CN111106804B - Millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit - Google Patents
Millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit Download PDFInfo
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- CN111106804B CN111106804B CN201911321737.2A CN201911321737A CN111106804B CN 111106804 B CN111106804 B CN 111106804B CN 201911321737 A CN201911321737 A CN 201911321737A CN 111106804 B CN111106804 B CN 111106804B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The invention discloses a millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit, which adopts a mode of combining a common-source common-gate structure and a current multiplexing structure and connects the two structures through a matching network, thereby not only effectively improving the working bandwidth of a millimeter wave amplifier, but also realizing low power consumption when amplifying signals for many times to improve the gain, particularly effectively solving the problems of abrupt drop of the gain and noise deterioration in millimeter wave frequency bands, and realizing lower power consumption when outputting power in the amplifier; the invention can integrate various excellent performances of high gain, low noise, medium power output, low power consumption, good standing wave and the like of the amplifier in an ultra-wideband millimeter wave frequency band, thereby being expected to improve the performances of electronic countermeasure equipment, a wideband high-speed communication system, a millimeter wave high-end measuring instrument and other application fields.
Description
Technical Field
The invention belongs to the technical field of microwave monolithic integrated circuits, and particularly relates to a design of a millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit.
Background
The millimeter wave low-noise discharging circuit is a front-stage circuit of the millimeter wave receiver, and the performance of the millimeter wave low-noise discharging circuit directly relates to the noise performance of the whole system and influences the sensitivity of the whole system. A millimeter wave amplifier with wide frequency band, low noise, high gain, and low power consumption at the same time is a difficulty in restricting a high-performance millimeter wave receiver system.
In order to improve the gain, the traditional circuit design method directly cascades a plurality of transistors, but the operation current of the cascade of the transistors is the sum of a plurality of transistors, so that the power consumption is larger; and the operation bandwidth of the direct cascade connection of a plurality of transistors is limited, and the high-frequency gain is difficult to improve.
Furthermore, the main obstacle in designing wideband amplifiers is the constraint of the active device gain-bandwidth product. The gain of any active device has gradually decreasing characteristics at the high frequency end, and especially in the millimeter wave frequency band, the gain decreases obviously. In addition to the decrease in forward gain S21, the increase in reverse gain S12 will cause the overall gain of the amplifier to decrease further and increase the likelihood that the device will enter an oscillating state. Meanwhile, the output power of the transistor is reduced at high frequency, so that a larger transistor is often adopted for improving the output power, and the working current of a large-size transistor is larger.
Disclosure of Invention
The invention aims to solve the problem that the conventional millimeter wave amplifier cannot have the functions of wide frequency band, low noise, high gain and low power consumption, and provides a millimeter wave ultra-wide band high-gain low-power consumption low-noise amplification chip circuit.
The technical scheme of the invention is as follows: a millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit comprises a transistor M1, a transistor M2, a transistor M3 and a transistor M4; the source electrode of the transistor M1 is connected with an M1 pipe self-bias network, the grid electrode of the transistor M1 is connected with the output end of an input matching network, and the input end of the input matching network is a radio frequency input end RFIN of a millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit; the source electrode of the transistor M2 is connected with the drain electrode of the transistor M1, the grid electrode of the transistor M2 is respectively connected with one end of a resistor Rg3 and the grid electrode radio frequency of the transistor M2 to the ground network, the other end of the resistor Rg3 is connected with a power supply VDD through a grid voltage division network of the transistor M2, the drain electrode of the transistor M2 is connected with one end of a microstrip line TL4 and is connected with the grid electrode of the transistor M1 through a negative feedback network, and the other end of the microstrip line TL4 is connected with the power supply VDD through a filtering network with a common-source common-grid structure; the source electrode of the transistor M3 is connected with the M3 tube self-bias network, the grid electrode of the transistor M3 is connected with the other end of the microstrip line TL4 through the interstage matching network, and the drain electrode of the transistor M3 is connected with the current multiplexing network; the source electrode of the transistor M4 is respectively connected with the M4 tube source electrode radio frequency to ground network and the current multiplexing network, the grid electrode of the transistor M4 tube source electrode radio frequency to ground network is respectively connected with one end of a resistor Rg6 and the current multiplexing network, the other end of the resistor Rg6 is connected with a power supply VDD through the M4 tube grid voltage division network, the drain electrode of the transistor M4 is connected with the input end of the output matching network and is connected with the power supply VDD through the current multiplexing structure filtering network, and the output end of the output matching network is the radio frequency output end RFOUT of the millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit.
Further, the input matching network includes a capacitor C1, a microstrip line TL1 and a grounded microstrip line TL2, one end of the capacitor C1 is an input end of the input matching network, the other end of the capacitor C is connected with one end of the microstrip line TL1, and the other end of the microstrip line TL1 is connected with the grounded microstrip line TL2 and is used as an output end of the input matching network.
Further, the M1 tube self-bias network includes a ground resistor Rs1 and a ground capacitor Cs1, and the ground resistor Rs1 and the ground capacitor Cs1 are connected to the source of the transistor M1.
The M2 tube grid radio frequency grounding network comprises a resistor R2 and a grounding capacitor C2, one end of the resistor R2 is connected with the grounding capacitor C2, and the other end of the resistor R2 is connected with the grid of the transistor M2.
The M2 tube grid voltage division network comprises a resistor Rg1 and a grounding resistor Rg2, one end of the resistor Rg1 is connected with a power supply VDD, and the other ends of the resistor Rg1 are respectively connected with the other ends of the grounding resistor Rg2 and the resistor Rg 3.
Further, the negative feedback network includes a resistor R1, a microstrip line TL3, and a capacitor C3, where one end of the resistor R1 is connected to the gate of the transistor M1, the other end of the resistor R is connected to one end of the microstrip line TL3, the other end of the microstrip line TL3 is connected to one end of the capacitor C3, and the other end of the capacitor C3 is connected to the drain of the transistor M2.
Further, the filtering network with the cascode structure comprises a microstrip line TL5 and a grounding capacitor C7, one end of the microstrip line TL5 is connected with the other end of the microstrip line TL4, and the other end of the microstrip line TL is respectively connected with the grounding capacitor C7 and a power supply VDD.
Further, the inter-stage matching network includes a capacitor C4, a resistor R3, and a grounding microstrip line TL6, where one end of the capacitor C4 is connected to the other end of the microstrip line TL4, the other end of the capacitor C is connected to one end of the resistor R3 and the gate of the transistor M3, and the other end of the resistor R3 is connected to the grounding microstrip line TL 6.
Further, the M3 tube self-bias network includes a ground resistor Rs2 and a ground capacitor Cs2, and the ground resistor Rs2 and the ground capacitor Cs2 are connected to the source of the transistor M3.
The source rf-to-ground network of the M4 transistor includes a grounded capacitor Cs3, and the grounded capacitor Cs3 is connected to the source of the transistor M4.
The M4 pipe grid voltage division network comprises a resistor Rg4 and a grounding resistor Rg5, one end of the resistor Rg4 is connected with a power supply VDD, and the other ends of the resistor Rg4 are respectively connected with the other ends of the grounding resistor Rg5 and the resistor Rg 6.
Further, the current multiplexing network includes a capacitor C5, a microstrip line TL7 and a microstrip line TL8, one end of the capacitor C5 is connected to the gate of the transistor M4, the other end of the capacitor C is connected to one end of the microstrip line TL7, the other end of the microstrip line TL7 is connected to the drain of the transistor M3 and one end of the microstrip line TL8, respectively, and the other end of the microstrip line TL8 is connected to the source of the transistor M4.
The current multiplexing structure filter network comprises a microstrip line TL9 and a grounding capacitor C8, one end of the microstrip line TL9 is connected with the drain electrode of the transistor M4, and the other end of the microstrip line TL is respectively connected with the grounding capacitor C8 and a power supply VDD.
Further, the output matching network includes a capacitor C6 and a microstrip line TL10, one end of the microstrip line TL10 is an input end of the output matching network, the other end of the microstrip line TL is connected with one end of the capacitor C6, and the other end of the capacitor C6 is an output end of the output matching network.
Further, the transistor M1 and the transistor M2 have the same size, and the transistor M3 and the transistor M4 have the same size.
