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CN111199898A - Cleaning device and method - Google Patents

Cleaning device and method Download PDF

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Publication number
CN111199898A
CN111199898A CN201811376756.0A CN201811376756A CN111199898A CN 111199898 A CN111199898 A CN 111199898A CN 201811376756 A CN201811376756 A CN 201811376756A CN 111199898 A CN111199898 A CN 111199898A
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China
Prior art keywords
gas
cleaning
liquid
gap
fluid
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CN201811376756.0A
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CN111199898B (en
Inventor
黄富源
吴宗恩
王志成
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Grand Plastic Technology Corp
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Grand Plastic Technology Corp
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Priority to CN201811376756.0A priority Critical patent/CN111199898B/en
Publication of CN111199898A publication Critical patent/CN111199898A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present disclosure provides a cleaning device and a method for removing residues on a chip stack structure. The cleaning device comprises: the apparatus includes a susceptor for placing a chip stack structure, and a two-fluid nozzle movable relative to the susceptor to align with a space between two adjacent chips, wherein the two-fluid nozzle is for applying a gas-liquid mixture fluid containing a chemical liquid and a gas onto the chip stack structure. The residue in the gap is separated from the surface to which it is attached by the chemical liquid of the gas-liquid mixed fluid, and the residue is carried out of the gap by the impact force exerted by the gas of the gas-liquid mixed fluid.

Description

Cleaning device and method
Technical Field
The present disclosure relates to a cleaning apparatus and method, and more particularly, to a cleaning apparatus and method for removing residues on a chip stack structure.
Background
A typical three-dimensional integrated circuit packaging process includes: four major steps of Via Formation (Via Formation), Via filling (Via filling), Wafer Thinning (Wafer Thinning), and Wafer Bonding (Wafer Bonding) are performed, and a Wafer cleaning step is required before and after each step to prevent contamination of the Wafer during the processing. Further, the Wafer bonding process can be roughly divided into three types, i.e., Chip to Wafer (C2W), Chip to Chip (C2C), and Wafer to Wafer (W2W). However, the gap formed by bonding the wafer to the wafer or the wafer to the chip is usually 20 to 50 μm, so how to remove the residue in such a tiny gap is a technical bottleneck that is needed to overcome the challenge.
Taiwan patent publication No. TW I539515 discloses a cleaning method and a cleaning apparatus for a chip stacked structure, which can clean flux or other impurities in minute gaps where a wafer and a chip are bonded. However, in the patent, a roller-type or brush-type sliding structure is provided at the bottom end of the liquid pumping device, so that the liquid pumping device slides on the substrate by the sliding structure to move to a position to be cleaned. That is, the pumping device may apply a downward pressure to the chip stacking structure, which may easily cause damage or breakage of the chip.
In view of the above, a cleaning apparatus and a cleaning method are needed to solve the problems in the prior art.
Disclosure of Invention
In order to solve the above-mentioned problems of the prior art, an object of the present disclosure is to provide a cleaning apparatus and a method, wherein the cleaning apparatus cleans the chip stacking structure in a non-contact manner, thereby avoiding the problem of chip damage caused by applying a downward pressure to the chip stacking structure.
To achieve the above object, the present disclosure provides a cleaning device for removing residues on a chip stack structure, the chip stack structure including a substrate and a plurality of chips, the chips being separated from the substrate by a gap, and the residues being located in the gap between the chips and the substrate, wherein the cleaning device includes: the bearing table is used for placing the chip stacking structure; a liquid supply device for providing a chemical liquid; the gas supply device is used for supplying gas; and a two-fluid nozzle movable relative to the susceptor into alignment with a space between two adjacent chips, wherein the two-fluid nozzle is connected to the liquid supply device and the gas supply device, and is configured to apply a gas-liquid mixed fluid containing the chemical liquid and the gas onto the substrate of the chip stack structure such that the gas-liquid mixed fluid flows into the gap along a first side of the gap, wherein the chemical liquid passing through the gas-liquid mixed fluid separates the residue in the gap from a surface to which the residue is attached, and the residue is carried out through a second side of the gap by an impact force applied by the gas of the gas-liquid mixed fluid.
In one preferred embodiment of the present disclosure, the cleaning device further includes: and the precision driving device is used for controlling the two-fluid nozzle to move along a vertical direction and move along a horizontal direction relative to the bearing table.
In one preferred embodiment of the present disclosure, the precision driving apparatus includes a vertical lifting mechanism for controlling the two-fluid nozzle to move along the vertical direction relative to the susceptor, and the vertical lifting mechanism includes a stepping motor.
In one preferred embodiment of the present disclosure, the precision driving apparatus includes a horizontal moving mechanism for controlling the two fluid nozzles to move along the horizontal direction relative to the susceptor, and the horizontal moving mechanism includes an X-Y axis coordinate Table (X-Y Table).
In one preferred embodiment of the present disclosure, the cleaning apparatus further includes a chamber, wherein the susceptor and the two-fluid nozzle are disposed in the chamber, and a pumping opening is disposed at a bottom of the chamber.
