CN111211040A - Wafer thinning method, jig and waxing device - Google Patents
Wafer thinning method, jig and waxing device Download PDFInfo
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- CN111211040A CN111211040A CN202010021131.3A CN202010021131A CN111211040A CN 111211040 A CN111211040 A CN 111211040A CN 202010021131 A CN202010021131 A CN 202010021131A CN 111211040 A CN111211040 A CN 111211040A
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- 238000004018 waxing Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000000919 ceramic Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 238000003825 pressing Methods 0.000 claims abstract description 14
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 10
- 239000010980 sapphire Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 156
- 239000000463 material Substances 0.000 description 7
- 238000005498 polishing Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to a wafer thinning method, a jig and a waxing device. The method comprises the following steps: bonding the semiconductor substrate wafer and the substrate wafer together to form a wafer to be thinned; placing a ceramic disc on a bearing table of a waxing device, dropping wax on the position of a wafer on the ceramic disc, and placing the wafer to be thinned above the wax; the ring jig with the external diameter less than the diameter of treating the attenuate disk is placed with one heart on treating the attenuate disk, pushes down the film clamp and treats the flattening of attenuate disk, takes out the jig of placing on treating the attenuate disk, carries out the attenuate technology to treating the attenuate disk on the pottery dish. The ring jig with the outer diameter smaller than the diameter of the wafer to be thinned is concentrically placed on the wafer to be thinned, the pressing device of the waxing device is pressed downwards to smooth the wafer to be thinned, the bonded wafer can be thinned with better uniformity after being thinned by the aid of the sapphire fog surface, the bonded wafer is uniformly thinned, the yield of the wafer is improved, and production cost is reduced.
Description
Technical Field
The invention relates to the field of photoelectric technology, in particular to a wafer thinning method, a waxing device and a jig.
Background
A typical Light Emitting Diode (LED) vertical product is subjected to thick sheet bonding, that is, after a sapphire wafer and a silicon wafer are integrated together at a high temperature, a matte surface of the sapphire wafer surface needs to be removed through a thinning process to expose transparent sapphire therein, and a technician finds that the bonded wafer cannot be uniformly thinned when the matte surface of the sapphire wafer is thinned, and the uniformity of the thinned wafer is poor.
Disclosure of Invention
In view of the above, it is necessary to provide a new wafer thinning method, a jig and a waxing device for solving the above-mentioned problem that the bonded wafer cannot be thinned uniformly.
A method of wafer thinning, the method comprising:
one surface of a semiconductor substrate wafer and a light-emitting structure surface of a substrate wafer with an electroluminescent structure are attached together and subjected to heat treatment, so that the semiconductor substrate wafer and the substrate wafer are bonded together to serve as a wafer to be thinned;
placing a ceramic disc on a bearing table of a waxing device;
dropping wax onto the disc locations on the ceramic disc;
placing the wafer to be thinned above the wax, wherein the semiconductor substrate wafer surface of the wafer to be thinned is in contact with the wax;
placing a jig on the wafer to be thinned, wherein the jig and the wafer to be thinned are placed concentrically, the jig is a circular ring jig, and the outer diameter of the jig is smaller than the diameter of the wafer to be thinned;
pressing down a tabletting device of the waxing device to flatten the wafer to be thinned;
lifting the tabletting device of the waxing device, and taking out the jig placed on the wafer to be thinned;
and carrying out a thinning process on the wafer to be thinned on the ceramic disc.
In one embodiment, before the raising of the sheeting device of the waxing device, the method further comprises:
performing cooling of the ceramic disc;
and detecting the temperature of the ceramic disc in real time until the temperature is less than or equal to 30 ℃, and then lifting a tabletting device of the waxing device.
In one embodiment, the thinning process of the wafer on the ceramic disc comprises:
and carrying out thinning process on the product on the ceramic disc by using a thinning grinding wheel.
In one embodiment, the thinning process comprises two steps of rough polishing and fine polishing.
In one embodiment, the difference in thickness between the discs to be thinned on the ceramic discs is less than 20 microns.