The beneficial effects of the invention are as follows: the invention adopts a mode of combining the common-source common-gate structure and the current multiplexing structure, thereby not only effectively improving the working bandwidth of the millimeter wave amplifier, but also realizing low power consumption while amplifying signals for multiple times to improve the gain. Particularly in the millimeter wave frequency band, the problems of abrupt gain drop and noise deterioration are effectively solved, and the power output in the amplifier can be realized, and meanwhile, the power consumption is lower. The invention can integrate various excellent performances of high gain, low noise, medium power output, low power consumption, good standing wave and the like of the amplifier in an ultra-wideband millimeter wave frequency band, thereby being expected to improve the performances of electronic countermeasure equipment, a wideband high-speed communication system, a millimeter wave high-end measuring instrument and other application fields.
Drawings
Fig. 1 is a schematic diagram of a millimeter wave ultra-wideband high-gain low-power consumption low-noise amplifier chip circuit according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It is to be understood that the embodiments shown and described in the drawings are merely illustrative of the principles and spirit of the invention and are not intended to limit the scope of the invention.
The embodiment of the invention provides a millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit, which is shown in fig. 1 and comprises a transistor M1, a transistor M2, a transistor M3 and a transistor M4; the source electrode of the transistor M1 is connected with an M1 pipe self-bias network, the grid electrode of the transistor M1 is connected with the output end of an input matching network, and the input end of the input matching network is a radio frequency input end RFIN of a millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit; the source electrode of the transistor M2 is connected with the drain electrode of the transistor M1, the grid electrode of the transistor M2 is respectively connected with one end of a resistor Rg3 and the grid electrode radio frequency of the transistor M2 to the ground network, the other end of the resistor Rg3 is connected with a power supply VDD through a grid voltage division network of the transistor M2, the drain electrode of the transistor M2 is connected with one end of a microstrip line TL4 and is connected with the grid electrode of the transistor M1 through a negative feedback network, and the other end of the microstrip line TL4 is connected with the power supply VDD through a filtering network with a common-source common-grid structure; the source electrode of the transistor M3 is connected with the M3 tube self-bias network, the grid electrode of the transistor M3 is connected with the other end of the microstrip line TL4 through the interstage matching network, and the drain electrode of the transistor M3 is connected with the current multiplexing network; the source electrode of the transistor M4 is respectively connected with the M4 tube source electrode radio frequency to ground network and the current multiplexing network, the grid electrode of the transistor M4 tube source electrode radio frequency to ground network is respectively connected with one end of a resistor Rg6 and the current multiplexing network, the other end of the resistor Rg6 is connected with a power supply VDD through the M4 tube grid voltage division network, the drain electrode of the transistor M4 is connected with the input end of the output matching network and is connected with the power supply VDD through the current multiplexing structure filtering network, and the output end of the output matching network is the radio frequency output end RFOUT of the millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit.
In the embodiment of the invention, the input matching network comprises a capacitor C1, a microstrip line TL1 and a grounding microstrip line TL2, one end of the capacitor C1 is an input end of the input matching network, the other end of the capacitor C1 is connected with one end of the microstrip line TL1, and the other end of the microstrip line TL1 is connected with the grounding microstrip line TL2 and is used as an output end of the input matching network.
In the embodiment of the invention, the M1 tube self-bias network comprises a grounding resistor Rs1 and a grounding capacitor Cs1, and the grounding resistor Rs1 and the grounding capacitor Cs1 are connected with the source electrode of the transistor M1.
In the embodiment of the invention, the M2 tube grid radio frequency grounding network comprises a resistor R2 and a grounding capacitor C2, one end of the resistor R2 is connected with the grounding capacitor C2, and the other end of the resistor R2 is connected with the grid of the transistor M2.
In the embodiment of the invention, the M2 tube grid voltage division network comprises a resistor Rg1 and a grounding resistor Rg2, one end of the resistor Rg1 is connected with a power supply VDD, and the other end of the resistor Rg1 is respectively connected with the other ends of the grounding resistor Rg2 and the resistor Rg 3.
In the embodiment of the invention, the negative feedback network comprises a resistor R1, a microstrip line TL3 and a capacitor C3, wherein one end of the resistor R1 is connected with the grid electrode of the transistor M1, the other end of the resistor R1 is connected with one end of the microstrip line TL3, the other end of the microstrip line TL3 is connected with one end of the capacitor C3, and the other end of the capacitor C3 is connected with the drain electrode of the transistor M2.