In one preferred embodiment of the present disclosure, the cleaning device further includes a gas-liquid separation device, wherein the gas-liquid separation device is connected to the pumping port of the cavity, and is configured to perform gas-liquid separation on the gas-liquid mixed fluid pumped through the pumping port.
In one preferred embodiment of the present disclosure, the gas supply device comprises a heater for heating the gas in the gas supply device to a temperature close to the temperature of the chemical liquid.
In one preferred embodiment of the present disclosure, the gas supply device comprises a humidifier for increasing the humidity of the gas in the gas supply device.
In one preferred embodiment of the present disclosure, the carrier stage includes another heater for heating the chip stack structure on the carrier stage to maintain a process temperature.
In one preferred embodiment of the present disclosure, the cleaning apparatus comprises a plurality of two-fluid nozzles aligned in a row, and the plurality of two-fluid nozzles are movable relative to the carrier stage into alignment with the spaces between two adjacent rows of dies.
In one preferred embodiment of the present disclosure, the front ends of the two fluid nozzles of the cleaning device are disposed to be inclined at an angle with respect to the surface of the cleaning chip stack structure.
In one preferred embodiment of the present disclosure, the two fluid nozzles comprise high pressure cleaning nozzles.
The present disclosure also provides a cleaning method performed by a cleaning apparatus comprising a carrier table, a liquid supply device, a gas supply device, a two-fluid nozzle, and a precision driving device, and the cleaning method is used for removing residues on a chip stack structure, the chip stack structure comprises a substrate and a plurality of chips, the chips are separated from the substrate by a gap, and the residues are located in the gap between the chips and the substrate, wherein the cleaning method comprises: placing the chip stacking structure on the bearing table; controlling the precision driving device to move the two-fluid nozzle to be aligned with the interval between two adjacent chips; the liquid supply device provides a chemical liquid to the two-fluid nozzle, and the gas supply device provides a gas to the two-fluid nozzle; applying a gas-liquid mixed fluid containing the chemical liquid and the gas onto the substrate of the chip stack structure such that the gas-liquid mixed fluid flows into the gap along a first side of the gap, wherein the residue in the gap is separated from a surface to which it is attached by the chemical liquid of the gas-liquid mixed fluid, and the residue is carried out through a second side of the gap by an impact force exerted by the gas of the gas-liquid mixed fluid.
In one preferred embodiment of the present disclosure, after the chip stacking structure is placed on the carrier stage, the method further includes: controlling the two fluid nozzles to move horizontally above the bearing table through a horizontal moving mechanism of the precise driving device, and controlling the two fluid nozzles to move along a vertical direction relative to the bearing table through a vertical lifting mechanism of the precise driving device so as to align the two fluid nozzles to the first side of the gap.
In one preferred embodiment of the present disclosure, the horizontal movement mechanism comprises an X-Y axis coordinate table (X-YTable).
In one preferred embodiment of the present disclosure, the cleaning apparatus further includes a chamber and a gas-liquid separation device, a pumping hole is formed at a bottom of the chamber, the gas-liquid separation device is connected to the pumping hole of the chamber, and the cleaning method further includes: and carrying out gas-liquid separation on the gas-liquid mixed fluid pumped out through the pumping hole by the gas-liquid separation device.
In one preferred embodiment of the present disclosure, the gas supply device of the cleaning device further comprises a heater, and before the gas supply device supplies a gas to the two-fluid nozzle, the cleaning method further comprises: and heating the gas in the gas supply device to be close to the temperature of the chemical liquid through the heater.
In one preferred embodiment of the present disclosure, the gas supply device of the cleaning device further comprises a humidifier, and before the gas supply device supplies a gas to the two-fluid nozzle, the cleaning method further comprises: increasing the humidity of the gas in the gas supply device by the humidifier.
In one preferred embodiment of the present disclosure, the susceptor of the cleaning apparatus further includes a heater, and the cleaning method further includes: the chip stack structure on the carrier stage is heated by the heater to be maintained at a process temperature.
In one preferred embodiment of the present disclosure, after the residue in the gap is removed by the gas-liquid mixed fluid, the cleaning method further includes: the liquid supply device provides a cleaning liquid to the two-fluid nozzle; and the two fluid nozzles spray the cleaning liquid to the chip stacking structure so as to remove the gas-liquid mixed fluid on the chip stacking structure.
In one preferred embodiment of the present disclosure, after the residue in the gap is removed by the gas-liquid mixed fluid, the cleaning method further includes: and spraying a cleaning liquid to the back surface of the substrate to remove the gas-liquid mixed fluid on the back surface of the substrate.
In one preferred embodiment of the present disclosure, after the residue in the gap is removed by the gas-liquid mixed fluid, the cleaning method further includes: and spraying a volatile solvent and a drying gas to the chip stacking structure to remove moisture on the surface of the chip stacking structure.
In one preferred embodiment of the present disclosure, after the residue in the gap is removed by the gas-liquid mixed fluid, the cleaning method further includes: and placing the chip stacking structure in an oven to remove moisture on the surface of the chip stacking structure.
