to form a first quantum dot region, and the encapsulation colloid doped with the second quantum dots is filled on the other side of the encapsulation colloid layer to form a second quantum dot region. And the light reflecting isolation structure can be used for isolating light transmission between the first quantum dot region and the second quantum dot region.
In a specific embodiment, quantum dot packaging layers may be filled between the reflective isolation structures, and in order to implement RGB pixels, the quantum dot packaging layers may be a quantum dot-free region, a green quantum dot region, and a red quantum dot region, respectively.
In this embodiment, a blue backlight source is formed on a substrate, and then a reflective isolation structure is formed on a light exit side of the blue backlight source to block light propagation between a first quantum dot region and a second quantum dot region, so that excitation light emitted by a first quantum dot and a second quantum dot to an adjacent quantum dot region is reflected by a reflective isolation structure and then emitted from a corresponding light emitting region, thereby isolating light propagation between the first quantum dot region and the second quantum dot region, and effectively avoiding a cross color problem caused by secondary light emission due to absorption of the excitation light with a shorter wavelength by a quantum dot with a lower excitation energy level.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A quantum dot light emitting device, comprising:
a substrate;
a backlight source layer disposed on the substrate, including at least one backlight source;
the quantum dot packaging layer is arranged on the light emitting side of the backlight source layer and at least comprises a first quantum dot region, a second quantum dot region and a light reflecting isolation structure arranged between the first quantum dot region and the second quantum dot region, wherein first quantum dots are arranged in the first quantum dot region, and second quantum dots are arranged in the second quantum dot region;
the light-reflecting isolation structure is used for isolating light transmission between the first quantum dot region and the second quantum dot region.
2. The quantum dot light-emitting device of claim 1, wherein the light-reflecting isolation structure comprises: the packaging glue layer and the light reflecting layer are arranged on the outer side wall of the packaging glue layer.
3. The quantum dot light-emitting device according to claim 1, wherein the light-reflecting spacer structure has a longitudinal sectional shape including a triangle, a trapezoid, or a pattern having protrusions or depressions on opposite sides in a direction parallel to the substrate.
4. A quantum dot light-emitting device according to any of claims 1-3, wherein the backlight in the backlight source layer is a blue backlight, the first quantum dots are red quantum dots, and the second quantum dots are green quantum dots.
5. The qd-led device of claim 4, wherein the qd encapsulation layer further comprises a transmissive region disposed adjacent to the second qd region, the transmissive region for directly transmitting blue light from the blue backlight;
the light-reflecting isolation structure is arranged between the second quantum dot region and the transmission region and used for isolating light transmission between the second quantum dot region and the transmission region.
6. The quantum dot light-emitting device according to claim 5, wherein the backlight layer comprises a first blue OLED backlight, a second blue OLED backlight, and a third blue OLED backlight disposed on the substrate;
the first blue OLED backlight source is used for providing a light source for the first quantum dot region, so that the red quantum dots emit red light under the excitation of a blue light source;
the second blue OLED backlight source is used for providing a light source for the second quantum dot area, so that the green quantum dots emit green light under the excitation of the blue light source;
the third blue OLED backlight source is used for providing a light source for the transmission area, so that the blue light source directly penetrates through the transmission area to emit blue light.
7. The qd-led device of claim 1, wherein the backlight source layer comprises a plurality of the backlight sources, the backlight source layer further comprises a pixel defining layer disposed between adjacent ones of the backlight sources, and a package protective layer disposed on the backlight sources and the pixel defining layer;
the light-reflecting isolation structure is arranged on the packaging protection layer.
8. A display device, comprising: the qd-led device as claimed in any one of claims 1 to 7.
9. A method for preparing a quantum dot light-emitting device is characterized by comprising the following steps:
providing a substrate;
forming a backlight on the substrate;
forming a light-reflecting isolation structure on the light-emitting side of the backlight source;
fill quantum dot packaging layer between the isolation structure of reflecting light, at least adjacent first quantum dot region and the second quantum dot region of being provided with in the quantum dot packaging layer, be provided with first quantum dot in the first quantum dot region, be provided with the second quantum dot in the second quantum dot region, the isolation structure of reflecting light is used for keeping apart first quantum dot region with light propagation between the second quantum dot region.
10. The method for manufacturing a quantum dot light-emitting device according to claim 9, wherein forming a light-reflecting isolation structure on the light-emitting side of the backlight source comprises:
forming a packaging colloid layer on the light-emitting side of the backlight source;
and a reflective layer is vapor-plated on the outer side wall of the packaging colloid layer to form a reflective isolation structure.
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