CN110993615A - Ion implantation method and manufacturing method of TFT substrate - Google Patents
Ion implantation method and manufacturing method of TFT substrate Download PDFInfo
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- CN110993615A CN110993615A CN201911192237.3A CN201911192237A CN110993615A CN 110993615 A CN110993615 A CN 110993615A CN 201911192237 A CN201911192237 A CN 201911192237A CN 110993615 A CN110993615 A CN 110993615A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
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Abstract
本发明公开了一种TFT基板的离子注入方法，步骤如下：将掩膜板与TFT基板进行对位，使所述掩膜板上的开口区与所述TFT基板的待掺杂区对齐，所述掩膜板上的非开口区与所述TFT基板的非掺杂区对齐；发射离子束，使所述离子束透过所述掩膜板的开口区对所述TFT基板的待掺杂区进行离子注入。该离子注入方法，无需光刻胶也可精准地对TFT基板进行离子注入。本发明还公开了一种TFT基板的制作方法。
The invention discloses an ion implantation method for a TFT substrate. The steps are as follows: align a mask plate with a TFT substrate, so that the opening area on the mask plate is aligned with the to-be-doped area of the TFT substrate, so that the The non-open area on the mask is aligned with the non-doped area of the TFT substrate; the ion beam is emitted so that the ion beam passes through the opening area of the mask to the to-be-doped area of the TFT substrate Ion implantation is performed. The ion implantation method can precisely perform ion implantation on the TFT substrate without photoresist. The invention also discloses a manufacturing method of the TFT substrate.
Description
Technical Field
The invention relates to the field of TFT (thin film transistor) preparation, in particular to an ion implantation method and a manufacturing method of a TFT substrate.
Background
In many processes for fabricating LTPS-TFTs, ion implantation is required to be performed on the TFT substrate to improve global or local performance of the corresponding functional layer. In the ion doping process, a TFT substrate is generally covered with a photoresist, the photoresist is exposed and developed to expose a region to be doped corresponding to a functional layer, and ions are injected into the exposed region to be doped, however, multiple steps are required for coating, exposing, developing, stripping, and the like of the photoresist, the steps are complex, the production efficiency is low, the production cost is high, and ion beams acting on the photoresist cause surface hardening and ashing of the photoresist, which increases the difficulty in finally stripping the photoresist.
Disclosure of Invention
In order to solve the above-mentioned deficiencies of the prior art, the present invention provides an ion implantation method for a TFT substrate, which can precisely implant ions into the TFT substrate without using a photoresist.
The invention also provides a manufacturing method of the TFT substrate.
The technical problem to be solved by the invention is realized by the following technical scheme:
an ion implantation method of a TFT substrate comprises the following steps:
aligning a mask plate with a TFT substrate to ensure that an opening area on the mask plate is aligned with a to-be-doped area of the TFT substrate, and a non-opening area on the mask plate is aligned with a non-doped area of the TFT substrate;
and emitting ion beams, so that the ion beams penetrate through the opening area of the mask plate to carry out ion implantation on the area to be doped of the TFT substrate.
Further, after the mask plate and the TFT substrate are aligned, the mask plate is placed on the TFT substrate before ion implantation is performed on the TFT substrate.
Further, after the mask plate is placed on the TFT substrate, the mask plate is locked before ion implantation is performed on the TFT substrate, so that the relative position between the mask plate and the TFT substrate is fixed.
Further, after the ion implantation is completed on the TFT substrate, the method further includes the steps of:
and taking the mask plate away from the TFT substrate.
Further, the alignment between the mask plate and the TFT substrate is performed in an alignment chamber or a process chamber.
Further, if the alignment between the mask plate and the TFT substrate is performed in the alignment chamber, before the alignment between the mask plate and the TFT substrate, the TFT substrate is loaded in a slide glass chamber, and then the TFT substrate is transferred from the slide glass chamber to the alignment chamber, and the mask plate is loaded in a support plate chamber, and then the mask plate is transferred from the support plate chamber to the alignment chamber.
Further, after the mask plate and the TFT substrate are aligned, the mask plate and the TFT substrate are sent back to the alignment chamber together.
Further, if the alignment between the mask plate and the TFT substrate is performed in the process chamber, before the alignment between the mask plate and the TFT substrate, the TFT substrate and the mask plate are respectively loaded in a slide glass chamber, and then the TFT substrate and the mask plate are respectively transferred from the slide glass chamber to the alignment chamber.
Further, after the alignment of the mask plate and the TFT substrate is completed, the TFT substrate and the mask plate are respectively sent back to the slide glass chamber, or the mask plate and the TFT substrate are sent back to the slide glass chamber together.
A manufacturing method of a TFT substrate comprises the following steps: manufacturing a shading layer, manufacturing an active layer, carrying out NTFT channel doping on the active layer, carrying out N-type heavy doping on the active layer, manufacturing a grid layer, carrying out P-type heavy doping on the active layer, manufacturing a conducting through hole, manufacturing a source drain layer, manufacturing a planarization layer, manufacturing a common ITO layer, manufacturing a transparent insulating layer and manufacturing a pixel ITO layer; the ion implantation method is adopted in at least one step of NTFT channel doping of the active layer, N-type heavy doping of the active layer and P-type heavy doping of the active layer.
The invention has the following beneficial effects: according to the ion implantation method, the TFT substrate is directly covered and shielded by the mask plate to expose the region to be doped of the TFT substrate, the ion beam penetrates through the mask plate to implant ions into the exposed region to be doped of the TFT substrate, and the TFT substrate can be accurately implanted without photoresist.
Drawings
FIG. 1 is a block diagram illustrating the steps of an ion implantation method according to the present invention;
fig. 2 is a schematic view of an ion implantation apparatus provided in the present invention;
fig. 3 is another schematic view of the ion implantation apparatus shown in fig. 2;
fig. 4 is a schematic view of another ion implantation apparatus provided in the present invention;
FIG. 5 is a schematic view of a conveyor provided in accordance with the present invention;
FIG. 6 is a schematic view of an alignment apparatus provided in the present invention;
fig. 7 is a schematic diagram of a manufacturing method provided by the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
Example one
An ion implantation method of a TFT substrate can be applied to an ion implantation device.
As shown in fig. 2-4, the ion implantation apparatus includes an alignment device 1, a conveying device 2, an ion implantation device 5 and a process chamber 30, wherein the ion implantation device 5 is in communication with the process chamber 30.
As shown in fig. 1, the ion implantation method comprises the following steps:
s100: a mask plate 3 is loaded on the aligning device 1, and a TFT substrate 4 is loaded on the transfer device 2.
As shown in fig. 2 and 3, in the first embodiment, the ion implantation apparatus further includes a slide chamber 10 and an alignment chamber 20, wherein the alignment chamber 20 is in communication with the process chamber 30; the slide chamber 10 and the carrier plate chamber 40 are respectively communicated with the alignment chamber 20.
The TFT substrate 4 is loaded on the conveyor 2 in the slide chamber 10 before alignment, and unloaded from the conveyor 2 in the slide chamber 10 after ion implantation; the masks 3 are loaded on the alignment apparatus 1 in the carrier chamber 40 before alignment, and unloaded from the alignment apparatus 1 in the carrier chamber 40 after ion implantation.
In a second embodiment, as shown in fig. 4, the ion implantation apparatus includes only the slide chamber 10, without a dedicated alignment chamber 20 and a carrier chamber 40, the slide chamber 10 being in communication with the process chamber 30.
The TFT substrate 4 is loaded on the conveyor 2 in the slide chamber 10 before alignment, and unloaded from the conveyor 2 in the slide chamber 10 after ion implantation; meanwhile, the slide glass chamber 10 doubles as the carrier plate chamber 40, and the mask plate 3 is loaded on the aligning device 1 in the slide glass chamber 10 before alignment, and unloaded from the aligning device 1 in the slide glass chamber 10 after ion implantation.
S101: the alignment device 1 and the conveying device 2 respectively drive the mask plate and the TFT substrate 4 to move so as to align the mask plate 3 with the TFT substrate 4, so that an opening area on the mask plate 3 is aligned with a region to be doped of the TFT substrate 4, and a non-opening area on the mask plate 3 is aligned with a non-doped region of the TFT substrate 4.
In this step S101, the alignment device 1 and the transfer device 2 respectively drive the mask plate 3 and the TFT substrate 4 to move, so as to complete alignment between the mask plate 3 and the TFT substrate 4.
In step S101 of the first embodiment, as shown in fig. 2 and 3, before aligning the mask plate 3 and the TFT substrate 4, the alignment device 1 drives the mask plate 3 to move to transfer the mask plate 3 from the carrier chamber 40 into the alignment chamber 20, and the transfer device 2 drives the TFT substrate 4 to move to transfer the TFT substrate 4 from the carrier chamber 10 into the alignment chamber 20, so as to perform alignment between the mask plate 3 and the TFT substrate 4 in the alignment chamber 20.
In step S101 of the second embodiment, as shown in fig. 4, before aligning the mask plate 3 and the TFT substrate 4 in the process chamber 30, the alignment device 1 drives the mask plate 3 to move to transfer the mask plate 3 from the slide glass chamber 10 into the process chamber 30, and the transfer device 2 drives the TFT substrate 4 to move to transfer the TFT substrate 4 from the slide glass chamber 10 into the process chamber 30.
As shown in fig. 6, the alignment device 1 includes an alignment moving mechanism 11, and a grabbing mechanism 12 and an alignment sensing mechanism disposed on the alignment moving mechanism 11, wherein
The alignment moving mechanism 11 is configured to drive the grabbing mechanism 12 and the alignment sensing mechanism to translate on an XY plane and lift in a Z direction, the XY plane is parallel to the TFT substrate 4 plane, the Z direction is perpendicular to the substrate plane of the TFT substrate 4, and the alignment moving mechanism 11 may be a three-axis moving mechanism/mechanical arm disposed in the carrier chamber 40 and the alignment chamber 20 as shown in fig. 2 and 3 or a three-axis moving mechanism/mechanical arm disposed in the slide chamber 10 and the process chamber 30 as shown in fig. 4;
the grabbing mechanism 12 is used for grabbing the mask plate 3 and comprises a plurality of suckers and/or a plurality of electromagnets;
the alignment sensing mechanism is used for identifying and aligning alignment marks between the mask plate 3 and the TFT substrate 4 and comprises a plurality of alignment cameras 13 and/or a plurality of alignment sensors 14.
As shown in fig. 5, the transfer device 2 includes a transfer moving mechanism 21 and a substrate carrier 22 provided on the transfer moving mechanism 21, wherein
The conveying and moving mechanism 21 is configured to drive the substrate carrier 22 to move between the slide chamber 10, the alignment chamber 20, and the process chamber 30 or between the slide chamber 10 and the process chamber 30, and may be a slide moving mechanism disposed in the slide chamber 10, the alignment chamber 20, and the process chamber 30 as shown in fig. 2 and 3 or a slide moving mechanism disposed in the slide chamber 10 and the process chamber 30 as shown in fig. 4;
the substrate carrier 22 is used for loading the TFT substrate 4 and has a carrying groove 221 for placing the TFT substrate 4.
The TFT substrate 4 is placed in the carrying groove 221 in step S100.
Preferably, in step S101, after the mask 3 and the TFT substrate 4 are aligned, the mask 3 is placed on the TFT substrate 4 before the TFT substrate 4 is subjected to ion implantation.
As shown in fig. 5, the conveying device 2 further includes a locking mechanism disposed on the conveying and moving mechanism 21, and the conveying and moving mechanism 21 moves between the slide chamber 10, the alignment chamber 20, and the process chamber 30 or moves between the slide chamber 10 and the process chamber 30; the locking mechanism is used for locking the mask plate 3 on the substrate carrier 22 so as to fix the relative position between the mask plate 3 and the TFT substrate 4, and comprises a self-locking buckle 231 and an unlocking driving structure 232 for connecting and driving the self-locking buckle 231 to unlock.
The substrate carrier 22 further has a peripheral protrusion 222 for supporting the mask 3 so that the mask 3 and the TFT substrate 4 maintain a certain distance.
The self-locking fastener 231 is preferably an elastic fastener (such as a spring fastener), one end of which presses the mask 3 onto the substrate carrier 22; after the mask plate 3 and the TFT substrate 4 are aligned, the alignment device 1 presses the mask plate 3 into the space between the self-locking fastener 231 and the peripheral protrusion 222, and the self-locking fastener 231 automatically compresses and locks the mask plate 3 to the peripheral protrusion 222 by using its own elasticity.
Preferably, in step S101, the alignment device 1 leaves the process chamber 30 after the mask 3 is placed on the TFT substrate 4, and returns to the alignment chamber 20 as shown in fig. 2 and 3 or returns to the slide chamber 10 as shown in fig. 4.
S102: the ion implantation equipment emits ion beams into the process chamber 30, so that the ion beams penetrate through the opening area of the mask plate 3 to perform ion implantation on the area to be doped of the TFT substrate 4.
The method further includes, after step S102 of the first embodiment as shown in fig. 2 and 3:
s103: the conveying device 2 sends the mask plate 3 and the TFT substrate 4 back to the alignment chamber 20 together, the unlocking driving structure 232 drives the self-locking buckle 231 to loosen the mask plate 3, the alignment device 1 takes the mask plate 3 away, and the conveying device 2 sends the TFT substrate 4 back to the slide glass chamber 10.
The method further includes, after step S102 of the second embodiment shown in fig. 4:
s103: the unlocking driving structure 232 drives the self-locking buckle 231 to loosen the mask plate 3, the alignment device 1 takes the mask plate 3 away, and the conveying device 2 and the alignment device 1 respectively send the TFT substrate 4 and the mask plate 3 back to the slide glass chamber 10; or, the conveying device 2 sends the mask plate 3 and the TFT substrate 4 back to the slide glass chamber 10 together, the unlocking driving structure 232 drives the self-locking fastener 231 to release the mask plate 3, and the aligning device 1 takes away the mask plate 3.
The unlocking driving structure 232 includes a lifter; the middle part of the self-locking buckle 231 is pivoted on the substrate carrier 22, one end of the self-locking buckle compresses the mask plate 3 on the substrate carrier 22, the other end of the self-locking buckle is rotatably connected with the lifter, and one end of the self-locking buckle compressing the mask plate 3 swings under the driving of the lifter so as to loosen the mask plate 3.
Example two
As shown in fig. 7, a method for manufacturing a TFT substrate includes the steps of: manufacturing a shading layer, manufacturing an active layer, carrying out NTFT channel doping on the active layer, carrying out N-type heavy doping on the active layer, manufacturing a grid layer, carrying out P-type heavy doping on the active layer, manufacturing a conducting through hole, manufacturing a source drain layer, manufacturing a planarization layer, manufacturing a common ITO layer, manufacturing a transparent insulating layer and manufacturing a pixel ITO layer; the ion implantation method is adopted in at least one step of NTFT channel doping of the active layer, N-type heavy doping of the active layer and P-type heavy doping of the active layer.
The above-mentioned embodiments only express the embodiments of the present invention, and the description is more specific and detailed, but not understood as the limitation of the patent scope of the present invention, but all the technical solutions obtained by using the equivalent substitution or the equivalent transformation should fall within the protection scope of the present invention.
Claims (10)
1. An ion implantation method of a TFT substrate is characterized by comprising the following steps:
aligning a mask plate with a TFT substrate to ensure that an opening area on the mask plate is aligned with a to-be-doped area of the TFT substrate, and a non-opening area on the mask plate is aligned with a non-doped area of the TFT substrate;
and emitting ion beams, so that the ion beams penetrate through the opening area of the mask plate to carry out ion implantation on the area to be doped of the TFT substrate.
2. The ion implantation method of the TFT substrate according to claim 1, wherein after the alignment between the mask and the TFT substrate is completed, the mask is placed on the TFT substrate before ion implantation is performed on the TFT substrate.
3. The ion implantation method of the TFT substrate as claimed in claim 2, wherein after the mask is placed on the TFT substrate, the mask is locked to fix a relative position between the mask and the TFT substrate before the TFT substrate is subjected to ion implantation.
4. The ion implantation method of a TFT substrate as set forth in claim 2 or 3, further comprising the steps of, after the ion implantation is completed into the TFT substrate:
and taking the mask plate away from the TFT substrate.
5. The ion implantation method of the TFT substrate as claimed in claim 1, wherein the alignment between the mask and the TFT substrate is performed in an alignment chamber or a process chamber.
6. The ion implantation method of the TFT substrate according to claim 5, wherein if the alignment between the mask plate and the TFT substrate is performed in the alignment chamber, before the alignment between the mask plate and the TFT substrate, the TFT substrate is loaded in a loading chamber, and then the TFT substrate is transferred from the loading chamber to the alignment chamber, and the mask plate is loaded in a loading chamber, and then the mask plate is transferred from the loading chamber to the alignment chamber.
7. The ion implantation method of the TFT substrate as claimed in claim 6, wherein after the mask and the TFT substrate are aligned, the mask and the TFT substrate are returned to the alignment chamber together.
8. The ion implantation method of the TFT substrate as claimed in claim 5, wherein if the alignment between the mask plate and the TFT substrate is performed in the process chamber, before the alignment between the mask plate and the TFT substrate, the TFT substrate and the mask plate are respectively loaded in a carrying chamber, and then the TFT substrate and the mask plate are respectively transferred from the carrying chamber into the alignment chamber.
9. The ion implantation method of the TFT substrate as claimed in claim 8, wherein after the alignment between the mask and the TFT substrate is completed, the TFT substrate and the mask are respectively returned to the carrier chamber, or the mask and the TFT substrate are returned to the carrier chamber together.
10. A manufacturing method of a TFT substrate comprises the following steps: manufacturing a shading layer, manufacturing an active layer, carrying out NTFT channel doping on the active layer, carrying out N-type heavy doping on the active layer, manufacturing a grid layer, carrying out P-type heavy doping on the active layer, manufacturing a conducting through hole, manufacturing a source drain layer, manufacturing a planarization layer, manufacturing a common ITO layer, manufacturing a transparent insulating layer and manufacturing a pixel ITO layer; the method is characterized in that the ion implantation method of any one of claims 1 to 9 is adopted in at least one step of NTFT channel doping of the active layer, N-type heavy doping of the active layer and P-type heavy doping of the active layer.
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| CN201911192237.3A CN110993615A (en) | 2019-11-28 | 2019-11-28 | Ion implantation method and manufacturing method of TFT substrate |
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