CN111180499A

CN111180499A - Pixel structure, display panel and repairing method thereof

Info

Publication number: CN111180499A
Application number: CN202010097084.0A
Authority: CN
Inventors: 廖文骏; 张陶然; 莫再隆
Original assignee: BOE Technology Group Co Ltd; Chengdu BOE Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Chengdu BOE Optoelectronics Technology Co Ltd
Priority date: 2020-02-17
Filing date: 2020-02-17
Publication date: 2020-05-19

Abstract

The invention relates to a pixel structure, a display panel and a repairing method thereof. The pixel structure comprises a light-emitting device and a pixel circuit; the light emitting device comprises at least three anodes, an organic light emitting layer and a cathode; at least three anodes are connected to the same pixel circuit, the organic light emitting layer is located on the at least three anodes, and the cathode is located on the organic light emitting layer. According to the embodiment of the invention, the dark spots can be limited to a smaller area, and the influence of the dark spots or the bright spots on the display effect is reduced.

Description

Pixel structure, display panel and repairing method thereof

Technical Field

The invention relates to the technical field of display, in particular to a pixel structure, a display panel and a repairing method thereof.

Background

An Active Matrix Organic Light Emitting Diode (AMOLED) has the advantages of wide color gamut, high contrast, low power consumption, thinness, foldability, and the like due to its self-luminous property, and is considered to be the most promising display technology in the future. However, due to the complicated AMOLED process route and the high technical requirements, the conventional process capability inevitably causes many defects, which directly causes difficulty in increasing the yield and increases the production cost. Therefore, poor improvement is a problem to be solved in the mass production of AMOLEDs.

In the AMOLED manufacturing process, the dark and bright spots are the most common display panel defects, which have limited the AMOLED yield. For a display device with FHD (Full High Definition) and a relatively High requirement on resolution, or a display device with a very strict requirement on picture quality, a dark spot of a single sub-pixel cannot be accepted, which directly results in a defective product and has a great influence on yield. Similarly, for such display devices, the bright spots of the individual pixels cannot be repaired into dark spots by repair means to complete the yield conversion, and the product yield is snow frosting. Therefore, how to reduce the influence of the dark spots or the bright spots on the display effect is a technical problem to be solved.

Disclosure of Invention

The invention provides a pixel structure, a display panel and a repairing method thereof, which aim to solve the defects in the related art.

According to a first aspect of embodiments of the present invention, there is provided a pixel structure, including a light emitting device and a pixel circuit; the light emitting device comprises at least three anodes, an organic light emitting layer and a cathode; the at least three anodes are connected to the same pixel circuit, the organic light emitting layer is located on the at least three anodes, and the cathode is located on the organic light emitting layer.

In one embodiment, a gap exists between two adjacent anodes.

In one embodiment, the pixel structure further includes a planarization layer and a first conductive line, the pixel circuit includes a thin film transistor, the thin film transistor includes a source electrode and a drain electrode, the source electrode, the drain electrode and the first conductive line are on the same layer, and the planarization layer is located between the source electrode and the anode electrode; the planarization layer comprises at least three through holes, the at least three through holes are connected with the at least three anodes in a one-to-one correspondence mode, and the at least three through holes are connected to the source electrode or the drain electrode through the first conducting wire.

In one embodiment, the pixel structure further includes at least three first connection portions and at least two second connection portions, the at least three first connection portions are on the same layer as the anode, and the at least two second connection portions are on the same layer as the first conductive line; the at least three first connecting parts are connected with the at least three anodes in a one-to-one corresponding manner, and the at least three first connecting parts are connected with the at least three via holes in a one-to-one corresponding manner; when the at least three via holes are connected to the drain electrode through the first wire, the at least two second connecting portions, the drain electrode and the at least three via holes are connected in a one-to-one correspondence manner, and the at least two second connecting portions are connected to the drain electrode through the first wire. When the at least three via holes are connected to the source electrode through the first wire, the at least two second connecting portions, the source electrode and the at least three via holes are connected in a one-to-one correspondence manner, and the at least two second connecting portions are connected to the source electrode through the first wire.

In one embodiment, when the at least three via holes are connected to the drain electrode through the first conductive line, the distances between the drain electrode and the at least three anodes are not the same, or at least two of the distances between the drain electrode and the at least three anodes are the same.

