CN111244223A - Method for forming silicon-based laminated layer and method for manufacturing silicon-based solar cell - Google Patents

Abstract

The present invention provides a method for forming a silicon-based stack, which includes providing a silicon substrate, wherein the silicon substrate has a first surface and a second surface opposite to each other. A first thin film layer is formed on the first surface. A second thin film layer is formed on the second surface. A microwave process is performed on the silicon substrate, the first thin film layer and the second thin film layer to passivate the first thin film layer and the second thin film layer. A method for manufacturing a silicon-based solar cell is also proposed.

Description

Method for forming silicon-based stack and method for manufacturing silicon-based solar cell

technical field

The present invention relates to a method for forming a stack and a method for manufacturing a solar cell, in particular to a method for forming a silicon-based stack and a method for manufacturing a silicon-based solar cell.

Background technique

Silicon is the second most abundant element on earth. Since silicon has a solid foundation in the development of the semiconductor industry, most solar cells currently use silicon as the main material. The basic structure of a solar cell is formed by bonding P-type and N-type semiconductors. At the junction of the N-type semiconductor and the P-type semiconductor, a built-in electric field from N to P is generated. When sunlight comes in, the photons provide energy, the generated electrons will be moved to the N-type semiconductor by the electric field, and the holes will move to the P-type semiconductor, and the charges accumulated on both sides are connected by wires. Output current.

However, at present, there are many defects on the surface of silicon-based materials (such as single-crystal silicon substrate or amorphous silicon layer), such as highly active dangling bonds, which cause electrons and holes to easily recombine and lead to carriers life cycle is reduced. The thermal annealing process is traditionally used to improve the defects on the surface of silicon-based materials, but the traditional heating method is from the outside to the inside, which makes the heating uneven and takes a long time.

SUMMARY OF THE INVENTION

The present invention provides a method for forming a silicon-based stack, which can rapidly and uniformly improve the interface defect density between the silicon-based stack and the silicon-based stack.

The present invention provides a method for manufacturing a silicon-based solar cell, which can rapidly and uniformly improve the interface defect density between the silicon substrate and the upper and lower stacked layers, so as to improve the life cycle of carriers, so that the silicon-based solar cell has good photoelectricity conversion efficiency.

The present invention provides a method for forming a silicon-based stack, which includes providing a silicon substrate, wherein the silicon substrate has a first surface and a second surface opposite to each other. A first thin film layer is formed on the first surface. A second thin film layer is formed on the second surface. A microwave process is performed on the silicon substrate, the first thin film layer and the second thin film layer to passivate the first thin film layer and the second thin film layer.

In an embodiment of the present invention, in the above-mentioned method for forming a silicon-based stack, the material of the first thin film layer includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide, and the material of the second thin film layer includes Intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide.

In an embodiment of the present invention, in the above-mentioned method for forming a silicon-based stack, the microwave frequency of the microwave process is, for example, between 850 MHz and 3 GHz.

In an embodiment of the present invention, in the above-mentioned method for forming a silicon-based laminate, the power density per unit area of the microwave process is, for example, between 10 mW/cm ² and 1000 mW/cm ² , and the time of the microwave process is, for example, Between 10 minutes and 90 minutes.

In an embodiment of the present invention, in the above-mentioned method for forming a silicon-based laminate, the power density per unit area of the microwave process is, for example, between 180 and 220 mW/cm ² , and the microwave frequency of the microwave process is, for example, between Between 2.3 GHz and 2.5 GHz, the time of the microwave process is, for example, between 25 minutes and 30 minutes.

In an embodiment of the present invention, in the above-mentioned method for forming a silicon-based laminate, the power density per unit area of the microwave process is, for example, between 140mW/cm ² and 160mW/cm ² , and the microwave frequency of the microwave process is, for example, It is between 900MHz and 930MHz, and the time of the microwave process is, for example, between 25 minutes and 30 minutes.