Compared with the prior art, the gas-liquid mixed fluid is applied to the chip stacking structure by adopting the two-fluid nozzle in the cleaning device, and the residues in the gap of the chip stacking structure are cleaned by the gas-liquid mixed fluid. During cleaning, the chemical liquid of the gas-liquid mixed fluid separates the residue in the gap from the surface to which it adheres, and the impact force exerted by the gas of the gas-liquid mixed fluid carries the residue out through the second side of the gap. By means of the design, the chip stacking structure can be cleaned in a non-contact mode, and the problem that the chip is damaged due to the fact that downward pressure is applied to the chip stacking structure is solved.
Drawings
FIG. 1 shows a schematic view of a cleaning apparatus according to a first preferred embodiment of the present disclosure;
FIG. 2 is a schematic view showing a partial structure of the cleaning apparatus shown in FIG. 1;
FIG. 3 shows a schematic view of the moving mechanism of the cleaning apparatus;
FIG. 4 is a schematic diagram of a drying apparatus used in the cleaning method of the present disclosure;
FIG. 5 shows a partial schematic view of a cleaning apparatus according to a second preferred embodiment of the present disclosure; and
FIG. 6 is a partial schematic view of a cleaning apparatus according to a third preferred embodiment of the present disclosure.
Detailed Description
In order to make the aforementioned and other objects, features and advantages of the present disclosure comprehensible, preferred embodiments accompanied with figures are described in detail below.
The physical size of a microprocessor chip, which includes logic and caches, limits the number of caches (due to process defects in large area chips) if the logic and caches are both arranged in a Two-Dimensional (2-D) pattern, thereby limiting the performance of the microprocessor. To solve the problem of 2-D resources on a chip, the construction of Three-Dimensional (3-D) integrated circuits is actively being developed. In general, a typical 3D-IC process includes: four major steps of Via Formation (Via Formation), Via Filling (Via Filling), Wafer thinning (Wafer thinning), and Wafer Bonding (Wafer Bonding) are performed, and a Wafer cleaning step is required before and after each step to prevent contamination of the Wafer during the processing. Further, the Wafer bonding process can be roughly divided into three types, i.e., Chip to Wafer (C2W), Chip to Chip (C2C), and Wafer to Wafer (W2W). However, the gap formed by bonding the wafer to the wafer or the wafer to the chip is usually 20 to 50 μm. The cleaning device and the cleaning method can remove residues in the tiny gaps.
Referring to fig. 1, a schematic diagram of a cleaning apparatus 1 according to a first preferred embodiment of the disclosure is shown. The cleaning device 1 is used for removing residues R on the chip stacking structure 2, wherein the residues R may be residues left from previous processes, such as flux, resin, glue, particles, organic matters, inorganic matters, etc. The chip stack structure 2 is a three-dimensional integrated circuit board including a substrate S and a plurality of chips C arranged in an array. A plurality of connecting pieces B are arranged between the chip C and the substrate S. The connecting member B may be a solder ball or any other suitable element for soldering the substrate S and the chip C. The connecting member B is used for connecting the substrate S and the chip C and separating the substrate S and the chip C by a gap G, wherein the substance to be removed by the cleaning apparatus 1 is a residue R in the gap G between the substrate S and the chip C.
As shown in fig. 1, the cleaning apparatus 1 mainly includes a chamber 100, a susceptor 110, a liquid supply device 120, a gas supply device 130, a two-fluid nozzle 140, and a gas-liquid separation device 160, wherein the susceptor 110 and the two-fluid nozzle 140 are disposed in the chamber 100. The bottom of the chamber 100 is provided with a pumping hole 101, and the gas-liquid separating device 160 is connected to the pumping hole 101 of the chamber 100. The carrier stage 110 is used for placing the chip stack structure 2. The carrier table 110 includes a heater 111 for heating the chip stack structure 2 on the carrier table 110 to maintain a proper process temperature.
Referring to fig. 1 and fig. 2, fig. 2 is a schematic view illustrating a partial structure of the cleaning apparatus 1 of fig. 1. The liquid supply device 120 includes a liquid supply end 121 and a pipeline 122, wherein the liquid supply end 121 is filled with a chemical liquid 123. The gas supply 130 includes a gas supply end 131 and a pipe 132, wherein the gas supply end 131 contains a gas 133. Alternatively, the gas 133 may be nitrogen, Clean Dry Air (CDA), or the like. The two-fluid nozzle 140 is connected to the liquid supply device 120 and the gas supply device 130, and is configured to mix the chemical liquid 123 supplied from the liquid supply device 120 and the gas 133 supplied from the gas supply device 130 to form a gas-liquid mixed fluid 150, and to eject the gas-liquid mixed fluid 150 onto the substrate S of the chip stacking structure 2.
As shown in fig. 2, the gas supply device 130 further includes a heater 134 and a humidifier 135. In order to remove the residue R on the chip stack 2, the chemical liquid 123 with a certain temperature is used to accelerate the reaction between the chemical liquid 123 and the residue R, so that the residue R is separated from the surface to which it is attached. However, when the gas 133 is mixed with the chemical liquid 123, the gas 133 may lower the temperature of the chemical liquid 123. Therefore, the present disclosure can avoid the temperature drop of the chemical liquid 123 due to the low temperature gas 133 by providing the heater 134 to heat the gas 133 in the gas supply device 130 to be close to the temperature of the chemical liquid 123. Also, the present disclosure increases the humidity of the gas 133 in the gas supply device 130 by providing the humidifier 135 to prevent the temperature of the chemical liquid 123 from being changed by the humidity of the gas 133.