In one embodiment, when the at least three via holes are connected to the source electrode through the first conductive line, the distances between the source electrode and the at least three anodes are not the same, or at least two of the distances between the source electrode and the at least three anodes are the same.

In one embodiment, the pixel structure further includes a planarization layer and a second conductive line, the pixel circuit includes a thin film transistor, the thin film transistor includes a source electrode and a drain electrode, the source electrode and the drain electrode are on the same layer, and the planarization layer is located between the source electrode and the anode electrode; the second lead and the anode are on the same layer; the at least three anodes are connected with the second lead; the planarization layer comprises a via hole, the via hole is connected with the second conducting wire, and the via hole is connected to the source electrode or the drain electrode.

In one embodiment, the pixel structure further includes a third connection portion, the third connection portion is on the same layer as the anode, the at least three anodes are connected to the third connection portion through the second conductive line, and the third connection portion is connected to the source or the drain through the via.

In one embodiment, when the via is connected to the drain, the distances between the drain and the at least three anodes are not the same, or at least two of the distances between the drain and the at least three anodes are the same.

In one embodiment, when the via is connected to the source, the source and the at least three anodes have different pitches, or at least two of the pitches between the source and the at least three anodes are the same.

According to the embodiment, as the same light emitting device comprises at least three anodes, and the at least three anodes are connected to the same pixel circuit, if the organic light emitting layer emits light abnormally due to the defect of one of the anodes, and then a dark spot or a bright spot is caused, the organic light emitting layer or the cathode on the anode can be disabled through a repairing means, so that the dark spot can be limited to a smaller area, and the influence of the weakened dark spot or the bright spot on the display effect is reduced.

According to a second aspect of embodiments of the present invention, there is provided a pixel structure including a light emitting device, a pixel circuit, a planarization layer, and a first wire;

the light-emitting device comprises at least two anodes, an organic light-emitting layer and a cathode; the at least two anodes are connected to the same pixel circuit, the organic light emitting layer is positioned on the at least two anodes, and the cathode is positioned on the organic light emitting layer;

the pixel circuit comprises a thin film transistor, the thin film transistor comprises a source electrode and a drain electrode, the source electrode, the drain electrode and the first conducting wire are on the same layer, and the planarization layer is located between the source electrode and the anode;

the planarization layer comprises at least two through holes, the at least two through holes are connected with the at least two anodes in a one-to-one correspondence mode, and the at least two through holes are connected to the source electrode or the drain electrode through the first conducting wire.

In the embodiment of the invention, at least two anodes are connected to the source electrode or the drain electrode through the through holes on the planarization layer, rather than being connected together through a wire and then connected to the source electrode or the drain electrode through one through hole, so that the wiring space of the anode layer can be saved, the influence on the pixel density can be avoided, and the etching residue caused by dense wiring of the anode layer can be avoided.

According to a third aspect of the embodiments of the present invention, there is provided a display panel including sub-pixels arranged in an array, each of the sub-pixels including the pixel structure described above.

According to a fourth aspect of the embodiments of the present invention, there is provided a method for repairing a display panel, including:

detecting a first position of the anode where foreign matter exists before evaporating the organic light emitting layer;

detecting a second position of the light emitting device of which the light emitting brightness satisfies a light emitting abnormal condition when the display panel is lighted;

when the first position and the second position are at least partially overlapped, the organic light-emitting layer or the cathode at the first position is damaged.

In the embodiment of the present invention, a first position of the anode where the foreign substance exists may be detected before the organic light emitting layer is deposited, a second position of the light emitting device where the emission luminance satisfies the abnormal light emitting condition may be detected when the display panel is lit, and the organic light emitting layer or the cathode located at the first position may be damaged when the first position and the second position at least partially overlap. Therefore, when the conductive foreign matter exists on a small number of anodes and causes more organic light emitting layers on the anodes to emit light abnormally, the organic light emitting layers or cathodes on the anodes with the conductive foreign matter are damaged, the influence on normal light emission of the organic light emitting layers on other anodes can be avoided, the area of the area with abnormal light emission can be reduced, and the generation of large dark spots or bright spots can be avoided. Therefore, according to the technical scheme of the embodiment of the invention, the dark spots can be limited in a smaller area, and the influence of the dark spots or the bright spots on the display effect is reduced and weakened.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.

