CN111029448B - A kind of near-ultraviolet LED using MOCVD technology and preparation method thereof - Google Patents
A kind of near-ultraviolet LED using MOCVD technology and preparation method thereof Download PDFInfo
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Abstract
本发明提供了一种采用MOCVD技术的近紫外LED及其制备方法，涉及半导体技术领域。近紫外LED包括衬底和在所述衬底上依次生长的缓冲层、高温层、n型AlmGa1－mN层、发光有源区、p型电子阻挡层、p型AlnGa1－nN层和接触层，其中，所述发光有源区的材料包括InxGa1－xN和AlyGa1－yN，所述p型电子阻挡层的材料包括Aly1Inx1Ga1－y1－x1N，0.001≤x＜y≤1，y，m，n均小于y1。近紫外LED能有效地增加电子限制效果和空穴注入效率，从而提高器件的量子效率和发光效率。
The invention provides a near-ultraviolet LED using MOCVD technology and a preparation method thereof, and relates to the technical field of semiconductors. The near-ultraviolet LED includes a substrate and a buffer layer, a high temperature layer, an n-type AlmGa1 - mN layer, a light-emitting active region, a p-type electron blocking layer, and a p-type AlnGa1 grown on the substrate in sequence -n N layer and contact layer, wherein the material of the light-emitting active region includes InxGa1 - xN and AlyGa1 -yN , and the material of the p-type electron blocking layer includes Aly1Inx1Ga 1-y1-x1 N, 0.001≤x<y≤1, y, m, n are all less than y1. Near-ultraviolet LEDs can effectively increase the electron confinement effect and hole injection efficiency, thereby improving the quantum efficiency and luminous efficiency of the device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a near ultraviolet LED adopting MOCVD technology and a preparation method thereof.
Background
In recent years, LEDs have experienced an unusually rapid development. The theoretical maximum efficiency of white light LEDs is reported to be as high as 400lm/W, far exceeding that of traditional lighting fixtures (incandescent lamps, fluorescent lamps, etc.). Although GaN-based LEDs have been well developed, there is still much room for development compared to their theoretical maximum efficiency. One key factor limiting the light emitting efficiency of GaN-based LEDs is that electron hole injection mismatch under high current conditions results in electron current leakage, i.e., some electrons cannot be sufficiently recombined in the light emitting active region to emit light, but leak from the active region to the p-type region, resulting in lower quantum efficiency and light emitting efficiency of the device.
Therefore, designing a near ultraviolet LED and a method for manufacturing the same can effectively increase the electron confinement effect and the hole injection efficiency, thereby improving the quantum efficiency and the light emitting efficiency of the device, which is a technical problem that needs to be solved urgently at present.
Disclosure of Invention
The invention aims to provide a near ultraviolet LED adopting MOCVD technology and a preparation method thereof, which can effectively increase the electron confinement effect and the hole injection efficiency, thereby improving the quantum efficiency and the luminous efficiency of the device.
In a first aspect, the invention provides a near ultraviolet LED using MOCVD technology, comprising a substrate, and a buffer layer, a high temperature layer, and n-type Al sequentially grown on the substratemGa1－mN layer, light emitting active region, p-type electron blocking layer, and p-type AlnGa1－nAn N layer and a contact layer, wherein the material of the light emitting active region comprises InxGa1－xN and AlyGa1－yN, the material of the p-type electron blocking layer comprises Aly1Inx1Ga1－y1－x1X is more than or equal to 0.001 and less than or equal to 1, and y, m and N are all less than y 1.
In the first embodiment based on the first aspect, the Al composition value y1 remains unchanged, the In composition value x1 decreases and then increases, and the Ga composition value (1-y 1-x 1) increases and then decreases along the growth direction of the p-type electron blocking layer 160.
In a second embodiment based on the first embodiment of the first aspect, the In composition value x1 is graded In a V-shape and the Ga composition value (1-y 1-x 1) is graded In an inverted V-shape along the growth direction of the p-type electron blocking layer 160.
