CN111235631A - Multi-seed-crystal crucible device for crystal preparation based on physical vapor transport method - Google Patents
Multi-seed-crystal crucible device for crystal preparation based on physical vapor transport method Download PDFInfo
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- CN111235631A CN111235631A CN202010196401.4A CN202010196401A CN111235631A CN 111235631 A CN111235631 A CN 111235631A CN 202010196401 A CN202010196401 A CN 202010196401A CN 111235631 A CN111235631 A CN 111235631A
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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Abstract
A multi-seed crystal crucible device for crystal preparation based on a physical vapor transport method belongs to the technical field of single crystal growth by a physical vapor transport method. The crucible comprises a crucible body, wherein an upper cover is arranged at the upper end of the crucible body, a crystal growth source material is laid at the bottom in the crucible body, a flow guide structure is placed at the top end of the crystal growth source material, a plurality of clamping grooves are formed in the upper end of the flow guide structure, the clamping grooves are fixedly connected with the bottom of a sleeve structure, a sleeve cover is arranged at the top end of the sleeve structure, and seed crystals are fixed at the upper end of the sleeve structure. According to the invention, the flow guide structure is adopted, a plurality of sleeve structures are arranged in the crucible body, seed crystals are respectively arranged above each sleeve structure, the crucible body can rotate around the shaft through the rotating mechanism when preparing the crystals, the uniformity of temperature field distribution is ensured, the simultaneous crystal growth on a plurality of seed crystals in one crucible body is realized, and the preparation speed is doubled.
Description
Technical Field
The invention belongs to the technical field of growing single crystals by a physical vapor transport method; in particular to a multi-seed crystal crucible device for crystal preparation based on a physical vapor transport method.
Background
The third generation semiconductor material is a wide bandgap semiconductor material represented by SiC, AlN, and the like, and is widely used in the fields of high frequency, microwave power devices, light emitting devices, and the like because of its excellent physical and chemical properties such as wide bandgap, high breakdown electric field, high thermal conductivity, high thermal stability, corrosion resistance, and radiation resistance.
At present, Physical Vapor Transport (PVT) is known as one of the most mature methods for growing crystals of SiC, AlN, and the like. Taking the physical vapor transport method for growing silicon carbide as an example, in a chamber for growing silicon carbide, a crucible consists of an upper cover and a lower pot, wherein the upper cover is used for fixing a seed crystal, generally called a seed crystal holder, and the lower pot is used for containing silicon carbide powder. Before growing the silicon carbide crystal, the silicon carbide seed crystal is firstly adhered to the seed crystal holder through an adhesive or is directly and mechanically fixed on the seed crystal holder in a clingy mode. When the crystal grows, the growing chamber keeps a certain temperature gradient, the silicon carbide raw material is in a high-temperature area, and the seed crystal is in a low-temperature area. And raising the temperature of the crucible to 2200-2500 ℃, so that the silicon carbide powder is sublimated, gas phase substances generated by sublimation are decomposed, and the gas phase substances are transmitted to the low-temperature seed crystal from the surface of the raw material under the action of temperature gradient, and are deposited and crystallized to generate crystals. But the stable temperature gradient suitable for crystal deposition can be obtained only in a single seed crystal in the preparation process, the crystal deposition rate is slow, and the preparation cost is high.
Disclosure of Invention
The invention aims to provide a multi-seed-crystal crucible device for crystal preparation based on a physical vapor transport method, which can finish the preparation of a plurality of crystals at one time.
The invention is realized by the following technical scheme:
the utility model provides a based on many seed crystals crucible device for preparation of physics gaseous phase transport method crystal, includes the crucible body, crucible body upper end be provided with the upper cover, the crucible body in the bottom laid crystal growth source material, crystal growth source material top placed the water conservancy diversion structure, the upper end of water conservancy diversion structure be provided with a plurality of draw-in grooves, draw-in groove fixed connection sleeve structure's bottom, sleeve structure's top be provided with the cover, the seed crystal is fixed in sleeve structure's upper end position.
The invention relates to a multi-seed crystal crucible device for crystal preparation based on a physical vapor transport method.