Referring to fig. 3, a schematic diagram of a moving mechanism of the cleaning apparatus 1 is shown. The moving mechanism of the cleaning apparatus 1 may be implemented by a precision driving apparatus 170. The precision driving apparatus 170 has a vertical lift mechanism and a horizontal movement mechanism. The vertical lifting mechanism and the horizontal moving mechanism of the precision driving device 170 are electrically connected to a main control device (e.g., a computer), and the movement of the moving mechanism of the cleaning device 1 can be set by a control process sequence in the main control device.
As shown in fig. 3, a precision drive 170 is coupled to the two-fluid nozzle 140. The vertical lift mechanism has a connection member and a precision driving element (e.g., a stepping motor) connected to the two-fluid nozzle 140 for controlling the two-fluid nozzle 140 to move in a vertical direction (i.e., in a direction away from or close to the susceptor 110) relative to the susceptor 110. The up-and-down movement position of the two fluid nozzles 140 can be precisely controlled by the arrangement of the precise driving element. Preferably, the precision driving device 170 is used with a coordinate measuring mechanism to record the moving position and speed of the two fluid nozzles 140 in the vertical direction. The horizontal movement mechanism is used to control the horizontal movement of the two-fluid nozzle 140. For example, the horizontal movement mechanism may employ an X-Y axis Table (X-Y Table) to precisely control the horizontal movement of the two fluid nozzles 140 for precise alignment to the cleaning position. In addition, the X-Y axis coordinate table can be matched with a point position recording device for recording the moving positions of the two fluid nozzles 140, so that the positioning points of the two fluid nozzles 140 required by the chip stacking structure 2 with the same pattern can be quickly found during the production. It should be noted that, in order to match the above-mentioned precise positioning, the carrier table 110 preferably holds the chip stacking structure 2 thereon by vacuum absorption, so as to ensure that the chip stacking structure 2 does not move relative to the carrier table 110 during the cleaning process.
The present disclosure provides a cleaning apparatus and a method, wherein the cleaning apparatus 1 cleans the chip stacking structure 2 in a non-contact manner, thereby avoiding the problem of damage to the chip C caused by applying a downward pressure to the chip stacking structure 2. Some steps of the cleaning method of the present disclosure are performed by the cleaning apparatus 1, wherein specific steps of the cleaning method are described in detail below with reference to the cleaning apparatus 1.
The cleaning method of the present disclosure includes the following steps, referring to fig. 1, placing a chip stack structure 2 on a carrier stage 110. The heater 111 on the carrier table 110 is turned on to heat the chip stack structure 2 on the carrier table 110 to maintain the chip stack structure 2 at a proper process temperature. By maintaining the temperature, the chemical liquid 123 applied subsequently can be maintained at a proper process temperature without being cooled down, and thus the reaction between the chemical liquid 123 and the residue R is accelerated to separate the residue R from the surface to which it is attached.
As shown in fig. 1 and 3, after the chip stacking structure 2 is placed, the two fluid nozzles 140 are controlled by the precision driving device 170 to move over the carrier table 110 so as to move the two fluid nozzles 140 to be aligned with the space D between two adjacent chips C and to be aligned with the first side P1 of the gap G.
As shown in fig. 1 and 2, the humidity of the gas 133 in the gas supply device 130 is increased by the humidifier 135, and the gas 133 in the gas supply device 130 is heated to a temperature close to that of the chemical liquid 123 by the heater 134. Next, the gas supply device 130 and the liquid supply device 120 respectively deliver the gas 133 and the chemical liquid 123 to the two-fluid nozzle 140. The gas 133 and the chemical liquid 123 are mixed inside the two-fluid nozzle 140 to form the gas-liquid mixed fluid 150.
Next, as shown in fig. 1, the gas-liquid mixed fluid 150 is applied onto the substrate S of the chip stack structure 2 through the two-fluid nozzle 140, so that the gas-liquid mixed fluid 150 flows into the gap G along the first side P1 of the gap G. The chemical liquid 123 passing through the gas-liquid mixed fluid 150 undergoes a chemical cleaning reaction with the residue R in the gap G, causing the residue R to separate from the surface to which it is attached, and the impact force exerted by the gas 133 passing through the gas-liquid mixed fluid 150 brings the residue R out through the second side P2 of the gap G. It should be noted that the two-fluid nozzle 140 sprays the gas-liquid mixture 150 while the precision driving device 170 controls the two-fluid nozzle 140 to move in the horizontal direction. Preferably, the two fluid nozzles 140 are moved in parallel along the interval D between two adjacent chips C. However, in another embodiment, in order to simplify the control process, the precision driving device 170 may be set to move the two fluid nozzles 140 from the interval D between two adjacent chips C to the interval D between the other two adjacent chips C while moving along the X direction, and rotate the susceptor 110 by 90 degrees after the two fluid nozzles 140 spray the entire surface chip stacking structure 2 along the X direction. When the precision driving device 170 sets the two fluid nozzles 140 to move along the Y direction, the two fluid nozzles 140 will correspond to the gap D between two adjacent chips C and move in parallel along the direction in which the gap D extends, and the spraying operation of the gas-liquid mixture 150 will be performed simultaneously and the above-mentioned overall spraying operation will be performed again, so as to ensure that the gaps G of the chip stacking structure 2 will be cleaned.