The present invention provides a method for manufacturing a silicon-based solar cell, which includes providing a semiconductor substrate with a first conductive mode, an opposite first surface and a second surface. A first thin film layer is formed on the first surface. A second thin film layer is formed on the second surface. The semiconductor substrate, the first thin film layer and the second thin film layer are subjected to microwave processing to passivate the first thin film layer and the second thin film layer.

In an embodiment of the present invention, in the above-mentioned manufacturing method of a silicon-based solar cell, the material of the first thin film layer includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide, and the material of the second thin film layer includes Intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide.

In an embodiment of the present invention, in the above-mentioned manufacturing method of a silicon-based solar cell, the microwave frequency of the microwave process is, for example, between 850 MHz and 3 GHz.

In an embodiment of the present invention, in the above-mentioned manufacturing method of a silicon-based solar cell, the power density per unit area of the microwave process is, for example, between 10mW/cm ² and 1000mW/cm ² , and the time of the microwave process is, for example, Between 10 minutes and 90 minutes.

In an embodiment of the present invention, in the above-mentioned manufacturing method of a silicon-based solar cell, the power density per unit area of the microwave process is, for example, between 180 and 220 mW/cm ² , and the microwave frequency of the microwave process is, for example, between Between 2.3 GHz and 2.5 GHz, the time of the microwave process is, for example, between 25 minutes and 30 minutes.

In an embodiment of the present invention, in the above-mentioned manufacturing method of a silicon-based solar cell, the power density per unit area of the microwave process is, for example, between 140mW/cm ² and 160mW/cm ² , and the microwave frequency of the microwave process is, for example, It is between 900MHz and 930MHz, and the time of the microwave process is, for example, between 25 minutes and 30 minutes.

In an embodiment of the present invention, the above-mentioned method for manufacturing a silicon-based solar cell further includes forming a first semiconductor layer on the passivated first thin film layer, and the first semiconductor layer has a different conductivity than the first conductive method. The second conduction mode. A second semiconductor layer is formed on the passivated second thin film layer, and the second semiconductor layer has the same first conduction mode as the semiconductor substrate.

In an embodiment of the present invention, the above-mentioned method for manufacturing a silicon-based solar cell further includes forming a first transparent conductive film on the first semiconductor layer. A second transparent conductive film is formed on the second semiconductor layer.

In an embodiment of the present invention, the above-mentioned manufacturing method of a silicon-based solar cell further includes forming a first electrode on the first transparent conductive film. A second electrode is formed on the second transparent conductive film.

In an embodiment of the present invention, in the above-mentioned manufacturing method of a silicon-based solar cell, the first thin film layer has a second conductive mode different from the first conductive mode.

In an embodiment of the present invention, the above-mentioned manufacturing method of a silicon-based solar cell further includes forming a third electrode on the first thin film layer. A fourth electrode is formed on the second thin film layer.

Based on the above, in the method for forming a silicon-based laminate proposed in the present invention, a microwave process is performed on the silicon substrate, the first thin film layer and the second thin film layer to quickly and uniformly passivate the first thin film layer and the second thin film In this way, dangling bonds can be prevented from bonding with other atoms in the air (eg, carbon atoms or oxygen atoms), so as to improve the interface defect density between the silicon substrate and the first thin film layer and the second thin film layer. In addition, in the manufacturing method of the silicon-based solar cell proposed by the present invention, the semiconductor substrate, the first thin film layer and the second thin film layer are subjected to microwave processing to quickly and uniformly passivate the first thin film layer and the second thin film Floor. In this way, the interface defect density between the substrate materials can be improved, so that the silicon-based solar cell has good conversion efficiency.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

Description of drawings

FIG. 1A is a flowchart of a method for forming a silicon-based stack according to an embodiment of the present invention.

1B is a schematic cross-sectional view of a method for forming a silicon-based stack according to an embodiment of the present invention.

FIG. 2 is a flowchart of a method for manufacturing a silicon-based solar cell according to an embodiment of the present invention.