Fig. 1 is a schematic view showing a dark spot on a display panel according to the related art;

fig. 2 is a schematic view showing a dark spot on another display panel according to the related art;

fig. 3 is a schematic view showing a dark spot on another display panel according to the related art;

fig. 4 is a schematic view showing a conductive particle according to the related art;

FIG. 5 is a schematic structural diagram illustrating a pixel structure according to an embodiment of the present invention;

FIG. 6 is a schematic diagram illustrating a dark spot on a display panel according to an embodiment of the present invention;

fig. 7 is a schematic structural diagram illustrating another pixel structure according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram illustrating another pixel structure according to an embodiment of the present invention;

fig. 9 is a flowchart illustrating a repairing method of a display panel according to an embodiment of the present invention.

Detailed Description

Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.

In the related art, in the AMOLED manufacturing process, the dark spot and the bright spot are the most common display panel defects, and the AMOLED yield is always limited. As shown in fig. 1 to 2, even if most of the sub-pixels 11 of the display panel 21 emit light normally, and only one sub-pixel 12 does not emit light, a dark spot 22 is generated macroscopically, which seriously affects the display effect and directly results in product failure. Similarly, for such display devices, the bright spots of the individual pixels cannot be repaired to dark spots by repair means to achieve yield conversion.

In the related art, the cause of the dark spot is generally an anode-cathode short circuit due to conductive foreign matter remaining on the anode, which may be silver particles when the anode includes a silver material. As shown in fig. 3, the reason why the red sub-pixel 31 and the green sub-pixel 32 both normally emit light, the blue sub-pixel 33 normally emits light, and the blue sub-pixel 34 does not emit light is the conductive foreign matter 41 shown in fig. 4, where fig. 4 is a FIB (Focused ion beam) picture of the conductive foreign matter, in fig. 4, the conductive foreign matter 41 is located on the anode 42, and the organic light emitting layer 43 is located between the anode 42 and the cathode 44. The conductive foreign matter on the surface of the anode is a persistent problem in the AMOLED backboard process, and is difficult to eliminate through the anode process. Another cause of dark spots is anode damage. Therefore, how to reduce the influence of the dark spots or the bright spots on the display effect is a technical problem to be solved.

Embodiments of the present invention provide a pixel structure, a display panel, and a repairing method thereof, which can solve the above technical problems, limit a dark spot to a smaller area, and reduce the influence of the dark spot or a bright spot on a display effect.

Embodiments of the present invention provide a pixel structure. The pixel structure comprises a light emitting device and a pixel circuit. As shown in fig. 5, the light emitting device (not shown) includes at least three

anodes

51, 52, 53, an organic light emitting layer (not shown), and a cathode (not shown). At least three

anodes

51, 52, 53 are connected to the same pixel circuit (not shown), an organic light emitting layer is positioned on the at least three

anodes

51, 52, 53, and a cathode is positioned on the organic light emitting layer.

In this embodiment, since the same light emitting device includes at least three anodes, and the at least three anodes are connected to the same pixel circuit, if one of the anodes has a defect, which causes an abnormal light emission of the organic light emitting layer and further causes a dark spot or a bright spot, the organic light emitting layer or the cathode on the anode can be disabled by a repair means, so that the dark spot can be limited in a smaller area, the influence of the weakened dark spot or the bright spot on the display effect is reduced, and the yield of the product is improved.

The pixel structure in the embodiment of the present invention is briefly described above, and the pixel structure in the embodiment of the present invention is described in detail below.

The embodiment of the invention also provides a pixel structure. In the present embodiment, the pixel structure is a pixel structure of a sub-pixel. The pixel structure comprises a light emitting device and a pixel circuit. As shown in fig. 5, the light emitting device (not shown) includes three anodes: an anode 51, an anode 52, an anode 53, and further includes an organic light emitting layer (not shown) and a cathode (not shown).