In one embodiment, the wafer to be thinned on the ceramic disc is subjected to a thinning process for thinning to form the vertical wafer of the light emitting diode.
In one embodiment, the semiconductor substrate wafer is a silicon wafer, and the substrate wafer is a sapphire wafer.
In one embodiment, the process of thinning the wafer to be thinned on the ceramic disc comprises the steps of thinning the substrate sheet until the surface of the substrate sheet is transparent;
the method comprises the following steps of carrying out a thinning process on a wafer to be thinned on the ceramic disc: the substrate sheet is peeled from the semiconductor substrate wafer using a laser lift-off process, and the electroluminescent structure is transferred onto the semiconductor substrate wafer.
The wafer thinning method comprises the following steps: one surface of a semiconductor substrate wafer and a light-emitting structure surface of a substrate wafer with an electroluminescent structure are attached together and subjected to heat treatment, so that the semiconductor substrate wafer and the substrate wafer are bonded together to serve as a wafer to be thinned; placing a ceramic disc on a bearing table of a waxing device, dropping wax on the position of a wafer on the ceramic disc, placing the wafer to be thinned above the wax, and contacting the semiconductor substrate wafer surface of the wafer to be thinned with the wax; placing a jig on the wafer to be thinned, wherein the jig and the wafer to be thinned are placed concentrically, the jig is a circular ring jig, and the outer diameter of the jig is smaller than the diameter of the wafer to be thinned; and pressing the tabletting device of the waxing device downwards to smooth the wafer to be thinned, lifting the tabletting device of the waxing device, taking out the jig placed on the wafer to be thinned, and thinning the wafer to be thinned on the ceramic disc. Through placing the external diameter through concentric on the disk that needs the attenuate and being less than treat the ring tool of the diameter of attenuate disk, the film clamp that will wax the device pushes down and treats the level and smooth of attenuate disk, can obtain the better attenuate disk of homogeneity after carrying out the sapphire matte attenuate to the disk after the bonding, has realized the even attenuate to the bonding disk, has improved the yields of disk, has reduced manufacturing cost.
The utility model provides a jig, the tool is used for treating the attenuate technology of attenuate disk, the tool uses with the waxing attachment cooperation, the tool is the ring tool, the tool with treat that the attenuate disk is placed with one heart, just the external diameter of tool is less than treat the diameter of attenuate disk, the film clamp of waxing attachment pushes down treat that the tool on the attenuate disk goes on treat the level and smooth of attenuate disk.
In one embodiment, the ratio of the inner diameter of the jig to the diameter of the wafer to be thinned is equal to 0.5, the ratio of the outer diameter of the jig to the diameter of the wafer to be thinned is equal to 0.75, and the thickness of the jig is less than or equal to 1 mm.
In one embodiment, the jig is made of a flexible material, and the uniformity of the thickness of the jig is less than or equal to 2 microns.
In one embodiment, the jig is made of a silicone material.
Above-mentioned tool for treat the attenuate technology of attenuate disk, the tool uses with the waxing attachment cooperation, the tool is the ring tool, the tool with treat that the attenuate disk is placed with one heart, just the external diameter of tool is less than treat the diameter of attenuate disk, the film clamp of waxing attachment pushes down treat that the tool on the attenuate disk goes on treat the level and smooth of attenuate disk. Through placing above-mentioned external diameter on the disk that needs the attenuate with one heart and being less than treat behind the ring tool of the diameter of attenuate disk, the film clamp of waxing attachment pushes down treat that the tool on the attenuate disk goes on treat the level and smooth of attenuate disk, can reach the purpose that obtains the better attenuate disk of homogeneity after carrying out the attenuate to the disk after the bonding, realized the even attenuate to the bonding disk, improved the yields of disk, reduced manufacturing cost.
The utility model provides a waxing attachment, includes plummer and film clamp, the plummer is used for placing treats the attenuate disk, film clamp can the plummer top reciprocates for it levels to push down treat the attenuate disk on the plummer, waxing attachment includes above-mentioned arbitrary tool, the tool is placed film clamp's below, the tool is used for film clamp pushes down and levels when treating the attenuate disk level the disk.
