CN111211106A - Wiring layer structure, preparation method thereof and bonding pad structure - Google Patents
Wiring layer structure, preparation method thereof and bonding pad structure Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2924/35—Mechanical effects
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Abstract
本发明提供一种配线层结构及其制备方法、焊盘结构，配线层结构包括电介质，电介质内嵌设有导线层，导线层包括框体和连接线，框体至少包括两个开口，将框体划分为多个区段；连接线位于框体内，具有多个连接至框体的连接端，且连接线将框体内部划分为多个区域；其中，每一区段都与任一连接线的连接端连接，每一区域都与任一开口相连通。本发明保证整个导线层和电介质分别为一体结构，提升了导线层内部与电介质的之间的接着力，强化了电介质结构的机械强度，且不增加导线连通顶部焊盘的电阻值。
The invention provides a wiring layer structure, a preparation method thereof, and a pad structure. The wiring layer structure includes a dielectric, a wire layer is embedded in the dielectric, and the wire layer includes a frame body and a connecting wire, and the frame body includes at least two openings. The frame is divided into a plurality of sections; the connecting line is located in the frame and has a plurality of connecting ends connected to the frame, and the connecting line divides the inside of the frame into a plurality of areas; wherein each section is connected to any one of the sections. The connecting ends of the connecting lines are connected, and each area communicates with any opening. The invention ensures that the entire wire layer and the dielectric are respectively integrated into a structure, improves the bonding force between the wire layer and the dielectric, strengthens the mechanical strength of the dielectric structure, and does not increase the resistance value of the wire connecting the top pad.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wiring layer structure and a preparation method thereof, and further relates to a bonding pad structure.
Background
In the field of semiconductor manufacturing, pads are widely used to connect a semiconductor die to a component package lead, and good electrical conductivity and mechanical strength are required for the pads.
The pad structure generally includes a wiring layer for laying out input/output ports of the pad, thereby improving performance and reliability of the integrated circuit package. The conventional wiring layer has poor structural mechanical strength, and when a lead bonding and pulling welding wire is packaged, the risk that a bonding pad and a dielectric medium in the wiring layer are pulled up or partially peeled off is easily caused, so that the bonding pad structure is damaged.
The above information disclosed in the background section is only for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not constitute prior art that is known to a person of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide a wiring layer structure and a preparation method thereof, which can improve the mechanical strength of a wiring layer on the premise of not increasing the resistance value.
Another object of the present invention is to provide a pad structure.
According to an aspect of the present invention, there is provided a wiring layer structure including:
a dielectric;
the wire layer is embedded in the dielectric medium and comprises a frame body and a connecting wire; the frame body at least comprises two openings, and the openings divide the frame body into a plurality of sections; the connecting line is positioned in the frame body and provided with a plurality of connecting ends connected to the frame body, and the connecting line divides the interior of the frame body into a plurality of areas; wherein each of the segments is connected to a connection end of any of the connection lines, and each of the regions is in communication with any of the openings.
In an exemplary embodiment of the present invention, the connection line includes a plurality of conductive lines in a line shape, and a plurality of the conductive lines are in contact with or cross each other.
In an exemplary embodiment of the invention, a plurality of the conductive lines are arranged symmetrically or asymmetrically.
In an exemplary embodiment of the present invention, the number of the conductive wires is 1 to 3.
In an exemplary embodiment of the invention, the openings are symmetrically or asymmetrically distributed in the frame body.
In an exemplary embodiment of the invention, the number of the openings is 2 to 4.
In an exemplary embodiment of the present invention, the frame body is rectangular, the number of the openings is four, and the connecting line includes two wires; the four openings are respectively positioned at four right-angle positions of the frame body, the two wires are vertically crossed, and two ends of any wire are respectively connected with the middle point of the frame body;
in an exemplary embodiment of the present invention, the frame body is rectangular, the number of the openings is four, and the connecting line includes two wires; the four openings are respectively positioned in the centers of four frames of the frame body, the two wires are crossed, and two ends of any wire are respectively connected with the right-angle top points opposite to the frame body.
In an exemplary embodiment of the present invention, the frame body is rectangular, the number of the openings is four, and the connection line includes three wires; wherein,
the four openings are respectively positioned at the centers of four frames of the frame body, wherein two wires are respectively connected with the sections of the two frames on the same side, and the third wire is connected with the middle points of the other two wires. In an exemplary embodiment of the invention, the wire layer is located on one side of the pad metal layer, and the wiring layer further includes a via embedded in the dielectric and electrically connected to the wire layer for connecting the wire layer with the pad metal layer.
In an exemplary embodiment of the present invention, the wiring layer further includes a plurality of conductive layers located on a side of the wiring layer away from the pad metal layer; the conductive layers are electrically connected with each other, and the conductive layers are electrically connected with the lead layers.
In an exemplary embodiment of the invention, a material of the wire layer includes one or more of copper, aluminum, and tungsten.
According to another aspect of the present invention, there is also provided a method of manufacturing a wiring layer structure, including:
the method comprises the steps of forming a first dielectric layer, forming a lead layer in the first dielectric layer, wherein the lead layer comprises a frame body and a connecting line, the frame body at least comprises two openings, the connecting line is located in the frame body and provided with a plurality of connecting ends connected to the frame body, the connecting line divides the interior of the frame body into a plurality of areas, and each area is communicated with any opening.
In an exemplary embodiment of the present invention, a second dielectric layer is formed on the first dielectric layer to cover the first dielectric layer, and a via hole electrically connected to the wire layer is formed in the second dielectric layer.
In an exemplary embodiment of the present invention, forming a conductive line layer or a via hole in the dielectric layer includes:
coating photoresist on the corresponding dielectric layer, exposing, developing, etching and stripping to form a groove or a through hole;
depositing a conductive material in the groove to form the wire layer; and depositing a conductive material in the through hole to form the through hole.
According to still another aspect of the present invention, there is also provided a pad structure including:
the above-described wiring layer structure;
and the pad metal layer is arranged on the wiring layer structure and is electrically connected with the wiring layer structure.
In an exemplary embodiment of the present invention, the wiring layer and the pad metal layer of the wiring layer structure are electrically connected through a via hole.
In an exemplary embodiment of the present invention, further comprising: and the protective layer covers above the pad metal layer and is provided with an opening so as to expose the pad metal layer. The lead layer in the wiring layer structure consists of an external frame body and internal connecting wires, wherein the frame body is opened, each area in the frame body is communicated with any opening, and each section of the frame body is connected with the connecting end of any connecting wire. Compared with the prior art, the invention ensures that the whole wire layer and the dielectric medium are respectively of an integrated structure, improves the bonding force between the inside of the wire layer and the dielectric medium, and does not increase the resistance value of the wire communicated with the top bonding pad because the wire layer is not blocked. In addition, the dielectric is also an integral structure and is not cut off by the conducting wire layer, the mechanical strength of the dielectric structure is enhanced, and when the packaging, routing and pulling welding wire process is pulled upwards, the whole wiring layer can provide more effective resistance so as to protect the structure of the bonding pad.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a schematic diagram of a large-area metal structure of a wiring layer in a conventional wiring layer;
FIG. 2 is a schematic view showing the structural damage of a conventional wiring layer;
FIG. 3 is a schematic diagram of a fence-shaped structure of a conductive wire layer in a conventional wiring layer;
FIG. 4 is a schematic diagram of a conventional mesh-shaped cut-out structure of a wiring layer;
FIG. 5 is a schematic diagram of a structure of a wiring layer in the wiring layer according to the present invention;
FIG. 6 is a schematic diagram of a frame in a wire layer according to the present invention;
FIG. 7 is a schematic diagram of a connection line structure in a conductive line layer according to the present invention;
FIG. 8 is a schematic view of another structure of a conductive line layer according to the present invention;
FIG. 9 is a schematic view of another structure of a conductive line layer according to the present invention;
FIG. 10 is a schematic flow chart of a wiring layer manufacturing method of the present invention;
FIGS. 11-13 are schematic views of the structure of the lead layer during the manufacturing process of the present invention;
FIG. 14 is a schematic view of a via structure according to the present invention;
FIG. 15 is a diagram illustrating a pad metal layer structure according to the present invention;
FIG. 16 is a schematic structural diagram of a passivation layer according to the present invention.
In the figure, 1, dielectric; 2. a conductor layer; 3. a via hole; 4. a wiring layer; 5. a pad metal layer; 6. photoresist; 7. a protective layer; 11. a first dielectric layer; 12. a second dielectric layer; 21. a frame body; 22. a connecting wire; 23. and (4) opening.
In fig. 1, 3-5, 11-16, the top is a plan view, and the bottom is a structural section view at the top a-a.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
In the related art, when the conductive material in the wiring layer is designed as a large-area metal structure (Bulk Type, as shown in fig. 1), due to poor bonding force between the large-area metal and the dielectric, the bonding pad structure may be damaged by the risk of being pulled up or partially peeled off together with the dielectric when the wire bonding and pulling bonding wire is packaged, as shown in fig. 2.
It is common practice in the industry to design the conductive material in the wiring layer to be a fence (Bar Type, as shown in fig. 3), so as to reduce the contact area with the dielectric, but the resistance of the wiring is increased because the wiring is cut. The other is a mesh Type (mask Type, as shown in fig. 4) design, which can keep the circuit open, but the dielectric is chopped, and the chopped dielectric has poor adhesion to each other and poor mechanical strength.
The embodiment of the invention provides a wiring layer structure which is used for laying out input and output ports of a bonding pad, so that the performance and the reliability of integrated circuit packaging are improved.
As shown in fig. 5, the wiring layer structure according to the embodiment of the present invention includes a dielectric 1, a conductive line layer 2 is embedded in the dielectric 1, the conductive line layer 2 includes a frame 21 and a connection line 22, the frame 21 includes at least two openings 23, and the frame 21 is divided into a plurality of sections; the connecting line 22 is located in the frame 21 and has a plurality of connecting ends connected to the frame 21, and the connecting line 22 divides the inside of the frame 21 into a plurality of regions; wherein each section is connected to a connection end of any one of the connection lines 22 and each region is in communication with any one of the openings 23.
The structure designs the frame body into an opening structure, and each area inside the frame body is communicated with any opening, so that the whole dielectric material inside and outside the frame body is still of an integral structure. Each section of the frame 21 is connected with the connecting end of any connecting wire 22, so that the wire layer 2 is ensured to be an integral connecting structure. This structure has combined the advantage of current rail shape and netted shredding shape structure, compares the rail shape, has promoted the power of adhesion of wire layer 2 with dielectric 1, and because wire layer 2 is not blocked, also does not increase the resistance value of wire intercommunication top pad. In addition, the dielectric 1 is also a whole structure without being cut by the wire layer 2, compared with the net-shaped cutting shape, the mechanical strength of the structure of the dielectric 1 is enhanced, and when the packaging wire bonding traction welding wire process generates upward pulling, the whole wiring layer can provide more effective resistance to protect the structure of the bonding pad.
The following describes the wiring layer structure in detail in accordance with an embodiment of the present invention, taking the wiring layer as a rectangular structure as an example:
the dielectric in the wiring layer functions as an insulator, and may be an inorganic dielectric material, an organic dielectric material, or the like, and the material and size of the dielectric may be selected and set as necessary. In the above embodiments, the dielectric material may be a mixture of one or more of silicon oxide, silicon nitride, and silicon oxynitride. The wiring layer in the wiring layer is a layer made of a conductive material, and the material of the wiring layer is one of metal materials such as copper, aluminum, tungsten and the like, or a combination of any two of the metal materials. The shape of the wiring layer may be determined according to the pad shape, including but not limited to a circle, a square, an octagon, etc., which are not listed here.
The shape of the frame 21 of the wire layer includes, but is not limited to, circular, rectangular and other polygonal shapes as desired. The opening 23 on the frame body completely breaks the frame body into a plurality of independent sections, and the shape of the opening is not limited, and the opening can be a rectangular opening, or an opening such as a trapezoid, a parallelogram and the like. The position of the opening may be at any position of the frame, for example, the center of a certain line, or the intersection of two lines. The size and thickness of the frame of the present invention may be set according to actual needs, and the present invention is not particularly limited thereto. The number of the frame openings is at least two. If there is only one opening, the frame body is divided into a single area regardless of the shape of the connection line, and the integrity of the whole dielectric is damaged, which affects the mechanical strength of the wiring layer. Regardless of the number of openings, the openings may be symmetrically or asymmetrically distributed.
In the exemplary embodiment, the number of the openings may be 2 to 4, and if the number of the openings is too large, the frame body is divided into more sections, and more connecting lines are needed for connection, which is inconvenient to process.
For example, the frame body 21 is rectangular, and the number of the openings may be two, and the openings are respectively located at the centers of two opposite straight sides of the rectangular frame body 21, as shown in (a) in fig. 6, or located at two opposite corners of the rectangular frame body 21, as shown in (b) in fig. 6, or located at the centers of two adjacent straight sides, as shown in (c) in fig. 6, or located at the centers of the same straight side of the rectangular frame body 21, as shown in (h) in fig. 6. The number of openings may also be three, as shown in fig. 6 (f), at the center or non-center position of three of the straight sides. The number of the openings may also be four, and the openings are respectively located at the centers of four straight sides of the rectangular frame body 21, as shown in (d) of fig. 6, or located at non-central points of four straight sides of the rectangular frame body 21, as shown in (g) of fig. 6, or located at four right corners of the rectangular frame body 21, as shown in (e) of fig. 6.
The connecting line 22 may be composed of one conducting line or a plurality of conducting lines, and each conducting line may be a straight line, a curved line or a broken line. If only by a wire, this connecting wire only has two link, if the connecting wire is made up by many wires, this connecting wire then has a plurality of links, and a plurality of wires can symmetrical arrangement, also can asymmetric arrangement. In addition, the connecting wire can also be formed by combining a conducting wire and other solid conductors, for example, a solid circular conductor at the center, and a plurality of conducting wires are connected to the periphery of the circular conductor. The present invention is not described in detail. The thickness of the connecting wire can be set according to actual needs, and the invention does not specially limit the thickness. No matter how many wires the connecting wire is composed of or how many connecting ends are provided, the connecting wire is a whole body instead of a dispersed line combination which is not connected with each other.
In some exemplary embodiments of the present invention, the connection line includes a plurality of conductive lines in a shape of a line, and the plurality of conductive lines contact or cross each other. The wiring is performed by the line-shaped conducting wire, so that the resistance value can be reduced, and a larger area of dielectric medium 1 material can be reserved as much as possible, so that the interlayer adhesion force and the mechanical strength are improved.
In an exemplary embodiment of the present invention, the number of the conductive wires is 1 to 3. If the number of the wires is too large, the frame body needs more sections, i.e. more openings, which is inconvenient to process. As shown in fig. 7, the connecting line 22 may be formed by one, two or three strip-shaped wires crossing or contacting each other. For example, as shown in fig. 7 (I), the frame 21 has an opening at the center of each of four straight sides, and is divided into four sections, and the connection line 22 is composed of three conductive lines, wherein two conductive lines are symmetrically arranged in a zigzag shape, each of the two conductive lines connects two sections, and the third conductive line is in a straight shape, and connects two zigzag lines to form a conductive line. Alternatively, as shown in fig. 7 (II), each of the four right-angle corners of the frame 21 has an opening, which is divided into four sections, and the connection line 22 is formed by crossing two wires. Further alternatively, as shown in fig. 7 (III), the frame 21 has two openings on one straight side, which are divided into two sections, and the connecting line 22 is a curve connecting the two sections. As shown in fig. 7 (IV), each of the four right-angle corners of the frame 21 has an opening, which is divided into four sections, the connection line 22 is composed of three linear wires, the three linear wires form an H-shape, two wires on two sides are respectively connected to the two sections, and the third linear wire is connected to the two wires on two sides. In other exemplary embodiments, the connecting wires 22 may also be composed of more wires, which are not listed here.
It should be noted that each section of the frame body of the present invention needs to be connected to any connecting terminal of a connecting wire, and each internal area needs to be communicated with any opening, so as to ensure the integrity of the conducting wire layer and the dielectric layer.
In an exemplary embodiment of the present invention, as shown in fig. 5, the frame body 21 is rectangular, the number of the openings on the frame body 21 is four, the openings are respectively located at four right angles of the frame body 21, the connection line 22 includes two straight-line-shaped wires, the two straight-line-shaped wires are perpendicularly crossed, and two ends of any one of the two straight-line-shaped wires are respectively connected with a middle point of a frame of the frame body 21, i.e., a cross is formed, so that the whole wire layer forms a symmetrical structure. Under the structure, enough current can be provided to be communicated to the welding pad, and the most reliable interlayer bonding force and mechanical strength can be provided so as to resist the upward pulling force when the packaging pulls the welding wire.
In another exemplary embodiment of the present invention, as shown in fig. 8, the frame body 21 is rectangular, the number of the openings on the frame body 21 is four, the openings are respectively located at the centers of four frames of the frame body 21, the connection line 22 includes two linear conductive lines, the two linear conductive lines intersect, and two ends of any one of the linear conductive lines are respectively connected with opposite right-angled vertices of the frame body 21, i.e., an x-shaped structure is formed, so that the whole conductive line layer forms a symmetrical structure. The structure is similar to a cross structure, can provide enough current amount to be communicated to a welding pad, and can provide the most reliable interlayer bonding force and mechanical strength to resist the upward pulling force when packaging a traction welding line.
In another exemplary embodiment of the present invention, as shown in fig. 9, the frame 21 is rectangular, the number of the openings on the frame 21 is four, and the openings are respectively located at the centers of four frames of the frame 21, the connection line 22 includes three linear wires, two of the wires are respectively connected to two segments located on the same side, and the third wire is connected to the middle points of the other two wires, i.e., an H-shaped structure is formed, so that the whole wire layer forms a symmetrical structure. The structure is similar to a cross structure, can provide enough current amount to be communicated to a welding pad, and can provide the most reliable interlayer bonding force and mechanical strength to resist the upward pulling force when packaging a traction welding line.
In an exemplary embodiment of the present invention, the wiring layer further includes a via hole 3, as shown in fig. 5, the via hole 3 being embedded in the dielectric, electrically connected to the wiring layer, for connecting the wiring layer with the pad metal layer. The pad metal layer is generally located above the wiring layer. The via hole 3 plays a role of connection and conduction for electrically connecting the wire layer and the pad metal layer, and may be provided only on any one surface of the wire layer. The material of the vias may be the same as or different from the material of the conductor layer. The number, pitch, aperture, depth, etc. of the vias may be set as desired, and the present invention is not particularly limited thereto. Of course, the wire layer and the pad metal layer may be connected in other manners.
In an exemplary embodiment of the present invention, the wiring layer further includes a plurality of conductive layers for providing more structures containing conductive materials to facilitate further arrangement or optimization of the conductive lines. The number of the conducting layers can be one or multiple, and the conducting layers are stacked on one side of the conducting wire layer far away from the pad metal layer. The conductive layers are electrically connected with each other, and the conductive layers are also electrically connected with the lead layers. The electrical connection may be a direct contact connection or may be through a via. The structure of the conductive layer may be the same as or different from that of the conductive layer, and the structures of the conductive layers may be the same or different from each other, which is not particularly limited in the present invention.
An embodiment of the present invention also provides a method of manufacturing the above wiring layer structure, as shown in fig. 10, including:
step 110 is to form a first dielectric layer 11 and form a conductive line layer in the first dielectric layer.
Further, in step 110, forming a conductive line layer in the first dielectric layer may include:
at step 111, a photoresist 6 is coated on the first dielectric layer 11 according to the conductive line layer structure, and the photoresist may be a positive photoresist or a negative photoresist. Taking the positive photoresist as an example, the photoresist is opened by exposing, developing, photoetching and etching, so that the shape of the photoresist opening is consistent with the design shape of the lead layer, as shown in fig. 11.
At step 112, the opening portion not covered and protected by the photoresist is removed by another etching solution to form a recess, so as to achieve the purpose of transferring the pattern on the photoresist to the underlying material, and lift off, as shown in fig. 12.
In step 113, a conductive material is deposited in the groove by a physical vapor deposition method, a plating method, or the like, and then the surface is polished by a chemical mechanical polishing process to form a conductive line layer, as shown in fig. 13.
In an exemplary embodiment, the wiring layer structure further includes a via hole, and the manufacturing method further includes:
in step 210, a second dielectric layer 12 is formed on the first dielectric layer 11 to cover the first dielectric layer, and a via hole electrically connected to the conductive line layer is formed in the second dielectric layer 12.
Further, forming a via in the second dielectric layer to be electrically connected to the wire layer, similar to forming the wire layer, may include:
step 211, according to the structure of the conductive line layer, coating a photoresist on the first dielectric layer on which the conductive line layer has been formed, taking a positive photoresist as an example, exposing, developing, photoetching, etching, and opening the photoresist so that the shape of the photoresist opening is consistent with the design shape of the via hole.
At step 212, the opening portion not covered and protected by the photoresist is removed by another etching solution to form a via hole.