The invention relates to a multi-seed-crystal crucible device for preparing crystals based on a physical vapor transport method.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method is characterized in that the flow guide structure is of a thin-layer structure, the bottom of the flow guide structure is tightly connected with the crystal growth source material, two ends of the bottom of the flow guide structure are tightly connected with the edge of the inner side face of the crucible body, the flow guide structure is of a truncated cone-shaped cylindrical structure or a cylindrical structure, and the number of the clamping grooves is the same as that of the sleeve structures.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method is characterized in that the thickness of the flow guide structure is 1-5mm, the height of the flow guide structure is 10-15mm, the depth of the clamping groove is 1-2mm, the bottom angle of the circular truncated cone-shaped flow guide structure is 60 degrees, and the flow guide structure is made of one of graphite, metal tungsten, BN and metal Ta.
The multi-seed crystal crucible device for crystal preparation based on the physical vapor transport method is characterized in that the sleeve structure is a thin-layer cylindrical structure, steps are arranged on the left side and the right side of the upper end inside the sleeve structure, seed crystals are clamped at the steps at the upper end of the sleeve structure, the diameter of the sleeve structure is 0.1-1mm larger than that of the seed crystals, the thickness of the sleeve structure is 1-5mm, and the diameter of the crucible body is 2.2-3 times that of the sleeve structure.
The invention relates to a multi-seed crystal crucible device for crystal preparation based on a physical vapor transport method.
The invention relates to a multi-seed crystal crucible device for crystal preparation based on a physical vapor transport method.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method is characterized in that the number of the sleeve structures is 3 or 7.
According to the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, when the number of the sleeve structures is 3, the 3 sleeve structures are distributed in a triangular shape; when the number of the sleeve structures is 7, the 7 sleeve structures are distributed in 3 rows, 2 sleeve structures are distributed in the first row and the 3 rd row, and 3 sleeve structures are distributed in the 2 nd row.
According to the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, in a PVT method reaction furnace, a graphite hard felt is placed below a crucible body, the lower part of the graphite hard felt is supported by a metal bearing piece, the metal bearing piece is connected with the outside of the furnace body through a rotating shaft, a motor is arranged below the furnace body and drives the rotating shaft to drive, so that the crucible body in a closed space rotates at a constant speed, and the uniformity of a temperature field is improved.
According to the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, a flow guide structure is adopted, a plurality of sleeve structures are placed in a crucible body, a seed crystal is placed above each sleeve structure, the crucible body can rotate around a shaft through a rotating mechanism when the crystal is prepared, the uniformity of temperature field distribution is guaranteed, the simultaneous crystal growth on a plurality of seed crystals in the crucible body is realized, and the preparation speed is doubled.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method realizes the simultaneous growth of a plurality of seed crystals in the crucible body in the same PVT method reaction furnace, and can prepare crystals with different diameters by utilizing sleeves with different diameters.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method ensures that a plurality of crystal growing regions in the crucible have the same deposition conditions through the transmission of the rotating motor, and improves the temperature field distribution uniformity and the energy utilization efficiency.
The multi-seed crystal crucible device for crystal preparation based on the physical vapor transport method can simultaneously obtain a plurality of crystals through one growth cycle under the condition of proper selection of heat insulation materials, namely, the growth rate of the crystals is increased to be multiple times of that of the original growth method (determined by the number of inner sleeves of the crucible and the seed crystals) under the same thermal field, so that the preparation cycle is greatly shortened and the preparation cost is reduced.
Drawings
FIG. 1 is a left side view of a multi-seed crucible apparatus for physical vapor transport-based crystal preparation according to one embodiment;
FIG. 2 is a top view of a multi-seed crucible apparatus for physical vapor transport-based crystal preparation according to one embodiment;
FIG. 3 is a left side view of a multi-seed crucible apparatus for physical vapor transport-based crystal preparation according to the second embodiment;
FIG. 4 is a top view of a multi-seed crucible apparatus for physical vapor transport-based crystal preparation according to the second embodiment;
FIG. 5 is an enlarged schematic view of the sleeve structure of the multi-seed crystal crucible device for crystal preparation based on physical vapor transport method according to the present invention;
FIG. 6 is a schematic view of a cylindrical barrel structure of a multi-seed crystal crucible device for crystal preparation based on a physical vapor transport method.
