CN110948377B - Chemical mechanical polishing mixed liquid and polishing method - Google Patents
Chemical mechanical polishing mixed liquid and polishing method Download PDFInfo
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- CN110948377B CN110948377B CN201811118496.7A CN201811118496A CN110948377B CN 110948377 B CN110948377 B CN 110948377B CN 201811118496 A CN201811118496 A CN 201811118496A CN 110948377 B CN110948377 B CN 110948377B
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- 238000005498 polishing Methods 0.000 title claims abstract description 129
- 239000007788 liquid Substances 0.000 title claims abstract description 112
- 239000000126 substance Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000002738 chelating agent Substances 0.000 claims abstract description 39
- 239000002245 particle Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000000227 grinding Methods 0.000 claims abstract description 15
- 238000007517 polishing process Methods 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N Gluconic acid Natural products OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- 239000000174 gluconic acid Substances 0.000 claims description 4
- 235000012208 gluconic acid Nutrition 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000002776 aggregation Effects 0.000 abstract description 4
- 238000004220 aggregation Methods 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 33
- 229910021645 metal ion Inorganic materials 0.000 description 17
- 239000000203 mixture Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008571 general function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Provided is a chemical mechanical polishing method, including: mounting a semiconductor wafer on the grinding head, wherein a film layer is formed on the surface of the semiconductor wafer; mixing a chemical mechanical polishing liquid provided by a first liquid provider and a chelating agent provided by a second liquid provider to form a mixed liquid, wherein the chemical mechanical polishing liquid has a pH value of more than 7 and enables the mixed liquid to be maintained to be alkaline in a chemical polishing process; and leading the mixed liquid out to a polishing pad on the platform, and driving the semiconductor wafer to polish on the polishing pad by the polishing head. The polishing liquid method of the invention mixes the alkaline polishing liquid with the chelating agent, and under the alkaline condition, the chelating agent chelates with the metal in the polishing liquid, thereby cutting off the connection between the polishing particles, reducing the aggregation of the polishing particles, and reducing the damage to the wafer, and the number of scratches of 0.12 microns in the unit area of the surface of the wafer can be less than 4000 by adopting the polishing method of the invention.
Description
Technical Field
The invention belongs to the technical field of chemical mechanical polishing, and particularly relates to a chemical mechanical polishing mixed solution and a chemical mechanical polishing method.
Background
In wafer manufacturing, with the upgrading of process technology and the shrinking of wire and gate dimensions, the requirement of photolithography (Non-uniformity) technology on the surface of a wafer is increasing, and the role of Chemical Mechanical Polishing (CMP) is becoming more important. CMP is the polishing of uneven surfaces of a wafer into a flat surface using chemical and mechanical actions, and global planarization can be achieved.
In chemical mechanical polishing, the properties of the polishing slurry directly affect the quality of the polished surface. The polishing liquid generally comprises ultrafine solid particle polishing particles (such as nano-sized SiO 2、Al2O3 particles, etc.), a surfactant, a stabilizer, an oxidant, etc., and the polishing particles provide a polishing effect. How to reduce the scratch rate of the wafer surface after the chemical mechanical polishing of the wafer is always a technical problem to be solved by those skilled in the art.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a chemical mechanical polishing solution capable of reducing scratches on a wafer surface, and a polishing method.
In one aspect, the present invention provides a chemical mechanical polishing method, including: providing a chemical mechanical polishing device, wherein the chemical mechanical polishing device comprises a platform for mounting a polishing pad, a polishing head for fixing a wafer for polishing and moving on the platform, a first liquid feeder for feeding chemical mechanical polishing liquid, a second liquid feeder for feeding chelating agent and a third liquid feeder for mixing liquid, wherein the third liquid feeder is provided with a mixing groove, a liquid feeding port of the first liquid feeder and a liquid feeding port of the second liquid feeder are connected to the mixing groove, and a liquid feeding port of the third liquid feeder is aligned on the platform; mounting a semiconductor wafer on the grinding head, wherein a film layer is formed on the surface of the semiconductor wafer; a step of performing pre-mixing in a chemical mechanical polishing process, wherein a chemical mechanical polishing liquid provided by the first liquid supplier and a chelating agent provided by the second liquid supplier are mixed to form a mixed liquid in the mixing tank, the chemical polishing liquid comprises polishing particles and water, the chemical mechanical polishing liquid has a pH value of more than 7, and the mixed liquid is maintained to be alkaline in the chemical polishing process; and carrying out chemical mechanical polishing to planarize the film, wherein the mixed liquid provided by the third liquid supplier is guided out to a polishing pad on the platform, and the polishing head drives the semiconductor wafer to polish on the polishing pad.
According to one embodiment of the invention, the mixing tank is located on the platform and integrally connected with the liquid supply port of the third liquid supply device to form a liquid mixing coater.
According to another embodiment of the invention, the chelating agent comprises 0.09% -0.12% of the total weight of the mixed liquor.
According to another embodiment of the present invention, the film comprises a silicon oxide film, the semiconductor wafer has a trench, and the film fills the trench.
According to another embodiment of the present invention, after the step of performing chemical mechanical polishing to planarize the film, the film has a number of polishing scratches of greater than 0.12 μm width of not more than 4000.
According to another embodiment of the invention, the pH of the mixture is 9-12.
According to another embodiment of the present invention, the mixture is injected at a flow rate of 200-300ml/min and the polishing head provides a polishing pressure of 2-3psi.
According to another embodiment of the present invention, the semiconductor wafer is a 12 inch wafer.
In another aspect, the present invention provides a chemical mechanical polishing mixture comprising a chemical mechanical polishing solution and a chelating agent, wherein the chelating agent comprises 0.09% -0.12% of the total weight of the mixture, the chelating agent comprises gluconic acid, the chemical mechanical polishing solution comprises polishing particles and water, and the chemical mechanical polishing solution has a pH value of greater than 7 and enables the mixture to be maintained alkaline during a chemical polishing process.
According to an embodiment of the present invention, the abrasive particles comprise silica particles, the abrasive particles having an average particle size of not greater than 0.15 microns.
The polishing method of the invention mixes the alkaline polishing liquid with the chelating agent immediately, and under alkaline condition, the chelating agent chelates with the metal in the polishing liquid, thereby cutting off the connection between the polishing particles, reducing the aggregation of the polishing particles, and reducing the damage to the wafer, and the number of scratches of 0.12 microns in the unit area of the surface of the wafer can be less than 4000 by adopting the polishing method of the invention.
Drawings
The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
FIG. 1 is a schematic diagram of a polishing method according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of the grinding principle of the grinding method according to the embodiment of the invention.
Fig. 3 is a schematic diagram of the grinding principle of the conventional grinding method.
Wherein reference numerals are as follows:
1: first liquid feeder
2: Second liquid feeder
3: Third liquid feeder
41: Platform
42: Polishing pad
5: Grinding head
6: Wafer with a plurality of wafers
7: Abrasive particles
8: Metal ion
9: Chelating agent
10: Scratch mark
Detailed Description
The present invention will be described in detail with reference to the following embodiments.
As shown in fig. 1 and 2, the chemical mechanical polishing method according to an embodiment of the present invention includes: providing a chemical mechanical polishing apparatus, wherein the chemical mechanical polishing apparatus comprises a platform 41 for mounting a polishing pad 42, a polishing head 5 for fixing a wafer for polishing and moving on the platform 41, a first liquid feeder 1 for feeding chemical mechanical polishing liquid, a second liquid feeder 2 for feeding chelating agent and a third liquid feeder 3 for mixing liquid, wherein the third liquid feeder 3 is provided with a mixing tank, a liquid feeding port of the first liquid feeder 1 and a liquid feeding port of the second liquid feeder 2 are connected to the mixing tank, and the liquid feeding port of the third liquid feeder 3 is aligned on the platform 41; mounting a semiconductor wafer 6 on the polishing head 5, wherein a film layer is formed on the surface of the semiconductor wafer 6; a step of performing pre-mixing in a chemical mechanical polishing process, in which a chemical mechanical polishing liquid provided by a first liquid supplier 1 and a chelating agent provided by a second liquid supplier 2 are mixed to form a mixed liquid in a mixing tank, the chemical mechanical polishing liquid including polishing particles and water, the chemical mechanical polishing liquid having a pH value of more than 7 and maintaining the mixed liquid alkaline in the chemical polishing process; and performing chemical mechanical polishing to planarize the film, wherein the mixed liquid provided by the third liquid supplier 3 is guided out to the polishing pad 42 on the platen, and the polishing head 5 drives the semiconductor wafer 6 to polish on the polishing pad 42.
In the chemical mechanical polishing apparatus, the mixing tank of the third liquid feeder 3 is located on the platform 41 and integrally connected with the liquid supply port of the third liquid feeder 3 to form a liquid mixing coater. The chemical mechanical polishing liquid in the first liquid supply apparatus 1 may be any alkaline polishing liquid, and may be, but is not limited to, commercially available alkaline polishing liquids, such as Cabot D3586 and Versum STI 2401, etc. Comprises grinding particles, water and additives, wherein the pH value of the grinding liquid is more than 7.
In the chemical mechanical polishing liquid, the abrasive particles can be any suitable abrasive particles, such as silica, alumina, gamma alumina, ceria, or polymeric particles, spinel, zinc oxide, hybrid organic/inorganic particles, or mixtures thereof. The abrasive particles preferably comprise silica particles. The average particle size of the abrasive particles is preferably not greater than 150 nm. The concentration of the abrasive particles is about 2 to 20%, preferably 5 to 15%, of the total weight of the slurry.
The polishing liquid inevitably contains metal ion impurities such as Al3+、Ca2+、Co2+、Fe3+、Fe2+、Cu2+、Cu+、Cr2+、Cr3+、Cr6+、K+、Mg2+、Mn2+、Na+、Ti2+、Ti3+、Ti2+、Zn2+、Zr2+、Zr3+、Zr4+ and the like.
The chelating agent in the second liquid feeder 2 and the chemical mechanical polishing liquid in the first liquid feeder 1 are mixed in the mixing tank of the third liquid feeder 3. The chelating agent in the mixed solution has the function of clathrating the metal ions into the chelating agent through the strong combination of the chelating agent molecules and the metal ions to become a stable compound with larger molecular weight, thereby preventing the metal ions from adsorbing negatively charged grinding particles to form large particles so as to scratch the wafer. Thus, the chelating agent is any chelating agent that will react with the metal ions in the slurry. The chelating agent may be inorganic metal ion chelating agent, organic metal ion chelating agent, carboxylic acid type, organic polyphosphonic acid, polycarboxylic acid, etc. The chelating agent has a strong chelating effect with metal ions under alkaline conditions and a weak chelating effect with metal ions under acidic conditions, so that the chemical mechanical polishing liquid of the present invention is preferably alkaline. Preferably, the pH value of the chemical mechanical polishing liquid is 9-12. The content of the chelating agent is 0.09-0.12% of the total weight of the grinding fluid. When the content is less than 0.09%, the chelating agent has a limited effect and is not effective in reducing scratches. When the content is more than 0.12%, unnecessary waste of the chelating agent is caused. Most chelating agents have a certain selectivity for metal ions, so that if a chelating agent having a general function is selected, most of the metal ions in the polishing liquid are chelated, and the maximum effect of the chelating agent is exerted. Gluconic acid is the omnipotent chelator. Thus, a preferred chelating agent for the chemical mechanical polishing slurry of the present invention is gluconic acid.
In order to keep the polishing process in the mixed solution alkaline, the chemical mechanical polishing solution can also comprise a pH value regulator so as to keep the polishing solution alkaline all the time in the polishing process. The pH regulator may be dimethylethanolamine, diethanolamine, triethanolamine, etc.
The chemical mechanical polishing liquid may further include other additives, such as surfactants, which are commonly used in the art.
The surface of the semiconductor wafer 6 may have a film layer, which may include a silicon oxide film layer. The semiconductor wafer 6 may have a trench, the film layer filling the trench. The semiconductor wafer may be a 12 inch wafer.
The mixture may be injected at a flow rate of 200-300ml/min and the polishing head may provide a polishing pressure of 2-3psi.
By adopting the polishing method of the invention, the chelating agent is chelated with the metal ions to avoid the aggregation of the polishing particles, and the average particle diameter of the polishing particles is not more than 0.15 micron, so that after the step of carrying out chemical mechanical polishing to planarize the film, the number of the polishing scratches with the width larger than 0.12 micron on the surface of the 12-inch wafer 6 is not more than 4000.
In another embodiment of the present invention, the chemical mechanical polishing liquid in the first liquid supply device 1 may be mixed with the chelating agent to form a chemical mechanical polishing mixture.
Fig. 2 shows a schematic diagram of the polishing principle of the polishing method according to the embodiment of the present invention. As shown in fig. 2, the metal ions 8 sequester the chelating agent 9 in the slurry to form a larger compound, thereby shearing off the connection with the negatively charged abrasive particles 7, reducing agglomeration between the abrasive particles and reducing scratching of the wafer 6.
Fig. 3 shows a schematic diagram of the grinding principle of a conventional grinding method. As shown in fig. 3, the conventional polishing liquid contains a small amount of metal ions 8, and the metal ions 8 are positively charged and the surfaces of the polishing particles 7 are negatively charged. The abrasive particles 7 agglomerate around the metal ions 8 by electrostatic attraction to form large particles, which tend to scratch the wafer 6 during the grinding process, creating larger scratches 10.
The chemical mechanical polishing method can greatly reduce the scratch to the wafer 6, compared with the existing polishing liquid, the scratch quantity in a 12-inch wafer can be reduced from 5000 pieces to 3500-4000 pieces, the wafer defect can be reduced by 20% -30%, and the wafer yield is improved.
Of course, the present invention is capable of other various embodiments and its several details are capable of modification and variation in light of the present invention, as will be apparent to those skilled in the art, without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (5)
1. A method of chemical mechanical polishing, comprising:
Providing a chemical mechanical polishing device, wherein the chemical mechanical polishing device comprises a platform for mounting a polishing pad, a polishing head for fixing a wafer for polishing and moving on the platform, a first liquid feeder for feeding chemical mechanical polishing liquid, a second liquid feeder for feeding chelating agent and a third liquid feeder for mixing liquid, wherein the third liquid feeder is provided with a mixing groove, a liquid feeding port of the first liquid feeder and a liquid feeding port of the second liquid feeder are connected to the mixing groove, and a liquid feeding port of the third liquid feeder is aligned on the platform;
mounting a semiconductor wafer on the grinding head, wherein a silicon oxide film layer is formed on the surface of the semiconductor wafer;
A step of performing pre-mixing in a chemical mechanical polishing process, wherein a chemical mechanical polishing liquid provided by the first liquid supplier and a chelating agent provided by the second liquid supplier are mixed to form a mixed liquid in the mixing tank, the chemical mechanical polishing liquid comprises polishing particles and water, the concentration of the polishing particles is 2 to 20 percent of the total weight of the chemical mechanical polishing liquid, and the chemical mechanical polishing liquid has a pH value of more than 7 and enables the mixed liquid to be maintained to be alkaline in the chemical polishing process; and
Carrying out chemical mechanical polishing to planarize the film layer, leading out the mixed liquid provided by the third liquid feeder to a polishing pad on the platform, driving the semiconductor wafer to polish on the polishing pad by the polishing head, and integrating and connecting the mixed tank on the platform and a liquid feeding port of the third liquid feeder to form a liquid mixed coater;
Wherein the chelating agent accounts for 0.09% -0.12% of the total weight of the mixed solution, and the chelating agent is gluconic acid.
2. The method of claim 1, wherein the semiconductor wafer has a trench, and the film fills the trench.
3. The cmp method of claim 1 wherein the number of polishing scratches of the film having a width greater than 0.12 μm is not greater than 4000 after the step of performing cmp to planarize the film.
4. The chemical mechanical polishing method according to claim 1, wherein the pH of the mixed solution is 9 to 12.
5. The chemical mechanical polishing method according to claim 1, wherein the mixed liquid is injected at a flow rate of 200-300ml/min, and the polishing head provides a polishing pressure of 2-3psi.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811118496.7A CN110948377B (en) | 2018-09-25 | 2018-09-25 | Chemical mechanical polishing mixed liquid and polishing method |
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| CN201811118496.7A CN110948377B (en) | 2018-09-25 | 2018-09-25 | Chemical mechanical polishing mixed liquid and polishing method |
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| CN110948377B true CN110948377B (en) | 2024-06-21 |
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| CN117086779A (en) * | 2022-05-12 | 2023-11-21 | 成都高真科技有限公司 | Grinding liquid supply device and chemical mechanical grinding equipment |
| CN115261152B (en) * | 2022-08-05 | 2024-03-29 | 长鑫存储技术有限公司 | Cleaning agent and application thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106816374A (en) * | 2015-11-30 | 2017-06-09 | 台湾积体电路制造股份有限公司 | Method for performing chemical mechanical polishing process |
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| JP3516157B2 (en) * | 1998-12-14 | 2004-04-05 | 松下電器産業株式会社 | Polishing liquid and polishing method for chemical mechanical polishing |
| US7435162B2 (en) * | 2005-10-24 | 2008-10-14 | 3M Innovative Properties Company | Polishing fluids and methods for CMP |
| CN1858133A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Polishing liquid for chemical and mechanical polsihing of computer hard disc base sheet |
| JP2013165088A (en) * | 2010-06-03 | 2013-08-22 | Asahi Glass Co Ltd | Polishing agent and polishing method |
| CN102623327B (en) * | 2011-01-31 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical lapping method |
| US9401104B2 (en) * | 2014-05-05 | 2016-07-26 | Cabot Microelectronics Corporation | Polishing composition for edge roll-off improvement |
| CN107243783B (en) * | 2017-08-09 | 2018-08-28 | 睿力集成电路有限公司 | Chemical and mechanical grinding method, equipment and cleaning solution |
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| CN106816374A (en) * | 2015-11-30 | 2017-06-09 | 台湾积体电路制造股份有限公司 | Method for performing chemical mechanical polishing process |
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