In the present embodiment, the anode 51, the anode 52, and the anode 53 are in the same layer, and a gap exists between two adjacent anodes. For example, a gap exists between the anode 51 and the anode 52, and a gap exists between the anode 52 and the anode 53. In this embodiment, the anode 51, the anode 52, and the anode 53 may be fabricated by the same set of masks or may be fabricated by the same mask.

In the present embodiment, the anode 51, the anode 52, and the anode 53 are connected to the same pixel circuit (not shown). The pixel circuit may be a 2T1C pixel circuit, a 3T1C pixel circuit, a 4T1C pixel circuit, a 5T1C pixel circuit, a 6T1C pixel circuit, or a 7T1C pixel circuit, but is not limited thereto.

In the present embodiment, the organic light emitting layer is located on the anode 51, the anode 52, and the anode 53. The organic light emitting layer on the anode 51, the organic light emitting layer on the anode 52, and the organic light emitting layer on the anode 53 are integrally formed, that is, there is no pixel defining layer between the organic light emitting layer on the anode 51 and the organic light emitting layer on the anode 52, and there is no pixel defining layer between the organic light emitting layer on the anode 52 and the organic light emitting layer on the anode 53, that is, there is no pixel defining layer between the organic light emitting layers on the adjacent anodes.

In this embodiment, the cathode is located on the organic light emitting layer. Wherein the cathode may be a face electrode. The material of the cathode may be magnesium silver alloy, but is not limited thereto.

In the present embodiment, the light emitting device can be driven by the same pixel circuit to emit light, and when the light emitting device emits light, the organic light emitting layer includes three light emitting regions, which correspond to the anode 51, the anode 52, and the anode 53 one to one. The projections of the three light emitting regions on the anode layer fall within the anode 51, the anode 52, and the anode 53, respectively. The film layer where the anode 51, the anode 52 and the anode 53 are located may be referred to as an anode layer.

When a conductive foreign matter exists on one of the anode 51, the anode 52 and the anode 53, which causes the corresponding light emitting region not to emit light and does not affect the normal light emission of other light emitting regions, only a small dark spot is generated, and the generation of a large dark spot can be avoided.

When conductive foreign matter exists on one of the anode 51, the anode 52 and the anode 53, which causes the anode and the cathode to be short-circuited, and then three light emitting areas do not emit light, the organic light emitting layer or the cathode on the anode can be damaged through a repairing means, so that the short-circuit problem can be solved, and when a pixel circuit drives a light emitting device to emit light, two light emitting areas can emit light. For example, as shown in fig. 6, when the conductive particles are present on the anode 51, which causes the anode 51, the anode 52, and the anode 53 to be short-circuited with the cathode, and thus none of the corresponding three light emitting regions emits light, the organic light emitting layer or the cathode on the anode 51 may be damaged by the repair means, when the pixel circuit drives the light emitting device to emit light, the light emitting region 61 corresponding to the anode 51 does not emit light, and the two light emitting regions 62 and 63 corresponding to the anode 52 and the anode 53 may emit light. Thus, a small dark spot is generated, and a large dark spot can be avoided.

When the brightness of three light emitting areas is larger than the specified brightness due to the conductive foreign matter existing on one of the anode 51, the anode 52 and the anode 53, the organic light emitting layer or the cathode on the anode can be damaged through a repairing means so that the light emitting area corresponding to the anode does not emit light, and the light emitting areas corresponding to the other two anodes can emit light normally, so that a small dark spot can be generated, and a large bright spot can be avoided.

In this embodiment, since the same light emitting device includes at least three anodes, and the at least three anodes are connected to the same pixel circuit, if one of the anodes has a defect, which causes an abnormal light emission of the organic light emitting layer, thereby causing a dark spot or a bright spot, the organic light emitting layer or the cathode on the anode can be disabled by a repair means, thereby limiting the dark spot in a smaller area, and reducing the influence of the reduced dark spot or the bright spot on the display effect.

The embodiment of the invention also provides a pixel structure. In this embodiment, as shown in fig. 5, the pixel structure further includes a planarization layer 54 and a first conductive line 57. The pixel circuit includes a thin film transistor, which may be a driving transistor, for driving the light emitting device to emit light. The thin film transistor includes a source electrode (not shown) and a drain electrode 58, the source electrode, the drain electrode 58 and the first conductive line 57 are on the same layer, and the planarization layer 54 is located between the source electrode and the anode 51, the anode 52, and the anode 53, or the planarization layer 54 is located between the drain electrode 58 and the anode 51, the anode 52, and the anode 53.