3 is a schematic cross-sectional view of a silicon-based solar cell according to an embodiment of the present invention.

4 is a schematic cross-sectional view of a silicon-based solar cell according to another embodiment of the present invention.

FIG. 5 is a life cycle diagram of carriers after the silicon substrate, the first thin film layer and the second thin film layer of the conventional solar cell are passivated by conventional annealing.

6 is a life cycle diagram of carriers after the silicon substrate, the first thin film layer and the second thin film layer of the silicon-based solar cell are passivated by microwaves according to an embodiment of the present invention.

Description of reference numbers:

100: silicon substrate;

102: the first surface;

104: the second surface;

110, 210, 310: the first film layer;

120, 220, 320: the second film layer;

200, 300: semiconductor substrate;

200a: a first semiconductor layer;

200b: a second semiconductor layer;

230: a first transparent conductive film;

240: the second transparent conductive film;

250: the first electrode;

260: the second electrode;

330: the third electrode;

340: Fourth electrode.

Detailed ways

The present invention will be described more fully hereinafter with reference to the accompanying drawings of this embodiment. However, the present invention may be embodied in various forms and should not be limited to the embodiments described herein. The thicknesses of layers and regions in the figures may be exaggerated for clarity. The same or similar reference numerals denote the same or similar elements, and the detailed description in the following paragraphs will not be repeated. In addition, the directional terms mentioned in the embodiments, such as: up, down, left, right, front or rear, etc., only refer to the directions of the attached drawings. Accordingly, the directional terms used are illustrative and not limiting of the present invention.

Generally, a silicon-based stack is prone to surface defects during fabrication. The following will provide a method for forming a silicon-based stack to uniformly and rapidly reduce defects between interfaces of the silicon-based stack.

FIG. 1A is a flowchart of a method for forming a silicon-based stack according to an embodiment of the present invention. 1B is a schematic cross-sectional view of a method for forming a silicon-based stack according to an embodiment of the present invention. Referring to FIG. 1A and FIG. 1B , first, a silicon substrate 100 is provided (step S11 ). The material of the silicon substrate 100 is, for example, monocrystalline silicon, polycrystalline silicon, amorphous silicon or a combination thereof. N-type amorphous silicon film or P-type amorphous silicon film.

It can be seen from FIG. 1B that the silicon substrate 100 has a first surface 102 and a second surface 104 opposite to each other. Next, a first thin film layer 110 is formed on the first surface 102 (step S13 ). In this embodiment, the material of the first thin film layer 110 includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide. Of course, the material of the first thin film layer 110 is not limited thereto.

Next, a second thin film layer 120 is formed on the second surface 104 (step S15). In this embodiment, the material of the second thin film layer 120 includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide. Of course, the material of the second thin film layer 120 is not limited thereto. It should be noted that, the order of step S13 and step S15 may also be reversed. That is to say, in an embodiment, step S15 may be performed first and then step S13 may be performed. Alternatively, in an embodiment, step S13 and step S15 may be performed simultaneously.

In step S13 and step S15, the method for forming the thin film layer may be chemical vapor deposition method, physical vapor deposition method or atomic layer deposition method. In this embodiment, the thin film layer is formed by chemical vapor deposition. The process pressure is, for example, 400 mTorr, the radio frequency power is, for example, 500 mW/cm ² , the substrate temperature is, for example, 150° C., and the film thickness is For example, it is 20 nanometers, but steps S13 and S15 are not limited to this.

After the thin film is deposited, the silicon substrate 100 , the first thin film layer 110 and the second thin film layer 120 are then subjected to microwave processing (step S17 ). The microwave frequency of the microwave process is, for example, between 850MHz and 3GHz. The power density per unit area of the microwave process is, for example, between 10 mW/cm ² and 1000 mW/cm ² . The time of the microwave process is, for example, between 10 minutes and 90 minutes.