In one embodiment, the jig is mounted on a first surface of the sheeting device, which is the surface of the sheeting device that contacts the wafer to be thinned.
Above-mentioned waxing attachment, including plummer and film clamp, the plummer is used for placing treats the attenuate disk, film clamp is in the plummer top reciprocates for push down and level the attenuate disk of treating on the plummer, waxing attachment still includes above-mentioned arbitrary tool, the tool is placed film clamp's below, the tool is used for film clamp pushes down and levels when treating the attenuate disk level the disk. The outer diameter of the ring jig is smaller than the diameter of the wafer to be thinned by placing the ring jig below the pressing device of the waxing device, the pressing device presses downwards to be flattened when the wafer to be thinned is to be thinned, the jig assists in flattening the wafer to be thinned, so that when the wafer to be thinned after waxing is thinned, the purpose of obtaining the thinned wafer with better uniformity after thinning can be achieved, the uniform thinning of the bonded wafer is realized, the yield of the wafer is improved, and the production cost is reduced.
Drawings
FIG. 1 is a flow chart of a method for wafer thinning in one embodiment;
FIG. 2 is a schematic view of a wafer to be thinned in one embodiment;
FIG. 3 is a flow chart illustrating the waxing device before the sheeting apparatus is raised in one embodiment.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein the term "and/or" includes any and all combinations of one or more of the associated listed items.
In one embodiment, as shown in fig. 1, a method for wafer thinning is provided, including:
and S102, obtaining a wafer to be thinned through a bonding process.
And attaching one surface of the semiconductor substrate wafer and the light-emitting structure surface of the substrate sheet with the electroluminescent structure, and performing heat treatment, so that the semiconductor substrate wafer and the substrate sheet are bonded together to form the wafer to be thinned.
In one embodiment, the semiconductor substrate wafer is a silicon wafer, and the substrate wafer is a sapphire wafer.
And S104, placing the ceramic disc on a bearing table of a waxing device.
And S106, dropping the wax on the position of the wafer on the ceramic disc.
After the ceramic disc is placed on a bearing table of the waxing device, the heating device of the waxing device starts to heat the ceramic disc, and after the ceramic disc is heated to a set temperature, the wax dropping device of the waxing device starts to drop wax to the position of the wafer on the ceramic disc, namely the position where the wafer to be thinned is subsequently placed.
In one embodiment, the wax dripping device drips the wax on the ceramic disc according to the wafer placing sequence of the wafer positions and the number of the wafers to be thinned, so that the wax is prevented from dripping at positions where the wafers to be thinned are not placed, and the aim of reducing the production cost is fulfilled.
In one embodiment, the position of the disks on the ceramic disk is not fixed, and the position of the disks can be set according to the size of the disks to be thinned, the number of disks to be thinned, and the like.
And S108, placing the wafer to be thinned on the ceramic disc.
And placing the wafer to be thinned above the wax, wherein the semiconductor substrate wafer surface of the wafer to be thinned is in contact with the wax.
In one embodiment, after the wax dropping device finishes dropping the wax, a mechanical arm of the wax applying device places the wafer to be thinned above the wax, the wafer to be thinned is preliminarily fixed on a ceramic disc, the semiconductor substrate wafer surface of the wafer to be thinned is contacted with the wax, and the substrate surface is exposed to the environment. In one embodiment, the number of wafers to be thinned placed on the same ceramic disk is related to the size of the wafers to be thinned, the number of wafers to be thinned, the size of the ceramic disk, the shape of the ceramic disk, and the like. In one embodiment, the number of wafers to be thinned placed on the same ceramic disk is greater than or equal to 1, e.g., 3,4,5,6, etc.
And S110, placing the jig on the wafer to be thinned.
The jig is placed on the wafer to be thinned, the jig and the wafer to be thinned are placed concentrically, the jig is a circular ring jig, and the outer diameter of the jig is smaller than the diameter of the wafer to be thinned.
In one embodiment, a jig is placed at the warping position of the wafer to be thinned, and the jig is used for pressing the warping convex parts of the wafer to be thinned.
In one embodiment, the ratio of the inner diameter of the jig to the diameter of the wafer to be thinned is equal to 0.5, the ratio of the outer diameter of the jig to the diameter of the wafer to be thinned is equal to 0.75, and the thickness of the jig is less than or equal to 1 mm. In actual production, the jig can be set into wafer jigs with different sizes and thicknesses according to process requirements.
In one embodiment, the jig is made of a flexible material, and the uniformity of the thickness of the jig is less than or equal to 2 microns. In one embodiment, the jig is made of other materials that do not affect the performance of the product.
In one embodiment, the jig is made of a silicone material.
And S112, flattening the wafer to be thinned.
Pressing down a tabletting device of the waxing device to flatten the wafer to be thinned; and lifting the tabletting device of the waxing device, and taking out the jig placed on the wafer to be thinned.
The film pressing device presses downwards to treat flattening of the thinning wafer, when the edge position and the center position of the thinning wafer are pressed to the same height, the warping position can be concentrated on the arc-shaped position of the product, the ring jig which is positioned on the thinning wafer can further flatten the thinning wafer to be treated on the ceramic disc along with the pressing of the film pressing device, and warping of the thinning wafer is reduced.
In one embodiment, the thickness difference between the wafers to be thinned on the ceramic disc is less than 20 microns, so that the problem that some wafers to be thinned cannot be pressed down by the tabletting device due to the thickness difference between different wafers to be thinned on the same ceramic disc is avoided, the flatness of the wafers by the tabletting device is influenced, and the uniformity of subsequent thinning is further influenced.
As shown in fig. 2, according to the distance between the wafer to be thinned after leveling and the ceramic disk, the wafer to be thinned is sequentially divided into an upper part (a square part in the figure), a middle part (a diagonal part in the figure) and a lower part (a grid part in the figure) from the edge position to the center position, and the distances between the parts and the ceramic disk are respectively tested, as shown in table one, the distance values between the upper part, the middle part and the lower part and the ceramic disk when no jig is added and a jig is added are shown, and as can be known from table one, the average value of the difference between the maximum distance and the minimum distance between the upper part, the middle part and the lower part and the ceramic disk after the jig is added is reduced from 0.029mm to 0.0105mm, and the thinned wafer with better uniformity can be obtained after the wafer to be thinned on the ceramic disk is integrally thinned.
Watch 1
As shown in fig. 3, in one embodiment, before the raising of the sheeting device of the waxing device, the method further comprises:
s202, cooling the ceramic disc.
And S204, detecting the temperature of the ceramic disc in real time until the temperature is less than or equal to 30 ℃, and then lifting the tabletting device of the waxing device.
After the temperature of the ceramic disc is less than or equal to 30 ℃, namely after the wax between the wafer to be thinned and the ceramic disc is solidified, the tabletting device of the waxing device is lifted, and the distance position between the wafer to be thinned and the ceramic disc and the like can not be changed.
And S114, carrying out a thinning process on the wafer to be thinned on the ceramic disc.
And after the jig placed on the wafer to be thinned is taken out, taking out the ceramic disc placed with the wafer to be thinned and placing the ceramic disc on thinning equipment to carry out a normal thinning process.
In one embodiment, step S114 includes:
and carrying out thinning process on the product on the ceramic disc by using a thinning grinding wheel.
In one embodiment, the thinning process includes two steps of rough polishing and fine polishing.
In one embodiment, the wafer to be thinned on the ceramic disc is subjected to a thinning process for thinning to form a vertical wafer of the light emitting diode.
In one embodiment, step S114 includes: thinning the substrate sheet until the surface of the substrate sheet is transparent, and after step S114, the method further includes: the substrate sheet is peeled from the semiconductor substrate wafer using a laser lift-off process, and the electroluminescent structure is transferred onto the semiconductor substrate wafer.
In one embodiment, the method further comprises performing a thinning process of the wafer side of the semiconductor substrate.