Detailed Description
The first embodiment is as follows:
the utility model provides a based on many seed crystals crucible device for preparation of physics gaseous phase transport method crystal, includes crucible body 1, crucible body upper end be provided with upper cover 2, crucible body in the bottom laid crystal growth source material 3, crystal growth source material top placed water conservancy diversion structure 4, the upper end of water conservancy diversion structure be provided with a plurality of draw-in grooves 8, draw-in groove fixed connection sleeve structure 5's bottom, sleeve structure's top be provided with cover 6, seed crystal 7 is fixed in sleeve structure's upper end position.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the crucible body is in a cylindrical tubular structure, and the upper cover of the crucible body is clamped at the upper end of the crucible body.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the crucible body is made of graphite, and the upper cover of the crucible body is made of graphite.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the flow guide structure is of a thin-layer structure, the bottom of the flow guide structure is tightly connected with the crystal growth source material, two ends of the bottom of the flow guide structure are tightly connected with the edge of the inner side surface of the crucible body, the flow guide structure is of a circular truncated cone-shaped cylindrical structure, and the number of the clamping grooves is the same as that of the sleeve structures.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the thickness of the flow guide structure is 2mm, the height of the flow guide structure is 10mm, the depth of the clamping groove is 1mm, the bottom angle of the circular truncated cone-shaped flow guide structure is 60 degrees, and the flow guide structure is made of graphite.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the sleeve structure is a thin-layer cylindrical structure, steps are arranged on the left side and the right side of the upper end inside the sleeve structure, seed crystals are clamped at the position of the step 9 at the upper end of the sleeve structure, the diameter of the sleeve structure is larger than the diameter of the seed crystals by 0.5mm, the thickness of the sleeve structure is 2mm, and the diameter of the crucible body is 2.2 times of the diameter of the sleeve structure.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the sleeve structure is made of graphite.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the number of the sleeve structures is 3.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, when the number of the sleeve structures is 3, the 3 sleeve structures are distributed in a triangular shape.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method has the advantages that the effect of a flow guide structure is exerted, and the movement of the source material gasification components to the seed crystals is facilitated; the flow guide structure is in contact with the sleeve structure through the clamping groove, so that leakage is reduced, and a supporting effect is achieved; the sleeve structure is shorter, which is beneficial to reducing the conveying distance of the gasified components.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the height of the crucible body is slightly higher than the height of the sleeve structure and the height of the source material.
This embodiment a based on many seed crystals crucible device for crystal preparation of physics gaseous phase transport method, in PVT method reacting furnace, the hard felt of graphite has been placed to crucible body below, and the hard felt of graphite below holds the carrier through the metal and supports, and the metal holds the carrier and links to each other with the furnace body is external through the pivot, and the motor sets up in the furnace body below, and the motor drives the pivot transmission to crucible body uniform velocity is rotatory in realizing airtight space, increases the temperature field homogeneity.
The embodiment of the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method adopts the flow guide structure, a plurality of sleeve structures are placed inside one crucible body, the seed crystal is placed above each sleeve structure respectively, the crucible body can rotate around the shaft through the rotating mechanism when the crystal is prepared, the uniformity of temperature field distribution is ensured, the simultaneous crystal growth on a plurality of seed crystals in one crucible body is realized, and the preparation speed is doubled.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method realizes the simultaneous growth of a plurality of seed crystals in the crucible body in the same PVT method reaction furnace, and can prepare crystals with different diameters by utilizing sleeves with different diameters.
According to the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the same deposition conditions of a plurality of crystal growing regions in the crucible are ensured through the transmission of the rotating motor, and the temperature field distribution uniformity and the energy utilization efficiency are improved.
According to the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, under the condition that the heat insulation material is properly selected, a plurality of crystals are obtained simultaneously through one growth cycle, namely, under the same thermal field, the growth rate of the crystals is increased to be multiple times of that of the original growth method (determined by the number of inner sleeves of the crucible and the number of seed crystals), the preparation cycle is greatly shortened, and the preparation cost is reduced.
The second embodiment is as follows:
the utility model provides a based on many seed crystals crucible device for preparation of physics gaseous phase transport method crystal, includes crucible body 1, crucible body upper end be provided with upper cover 2, crucible body in the bottom laid crystal growth source material 3, crystal growth source material top placed water conservancy diversion structure 4, the upper end of water conservancy diversion structure be provided with a plurality of draw-in grooves 8, draw-in groove fixed connection sleeve structure 5's bottom, sleeve structure's top be provided with cover 6, seed crystal 7 is fixed in sleeve structure's upper end position.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the crucible body is of a cylindrical tubular structure, and the upper cover of the crucible body is connected to the upper end of the crucible body in a threaded manner.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the crucible body is made of metal tungsten, and the upper cover of the crucible body is made of metal tungsten.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the flow guide structure is of a thin-layer structure, the bottom of the flow guide structure is tightly connected with the crystal growth source material, two ends of the bottom of the flow guide structure are tightly connected with the edge of the inner side surface of the crucible body, the flow guide structure is of a circular truncated cone-shaped cylindrical structure, and the number of the clamping grooves is the same as that of the sleeve structures.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the thickness of the flow guide structure is 3mm, the height of the flow guide structure is 15mm, the depth of the clamping groove is 2mm, the bottom angle of the circular truncated cone-shaped flow guide structure is 60 degrees, and the flow guide structure is made of metal tungsten.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the sleeve structure is a thin-layer cylindrical structure, steps are arranged on the left side and the right side of the upper end inside the sleeve structure, seed crystals are clamped at the position of the step 9 at the upper end of the sleeve structure, the diameter of the sleeve structure is larger than the diameter of the seed crystals by 0.1mm, the thickness of the sleeve structure is 2mm, and the diameter of the crucible body is 3 times of the diameter of the sleeve structure.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the sleeve structure is made of metal tungsten.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the number of the sleeve structures is 7.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, when the number of the sleeve structures is 7, the 7 sleeve structures are distributed in 3 rows, 2 sleeve structures are distributed in the first row and the 3 rd row, and 3 sleeve structures are distributed in the 2 nd row.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method has the advantages that the effect of a flow guide structure is exerted, and the movement of the source material gasification components to the seed crystals is facilitated; the flow guide structure is in contact with the sleeve structure through the clamping groove, so that leakage is reduced, and a supporting effect is achieved; the sleeve structure is shorter, which is beneficial to reducing the conveying distance of the gasified components.
In the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the height of the crucible body is slightly higher than the height of the sleeve structure and the height of the source material.
This embodiment a based on many seed crystals crucible device for crystal preparation of physics gaseous phase transport method, in PVT method reacting furnace, the hard felt of graphite has been placed to crucible body below, and the hard felt of graphite below holds the carrier through the metal and supports, and the metal holds the carrier and links to each other with the furnace body is external through the pivot, and the motor sets up in the furnace body below, and the motor drives the pivot transmission to crucible body uniform velocity is rotatory in realizing airtight space, increases the temperature field homogeneity.
The embodiment of the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method adopts the flow guide structure, a plurality of sleeve structures are placed inside one crucible body, the seed crystal is placed above each sleeve structure respectively, the crucible body can rotate around the shaft through the rotating mechanism when the crystal is prepared, the uniformity of temperature field distribution is ensured, the simultaneous crystal growth on a plurality of seed crystals in one crucible body is realized, and the preparation speed is doubled.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method realizes the simultaneous growth of a plurality of seed crystals in the crucible body in the same PVT method reaction furnace, and can prepare crystals with different diameters by utilizing sleeves with different diameters.
According to the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the same deposition conditions of a plurality of crystal growing regions in the crucible are ensured through the transmission of the rotating motor, and the temperature field distribution uniformity and the energy utilization efficiency are improved.
According to the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, under the condition that the heat insulation material is properly selected, a plurality of crystals are obtained simultaneously through one growth cycle, namely, under the same thermal field, the growth rate of the crystals is increased to be multiple times of that of the original growth method (determined by the number of inner sleeves of the crucible and the number of seed crystals), the preparation cycle is greatly shortened, and the preparation cost is reduced.
The third concrete implementation mode:
the utility model provides a based on many seed crystals crucible device for preparation of physics gaseous phase transport method crystal, includes crucible body 1, crucible body upper end be provided with upper cover 2, crucible body in the bottom laid crystal growth source material 3, crystal growth source material top placed water conservancy diversion structure 4, the upper end of water conservancy diversion structure be provided with a plurality of draw-in grooves 8, draw-in groove fixed connection sleeve structure 5's bottom, sleeve structure's top be provided with cover 6, seed crystal 7 is fixed in sleeve structure's upper end position.
The embodiment of the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method adopts the flow guide structure, a plurality of sleeve structures are placed inside one crucible body, the seed crystal is placed above each sleeve structure respectively, the crucible body can rotate around the shaft through the rotating mechanism when the crystal is prepared, the uniformity of temperature field distribution is ensured, the simultaneous crystal growth on a plurality of seed crystals in one crucible body is realized, and the preparation speed is doubled.
The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method realizes the simultaneous growth of a plurality of seed crystals in the crucible body in the same PVT method reaction furnace, and can prepare crystals with different diameters by utilizing sleeves with different diameters.
According to the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, the same deposition conditions of a plurality of crystal growing regions in the crucible are ensured through the transmission of the rotating motor, and the temperature field distribution uniformity and the energy utilization efficiency are improved.
According to the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method, under the condition that the heat insulation material is properly selected, a plurality of crystals are obtained simultaneously through one growth cycle, namely, under the same thermal field, the growth rate of the crystals is increased to be multiple times of that of the original growth method (determined by the number of inner sleeves of the crucible and the number of seed crystals), the preparation cycle is greatly shortened, and the preparation cost is reduced.
The fourth concrete implementation mode:
according to the third specific embodiment, the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method is characterized in that the crucible body is of a cylindrical tubular structure, and the upper cover of the crucible body is connected with or clamped at the upper end of the crucible body through threads.
The fifth concrete implementation mode:
according to the third specific embodiment, the crucible body is made of one of graphite, metal tungsten, BN and metal Ta, and the upper cover of the crucible body is made of one of graphite, metal tungsten, BN and metal Ta.
The sixth specific implementation mode:
according to the third specific embodiment, the flow guide structure is of a thin-layer structure, the bottom of the flow guide structure is tightly connected with the crystal growth source material, two ends of the bottom of the flow guide structure are tightly connected with the edge of the inner side surface of the crucible body, the flow guide structure is of a truncated cone-shaped cylindrical structure or a cylindrical structure, and the number of the clamping grooves is the same as that of the sleeve structures.
The seventh embodiment:
according to the third specific embodiment, the multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method is characterized in that the thickness of the flow guide structure is 1-5mm, the height of the flow guide structure is 10-15mm, the depth of the clamping groove (8) is 1-2mm, the bottom angle of the truncated cone-shaped flow guide structure (4) is 60 degrees, and the flow guide structure is made of one of graphite, metal tungsten, BN and metal Ta.
The specific implementation mode is eight:
according to the third specific embodiment, the multi-seed-crystal crucible device for preparing crystals based on the physical vapor transport method is characterized in that the sleeve structure is a thin-layer cylindrical structure, the left side and the right side of the upper end in the sleeve structure (5) are provided with steps 9, seed crystals are clamped at the steps at the upper end of the sleeve structure, the diameter of the sleeve structure is 0.1-1mm larger than that of the seed crystals, the thickness of the sleeve structure is 1-5mm, and the diameter of the crucible body is 2.2-3 times that of the sleeve structure.
The specific implementation method nine:
according to the third specific embodiment, the multi-seed-crystal crucible device for preparing crystals based on the physical vapor transport method is characterized in that the sleeve structure is made of one of graphite, metal tungsten, BN and metal Ta.
The detailed implementation mode is ten:
according to the third embodiment, the multi-seed-crystal crucible device for preparing the crystal based on the physical vapor transport method is characterized in that the seed crystal is bonded on the end face of the sleeve cover.
The concrete implementation mode eleven:
according to the third specific embodiment, the number of the sleeve structures is 3 or 7.
The specific implementation mode twelve:
according to the third embodiment, in the PVT reaction furnace, the graphite hard felt is placed below the crucible body, the graphite hard felt is supported below the crucible body through the metal bearing part, the metal bearing part is connected with the outside of the furnace body through the rotating shaft, the motor is arranged below the furnace body and drives the rotating shaft to transmit, so that the crucible body rotates at a constant speed in a closed space, and the uniformity of a temperature field is improved.