In this embodiment, the microwave frequency is preferably 2.4GHz, the power density per unit area of the microwave process is preferably 200mW/cm ² , and the microwave process time is preferably 30 minutes, but the invention is not limited thereto. In another embodiment, the microwave frequency of the microwave process is preferably 915MHz, the power density per unit area of the microwave process is preferably 150mW/cm ² , and the time of the microwave process is preferably 30 minutes.

The present invention utilizes the characteristic that silicon material is a very good microwave absorber, and generates electromagnetic waves through the microwave manufacturing process and penetrates the object to generate polarized oscillation for full uniform heating, which takes a short time and can achieve the purpose of energy saving. The traditional annealing process is improved from the outside to the inside, which is easy to heat unevenly and takes time.

When the silicon substrate 100 , the first thin film layer 110 and the second thin film layer 120 are subjected to a microwave process, the dangling bonds on the silicon substrate 100 are deactivated, so as to prevent the dangling bonds from bonding with other atoms (such as carbon atoms or oxygen atoms) ), thereby generating a passivation effect, thereby improving the interface defect density between the silicon substrate 100 and the first thin film layer 110 and improving the interface defect density between the silicon substrate 100 and the second thin film layer 120 .

The method for forming a silicon-based stack of the present invention has the advantages of fast time saving and uniform heating, and can also achieve the purpose of energy saving. In this embodiment, compared with the traditional passivation using the annealing process, the passivation using the microwave process can achieve energy saving of about 20%.

The above-mentioned method for forming the silicon-based stack can be applied to the fabrication of silicon-based solar cells, for example, the fabrication of silicon-based heterojunction solar cells. This will be explained below.

FIG. 2 is a flowchart of a method for manufacturing a silicon-based solar cell according to an embodiment of the present invention. 3 is a schematic cross-sectional view of a silicon-based solar cell according to an embodiment of the present invention, wherein the silicon-based solar cell is, for example, a silicon-based heterojunction solar cell. 2 and 3 , first, a semiconductor substrate 200 is provided (step S21 ). The semiconductor substrate 200 is, for example, a silicon substrate. By doping trivalent atoms or pentavalent atoms, the semiconductor substrate 200 can be a P-type silicon substrate or an N-type silicon substrate, respectively. . In this embodiment, the semiconductor substrate 200 is described by taking an N-type silicon substrate as an example, but the present invention is not limited thereto. In another embodiment, the semiconductor substrate 200 may be a P-type silicon substrate.

Next, the semiconductor substrate 200 has a first surface 201 and a second surface 202 opposite to each other. A first thin film layer 210 is formed on the first surface 201 (step S23). In this embodiment, the material of the first thin film layer 210 may be amorphous silicon, amorphous silicon nitride, amorphous silicon oxide, amorphous aluminum oxide or a combination thereof. Of course, the material of the first thin film layer 210 is not limited thereto.

Next, a second thin film layer 220 is formed on the second surface 202 (step S25). The material of the second thin film layer 220 may be amorphous silicon, amorphous silicon nitride, amorphous silicon oxide, amorphous aluminum oxide or a combination thereof. Of course, the material of the second thin film layer 220 is not limited thereto. Likewise, steps S23 and S25 are not restricted in order. The formation method of the thin film layer may be chemical vapor deposition method, physical vapor deposition method or atomic layer deposition method.

Then, microwave processing is performed on the semiconductor substrate 200 , the first thin film layer 210 and the second thin film layer 220 (step S27 ). In this embodiment, the microwave frequency of the microwave process is, for example, between 850MHz and 3GHz. The power density per unit area of the microwave process is, for example, between 10 mW/cm ² and 1000 mW/cm ² . The time of the microwave process is, for example, between 10 minutes and 90 minutes.

After the semiconductor substrate 200 , the first thin film layer 210 and the second thin film layer 220 are subjected to a microwave process, the dangling bonds on the semiconductor substrate 200 are deactivated, so as to prevent the dangling bonds from bonding with other atoms (such as carbon atoms or oxygen atoms), This results in a passivation effect.