In a third example based on the first example or the second example of the first aspect, the Ga component value (1-y 1-x 1) is highest at a position where the In component value x1 is lowest In the p-type electron blocking layer.
In a fourth embodiment based on the first aspect, in the p-type electron blocking layer, the Mg doping concentration is V-shaped or inverted V-shaped or constant in the direction from the edge to the middle.
In a second aspect, the present invention provides a method for preparing a near ultraviolet LED using MOCVD, including:
sequentially growing a buffer layer, a high-temperature layer and n-type Al on a substratemGa1－mN layer, light emitting active region, wherein the material of the light emitting active region comprises InxGa1－xN and AlyGa1－yN；
Growing a p-type electron blocking layer and p-type Al on the light-emitting active regionnGa1－nAn N layer and a contact layer, wherein the material of the p-type electron blocking layer comprises Aly1Inx1Ga1－y1－x1N；
Wherein x is more than or equal to 0.001 and less than or equal to 1, and y, m and n are all less than y 1.
In the first embodiment according to the second aspect, the Al composition value y1 is kept constant, the In composition value x1 is decreased and then increased, and the Ga composition value (1-y 1-x 1) is increased and then decreased along the growth direction of the p-type electron blocking layer 160.
In a second embodiment based on the first embodiment of the second aspect, the In composition value x1 is graded In a V shape and the Ga composition value (1-y 1-x 1) is graded In an inverted V shape along the growth direction of the p-type electron blocking layer 160.
In the third embodiment based on the first embodiment or the second embodiment of the second aspect, In the p-type electron blocking layer, the Ga component value (1-y 1-x 1) is highest at the position where the In component value x1 is lowest.
In a fourth embodiment based on the second aspect, in the p-type electron blocking layer, the Mg doping concentration is V-shaped or inverted V-shaped or constant in the direction from the edge to the middle.
In a third aspect, an embodiment of the present invention provides a method for preparing a near ultraviolet LED using an MOCVD technique, including the following steps:
growing a GaN buffer layer with the thickness of 1-3 microns on a PSS substrate in a reaction chamber of MOCVD epitaxial equipment in a hydrogen atmosphere at the temperature of 800-1000 ℃; then the temperature is increased to 1000-1150 ℃ to grow a high-temperature layer 130 with the thickness of 1-4 microns; the growth pressure is controlled between 100mbar and 600 mbar;
step two, growing 1-3 micron n-type Al in a hydrogen atmosphere at the temperature of 1100-1200 DEG CmGa1－mAn N layer, wherein the doped donor impurity is Si, and the doping concentration of Si is 1E 17-1E 20/cm3To (c) to (d); then In is grown for 5-15 periods In a nitrogen atmosphere at a temperature of 700-950 DEG CxGa1－xN/AlyGa1－yN, 0.001 ≦ x < y ≦ 1, wherein well layers In each periodxGa1－xThe thickness of N is 2 nm-10 nm, the In component x is more than 0.001 and less than or equal to 0.03, and the barrier layer AlyGa1－yThe thickness of N is 10 nm-30 nm, and the thickness of the Al component y is more than or equal to 0.05 and less than or equal to 0.2;
step three, in the hydrogen atmosphere, the temperature is controlled to be about 1100-1200 ℃, and Al with the thickness of 10 nm-30 nm grows on the light-emitting active regiony1Inx1Ga1－y1－x1The p-type electron blocking layer of N, y, m and N are all smaller than y1, and an Mg source is introduced, wherein the doping concentration of Mg is 1E 18-1E 20/cm3The Al component value y1 is kept unchanged In the growth process of the p-type electron blocking layer, the In component value x1 is reduced and then increased, the Ga component value 1-y 1-x 1 is increased and then reduced, the Ga component value 1-y 1-x 1 is highest at the position where the In component value x1 is lowest, so that the In component value is lowest and the Ga component value is highest at the middle position of the p-type electron blocking layer, and an electron blocking layer structure with bidirectional polarization induction is formed In the layer. The Al component y1 is greater than the active layer Al component y, namely, y1 is more than or equal to 0.2 and less than or equal to 0.5;
fourthly, growing p-type Al with the thickness of 20nm to 100nm on the p-type electron blocking layernGa1－nThe temperature of the N layer is controlled to be about 800-1000 ℃, wherein the doping concentration of Mg is 1E 18-1E 20/cm3Then, a contact layer is grown.