In the present embodiment, the planarization layer 54 includes three vias (not shown) thereon, the three vias are connected to the

anodes

51, 52, 53 in a one-to-one correspondence, and the three vias are connected to the drain 58 through the first conductive line 57. In another embodiment, three vias are connected to the source via first conductive lines 57. Thus, the anode 51, the anode 52, and the anode 53 are connected to the drain 58 through the via holes on the planarization layer 54, rather than being connected to the drain 58 through one via hole after the anode layers are connected together through wires, so that the routing space of the anode layers can be saved, the pixel density can be prevented from being affected, and etching residue caused by dense routing of the anode layers can be prevented.

In this embodiment, the pixel structure further includes a first connection portion 59, a first connection portion 510, a first connection portion 511, a second connection portion 55, and a second connection portion 56, wherein the first connection portion 59, the first connection portion 510, the first connection portion 511 and the

anodes

51, 52, and 53 are on the same layer, and the second connection portion 55, the second connection portion 56 and the first conductive line 57 are on the same layer. The

first connection portions

59, 510, 511 are connected to the

anodes

51, 52, 53 in a one-to-one correspondence, and the

first connection portions

59, 510, 511 are connected to the three vias in a one-to-one correspondence.

In the present embodiment, the

second connection portions

55, 56 and the drain electrodes 58 are connected to the three via holes in a one-to-one correspondence manner, and the

second connection portions

55 and 56 are connected to the drain electrodes 58 through the first wires 57.

In another embodiment, when the three vias are connected to the source electrode through the first conductive line 57, the second connection portion 55, the second connection portion 56, and the source electrode are connected to the three vias in a one-to-one correspondence, and the second connection portion 55, the second connection portion 56 are connected to the source electrode through the first conductive line 57.

In the present embodiment, the drain electrode 58 is not spaced from the

anodes

51, 52, and 53. Or the projection of the anode 51, the anode 52 and the anode 53 on the film layer where the drain 58 is located is different from the distance between the drain 58. For example, the distances between the projection of the anode 51, the anode 52 and the anode 53 on the film layer where the drain 58 is located and the drain 58 decrease in sequence.

In another embodiment, the drain electrode 58 is the same as at least two of the spacings between the

anodes

51, 52, 53. For example, the drain electrode 58 is spaced from the anode 51 and the anode 53 by the same distance, and the drain electrode 58 is spaced from the anode 52 by a distance smaller than the distance between the drain electrode 58 and the anode 51.

In another embodiment, when the three through holes are connected to the source electrode through the first conductive line, the source electrode is not spaced apart from the anode 51, the anode 52, and the anode 53. In another embodiment, at least two of the spacings between the source and

anode

51, 52, 53 are the same. For example, the source is spaced from the anode 51 by the same distance as the anode 53, and the source is spaced from the anode 52 by a distance smaller than the distance between the source and the anode 51.

The embodiment of the invention also provides a pixel structure. In this embodiment, as shown in fig. 7, the pixel structure further includes a planarization layer 54 and a second conductive line 71, and the pixel circuit includes a thin film transistor, which may be a driving transistor, for driving the light emitting device to emit light. The thin film transistor includes a source electrode (not shown) and a drain electrode 58, which are on the same layer as the drain electrode 58. The planarization layer 54 is located between the drain electrode 58 and the

anode

51, 52, 53. The second lead 71 is in the same layer as the anode 51, the anode 52 and the anode 53, and the anode 51, the anode 52 and the anode 53 are connected to the second lead 71.

In this embodiment, the planarization layer 54 includes a via connected to the second conductive line 71, and the via is connected to the drain electrode 58. In another embodiment, the via is connected to the source.

In this embodiment, as shown in fig. 6, the pixel structure further includes a third connection portion 72, the third connection portion 72 is on the same layer as the anode 51, the anode 52, and the anode 53, the anode 51, the anode 52, and the anode 53 are connected to the third connection portion 72 through a second wire 71, and the third connection portion 72 is connected to the drain 58 through the hole. In another embodiment, the third connection portion 72 is connected to the source electrode through a hole.

