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CN111057547B - A kind of silicon carbide modified YAG:Ce phosphor and preparation method thereof - Google Patents

A kind of silicon carbide modified YAG:Ce phosphor and preparation method thereof Download PDF

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CN111057547B
CN111057547B CN201911373621.3A CN201911373621A CN111057547B CN 111057547 B CN111057547 B CN 111057547B CN 201911373621 A CN201911373621 A CN 201911373621A CN 111057547 B CN111057547 B CN 111057547B
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王晓君
谷池
张长华
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Jiangsu Normal University
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Abstract

The invention discloses silicon carbide modified YAG-Ce fluorescent powder and a preparation method thereof. The chemical general formula of the fluorescent powder is Y 3‑ x Al 5 O 12 xCe, ySiC, where 0<x≤0.09,0<y is less than or equal to 0.05; ce fluorescence of YAG modified by silicon carbideThe powder emits yellow fluorescence with the dominant wavelength of 556 +/-2 nm under the excitation of blue light of 460 nm. Compared with the prior art, the invention improves the thermal stability of the YAG-Ce fluorescent powder while ensuring red shift of the emission spectrum and higher luminous efficiency.

Description

一种碳化硅改性的YAG:Ce荧光粉及其制备方法A kind of silicon carbide modified YAG:Ce phosphor and preparation method thereof

技术领域technical field

本发明属于无机发光材料领域,涉及一种碳化硅改性的YAG:Ce荧光粉及其制备方法。The invention belongs to the field of inorganic light-emitting materials, and relates to a silicon carbide modified YAG:Ce phosphor and a preparation method thereof.

背景技术Background technique

随着能源问题的不断加剧,节能环保已成为世界各国发展的主题之一。白光发光二极管(Light Emitting Diode,简称 LED)具有能耗低、效率高、无污染、寿命长等特点,在固态照明、液晶背光源、汽车前照灯等领域具有十分广阔的应用前景。With the continuous intensification of energy problems, energy conservation and environmental protection have become one of the themes of development in countries around the world. Light Emitting Diode (LED for short) has the characteristics of low energy consumption, high efficiency, no pollution, long life, etc.

目前市场上使用最普遍的白光LED是荧光粉转换型白光LED,通过在LED芯片表面涂覆荧光粉层获得白光,因此荧光粉的性能对白光LED器件的性能起关键作用。黄色YAG:Ce荧光粉由于具有发光效率高、物理和化学性质稳定、制备工艺简单等优点,被广泛应用于白光LED器件。但是,YAG:Ce荧光粉也有一些不足,如发射光谱中缺少红光成分,导致白光LED光源的色温偏高、显色指数偏低;另外,其发光效率及热稳定性还有提高的空间。因此,对YAG:Ce荧光粉的改性研究具有重要实用价值。The most commonly used white light LED on the market is phosphor-converted white light LED. White light is obtained by coating a phosphor layer on the surface of the LED chip. Therefore, the performance of the phosphor plays a key role in the performance of the white light LED device. Yellow YAG:Ce phosphors are widely used in white LED devices due to their high luminous efficiency, stable physical and chemical properties, and simple preparation process. However, YAG:Ce phosphors also have some shortcomings, such as the lack of red light components in the emission spectrum, which leads to high color temperature and low color rendering index of white LED light sources; in addition, its luminous efficiency and thermal stability still have room for improvement. Therefore, research on the modification of YAG:Ce phosphors has important practical value.

近年来,许多研究人员开展了通过添加Si的化合物(Si3N4、SiO2等)对YAG:Ce改性的研究。以加入Si3N4为例,该方法能够有效地使YAG:Ce荧光粉的发射光谱红移,但同时伴随着热稳定性和发光效率大幅度下降的问题,这对白光LED光源是不利的,尤其是对大功率白光LED光源。那么添加SiC对YAG:Ce荧光粉的发光性能有何影响,目前还没有该方面的研究报道。In recent years, many researchers have carried out research on YAG:Ce modification by adding Si compounds (Si 3 N 4 , SiO2, etc.). Taking the addition of Si 3 N 4 as an example, this method can effectively red-shift the emission spectrum of YAG:Ce phosphors, but at the same time, it is accompanied by the problems of thermal stability and luminous efficiency, which is unfavorable for white LED light sources. , especially for high-power white LED light sources. So what effect does the addition of SiC have on the luminescence properties of YAG:Ce phosphors? There is no research report on this aspect.