The near ultraviolet LED and the preparation method thereof provided by the invention have the beneficial effects that: the material of the p-type electron blocking layer comprises Aly1Inx1Ga1－y1－x1N, wherein the In component value x1 is gradually changed In a V shape and the Ga component value (1-y 1-x1) is in an inverted V shape, and the method can achieve two purposes simultaneously. First, the edge of the p-type electron barrier layer, the last quantum barrier layer in the light-emitting active region on the front side and the back side of the p-type electron barrier layer before and after growth of the p-type electron barrier layer and the p-type AlnGa1－nThe lattice matching of the N material can reduce the stress of the light-emitting active region and the p-type electron barrier layer and improve the crystal quality of epitaxial growth; and secondly, the polarization effect of the last quantum barrier layer and the p-type electron barrier layer can be improved, the energy band structure of the device is optimized, the electron limiting effect and the hole injection efficiency are effectively increased, and therefore the quantum efficiency and the luminous efficiency of the semiconductor ultraviolet device are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a near ultraviolet LED according to a first embodiment of the present invention.
Fig. 2 is a graph showing the variation trend of the components of the p-type electron blocking layer of fig. 1.
Fig. 3 is a graph showing the variation tendency of the components of the p-type electron blocking layer in the second embodiment of the present invention.
Fig. 4 is a flowchart of a method for manufacturing a near-ultraviolet LED according to a third embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a near ultraviolet LED manufacturing process.
Icon: 100-near ultraviolet LED; 110-a substrate; 120-a buffer layer; 130-high temperature layer; 140-n type AlmGa1－ mN layers; 150-a light emitting active region; a 160-p type electron blocking layer; 170-p type AlnGa1－nN layers; 180-contact layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like, indicate orientations or positional relationships that are based on the orientations or positional relationships shown in the drawings, or the orientations or positional relationships that the products of the present invention conventionally put into use, or the orientations or positional relationships that the persons skilled in the art conventionally understand, are only used for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the equipment or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Because the AlGaN-based ultraviolet LED has the advantages of environmental protection, no mercury, sterilization, high modulation frequency and the like, the AlGaN-based ultraviolet LED has important application value in the fields of ultraviolet curing, air and water purification, biomedical treatment, high-density storage, safety, secret communication and the like.
Currently, the luminous efficiency of AlGaN-based ultraviolet LEDs is much lower than that of GaN-based blue LEDs, and the shorter the wavelength, the lower the luminous efficiency. One key factor limiting efficiency is: insufficient hole injection and electron leakage. Since the activation energy of Mg in GaN is around 200meV and higher in p-AlGaN, which is a high Al composition (up to 630meV in AlN), the concentration of holes that can be thermally activated is lower, causing severe shortage of hole injection, resulting in large amounts of electrons leaking from the active region into the p-type region and being lost. The activation energy of Si in GaN is only 15meV, and in AlN is as high as 282 meV. Whether doped N-type or P-type, the doping efficiency of impurities in wide bandgap AlGaN is very low. For AlGaN-based ultraviolet LEDs grown on polar surfaces, the polarization effect can further exacerbate electron current leakage. These leaked electrons do not emit light efficiently and their energy is dissipated only in the form of heat.