The wafer thinning method comprises the following steps: one surface of a semiconductor substrate wafer and a light-emitting structure surface of a substrate wafer with an electroluminescent structure are attached together and subjected to heat treatment, so that the semiconductor substrate wafer and the substrate wafer are bonded together to serve as a wafer to be thinned; placing a ceramic disc on a bearing table of a waxing device, dropping wax on the position of a wafer on the ceramic disc, placing the wafer to be thinned above the wax, and contacting the semiconductor substrate wafer surface of the wafer to be thinned with the wax; placing a jig on the wafer to be thinned, wherein the jig and the wafer to be thinned are placed concentrically, the jig is a circular ring jig, and the outer diameter of the jig is smaller than the diameter of the wafer to be thinned; and pressing the tabletting device of the waxing device downwards to smooth the wafer to be thinned, lifting the tabletting device of the waxing device, taking out the jig placed on the wafer to be thinned, and thinning the wafer to be thinned on the ceramic disc. Through placing the external diameter through concentric on the disk that needs the attenuate and being less than treat the ring tool of the diameter of attenuate disk, the film clamp that will wax the device pushes down and treats the level and smooth of attenuate disk, can obtain the better attenuate disk of homogeneity after carrying out the sapphire matte attenuate to the disk after the bonding, has realized the even attenuate to the bonding disk, has improved the yields of disk, has reduced manufacturing cost.
The utility model provides a jig, the tool is used for treating the attenuate technology of attenuate disk, the tool uses with the waxing attachment cooperation, the tool is the ring tool, the tool with treat that the attenuate disk is placed with one heart, just the external diameter of tool is less than treat the diameter of attenuate disk, the film clamp of waxing attachment pushes down treat that the tool on the attenuate disk goes on treat the level and smooth of attenuate disk.
In one embodiment, the ratio of the inner diameter of the jig to the diameter of the wafer to be thinned is equal to 0.5, the ratio of the outer diameter of the jig to the diameter of the wafer to be thinned is equal to 0.75, and the thickness of the jig is less than or equal to 1 mm.
In one embodiment, the jig is made of a flexible material, and the uniformity of the thickness of the jig is less than or equal to 2 microns.
In one embodiment, the jig is made of a silicone material.
Above-mentioned tool for treat the attenuate technology of attenuate disk, the tool uses with the waxing attachment cooperation, the tool is the ring tool, the tool with treat that the attenuate disk is placed with one heart, just the external diameter of tool is less than treat the diameter of attenuate disk, the film clamp of waxing attachment pushes down treat that the tool on the attenuate disk goes on treat the level and smooth of attenuate disk. Through placing above-mentioned external diameter on the disk that needs the attenuate with one heart and being less than treat behind the ring tool of the diameter of attenuate disk, the film clamp of waxing attachment pushes down treat that the tool on the attenuate disk goes on treat the level and smooth of attenuate disk, can reach the purpose that obtains the better attenuate disk of homogeneity after carrying out the attenuate to the disk after the bonding, realized the even attenuate to the bonding disk, improved the yields of disk, reduced manufacturing cost.
The utility model provides a waxing attachment, includes plummer and film clamp, the plummer is used for placing treats the attenuate disk, film clamp can the plummer top reciprocates for it levels to push down treat the attenuate disk on the plummer, waxing attachment includes above-mentioned arbitrary tool, the tool is placed film clamp's below, the tool is used for film clamp pushes down and levels when treating the attenuate disk level the disk.
In one embodiment, the jig is mounted on a first surface of the sheeting device, the first surface being the surface of the sheeting device that contacts the wafer to be thinned. The jig moves above the wafer to be thinned along with the movement of the tabletting device, and assists the tabletting device to flatten the wafer to be thinned when the tabletting device presses down the wafer to be thinned on the flattening bearing table.