发明内容SUMMARY OF THE INVENTION

本发明的目的在于对YAG:Ce进行改性研究,在使其发射光谱产生红移的同时,提高其热稳定性并保持较高的发光效率。为了实现上述目的,本发明提供一种碳化硅改性的YAG:Ce荧光粉及其制备方法。The purpose of the present invention is to carry out modification research on YAG:Ce to improve its thermal stability and maintain high luminous efficiency while red-shifting its emission spectrum. In order to achieve the above purpose, the present invention provides a silicon carbide modified YAG:Ce phosphor and a preparation method thereof.

一种碳化硅改性的YAG:Ce荧光粉,其化学通式为Y3-xAl5O12:xCe,ySiC,其中0<x≤0.09,0 <y≤0.05;所述碳化硅改性的YAG:Ce荧光粉在460 nm的蓝光激发下,发射出主波长为556±2 nm的黄色荧光。A silicon carbide modified YAG:Ce phosphor, the general chemical formula of which is Y 3-x Al 5 O 12 :xCe,ySiC, wherein 0<x≤0.09, 0<y≤0.05; the silicon carbide modified The YAG:Ce phosphor emits yellow fluorescence with a dominant wavelength of 556±2 nm when excited by blue light at 460 nm.

上述碳化硅改性的YAG:Ce荧光粉的制备方法,包括以下步骤:The preparation method of the above-mentioned silicon carbide modified YAG:Ce phosphor, comprises the following steps:

步骤1,根据化学通式Y3-xAl5O12:xCe,ySiC中各元素的化学计量比,分别称取Y2O3、Al2O3、CeO2、纳米SiC,其中0<x≤0.09,0<y≤0.05,采用行星式球磨机球磨10-20 h,得前驱体混合物;Step 1, according to the chemical formula Y 3-x Al 5 O 12 :xCe, the stoichiometric ratio of each element in ySiC, respectively weigh Y 2 O 3 , Al 2 O 3 , CeO 2 , nano-SiC, where 0<x ≤0.09, 0<y≤0.05, use a planetary ball mill for 10-20 h to obtain the precursor mixture;

步骤2,将前驱体混合物装入高纯氧化铝坩埚内,再将高纯氧化铝坩埚置于高温管状炉中,在还原性气氛下,1400-1600 ℃,保温3-8 h,升温速率为300-600 ℃/h,合成的荧光粉随炉体自然冷却;Step 2, put the precursor mixture into a high-purity alumina crucible, and then place the high-purity alumina crucible in a high-temperature tubular furnace, in a reducing atmosphere, at 1400-1600 °C, and keep it for 3-8 h, and the heating rate is 300-600 ℃/h, the synthesized phosphor cools naturally with the furnace body;

步骤3,取出合成的荧光粉,放入盛有去离子水的烧杯中,加入质量分数为36%-38%的浓盐酸,其中去离子水与浓盐酸的体积比为10:1,在100 ℃条件下搅拌10-60 min,静置分层,滤掉上层澄清液后,用去离子水、乙醇清洗沉淀后,放入干燥箱中,在70 ℃下保温10-20 h,得到碳化硅改性的YAG:Ce荧光粉。Step 3, take out the synthesized phosphor, put it into a beaker filled with deionized water, add concentrated hydrochloric acid with a mass fraction of 36%-38%, wherein the volume ratio of deionized water and concentrated hydrochloric acid is 10:1, and at 100 Stir at ℃ for 10-60 min, stand for stratification, filter out the supernatant liquid, wash the precipitate with deionized water and ethanol, put it in a drying oven, and keep it at 70 ℃ for 10-20 h to obtain silicon carbide Modified YAG:Ce phosphor.

