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CN110993705A - 一种高转换效率异质结器件 - Google Patents

一种高转换效率异质结器件 Download PDF

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CN110993705A
CN110993705A CN201911352677.0A CN201911352677A CN110993705A CN 110993705 A CN110993705 A CN 110993705A CN 201911352677 A CN201911352677 A CN 201911352677A CN 110993705 A CN110993705 A CN 110993705A
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crystalline silicon
silicon substrate
type crystalline
conversion efficiency
high conversion
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马立云
姚婷婷
李刚
沈洪雪
彭赛奥
金克武
王天齐
杨扬
王东
汤永康
甘治平
时君
黄海青
程国送
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
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    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1246—III-V nitrides, e.g. GaN
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    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10F77/12485—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP comprising nitride compounds, e.g. InGaN
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
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Abstract

本发明公开一种高转换效率异质结器件，包括p型晶硅衬底，所述p型晶硅衬底的底面设有背电极，p型晶硅衬底的顶面由下至上依次层叠有n型发射膜层、透明导电层与前电极，所述p型晶硅衬底的顶面呈凹凸的绒面结构；该异质结器件具有晶格匹配好、界面态密度低的优点，转换效率高，增强异质结光伏器件的整体性能。

Description

一种高转换效率异质结器件
技术领域
本发明涉及光伏器件技术领域，具体是一种高转换效率异质结器件。
背景技术
异质结，两种不同的半导体相接触所形成的界面区域。通常形成异质结的条件是：两种半导体有相似的晶体结构、相近的原子间距和热膨胀系数。异质结常具有两种半导体各自的PN结都不能达到的优良的光电特性，使它适宜于制作超高速开关器件、太阳能电池以及半导体激光器等。
透明氧化物半导体（Transparent oxide semiconductors，TOS）具有可调节的电导率和高光学透明度，在各种光电应用中具有广阔的前景，例如平板显示器，透明场效应晶体管，紫外线（UV）发光二极管，激光器 p-n异质结是实现这些器件的最普遍的构建基块。此外，器件的性能关键取决于能带对准和界面处的内置电势，因此对微观结构的了解异质界面处的原子结构和电子性质是更好地控制性能的最基本步骤；然而，目前的异质结还存在着晶格匹配不好、界面态密度高等缺陷。
发明内容
本发明的目的在于提供一种高转换效率异质结器件，该异质结器件具有晶格匹配好、界面态密度低的优点，转换效率高，增强异质结光伏器件的整体性能。
本发明解决其技术问题所采用的技术方案是：
一种高转换效率异质结器件，包括p 型晶硅衬底，所述p 型晶硅衬底的底面设有背电极，p 型晶硅衬底的顶面由下至上依次层叠有n型发射膜层、透明导电层与前电极，所述p型晶硅衬底的顶面呈凹凸的绒面结构。
进一步的，所述背电极为厚度0.8～1.2μm的Au、Al或Ag薄膜。
进一步的，所述p 型晶硅衬底厚度为200～500μm。
进一步的，所述n型发射膜层为厚度100～300nm的GaAs、AlAs、ZnTe、CdSe、AlSb、AlGaAs、InP、GaN、SiC或CN薄膜。
进一步的，所述透明导电层为厚度400～700nm的GZO、AZO、BZO、IGZO、IZO或ITO薄膜。
进一步的，所述前电极为厚度200～600nm的Cu、Zn、Mo、Ti、Al、Ag或Au薄膜。
本发明的有益效果是：
一、采用经过钝化处理去除氧化层并带有绒面结构的p 型晶硅作为衬底，有利于上层n型发射膜层具有较好的附着粘附，在异质结光伏器件中，p 型晶硅承担了主要的吸光作用，绒面结构更利于对光的吸收，提高光能利用率有利于Jsc、Voc及Eff的提升。
二、n型发射膜层采用GaAs、AlAs、ZnTe、CdSe、AlSb、AlGaAs、InP、GaN、SiC或CN薄膜，使n型发射膜层的禁带宽度及晶格常数均在p 型晶硅以及所选用的透明导电层之间，可以同时作为p 型晶硅与透明导电层的缓冲层，使得异质结光伏器件整体晶格失配小，晶格匹配度好，界面态密度低，转换效率高。
三、透明导电层的作用是收集光生载流子并将其输运到金属电极上，同时，迎光面透明导电层薄膜还必须具备减反射功能，降低器件的表面光反射损失；因此，透明导电层薄膜既要有较好的导电性，又要有较高的透过率；本发明透明导电层可根据n型发射膜层的材料来采用相对应的不同薄膜，调整透明导电层的材料，进而实现优良的光电性能及降低成本。
四、前电极采用Cu、Zn、Mo、Ti、Al、Ag或Au薄膜，可与透明导电层形成良好的欧姆接触并减少载流子界面复合。
附图说明
下面结合附图和实施例对本发明进一步说明：
图1是本发明的结构示意图。
具体实施方式
实施例一
如图1所示，本发明提供一种高转换效率异质结器件，包括p 型晶硅衬底2，所述p 型晶硅衬底2的底面设有背电极1，p 型晶硅衬底2的顶面由下至上依次层叠有n型发射膜层3、透明导电层4与前电极5，所述p 型晶硅衬底2的顶面呈凹凸的绒面结构。
所述背电极1为厚度0.8μm的Al薄膜，p 型晶硅衬底2的厚度为300μm，n型发射膜层3为厚度200nm的GaN薄膜，透明导电层4为厚度400nm的ITO薄膜，前电极5为厚度400nm的Ag薄膜。
对本实施例的异质结光伏器件进行检测及计算，其填充因子FF、短路电流密度Jsc、转换效率Eff依次为42.09%，21.77mA/cm2，10.71%。
实施例二
如图1所示，本发明提供一种高转换效率异质结器件，包括p 型晶硅衬底2，所述p 型晶硅衬底2的底面设有背电极1，p 型晶硅衬底2的顶面由下至上依次层叠有n型发射膜层3、透明导电层4与前电极5，所述p 型晶硅衬底2的顶面呈凹凸的绒面结构。
所述背电极1为厚度1.0μm的Al薄膜，p 型晶硅衬底2的厚度为400μm，n型发射膜层3为厚度150nm的GaN薄膜，透明导电层4为厚度500nm的GZO薄膜，前电极5为厚度500nm的Ag薄膜。
对本实施例的异质结光伏器件进行检测及计算，其填充因子FF、短路电流密度Jsc、转换效率Eff依次为47.35%，24.49mA/cm2，12.05%。
实施例三
如图1所示，本发明提供一种高转换效率异质结器件，包括p 型晶硅衬底2，所述p 型晶硅衬底2的底面设有背电极1，p 型晶硅衬底2的顶面由下至上依次层叠有n型发射膜层3、透明导电层4与前电极5，所述p 型晶硅衬底2的顶面呈凹凸的绒面结构。
所述背电极1为厚度1.2μm的Al薄膜，p 型晶硅衬底2的厚度为500μm，n型发射膜层3为厚度100nm的AlGaAs薄膜，透明导电层4为厚度600nm的GZO薄膜，前电极5为厚度400nm的Ag薄膜。
对本实施例的异质结光伏器件进行检测及计算，其填充因子FF、短路电流密度Jsc、转换效率Eff依次为50.51%，26.13mA/cm2，12.85%。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (6)

1.一种高转换效率异质结器件，其特征在于，包括p 型晶硅衬底，所述p 型晶硅衬底的底面设有背电极，p 型晶硅衬底的顶面由下至上依次层叠有n型发射膜层、透明导电层与前电极，所述p 型晶硅衬底的顶面呈凹凸的绒面结构。
2.根据权利要求1所述的一种高转换效率异质结器件，其特征在于，所述背电极为厚度0.8～1.2μm的Au、Al或Ag薄膜。
3.根据权利要求1所述的一种高转换效率异质结器件，其特征在于，所述p 型晶硅衬底厚度为200～500μm。
4.根据权利要求1所述的一种高转换效率异质结器件，其特征在于，所述n型发射膜层为厚度100～300nm的GaAs、AlAs、ZnTe、CdSe、AlSb、AlGaAs、InP、GaN、SiC或CN薄膜。
5.根据权利要求1所述的一种高转换效率异质结器件，其特征在于，所述透明导电层为厚度400～700nm的GZO、AZO、BZO、IGZO、IZO或ITO薄膜。
6.根据权利要求1所述的一种高转换效率异质结器件，其特征在于，所述前电极为厚度200～600nm的Cu、Zn、Mo、Ti、Al、Ag或Au薄膜。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120097244A1 (en) * 2009-07-03 2012-04-26 Kaneka Corporation Crystalline silicon based solar cell and method for manufacturing thereof
CN102938429A (zh) * 2012-12-21 2013-02-20 国电光伏(江苏)有限公司 一种减反射异质结太阳能电池及其制备方法
KR20130051623A (ko) * 2011-11-10 2013-05-21 엘지전자 주식회사 양면형 태양 전지 및 그의 제조 방법
CN103560155A (zh) * 2013-11-08 2014-02-05 南开大学 一种基于晶体硅材料的化合物半导体异质结太阳电池
CN210692552U (zh) * 2019-12-25 2020-06-05 中建材蚌埠玻璃工业设计研究院有限公司 一种低界面态异质结光伏器件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120097244A1 (en) * 2009-07-03 2012-04-26 Kaneka Corporation Crystalline silicon based solar cell and method for manufacturing thereof
KR20130051623A (ko) * 2011-11-10 2013-05-21 엘지전자 주식회사 양면형 태양 전지 및 그의 제조 방법
CN102938429A (zh) * 2012-12-21 2013-02-20 国电光伏(江苏)有限公司 一种减反射异质结太阳能电池及其制备方法
CN103560155A (zh) * 2013-11-08 2014-02-05 南开大学 一种基于晶体硅材料的化合物半导体异质结太阳电池
CN210692552U (zh) * 2019-12-25 2020-06-05 中建材蚌埠玻璃工业设计研究院有限公司 一种低界面态异质结光伏器件

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