CN111243966B - Flexible sensor manufacturing process and flexible sensor - Google Patents
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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Abstract
The invention provides a flexible sensor manufacturing process and a flexible sensor, wherein the manufacturing process comprises the following steps: manufacturing a first flexible substrate layer on a first silicon wafer, and manufacturing a sensor unit on the first flexible substrate layer; manufacturing a circuit unit on the surface of the second silicon wafer through a semiconductor process; bonding the side of the first silicon wafer provided with the sensor unit and the side of the second silicon wafer provided with the circuit unit in a face-to-face mode, and enabling the sensor unit and the circuit unit to establish an electrical connection relationship to form a detection unit; and processing the back surface of the second silicon wafer to manufacture a thin silicon wafer, and removing the first silicon wafer to manufacture the single-chip flexible sensor with the detection unit. The manufacturing process of the flexible sensor provided by the invention has the advantages of strong process compatibility, batch production, greatly simplified structure of the manufactured flexible sensor, high integration level and excellent performance, and meets the requirements of the fields of flexible application, such as wearable, medical treatment, robots and the like.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a flexible sensor manufacturing process and a flexible sensor.
Background
With the continuous development of human society to industrialization, informatization and intellectualization, the related fields put forward higher requirements on sensors in electronic technology, and flexible sensing technology which is flexible, bendable and stretchable is urgently needed to meet the requirements of the fields of wearable electronics, medical treatment, robot industry, aerospace and the like. The current flexible sensing technology becomes a development direction with great challenges and potentials, and has wide development prospects in different fields.
Currently, flexible sensors are still mainly manufactured by printing or Transfer (Stamp Transfer), and each of these methods has different disadvantages:
1) the sensing unit and the circuit unit providing reading and signal conditioning functions for the sensitive signal of the sensing unit are in a mutually separated state and are only connected in an external lead mode, so that the number of leads is large, the system is complex, or only an active circuit with a simple structure and poor performance can be integrated, and the performance of the sensor is indirectly low;
2) most of the manufacturing processes are laboratory research and development properties, are suitable for principle research, are difficult to realize batch production and manufacture, and are difficult to ensure reliability and quality.
Therefore, the development of the current flexible sensor on research, development, manufacture and application is very slow, and the flexible sensor can not keep pace with the requirements of industry and market.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a flexible sensor manufacturing process and a flexible sensor, which are used for solving the problem that the traditional flexible sensor is difficult to produce in batch and is slow in development in application, and solving the technical defects that the traditional flexible sensor is large in lead number and not compact in structure due to the fact that a sensing unit and a circuit unit are connected in a lead mode.
In order to achieve the purpose, the invention adopts the following technical scheme on one hand:
a flexible sensor manufacturing process, comprising:
providing a first silicon wafer, manufacturing a first flexible substrate layer on the first silicon wafer, and manufacturing a sensor unit on the first flexible substrate layer;
providing a second silicon wafer, and manufacturing a circuit unit on the surface of the second silicon wafer through a semiconductor process;
bonding the side of the first silicon wafer provided with the sensor unit and the side of the second silicon wafer provided with the circuit unit in a face-to-face mode, and enabling the sensor unit and the circuit unit to establish an electrical connection relationship to form a detection unit;
and processing the back surface of the second silicon wafer to manufacture a thin silicon wafer, and removing the first silicon wafer to manufacture the single-chip flexible sensor with the detection unit.
On the other hand, the invention also provides a flexible sensor which is prepared by adopting the flexible sensor manufacturing process.
Compared with the prior art, the invention has the following beneficial effects:
1. the manufacturing process of the flexible sensor adopts the silicon-based circuit, can achieve higher sampling frequency, lower noise signal conditioning and higher density array integration, realizes high-frame-frequency flexible sensor data reading and processing and high-space and time resolution sensing, and ensures that the sensor has higher reliability and superior performance in the application aspect.
2. The flexible sensor manufacturing process realizes the longitudinal integration of the circuit and the sensor unit, greatly simplifies the structure of the sensor, has higher integration level, can effectively improve the performance of the sensor and reduce the complexity of a sensor application system.
3. The manufacturing process of the flexible sensor has strong compatibility with the existing semiconductor process, can effectively solve the problem that the existing flexible sensor is difficult to produce in batch, and can improve the yield and the production efficiency of devices.
4. The flexible sensor manufacturing process realizes the parallel manufacturing of the sensor unit and the circuit unit, can effectively improve the research and development and manufacturing period of devices, and improves the iteration efficiency of product development.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
FIG. 1 is a schematic view of the overall structure of a flexible sensor completed by the manufacturing process of the embodiment of the invention;
FIG. 2 is a schematic view of the structure of the device after the first flexible substrate layer is manufactured;
FIG. 3 is a schematic structural diagram of a device after a sensor thin film layer is manufactured;
FIG. 4 is a schematic diagram of the device structure after the sensor film patterning is completed;
FIG. 5 is a schematic view of the device structure after the first dielectric layer film deposition, CMP and first via patterning are completed;
FIG. 6 is a schematic diagram of the device structure after completion of the sensor unit;
FIG. 7 is a schematic diagram of the device structure after completion of the circuit unit;
FIG. 8 is a schematic diagram of the device structure after face-to-face bonding of the first and second silicon wafers is completed;
FIG. 9 is a schematic view of the device structure after the thinning of the back side of the second silicon wafer is completed;
FIG. 10 is a schematic diagram of the device structure after completion of fabrication of a second flexible substrate layer on the back side of a second silicon wafer;
fig. 11 is a schematic view of the device structure after the first silicon wafer is removed.
In the figure: 101. a first silicon wafer; 102. a first flexible substrate layer; 103. a first electrode layer; 104. a sensitive layer; 105. a second electrode layer; 106. a first dielectric layer; 107. a first connecting through hole; 108. a first connecting conductive plug; 109. a sensor unit; 201. a second silicon wafer; 202. a micro integrated circuit; 203. a top metal layer; 204. a second dielectric layer; 205. a second connecting conductive plug; 206. a second flexible substrate layer; 207. a circuit unit; 301. a bonding surface; 401. a flexible sensor.
Detailed Description
The invention is further described in detail below with reference to the accompanying drawings, and specific embodiments are given.
An embodiment of the present invention provides a flexible sensor manufacturing process, referring to fig. 2 to 11, including:
providing a first silicon wafer 101, and manufacturing a first flexible substrate layer 102 on the first silicon wafer 101 by deposition, spin coating or the like, specifically referring to fig. 2; sequentially manufacturing a first electrode layer film 103, a sensitive layer film 104 and a second electrode layer film 105 on a first flexible substrate layer 102 of the first silicon wafer 101 by deposition, spin coating or the like to form a sensor film layer, which is specifically shown in fig. 3; sequentially performing a first patterning process and a second patterning process on the sensor thin film layer to form a plurality of sensing rudiments which are distributed at intervals and are composed of a first electrode layer 103, a sensitive layer 104 and a second electrode layer 105, wherein the sectional area of the first electrode layer 103 is larger than the sectional areas of the second electrode layer 105 and the sensitive layer 104, and the specific reference is made to fig. 4; depositing a first dielectric layer thin film 106 on each sensing prototype, wherein the thickness of the first dielectric layer thin film 106 is at least higher than that of the second electrode layer 105, flattening the sensing prototype by using a chemical mechanical polishing process, then performing a third patterning process on the flattened first dielectric layer thin film 106, and manufacturing a first connecting through hole 107 formed in the first dielectric layer 106 and respectively penetrating through the surfaces of the first electrode layer 103 and the second electrode layer 105 of each sensing prototype, wherein the sectional area of the first connecting through hole 107 is smaller than that of the first electrode layer 103 and the second electrode layer 105, and is specifically shown in fig. 5; manufacturing a metal layer film on the first connection through hole 107 and the first dielectric layer 106, and performing a chemical mechanical polishing process on the metal layer film to expose the metal layer film to the surface of the first dielectric layer 106 to form a first connection conductive plug 108, thereby completing the manufacturing of the sensor unit 109; the first connecting conductive plug 108 is penetrating and filling the first connecting through hole 107, and the height of the first connecting conductive plug is flush with the surface of the first dielectric layer 106 or slightly higher/lower than the surface of the first dielectric layer 106, so as to form an electrical connection portion of the sensor unit 109, as specifically shown in fig. 6.
Providing a second silicon wafer 201, and manufacturing a micro integrated circuit 202 which can be used as a reading and signal conditioning circuit on the surface of the second silicon wafer 201 through a semiconductor process; fabricating two top-level metals 203 on the micro-integrated circuit 202, spaced apart from each other for signal access thereto; manufacturing a second dielectric layer 204 on the top-layer metal 203 to completely cover the top-layer metal 203, wherein the second dielectric layer 204 is formed by utilizing a chemical mechanical polishing process to perform planarization treatment, and then performing a fourth patterning process on the second dielectric layer 204 to form second connecting through holes respectively penetrating through the surfaces of the two top-layer metals 203, wherein the sectional area of each second connecting through hole is smaller than that of the top-layer metal 203; manufacturing a second connecting conductive plug 205 by using the second connecting through hole, thereby completing the manufacturing of the circuit unit 207; the height of the second connecting conductive plug 205 is equal to the surface of the second dielectric layer 204, or slightly higher/lower than the surface of the second dielectric layer 204, so as to form an electrical connection portion of the circuit unit 207, as specifically shown in fig. 7. It should be noted that, in the process of implementing the present invention, the fabrication of the circuit unit 207 and the fabrication of the sensor unit 109 are not limited to a sequential order, and may be performed simultaneously or first.
And then, bonding the side of the first silicon wafer 101, on which the sensor unit 109 is fabricated, with the side of the second silicon wafer 201, on which the circuit unit 207 is fabricated, in a face-to-face manner, where the bonding is implemented by an alignment process, so that the first connecting conductive plug 108 and the second connecting conductive plug 205 are connected at the bonding surface 301, and the sensor unit 109 and the circuit unit 207 are electrically connected to form a detecting unit, which is specifically shown in fig. 8.
Processing the back surface of the second silicon wafer 201 to manufacture a thin silicon wafer with a thickness of preferably 2-100 μm, wherein the manufacturing process is realized by the existing thinning process, and can also be realized by other equivalent means, specifically referring to fig. 9; manufacturing a second flexible substrate layer 206 on the back surface of the second silicon wafer 201 by deposition, spin coating or the like, specifically referring to fig. 10; finally, the first silicon wafer 101 is removed while leaving the first flexible substrate layer 102, for example, the first silicon wafer 101 may be removed by means of peeling, to produce a single-chip flexible sensor with a detection unit, preferably having a thickness of 5-150 μm, as shown in particular with reference to fig. 11. It will be appreciated by those skilled in the art that in practicing the present invention, fabrication of the second flexible substrate layer 206 may be optionally omitted, and the resulting flexible sensor may have only a single layer of the first flexible substrate layer 102.
The first and second connecting conductive plugs 108 and 205 may be tungsten plugs, copper plugs, or other conductive materials or combinations commonly used in semiconductors; the micro integrated circuit 202 may adopt a CMOS circuit, a bipolar circuit or a thin film transistor circuit; the first flexible substrate layer 102 and the second flexible substrate layer 206 may be made of polyimide, polyester, polyurethane, ethylene-vinyl acetate copolymer, polyolefin, epoxy resin, polycarbonate, polyamide, acrylic resin, parylene-like materials, silicone resin, and the like.
The first patterning process sequentially adopts a first etching agent and a second etching agent to respectively etch the second electrode layer film 105 and the sensitive layer film 104 to form a second electrode layer 105 and a sensitive layer 104; and in the second patterning process, the first electrode layer film 103 is etched by adopting a third etching agent to form an exposed first electrode layer 103 and expose part of the upper surface of the first flexible substrate layer 102, so that the manufacture of a plurality of mutually spaced sensing rudiments is completed.
In the above solution, the purpose of the planarization treatment of the first dielectric layer 106 and the second dielectric layer 204 by using the chemical mechanical polishing process is to reduce the roughness of the wafer surface, so that the two wafers have the best surface flatness when being bonded, thereby forming a good bond.
The foregoing solution further includes separating each of the manufactured flexible sensors by a conventional dicing process to form a flexible sensor 401 having a single detecting unit or an array sensor including two or more detecting units. It should be noted that, before dicing, a connection pad is also required to be fabricated to connect the flexible sensor to the outside.
As shown in FIG. 1, the present invention also provides a flexible sensor, which is manufactured by using the above-mentioned flexible sensor manufacturing process, and those skilled in the art can select and manufacture different thickness ranges, such as 5-150 μm as mentioned above, according to different use environments and conditions of the flexible sensor in actual manufacturing.
The manufacturing process of the invention adopts the silicon-based signal reading and signal conditioning transistor circuit manufactured by a mature semiconductor process as a circuit unit, and the circuit unit and the sensor unit are longitudinally integrated on a single silicon chip, so that the structure of the sensor is greatly simplified, the integration level is higher, the manufacturing process can be compatible with the existing semiconductor process, the problem that the current flexible sensor is difficult to produce in batch can be effectively solved, and the performance of a transmission device can be improved; in addition, the invention adopts a parallel manufacturing mode, which can greatly shorten the development period of the sensor and improve the production efficiency.
Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.
Claims (9)
1. A flexible sensor manufacturing process, comprising:
providing a first silicon wafer, manufacturing a first flexible substrate layer on the first silicon wafer, and manufacturing a sensor unit on the first flexible substrate layer;
providing a second silicon wafer, and manufacturing a circuit unit on the surface of the second silicon wafer through a semiconductor process;
bonding the side of the first silicon wafer provided with the sensor unit and the side of the second silicon wafer provided with the circuit unit in a face-to-face mode, and enabling the sensor unit and the circuit unit to establish an electrical connection relationship to form a detection unit;
processing the back surface of the second silicon wafer to manufacture a thin silicon wafer, and removing the first silicon wafer to manufacture a single-chip flexible sensor with a detection unit;
the manufacturing method of the sensor unit comprises the following steps:
1) depositing and patterning an electrode layer film and a sensitive layer film on a first flexible substrate layer of the first silicon wafer to form a plurality of sensing rudiments which are distributed at intervals and are composed of two or more electrodes and sensitive structures; the sensing prototype comprises a first electrode layer, a sensitive layer and a second electrode layer, wherein the sectional area of the first electrode layer is larger than that of the second electrode layer and the sensitive layer;
2) manufacturing a first medium layer to completely cover each sensing prototype, and then manufacturing first connecting through holes which penetrate through the surface of the electrode layer of each sensing prototype on the first medium layer through a graphical process;
3) for each sensor prototype, a first connecting conductive plug is formed for connection to the circuit unit by means of the first connecting via to form a sensor unit.
2. The flexible sensor manufacturing process according to claim 1, wherein the circuit unit is manufactured by a method comprising:
1) manufacturing a micro integrated circuit capable of serving as a reading and signal conditioning circuit on the surface of the second silicon wafer through a semiconductor process, and manufacturing two or more top-layer metals which are mutually separated and used for signal access of the micro integrated circuit;
2) manufacturing a second dielectric layer to completely cover the top metal, and then manufacturing second connecting through holes penetrating through the second dielectric layer to the top metal through a patterning process;
3) and manufacturing a second connecting conductive plug for bonding connection with the first connecting conductive plug by using the second connecting through hole, thereby forming a circuit unit.
3. The flexible sensor manufacturing process according to claim 2, wherein the bonding is performed by an alignment process to electrically connect the first connecting conductive plug and the second connecting conductive plug.
4. The manufacturing process of claim 2, wherein the first connecting conductive plug and the second connecting conductive plug are made of one or a combination of tungsten, copper, aluminum, titanium nitride, tantalum nitride, polysilicon and amorphous silicon.
5. The flexible sensor manufacturing process according to claim 2, wherein the micro integrated circuit is a CMOS circuit, a bipolar circuit or a thin film transistor circuit.
6. The process of claim 1, wherein processing the back side of the second silicon wafer to form a thin silicon wafer further comprises forming a second flexible substrate layer on a side of the second silicon wafer facing away from the circuit unit.
7. The manufacturing process of claim 6, wherein the first flexible substrate layer and the second flexible substrate layer are made of any one or a combination of polyimide, polyester, polyurethane, ethylene-vinyl acetate copolymer, polyolefin, epoxy resin, polycarbonate, polyamide, acrylic resin, silicone resin and parylene material.
8. The manufacturing process of claim 1, wherein the flexible sensor is a sensor with a single detection unit or an array sensor with two or more detection units.
9. A flexible sensor manufactured using the flexible sensor manufacturing process of any one of claims 1 to 8.
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| JP2013068563A (en) * | 2011-09-26 | 2013-04-18 | Fujikura Ltd | Pressure sensor |
| CN103258954B (en) * | 2012-02-17 | 2016-06-01 | 中国科学院微电子研究所 | gas sensor based on flexible substrate and preparation method thereof |
| EP2674392B1 (en) * | 2012-06-12 | 2017-12-27 | ams international AG | Integrated circuit with pressure sensor and manufacturing method |
| CN102689874A (en) * | 2012-06-20 | 2012-09-26 | 清华大学 | Three-dimensional integrated method of sensor array and signal processing circuits |
| US8878325B2 (en) * | 2012-07-31 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Elevated photodiode with a stacked scheme |
| CN203672526U (en) * | 2013-12-31 | 2014-06-25 | 浙江大学 | Flexible three-dimensional force tactile sensor based on piezoresistive and capacitive combination |
| AU2015100011B4 (en) * | 2014-01-13 | 2015-07-16 | Apple Inc. | Temperature compensating transparent force sensor |
| CN105319241A (en) * | 2014-07-04 | 2016-02-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flexible gas-sensitive sensor and making method thereof |
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