In the present embodiment, the drain electrode 58 is not spaced from the

anodes

51, 52, and 53. Or the projection of the anode 51, the anode 52 and the anode 53 on the film layer where the drain 58 is located is different from the distance between the drain 58. For example, the distances between the projection of the anode 51, the anode 52 and the anode 53 on the film layer where the drain 58 is located and the drain 58 are sequentially increased.

anodes

In another embodiment, when the via is connected to the source, the source is not equally spaced from the

anodes

51, 52, 53. In another embodiment, at least two of the spacings between the source and

anode

51, 52, 53 are the same.

In the above-described embodiments, the light emitting device includes three anodes. In another embodiment, the light emitting device comprises four anodes, or more anodes.

The embodiment of the invention also provides a pixel structure. As shown in fig. 8, the pixel structure includes a light emitting device (not shown), a pixel circuit (not shown), a planarization layer 54, and a first wire 57.

In the present embodiment, the light emitting device includes at least two

anodes

51, 52, an organic light emitting layer (not shown), and a cathode (not shown). At least two

anodes

51, 52 are connected to the same pixel circuit, an organic light emitting layer is positioned on the at least two

anodes

51, 52, and a cathode is positioned on the organic light emitting layer.

In the present embodiment, the pixel circuit includes a thin film transistor (tft) including a source electrode (not shown) and a drain electrode 58, the source electrode, the drain electrode 58 and the first conductive line 57 are on the same layer, and the planarization layer 54 is located between the source electrode and the

anode electrodes

51, 52.

The planarization layer 54 includes at least two vias (not shown) connected to the at least two

anodes

51, 52 in a one-to-one correspondence, and at least two vias connected to the source or drain electrode 58 through the first conductive line 57.

In this embodiment, at least two anodes are connected to the source electrode or the drain electrode through the via holes on the planarization layer, instead of being connected to the source electrode or the drain electrode through one via hole after the anode layers are connected together through wires, so that the wiring space of the anode layers can be saved, the pixel density can be prevented from being affected, and etching residue caused by dense wiring of the anode layers can be prevented.

In this embodiment, a brief description is given of a pixel structure, and the pixel structure is described in detail below.

In this embodiment, the light emitting device includes two anodes: the anode 51 and the anode 52, and further include an organic light emitting layer (not shown) and a cathode (not shown). The anode 51 and the anode 52 are connected to the same pixel circuit, the organic light emitting layer is disposed on the anode 51 and the anode 52, and the cathode is disposed on the organic light emitting layer.

In the present embodiment, the pixel circuit includes a thin film transistor (tft) including a source electrode (not shown) and a drain electrode 58, the source electrode, the drain electrode 58 and the first conductive line 57 are in the same layer, and the planarization layer 54 is located between the source electrode and the

anode electrode

51, 52.

In the present embodiment, the planarization layer 54 includes two vias (not shown) connected to the

anodes

51 and 52 in a one-to-one correspondence, and the two vias are connected to the drain electrode 58 through the first conductive line 57. In another embodiment, two vias are connected to the source via a first conductive line 57. Thus, the anode 51 and the anode 52 are connected to the drain 58 through the via hole on the planarization layer 54, rather than being connected to the drain 58 through a via hole after the anode layer is connected together through a wire, so that the wiring space of the anode layer can be saved, the pixel density can be prevented from being affected, and etching residue caused by dense anode layer wiring can be prevented.

It should be noted that the via hole described in the embodiment of the present invention refers to a conductive member penetrating through the planarization layer 54.

In this embodiment, as shown in fig. 8, the pixel structure further includes a first connection portion 59, a first connection portion 510, and a second connection portion 55, the first connection portion 59, the first connection portion 510 are on the same layer as the anode 51 and the anode 52, and the second connection portion 55 is on the same layer as the first conductive line 57. The

first connection portions

59 and 510 are connected to the

anodes

51 and 52 in a one-to-one correspondence, and the

first connection portions

59 and 510 are connected to the two vias in a one-to-one correspondence.

In the present embodiment, the second connection portions 55 and the drain electrodes 58 are connected to the two via holes in a one-to-one correspondence manner, and the second connection portions 55 are connected to the drain electrodes 58 through the first wires 57.

In another embodiment, when two vias are connected to the source electrode through the first conductive line 57, the second connection portion 55, the source electrode and the two vias are connected in a one-to-one correspondence, and the second connection portion 55 is connected to the source electrode through the first conductive line 57.

In the present embodiment, the distance between the drain electrode 58 and the

anode

51, 52 is different. Or, the projection of the anode 51 and the anode 52 on the film layer where the drain 58 is located is different from the distance between the drain 58. For example, the distance between the projection of the anode 51 and the anode 52 on the film layer where the drain 58 is located and the drain 58 decreases in sequence.

In another embodiment, the drain electrode 58 is spaced the same distance from the

anode

51, 52.

In another embodiment, when the two vias are connected to the source electrode through the first conductive line, the source electrode is not spaced apart from the anode 51 and the anode 52. In another embodiment, the source is spaced equally from the

anodes

51, 52.

The embodiment of the invention also provides a display panel. The display panel comprises sub-pixels arranged in an array, and each sub-pixel comprises the pixel structure of any one of the embodiments.

In this embodiment, the display panel includes pixel units arranged in an array, and each pixel unit includes a red sub-pixel, a green sub-pixel, and a blue sub-pixel. The red sub-pixel, the green sub-pixel and the blue sub-pixel may respectively include the pixel structures of any of the above embodiments. It should be noted that the structure of the pixel unit is not limited to the structure described in the embodiment of the present invention.

The embodiment of the invention also provides a display panel repairing method, which is used for repairing the display panel. As shown in FIG. 9, the repairing method of the display panel comprises the following steps 901-903:

in step 901, a first position of an anode where foreign matter exists is detected before an organic light emitting layer is evaporated.

In this embodiment, after the preparation of the anode is finished, before the deposition of the organic light emitting layer, Automatic Optical Inspection (AOI) may be performed to detect the first position of the anode where the foreign substance exists. The foreign matter may be conductive, but not limited thereto. When a plurality of foreign objects are present, a plurality of first positions can be obtained, the plurality of foreign objects corresponding to the plurality of first positions one to one.

In this embodiment, the first position is a first coordinate.

In step 902, a second position of the light emitting device whose light emission luminance satisfies the light emission abnormality condition is detected while the display panel is lit.

In this embodiment, after the preparation of the display panel is completed, the display panel may be lit up, and automatic optical detection may be performed to detect the second position of the light emitting device whose light emitting luminance satisfies the light emitting abnormal condition. The abnormal lighting condition comprises the lighting brightness smaller than the first specified brightness and the lighting brightness larger than the second specified brightness, and the first specified brightness is smaller than the second specified brightness. When the luminance of the light emitted by the sub-pixel is less than the first specified luminance, a dark spot is formed, and when the luminance of the light emitted by the sub-pixel is greater than the second specified luminance, a bright spot is formed.

In this embodiment, the second position is a second coordinate. Since the area occupied by the light emitting device is larger than the area occupied by the foreign substance on the anode, the second coordinate may be a set of coordinates. It should be noted that the first coordinate may also be a set of coordinates.

In step 903, the organic light emitting layer or the cathode at the first location is damaged when the first location and the second location at least partially coincide.

In this embodiment, when the first position partially coincides or completely coincides with the second position, the organic light emitting layer or the cathode located at the first position may be damaged. The first position and the second position partially coincide with each other, that is, one part of the first position coincides with the second position, and the other part of the first position does not coincide with the second position. The first position and the second position completely coincide with each other, meaning that the first position is located in the second position.

In this embodiment, the organic light emitting layer or the cathode at the first position may be damaged by laser light.

In this embodiment, a first position of the anode where the foreign substance exists may be detected before the organic light emitting layer is deposited, a second position of the light emitting device where the emission luminance satisfies the light emission abnormal condition may be detected when the display panel is lit, and the organic light emitting layer or the cathode located at the first position may be damaged when the first position and the second position at least partially overlap. Therefore, when the conductive foreign matter exists on a small number of anodes and causes more organic light emitting layers on the anodes to emit light abnormally, the organic light emitting layers or cathodes on the anodes with the conductive foreign matter are damaged, the influence on normal light emission of the organic light emitting layers on other anodes can be avoided, the area of the area with abnormal light emission can be reduced, and the generation of large dark spots or bright spots can be avoided. Therefore, according to the technical scheme of the embodiment of the invention, the dark spots can be limited in a smaller area, and the influence of the dark spots or the bright spots on the display effect is reduced and weakened.