In the present disclosure, the liquid supply device 120 may provide a cleaning liquid, such as pure water, deionized water, etc., in addition to the chemical liquid 123. After the gas-liquid mixture fluid 150 removes the residue R in the gap G, the liquid supply device 120 may be switched to supply a cleaning liquid to the two-fluid nozzle 140, so that the two-fluid nozzle 140 sprays the cleaning liquid to the chip stacking structure 2 to remove the gas-liquid mixture fluid 150 on the chip stacking structure 2.
On the other hand, as shown in fig. 1, while the two fluid nozzle 140 sprays the gas-liquid mixed fluid 150 or the cleaning liquid to the chip stack structure 2, the liquid and the gas drawn through the drawing port 101 of the chamber 100 may be gas-liquid separated by the gas-liquid separating device 160. Preferably, the gas-liquid separating device 160 is provided with a filter which can filter the extracted solid residue R, then separate the liquid and the gas, finally introduce the liquid into the liquid recovery tank 161, and discharge the gas. Therefore, the liquid recovered by the gas-liquid separation can be reused by appropriate treatment. In addition, a flow meter can be added to the liquid recovery tank 161 to record the pumping flow rate.
After removing the residue R in the gap G of the chip stacking structure 2, the chip stacking structure 2 is moved to a drying device for performing a final cleaning and drying step on the chip stacking structure 2. Fig. 4 is a schematic diagram of a drying device 3 correspondingly used in the cleaning method of the present disclosure. The drying device 3 includes a spin chuck 310, a first nozzle 320, and a two-fluid nozzle 330. The first nozzle 320 is connected to a liquid supply and the two-fluid nozzle 330 is connected to a volatile solvent supply and a gas supply. After the chip stacking structure 2 is moved into the drying apparatus, the first nozzle 320 sprays a cleaning liquid to the back surface of the substrate S of the chip stacking structure 2 to remove the gas-liquid mixed fluid 150 remaining on the back surface of the substrate S, wherein the cleaning liquid may be pure water, deionized water, or the like.
Next, after both sides of the chip stacking structure 2 are cleaned, a volatile solvent and a drying gas are simultaneously supplied to the chip stacking structure 2 through the two-fluid nozzle 330 to remove moisture on the surface of the chip stacking structure 2, wherein the volatile solvent may be Isopropyl Alcohol (IPA), and the drying gas may be nitrogen. Alternatively, after both sides of the chip stacking structure 2 are cleaned, the chip stacking structure 2 may be placed in an oven to remove moisture on the surface of the chip stacking structure 2, but is not limited thereto.
Referring to fig. 5, a partial schematic view of a cleaning apparatus according to a second preferred embodiment of the disclosure is shown. The cleaning apparatus of the second preferred embodiment is substantially the same as the cleaning apparatus 1 of the first preferred embodiment except that the cleaning apparatus of the second preferred embodiment employs a plurality of two-fluid nozzles 240, so that a plurality of gaps G between the chips C of the chip stack structure 2 and the substrate S can be cleaned at one time. Specifically, the plurality of two-fluid nozzles 440 are aligned in a row-by-row fashion, and the plurality of two-fluid nozzles 440 may be moved into alignment with the plurality of gaps G between two adjacent rows of chips C. By this design, the cleaning time of the chip stack structure 2 can be effectively shortened to improve the cleaning efficiency.
Referring to fig. 6, a partial schematic view of a cleaning apparatus according to a third preferred embodiment of the disclosure is shown. The cleaning apparatus of the third preferred embodiment is substantially the same as the cleaning apparatus 1 of the first preferred embodiment except that the front end of the two-fluid nozzle 540 is disposed to be inclined at an angle θ with respect to the surface of the cleaning chip stack structure 2. Preferably, the angle θ is 30 to 60 degrees. And, the precise driving device is matched to control the two-fluid nozzle to move towards a single direction and carry out spraying operation, so that the residues R can move towards the same direction. For example, when the two fluid nozzles 540 are tilted in a right-to-left direction and the fine driving device controls the two fluid nozzles to move from the right-to-left direction and perform the spraying operation, the residue R is moved in the left direction. By this design, the residue R is prevented from being flushed back into the cleaned gap G.
In summary, the present disclosure applies a gas-liquid mixed fluid to a chip stack structure by using a two-fluid nozzle in a cleaning apparatus, and cleans residues in a gap of the chip stack structure by the gas-liquid mixed fluid. During cleaning, the chemical liquid of the gas-liquid mixed fluid separates the residue in the gap from the surface to which it adheres, and the impact force exerted by the gas of the gas-liquid mixed fluid carries the residue out through the second side of the gap. The present disclosure applies a gas-liquid mixed fluid to a chip stack structure using a two-fluid nozzle, and also applies a High Pressure Cleaning (HPC) fluid to the chip stack structure using a High Pressure liquid nozzle, and cleans residues in a gap of the chip stack structure by the High Pressure liquid. During cleaning, the high pressure liquid separates the residue in the gap from the surface to which it is attached, and the impact force exerted by the high pressure liquid carries the residue out through the second side of the gap. By means of the design, the chip stacking structure can be cleaned in a non-contact mode, and the problem that the cleaning spray head directly applies downward pressure to the chip stacking structure to cause chip damage is solved.
The foregoing is merely a preferred embodiment of the present disclosure, and it should be noted that modifications and refinements may be made by those skilled in the art without departing from the principle of the present disclosure, and these modifications and refinements should also be regarded as the protection scope of the present disclosure.

Claims (23)

1.一种清洗装置,用于去除一芯片堆叠结构上的残留物,其特征在于,所述芯片堆叠结构包含一基板和多个芯片,所述芯片与所述基板相隔一间隙,以及所述残留物位在所述芯片与所述基板之间的所述间隙中,其中所述清洗装置包含:1. A cleaning device for removing residues on a chip stacking structure, wherein the chip stacking structure comprises a substrate and a plurality of chips, the chips and the substrate are separated by a gap, and the Residues are located in the gap between the chip and the substrate, wherein the cleaning device includes: 一承载台,用于放置所述芯片堆叠结构;a carrying table for placing the chip stack structure; 一供液装置,用于提供一化学液体;a liquid supply device for supplying a chemical liquid; 一供气装置,用于提供一气体;以及a gas supply device for supplying a gas; and 一二流体喷嘴,可相对于所述承载台移动至与两相邻的芯片之间的间隔对准,其中所述二流体喷嘴与所述供液装置和所述供气装置连接,用于施加包含所述化学液体和所述气体的气液混合流体至所述芯片堆叠结构的所述基板上,使得所述气液混合流体沿着所述间隙的第一侧流入所述间隙内,其中通过所述气液混合流体的所述化学液体使在所述间隙内的所述残留物从其附着的表面分离,以及通过所述气液混合流体的所述气体施加的冲击力将所述残留物通过所述间隙的第二侧带出。A two-fluid nozzle, movable relative to the carrier to align with the space between two adjacent chips, wherein the two-fluid nozzle is connected to the liquid supply device and the air supply device for applying A gas-liquid mixed fluid containing the chemical liquid and the gas is applied to the substrate of the chip stack structure, so that the gas-liquid mixed fluid flows into the gap along the first side of the gap, and passes through the gap. The chemical liquid of the gas-liquid mixed fluid separates the residue in the gap from the surface to which it is attached, and the residue is separated by the impact force exerted by the gas of the gas-liquid mixed fluid. Bring out through the second side of the gap. 2.如权利要求1的清洗装置,其特征在于,所述清洗装置还包含:一精密驱动装置,用于控制所述二流体喷嘴相对所述承载台沿着一垂直方向移动和沿着一水平方向移动。2 . The cleaning device according to claim 1 , wherein the cleaning device further comprises: a precision driving device for controlling the two-fluid nozzle to move relative to the carrying platform along a vertical direction and along a horizontal direction. 3 . direction move. 3.如权利要求2的清洗装置,其特征在于,所述精密驱动装置包含一垂直升降机构用于控制所述二流体喷嘴相对所述承载台沿着所述垂直方向移动,所述垂直升降机构包括步进马达。3. The cleaning device of claim 2, wherein the precision driving device comprises a vertical lift mechanism for controlling the two-fluid nozzle to move in the vertical direction relative to the carrier, the vertical lift mechanism Including stepper motor. 4.如权利要求2的清洗装置,其特征在于,所述精密驱动装置包含一水平移动机构用于控制所述二流体喷嘴相对所述承载台沿着所述水平方向移动,所述水平移动机构包括X-Y轴座标工作桌(X-Y Table)。4. The cleaning device according to claim 2, wherein the precision driving device comprises a horizontal moving mechanism for controlling the two-fluid nozzle to move along the horizontal direction relative to the carrying platform, the horizontal moving mechanism Including the X-Y axis coordinate work table (X-Y Table). 5.如权利要求1的清洗装置,其特征在于,所述清洗装置还包含一腔体,其中所述承载台与所述二流体喷嘴设置在所述腔体内,且所述腔体的底部设有一抽气口。5 . The cleaning device according to claim 1 , wherein the cleaning device further comprises a cavity, wherein the bearing platform and the two-fluid nozzle are arranged in the cavity, and the bottom of the cavity is provided with 5 . There is an air outlet. 6.如权利要求5的清洗装置,其特征在于,所述清洗装置还包含一气液分离装置,其中所述气液分离装置与所述腔体的所述抽气口连接,用于将通过所述抽气口抽出的所述气液混合流体进行气液分离。6. The cleaning device according to claim 5, characterized in that, the cleaning device further comprises a gas-liquid separation device, wherein the gas-liquid separation device is connected with the air suction port of the cavity for The gas-liquid mixed fluid extracted from the gas suction port is subjected to gas-liquid separation. 7.如权利要求1的清洗装置,其特征在于,所述供气装置包含一加热器,用于将所述供气装置内的所述气体加热至与所述化学液体的温度相近。7. The cleaning device of claim 1, wherein the gas supply device comprises a heater for heating the gas in the gas supply device to a temperature close to that of the chemical liquid. 8.如权利要求1的清洗装置,其特征在于,所述供气装置包含一加湿器,用于增加所述供气装置内的所述气体的湿度。8. The cleaning device of claim 1, wherein the air supply device comprises a humidifier for increasing the humidity of the gas in the air supply device. 9.如权利要求1的清洗装置,其特征在于,所述承载台包含另一加热器,用于将所述承载台上的所述芯片堆叠结构加热以保持在一工艺温度。9 . The cleaning apparatus of claim 1 , wherein the carrier table comprises another heater for heating the chip stack structure on the carrier table to maintain a process temperature. 10 . 10.如权利要求1的清洗装置,其特征在于,所述清洗装置包含多个二流体喷嘴,以一排并列的方式对齐排列,并且所述多个二流体喷嘴可相对于所述承载台移动至与两排相邻的芯片之间的间隔对准。10 . The cleaning device of claim 1 , wherein the cleaning device comprises a plurality of two-fluid nozzles, which are aligned in a side-by-side manner, and the plurality of two-fluid nozzles are movable relative to the carrying platform. 11 . To align with the space between adjacent chips in two rows. 11.如权利要求1的清洗装置,其特征在于,所述清洗装置的所述二流体喷嘴的前端设置为相对于所述清洗芯片堆叠结构的表面倾斜一角度。11 . The cleaning device of claim 1 , wherein the front end of the two-fluid nozzle of the cleaning device is set to be inclined at an angle relative to the surface of the cleaning chip stack structure. 12 . 12.如权利要求1的清洗装置,其特征在于,所述二流体喷嘴包含高压清洗喷嘴。12. The cleaning apparatus of claim 1, wherein the two-fluid nozzle comprises a high-pressure cleaning nozzle. 13.一种清洗方法,由一清洗装置来执行,所述清洗装置包含一承载台、一供液装置、一供气装置、一二流体喷嘴、和一精密驱动装置,以及所述清洗方法用于去除一芯片堆叠结构上的残留物,所述芯片堆叠结构包含一基板和多个芯片,所述芯片与所述基板相隔一间隙,以及所述残留物位在所述芯片与所述基板之间的所述间隙中,其特征在于,所述清洗方法包含:13. A cleaning method, performed by a cleaning device, the cleaning device comprising a carrier, a liquid supply device, an air supply device, a two-fluid nozzle, and a precision drive device, and the cleaning method uses For removing residues on a chip stack structure, the chip stack structure includes a substrate and a plurality of chips, the chips and the substrate are separated by a gap, and the residues are located between the chips and the substrate. In the gap between, it is characterized in that, described cleaning method comprises: 在所述承载台上放置所述芯片堆叠结构;placing the chip stack structure on the carrier; 控制所述精密驱动装置将所述二流体喷嘴移动至与两相邻的芯片之间的间隔对准;controlling the precision driving device to move the two-fluid nozzle to align with the interval between two adjacent chips; 所述供液装置提供一化学液体至所述二流体喷嘴,以及所述供气装置提供一气体至所述二流体喷嘴;the liquid supply device provides a chemical liquid to the two-fluid nozzle, and the gas supply device provides a gas to the two-fluid nozzle; 施加包含所述化学液体和所述气体的气液混合流体至所述芯片堆叠结构的所述基板上,使得所述气液混合流体沿着所述间隙的第一侧流入所述间隙内,其中通过所述气液混合流体的所述化学液体使在所述间隙内的所述残留物从其附着的表面分离,以及通过所述气液混合流体的所述气体施加的冲击力将所述残留物通过所述间隙的第二侧带出。applying a gas-liquid mixed fluid containing the chemical liquid and the gas onto the substrate of the chip stack structure, so that the gas-liquid mixed fluid flows into the gap along a first side of the gap, wherein The residue in the gap is separated from the surface to which it is attached by the chemical liquid of the gas-liquid mixed fluid, and the residue is separated by the impact force exerted by the gas of the gas-liquid mixed fluid The object is carried out through the second side of the gap. 14.如权利要求13的清洗方法,其特征在于,在所述承载台上放置所述芯片堆叠结构之后还包含:通过所述精密驱动装置的一水平移动机构控制所述二流体喷嘴在所述承载台上方水平移动,以及通过所述精密驱动装置的一垂直升降机构控制所述二流体喷嘴相对所述承载台沿着一垂直方向移动,以将所述二流体喷嘴对准所述间隙的所述第一侧。14 . The cleaning method according to claim 13 , wherein after placing the chip stack structure on the carrying table, the method further comprises: controlling the two-fluid nozzle in the The top of the carrying platform moves horizontally, and the two-fluid nozzle is controlled to move in a vertical direction relative to the carrying platform through a vertical lifting mechanism of the precision driving device, so as to align the two-fluid nozzle with all parts of the gap. the first side. 15.如权利要求14的清洗方法,其特征在于,所述水平移动机构包括X-Y轴座标工作桌(X-Y Table)。15. The cleaning method of claim 14, wherein the horizontal moving mechanism comprises an X-Y axis coordinate table (X-Y Table). 16.如权利要求13的清洗方法,其特征在于,所述清洗装置还包含一腔体和一气液分离装置,且所述腔体的底部设有一抽气口,所述气液分离装置与所述腔体的所述抽气口连接,以及所述清洗方法还包含:通过所述气液分离装置将通过所述抽气口抽出的所述气液混合流体进行气液分离。16. The cleaning method of claim 13, wherein the cleaning device further comprises a cavity and a gas-liquid separation device, and an air suction port is provided at the bottom of the cavity, and the gas-liquid separation device is connected to the gas-liquid separation device. The air suction port of the cavity is connected, and the cleaning method further includes: performing gas-liquid separation on the gas-liquid mixed fluid drawn out through the air suction port by the gas-liquid separation device. 17.如权利要求13的清洗方法,其特征在于,所述清洗装置的所述供气装置还包含一加热器,以及在所述供气装置提供一气体至所述二流体喷嘴之前,所述清洗方法还包含:通过所述加热器将所述供气装置内的所述气体加热至与所述化学液体的温度相近。17. The cleaning method of claim 13, wherein the air supply device of the cleaning device further comprises a heater, and before the air supply device provides a gas to the two-fluid nozzle, the The cleaning method further includes: heating the gas in the gas supply device to a temperature close to the chemical liquid by the heater. 18.如权利要求13的清洗方法,其特征在于,所述清洗装置的所述供气装置还包含一加湿器,以及在所述供气装置提供一气体至所述二流体喷嘴之前,所述清洗方法还包含:通过所述加湿器增加所述供气装置内的所述气体的湿度。18. The cleaning method of claim 13, wherein the air supply device of the cleaning device further comprises a humidifier, and before the air supply device provides a gas to the two-fluid nozzle, the The cleaning method further includes: increasing the humidity of the gas in the gas supply device through the humidifier. 19.如权利要求13的清洗方法,其特征在于,所述清洗装置的所述承载台还包含一加热器,以及所述清洗方法还包含:通过所述加热器将所述承载台上的所述芯片堆叠结构加热以保持在一工艺温度。19. The cleaning method according to claim 13, characterized in that, the carrying table of the cleaning device further comprises a heater, and the cleaning method further comprises: using the heater to remove all the parts on the carrying table by using the heater. The chip stack is heated to maintain a process temperature. 20.如权利要求13的清洗方法,其特征在于,在通过所述气液混合流体将在所述间隙内的所述残留物去除之后,所述清洗方法还包含:20. The cleaning method of claim 13, wherein after removing the residue in the gap by the gas-liquid mixed fluid, the cleaning method further comprises: 所述供液装置提供一清洗液体至所述二流体喷嘴;以及the liquid supply device provides a cleaning liquid to the two-fluid nozzle; and 所述二流体喷嘴对所述芯片堆叠结构喷洒所述清洗液体,以去除所述芯片堆叠结构上的所述气液混合流体。The two-fluid nozzle sprays the cleaning liquid on the chip stack structure to remove the gas-liquid mixed fluid on the chip stack structure. 21.如权利要求13的清洗方法,其特征在于,在通过所述气液混合流体将在所述间隙内的所述残留物去除之后,所述清洗方法还包含:对所述基板的背面喷洒清洗液体,以去除所述基板的所述背面上的所述气液混合流体。21. The cleaning method of claim 13, wherein after removing the residue in the gap by the gas-liquid mixed fluid, the cleaning method further comprises: spraying the backside of the substrate cleaning liquid to remove the gas-liquid mixed fluid on the backside of the substrate. 22.如权利要求13的清洗方法,其特征在于,在通过所述气液混合流体将在所述间隙内的所述残留物去除之后,所述清洗方法还包含:对所述芯片堆叠结构喷洒挥发性溶剂和干燥气体,以去除所述芯片堆叠结构的表面的水分。22. The cleaning method of claim 13, wherein after removing the residue in the gap by the gas-liquid mixed fluid, the cleaning method further comprises: spraying the chip stack structure Volatile solvent and drying gas to remove moisture from the surface of the chip stack structure. 23.如权利要求13的清洗方法,其特征在于,在通过所述气液混合流体将在所述间隙内的所述残留物去除之后,所述清洗方法还包含:将所述芯片堆叠结构放置在一烤箱内,以去除所述芯片堆叠结构的表面的水分。23. The cleaning method of claim 13, wherein after removing the residue in the gap by the gas-liquid mixed fluid, the cleaning method further comprises: placing the chip stack structure on in an oven to remove moisture from the surface of the chip stack.
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