作为改进的是,步骤1中所述SiC为高纯度纳米SiC,其纯度为99.9 %,粒径大小约40 nm。As an improvement, the SiC described in step 1 is high-purity nano-SiC with a purity of 99.9% and a particle size of about 40 nm.

作为改进的是,步骤2中所述还原性气氛为H2/N2或H2/Ar。As an improvement, the reducing atmosphere in step 2 is H 2 /N 2 or H 2 /Ar.

有益效果:Beneficial effects:

与现有技术相比,本发明的优势如下:Compared with the prior art, the advantages of the present invention are as follows:

(1)首次研究了SiC对YAG:Ce荧光粉发光性能的影响;(1) The effect of SiC on the luminescence properties of YAG:Ce phosphors was studied for the first time;

(2)改性后的荧光粉,在发射光谱红移的同时,具有更高的热稳定性,并保持了较高的发光效率。(2) The modified phosphor has higher thermal stability and maintains higher luminous efficiency while the emission spectrum is red-shifted.

附图说明Description of drawings

图1为本发明中对比例1和实施例2合成的荧光粉的XRD图;Fig. 1 is the XRD pattern of the phosphor powder synthesized by Comparative Example 1 and Example 2 in the present invention;

图2为本发明中对比例1和实施例2合成的荧光粉的扫描电镜照片,(a)为对比例1,(b)为实施例2;2 is a scanning electron microscope photograph of phosphors synthesized in Comparative Example 1 and Example 2 in the present invention, (a) is Comparative Example 1, and (b) is Example 2;

图3为本发明中对比例1和实施例2合成的荧光粉的发射光谱;Fig. 3 is the emission spectrum of the phosphor powder synthesized by Comparative Example 1 and Example 2 in the present invention;

图4为本发明中对比例1和实施例3合成的荧光粉的热稳定性曲线。4 is a thermal stability curve of the phosphors synthesized in Comparative Example 1 and Example 3 of the present invention.

具体实施方式Detailed ways

下面结合附图和具体实施例对本发明作进一步详细说明。The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

对比例1:Y2.925Al5O12:0.075CeComparative Example 1: Y 2.925 Al 5 O 12 : 0.075Ce

(1)设定目标产物Y2.925Al5O12:0.075Ce质量为20 g,按照Y:Al:Ce的物质的量之比为2.925:5:0.075的比例分别称取Y2O3(99.99%)、Al2O3(99.99%)、CeO2(99.99%)原料,采用行星式球磨机球磨10-20 h得到前驱体混合物;(1) Set the mass of the target product Y 2.925 Al 5 O 12 : 0.075Ce to 20 g, and weigh Y 2 O 3 (99.99 %), Al 2 O 3 (99.99%), CeO 2 (99.99%) raw materials, and the precursor mixture was obtained by ball milling with a planetary ball mill for 10-20 h;

(2)将步骤(1)得到的前驱体混合物装入高纯氧化铝坩埚内,然后置于高温管状炉中,在还原性气氛下,1500 ℃,保温5 h,升温速率为600 ℃/h,合成的荧光粉随炉体自然冷却;(2) Put the precursor mixture obtained in step (1) into a high-purity alumina crucible, and then place it in a high-temperature tubular furnace, in a reducing atmosphere, at 1500 °C for 5 h, and the heating rate is 600 °C/h , the synthesized phosphor cools naturally with the furnace body;

(3)取出步骤(2)合成的荧光粉,放入盛有去离子水的烧杯中,加入质量分数为36%-38%的浓盐酸,其中去离子水与浓盐酸的体积比为10:1,在100 ℃条件下搅拌20 min,静置分层,滤掉上层澄清液后,用去离子水、乙醇清洗后,放入干燥箱中,在70 ℃下保温10h,得到YAG:Ce荧光粉。(3) Take out the phosphor powder synthesized in step (2), put it into a beaker filled with deionized water, and add concentrated hydrochloric acid whose mass fraction is 36%-38%, wherein the volume ratio of deionized water and concentrated hydrochloric acid is 10: 1. Stir at 100 °C for 20 min, let stand for stratification, filter out the supernatant liquid, wash with deionized water and ethanol, put it in a drying box, and keep at 70 °C for 10 h to obtain YAG:Ce fluorescence pink.

实施例1:Y2.925Al5O12:0.075Ce,0.01SiCExample 1: Y 2.925 Al 5 O 12 : 0.075Ce, 0.01SiC

(1)设定目标产物Y2.925Al5O12:0.075Ce,0.01SiC质量为20 g,按照Y:Al:Ce:Si的物质的量之比为2.925:5:0.075:0.01的比例分别称取Y2O3(99.99%)、Al2O3(99.99%)、CeO2(99.99%)、SiC(99.9%)原料,采用行星式球磨机球磨10-20 h;(1) Set the target product Y 2.925 Al 5 O 12 : 0.075Ce, the mass of 0.01SiC is 20 g, and the ratio of the amount of Y:Al:Ce:Si is 2.925:5:0.075:0.01, respectively. Take Y 2 O 3 (99.99%), Al 2 O 3 (99.99%), CeO 2 (99.99%), SiC (99.9%) raw materials, and use a planetary ball mill for 10-20 h;

(2)将步骤(1)得到的前驱体混合物装入高纯氧化铝坩埚内,然后置于高温管状炉中,在还原性气氛下,1500 ℃,保温5 h,升温速率为600 ℃/h,合成的荧光粉随炉体自然冷却;(2) Put the precursor mixture obtained in step (1) into a high-purity alumina crucible, and then place it in a high-temperature tubular furnace, in a reducing atmosphere, at 1500 °C for 5 h, and the heating rate is 600 °C/h , the synthesized phosphor cools naturally with the furnace body;

(3)取出步骤(2)合成的荧光粉,放入盛有去离子水的烧杯中,加入质量分数为36%-38%的浓盐酸,其中去离子水与浓盐酸的体积比为10:1,在100 ℃条件下搅拌20 min,静置分层,滤掉上层澄清液后,用去离子水、乙醇清洗后,放入干燥箱中,在70℃下保温10h,得到碳化硅改性的YAG:Ce荧光粉。(3) Take out the phosphor powder synthesized in step (2), put it into a beaker filled with deionized water, and add concentrated hydrochloric acid whose mass fraction is 36%-38%, wherein the volume ratio of deionized water and concentrated hydrochloric acid is 10: 1. Stir at 100 °C for 20 min, stand for stratification, filter out the upper clarified liquid, wash with deionized water and ethanol, put it in a drying box, and keep at 70 °C for 10 h to obtain modified silicon carbide. of YAG:Ce phosphors.

实施例2:Y2.925Al5O12:0.075Ce,0.03SiCExample 2: Y 2.925 Al 5 O 12 : 0.075Ce, 0.03SiC

(1)设定目标产物Y2.925Al5O12:0.075Ce,0.03SiC质量为20 g,按照Y:Al:Ce:Si的物质的量之比为2.925:5:0.075:0.03的比例分别称取Y2O3(99.99%)、Al2O3(99.99%)、CeO2(99.99%)、SiC(99.9%)原料,采用行星式球磨机球磨10-20 h;(1) Set the target product Y 2.925 Al 5 O 12 : 0.075Ce, the mass of 0.03SiC is 20 g, and the ratio of the amount of Y:Al:Ce:Si is 2.925:5:0.075:0.03, respectively. Take Y 2 O 3 (99.99%), Al 2 O 3 (99.99%), CeO 2 (99.99%), SiC (99.9%) raw materials, and use a planetary ball mill for 10-20 h;

(2)将步骤(1)得到的前驱体混合物装入高纯氧化铝坩埚内,然后置于高温管状炉中,在还原性气氛下,1500 ℃,保温5 h,升温速率为600 ℃/h,合成的荧光粉随炉体自然冷却;(2) Put the precursor mixture obtained in step (1) into a high-purity alumina crucible, and then place it in a high-temperature tubular furnace, in a reducing atmosphere, at 1500 °C for 5 h, and the heating rate is 600 °C/h , the synthesized phosphor cools naturally with the furnace body;

