CN111024213B - Flexible capacitive vibration sensor and manufacturing method thereof - Google Patents
Flexible capacitive vibration sensor and manufacturing method thereof Download PDFInfo
- Publication number
- CN111024213B CN111024213B CN201911372282.7A CN201911372282A CN111024213B CN 111024213 B CN111024213 B CN 111024213B CN 201911372282 A CN201911372282 A CN 201911372282A CN 111024213 B CN111024213 B CN 111024213B
- Authority
- CN
- China
- Prior art keywords
- capacitor plate
- substrate
- electrode
- isolation layer
- vibration sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000002955 isolation Methods 0.000 claims abstract description 43
- 239000003990 capacitor Substances 0.000 claims description 143
- 239000000758 substrate Substances 0.000 claims description 105
- -1 polyethylene Polymers 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 239000004698 Polyethylene Substances 0.000 claims description 7
- 229920000573 polyethylene Polymers 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000004964 aerogel Substances 0.000 claims description 6
- 229920001940 conductive polymer Polymers 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000004703 cross-linked polyethylene Substances 0.000 claims description 5
- 229920003020 cross-linked polyethylene Polymers 0.000 claims description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000003365 glass fiber Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 7
- 238000011161 development Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000004512 die casting Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a flexible capacitive vibration sensor and a manufacturing method thereof. The flexible capacitive vibration sensor comprises a first vibration sensitive unit, a second vibration sensitive unit and an isolation layer, wherein the first vibration sensitive unit and the second vibration sensitive unit are respectively arranged on two sides of the isolation layer and are sealed and combined into a whole through the isolation layer. The flexible capacitive vibration sensor provided by the embodiment of the invention has the advantages of simple structure, simple and convenient preparation process, high sensitivity, stable performance, good consistency and low cost; the manufacturing process provided by the invention has higher reliability, and the sensitivity of the flexible vibration sensor is greatly improved; and the stability and yield of the device are improved.
Description
Technical Field
The invention relates to a vibration sensor, in particular to a flexible capacitive vibration sensor and a manufacturing method thereof, and belongs to the technical field of flexible electronic devices.
Background
In the highly developed modern industry, the development of modern test technology towards digitization and informatization is a certain development trend, and the most front end of the test system is a sensor, which is the soul of the whole test system and is listed as the top technology by countries in the world, in particular to the IC technology and the computer technology which are rapidly developed in recent years, so that a good and reliable scientific and technical basis is provided for the development of the sensor. The development of the sensor is growing day after month, and digitization, multiple functions and intellectualization are important characteristics of the development of the modern sensor.
The vibration sensor is an alarm detection sensor widely used at present, and the traditional vibration sensor senses parameters (such as vibration speed, frequency, acceleration and the like) of mechanical motion vibration through an internal piezoelectric ceramic piece and spring heavy hammer structure, converts the parameters into usable output signals, and then amplifies the signals through an amplifier and the like and outputs control signals.
The vibration sensor can be used for long-term monitoring of vibration and displacement in machinery and thermal expansion amount of a rotor and a shell; the production line is automatically detected and controlled on line; measurement of various minute distances and minute movements in scientific research, and the like. The vibration sensor is one of key parts in the testing technology, has the advantages of low cost, high sensitivity, stable and reliable work and large adjustable range of vibration detection, and is widely applied to various fields of energy, chemical industry, medicine, automobiles, metallurgy, machine manufacturing, military industry, scientific research and teaching and the like.
The flexible sensor takes the flexible composite material as a sensing unit, has the characteristics of flexible electrode arrangement, no need of a complex sensing structure, simple process, low cost and the like, and is particularly the trend of key development in the field of the current sensors. CN105387927A discloses a novel flexible vibration sensor, which mainly comprises three-dimensional graphene and an elastic polymer matrix, wherein the three-dimensional graphene is coated inside the elastic polymer matrix, two ends of the three-dimensional graphene are provided with wires and penetrate out of the elastic polymer matrix, and the wires are connected with the three-dimensional graphene through silver colloid; the flexible vibration sensor can measure vibration signals to a certain extent, but due to the influence of the properties of the nano materials, the stability, consistency and controllability of the flexible vibration sensor are weak, and the sensitivity of the flexible vibration sensor cannot meet the high-precision requirement.
