CN111163625B - Semi-anechoic chamber and its floor structure - Google Patents
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- 239000010410 layer Substances 0.000 claims description 59
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- 230000000694 effects Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 2
- 229910001335 Galvanized steel Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008397 galvanized steel Substances 0.000 description 1
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0001—Rooms or chambers
- H05K9/0003—Shielded walls, floors, ceilings, e.g. wallpaper, wall panel, electro-conductive plaster, concrete, cement, mortar
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- B32B15/00—Layered products comprising a layer of metal
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- B32B15/00—Layered products comprising a layer of metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/266—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B2307/00—Properties of the layers or laminate
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Abstract
一种半电波暗室的地板结构,包括一反射板以及一接地架构,该反射板具有一第一金属层、一第二金属层及一绝缘层,该绝缘层具有一通孔使在该绝缘层上下二侧的第一金属层及第二金属层能电性连接,该接地架构连接该第二金属层,以使第一金属层及第二金属层上的电流能流向地面。
A floor structure of a semi-anechoic chamber, comprising a reflection plate and a grounding structure, the reflection plate has a first metal layer, a second metal layer and an insulating layer, the insulating layer has a through hole so that the upper and lower layers of the insulating layer The first metal layer and the second metal layer on the two sides can be electrically connected, and the ground structure is connected to the second metal layer, so that the current on the first metal layer and the second metal layer can flow to the ground.
Description
技术领域technical field
本发明有关一种半电波暗室,特别是关于一种半电波暗室的地板结构。The present invention relates to a semi-anechoic chamber, in particular to a floor structure of the semi-anechoic chamber.
背景技术Background technique
电子装置可能受到周遭的电磁波干扰而无法正常正作,为解决电磁干扰问题,通常在产品上市前都会进行电磁兼容性(ElectroMagnetic Compatibility;EMC)测试,此测试通常要于符合要求的实验室中进行,例如半电波暗室。Electronic devices may be interfered by surrounding electromagnetic waves and cannot function normally. To solve the problem of electromagnetic interference, electromagnetic compatibility (ElectroMagnetic Compatibility; EMC) tests are usually carried out before products are launched. This test is usually carried out in a laboratory that meets the requirements. , such as a semi-anechoic chamber.
图1显示传统半电波暗室100的上视图,其为由墙面102、天花板(图中未示)及地板所形成的六面体空间,其中墙面102及天花板上有吸收电磁波的材料以避免电磁波被墙面102或天花板反射而影响测试结果,地板是由多个反射板104拼接而成,用以模拟无限大的金属接地面,半电波暗室100会有一电磁波发射区106供设置电磁波发射装置以及一电磁波接收区108供设置电磁波接收装置,当电磁波发射区106中的电磁波发射装置(图中未示)发出的电磁波发射到反射板104时,会被反射板104反射,同时反射板104上会产生电流I1,电流I1会流向墙面102,再经由墙面102流向地面GND。FIG. 1 shows a top view of a conventional
图2显示图1的半电波暗室100的局部剖面图,每一个反射板104包括一绝缘层1044及二金属层1042及1046分别在绝缘层1044的二侧,反射板104之间是利用一上板110、一下板112及一螺丝114形成的接合结构来连接,墙面102上有一L型支撑架116用以支撑相邻的反射板104,邻接墙面102的反射板104可利用一金属线118将金属层1042连接至墙面102,支撑架116及金属线118皆可使反射板104上的电流流向墙面102。FIG. 2 shows a partial cross-sectional view of the
如图2所示,当图1中的其中一个反射板104上产生电流I1时,电流I1将透过反射板104之间的接合结构流向邻近的反射板104,最后流向墙面102,再经由墙面102流向地面GND。As shown in FIG. 2 , when a current I1 is generated on one of the
然而,传统半电波暗室100让电流I1流向四周墙面102,再透过墙面102流向地面GND的方式,造成较差的接地效果,进而影响了低频(例如30MHz~300MHz)特性的测试。However, the conventional
发明内容SUMMARY OF THE INVENTION
本发明的目的之一,在于提出一种半电波暗室的地板结构。One of the objectives of the present invention is to provide a floor structure of a semi-anechoic chamber.
本发明的目的之一,在于提出一种改善接地效果的半电波暗室。One of the objectives of the present invention is to provide a semi-anechoic chamber with improved grounding effect.
根据本发明,一种半电波暗室的地板结构包括一反射板具有一第一金属层、一第二金属层及一绝缘层。该绝缘层在该第一金属层及该第二金属层之间,且该绝缘层具有一通孔,该第一金属层上的电流可经由该通孔流向该第二金属层。该地板结构更包括一接地架构连接该第二金属层,以使该第二金属层上的电流流向地面。According to the present invention, a floor structure of a semi-anechoic chamber includes a reflector having a first metal layer, a second metal layer and an insulating layer. The insulating layer is between the first metal layer and the second metal layer, and the insulating layer has a through hole through which the current on the first metal layer can flow to the second metal layer. The floor structure further includes a ground structure connected to the second metal layer, so that the current on the second metal layer flows to the ground.
根据本发明,一种半电波暗室包括多个反射板及多个接地架构,该多个接地架构分别连接该多个反射板,以使该多个反射板上的电流流向地面。由于每一个反射板可经由与其连接的接地架构连接至地面,故该半电板暗室具有较佳的接地效果,可改善低频特性的测试。According to the present invention, a semi-anechoic chamber includes a plurality of reflection plates and a plurality of ground structures, and the plurality of ground structures are respectively connected to the plurality of reflection plates, so that the currents on the plurality of reflection plates flow to the ground. Since each reflector can be connected to the ground through the grounding structure connected thereto, the semi-electric darkroom has a better grounding effect, which can improve the test of low frequency characteristics.
附图说明Description of drawings
图1显示传统半电波暗室的上视图。Figure 1 shows a top view of a conventional semi-anechoic chamber.
图2显示传统半电波暗室的局部剖面图。Figure 2 shows a partial cross-sectional view of a conventional semi-anechoic chamber.
图3显示本发明的地板结构。Figure 3 shows the floor structure of the present invention.
图4显示图3中AA’方向的剖面图。Fig. 4 shows a cross-sectional view in the direction AA' of Fig. 3 .
图5显示本发明半电波暗室的第一实施例。Fig. 5 shows the first embodiment of the semi-anechoic chamber of the present invention.
图6显示图5中部分区域的剖面图。FIG. 6 shows a cross-sectional view of a portion of the area in FIG. 5 .
图7显示本发明半电波暗室的第二实施例。Figure 7 shows a second embodiment of the semi-anechoic chamber of the present invention.
图8显示本发明半电波暗室的第三实施例。FIG. 8 shows a third embodiment of the semi-anechoic chamber of the present invention.
附图标记列表:100-半电波暗室;102-墙面;104-反射板;1042-金属层;1044-绝缘层;1046-金属层;106-电磁波发射区;108-电磁波接收区;110-上板;112-下板;114-螺丝;116-支撑架;118-金属线;200-地板结构;202-反射板;2022-金属层;2024-绝缘层;2026-金属层;204-通孔;206-接地架构;300-半电波暗室;302-墙面;304-电磁波发射区;306-电磁波接收区;308-主要反射区;310-主要反射区;312-主要反射区;314-主要反射区。List of reference signs: 100-semi-anechoic chamber; 102-wall surface; 104-reflector plate; 1042-metal layer; 1044-insulation layer; 1046-metal layer; Upper plate; 112-lower plate; 114-screw; 116-support frame; 118-metal wire; 200-floor structure; 202-reflector; 2022-metal layer; 2024-insulation layer; 2026-metal layer; 204-pass Hole; 206-grounding structure; 300-semi-anechoic chamber; 302-wall; 304-electromagnetic wave transmitting area; 306-electromagnetic wave receiving area; 308-main reflection area; 310-main reflection area; 312-main reflection area; 314- main reflection area.
具体实施方式Detailed ways
图3显示本发明的半电波暗室的地板结构200,图4显示图3中AA’方向的剖面图。FIG. 3 shows the
参照图3及图4,地板结构200包括反射板202及接地架构206,反射板202具有二金属层2022及2026及一绝缘层2024,绝缘层2024是在二金属层2022及2026之间,绝缘层2024具有通孔204,金属层2022及2026透过通孔204连接以使金属层2022上的电流I1能流向金属层2026,金属层2022及2026可以是但不限于镀锌钢板,绝缘层2024可以是但不限于木板。接地架构206连接反射板202,用以使反射板202上的电流I1流向地面GND,在此实施例中,接地架构206是以一支撑架实现,该支撑架设置在地面GND上且用以支撑反射板202,支撑架连接反射板202的金属层2026。当电磁波发射到反射板202时,反射板202的金属层2022上会产生电流I1,电流I1经由通孔204流向金属层2026后,再通过支撑架(接地架构206)流向地面GND。3 and 4 , the
在一实施例中,通孔204中可填入导电材料,以使金属层2022电性连接金属层2026。In one embodiment, the
在一实施例中,可利用一螺丝经通孔204将反射板202固定在支撑架上,而金属层2022可透过该螺丝电性连接金属层2026。In one embodiment, a screw can be used to fix the
在图4的实施例中,反射板202为三层结构,但本发明并不限于此,例如可在金属层2022及2026之间加入更多的绝缘层,或者将反射板202修改为单层的金属板。此外,图3及图4中通孔204及接地架构206的数量及位置也可以依需求改变。In the embodiment shown in FIG. 4 , the
图5显示本发明半电波暗室300的第一实施例,其包括多个反射板202拼接成半电波暗室300的地板,半电波暗室300有一电磁波发射区304供设置电磁波发射装置以及一电磁波接收区306供设置电磁波接收装置,当有电磁波发射到反射板202时,反射板202会反射电磁波,同时反射板202上会产生电流I1。每一个反射板202各自连接一接地架构206(如图4所示),使得每一个反射板202上的电流I1能透过与其连接的接地架构206流向地面GND,电流I1不用先流向墙面302后,再流向地面GND,故本发明的半电波暗室300具有较好的接地效果,可改善低频特性的测试。在图5的半电波暗室300中,反射板202可以如图4所示为一多层结构,也可以是单层的金属板。FIG. 5 shows the first embodiment of the
图6显示图5中部分区域的剖面图,如图6所示,本发明反射板202上的电流I1除了可以透过通孔204及接地架构206流向地面GND之外,也可以透过与反射板202邻接的墙面302流向地面GND,相较于习知技术,本发明能提供更多的电流路径让反射板202上的电流I1流向地面GND,具有较佳的接地效果。FIG. 6 shows a cross-sectional view of a part of the area shown in FIG. 5. As shown in FIG. 6, the current I1 on the
如图5所示,每一个反射板202可透过与其连接的接地架构206让电流I1流向地面,因此本发明的半电波暗室300不用像传统半电波暗室100一样,地板必需完全由反射板104拼接而成,以使电流I1可以流向墙面102,进而流向地面。As shown in FIG. 5 , each
图7显示本发明半电波暗室300的第二实施例,在此实施例中,半电波暗室300的地板并非全由反射板202构成,反射板202仅设置在电磁波发射区304及电磁波接收区306之间的区域。FIG. 7 shows the second embodiment of the
图8显示本发明半电波暗室300的第三实施例,在此实施例中,反射板202只设置在主要反射区308、310、312及314。主要反射区在目前的规范中有清楚定义,例如ANSI C63.4之5.3节,本领域的技术人员可以判断出半电波暗室300中的主要反射区的位置。FIG. 8 shows a third embodiment of the
在目前的规范中,半电波暗室的正规化场地衰减值(Normalized SiteAttenuation;NSA)的误差必需在+/-4dB以内,而传统的半电波暗室100的NSA的误差大约在+/-3.5dB,但本发明的半电波暗室300的NSA的误差可以降低到+/-2.5dB,故相较于传统的半电波暗室100,本发明的半电波暗室300具有更好的功效。In the current specification, the normalized site attenuation value (Normalized Site Attenuation; NSA) of the semi-anechoic chamber must have an error within +/-4dB, while the NSA error of the traditional
以上对于本发明之较佳实施例所作的叙述为阐明之目的,而无意限定本发明精确地为所揭露的形式,基于以上的教导或从本发明的实施例学习而作修改或变化是可能的,实施例为解说本发明的原理以及让熟习该项技术者以各种实施例利用本发明在实际应用上而选择及叙述,本发明的技术思想企图由权利要求书的范围及其均等来决定。The above description of the preferred embodiments of the present invention is for illustrative purposes and is not intended to limit the present invention to the exact form disclosed. Modifications or changes are possible based on the above teachings or learning from the embodiments of the present invention. , the embodiment is to illustrate the principle of the present invention and to allow those skilled in the art to select and describe the practical application of the present invention with various embodiments, and the technical idea of the present invention is intended to be determined by the scope of the claims and their equality. .
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