(3)取出步骤(2)合成的荧光粉,放入盛有去离子水的烧杯中,加入质量分数为36%-38%的浓盐酸,其中去离子水与浓盐酸的体积比为10:1,在100 ℃条件下搅拌20 min,静置分层,滤掉上层澄清液后,用去离子水、乙醇清洗后,放入干燥箱中,在70 ℃下保温10h,得到碳化硅改性的YAG:Ce荧光粉。(3) Take out the phosphor powder synthesized in step (2), put it into a beaker filled with deionized water, and add concentrated hydrochloric acid whose mass fraction is 36%-38%, wherein the volume ratio of deionized water and concentrated hydrochloric acid is 10: 1. Stir at 100 °C for 20 min, stand for stratification, filter out the upper clarified liquid, wash with deionized water and ethanol, put it in a drying box, and keep at 70 °C for 10 h to obtain modified silicon carbide. of YAG:Ce phosphors.

实施例3:Y2.925Al5O12:0.075Ce,0.05SiCExample 3: Y 2.925 Al 5 O 12 : 0.075Ce, 0.05SiC

(1)设定目标产物Y2.925Al5O12:0.075Ce,0.05SiC质量为20 g,按照Y:Al:Ce:Si的物质的量之比为2.925:5:0.075:0.05的比例分别称取Y2O3(99.99%)、Al2O3(99.99%)、CeO2(99.99%)、SiC(99.9%)原料,采用行星式球磨机球磨10-20 h;(1) Set the target product Y 2.925 Al 5 O 12 : 0.075Ce, the mass of 0.05SiC is 20 g, and the ratio of the amount of Y:Al:Ce:Si is 2.925:5:0.075:0.05, respectively. Take Y 2 O 3 (99.99%), Al 2 O 3 (99.99%), CeO 2 (99.99%), SiC (99.9%) raw materials, and use a planetary ball mill for 10-20 h;

(2)将步骤(1)得到的前驱体混合物装入高纯氧化铝坩埚内,然后置于高温管状炉中,在还原性气氛下,1500 ℃,保温5 h,升温速率为600 ℃/h,合成的荧光粉随炉体自然冷却;(2) Put the precursor mixture obtained in step (1) into a high-purity alumina crucible, and then place it in a high-temperature tubular furnace, in a reducing atmosphere, at 1500 °C for 5 h, and the heating rate is 600 °C/h , the synthesized phosphor cools naturally with the furnace body;

(3)取出步骤(2)合成的荧光粉,放入盛有去离子水的烧杯中,加入质量分数为36%-38%的浓盐酸,其中去离子水与浓盐酸的体积比为10:1,在100 ℃条件下搅拌20 min,静置分层,滤掉上层澄清液后,用去离子水、乙醇清洗后,放入干燥箱中,在70 ℃下保温10h,得到碳化硅改性的YAG:Ce荧光粉。(3) Take out the phosphor powder synthesized in step (2), put it into a beaker filled with deionized water, and add concentrated hydrochloric acid whose mass fraction is 36%-38%, wherein the volume ratio of deionized water and concentrated hydrochloric acid is 10: 1. Stir at 100 °C for 20 min, stand for stratification, filter out the upper clarified liquid, wash with deionized water and ethanol, put it in a drying box, and keep at 70 °C for 10 h to obtain modified silicon carbide. of YAG:Ce phosphors.

实施例4:Y2.985Al5O12:0.015Ce,0.03SiCExample 4: Y 2.985 Al 5 O 12 : 0.015Ce, 0.03SiC

(1)设定目标产物Y2.985Al5O12:0.015Ce,0.03SiC质量为20 g,按照Y:Al:Ce:Si的物质的量之比为2.985:5:0.015:0.03的比例分别称取Y2O3(99.99%)、Al2O3(99.99%)、CeO2(99.99%)、SiC(99.9%)原料,采用行星式球磨机球磨10-20 h;(1) Set the target product Y 2.985 Al 5 O 12 : 0.015Ce, the mass of 0.03SiC is 20 g, and the ratio of the amount of Y:Al:Ce:Si is 2.985:5:0.015:0.03, respectively. Take Y 2 O 3 (99.99%), Al 2 O 3 (99.99%), CeO 2 (99.99%), SiC (99.9%) raw materials, and use a planetary ball mill for 10-20 h;

(2)将步骤(1)得到的前驱体混合物装入高纯氧化铝坩埚内,然后置于高温管状炉中,在还原性气氛下,1500 ℃,保温5 h,升温速率为600 ℃/h,合成的荧光粉随炉体自然冷却;(2) Put the precursor mixture obtained in step (1) into a high-purity alumina crucible, and then place it in a high-temperature tubular furnace, in a reducing atmosphere, at 1500 °C for 5 h, and the heating rate is 600 °C/h , the synthesized phosphor cools naturally with the furnace body;

(3)取出步骤(2)合成的荧光粉,放入盛有去离子水的烧杯中,加入质量分数为36%-38%的浓盐酸,其中去离子水与浓盐酸的体积比为10:1,在100 ℃条件下搅拌20 min,静置分层,滤掉上层澄清液后,用去离子水、乙醇清洗后,放入干燥箱中,在70 ℃下保温10h,得到碳化硅改性的YAG:Ce荧光粉。(3) Take out the phosphor powder synthesized in step (2), put it into a beaker filled with deionized water, and add concentrated hydrochloric acid whose mass fraction is 36%-38%, wherein the volume ratio of deionized water and concentrated hydrochloric acid is 10: 1. Stir at 100 °C for 20 min, stand for stratification, filter out the upper clarified liquid, wash with deionized water and ethanol, put it in a drying box, and keep at 70 °C for 10 h to obtain modified silicon carbide. of YAG:Ce phosphors.

实施例5:Y2.91Al5O12:0.09Ce,0.03SiCExample 5: Y 2.91 Al 5 O 12 : 0.09Ce, 0.03SiC

(1)设定目标产物Y2.91Al5O12:0.09Ce,0.03SiC质量为20 g,按照Y:Al:Ce:Si的物质的量之比为2.91:5:0.09:0.03的比例分别称取Y2O3(99.99%)、Al2O3(99.99%)、CeO2(99.99%)、SiC(99.9%)原料,采用行星式球磨机球磨10-20 h;(1) Set the target product Y 2.91 Al 5 O 12 : 0.09Ce, the mass of 0.03SiC is 20 g, and the ratio of the amount of Y:Al:Ce:Si is 2.91:5:0.09:0.03, respectively. Take Y 2 O 3 (99.99%), Al 2 O 3 (99.99%), CeO 2 (99.99%), SiC (99.9%) raw materials, and use a planetary ball mill for 10-20 h;

(2)将步骤(1)得到的前驱体混合物装入高纯氧化铝坩埚内,然后置于高温管状炉中,在还原性气氛下,1500 ℃,保温5 h,升温速率为600 ℃/h,合成的荧光粉随炉体自然冷却;(2) Put the precursor mixture obtained in step (1) into a high-purity alumina crucible, and then place it in a high-temperature tubular furnace, in a reducing atmosphere, at 1500 °C for 5 h, and the heating rate is 600 °C/h , the synthesized phosphor cools naturally with the furnace body;

(3)取出步骤(2)合成的荧光粉,放入盛有去离子水的烧杯中,加入质量分数为36%-38%的浓盐酸,其中去离子水与浓盐酸的体积比为10:1,在100 ℃条件下搅拌20 min,静置分层,滤掉上层澄清液后,用去离子水、乙醇清洗后,放入干燥箱中,在70 ℃下保温10h,得到碳化硅改性的YAG:Ce荧光粉。(3) Take out the phosphor powder synthesized in step (2), put it into a beaker filled with deionized water, and add concentrated hydrochloric acid whose mass fraction is 36%-38%, wherein the volume ratio of deionized water and concentrated hydrochloric acid is 10: 1. Stir at 100 °C for 20 min, stand for stratification, filter out the upper clarified liquid, wash with deionized water and ethanol, put it in a drying box, and keep at 70 °C for 10 h to obtain modified silicon carbide. of YAG:Ce phosphors.

对比例1、实施例2中样品的XRD见图1。由图可见,添加SiC后,材料的结构仍然是石榴石结构,仍可得到纯相的YAG:Ce荧光粉。Figure 1 shows the XRD of the samples in Comparative Example 1 and Example 2. It can be seen from the figure that after adding SiC, the structure of the material is still a garnet structure, and a pure-phase YAG:Ce phosphor can still be obtained.

对比例1和实施例2中样品的扫描电镜照片见图2。由图可见,合成的YAG:Ce荧光粉的形貌呈近球形,具有较好的分散性;另外,添加SiC后,YAG:Ce荧光粉的粒径大小明显下降。The SEM photographs of the samples in Comparative Example 1 and Example 2 are shown in Figure 2 . It can be seen from the figure that the morphology of the synthesized YAG:Ce phosphor is nearly spherical and has good dispersibility; in addition, after adding SiC, the particle size of the YAG:Ce phosphor decreases significantly.

对比例1和实施例2中样品的发射光谱见图3。由图可见,其发射光谱发生明显的红移,增加了发射光谱中的红光成分;并且基本保持了原来的发光强度。The emission spectra of the samples in Comparative Example 1 and Example 2 are shown in Figure 3 . It can be seen from the figure that the emission spectrum has an obvious red shift, which increases the red light component in the emission spectrum; and basically maintains the original luminous intensity.

对比例1和实施例3中样品的热稳定性曲线见图4。由图可见,改性后的荧光粉加热到150℃时,其荧光强度为室温时荧光强度的94.5%,远远高于未改性的荧光粉(150℃,88.2%),表明改性后的YAG:Ce荧光粉具有更高的热稳定性。The thermal stability curves of the samples in Comparative Example 1 and Example 3 are shown in Figure 4 . It can be seen from the figure that when the modified phosphor is heated to 150 °C, its fluorescence intensity is 94.5% of the fluorescence intensity at room temperature, which is much higher than that of the unmodified phosphor (150 °C, 88.2%), indicating that after modification. The YAG:Ce phosphors have higher thermal stability.

Claims (4)

1. The YAG Ce phosphor modified by silicon carbide is characterized in that the chemical general formula is Y 3-x Al 5 O 12 xCe, ySiC, where 0<x≤0.09,0<y is less than or equal to 0.05; the silicon carbide modified YAG-Ce fluorescent powder emits yellow fluorescent light with the dominant wavelength of 556 +/-2 nm under the excitation of 460 nm blue light.
2. The preparation method of the silicon carbide modified YAG Ce phosphor based on claim 1 is characterized by comprising the following steps: step 1, according to a chemical general formula Y 3-x Al 5 O 12 Respectively weighing Y according to the stoichiometric ratio of each element in xCe and ySiC 2 O 3 、Al 2 O 3 、CeO 2 Nano SiC of which 0<x≤0.09,0<y is less than or equal to 0.05, and a planetary ball mill is adopted for ball milling for 10-20 h to obtain a precursor mixture; step 2, putting the precursor mixture into a high-purity alumina crucible, then placing the high-purity alumina crucible into a high-temperature tubular furnace, preserving the heat for 3-8 h at 1400-1600 ℃ in a reducing atmosphere at the heating rate of 300-600 ℃/h, and naturally cooling the synthesized fluorescent powder along with the furnace body; step 3, taking out the synthesized fluorescent powder, and putting the fluorescent powder into a beaker filled with deionized waterAdding concentrated hydrochloric acid with the mass fraction of 36-38%, wherein the volume ratio of deionized water to concentrated hydrochloric acid is 10:1, stirring for 10-60 min at 100 ℃, standing for layering, filtering out supernatant, washing and precipitating with deionized water and ethanol, placing into a drying box, and preserving heat at 70 ℃ for 10-20 h to obtain the silicon carbide modified YAG: Ce fluorescent powder.
3. The method for preparing Ce phosphor of YAG modified by SiC according to claim 2, wherein the SiC in step 1 is high purity nano SiC with purity of 99.9% and particle size of 40 nm.
4. The method for preparing Ce doped YAG phosphor modified by SiC as claimed in claim 2, wherein the reducing atmosphere in step 2 is H 2 /N 2 Or H 2 /Ar。
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