In an embodiment of the present invention, a display device using the display panel may include: any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator and the like.

The forming process adopted in the above process may include, for example: deposition, sputtering and other film forming processes and etching and other patterning processes.

It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.

In the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "plurality" means two or more unless expressly limited otherwise.

Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims

1. A pixel structure is characterized by comprising a light-emitting device and a pixel circuit; the light emitting device comprises at least three anodes, an organic light emitting layer and a cathode; the at least three anodes are connected to the same pixel circuit, the organic light emitting layer is located on the at least three anodes, and the cathode is located on the organic light emitting layer.

2. The pixel structure of claim 1, wherein a gap exists between two adjacent anodes.

3. The pixel structure of claim 1, further comprising a planarization layer and a first conductive line, wherein the pixel circuit comprises a thin film transistor, the thin film transistor comprises a source electrode and a drain electrode, the source electrode, the drain electrode and the first conductive line are on the same layer, and the planarization layer is located between the source electrode and the anode electrode;

the planarization layer comprises at least three through holes, the at least three through holes are connected with the at least three anodes in a one-to-one correspondence mode, and the at least three through holes are connected to the source electrode or the drain electrode through the first conducting wire.

4. The pixel structure according to claim 3, further comprising at least three first connection portions on the same layer as the anode and at least two second connection portions on the same layer as the first conductive line;

the at least three first connecting parts are connected with the at least three anodes in a one-to-one corresponding manner, and the at least three first connecting parts are connected with the at least three via holes in a one-to-one corresponding manner;

when the at least three via holes are connected to the drain electrode through the first conducting wire, the at least two second connecting portions, the drain electrode and the at least three via holes are correspondingly connected one by one, and the at least two second connecting portions are connected to the drain electrode through the first conducting wire;

when the at least three via holes are connected to the source electrode through the first wire, the at least two second connecting portions, the source electrode and the at least three via holes are connected in a one-to-one correspondence manner, and the at least two second connecting portions are connected to the source electrode through the first wire.

5. The pixel structure according to claim 3, wherein when the at least three via holes are connected to the drain electrode through the first conductive lines, the distances between the drain electrode and the at least three anodes are different, or at least two of the distances between the drain electrode and the at least three anodes are the same;

when the at least three via holes are connected to the source electrode through the first conducting wire, the distances between the source electrode and the at least three anodes are different, or at least two distances among the distances between the source electrode and the at least three anodes are the same.

6. The pixel structure of claim 1, further comprising a planarization layer and a second conductive line, wherein the pixel circuit comprises a thin film transistor, the thin film transistor comprises a source electrode and a drain electrode, the source electrode and the drain electrode are on the same layer, and the planarization layer is located between the source electrode and the anode electrode; the second lead and the anode are on the same layer; the at least three anodes are connected with the second lead;

the planarization layer comprises a via hole, the via hole is connected with the second conducting wire, and the via hole is connected to the source electrode or the drain electrode.

7. The pixel structure according to claim 6, further comprising a third connection portion, wherein the third connection portion is on the same layer as the anode, the at least three anodes are connected to the third connection portion through the second conductive line, and the third connection portion is connected to the source or the drain through the via.

8. The pixel structure according to claim 7, wherein when the via is connected to the drain, the drain and the at least three anodes have different pitches, or at least two of the pitches between the drain and the at least three anodes are the same;

when the via hole is connected to the source electrode, the distance between the source electrode and the at least three anodes is different, or at least two distances among the distances between the source electrode and the at least three anodes are the same.

9. A pixel structure is characterized by comprising a light-emitting device, a pixel circuit, a planarization layer and a first lead;

10. A display panel comprising sub-pixels arranged in an array, each of the sub-pixels comprising a pixel structure according to any one of claims 1 to 9.

11. A method for repairing a display panel according to claim 10, comprising: