CN111138288A - 含五元环状β-酮结构的光刻胶树脂单体及其合成方法 - Google Patents
含五元环状β-酮结构的光刻胶树脂单体及其合成方法 Download PDFInfo
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 66
- 239000011347 resin Substances 0.000 title claims abstract description 59
- 229920005989 resin Polymers 0.000 title claims abstract description 59
- 239000000178 monomer Substances 0.000 title claims abstract description 57
- 238000010189 synthetic method Methods 0.000 title claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 9
- 125000000753 cycloalkyl group Chemical group 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 7
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 14
- 125000004122 cyclic group Chemical group 0.000 claims description 13
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- 150000001875 compounds Chemical class 0.000 claims description 9
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 6
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 claims description 6
- -1 diol compound Chemical class 0.000 claims description 6
- 150000004820 halides Chemical class 0.000 claims description 6
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- HFBMWMNUJJDEQZ-UHFFFAOYSA-N acryloyl chloride Chemical compound ClC(=O)C=C HFBMWMNUJJDEQZ-UHFFFAOYSA-N 0.000 claims description 3
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- 229940098779 methanesulfonic acid Drugs 0.000 claims description 3
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- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 4
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- KWUKZOQXKSDZJN-UHFFFAOYSA-N 1-chloroethoxycyclohexane Chemical compound CC(Cl)OC1CCCCC1 KWUKZOQXKSDZJN-UHFFFAOYSA-N 0.000 description 3
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- YYOXXWPBNOYTIX-UHFFFAOYSA-N 1-(chloromethoxy)-2,2-dimethylpropane Chemical compound CC(C)(C)COCCl YYOXXWPBNOYTIX-UHFFFAOYSA-N 0.000 description 1
- SJOVULDVRPDANF-UHFFFAOYSA-N 1-chloro-1-methoxy-2-methylpropane Chemical compound COC(Cl)C(C)C SJOVULDVRPDANF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BUDQDWGNQVEFAC-UHFFFAOYSA-N Dihydropyran Chemical compound C1COC=CC1 BUDQDWGNQVEFAC-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
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- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
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- C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
- C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
- C07C69/54—Acrylic acid esters; Methacrylic acid esters
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- C07C45/00—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds
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Abstract
Description
技术领域
本发明涉及化学合成及光刻材料领域,具体是一种含五元环状β-酮结构的光刻胶树脂单体及其合成方法。
背景技术
光刻技术是指利用光刻材料(特指光刻胶)在可见光、紫外线、电子束等作用下的化学敏感性,通过曝光、显影、刻蚀等工艺过程,将设计在掩膜版上的图形转移到衬底上的图形微细加工技术。
光刻材料(特指光刻胶),又称光致抗蚀剂,是光刻技术中涉及的最关键的功能性化学材料,主要成分是树脂、光致产酸剂、以及相应的添加剂和溶剂,这类材料具有光(包括可见光、紫外线、电子束等)化学敏感性,经光化学反应,本身在显影液中的溶解性发生变化。根据光化学反应机理不同,光刻胶分为正性光刻胶与负性光刻胶:曝光后,光刻胶在显影液中溶解性增加,得到与掩膜版相同图形的称为正性光刻胶;曝光后,光刻胶在显影液中溶解性降低甚至不溶,得到与掩膜版相反图形的称为负性光刻胶。
其中,光刻胶所使用的树脂是由多种树脂单体共聚而成的聚合物,其中酸敏树脂单体是实现曝光前后树脂在显影液中溶解差异的重要组成部分,常见的酸敏树脂单体含有酸敏基团,酸敏基团在曝光后光酸的作用下脱去,生成酸性基团,从而溶于碱性显影液,酸敏单体脱保护的活化能高低和其碱溶性是影响光刻图案好坏的重要因素。现有技术中因为酸敏单体的特定结构,存在曝光敏感性差,曝光前后碱溶性差距较小等问题,从而影响光刻图案的质量。
发明内容
本发明实施例的目的在于提供一种含五元环状β-酮结构的光刻胶树脂单体,以解决上述背景技术中提出的问题。
为实现上述目的,本发明实施例提供如下技术方案:
一种含五元环状β-酮结构的光刻胶树脂单体,其结构通式为式I或式II:
式中,R1为甲基或氢;R2、R3分别独立地为氢、烷基、环烷基中的一种;R4为烷基或环烷基;n为不小于1的整数;R’为氢、烷基、环烷基中的一种。
其中,当式I的R2与R4或者R3与R4之间通过共价键成环时,即为式II。
作为本发明实施例的一个优选方案,所述光刻胶树脂单体的结构式为式III~式XIV中的一种:
本发明实施例的另一目的在于提供一种上述含五元环状β-酮结构的光刻胶树脂单体的合成方法,其包括以下步骤:
将4-环戊烯-1,3-二酮与氧化剂进行氧化反应,得到三元环氧结构的第一中间体;
将所述第一中间体在酸/水体系下进行水解,得到二醇化合物;
在碱性体系下,将所述二醇化合物与丙烯酰氯或者甲基丙烯酰氯进行反应,得到第二中间体;
将所述第二中间体与通式为式XV的卤代物进行反应,得到通式为式I的光刻胶树脂单体;或者将所述第二中间体与通式为式XVI的邻烯基环醚结构化合物进行反应,得到通式为式II的光刻胶树脂单体;
作为本发明实施例的另一个优选方案,所述氧化剂为间氯过氧苯甲酸和/或过氧化氢。
作为本发明实施例的另一个优选方案,所述酸/水体系中的酸为硫酸和/或三氟甲磺酸。
作为本发明实施例的另一个优选方案,所述将所述第二中间体与通式为式XV的卤代物进行反应,得到通式为式I的光刻胶树脂单体的步骤,具体包括:
在碱性体系下,将所述第二中间体与通式为式XV的卤代物进行反应,得到通式为式I的光刻胶树脂单体。
作为本发明实施例的另一个优选方案,所述碱性体系为有机碱体系;所述有机碱为三乙胺、二异丙基胺、吡啶中的一种。
作为本发明实施例的另一个优选方案,所述将所述第二中间体与通式为式XVI的邻烯基环醚结构化合物进行反应,得到通式为式II的光刻胶树脂单体的步骤,具体包括:
在甲磺酸催化下,将所述第二中间体与通式为式XVI的邻烯基环醚结构化合物进行加成反应,得到通式为式II的光刻胶树脂单体。
作为本发明实施例的另一个优选方案,所述通式为式XVI的邻烯基环醚结构化合物的合成方法包括以下步骤:
将通式为R4OH的化合物与通式为R2COR3的化合物在卤化氢和硫酸钠作用下进行反应,得到所述通式为式XVI的邻烯基环醚结构化合物。
本发明实施例的另一目的在于提供一种上述含五元环状β-酮结构的光刻胶树脂单体在光刻材料中的应用。
与现有技术相比,本发明实施例的有益效果是:
本发明提供了一种新的光刻胶树脂单体,该光刻胶树脂单体含有光敏基团,与其它树脂单体聚合形成光刻胶树脂,在曝光后会脱去半缩醛(酮)保护基,半缩醛(酮)的活化能比较低,敏感性更高,其脱保护后会形成羟基结构,从而使极性增大,溶解于碱性显影剂(一般为TMAH),并且由于双酮的吸电子作用,使两个酮羰基中间碳上的氢具有一定的酸性,故该光刻胶树脂单体具有曝光前后溶解度差异大的特点,其能够降低粗糙度,提高灵敏度和分辨率,且该结构含有双酮,极性大,提高了与硅片之间的粘附力,有利于形成均一性良好的光刻图案。
具体实施方式
下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例1
该实施例提供了一种含五元环状β-酮结构的光刻胶树脂单体,该光刻胶树脂单体的合成方法的反应路线如下:
其具体包括以下步骤:
S1、将4-环戊烯-1,3-二酮(式A,50g,520mmol)加入到二氯甲烷(1.2L)中,并用冰水浴冷却到0℃后,再加入间氯过氧苯甲酸(108g,626mmol),得到反应液;接着,将反应液升到室温搅拌反应16小时后,过滤,滤液加入饱和碳酸氢钠溶液中和,有机相用饱和食盐水清洗,分液,无水硫酸钠干燥后真空旋干得到油状的第一中间体(式B,47.3g,422mmol,收率为81.1%)。
S2、将第一中间体(式B,47.3g,422mmol)加入到3M的硫酸(500mL)中,并加热回流搅拌反应16小时后,将反应液冷却到5摄氏度,接着,在搅拌下加入碳酸钠粉末调节pH到弱碱性,然后,将溶剂旋干,取固体加入THF(500mL)搅拌,过滤除去固体,溶剂旋干得到二醇化合物(式C,40.6g,312mmol,收率为73.9%)。
S3、将二醇化合物(式C,40.6g,312mmol)加入到二氯甲烷(1.2L)后,再加入三乙胺(63g,623mmol),接着,用冰水冷却到0摄氏度后,再慢慢滴加丙烯酰氯(28.3g,313mmol),滴加结束后升到室温搅拌5小时,反应结束,加水(500mL)淬灭,水相用二氯甲烷(200mL*3)萃取,合并有机相,有机相用饱和食盐水洗涤,无水硫酸钠干燥,真空旋干得到第二中间体(式D,54.1g,294mmol,收率为94.1%)。
S4、将第二中间体(式D,10g,54mmol)加入到乙腈(200mL)中后,再加入三乙胺(11g,109mmol),并用冰水冷却到0℃,接着,慢慢加入(1-氯乙基)-环己基醚(8.9g,55mmol)的乙腈溶液(80mL),并升温至50℃进行搅拌反应12小时,然后,用冰水冷却后,再加入饱和碳酸氢钠溶液淬灭反应,再接着,浓缩除去乙腈,加入乙酸乙酯(200mL)和水(150mL),分液,水相用乙酸乙酯(100mL*3)萃取三次,合并有机相,有机相用饱和食盐水洗涤,无水硫酸钠干燥,真空旋干得到粗品,粗品蒸馏纯化得到光刻胶树脂单体(式III,13.8g,44mmol,收率为81.9%)。
实施例2
该实施例提供了一种含五元环状β-酮结构的光刻胶树脂单体,该光刻胶树脂单体的合成方法的反应路线如下:
其具体包括以下步骤:
先将上述实施例1得到的第二中间体(式D,10g,54mmol)和3,4-二氢-2H-吡喃(4.6g,55mmol)加入到乙腈(100mL)中后,再加入甲磺酸(1g,126mmol),得到反应液;接着,将反应液置于室温下搅拌反应16小时后,再加入饱和碳酸氢钠溶液淬灭反应,然后,真空浓缩除去乙腈溶剂,加水(100mL),水相用乙酸乙酯(100mL*3)萃取,合并有机相,有机相用饱和食盐水洗涤,无水硫酸钠干燥得到粗品,粗品蒸馏纯化得到光刻胶树脂单体(式IV,13.5g,50mmol,收率为92.7%)。
实施例3
该实施例提供了一种含五元环状β-酮结构的光刻胶树脂单体,该光刻胶树脂单体的合成方法的反应路线如下:
其具体包括以下步骤:
先将上述实施例1得到的第二中间体(式D,10g,54mmol)加入到乙腈(100mL)中后,再加入三乙胺(11g,109mmol),并用冰水冷却到0℃,接着,慢慢加入1-氯-1-甲氧基-2-甲基丙烷(6.7g,55mmol)的乙腈溶液(80mL),并升温至50℃进行搅拌反应12小时,然后,用冰水冷却后,再加入饱和碳酸氢钠溶液淬灭反应,再接着,浓缩除去乙腈,加入乙酸乙酯(200mL)和水(150mL),分液,水相用乙酸乙酯(100mL*3)萃取三次,合并有机相,有机相用饱和食盐水洗涤,无水硫酸钠干燥,真空旋干得到粗品,粗品蒸馏纯化得到光刻胶树脂单体(式V,12.3g,45mmol,收率为83.8%)。
实施例4
该实施例提供了一种含五元环状β-酮结构的光刻胶树脂单体,该光刻胶树脂单体的合成方法的反应路线如下:
其具体包括以下步骤:
先将上述实施例1得到的第二中间体(式D,10g,54mmol)加入到乙腈(200mL)中后,再加入三乙胺(11g,109mmol),并用冰水冷却到0℃,接着,慢慢加入1-氯甲氧基-2,2-二甲基丙烷(7.5g,55mmol)的乙腈溶液(80mL),并升温至50℃进行搅拌反应12小时,然后,用冰水冷却后,再加入饱和碳酸氢钠溶液淬灭反应,再接着,浓缩除去乙腈,加入乙酸乙酯(200mL)和水(150mL),分液,水相用乙酸乙酯(100mL*3)萃取三次,合并有机相,有机相用饱和食盐水洗涤,无水硫酸钠干燥,真空旋干得到粗品,粗品蒸馏纯化得到光刻胶树脂单体(式VI,13.4g,47mmol,收率为86.8%)。
其具体的合成方法包括以下步骤:
先将环己醇(10g,100mmol)和甲醛(4.5g,150mmol)加入到甲苯(100mL)中,并冷却到-20℃,接着,通入氯化氢气体30分钟后,再加入硫酸钠(21.3g,150mmol),得到反应液;然后,将反应液置于0℃下搅拌16小时后,过滤,滤液旋干得到(1-氯乙基)-环己基醚(13.5,83mmol,收率为83.1%)。
需要说明的是,本发明发明内容中结构式为式VII~式XIV的光刻胶树脂单体的合成路线及原理与上述实施例的相同,故可参考上述实施例进行合成,在这边就不作穷举。
以上述依据本发明的理想实施例为启示,通过上述的说明内容,相关工作人员完全可以在不偏离本项发明技术思想的范围内,进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容,必须要根据权利要求范围来确定其技术性范围。
Claims (10)
4.根据权利要求3所述的一种含五元环状β-酮结构的光刻胶树脂单体的合成方法,其特征在于,所述氧化剂为间氯过氧苯甲酸和/或过氧化氢。
5.根据权利要求3所述的一种含五元环状β-酮结构的光刻胶树脂单体的合成方法,其特征在于,所述酸/水体系中的酸为硫酸和/或三氟甲磺酸。
6.根据权利要求3所述的一种含五元环状β-酮结构的光刻胶树脂单体的合成方法,其特征在于,所述将所述第二中间体与通式为式XV的卤代物进行反应,得到通式为式I的光刻胶树脂单体的步骤,具体包括:
在碱性体系下,将所述第二中间体与通式为式XV的卤代物进行反应,得到通式为式I的光刻胶树脂单体。
7.根据权利要求3或6所述的一种含五元环状β-酮结构的光刻胶树脂单体的合成方法,其特征在于,所述碱性体系为有机碱体系;所述有机碱为三乙胺、二异丙基胺、吡啶中的一种。
8.根据权利要求3所述的一种含五元环状β-酮结构的光刻胶树脂单体的合成方法,其特征在于,所述将所述第二中间体与通式为式XVI的邻烯基环醚结构化合物进行反应,得到通式为式II的光刻胶树脂单体的步骤,具体包括:
在甲磺酸催化下,将所述第二中间体与通式为式XVI的邻烯基环醚结构化合物进行加成反应,得到通式为式II的光刻胶树脂单体。
9.根据权利要求8所述的一种含五元环状β-酮结构的光刻胶树脂单体的合成方法,其特征在于,所述通式为式XVI的邻烯基环醚结构化合物的合成方法包括以下步骤:
将通式为R4OH的化合物与通式为R2COR3的化合物在卤化氢和硫酸钠作用下进行反应,得到所述通式为式XVI的邻烯基环醚结构化合物。
10.一种如权利要求1~2中任一项所述的含五元环状β-酮结构的光刻胶树脂单体在光刻材料中的应用。
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CN115960299A (zh) * | 2021-10-12 | 2023-04-14 | 上海新阳半导体材料股份有限公司 | 一种用于制备ArF干法光刻的树脂的制备方法 |
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