CN110963460B - Two-dimensional material cleavage method - Google Patents

Abstract

A two-dimensional material cleavage method, comprising: forming an insulating film coating on the surface of a parent layered crystal; pasting a heat release tape on the surface of the insulating film coating; lifting the heat release tape to make the heat release tape adhere to the insulating film coating, and The surface of the insulating film coating has intermediate layered crystals composed of part of the parent layered crystals; the adhesive seal is covered on the surface of the heat release tape, and the adhesive seal covers the insulating film coating and the intermediate layered crystals; heat treatment of the heat release tape to release the heat The tape is separated from the adhesive stamp, and the heat release tape is separated from the insulating film coating; after that, the adhesive stamp, the interlayer crystal and the insulating film coating are pressed on the substrate, and the insulating film coating is in contact with the substrate; after that, lift up The seal is adhered, and the surface of the adhering seal takes away part of the intermediate layered crystals, so that a two-dimensional material is formed on the surface of the insulating film coating. The method can prepare large-area and high-quality two-dimensional materials and expand the library of two-dimensional materials.

Description

Two-dimensional material cleavage method

technical field

The invention relates to the technical field of nanomaterial preparation, in particular to a two-dimensional material cleavage method.

Background technique

Two-dimensional materials refer to crystalline materials consisting of a single atomic layer or several atomic layers. The vast majority of 2D materials can be obtained from their corresponding 3D parent materials. For example, a single atomic layer of carbon, known as graphene, can be derived from layered graphite. In graphite, the carbon between atomic layers is connected by van der Waals forces, which are weaker than covalent or ionic bonds, so graphite can be easily separated from the layers to obtain a monolayer of Graphene is like taking a page out of a book. In 2004, Geim's group used scotch tape to mechanically cleavage graphite and obtained single-layer graphene for the first time. This mechanical cleavage method is suitable for many layered materials like graphite, which has made the field of two-dimensional materials unprecedented development.

Two-dimensional materials have many different physical properties from three-dimensional parent materials, and two-dimensional materials are more sensitive to external regulation and easier to be regulated, making them unique in applications such as spintronics and optoelectronics. possessed superior properties. In addition, the new structure formed by stacking two-dimensional materials, namely van der Waals heterojunction, has even more unknown excellent properties, which greatly broadens the existing material system.

However, there is an urgent need for a method for preparing large-area and high-quality two-dimensional materials that can be applied to more materials.

SUMMARY OF THE INVENTION

The problem solved by the present invention is to provide a two-dimensional material cleavage method, so as to realize the separation of large-area and high-quality two-dimensional materials from more kinds of parent layered materials, and to expand the two-dimensional material library.

In order to solve the above problems, the present invention provides a two-dimensional material cleavage method, comprising: providing a parent layered crystal, a heat release tape, an adhesive stamp and a substrate; forming an insulating film coating on the surface of the parent layered crystal; Paste heat release tape on the surface of the insulating film coating; lift up the heat release tape to make the heat release tape adhere to the insulating film coating, and the surface of the insulating film coating has an intermediate layer composed of part of the parent layered crystals The surface of the heat release tape is covered with an adhesive seal, and the adhesive seal covers the insulating film coating and the intermediate layered crystal; heat treatment of the heat release tape to make the heat release tape and the The adhesive seal, and the heat release tape are separated from the insulating film coating; after heat-treating the heat release tape, the adhesive seal, the intermediate layered crystal and the insulating film coating are pressed on the substrate, And the insulating film coating is in contact with the substrate; after pressing the adhesive seal, the intermediate layered crystal and the insulating film coating on the substrate, lift up the adhesive seal, and the adhesive seal Part of the intermediate layered crystal is taken away from the surface, so that a two-dimensional material is formed on the surface of the insulating film coating.

Optionally, the parent layered crystal has opposite first faces and second faces; the two-dimensional material cleavage method further includes: providing an adhesive tape; before forming an insulating film coating on the surface of the parent layered crystal, pasting the parent layered crystals on the surface of the tape, with the first surface in contact with the tape; after pasting the parent layered crystals on the surface of the tape, forming on the second surface of the parent layered crystals The insulating film is coated.

Optionally, the material of the ultra-vacuum adhesive tape includes polyimide film material, acrylic adhesive material or silicone adhesive material.

Optionally, the step of pasting the precursor layered crystals on the surface of the tape is performed in an inert gas environment.

Optionally, the material of the insulating thin film coating includes aluminum oxide, silicon oxide, magnesium oxide or titanium dioxide.

Optionally, the process of forming the insulating thin film coating includes an evaporation process, a sputtering process or an electroplating process.

Optionally, the material of the insulating film coating is aluminum oxide; the process for forming the insulating film coating is an evaporation process, and the parameters include: the partial pressure of oxygen in the evaporation environment is 1E-4 mbar to 2E-4 mbar , the evaporation source is aluminum.

Optionally, the thickness of the insulating film coating is more than 50 nanometers.

Optionally, the thickness of the insulating film coating is 50 nanometers to 200 nanometers.

Optionally, the step of forming an insulating thin film coating on the surface of the parent layered crystal is performed in a high vacuum environment.

Optionally, the step of pasting the heat release tape on the surface of the insulating film coating is performed in an inert gas environment; the step of lifting the heat release tape is performed in an inert gas environment; the surface of the heat release tape is covered and adhered The step of stamping is carried out in an inert gas environment; the step of heat-treating the heat release tape is carried out in an inert gas environment; the step of pressing the adhering stamp, the intermediate layered crystal and the insulating film coating on the substrate is carried out in an inert gas environment; the step of lifting the adhesive seal was carried out in an inert gas environment.

Optionally, the material for adhering the stamp includes a polymer.

Optionally, the polymer includes polydimethylsiloxane.

Optionally, the temperature for heat-treating the heat release tape is 115 degrees Celsius to 125 degrees Celsius.

Optionally, before pressing the adhesive stamp, the intermediate layered crystal and the insulating film coating on the substrate, the method further includes: cleaning the surface of the substrate.

Optionally, the cleaning treatment includes plasma treatment.

Optionally, the plasma treatment uses oxygen plasma.

Optionally, the two-dimensional material includes monolayer MoS ₂ , monolayer TaS ₂ , monolayer Fe ₃ GeTe ₂ , monolayer VSe ₂ , monolayer FeSe, monolayer CrI ₃ , monolayer _Cr2Ge2Te6 , monolayer _WSe2 , monolayer _WS2 , _{monolayer WTe2} , or _monolayer black phosphorus.

Optionally, the lateral length of the two-dimensional material is more than 100 microns.

Compared with the prior art, the technical solution of the present invention has the following advantages:

In the two-dimensional material cleavage method provided by the technical solution of the present invention, the insulating thin film coating is formed on the surface of the parent layered crystal, the insulating thin film coating and the parent layered crystal material have great adhesion, and the insulating thin film coating Can have a large contact area with the parent layered crystal. Due to the great adhesion between the insulating film coating and the parent layered crystal material, the insulating film coating and the intermediate layered crystal have great adhesion. Due to the great adhesion between the insulating film coating and the intermediate layered crystal, after the adhesive seal is lifted, the surface of the insulating film coating can form a two-dimensional material with high quality, which is embodied in: two The homogeneity of 2D materials is higher, and the defects of 2D materials are less. Since the insulating film coating has a larger area, a large-area two-dimensional material can be formed on the surface of the insulating film coating. The insulating film coating is adhered to the surface of the substrate, so that the two-dimensional material is fixed on the substrate, so the formation of the two-dimensional material is not limited by the substrate material, so that the types of the two-dimensional material can be broadened. Since the liquid phase method is not used, the two-dimensional materials will not be exposed to organic solvents during the preparation process, so this method is suitable for the fabrication of two-dimensional materials sensitive to organic solvents, and the types of prepared two-dimensional materials can be broadened.

Secondly, the insulating film coating is an insulating material, and the insulating film coating will not affect the measurement process of the electrical transport properties of the two-dimensional material. The insulating film coating does not need to be removed by etching, so there is no problem of etching damage to the two-dimensional material, so that the quality of the two-dimensional material is improved.

Description of drawings

1 is a flow chart of a two-dimensional material cleavage process in an embodiment of the present invention;

2 to 13 are schematic structural diagrams of a two-dimensional material cleavage process in an embodiment of the present invention.

Detailed ways

As mentioned in the background art, the two-dimensional materials formed by the prior art have poor performance.

Methods for preparing two-dimensional materials include mechanical cleavage, liquid cleavage, chemical vapor deposition and molecular beam epitaxy.