Next, a first semiconductor layer 200 a is formed on the first thin film layer 210 . The semiconductor substrate 200 has a first conductive mode, and the first thin film layer 210 has a second conductive mode different from the first conductive mode. In this embodiment, the first semiconductor layer 200a is described by taking a P-type amorphous silicon layer as an example. The formation method of the first semiconductor layer 200a is, for example, chemical vapor deposition, physical vapor deposition, or atomic layer deposition.

Next, a second semiconductor layer 200 b is formed on the second thin film layer 220 , and the second semiconductor layer 200 b has the same first conductive mode as the semiconductor substrate 200 . In this embodiment, the second semiconductor layer 200b is described by taking an N-type amorphous silicon layer as an example. The formation method of the second semiconductor layer 200b is, for example, chemical vapor deposition, physical vapor deposition, or atomic layer deposition.

Next, as shown in FIG. 3, a first transparent conductive film 230 is formed on the first semiconductor layer 200a, so that the current collection efficiency can be improved. The material of the first transparent conductive film 230 may be transparent conductive oxide (transparent conductive oxide, TCO), such as metal oxides such as indium tin oxide (ITO). The formation method of the first transparent conductive film 230 is, for example, evaporation or sputtering.

In addition, the second transparent conductive film 240 is formed on the second semiconductor layer 200b, so that the current collection efficiency can be improved. The material of the second transparent conductive film 240 may be a transparent conductive oxide (transparent conductive oxide, TCO), such as a metal oxide such as indium tin oxide (ITO). The formation method of the second transparent conductive film 240 is, for example, evaporation or sputtering. Of course, the order in which the first transparent conductive film 230 and the second transparent conductive film 240 are formed is not limited.

Then, a first electrode 250 is formed on the first transparent conductive film 230 . The first electrode 250 can be used to derive the power generated by the silicon-based heterojunction solar cell. The material of the first electrode 250 is, for example, aluminum, gold, silver or copper.

Finally, a second electrode 260 is formed on the second transparent conductive film 240 to form a silicon-based heterojunction solar cell. The second electrode 260 can be used to derive the power generated by the silicon-based heterojunction solar cell. The material of the second electrode 260 is, for example, aluminum, gold, silver or copper. Likewise, the order in which the first electrodes 250 and the second electrodes 260 are formed is not limited.

In the manufacturing method of the silicon-based heterojunction solar cell of the present embodiment, the semiconductor substrate 200 , the first thin film layer 210 and the second thin film layer 220 are subjected to microwave processing to avoid dangling bonds from bonding with other atoms. , thereby improving the interface defect density between the semiconductor substrate 200 and the first thin film layer 210, as well as the interface defect density between the semiconductor substrate 200 and the second thin film layer 220, so that the silicon-based heterojunction solar cell can have good photovoltaic performance. conversion efficiency. Also, microwave treatment has a rapid and homogenizing effect.

The manufacturing method of the silicon-based solar cell in FIG. 2 can also be applied to, for example, the manufacture of a back electrode passivation cell (Passivated Emitter and Rear Contact Solar Cell, PERC). 4 is a schematic cross-sectional view of a silicon-based solar cell according to another embodiment of the present invention, wherein the silicon-based solar cell is, for example, a back electrode passivation cell. 2 and FIG. 4 , first, a semiconductor substrate 300 is provided (step S21 ). The semiconductor substrate 300 is, for example, a silicon substrate. By doping trivalent atoms or pentavalent atoms, the semiconductor substrate 300 can be a P-type silicon substrate or an N-type silicon substrate, respectively. . In this embodiment, the semiconductor substrate 300 is described by taking an N-type silicon substrate as an example, but the present invention is not limited thereto. In another embodiment, the semiconductor substrate 300 may be a P-type silicon substrate.

The semiconductor substrate 300 has a first surface 301 and a second surface 302 opposite to each other. The first surface 301 has a textured structure, such as zigzag or other structures that can roughen the first surface 301 .

Next, a first thin film layer 310 is formed on the first surface 301 (step S23). The material of the first thin film layer 310 is, for example, silicon oxide, which can be used as the emitter of the solar cell. The semiconductor substrate 300 has a first conduction mode. The first thin film layer 310 has a second conductive mode different from the first conductive mode by doping trivalent atoms or pentavalent atoms. For example, in some embodiments, when the semiconductor substrate 300 is a P-type doped semiconductor, the first thin film layer 310 may be an N-type doped semiconductor. In other embodiments, when the semiconductor substrate 300 is an N-type doped semiconductor, the first thin film layer 310 may be a P-type doped semiconductor.

Next, a second thin film layer 320 is formed on the second surface 302 (step S25). The material of the second thin film layer 320 is, for example, silicon oxide or aluminum oxide.

Then, microwave processing is performed on the semiconductor substrate 300 , the first thin film layer 310 and the second thin film layer 320 (step S27 ). In this embodiment, the microwave frequency of the microwave process is, for example, between 850MHz and 3GHz. The power density per unit area of the microwave process is, for example, between 10 mW/cm ² and 1000 mW/cm ² . The time of the microwave process is, for example, between 10 minutes and 90 minutes.

After the semiconductor substrate 300 , the first thin film layer 310 and the second thin film layer 320 are subjected to a microwave process, the dangling bonds on the semiconductor substrate 300 are deactivated, so as to prevent the dangling bonds from bonding with other atoms (such as carbon atoms or oxygen atoms), This results in a passivation effect.

Next, the third electrode 330 is disposed on the first thin film layer 310 , and the third electrode 330 is electrically connected to the first thin film layer 310 . The material of the third electrode 330 is, for example, aluminum, gold, silver or copper. In addition, the fourth electrode 340 is disposed on the opening of the second thin film layer 320 . The material of the fourth electrode 340 is, for example, aluminum, gold, silver or copper.

Based on the above-mentioned embodiments, it can be known that the microwave process processing on the semiconductor substrate 300 , the first thin film layer 310 and the second thin film layer 320 can avoid the bonding between dangling bonds and other atoms, and can quickly and uniformly improve the relationship between the semiconductor substrate 300 and the first thin film layer 320 . The interface defect density between a thin film layer 310 and the interface defect density between the semiconductor substrate 300 and the second thin film layer 320 can make the back electrode passivation cell (Passivated Emitter and Rear Contact Solar Cell, PERC) have good photoelectricity conversion efficiency.

FIG. 5 is a life cycle diagram of carriers after the silicon substrate, the first thin film layer and the second thin film layer of the conventional solar cell are passivated by conventional annealing. 6 is a life cycle diagram of carriers after the silicon substrate, the first thin film layer and the second thin film layer of the silicon-based solar cell are passivated by microwaves according to an embodiment of the present invention. Referring to FIG. 5 and FIG. 6 , the experimental results show that the carrier lifetime after the conventional annealing process is 940 μs, and the carrier lifetime after the microwave process is 1220 μs. Therefore, it can be seen that the microwave process treatment of the semiconductor substrate, the first thin film layer and the second thin film layer can effectively increase the carrier life cycle.

To sum up, in the method for forming a silicon-based laminate of the present invention, the silicon substrate, the first thin film layer and the second thin film layer are subjected to microwave processing to quickly and uniformly passivate the first thin film layer and the second thin film layer. Two thin film layers, which can prevent dangling bonds from bonding with other atoms (such as carbon atoms or oxygen atoms), so as to improve the interface defect density between the silicon substrate and the first thin film layer, and the relationship between the silicon substrate and the second thin film layer. interfacial defect density. In addition, in the manufacturing method of the silicon-based solar cell of the present invention, the semiconductor substrate, the first thin film layer and the second thin film layer are subjected to a microwave process to quickly and uniformly passivate the first thin film layer and the second thin film layer, In this way, dangling bonds can be prevented from bonding with other atoms (such as carbon atoms or oxygen atoms), so as to improve the interface defect density between the semiconductor substrate and the first thin film layer, as well as the interface defect between the semiconductor substrate and the second thin film layer. density, so that silicon-based solar cells have good conversion efficiency.

Although the present invention has been disclosed above with examples, it is not intended to limit the present invention. Any person skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be defined by the appended claims.

Claims (13)

1. A method for forming a silicon-based stack, comprising: providing a silicon substrate, wherein the silicon substrate has opposing first and second surfaces; forming a first thin film layer on the first surface; forming a second thin film layer on the second surface; and A microwave process is performed on the silicon substrate, the first thin film layer and the second thin film layer to passivate the first thin film layer and the second thin film layer. 2 . The method for forming a silicon-based stack according to claim 1 , wherein the material of the first thin film layer comprises intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide, and the second The material of the thin film layer includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide. 3 . The method for forming a silicon-based laminate according to claim 1 , wherein the microwave frequency of the microwave process is between 850 MHz and 3 GHz. 4 . 4 . The method for forming a silicon-based laminate according to claim 1 , wherein the power density per unit area of the microwave process is between 10 mW/cm ² and 1000 mW/cm ² . The time is between 10 minutes and 90 minutes. 5 . The method for forming a silicon-based laminate according to claim 1 , wherein the power density per unit area of the microwave process is between 180 and 220 mW/cm ² , and the microwave frequency of the microwave process is between 180 and 220 mW/cm 2 . 6 . Between 2.3GHz and 2.5GHz, the microwave process time is between 25 minutes and 30 minutes. 6 . The method for forming a silicon-based laminate according to claim 1 , wherein the power density per unit area of the microwave process is between 140 mW/cm ² and 160 mW/cm ² . The microwave frequency is between 900MHz and 930MHz, and the time of the microwave process is between 25 minutes and 30 minutes. 7. A method for manufacturing a silicon-based solar cell, comprising: providing a semiconductor substrate with a first conductive mode, a first surface and a second surface opposite to each other; forming a first thin film layer on the first surface; forming a second thin film layer on the second surface; and The semiconductor substrate, the first thin film layer and the second thin film layer are subjected to microwave processing to passivate the first thin film layer and the second thin film layer. 8 . The method for manufacturing a silicon-based solar cell according to claim 7 , wherein the material of the first thin film layer comprises intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide, and the second thin film layer comprises intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide. The material of the thin film layer includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide. 9 . The method for manufacturing a silicon-based solar cell according to claim 7 , wherein the microwave frequency of the microwave process is between 850MHz and 3GHz. 10 . 10 . The method for manufacturing a silicon-based solar cell according to claim 7 , wherein the power density per unit area of the microwave process is between 10 mW/cm ² and 1000 mW/cm ² . 10 . The time is between 10 minutes and 90 minutes. 11 . The method for manufacturing a silicon-based solar cell according to claim 7 , wherein the power density per unit area of the microwave process is between 180 mW/cm ² and 220 mW/cm ² . The microwave frequency is between 2.3GHz and 2.5GHz, and the microwave process time is between 25 minutes and 30 minutes. 12 . The method for manufacturing a silicon-based solar cell according to claim 7 , wherein the power density per unit area of the microwave process is between 140 mW/cm ² and 160 mW/cm ² . 12 . The microwave frequency is between 900MHz and 930MHz, and the microwave process time is between 25 minutes and 30 minutes. 13. The method for manufacturing a silicon-based solar cell according to claim 7, further comprising: forming a first semiconductor layer on the passivated first thin film layer, the first semiconductor layer having a second conductive mode different from the first conductive mode; forming a second semiconductor layer on the passivated second thin film layer, the second semiconductor layer having the same first conductive mode as the semiconductor substrate; forming a first transparent conductive film on the first semiconductor layer; forming a second transparent conductive film on the second semiconductor layer; forming a first electrode on the first transparent conductive film; and A second electrode is formed on the second transparent conductive film.

Images