The embodiments of the present invention are illustrative rather than restrictive, and therefore, the present invention is not limited to the embodiments described in the detailed description, and other embodiments derived from the technical solutions of the present invention by those skilled in the art also belong to the protection scope of the present invention.
Claims (10)
1. A multi-seed crystal crucible device for crystal preparation based on a physical vapor transport method is characterized in that: including crucible body (1), crucible body (1) upper end be provided with upper cover (2), crucible body (1) in the bottom laid crystal growth source material (3), crystal growth source material (3) top placed water conservancy diversion structure (4), the upper end of water conservancy diversion structure (4) be provided with a plurality of draw-in grooves (8), the bottom of draw-in groove (8) fixed connection sleeve structure (5), the top of sleeve structure (5) be provided with cover (6), seed crystal (7) are fixed in the upper end position of sleeve structure (5).
2. The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method as claimed in claim 1, wherein: the crucible body (1) is of a cylindrical tubular structure, and an upper cover (2) of the crucible body (1) is connected with or clamped at the upper end of the crucible body (1) through threads.
3. The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method as claimed in claim 1, wherein: the crucible body (1) is made of one of graphite, metal tungsten, BN and metal Ta, and the upper cover (2) of the crucible body (1) is made of one of graphite, metal tungsten, BN and metal Ta.
4. The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method as claimed in claim 1, wherein: the crucible comprises a crucible body (1), a flow guide structure (4), a crystal growth source material (3), a crystal growth source material, a flow guide structure (4), a flow guide structure and a clamping groove (8), wherein the flow guide structure (4) is of a thin-layer structure, the bottom of the flow guide structure (4) is tightly connected with the crystal growth source material (3), two ends of the bottom of the flow guide structure (4) are tightly connected with the edge of the side face of the inner portion of the crucible body (1), the flow guide structure (4) is of a circular truncated cone-.
5. The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method as claimed in claim 4, wherein: the thickness of the flow guide structure (4) is 1-5mm, the height of the flow guide structure is 10-15mm, the depth of the clamping groove (8) is 1-2mm, the bottom angle of the truncated cone-shaped flow guide structure (4) is 60 degrees, and the flow guide structure is made of one of graphite, metal tungsten, BN and metal Ta.
6. The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method as claimed in claim 1, wherein: the crucible structure is characterized in that the sleeve structure (5) is a thin-layer cylindrical structure, steps (9) are arranged on the left side and the right side of the upper end inside the sleeve structure (5), seed crystals (7) are clamped at the positions of the steps (9) on the upper end of the sleeve structure (5), the diameter of the sleeve structure (5) is larger than the diameter of the seed crystals (7) by 0.1-1mm, the thickness of the sleeve structure (5) is 1-5mm, and the diameter of the crucible body (1) is 2.2-3 times of the diameter of the sleeve structure (5).
7. The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method as claimed in claim 1, wherein: the sleeve structure is made of one of graphite, metal tungsten, BN and metal Ta.
8. The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method as claimed in claim 1, wherein: the seed crystal (7) is bonded on the end surface of the sleeve cover (6).
9. The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method as claimed in claim 1, wherein: the number of the sleeve structures (5) is 3 or 7.
10. The multi-seed-crystal crucible device for crystal preparation based on the physical vapor transport method as claimed in claim 1, wherein: in PVT method reacting furnace, the hard felt of graphite has been placed to crucible body below, and the hard felt of graphite below holds the carrier through the metal and supports, and the metal holds the carrier and links to each other outside with the furnace body through the pivot, and the motor sets up in the furnace body below, and the motor drives the pivot transmission to crucible body is at the uniform velocity rotatory in realizing airtight space, increases the temperature field homogeneity.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113122916A (en) * | 2021-04-25 | 2021-07-16 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Batch preparation device and method for PVT method single crystals |
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| CN114873570A (en) * | 2022-07-11 | 2022-08-09 | 山西中科潞安半导体技术研究院有限公司 | Method and device for purifying aluminum nitride powder by adopting PVT (polyvinyl dichloride) method |
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