Taking the preparation of two-dimensional material as graphene as an example, the mechanical cleavage method is to press the graphite on the surface of the substrate material with a transparent tape to peel off, and finally obtain a single-layer or few-layer graphite. This method is mainly limited by the van der Waals force between the tape and the two-dimensional material, and the van der Waals force between the two-dimensional material and the substrate, so the prepared two-dimensional materials have fewer types, The area is small, and residual glue easily exists on the surface of the two-dimensional material, which affects the quality of the two-dimensional material.

Another method is to use the strong adhesion between gold and the two-dimensional material to cleavage the two-dimensional material, but in this method, if the gold is retained at the end, the conductivity of gold is not easy for the further electrical conductivity of the two-dimensional material. The measurement of transport properties usually requires the removal of gold by etching, so the surface of the obtained 2D material is susceptible to contamination and damage.

Liquid phase cleavage uses ultrasonic vibration to separate layered matrix materials from the interlayers. The two-dimensional materials prepared by the liquid phase cleavage method also have the disadvantage of small area. Moreover, the two-dimensional materials are exposed to organic solvents during the preparation process, so this method is not suitable for two-dimensional materials sensitive to organic solvents, and the types of prepared two-dimensional materials are limited.

Chemical vapor deposition enables the synthesis of large-area two-dimensional materials. However, the two-dimensional material thin film is prone to the problem of poor uniformity, which affects the quality of the two-dimensional material.

Molecular beam epitaxy can synthesize large-area two-dimensional materials, but since the materials synthesized by this method often need to match the lattice of the substrate used, and its physical properties will be affected by the substrate, the synthesized two-dimensional materials types are limited.

At present, there is no method for preparing large-area and high-quality two-dimensional materials that can be applied to more materials.

On this basis, the present invention provides a two-dimensional material cleavage method, please refer to FIG. 1, including the following steps:

S01: Provide parent layered crystals, thermal release tapes, adhesive stamps and substrates;

S02: forming an insulating thin film coating on the surface of the parent layered crystal;

S03: paste heat release tape on the surface of the insulating film coating;

S04: lift up the heat release tape, make the heat release tape adhere to the insulating film coating, and the surface of the insulating film coating has intermediate layered crystals composed of part of the parent layered crystals;

S05: Cover the surface of the heat release tape with an adhesive seal, and the adhesive seal covers the insulating film coating and the intermediate layered crystal;

S06: heat-treating the heat release tape to separate the heat release tape from the adhesive seal, and the heat release tape and the insulating film coating;

S07: after heat-treating the heat release tape, press the adhesive seal, the intermediate layered crystal and the insulating film coating on the substrate, and the insulating film coating is in contact with the substrate;

S08: After pressing the adhesive seal, the intermediate layered crystal and the insulating film coating on the substrate, lift up the adhesive seal, and the surface of the adhesive seal takes away part of the intermediate layered crystal, so that the A two-dimensional material is formed on the surface of the insulating film coating.

The method can realize the separation of large-area and high-quality two-dimensional materials from more kinds of parent layered materials, and broaden the library of two-dimensional materials.

In order to make the above objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

2 to 13 are schematic structural diagrams of a two-dimensional material cleavage process in an embodiment of the present invention.

Referring to Figure 2, a parent layered crystal 100 is provided.

The parent layered crystal 100 is a three-dimensional structural material. The subsequent two-dimensional material is exfoliated from the parent layered crystal 100 .

The material of the parent layered crystal 100 includes MoS ₂ , TaS ₂ , Fe ₃ GeTe ₂ , VSe ₂ , FeSe, CrI ₃ , Cr ₂ Ge ₂ Te ₆ , WSe ₂ , WS ₂ , WTe ₂ or black phosphorus.

In this embodiment, the material of the parent layered crystal 100 is Fe ₃ GeTe ₂ , and the subsequently formed two-dimensional material is a single-layer Fe ₃ GeTe ₂ as an example for description.

In other embodiments, the material of the parent layered crystal may also be other materials.

The parent layered crystal 100 has opposing first faces 101 and second faces 102 .

The first face 101 and the second face 102 are parallel to the plane of the atomic distribution of each layer in the parent layered crystal 100 .

Referring to Figure 3, tape 110 is provided.

The material of the adhesive tape 110 includes polyimide film material, acrylic adhesive material or silicone adhesive material. The material of the adhesive tape 110 can also be other materials.

In this embodiment, the material of the adhesive tape 110 includes polyimide film material, acrylic adhesive material or silicone adhesive material. The advantage is that the adhesive tape 110 can be used in an ultra-high vacuum environment. When the adhesive tape 110 is used in the ultra-high vacuum environment, the adhesive tape 110 will not release air bubbles to avoid contamination of the ultra-high vacuum environment.

Referring to FIG. 4 , the parent layered crystal 100 is pasted on the surface of the tape 110 , and the first surface 101 is in contact with the tape 110 .

In this embodiment, the step of pasting the parent layered crystal 100 on the surface of the tape 110 is performed in an inert gas environment, which has the advantage of avoiding contamination of the parent layered crystal 100; even if the chemical properties of the parent layered crystal 100 It is very unstable, and it can also ensure that the parent layered crystal 100 is not polluted by the process environment.

The inert gas includes argon.

Referring to FIG. 5 , after the parent layered crystal 100 is pasted on the surface of the tape 110 , an insulating thin film plating layer 130 is formed on the surface of the parent layered crystal 100 .

Specifically, an insulating thin film coating layer 130 is formed on the second surface 102 of the parent layered crystal 100 .

The material of the insulating thin film coating layer 130 includes aluminum oxide, silicon oxide, magnesium oxide or titanium dioxide. The material of the insulating film coating 130 may also be other insulating materials.

In this embodiment, when the material of the insulating thin film coating layer 130 is aluminum oxide, the adhesion between the insulating thin film coating layer 130 and the parent layered crystal 100 is greater.

The process of forming the insulating thin film coating layer 130 includes an evaporation process, a sputtering process or an electroplating process.

The step of forming the insulating thin film coating layer 130 on the surface of the parent layered crystal 100 is performed in a high vacuum environment, and the high vacuum environment includes a rough vacuum environment or an ultra-high vacuum environment.

In this embodiment, the material of the insulating thin film coating layer 130 is aluminum oxide; the process of forming the insulating thin film coating layer 130 is an evaporation process, and the parameters include: the partial pressure of oxygen in the evaporation environment is 1E-4 mbar～2E- 4 mbar, the evaporation source is aluminum. The equipment used for forming the insulating thin film coating layer 130 is a thermal evaporation coating machine.

In this embodiment, the partial pressure of oxygen in the evaporation environment is 1E-4 mbar to 2E-4 mbar, so that the material of the evaporation source can be completely oxidized.

In this embodiment, the thickness of the insulating thin film coating layer 130 is more than 50 nanometers. The significance of the thickness of the insulating thin film coating layer 130 in this range is that if the thickness of the insulating thin film coating layer 130 is less than 50 nanometers, the thickness of the insulating thin film coating layer 130 will be removed later. In the process of heat releasing the tape, the insulating film coating 130 is easily broken, which reduces the area of the finally formed two-dimensional material.

In a specific embodiment, the thickness of the insulating thin film coating layer 130 is 50 nanometers to 200 nanometers. The thickness of the insulating thin film coating layer 130 is below 200 nanometers, which reduces the cost of the insulating thin film coating layer 130 and satisfies the use requirements.

The insulating thin film coating 130 is formed on the surface of the parent layered crystal 100, the insulating thin film coating 130 and the material of the parent layered crystal 100 have great adhesion, and the insulating thin film coating 130 and the parent layered crystal 100 have great adhesion. contact area.

In the present embodiment, after the insulating film coating 130 is formed, the subsequent steps are all performed in an inert gas environment, which can prevent the surface of the insulating film coating 130 from adsorbing hydrogen and reduce the adhesion of the insulating film coating 130 to the parent layered crystal 100 material. sex.

Referring to FIG. 6 , a heat release tape 140 is provided; the heat release tape 140 is pasted on the surface of the insulating film coating 130 .

The adhesiveness of the heat release tape 140 can disappear under the condition of heat treatment.

In this embodiment, the step of pasting the heat release tape 140 on the surface of the insulating film coating 130 is performed in an inert gas environment.

Referring to FIG. 7 , after the thermal release tape 140 is pasted on the surface of the insulating film coating 130 , the thermal release tape 140 is lifted up, so that the thermal release tape 140 is adhered to the insulating film coating 130 , and the surface of the insulating film coating 130 is removed. There is an intermediate layered crystal 150 composed of part of the parent layered crystal 100 .

In this embodiment, the step of peeling off the heat release adhesive tape 140 is performed in an inert gas environment.

Due to the strong adhesion between the insulating film coating 130 and the parent layered crystal 100 , the insulating film coating 130 will take away the material of the parent layered crystal 100 during the process of lifting the thermal release tape 140 . , so that the surface of the insulating film plating layer 130 has an intermediate layered crystal 150 composed of part of the parent layered crystal 100 .

The thickness uniformity of the intermediate layered crystal 150 varies from place to place, for example, there are more atomic layers of material in certain regions and a single atomic layer of material in certain regions. In addition, the intermediate layered crystal 150 will subsequently undergo a thermal process of heat-treating the thermal release tape 140 , and the atoms on the surface of the intermediate layered crystal 150 will be deteriorated. Therefore, the intermediate layered crystal 150 cannot be used as a final high-quality two-dimensional material.

Since the insulating thin film coating 130 has great adhesion to the parent layered crystal 100 material, the insulating thin film coating 130 and the intermediate layered crystal 150 have great adhesion.

Referring to FIG. 8, an adhesive seal 160 is provided; after peeling off the heat release tape 140, the adhesive seal 160 is covered on the surface of the heat release tape 140, and the adhesive seal 160 covers the insulating film plating layer 130 and all the The intermediate layered crystal 150 is described.

The material of the adhesive stamp 160 includes a polymer. The polymer includes polydimethylsiloxane.

In this embodiment, the step of covering the adhesive stamp 160 on the surface of the heat release tape 140 is performed in an inert gas environment.

Referring to FIG. 9 , the heat release tape 140 is heat-treated to separate the heat release tape 140 from the adhesive stamp 160 and the heat release tape 140 from the insulating film coating 130 .

The heat release tape 140 is heat-treated to release the adhesiveness of the heat release tape 140, thereby separating the heat release tape 140 from the adhesive stamp 160 and the heat release tape 140 from the insulating film coating 130 .

In this embodiment, the step of heat-treating the heat release tape 140 is performed in an inert gas environment.

In a specific embodiment, the temperature of heat-treating the heat release adhesive tape 140 is 115 degrees Celsius to 125 degrees Celsius, such as 120 degrees Celsius. The advantage of this is that: the temperature of the heat treatment is below 125 degrees Celsius, so that the adhesive seal 160 can withstand the temperature of the heat treatment, so as to avoid the performance of the adhesive seal 160 from being affected; the temperature of the heat treatment is above 115 degrees Celsius, which is beneficial to The heat release tape 140 is detackified.

Referring to Figure 10, a substrate 170 is provided.

In this embodiment, the material of the substrate 170 is silicon dioxide.

In other embodiments, the material of the substrate may be aluminum oxide or silicon wafer.

Referring to FIG. 11 , the surface of the substrate 170 is cleaned.

The cleaning treatment includes plasma treatment.

The surface of the substrate 170 is cleaned to remove impurities on the surface of the substrate 170 , so as to improve the cleanliness of the surface of the substrate 170 , which can improve the adhesion between the subsequent insulating film plating layer 130 and the substrate 170 .

In this embodiment, oxygen plasma is used for the plasma treatment.

In this embodiment, oxygen plasma is used instead of other plasmas to clean the surface of the substrate 170 . The advantage is that the oxygen plasma can clean the surface of the substrate 170 and activate the surface of the substrate 170 to increase its viscosity.

In other embodiments, the surface of the substrate may not be cleaned.

Referring to FIG. 12 , the adhesive stamp 160 , the interlayer crystal 150 and the insulating thin film coating 130 are pressed on the substrate 170 , and the insulating thin film coating 130 is in contact with the substrate 170 .

In this embodiment, after the thermal release tape 140 is heat-treated and the surface of the substrate 170 is cleaned, the adhesive stamp 160, the interlayer crystal 150 and the insulating film coating 130 are pressed against the surface of the substrate 170. on the substrate 170 , and the adhesive stamp 160 and the insulating film coating 130 are respectively in contact with the substrate 170 .

In this embodiment, the step of pressing the adhesive stamp 160 , the intermediate layered crystal 150 and the insulating film coating 130 on the substrate 170 is performed in an inert gas environment.

Referring to FIG. 13 , after pressing the adhesive seal 160 , the interlayer crystal 150 and the insulating film coating 130 on the substrate 170 , the adhesive seal 160 is lifted up, and the surface of the adhesive seal 160 is taken away Part of the intermediate layered crystal 150 forms a two-dimensional material 180 on the surface of the insulating film coating 130 .

In this embodiment, the speed of lifting the adhesive seal 160 is faster, which has the advantage of increasing the viscosity between the adhesive seal 160 and the intermediate layered crystal 150 and increasing the possibility of forming the two-dimensional material 180 .

In this embodiment, the step of lifting the adhesive seal 160 is performed in an inert gas environment.

The two-dimensional material 180 includes a single layer of MoS ₂ , a single layer of TaS ₂ , a single layer of Fe ₃ GeTe ₂ , a single layer of VSe ₂ , a single layer of FeSe, a single layer of CrI ₃ , and a single layer of Cr ₂ Ge _2Te6 , monolayer _WSe2 , monolayer _WS2 , _{monolayer WTe2} , or monolayer black phosphorus.

In this embodiment, the two-dimensional material 180 is taken as an example of Fe ₃ GeTe ₂ with a single layer.

Existing mechanical dissociation methods only dissociate part of two-dimensional materials relatively easily, such as graphene, boron nitride and MoS ₂ , and the area of the obtained two-dimensional materials is small. Existing mechanical dissociation methods are difficult to dissociate 2D materials such as Fe ₃ GeTe ₂ , TaS ₂ , VSe ₂ , FeSe, CrI ₃ , Cr ₂ Ge ₂ Te ₆ , WSe ₂ , WS ₂ , WTe ₂ or black phosphorus materials .

The method of this embodiment can not only dissociate to obtain two-dimensional materials such as MoS ₂ materials, but also dissociate to obtain Fe ₃ GeTe ₂ , TaS ₂ , VSe ₂ , FeSe, CrI ₃ , Cr ₂ Ge ₂ Te ₆ , WSe ₂ , Two-dimensional materials of WS ₂ , WTe ₂ or black phosphorus materials, and these two-dimensional materials can be easily obtained.

In this embodiment, the lateral length of the two-dimensional material 180 is more than 100 microns. The lateral length refers to the length of the two-dimensional material 180 in the plane of the atomic distribution of the two-dimensional material 180 .

Since the insulating film coating layer 130 and the intermediate layered crystal 150 have great adhesion, after the adhesive seal 160 is lifted off, the surface of the insulating film coating layer 130 can form a two-dimensional material 180 with high quality. Specifically, the uniformity of the two-dimensional material 180 is high, and the defects of the two-dimensional material 180 are less.

Since the insulating thin film coating layer 130 has a larger area, a large area two-dimensional material 180 can be formed on the surface of the insulating thin film coating layer 130 .

In this embodiment, the insulating thin film coating layer 130 is adhered to the surface of the substrate 170, so that the two-dimensional material 180 is fixed on the substrate 170, so the formation of the two-dimensional material 180 is not limited by the material of the substrate 170, so that the two-dimensional material 180 is not limited by the material of the substrate 170. The kinds of materials 180 can be widened.

In this embodiment, the liquid phase method is not used, so the two-dimensional material 180 will not be exposed to organic solvents during the preparation process, so the method of this embodiment is suitable for the preparation of the two-dimensional material 180 sensitive to organic solvents. The types of the 2D material 180 can be broadened, and the quality of the 2D material 180 will not be affected by the liquid phase solvent.

In this embodiment, the insulating thin film coating 130 is an insulating material, and the insulating thin film coating 130 will not affect the measurement process of the electrical transport properties of the two-dimensional material 180 .

In this embodiment, the insulating film coating 130 does not need to be removed by etching, so there is no problem of etching damage to the two-dimensional material 180 , so that the quality of the two-dimensional material 180 is improved.

Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the claims.

Claims (17)

1. a two-dimensional material cleavage method, is characterized in that, comprises: Provide parent layered crystals, thermal release tapes, adhesive stamps and substrates; An insulating thin film coating is formed on the surface of the parent layered crystal, and the material of the insulating thin film coating includes aluminum oxide, silicon oxide, magnesium oxide or titanium dioxide; Paste heat release tape on the surface of the insulating film coating; Lifting up the heat release tape, making the heat release tape adhere to the insulating film coating, and the surface of the insulating film coating has intermediate layered crystals composed of part of the parent layered crystals; An adhesive seal is covered on the surface of the heat release tape, and the adhesive seal covers the insulating film coating and the intermediate layered crystal; heat-treating the heat release tape to separate the heat release tape from the adhesive stamp, and the heat release tape from the insulating film coating; After heat-treating the heat release tape, pressing the adhesive stamp, the intermediate layered crystal and the insulating film coating on the substrate, and the insulating film coating is in contact with the substrate; After pressing the adhesive seal, the intermediate layered crystal and the insulating film coating on the substrate, lift up the adhesive seal, and the surface of the adhesive seal takes away part of the intermediate layered crystal to make the insulating A two-dimensional material is formed on the surface of the thin film coating. 2 . The two-dimensional material cleavage method according to claim 1 , wherein the parent layered crystal has an opposite first face and a second face; the two-dimensional material cleavage method further comprises: providing an adhesive tape. 3 . ; Before forming an insulating film coating on the surface of the parent layered crystal, the parent layered crystal is pasted on the surface of the tape, and the first surface is in contact with the tape; the parent layered crystal is pasted on the After the surface of the tape, the insulating thin film coating is formed on the second surface of the parent layered crystal. 3 . The two-dimensional material cleavage method according to claim 2 , wherein the material of the adhesive tape comprises polyimide film material, acrylic adhesive material or silicone adhesive material. 4 . 4 . The method for cleaving two-dimensional materials according to claim 2 , wherein the step of pasting the parent layered crystals on the surface of the tape is performed in an inert gas environment. 5 . 5 . The two-dimensional material cleavage method according to claim 1 , wherein the process of forming the insulating thin film coating layer comprises an evaporation process or a sputtering process. 6 . 6 . The two-dimensional material cleavage method according to claim 1 , wherein the material of the insulating thin film coating is aluminum oxide; the process for forming the insulating thin film coating is an evaporation process, and the parameters include: an evaporation environment. 7 . The partial pressure of oxygen is 1E-4 mbar ~ 2E-4 mbar, and the evaporation source is aluminum. 7 . The two-dimensional material cleavage method according to claim 1 , wherein the thickness of the insulating thin film coating is more than 50 nanometers. 8 . 8 . The two-dimensional material cleavage method according to claim 7 , wherein the thickness of the insulating thin film coating is 50 nanometers to 200 nanometers. 9 . 9 . The two-dimensional material cleavage method according to claim 1 , wherein the step of affixing a heat release tape on the surface of the insulating film coating is performed in an inert gas environment; the step of lifting the heat release tape is performed in an inert gas environment. 10 . Carry out in an inert gas environment; the step of covering the adhesive seal on the surface of the heat release tape is carried out in an inert gas environment; the step of heat-treating the heat release tape is carried out in an inert gas environment; The step of pressing the metal-like crystal and the insulating film coating on the substrate is performed in an inert gas environment; the step of lifting the adhesive seal is performed in an inert gas environment. 10 . The method for cleaving two-dimensional materials according to claim 1 , wherein the material for adhering the stamp comprises a polymer. 11 . 11. The two-dimensional material cleavage method of claim 10, wherein the polymer comprises polydimethylsiloxane. 12 . The method for cleaving two-dimensional materials according to claim 1 , wherein the temperature of heat-treating the heat release tape is 115 degrees Celsius to 125 degrees Celsius. 13 . 13. The two-dimensional material cleavage method according to claim 1, wherein before pressing the adhesive stamp, the intermediate layered crystal and the insulating film coating on the substrate, the method further comprises: The surface of the substrate is cleaned. 14. The two-dimensional material cleavage method according to claim 13, wherein the cleaning treatment comprises plasma treatment. 15 . The method for cleaving two-dimensional materials according to claim 14 , wherein the plasma treatment adopts oxygen plasma. 16 . 16 . The method for cleaving a two-dimensional material according to claim 1 , wherein the two-dimensional material comprises a single layer of MoS ₂ , a single layer of TaS ₂ , a single layer of Fe ₃ GeTe ₂ , and a single layer of VSe _2. Monolayer _FeSe , monolayer _CrI3 , monolayer _Cr2Ge2Te6 , monolayer _WSe2 , monolayer _WS2 , _{monolayer WTe2} or monolayer black phosphorus. 17 . The method for cleaving a two-dimensional material according to claim 1 , wherein the length of the two-dimensional material in the plane of the atomic distribution of the two-dimensional material is more than 100 μm. 18 .

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