In the embodiment of the invention, the filter network with the cascode structure comprises a microstrip line TL5 and a grounding capacitor C7, wherein one end of the microstrip line TL5 is connected with the other end of the microstrip line TL4, and the other end of the microstrip line TL is respectively connected with the grounding capacitor C7 and a power supply VDD.
In the embodiment of the invention, the inter-stage matching network comprises a capacitor C4, a resistor R3 and a grounding microstrip line TL6, one end of the capacitor C4 is connected with the other end of the microstrip line TL4, the other end of the capacitor C4 is respectively connected with one end of the resistor R3 and the grid electrode of the transistor M3, and the other end of the resistor R3 is connected with the grounding microstrip line TL 6.
In the embodiment of the invention, the M3 tube self-bias network comprises a grounding resistor Rs2 and a grounding capacitor Cs2, and the grounding resistor Rs2 and the grounding capacitor Cs2 are connected with the source electrode of the transistor M3.
In the embodiment of the present invention, the source rf-to-ground network of the M4 tube includes a grounded capacitor Cs3, where the grounded capacitor Cs3 is connected to the source of the transistor M4.
In the embodiment of the invention, the M4 tube grid voltage division network comprises a resistor Rg4 and a grounding resistor Rg5, one end of the resistor Rg4 is connected with a power supply VDD, and the other end of the resistor Rg4 is respectively connected with the other ends of the grounding resistor Rg5 and the resistor Rg 6.
In the embodiment of the invention, the current multiplexing network comprises a capacitor C5, a microstrip line TL7 and a microstrip line TL8, wherein one end of the capacitor C5 is connected with the gate of the transistor M4, the other end of the capacitor C is connected with one end of the microstrip line TL7, the other end of the microstrip line TL7 is respectively connected with the drain electrode of the transistor M3 and one end of the microstrip line TL8, and the other end of the microstrip line TL8 is connected with the source electrode of the transistor M4.
In the embodiment of the invention, the current multiplexing structure filter network comprises a microstrip line TL9 and a grounding capacitor C8, wherein one end of the microstrip line TL9 is connected with the drain electrode of the transistor M4, and the other end of the microstrip line TL is respectively connected with the grounding capacitor C8 and a power supply VDD.
In the embodiment of the invention, the output matching network comprises a capacitor C6 and a microstrip line TL10, one end of the microstrip line TL10 is an input end of the output matching network, the other end of the microstrip line TL is connected with one end of the capacitor C6, and the other end of the capacitor C6 is an output end of the output matching network.
In the embodiment of the invention, the working frequency band of the millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit is 20-43 GHz, the GaAs technology is adopted, the sizes of the transistor M1 and the transistor M2 are selected to be 4x 25 mu M, the sizes of the transistor M3 and the transistor M4 are selected to be 4x 35 mu M, so that the gain of the whole millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit can reach 24dB, the noise coefficient is 2.5dB@33GHz, the total frequency band of output power is more than 14dBm, and the power consumption is only 330mW.
The working principle and process of the present invention are described in detail below with reference to fig. 1:
In fig. 1, a transistor M1 and a transistor M2 form a cascode structure, wherein the transistor M1 is an amplifying transistor, the transistor M2 is a cascode transistor, and the transistors M1 and M2 are pipes with the same size. Compared with the traditional common-source structure, the common-source common-gate structure improves the output impedance matching of the amplifier, widens the frequency range, can realize higher gain and higher reverse isolation in a wider frequency range, and has lower power consumption compared with the traditional structure because the transistor M1 and the transistor M2 share one current. Placing the cascode structure before the current multiplexing structure may satisfy as optimal noise matching as possible in the choice of transistor M1 and transistor M2 dimensions.
In order to realize better bandwidth characteristics, a negative feedback network structure is introduced at the output end of the cascode structure. The output of the transistor M2 is connected with the grid electrode of the transistor M1 through a feedback loop, and the feedback resistor couples part of output signals of the drain electrode of the transistor M2 to the grid electrode of the transistor M1, so that the gain of a low-frequency end is reduced, the working bandwidth is expanded, and the feedback resistor R1 and the blocking capacitor C3 parameters determine the flatness of the gain in the band. Meanwhile, the negative feedback network structure can simplify the port matching circuit structure, reduce the matching sensitivity of the circuit input end, ensure that the port standing wave and the noise coefficient can be considered in the circuit design, and improve the circuit stability.