Disclosure of Invention
The invention mainly aims to provide a flexible capacitive vibration sensor and a manufacturing method thereof, so as to overcome the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a flexible capacitive vibration sensor which comprises a first vibration sensitive unit, a second vibration sensitive unit and an isolation layer, wherein the first vibration sensitive unit and the second vibration sensitive unit are respectively arranged at two sides of the isolation layer and are sealed and combined into a whole through the isolation layer,
the first vibration sensitive unit comprises a first vibration sensitive structure, the first vibration sensitive structure comprises a first capacitor plate and a second capacitor plate which are arranged at intervals, and a first medium material layer arranged between the first capacitor plate and the second capacitor plate, and a first capacitance signal can be generated between the first capacitor plate and the second capacitor plate;
the second vibration sensitive unit comprises a second vibration sensitive structure, the second vibration sensitive structure comprises a third capacitor plate and a fourth capacitor plate which are arranged at intervals, and a second medium material layer arranged between the third capacitor plate and the fourth capacitor plate, and a second capacitance signal can be generated between the third capacitor plate and the fourth capacitor plate.
Further, the first dielectric material layer and the second dielectric material layer both comprise an air dielectric.
Further, the first vibration sensitive unit further comprises a first substrate, the second vibration sensitive unit further comprises a second substrate, and the isolation layer is arranged between the first substrate and the second substrate and is packaged and integrated with the first substrate and the second substrate; the first vibration sensitive structure is encapsulated between the first substrate and the isolation layer; the second vibration sensitive unit further comprises a second substrate, the second vibration sensitive structure being encapsulated between the second substrate and the isolation layer.
Furthermore, a first accommodating groove is formed in the first surface of the first substrate, the first capacitor plate and the second capacitor plate are arranged in the first accommodating groove at intervals, a first cavity is formed between the first capacitor plate and the second capacitor plate in an enclosing manner, and an air medium is filled in the first cavity; and a second containing groove is formed in a third surface of the second substrate, the third capacitor plate and the fourth capacitor plate are arranged in the second containing groove at intervals, a second cavity is formed between the third capacitor plate and the fourth capacitor plate in a surrounding manner, and an air medium is filled in the second cavity.
Furthermore, a first electrode and a second electrode are arranged on the second surface of the first substrate, the first electrode is electrically connected with the first capacitor plate, and the second electrode is electrically connected with the second capacitor plate; the fourth surface of the second substrate is further provided with a third electrode and a fourth electrode, the third electrode is electrically connected with the third capacitor plate, the fourth electrode is electrically connected with the fourth capacitor plate, the first surface and the second surface are arranged in a back-to-back mode, and the third surface and the fourth surface are arranged in a back-to-back mode.
Furthermore, the first capacitor plate, the second capacitor plate, the third capacitor plate and the fourth capacitor plate are made of metal or conductive polymer.
Preferably, the metal includes any one or a combination of two or more of Pt, W, Cu, and Ni, but is not limited thereto.
Preferably, the conductive polymer includes a conductive rubber, but is not limited thereto.
Furthermore, the thicknesses of the first capacitor plate, the second capacitor plate, the third capacitor plate and the fourth capacitor plate are all 10-1000 μm.
Furthermore, the first electrode, the second electrode, the third electrode and the fourth electrode are all metal electrodes.
Preferably, the material of the first electrode, the second electrode, the third electrode, and the fourth electrode includes any one or a combination of two or more of Au, Cu, and Al, but is not limited thereto.
Preferably, the thickness of the first electrode, the second electrode, the third electrode and the fourth electrode is 10-1000 μm.
Further, the first substrate and the second substrate are both flexible substrates.
Preferably, the material of the first substrate and the second substrate includes any one or a combination of two or more of polyimide, polydimethylsiloxane and polyethylene, but is not limited thereto.
Further, the thickness of the first substrate and the second substrate is both 100-10000 μm.
Further, the material of the isolation layer includes, but is not limited to, a flexible insulating polymer.
Further, the isolation layer 30 includes a two-dimensional lattice structure and covering layers disposed on two opposite side surfaces of the two-dimensional lattice structure, where both the covering layers have flat surfaces, and the two covering layers are integrally formed with fillers filled in each lattice of the two-dimensional lattice structure; the two-dimensional grid structure may be formed of polyethylene, glass fiber, or the like, and the cover layer and the filling body may be formed of a material having a mass ratio of 100: 0.01-0.1 of cross-linked polyethylene and boron nitride aerogel.
Preferably, the flexible insulating polymer includes any one of silicone filled nano-ceramics, polydimethylsiloxane, and polyimide, but is not limited thereto.
Preferably, the thickness of the isolation layer is 10 to 1000 μm.
The embodiment of the invention also provides a manufacturing method of the flexible capacitive vibration sensor, which comprises the following steps: and respectively manufacturing and forming a first vibration sensitive unit and a second vibration sensitive unit, and sealing and combining the first vibration sensitive unit and the second vibration sensitive unit into a whole through an isolation layer.
Further, the manufacturing method of the flexible capacitive vibration sensor specifically includes:
providing a first substrate, wherein a first surface of the first substrate is provided with a first accommodating groove, a first capacitor plate is arranged at the bottom of the first accommodating groove, a second capacitor plate is arranged at an opening of the first accommodating groove in a sealing manner, and a first cavity is formed between the first capacitor plate and the second capacitor plate in a surrounding manner;
arranging a first electrode and a second electrode on a second surface of the first substrate, and electrically connecting the first electrode with the first capacitor plate, and electrically connecting the second electrode with the second capacitor plate, wherein the first surface and the second surface are arranged oppositely;
providing a second substrate, wherein a third surface of the second substrate is provided with a second containing groove, a third capacitor plate is arranged at the bottom of the second containing groove, a fourth capacitor plate is arranged at an opening of the second containing groove in a sealing manner, and a second cavity is formed between the third capacitor plate and the fourth capacitor plate in a surrounding manner, wherein the third surface and the fourth surface are arranged oppositely;
arranging a third electrode and a fourth electrode on a fourth surface of the second substrate, and electrically connecting the third electrode with the third capacitor plate, wherein the fourth electrode is electrically connected with the fourth capacitor plate;
and providing an isolation layer, arranging the isolation layer between the first surface of the first substrate and the third surface of the second substrate, and packaging and combining the isolation layer, the first substrate and the second substrate into a whole.
Compared with the prior art, the flexible capacitive vibration sensor provided by the embodiment of the invention has the advantages of simple structure, simple and convenient preparation process, high sensitivity, stable performance, good consistency and low cost; the flexible capacitive vibration sensor provided by the embodiment of the invention is a vibration sensor with a differential capacitive structure, wherein an upper part vibration sensitive structure and a lower part vibration sensitive structure are prepared on a flexible substrate through a die-casting process, then a flexible material is adopted for isolation to form a flexible capacitive vibration sensing basic structure, and finally the differential capacitive vibration sensor is formed through hot-press bonding; the manufacturing process has higher reliability, greatly improves the sensitivity of the flexible vibration sensor, and improves the stability and yield of devices.
Drawings
FIG. 1 is a schematic diagram of a flexible capacitive vibration sensor in accordance with an exemplary embodiment of the present invention;
fig. 2 is a schematic diagram of a process for manufacturing a flexible capacitive vibration sensor according to an exemplary embodiment of the present invention.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
Referring to fig. 1, a flexible capacitive vibration sensor according to an embodiment of the present invention is a differential capacitive vibration sensor, and includes a first vibration sensing unit 10, a second vibration sensing unit 20, and an isolation layer 30, where the first vibration sensing unit 10 and the second vibration sensing unit 20 are respectively disposed on two sides of the isolation layer 30 and are sealed and integrated by the isolation layer 30,
specifically, the first vibration sensitive unit 10 includes a first substrate 11 and a first vibration sensitive structure, a first receiving groove is disposed on a first surface of the first substrate 11, the first vibration sensitive structure is disposed in the first receiving groove, and an isolation layer is combined with the first surface of the first substrate 11 in a packaging manner, so as to form a first packaging cavity between the first substrate 11 and the isolation layer 30, and the first vibration sensitive structure is packaged in the first packaging cavity.
Specifically, the first vibration sensitive structure includes a first capacitor plate 12 and a second capacitor plate 13 which are arranged at intervals, and a first dielectric material layer arranged between the first capacitor plate 12 and the second capacitor plate 13, and a first capacitance signal can be generated between the first capacitor plate 12 and the second capacitor plate 13, wherein the first capacitor plate 12 is arranged at the bottom of a first accommodating groove, the second capacitor plate 13 is arranged at an opening of the first accommodating groove and is in sealing fit with the first substrate 11, so that a first cavity 14 is formed by enclosing the first capacitor plate 12 and the second capacitor plate 13, and the first cavity 14 is filled with an air medium to form the first dielectric material layer.
Specifically, the second surface of the first substrate 11 is further provided with a first electrode 15 and a second electrode 16, the first electrode 15 is electrically connected to the first capacitor plate through a first conductive channel disposed in the first substrate 11, the second electrode 16 is electrically connected to the second capacitor plate through a second conductive channel disposed in the first substrate 11, the first surface and the second surface of the first substrate are oppositely disposed, and the first conductive channel and the second conductive channel both include a through hole penetrating through the first substrate in the thickness direction and a conductive material filled in the through hole.
Specifically, the second vibration sensitive unit 20 includes a second substrate 21 and a second vibration sensitive structure, a second receiving groove is formed in a third surface of the second substrate 21, the second vibration sensitive structure is disposed in the second receiving groove, the isolation layer is combined with a third surface of the second substrate 21 in an encapsulation manner, so as to form a second encapsulation cavity between the second substrate 21 and the isolation layer 30, and the second vibration sensitive structure is encapsulated in the second encapsulation cavity.
Specifically, the second vibration sensitive structure includes a third capacitor plate 22 and a fourth capacitor plate 23 which are arranged at intervals, and a second dielectric material layer arranged between the third capacitor plate 22 and the fourth capacitor plate 23, and a second capacitance signal can be generated between the third capacitor plate 22 and the fourth capacitor plate 23, wherein the third capacitor plate 22 is arranged at the bottom of the second accommodating groove, the fourth capacitor plate 23 is arranged at the opening of the second accommodating groove and is in sealing fit with the second substrate 21, so that a second cavity 24 is formed by enclosing the third capacitor plate 22 and the fourth capacitor plate 23, and the second cavity 24 is filled with an air medium to form the second dielectric material layer.
Specifically, a third electrode 25 and a fourth electrode 26 are further disposed on the fourth surface of the second substrate 21, the third electrode 25 is electrically connected to the third capacitor plate 22 through a third conductive channel disposed in the second substrate 21, the fourth electrode 26 is electrically connected to the fourth capacitor plate 23 through a fourth conductive channel disposed in the second substrate 21, the third surface and the fourth surface of the second substrate are disposed opposite to each other, and the third conductive channel and the fourth conductive channel both include a through hole penetrating through the second substrate in the thickness direction and a conductive material filled in the through hole.
Specifically, the first surface of the first substrate 11 and the third surface of the second substrate 21 are respectively combined with two opposite side surfaces of the isolation layer 30 in a packaging manner, wherein the isolation layer 30 is further respectively combined with the second capacitor plate 13 and the fourth capacitor plate 23 in a packaging manner.
Specifically, the isolation layer 30 includes a two-dimensional lattice structure and covering layers disposed on opposite surfaces of the two-dimensional lattice structure, the two covering layers have flat surfaces, and the two covering layers are integrally formed with fillers filled in each lattice of the two-dimensional lattice structure; wherein, the two-dimensional grid structure can be formed by polyethylene, glass fiber and the like, and the covering layer and the filling body can be composed of crosslinked polyethylene and boron nitride aerogel with the mass ratio of 100: 0.01-0.1.
Specifically, the first capacitor plate 12, the second capacitor plate 13, the third capacitor plate 22 and the fourth capacitor plate 23 are made of a metal or a conductive polymer, wherein the metal includes any one or a combination of two or more of Pt, W, Cu and Ni, the conductive polymer includes a conductive rubber, and the thicknesses of the first capacitor plate 12, the second capacitor plate 13, the third capacitor plate 22 and the fourth capacitor plate 23 are all 10-1000 μm; the first electrode 15, the second electrode 16, the third electrode 25 and the fourth electrode 26 are all metal electrodes; the materials of the first electrode 15, the second electrode 16, the third electrode 25 and the fourth electrode 26 comprise any or the combination of more than two of Au, Cu and Al, and the thicknesses of the first electrode 15, the second electrode 16, the third electrode 25 and the fourth electrode 26 are 10-1000 μm.
Specifically, the first substrate 11 and the second substrate 21 are both flexible substrates; the materials of the first substrate 11 and the second substrate 21 comprise any one or the combination of more than two of polyimide, polydimethylsiloxane and polyethylene; the thicknesses of the first substrate 11 and the second substrate 21 are both 100-10000 μm; the material of the isolation layer 30 includes a flexible insulating polymer; the flexible insulating polymer comprises any one of organic silicon filled nano ceramic, polydimethylsiloxane and polyimide; the thickness of the isolation layer is 10-1000 μm.
Referring to fig. 2, in some more specific embodiments, the method for manufacturing a flexible capacitive vibration sensor specifically includes:
1) providing a metal substrate (such as a nickel substrate), cleaning the metal substrate, manufacturing a metal template by adopting methods such as photoetching, electroforming and the like, and then performing die casting on a first flexible base and a second flexible base by adopting the metal template, wherein a first surface of the first base is provided with a first accommodating groove, and a third surface of the second base is provided with a second accommodating groove;
2) manufacturing and forming a first capacitor polar plate at the bottom of a first containing groove of a first substrate by adopting the processes of evaporation, printing, sputtering and the like, arranging a first electrode and a second electrode on a second surface of the first substrate by adopting the processes of evaporation, sputtering and the like, wherein the first electrode is electrically connected with the first capacitor polar plate, and the second electrode is exposed from the first surface of the first substrate;
3) providing an isolation layer, and respectively manufacturing and forming a second capacitor plate and a fourth capacitor plate on two sides of the isolation layer, which are arranged back to back, by adopting a printing or photoetching process; specifically, the isolation layer comprises a two-dimensional grid structure and covering layers arranged on two opposite side surfaces of the two-dimensional grid structure, the two covering layers are provided with flat surfaces, and the two covering layers are integrally formed with filling bodies filled in grids of the two-dimensional grid structure; wherein, the two-dimensional grid structure can be formed by polyethylene, glass fiber and the like, and the covering layer and the filling body can be composed of cross-linked polyethylene and boron nitride aerogel with the mass ratio of 100: 0.01-0.1; the preparation process comprises the following steps: uniformly doping boron nitride aerogel into the molten cross-linked polyethylene, coating the boron nitride aerogel on the surface of the two-dimensional grid structure, and cooling and solidifying the two-dimensional grid structure; by adopting the isolating layer, the second capacitor plate, the fourth capacitor plate and the isolating layer can be better combined, the problem that the second capacitor plate, the fourth capacitor plate and the isolating layer are separated due to stress under the condition of severe change of environmental temperature and the like is avoided, and the two capacitors can be better isolated to eliminate mutual interference;
4) manufacturing a third capacitor electrode plate at the bottom of the second accommodating groove of the second substrate by adopting the processes of evaporation, printing, sputtering and the like, arranging a third electrode and a fourth electrode on the third surface of the second substrate by adopting the processes of evaporation, sputtering and the like, wherein the third electrode is electrically connected with the third capacitor electrode plate, and the fourth electrode is exposed from the third surface of the second substrate;
5) and packaging and combining the first substrate, the second substrate and the isolation layer into a whole in a hot-press bonding mode and the like, electrically connecting the second electrode with the second capacitor electrode, and electrically connecting the fourth electrode with the fourth capacitor electrode plate.
Certainly, in the manufacturing method of the flexible capacitive vibration sensor, the first capacitor plate and the second capacitor plate may be sequentially manufactured in the first accommodating groove of the first substrate, and the first capacitor plate, the second capacitor plate and the first substrate are combined to form a first cavity between the first capacitor plate and the second capacitor plate as an air dielectric layer, so as to form the first vibration sensitive structure; and sequentially manufacturing a third capacitor polar plate and a fourth capacitor polar plate in a second containing groove of the second substrate, combining the third capacitor polar plate and the fourth capacitor polar plate with the second substrate to form a second cavity between the third capacitor polar plate and the fourth capacitor polar plate as an air dielectric layer so as to form a second vibration sensitive structure, and then packaging and combining the first vibration sensitive structure, the second vibration sensitive structure and the isolation layer.
The flexible capacitive vibration sensor provided by the embodiment of the invention has the advantages of simple structure, simple and convenient preparation process, high sensitivity, stable performance, good consistency and low cost.
The embodiment of the invention provides a flexible capacitive vibration sensor which is a vibration sensor with a differential capacitive structure, wherein an upper vibration sensitive structure and a lower vibration sensitive structure are prepared on a flexible substrate through a die-casting process, then a flexible material is adopted for isolation to form a flexible capacitive vibration sensing base structure, and finally the differential capacitive vibration sensor is formed through hot-press bonding; the manufacturing process has higher reliability, and the sensitivity of the flexible vibration sensor is greatly improved; and the stability and yield of the device are improved.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (8)
1. A flexible capacitive vibration sensor is characterized by comprising a first vibration sensitive unit, a second vibration sensitive unit and a flexible isolation layer,
the first vibration sensitive unit comprises a first vibration sensitive structure and a first substrate, the first vibration sensitive structure comprises a first capacitor plate and a second capacitor plate, a first accommodating groove is formed in a first surface of the first substrate, the first capacitor plate and the second capacitor plate are arranged in the first accommodating groove at intervals, a first cavity is formed between the first capacitor plate and the second capacitor plate in an enclosing mode, an air medium is filled in the first cavity, a first capacitance signal can be generated between the first capacitor plate and the second capacitor plate, a first electrode and a second electrode are further arranged on a second surface of the first substrate, the first electrode is electrically connected with the first capacitor plate, the second electrode is electrically connected with the second capacitor plate, and the first surface and the second surface are arranged in a back-to-back mode;
the second vibration sensitive unit comprises a second vibration sensitive structure and a second substrate, the second vibration sensitive structure comprises a third capacitor plate and a fourth capacitor plate, a second accommodating groove is formed in a third surface of the second substrate, the third capacitor plate and the fourth capacitor plate are arranged in the second accommodating groove at intervals, a second cavity is formed between the third capacitor plate and the fourth capacitor plate in an enclosing mode, an air medium is filled in the second cavity, a second capacitance signal can be generated between the third capacitor plate and the fourth capacitor plate, a third electrode and a fourth electrode are further arranged on a fourth surface of the second substrate, the third electrode is electrically connected with the third capacitor plate, the fourth electrode is electrically connected with the fourth capacitor plate, and the third surface and the fourth surface are arranged oppositely;
the isolation layer is arranged between the first substrate and the second substrate and is packaged and integrated with the first substrate and the second substrate; the first vibration sensitive structure is encapsulated between the first substrate and the isolation layer; the second vibration sensitive structure is encapsulated between the second substrate and the isolation layer;
the first capacitor plate, the second capacitor plate, the third capacitor plate and the fourth capacitor plate are all made of conductive polymers, and the first substrate and the second substrate are both flexible substrates;
the isolation layer comprises a two-dimensional grid structure and covering layers arranged on two opposite side surfaces of the two-dimensional grid structure, the two covering layers are provided with flat surfaces, and the two covering layers are integrally formed with filling bodies filled in grids of the two-dimensional grid structure; wherein the two-dimensional lattice structure is formed by polyethylene or glass fiber, and the covering layer and the filling body are both formed by the following components in a mass ratio of 100: 0.01-0.1 of cross-linked polyethylene and boron nitride aerogel;
the thicknesses of the first capacitor plate, the second capacitor plate, the third capacitor plate, the fourth capacitor plate and the isolating layer are all 10-1000 microns.
2. The flexible capacitive vibration sensor of claim 1, wherein: the conductive polymer includes a conductive rubber.
3. The flexible capacitive vibration sensor of claim 1, wherein: the first electrode, the second electrode, the third electrode and the fourth electrode are all metal electrodes.
4. The flexible capacitive vibration sensor of claim 3, wherein: the first electrode, the second electrode, the third electrode and the fourth electrode are made of any or a combination of more than two of Au, Cu and Al.
5. The flexible capacitive vibration sensor of claim 3, wherein: the thickness of the first electrode, the second electrode, the third electrode and the fourth electrode is 10-1000 μm.
6. The flexible capacitive vibration sensor of claim 1, wherein: the first substrate and the second substrate are made of any one or a combination of more than two of polyimide, polydimethylsiloxane and polyethylene.
7. The flexible capacitive vibration sensor of claim 1, wherein: the thickness of the first substrate and the second substrate is both 100-10000 μm.
8. The method of manufacturing a flexible capacitive vibration sensor according to any of claims 1 to 7, comprising: providing a first substrate, wherein a first surface of the first substrate is provided with a first accommodating groove, a first capacitor plate is arranged at the bottom of the first accommodating groove, a second capacitor plate is arranged at an opening of the first accommodating groove in a sealing manner, and a first cavity is formed between the first capacitor plate and the second capacitor plate in a surrounding manner;
arranging a first electrode and a second electrode on the second surface of the first substrate, and electrically connecting the first electrode with the first capacitor plate, the second electrode with the second capacitor plate, wherein the first surface and the second surface are arranged oppositely;
providing a second substrate, wherein a third surface of the second substrate is provided with a second containing groove, a third capacitor plate is arranged at the bottom of the second containing groove, a fourth capacitor plate is arranged at an opening of the second containing groove in a sealing manner, a second cavity is formed between the third capacitor plate and the fourth capacitor plate in a surrounding manner, and the third surface and the fourth surface are arranged oppositely;
arranging a third electrode and a fourth electrode on a fourth surface of the second substrate, and electrically connecting the third electrode with the third capacitor plate, wherein the fourth electrode is electrically connected with the fourth capacitor plate;
and providing an isolation layer, arranging the isolation layer between the first surface of the first substrate and the third surface of the second substrate, and packaging and combining the isolation layer, the first substrate and the second substrate into a whole.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911372282.7A CN111024213B (en) | 2019-12-27 | 2019-12-27 | Flexible capacitive vibration sensor and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911372282.7A CN111024213B (en) | 2019-12-27 | 2019-12-27 | Flexible capacitive vibration sensor and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111024213A CN111024213A (en) | 2020-04-17 |
CN111024213B true CN111024213B (en) | 2021-03-30 |
Family
ID=70214988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911372282.7A Active CN111024213B (en) | 2019-12-27 | 2019-12-27 | Flexible capacitive vibration sensor and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111024213B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112161695B (en) * | 2020-09-21 | 2022-04-29 | 清华大学深圳国际研究生院 | Flexible vibration sensor and manufacturing method thereof |
WO2023191724A2 (en) * | 2022-03-30 | 2023-10-05 | Nanyang Technological University | Sensor and method for relative motion detection |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101644718A (en) * | 2009-07-02 | 2010-02-10 | 中国科学院声学研究所 | Capacitive acceleration sensor with acoustic cavity |
CN103424214A (en) * | 2013-08-26 | 2013-12-04 | 中国科学院合肥物质科学研究院 | Flexible capacitive touch sensor and manufacturing method of flexible capacitive unit of flexible capacitive touch sensor |
CN106017748A (en) * | 2016-05-19 | 2016-10-12 | 北京印刷学院 | Capacitive flexible pressure sensor based on composite material dielectric layer and its preparation method |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2073209C1 (en) * | 1993-03-17 | 1997-02-10 | Владимир Ильич Баженов | Vibratory gyro |
US6831394B2 (en) * | 2002-12-11 | 2004-12-14 | General Electric Company | Backing material for micromachined ultrasonic transducer devices |
EP1761998A4 (en) * | 2004-02-27 | 2011-05-11 | Georgia Tech Res Inst | Harmonic cmut devices and fabrication methods |
CN102155987B (en) * | 2010-12-31 | 2012-06-13 | 北京遥测技术研究所 | Differential capacitor type micro-vibration sensor |
US8650963B2 (en) * | 2011-08-15 | 2014-02-18 | Pgs Geophysical As | Electrostatically coupled pressure sensor |
CN203298784U (en) * | 2013-02-28 | 2013-11-20 | 程有信 | Rotor type differential capacitive sensor |
US9625330B2 (en) * | 2014-08-01 | 2017-04-18 | The Board Of Trustees Of The Leland Stanford Junior University | Methods and apparatus concerning multi-tactile sensitive (E-skin) pressure sensors |
CN104113812A (en) * | 2014-08-11 | 2014-10-22 | 苏州敏芯微电子技术有限公司 | Capacitive micro-silicon microphone and production method thereof |
CN106153178A (en) * | 2015-03-17 | 2016-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Compliant conductive vibrating diaphragm, flexible vibration sensor and its preparation method and application |
CN105387927A (en) * | 2015-11-23 | 2016-03-09 | 南京邮电大学 | Novel flexible vibration sensor |
CN105413997B (en) * | 2015-12-09 | 2017-11-07 | 华南理工大学 | Flexibility capacitance type micromachined ultrasonic transducer and preparation method thereof |
JP2017163085A (en) * | 2016-03-11 | 2017-09-14 | 出光興産株式会社 | Manufacturing method of joined body |
US10234945B2 (en) * | 2016-09-09 | 2019-03-19 | Immersion Corporation | Compensated haptic rendering for flexible electronic devices |
CN107152967A (en) * | 2017-06-27 | 2017-09-12 | 常州瑞丰特科技有限公司 | Two-dimentional condenser type low-frequency shock transducer and preparation method thereof |
CN108225544B (en) * | 2017-11-27 | 2020-02-18 | 东南大学 | A double-layer multiplexed triangular folded beam mass block resonance system and its trace detection method |
CN109489804B (en) * | 2018-12-07 | 2021-09-28 | 翟如选 | Acoustic wave detector |
CN113025975B (en) * | 2019-06-28 | 2022-08-30 | 中北大学 | Preparation process of passive MEMS sensor for complex component surface vibration measurement |
CN110542455B (en) * | 2019-09-16 | 2021-11-05 | 中北大学 | A kind of HTCC composite microsensor for simultaneous pressure/vibration measurement and preparation method thereof |
-
2019
- 2019-12-27 CN CN201911372282.7A patent/CN111024213B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101644718A (en) * | 2009-07-02 | 2010-02-10 | 中国科学院声学研究所 | Capacitive acceleration sensor with acoustic cavity |
CN103424214A (en) * | 2013-08-26 | 2013-12-04 | 中国科学院合肥物质科学研究院 | Flexible capacitive touch sensor and manufacturing method of flexible capacitive unit of flexible capacitive touch sensor |
CN106017748A (en) * | 2016-05-19 | 2016-10-12 | 北京印刷学院 | Capacitive flexible pressure sensor based on composite material dielectric layer and its preparation method |
Also Published As
Publication number | Publication date |
---|---|
CN111024213A (en) | 2020-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107436205B (en) | On-chip temperature compensation graphene pressure sensor | |
CN102768290B (en) | MEMS (micro-electrochemical systems) accelerometer and production method thereof | |
CN201653604U (en) | Pressure sensor | |
CN205785644U (en) | MEMS minute-pressure pressure transducer | |
CN110631743A (en) | Piezoresistive sensor and its preparation method | |
CN111024213B (en) | Flexible capacitive vibration sensor and manufacturing method thereof | |
CN111003683B (en) | SiC high-temperature pressure sensor and packaging method thereof | |
CN106535071B (en) | Integrated device of MEMS microphone and environmental sensor and manufacturing method thereof | |
CN206132279U (en) | High temperature pressure sensor | |
CN104155051A (en) | Wide range graphene high temperature pressure sensor | |
CN110207839A (en) | A kind of graphene high temperature sensor | |
WO2019079420A1 (en) | Temperature coefficient of offset compensation for force sensor and strain gauge | |
CN100565146C (en) | A kind of flat type piezoelectric six-dimensional force sensor | |
CN104062462A (en) | MEMS piezoresistive acceleration sensor and manufacturing method thereof | |
US6022756A (en) | Metal diaphragm sensor with polysilicon sensing elements and methods therefor | |
CN104280186B (en) | The preparation of temperature drift self compensation SOI pressure transducer and compensation method | |
CN210922827U (en) | Integrated miniature vibration sensor | |
CN203519214U (en) | Pressure sensor's packaging structure | |
CN207197705U (en) | Temperature-compensating graphene pressure sensor in a kind of piece | |
CN106908163B (en) | A kind of highly sensitive film thermocouple sensor chip and production method | |
CN210774407U (en) | Graphene high-temperature sensor | |
CN101694409A (en) | Method for manufacturing all-silica pressure chips of SOI oil pressure sensor | |
CN110459672A (en) | A kind of piezoelectric ceramic sensor and its preparation method | |
Kähler et al. | Fabrication, packaging, and characterization of p-SOI Wheatstone bridges for harsh environments | |
CN206302569U (en) | Integrated device of MEMS microphone and environmental sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |