CN110957418A - Method for improving electrode binding force of piezoelectric element - Google Patents
Method for improving electrode binding force of piezoelectric element Download PDFInfo
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- CN110957418A CN110957418A CN201811132175.2A CN201811132175A CN110957418A CN 110957418 A CN110957418 A CN 110957418A CN 201811132175 A CN201811132175 A CN 201811132175A CN 110957418 A CN110957418 A CN 110957418A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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Abstract
The invention discloses a method for improving electrode binding force of a piezoelectric element, and required equipment and materials comprise a vacuum high-temperature tube furnace, an ultrasonic cleaner, an air dryer, a high-temperature aging oven, a metal electrode of the piezoelectric element, a piezoelectric ceramic substrate, a tin welding machine and a rubber gasket. According to the method for improving the electrode bonding force of the piezoelectric element, the thermal corrosion groove is formed in the metalized surface of the piezoelectric ceramic substrate through the thermal corrosion method, one end of the metal electrode is conveniently inserted into the corresponding position of the piezoelectric ceramic substrate to be welded, the strength of the electrode bonding force is enhanced, the potential danger of delamination is solved, and the effect of relieving power impact is achieved by the annular rubber gasket which is bonded in the gap between the high-voltage element and the piezoelectric ceramic substrate and the metal electrode which is in the V-shaped structure and is located on the annular rubber gasket.
Description
Technical Field
The invention relates to a method for improving binding force, in particular to a method for improving the binding force of an electrode of a piezoelectric element, and belongs to the technical field of piezoelectric elements.
Background
The piezoelectric device is widely applied, when the frequency of an electric signal is close to the natural frequency of the piezoelectric sheet, the piezoelectric device generates mechanical resonance by the inverse piezoelectric effect, and the resonance frequency is mainly determined by the size and the shape of the piezoelectric sheet.
The bonding force between the metal electrode and the piezoelectric substrate of the piezoelectric component is the first premise that the piezoelectric efficiency can be fully exerted, particularly in the application field requiring power impact bearing, the index of the electrode bonding force is more critical, the component with poor electrode bonding force is easy to generate the hidden trouble of metal electrode adhesion force reduction and even delamination after long-term use, one end of the metal electrode is generally attached to the metalized surface of the piezoelectric substrate for welding, is easy to be extruded and broken by external acting force, and lacks of a structure for relieving external impact and power impact, thereby directly influencing the use of the component. Therefore, a method for improving the electrode bonding force of the piezoelectric element is proposed to solve the above problems.
Disclosure of Invention
The present invention is directed to solving the above problems and providing a method for improving the bonding force of electrodes of a piezoelectric element.
The invention achieves the above-mentioned purpose through the following technical scheme, a method for improving the electrode binding force of a piezoelectric element, the required equipment and materials include a vacuum high-temperature tube furnace, an ultrasonic cleaner, an air dryer, a high-temperature aging oven, a metal electrode of the piezoelectric element, a piezoelectric ceramic substrate, a tin welding machine and a rubber gasket;
a method for improving the electrode bonding force of a piezoelectric element is realized according to the following steps:
step one, surface treatment: the metalized surface of the piezoelectric ceramic substrate is subjected to surface treatment by adopting a thermal etching method to form a thermal etching groove, the piezoelectric ceramic substrate is placed in a vacuum high-temperature tube furnace, the thermal etching temperature is controlled to be between 1000 and 1100 ℃, and the heat preservation time at the thermal etching temperature is controlled to be between 5 and 6 hours;
step two, cleaning: the thermal etching communication on the metalized surface of the piezoelectric ceramic substrate is cleaned for 2-3 minutes by putting an ultrasonic cleaner and taken out;
step three, impurity removal and air drying: drying the surface of the cleaned piezoelectric ceramic substrate in air by an air dryer;
step four, aging treatment: putting the piezoelectric ceramic substrate with the heat etching groove after air drying into a high-temperature aging oven, controlling the aging treatment temperature at 300 ℃ and controlling the aging treatment time between 1 and 2 hours;
step five, welding: the metal electrode of the piezoelectric element is deeply inserted into the heat etching groove on the piezoelectric ceramic substrate, the piezoelectric ceramic substrate is placed on a workbench of a tin welding machine, after welding is completed, conductive glue is smeared on the surface of the welding position of the piezoelectric ceramic substrate and the metal electrode, and then the rubber gasket is adhered in a gap between the high-voltage element and the piezoelectric ceramic substrate.
Preferably, in the fifth step, the metal electrode connected between the medium-high voltage device and the piezoceramic substrate is in a V-shaped structure, and the metal electrode is located in the annular rubber gasket.
Preferably, one end of the metal electrode of the piezoelectric element is smaller than the specification of the port of the thermal etching groove, and the depth of the thermal etching groove is 3mm to 5 mm.
Preferably, three pores are formed in parallel on one end surface of the metal electrode of the piezoelectric element.
The invention has the beneficial effects that: according to the method for improving the electrode bonding force of the piezoelectric element, the thermal corrosion groove is formed in the metalized surface of the piezoelectric ceramic substrate through the thermal corrosion method, one end of the metal electrode is conveniently inserted into the corresponding position of the piezoelectric ceramic substrate to be welded, the strength of the electrode bonding force is enhanced, the potential danger of delamination is solved, and the effect of relieving power impact is achieved by the annular rubber gasket which is bonded in the gap between the high-voltage element and the piezoelectric ceramic substrate and the metal electrode which is in the V-shaped structure and is located on the annular rubber gasket.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
a method for improving electrode binding force of a piezoelectric element comprises the steps that required equipment and materials comprise a vacuum high-temperature tube furnace, an ultrasonic cleaner, an air dryer, a high-temperature aging oven, a metal electrode of the piezoelectric element, a piezoelectric ceramic substrate, a tin welding machine and a rubber gasket;
a method for improving the electrode bonding force of a piezoelectric element is realized according to the following steps:
step one, surface treatment: the metalized surface of the piezoelectric ceramic substrate is subjected to surface treatment by adopting a thermal etching method to form a thermal etching groove, the piezoelectric ceramic substrate is placed in a vacuum high-temperature tube furnace, the thermal etching temperature is controlled at 1100 ℃, and the heat preservation time at the thermal etching temperature is controlled at 6 hours;
step two, cleaning: the thermal etching communication on the metalized surface of the piezoelectric ceramic substrate is cleaned for 3 minutes by putting an ultrasonic cleaner and taken out;
step three, impurity removal and air drying: drying the surface of the cleaned piezoelectric ceramic substrate in air by an air dryer;
step four, aging treatment: putting the piezoelectric ceramic substrate with the heat etching grooves after air drying into a high-temperature aging oven, controlling the aging treatment temperature at 300 ℃ and controlling the aging treatment time at 2 hours;
step five, welding: the metal electrode of the piezoelectric element is deeply inserted into the heat etching groove on the piezoelectric ceramic substrate, the piezoelectric ceramic substrate is placed on a workbench of a tin welding machine, after welding is completed, conductive glue is smeared on the surface of the welding position of the piezoelectric ceramic substrate and the metal electrode, and then the rubber gasket is adhered in a gap between the high-voltage element and the piezoelectric ceramic substrate.
Furthermore, in the fifth step, the metal electrode connected between the piezoelectric element and the piezoelectric ceramic substrate is in a V-shaped structure, and the metal electrode is located in the annular rubber gasket.
Furthermore, the specification size of one end of the metal electrode of the piezoelectric element is smaller than the specification size of the port of the thermal etching groove, and the depth of the thermal etching groove is 5 mm.
Furthermore, three pores are arranged on one end surface of the metal electrode of the piezoelectric element side by side.
According to the method for improving the electrode bonding force of the piezoelectric element, the thermal corrosion groove is formed on the metalized surface of the piezoelectric ceramic substrate through the thermal corrosion method, so that one end of the metal electrode is conveniently inserted into the corresponding position of the piezoelectric ceramic substrate for welding, the strength of the electrode bonding force is enhanced, and the potential danger of delamination is solved.
Example two:
a method for improving electrode binding force of a piezoelectric element comprises the steps that required equipment and materials comprise a vacuum high-temperature tube furnace, an ultrasonic cleaner, an air dryer, a high-temperature aging oven, a metal electrode of the piezoelectric element, a piezoelectric ceramic substrate, a tin welding machine and a rubber gasket;
a method for improving the electrode bonding force of a piezoelectric element is realized according to the following steps:
step one, surface treatment: the metalized surface of the piezoelectric ceramic substrate is subjected to surface treatment by adopting a thermal etching method to form a thermal etching groove, the piezoelectric ceramic substrate is placed in a vacuum high-temperature tube furnace, the thermal etching temperature is controlled to be 1000 ℃, and the heat preservation time at the thermal etching temperature is controlled to be 5 hours;
step two, cleaning: the thermal etching communication on the metalized surface of the piezoelectric ceramic substrate is cleaned for 2 minutes by putting an ultrasonic cleaner and taken out;
step three, impurity removal and air drying: drying the surface of the cleaned piezoelectric ceramic substrate in air by an air dryer;
step four, aging treatment: putting the piezoelectric ceramic substrate with the heat etching grooves after air drying into a high-temperature aging oven, controlling the aging treatment temperature at 300 ℃ and controlling the aging treatment time at 1 hour;
step five, welding: the metal electrode of the piezoelectric element is deeply inserted into the heat etching groove on the piezoelectric ceramic substrate, the piezoelectric ceramic substrate is placed on a workbench of a tin welding machine, after welding is completed, conductive glue is smeared on the surface of the welding position of the piezoelectric ceramic substrate and the metal electrode, and then the rubber gasket is adhered in a gap between the high-voltage element and the piezoelectric ceramic substrate.
Furthermore, in the fifth step, the metal electrode connected between the piezoelectric element and the piezoelectric ceramic substrate is in a V-shaped structure, and the metal electrode is located in the annular rubber gasket.
The method for improving the electrode binding force of the piezoelectric element is favorable for achieving the effect of relieving power impact by the annular rubber gasket which is adhered in the gap between the high-voltage electric element and the piezoelectric ceramic substrate and the metal electrode which is in the V-shaped structure and is positioned on the annular rubber gasket.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (4)
1. A method for improving the electrode bonding force of a piezoelectric element is characterized in that: the required equipment and materials comprise a vacuum high-temperature tube furnace, an ultrasonic cleaner, an air dryer, a high-temperature aging oven, a metal electrode of a piezoelectric element, a piezoelectric ceramic substrate, a tin welding machine and a rubber gasket;
a method for improving the electrode bonding force of a piezoelectric element is realized according to the following steps:
step one, surface treatment: the metalized surface of the piezoelectric ceramic substrate is subjected to surface treatment by adopting a thermal etching method to form a thermal etching groove, the piezoelectric ceramic substrate is placed in a vacuum high-temperature tube furnace, the thermal etching temperature is controlled to be between 1000 and 1100 ℃, and the heat preservation time at the thermal etching temperature is controlled to be between 5 and 6 hours;
step two, cleaning: the thermal etching communication on the metalized surface of the piezoelectric ceramic substrate is cleaned for 2-3 minutes by putting an ultrasonic cleaner and taken out;
step three, impurity removal and air drying: drying the surface of the cleaned piezoelectric ceramic substrate in air by an air dryer;
step four, aging treatment: putting the piezoelectric ceramic substrate with the heat etching groove after air drying into a high-temperature aging oven, controlling the aging treatment temperature at 300 ℃ and controlling the aging treatment time between 1 and 2 hours;
step five, welding: the metal electrode of the piezoelectric element is deeply inserted into the heat etching groove on the piezoelectric ceramic substrate, the piezoelectric ceramic substrate is placed on a workbench of a tin welding machine, after welding is completed, conductive glue is smeared on the surface of the welding position of the piezoelectric ceramic substrate and the metal electrode, and then the rubber gasket is adhered in a gap between the high-voltage element and the piezoelectric ceramic substrate.
2. A method of improving a bonding force of electrodes of a piezoelectric element according to claim 1, wherein: and fifthly, the metal electrode connected between the medium and high voltage element and the piezoelectric ceramic substrate is of a V-shaped structure, and the metal electrode is positioned in the annular rubber gasket.
3. A method of improving the electrode bonding force of a piezoelectric element according to claim 1, wherein: one end specification size of the metal electrode of the piezoelectric element is smaller than the specification size of the port of the thermal etching groove, and the depth of the thermal etching groove is 3mm to 5 mm.
4. A method of improving the electrode bonding force of a piezoelectric element according to claim 1, wherein: three pores are arranged on the surface of one end of the metal electrode of the piezoelectric element side by side.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03292743A (en) * | 1990-04-10 | 1991-12-24 | Nec Corp | Manufacture of field-effect transistor |
| CN1610253A (en) * | 2003-10-22 | 2005-04-27 | 精工爱普生株式会社 | Manufacturing method of piezoelectric resonator |
| CN201181707Y (en) * | 2008-03-25 | 2009-01-14 | 苏州硅能半导体科技股份有限公司 | Structure for improving gate electrode metal layer adhesiveness of groove power MOS device |
| CN102867847A (en) * | 2011-07-05 | 2013-01-09 | 索尼公司 | Semiconductor device, fabrication method for a semiconductor device and electronic apparatus |
| CN103915404A (en) * | 2013-01-04 | 2014-07-09 | 佳邦科技股份有限公司 | Electronic structure and electronic packaging member for increasing bonding force between internal and external electrodes |
| CN108063182A (en) * | 2017-11-27 | 2018-05-22 | 大连理工大学 | A kind of piezo-composite element electrode preparation method |
-
2018
- 2018-09-27 CN CN201811132175.2A patent/CN110957418A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03292743A (en) * | 1990-04-10 | 1991-12-24 | Nec Corp | Manufacture of field-effect transistor |
| CN1610253A (en) * | 2003-10-22 | 2005-04-27 | 精工爱普生株式会社 | Manufacturing method of piezoelectric resonator |
| CN201181707Y (en) * | 2008-03-25 | 2009-01-14 | 苏州硅能半导体科技股份有限公司 | Structure for improving gate electrode metal layer adhesiveness of groove power MOS device |
| CN102867847A (en) * | 2011-07-05 | 2013-01-09 | 索尼公司 | Semiconductor device, fabrication method for a semiconductor device and electronic apparatus |
| CN103915404A (en) * | 2013-01-04 | 2014-07-09 | 佳邦科技股份有限公司 | Electronic structure and electronic packaging member for increasing bonding force between internal and external electrodes |
| CN108063182A (en) * | 2017-11-27 | 2018-05-22 | 大连理工大学 | A kind of piezo-composite element electrode preparation method |
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Application publication date: 20200403 |