In fig. 1, a transistor M3 and a transistor M4 form a current multiplexing structure, and the transistor M3 and the transistor M4 use tubes having the same size. The radio frequency signal enters from the grid of the transistor M3, enters the grid of the transistor M4 through the capacitor C5 and finally flows out from the drain of the transistor M4, so that the circuit still maintains a cascading structure for the alternating current signal, and the direct current power consumption is unchanged relative to the single-stage common source circuit. In other words, the gain can be doubled under the condition that the direct current power consumption of the circuit is the same. In order to output larger power, a transistor with larger size can be used, and the working current of the current multiplexing structure is only one current, so that low power consumption can be realized.
The two structures are combined and connected through the matching network, so that the working bandwidth of the millimeter wave amplifier is effectively improved, the gain of the signal can be improved through multiple amplification, and meanwhile, the low power consumption is realized. Particularly in the millimeter wave frequency band, the problems of abrupt gain drop and noise deterioration are effectively solved, and the power output in the amplifier can be realized, and meanwhile, the power consumption is lower. The invention can integrate various excellent performances of high gain, low noise, medium power output, low power consumption, good standing wave and the like of the amplifier in an ultra-wideband millimeter wave frequency band, thereby being expected to improve the performances of electronic countermeasure equipment, a wideband high-speed communication system, a millimeter wave high-end measuring instrument and other application fields.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the spirit thereof, and such modifications and combinations remain within the scope of the present disclosure.
Claims (8)
1. The millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit is characterized by comprising a transistor M1, a transistor M2, a transistor M3 and a transistor M4; the source electrode of the transistor M1 is connected with the M1 pipe self-bias network, the grid electrode of the transistor M1 is connected with the output end of the input matching network, and the input end of the input matching network is a radio frequency input end RFIN of the millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit; the source electrode of the transistor M2 is connected with the drain electrode of the transistor M1, the grid electrode of the transistor M2 is respectively connected with one end of a resistor Rg3 and the grid electrode of the M2 tube in a radio frequency to ground network, the other end of the resistor Rg3 is connected with a power supply VDD through a grid voltage division network of the M2 tube, the drain electrode of the transistor M2 is connected with one end of a microstrip line TL4 and is connected with the grid electrode of the transistor M1 through a negative feedback network, and the other end of the microstrip line TL4 is connected with the power supply VDD through a filtering network with a common-source and common-grid structure; the source electrode of the transistor M3 is connected with the M3 tube self-bias network, the grid electrode of the transistor M3 is connected with the other end of the microstrip line TL4 through the interstage matching network, and the drain electrode of the transistor M3 is connected with the current multiplexing network; the source electrode of the transistor M4 is respectively connected with the M4 pipe source electrode radio frequency to ground network and the current multiplexing network, the grid electrode of the transistor M4 is respectively connected with one end of a resistor Rg6 and the current multiplexing network, the other end of the resistor Rg6 is connected with a power supply VDD through an M4 pipe grid voltage division network, the drain electrode of the transistor M4 is connected with the input end of an output matching network and is connected with the power supply VDD through a current multiplexing structure filtering network, and the output end of the output matching network is a radio frequency output end RFOUT of a millimeter wave ultra-wideband high gain low power consumption low noise amplification chip circuit;
The filtering network with the cascode structure comprises a microstrip line TL5 and a grounding capacitor C7, wherein one end of the microstrip line TL5 is connected with the other end of the microstrip line TL4, and the other end of the microstrip line TL is respectively connected with the grounding capacitor C7 and a power supply VDD;
The current multiplexing network comprises a capacitor C5, a microstrip line TL7 and a microstrip line TL8, wherein one end of the capacitor C5 is connected with the grid electrode of the transistor M4, the other end of the capacitor C is connected with one end of the microstrip line TL7, the other end of the microstrip line TL7 is respectively connected with the drain electrode of the transistor M3 and one end of the microstrip line TL8, and the other end of the microstrip line TL8 is connected with the source electrode of the transistor M4;
The current multiplexing structure filter network comprises a microstrip line TL9 and a grounding capacitor C8, wherein one end of the microstrip line TL9 is connected with the drain electrode of the transistor M4, and the other end of the microstrip line TL is respectively connected with the grounding capacitor C8 and a power supply VDD.
2. The millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit according to claim 1, wherein the input matching network comprises a capacitor C1, a microstrip line TL1 and a grounding microstrip line TL2, one end of the capacitor C1 is an input end of the input matching network, the other end of the capacitor C1 is connected with one end of the microstrip line TL1, and the other end of the microstrip line TL1 is connected with the grounding microstrip line TL2 and serves as an output end of the input matching network.
3. The millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit according to claim 1, wherein the M1 tube self-bias network comprises a grounding resistor Rs1 and a grounding capacitor Cs1, and the grounding resistor Rs1 and the grounding capacitor Cs1 are connected with a source electrode of a transistor M1;
the M2 tube grid radio frequency grounding network comprises a resistor R2 and a grounding capacitor C2, one end of the resistor R2 is connected with the grounding capacitor C2, and the other end of the resistor R2 is connected with the grid of the transistor M2;
The M2 tube grid voltage division network comprises a resistor Rg1 and a grounding resistor Rg2, one end of the resistor Rg1 is connected with a power supply VDD, and the other end of the resistor Rg1 is connected with the other ends of the grounding resistor Rg2 and the resistor Rg3 respectively.
4. The millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit according to claim 1, wherein the negative feedback network comprises a resistor R1, a microstrip line TL3 and a capacitor C3, one end of the resistor R1 is connected with a gate of the transistor M1, the other end of the resistor R is connected with one end of the microstrip line TL3, the other end of the microstrip line TL3 is connected with one end of the capacitor C3, and the other end of the capacitor C3 is connected with a drain of the transistor M2.
5. The millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit according to claim 1, wherein the inter-stage matching network comprises a capacitor C4, a resistor R3 and a grounding microstrip line TL6, one end of the capacitor C4 is connected with the other end of the microstrip line TL4, the other end of the capacitor C4 is respectively connected with one end of the resistor R3 and a gate of the transistor M3, and the other end of the resistor R3 is connected with the grounding microstrip line TL 6.
6. The millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit according to claim 1, wherein the M3 tube self-bias network comprises a grounding resistor Rs2 and a grounding capacitor Cs2, and the grounding resistor Rs2 and the grounding capacitor Cs2 are both connected with a source electrode of a transistor M3;
The source electrode of the M4 tube is connected with the radio frequency grounding network and comprises a grounding capacitor Cs3, and the grounding capacitor Cs3 is connected with the source electrode of the transistor M4;
The M4 tube grid voltage division network comprises a resistor Rg4 and a grounding resistor Rg5, one end of the resistor Rg4 is connected with a power supply VDD, and the other end of the resistor Rg4 is connected with the other ends of the grounding resistor Rg5 and the resistor Rg6 respectively.
7. The millimeter wave ultra-wideband high-gain low-power consumption low-noise amplification chip circuit according to claim 1, wherein the output matching network comprises a capacitor C6 and a microstrip line TL10, one end of the microstrip line TL10 is an input end of the output matching network, the other end of the microstrip line TL is connected with one end of the capacitor C6, and the other end of the capacitor C6 is an output end of the output matching network.
8. The millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit according to any one of claims 1-7, wherein said transistor M1 and said transistor M2 have the same size, and said transistor M3 and said transistor M4 have the same size.
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| CN111600553A (en) * | 2020-05-28 | 2020-08-28 | 成都嘉纳海威科技有限责任公司 | A Microwave Monolithic Integrated Ultra-Broadband Power Amplifier |
| CN111817670B (en) * | 2020-06-30 | 2024-12-27 | 成都嘉纳海威科技有限责任公司 | A C-band ultra-wideband high-gain low-noise amplifier chip |
| CN112290894B (en) * | 2020-11-11 | 2021-07-16 | 华南理工大学 | A high-performance millimeter-wave low-noise composite amplifier |
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| CN108649911B (en) * | 2018-06-15 | 2023-10-27 | 成都嘉纳海威科技有限责任公司 | Millimeter wave broadband high-efficiency transistor stacking power amplifier |
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