Above-mentioned waxing attachment, including plummer and film clamp, the plummer is used for placing treats the attenuate disk, film clamp is in the plummer top reciprocates for push down and level the attenuate disk of treating on the plummer, waxing attachment still includes above-mentioned arbitrary tool, the tool is placed film clamp's below, the tool is used for film clamp pushes down and levels when treating the attenuate disk level the disk. The outer diameter of the ring jig is smaller than the diameter of the wafer to be thinned by placing the ring jig below the pressing device of the waxing device, the pressing device presses downwards to be flattened when the wafer to be thinned is to be thinned, the jig assists in flattening the wafer to be thinned, so that when the wafer to be thinned after waxing is thinned, the purpose of obtaining the thinned wafer with better uniformity after thinning can be achieved, the uniform thinning of the bonded wafer is realized, the yield of the wafer is improved, and the production cost is reduced.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method of wafer thinning, the method comprising:
one surface of a semiconductor substrate wafer and a light-emitting structure surface of a substrate wafer with an electroluminescent structure are attached together and subjected to heat treatment, so that the semiconductor substrate wafer and the substrate wafer are bonded together to serve as a wafer to be thinned;
placing a ceramic disc on a bearing table of a waxing device;
dropping wax onto the disc locations on the ceramic disc;
placing the wafer to be thinned above the wax, wherein the semiconductor substrate wafer surface of the wafer to be thinned is in contact with the wax;
placing a jig on the wafer to be thinned, wherein the jig and the wafer to be thinned are placed concentrically, the jig is a circular ring jig, and the outer diameter of the jig is smaller than the diameter of the wafer to be thinned;
pressing down a tabletting device of the waxing device to flatten the wafer to be thinned;
lifting the tabletting device of the waxing device, and taking out the jig placed on the wafer to be thinned;
and carrying out a thinning process on the wafer to be thinned on the ceramic disc.
2. The method of claim 1, wherein prior to raising the sheeting apparatus of the waxing apparatus, further comprising:
performing cooling of the ceramic disc;
and detecting the temperature of the ceramic disc in real time until the temperature is less than or equal to 30 ℃, and then lifting a tabletting device of the waxing device.
3. The method as claimed in claim 1, wherein the process of thinning the wafer to be thinned on the ceramic disc is for thinning and forming a vertical wafer of the light emitting diode, and the process of thinning the wafer on the ceramic disc comprises:
and carrying out thinning process on the product on the ceramic disc by using a thinning grinding wheel.
4. The method according to claim 1, characterized in that the difference in thickness between the discs to be thinned on the ceramic discs is less than 20 microns.
5. The method of claim 1, wherein the semiconductor substrate wafer is a silicon wafer and the substrate wafer is a sapphire wafer.
6. The method of claim 1, wherein the thinning process of the wafer to be thinned on the ceramic disk comprises thinning the substrate sheet until the surface of the substrate sheet is transparent;
the method comprises the following steps of: the substrate sheet is peeled from the semiconductor substrate wafer using a laser lift-off process, and the electroluminescent structure is transferred onto the semiconductor substrate wafer.
7. The utility model provides a jig, its characterized in that, the tool is used for treating the attenuate technology of attenuate disk, the tool uses with the waxing device cooperation, the tool is the ring tool, the tool with treat that the attenuate disk is placed with one heart, just the external diameter of tool is less than treat the diameter of attenuate disk, the film clamp of waxing device pushes down treat that the tool on the attenuate disk goes on treat the level and smooth of attenuate disk.
8. The jig according to claim 7, wherein the ratio of the inner diameter of the jig to the diameter of the wafer to be thinned is equal to 0.5, the ratio of the outer diameter of the jig to the diameter of the wafer to be thinned is equal to 0.75, the thickness of the jig is equal to or less than 1 mm, and the uniformity of the thickness of the jig is equal to or less than 2 microns.
9. A waxing device, comprising a bearing platform and a tabletting device, wherein the bearing platform is used for placing a wafer to be thinned, and the tabletting device can move up and down above the bearing platform and is used for flattening the wafer to be thinned on the bearing platform, and is characterized in that the waxing device comprises the jig of any one of claims 7-8, the jig is placed below the tabletting device, and the jig is used for flattening the wafer when the tabletting device flattens the wafer to be thinned.
10. The waxing device according to claim 9, wherein said jig is mounted on a first surface of said sheeting device, said first surface being the surface of said sheeting device that contacts said wafer to be thinned.
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| CN115985821A (en) * | 2023-02-22 | 2023-04-18 | 度亘核芯光电技术(苏州)有限公司 | Method for thinning wafer bonding substrate |
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