In order to reduce electron current leakage, an Electron Blocking Layer (EBL) can be introduced behind the Last Quantum Barrier (LQB) in the device structure, and the electron leakage is blocked by utilizing the conduction band order of the LQB/EBL interface. In general, a blue LED usually adopts GaN as LQB and AlGaN as EBL; ultraviolet LEDs typically employ AlGaN of constant Al composition as the LQB and AlGaN of higher Al composition as the EBL. However, the structure thus obtained will shift the valence band upward, forming a barrier to holes, making hole injection more insufficient to be detrimental to radiative recombination, while insufficient hole injection will induce greater electron leakage.
Therefore, how to effectively improve the carrier injection efficiency or the hole injection efficiency of the near ultraviolet LED and increase the electron confinement effect to achieve the improvement of the internal quantum efficiency and the light emitting efficiency thereof is a technical problem mainly solved by the following embodiments.
First embodiment
Referring to fig. 1, the present embodiment provides a near ultraviolet LED100 using MOCVD technology, where the near ultraviolet LED100 includes a substrate 110, and a buffer layer 120, a high temperature layer 130, and n-type Al sequentially grown on the substrate 110mGa1－mN layer 140, light emitting active region 150, p-type electron blocking layer 160, p-type AlnGa1－nAn N layer 170 and a contact layer 180, wherein the material of the light emitting active region 150 includes InxGa1－xN and AlyGa1－yN, the material of the p-type electron blocking layer 160 includes Aly1Inx1Ga1－y1－ x1X is more than or equal to 0.001 and less than or equal to 1, and y, m and N are all less than y 1.
Referring to fig. 2, along the growth direction of the p-type electron blocking layer 160, the Al composition value y1 remains unchanged, the In composition value x1 decreases and then increases, and the Ga composition value 1-y 1-x 1 increases and then decreases. Preferably, the In composition value x1 is V-shaped and the Ga composition value 1-y 1-x 1 is inverted V-shaped. Further, Ga component values 1 to y1 to x1 are highest at the position where the In component value x1 is lowest. Thereby forming an electron blocking layer structure with a bidirectional polarization induction in this layer.
The lowest In component value x1 may be zero, that is, the p-type electron blocking layer 160 is gradually changed from AlInGaN to AlGaN and then to AlInGaN along the growth direction.
In this embodiment, the In composition value x1 and the Ga composition value 1-y 1-x 1 are linearly graded along the growth direction of the p-type electron blocking layer 160, and In other embodiments, the In composition value x1 and the Ga composition value 1-y 1-x 1 may be non-linearly graded or step-wise graded, so as to form a gradient similar to a V shape or an inverted V shape.
In addition, in the p-type electron blocking layer 160, the Mg doping concentration is gradually changed in a V shape or gradually changed in an inverted V shape or is constant in a direction from the edge to the middle. Thus, the thermally activatable hole concentration is high, the hole injection amount is large, and the loss of electrons by leakage from the active region to the p-type region can be reduced.
The near ultraviolet LED100 adopting the MOCVD technology provided in this embodiment has the following beneficial effects:
the p-type electron blocking layer 160 has bidirectional polarization, can reduce the stress of the light-emitting active region 150 and the p-type electron blocking layer 160, improve the crystal quality of epitaxial growth, improve the polarization effect at the LQB and EBL positions, optimize the energy band structure of the device, effectively increase the electron limiting effect and the hole injection efficiency, and thus improve the quantum efficiency and the light-emitting efficiency of the semiconductor ultraviolet device.
Second embodiment
The present embodiment provides a near-ultraviolet LED100 using MOCVD, which has a similar structure to that of the first embodiment, except that the In component value x1 In the p-type electron blocking layer 160 is at the lowest greater than zero.
Referring to fig. 3, along the growth direction of the p-type electron blocking layer 160, the Al composition y1 remains unchanged, the In composition x1 is gradually changed In a V-shape, and the Ga composition 1-y 1-x 1 is gradually changed In an inverted V-shape. Further, Ga component values 1 to y1 to x1 are highest at the position where the In component value x1 is lowest.
The lowest In component value x1 is greater than zero, i.e., all of the p-type electron blocking layers 160 along the growth direction are AlInGaN.