In step 213, a conductive material is deposited in the through hole, the deposition method may be physical vapor deposition or electroplating, and then the surface is polished by a chemical mechanical polishing process to form a via hole, and the bottom of the via hole is electrically connected to the conductive line layer, as shown in fig. 14.
The above embodiment is merely an example, and the description of the steps is only an embodiment, and not a limitation on the steps of the preparation method of the present invention. The invention can also form a via hole in one dielectric layer and form a wire layer in the other dielectric layer.
The embodiment of the present invention further provides a pad structure, as shown in fig. 15, the pad structure includes the wiring layer 4 in the above embodiment, and further includes a pad metal layer 5, and the pad metal layer 5 is disposed on the wiring layer 4 and is electrically connected to the wiring layer 4. Because the structure of the wiring layer is firmer, the bonding pad of the invention also has better mechanical strength and can resist the acting force when the packaging lead is bonded with the traction welding wire.
The bonding pad can be used for mounting various electronic components, the shape of the bonding pad can be round, square, octagonal and the like, and the packaging mode can be wire bonding, stitch type or surface mounting type. Correspondingly, the shape of the electronic component can be various shapes such as rectangle, circle, rhombus and the like. The pads of the present invention may also be used in a variety of circuit board configurations, not to mention one. The pad metal layer is used for bonding with an external lead, and for facilitating the formation of an electrical connection, the pad metal layer may be a monolithic conductive material, and the material may be one or more of copper, aluminum, and tungsten, or may be other materials capable of conducting electricity.
In an exemplary embodiment of the present invention, the pad metal layer 5 is formed by depositing a metal material on the wiring layer, as shown in fig. 15. The wiring layer 2 in the pad wiring layer 4 and the pad metal layer 5 are electrically connected through the via hole 3.
In an exemplary embodiment of the present invention, the pad structure may further include a protective layer 7 located around and above the pad metal layer 5, as shown in fig. 16. The passivation layer 7 is also made of an insulating material, such as polyimide, and the passivation layer 7 has an opening in the center to expose the pad metal layer 5 for electrical connection with other external structures.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
The terms "a," "an," "the," "said," and "at least one" are used to indicate the presence of one or more elements/components/parts/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Claims (18)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811391850.3A CN111211106A (en) | 2018-11-21 | 2018-11-21 | Wiring layer structure, preparation method thereof and bonding pad structure |
| PCT/CN2019/119760 WO2020103875A1 (en) | 2018-11-21 | 2019-11-20 | Distribution layer structure and manufacturing method thereof, and bond pad structure |
| US17/109,783 US11587893B2 (en) | 2018-11-21 | 2020-12-02 | Distribution layer structure and manufacturing method thereof, and bond pad structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811391850.3A CN111211106A (en) | 2018-11-21 | 2018-11-21 | Wiring layer structure, preparation method thereof and bonding pad structure |
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| CN111211106A true CN111211106A (en) | 2020-05-29 |
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| CN201811391850.3A Pending CN111211106A (en) | 2018-11-21 | 2018-11-21 | Wiring layer structure, preparation method thereof and bonding pad structure |
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| CN102157506A (en) * | 2010-01-22 | 2011-08-17 | 夏普株式会社 | Light emitting device |
| CN102316278A (en) * | 2010-07-07 | 2012-01-11 | 佳能株式会社 | Solid-state imaging apparatus and imaging system |
| US20180139847A1 (en) * | 2013-03-04 | 2018-05-17 | Longitude Semiconductor S.A.R.L. | Semiconductor device |
| WO2018123955A1 (en) * | 2016-12-28 | 2018-07-05 | 三井金属鉱業株式会社 | Wiring structure and production method therefor, sputtering target material, and method for preventing oxidation |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102157506A (en) * | 2010-01-22 | 2011-08-17 | 夏普株式会社 | Light emitting device |
| CN102316278A (en) * | 2010-07-07 | 2012-01-11 | 佳能株式会社 | Solid-state imaging apparatus and imaging system |
| US20180139847A1 (en) * | 2013-03-04 | 2018-05-17 | Longitude Semiconductor S.A.R.L. | Semiconductor device |
| WO2018123955A1 (en) * | 2016-12-28 | 2018-07-05 | 三井金属鉱業株式会社 | Wiring structure and production method therefor, sputtering target material, and method for preventing oxidation |
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