In addition, in the p-type electron blocking layer 160, the Mg doping concentration is gradually changed in a V shape or gradually changed in an inverted V shape or is constant in a direction from the edge to the middle. Thus, the thermally activatable hole concentration is high, the hole injection amount is large, and the loss of electrons by leakage from the active region to the p-type region can be reduced.
Other layer structures of the near ultraviolet LED100 in this embodiment are the same as those in the first embodiment, and are not described herein.
The near ultraviolet LED100 provided by the present embodiment has the following beneficial effects:
the p-type electron blocking layer 160 has bidirectional polarization, can reduce the stress of the light-emitting active region 150 and the p-type electron blocking layer 160, improve the crystal quality of epitaxial growth, improve the polarization effect at the LQB and EBL positions, optimize the energy band structure of the device, effectively increase the electron limiting effect and the hole injection efficiency, and thus improve the quantum efficiency and the light-emitting efficiency of the semiconductor ultraviolet device.
Third embodiment
Referring to fig. 4, the present embodiment provides a method for manufacturing a near ultraviolet LED100 using MOCVD technology, which can be used to manufacture the near ultraviolet LED100 in the first embodiment or the second embodiment. The preparation method of the near ultraviolet LED100 is mainly based on MOCVD epitaxial growth technology, and specifically comprises the following steps:
s1: referring to fig. 5, a buffer layer 120, a high temperature layer 130, and n-type Al are sequentially grown on a substrate 110mGa1－mN layer 140, light emitting active region 150.
First, a buffer layer 120 of GaN with a thickness of 1 to 3 micrometers is grown on a substrate 110 of PSS in a reaction chamber of an MOCVD epitaxial apparatus in a hydrogen atmosphere at a temperature of 800 to 1000 ℃.
Then, the temperature is increased to 1000-1150 ℃ to grow a high-temperature layer 130 with the thickness of 1-4 microns; the growth pressure is controlled between 100mbar and 600 mbar.
Then, growing 1-3 micron n-type Al in a hydrogen atmosphere at the temperature of 1100-1200 DEG CmGa1－ m The N layer 140 is doped with Si with a donor impurity concentration of 1E 17-1E 20/cm3In the meantime.
Finally, In is grown for 5-15 periods In a nitrogen atmosphere at a temperature of 700-950 DEG CxGa1－xN/AlyGa1－yN, that is, the material of the light emitting active region 150 includes InxGa1－xN and AlyGa1－yAnd x is more than or equal to 0.001 and less than or equal to 1. In which well layers In each periodxGa1－xThe thickness of N is 2 nm-10 nm, the In component x is more than 0.001 and less than or equal to 0.03, and the barrier layer AlyGa1－yThe thickness of N is 10 nm-30 nm, and the thickness of the Al component y is more than or equal to 0.05 and less than or equal to 0.2.
S2: referring to fig. 1, a p-type electron blocking layer 160, p-type Al, is grown on the light emitting active region 150nGa1－nN layer 170 and contact layer 180.
Firstly, in hydrogen atmosphere, the temperature is controlled to be about 1100 ℃ to 1200 ℃, and Al with the thickness of 10nm to 30nm grows on the light-emitting active region 150y1Inx1Ga1－y1－x1A p-type electron blocking layer 160 of N, that is, a material of the p-type electron blocking layer 160 includes Aly1Inx1Ga1－y1－x1N, y, m and N are all less than y1, and an Mg source is introduced, wherein the Mg doping concentration is 1E 18-1E 20/cm3。
Secondly, p-type Al with the thickness of 20nm to 100nm is grown on the p-type electron blocking layer 160nGa1－nThe temperature of the N layer 170 is controlled to be about 800-1000 ℃. The Mg doping concentration of the layer is 1E 18-1E 20/cm3, and then a contact layer 180 with a few nanometers grows.
As an alternative example, In the growth direction of the p-type electron blocking layer 160, referring to FIG. 2, the Al component value y1 is kept constant, the In component value x1 is decreased and then increased, and the Ga component value 1-y 1-x 1 is increased and then decreased. Preferably, the In composition value x1 is V-shaped and the Ga composition value 1-y 1-x 1 is inverted V-shaped. Further, the Ga component value is 1-y 1-x 1 is highest at the position where the In component value x1 is lowest, so that the In component value is lowest and the Ga component value is highest at the middle position of the p-type electron blocking layer 160, In which an electron blocking layer structure having a bidirectional polarization induction is formed. The Al component y1 is greater than the active layer Al component y, namely, y1 is more than or equal to 0.2 and less than or equal to 0.5. The lowest In component value x1 may be zero, that is, the p-type electron blocking layer 160 is gradually changed from AlInGaN to AlGaN and then to AlInGaN along the growth direction. As another alternative, In the growth direction of the p-type electron blocking layer 160, referring to fig. 3, the Al composition value y1 is kept constant, the In composition value x1 is graded In a V shape, and the Ga composition value 1-y 1-x 1 is graded In an inverted V shape. Further, Ga component values 1 to y1 to x1 are highest at the position where the In component value x1 is lowest. The lowest In component value x1 is greater than zero, i.e., all of the p-type electron blocking layers 160 along the growth direction are AlInGaN.
In addition, in the p-type electron blocking layer 160, the Mg doping concentration is gradually changed in a V shape or gradually changed in an inverted V shape or is constant in a direction from the edge to the middle.
The preparation method of the near ultraviolet LED100 provided by this embodiment has the following beneficial effects:
the p-type electron blocking layer 160 has bidirectional polarization, can reduce the stress of the light-emitting active region 150 and the p-type electron blocking layer 160, improve the crystal quality of epitaxial growth, improve the polarization effect at the LQB and EBL positions, optimize the energy band structure of the device, effectively increase the electron limiting effect and the hole injection efficiency, and thus improve the quantum efficiency and the light-emitting efficiency of the semiconductor ultraviolet device.
It should be emphasized that the near-ultraviolet LED100 described in this application has a wide application range, for example, in various semiconductor devices, and the application of the near-ultraviolet LED100 provided in this application should fall within the scope of protection of this application.
It should be noted that the numerical values mentioned in the present application, including the values of the components, are only reliable numerical values obtained by the applicant through experiments and calculations, and are not limited to only these values of the corresponding parameters. Those skilled in the art may make further experiments based on the scheme of the present application to obtain other values with similar effects, which do not depart from the core of the present application and should also fall within the scope of the protection claimed in the present application.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. The near ultraviolet LED adopting the MOCVD technology is characterized by comprising a substrate (110), and a buffer layer (120), a high-temperature layer (130) and n-type Al which are sequentially grown on the substrate (110)mGa1－mAn N layer (140), a light emitting active region (150), a p-type electron blocking layer (160), p-type AlnGa1－nAn N layer (170) and a contact layer (180), wherein the material of the light emitting active region (150) comprises InxGa1－xN and AlyGa1－yN, the material of the p-type electron blocking layer (160) comprises Aly1Inx1Ga1－y1－x1N, x is more than or equal to 0.001 and less than or equal to y and less than or equal to 1, y, m and N are all less than y1, along the growth direction of the p-type electron blocking layer (160), the Al component value y1 is kept unchanged, the In component value x1 is firstly reduced and then increased, the Ga component value (1-y 1-x 1) is firstly increased and then reduced, and the Ga component value (1-y 1-x 1) is highest at the position where the In component value x1 is lowest.
2. The near-ultraviolet LED of claim 1, wherein the In-composition value x1 is V-shaped graded and the Ga-composition value (1-y 1-x 1) is inverted V-shaped graded along the growth direction of the p-type electron blocking layer (160).
3. The near ultraviolet LED of claim 1, wherein the Mg doping concentration in the p-type electron blocking layer (160) is V-shaped or inverted V-shaped or constant in the direction from the edge to the middle.
4. A method for preparing a near ultraviolet LED by using MOCVD technology is characterized by comprising the following steps:
a buffer layer (120), a high temperature layer (130), and n-type Al are sequentially grown on a substrate (110)mGa1－mAn N layer (140), a light emitting active region (150), wherein the material of the light emitting active region (150) comprises InxGa1－xN and AlyGa1－yN；
Growing a p-type electron blocking layer (160), p-type Al on the light emitting active region (150)nGa1－nAn N layer (170) and a contact layer (180), wherein the material of the p-type electron blocking layer (160) comprises Aly1Inx1Ga1－y1－x1N; wherein x is more than or equal to 0.001 and less than or equal to y is less than or equal to 1, y, m and n are both less than y1, along the growth direction of the p-type electron blocking layer (160), the Al component value y1 is kept unchanged, the In component value x1 is firstly reduced and then increased, the Ga component value (1-y 1-x 1) is firstly increased and then reduced, and the Ga component value (1-y 1-x 1) is highest at the position where the In component value x1 is lowest.
5. A method for preparing a near ultraviolet LED by using MOCVD technology is characterized by comprising the following steps:
growing a GaN buffer layer (120) with the thickness of 1-3 microns on a PSS substrate (110) in a reaction chamber of MOCVD epitaxial equipment in a hydrogen atmosphere at the temperature of 800-1000 ℃; then the temperature is increased to 1000-1150 ℃ to grow a high-temperature layer 130 with the thickness of 1-4 microns; the growth pressure is controlled between 100mbar and 600 mbar;
step two, growing 1-3 micron n-type Al in the hydrogen atmosphere at 1100-1200 DEG CmGa1－mAn N layer (140) doped with Si with a donor impurity concentration of 1E 17-1E 20/cm3To (c) to (d); then In is grown for 5-15 periods In a nitrogen atmosphere at a temperature of 700-950 DEG CxGa1－xN/AlyGa1－yA light emitting active region (150) of N, 0.001 ≦ x < y ≦ 1, wherein well layers In each periodxGa1－xThe thickness of N is 2 nm-10 nm, the In component x is more than 0.001 and less than or equal to 0.03, and the barrier layer AlyGa1－yThe thickness of N is 10 nm-30 nm, and the thickness of the Al component y is more than or equal to 0.05 and less than or equal to 0.2;
step three, controlling the temperature to be 1100-1200 ℃ in the hydrogen atmosphere, and growing 10-30 nm of Al on the light-emitting active region (150)y1Inx1Ga1－y1－x1The p-type electron blocking layer (160) of N, y, m and N are all smaller than y1, and an Mg source is introduced, wherein the doping concentration of Mg is 1E 18-1E 20/cm3The Al component y1 is kept unchanged In the growth process of the p-type electron blocking layer (160), the In component x1 is reduced and then increased, the Ga component 1-y 1-x 1 is increased and then reduced, the Ga component 1-y 1-x 1 is highest at the position where the In component x1 is lowest, so that the In component is lowest and the Ga component is highest at the middle position of the p-type electron blocking layer (160), an electron blocking layer structure with bidirectional polarization induction is formed In the electron blocking layer, and the Al component y1 is larger than the Al component y of an active layer, namely, y1 is more than or equal to 0.2 and less than or equal to 0.5;
fourthly, p-type Al with the thickness of 20nm to 100nm grows on the p-type electron blocking layer (160)nGa1－nAn N layer (170) with a temperature controlled between 800 ℃ and 1000 ℃, wherein the Mg doping concentration is 1E 18-1E 20/cm3A contact layer (180) is then grown.
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Address after: 510651 No. 363, Changxin Road, Guangzhou, Guangdong, Tianhe District Patentee after: Institute of semiconductors, Guangdong Academy of Sciences Address before: 510000 363 Changxin Road, Tianhe District, Guangzhou, Guangdong. Patentee before: GUANGDONG INSTITUTE OF SEMICONDUCTOR INDUSTRIAL TECHNOLOGY |