CN110879344A - Shared contact hole and etching defect detection method thereof - Google Patents
Shared contact hole and etching defect detection method thereof Download PDFInfo
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- CN110879344A CN110879344A CN201911106502.1A CN201911106502A CN110879344A CN 110879344 A CN110879344 A CN 110879344A CN 201911106502 A CN201911106502 A CN 201911106502A CN 110879344 A CN110879344 A CN 110879344A
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- contact hole
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2653—Contactless testing using electron beams
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/307—Contactless testing using electron beams of integrated circuits
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Abstract
The invention discloses a method for detecting etching defects of a shared contact hole in the manufacturing process of a semiconductor device, which comprises the following steps: forming the shared contact hole in the semiconductor device, wherein the active region of the semiconductor device is arranged below the shared contact hole, and the shared contact hole is electrically isolated from the polysilicon gate of the semiconductor device; and carrying out voltage contrast mode detection of electron beam scanning defect detection on the shared contact hole to judge whether an etching defect exists. The technical scheme provided by the invention solves the problems of long feedback time and insufficient sensitivity of contact hole etching process window monitoring in the conventional monitoring mode. The method for replacing the polysilicon wire with the insulating medium (such as silicon nitride) wire by adopting the short process can skip (not execute) multiple ion injections without germanium-silicon process and additional test patterns or light masks, and can realize the monitoring of the etching process window with high sensitivity on the active region and the polysilicon gate shared contact hole.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a shared contact hole for detecting etching defects. The invention also relates to a method for detecting the etching defects by using the shared contact hole.
Background
With the continuous development of integrated circuit technology, in order to improve the integration level and speed of the circuit, the metal layers of large-scale integrated circuits mostly adopt multilayer metal wiring. Multiple layer metallization creates the need to fill the contact holes with metal in order to form electrical vias between the metal layers. In the process of wafer production, as technology nodes are continuously upgraded, the process size is gradually reduced, and the requirement on an etching process window of a contact hole is higher and higher. Generally, due to various reasons such as precision limitation and environmental influence of a photolithography process, when a contact hole is formed, the etching depth of the contact hole is insufficient, or a partial contact hole may be shifted, which may cause an open circuit of the contact hole. Therefore, before mass production, the opened contact holes are usually inspected to ensure that the produced semiconductor devices can work normally.
Currently, the electron beam scanning defect detection is used to confirm the etching process window, and a full-process (i.e. the whole process flow of device production) wafer is needed, so that the feedback period is longer. And because the etching process windows of the contact holes at different positions are different, and the contact hole with the smallest process window is a shared contact hole of the active region and the polysilicon gate, the problem of insufficient etching of the contact hole has lower sensitivity in detection and is difficult to detect.
Disclosure of Invention
The invention aims to provide a shared contact hole formed in the production process of a semiconductor device, which can be used for detecting the etching defects of the shared contact hole of an active region and a polysilicon gate.
The invention provides a method for detecting the etching defect of the active region and the polysilicon gate sharing contact hole in the production process of the semiconductor device.
In order to solve the technical problem, the shared contact hole is formed in the manufacturing process of a semiconductor device and used for detecting the etching defect of the shared contact hole, the shared contact hole is formed above an active region of a substrate of the semiconductor device, and an insulating medium line is adopted between the shared contact hole and a polysilicon gate of the semiconductor device.
Optionally, the shared contact hole is further improved, and the insulating medium line is formed by using silicon nitride.
Optionally, the shared contact hole is further improved, and the shared contact hole is provided with a tungsten plug.
The plug is a structure filled in the through hole to electrically conduct the metal layers.
The invention provides a method for detecting etching defects of a shared contact hole by using any one of the shared contact holes in the manufacturing process of a semiconductor device, which comprises the following steps:
s1, forming the sharing contact hole in the semiconductor device, wherein the active region of the semiconductor device is arranged below the sharing contact hole, and the sharing contact hole is electrically isolated from the polysilicon gate of the semiconductor device;
and S2, performing voltage contrast mode detection of electron beam scanning defect detection on the shared contact hole to judge whether the etching defect exists.
Optionally, the method for detecting etching defects of the shared contact hole is further improved, and when step S2 is implemented, it is determined whether the voltage contrast signal at the bottom of the shared contact hole is a bright field, if the voltage contrast signal is a dark field, an etching defect exists, and if the voltage contrast signal is a bright field, an etching defect does not exist. The bright field signal and the dark field signal detected by the electron beam scanning reflect the conductivity of the contact hole, if the bright field signal indicates that the contact hole is a through hole, the etching is normal, and if the dark field signal indicates that the contact hole is an open circuit, the etching is insufficient.
Electron Beam inspection (E-Beam inspection, EBI) is used for inspecting defects (defects) of semiconductor devices, mainly Electrical defects (Physical defects) and secondarily shape defects (Physical defects). The electron beam detection takes a focused electron beam as a detection source, and the sensitivity is highest. When electron beam detection is adopted, secondary electrons are excited by incident electron beams, and then defects which cannot be detected by optical inspection equipment are captured through collection and analysis of the secondary electrons. For example, when an HAR structure such as contact or via is not sufficiently etched, it is difficult to detect with a dark field or bright field detection apparatus because a defect is at the bottom of the structure, but since the defect affects transmission of incident electrons, a voltage contrast image is formed, and various defects affecting electrical properties due to an abnormality of the HAR structure are detected. In addition, since the detection source is an electron beam, the detection result is not affected by some surface physical properties such as color anomaly, thickness variation or front layer defect, so the electron beam inspection technology can also be used for detecting small surface defects such as gate etching residues and the like. The electron speed defect scanner/electron beam defect scanning detection machine can represent the defects as bright field/dark field, and further distinguish whether the defects exist through the bright field/dark field.
Optionally, the method for detecting etching defects of the shared contact hole is further improved, and when step S2 is implemented, voltage contrast mode detection of electron beam scanning defect detection is performed at a defect detection station after the shared contact hole is subjected to chemical mechanical polishing.
Optionally, the method for detecting the etching defect of the shared contact hole is further improved, and tungsten plug chemical mechanical polishing is adopted for the shared contact hole.
Optionally, the method for detecting the etching defect of the shared contact hole is further improved, and the shared contact hole is electrically isolated from the polysilicon gate of the semiconductor device by using an insulating medium.
Optionally, the method for detecting the etching defect of the shared contact hole is further improved, and the insulating medium is silicon nitride.
Because the shared contact hole of the whole process is connected with the polysilicon wire, partial voltage contrast signals still exist when the bottom of the contact hole is not etched sufficiently, and the difference is small compared with the contact hole which is etched completely, and the detection sensitivity is not enough; the short process (i.e. the process implemented for defect detection) of the invention is changed into the process of connecting the shared contact hole with the insulating medium line, so that the difference of voltage contrast signals is obvious when the bottom of the contact hole is not etched sufficiently, and the detection sensitivity can be greatly improved.
The technical scheme provided by the invention solves the problems of long feedback time and insufficient sensitivity of contact hole etching process window monitoring in the conventional monitoring mode. The bottom of most of the shared contact holes in the whole process is connected with germanium and silicon, and an etching process window is large and is not suitable for being used as a process window detection graph; and most of etching process windows sharing the contact holes are minimized after the short process skips the germanium-silicon process, so that the method is more suitable for detecting and monitoring graphs of the process windows. The method for replacing the polysilicon wire with the insulating medium (such as silicon nitride) wire by adopting the short process can skip (not execute) multiple ion injections without germanium-silicon process and additional test patterns or light masks, and can realize the monitoring of the etching process window with high sensitivity on the active region and the polysilicon gate shared contact hole.
Drawings
FIG. 1 is a schematic diagram of a conventional contact hole shared by a large etching process window in a full process.
FIG. 2 is a schematic diagram of a conventional common contact hole with a minimum process window.
FIG. 3 is a schematic view of a structure of a short process shared contact hole according to the present invention.
Description of the reference numerals
1 is a shared contact hole
2 is an alloy layer (Ni-Si alloy)
3 is a polysilicon line
4 is an active region
And 5 is an insulating dielectric wire.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technical solutions of these exemplary embodiments to those skilled in the art.
It should be noted that the overall process of the present invention refers to the overall process flow of the semiconductor device production according to the design. The short process of the present invention refers to a process flow for performing detection for detecting the shared contact hole (the shared contact hole of the active region and the polysilicon gate) with the smallest process window.
As shown in fig. 3, the first embodiment of the shared contact hole provided by the present invention is formed in the semiconductor device manufacturing process for detecting the etching defect of the shared contact hole, the shared contact hole is formed above the active region of the semiconductor device substrate, and an insulating dielectric line is used between the shared contact hole and the polysilicon gate of the semiconductor device.
The insulating medium line is formed by adopting silicon nitride, and the sharing contact hole adopts a tungsten plug.
The first embodiment of the shared contact uses a schematic cross-sectional view to describe other portions of the semiconductor device, which are omitted, in accordance with an exemplary embodiment of the present invention. Accordingly, the exemplary embodiments should not be construed as being limited to only the semiconductor device structures shown herein, but may also encompass all semiconductor devices to which the shared contact hole can be applied.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The first embodiment of the shared contact hole provided by the invention is suitable for being used as a detection and monitoring graph of a process window, a method for replacing a polysilicon line with an insulating medium (such as silicon nitride) line by adopting a short process can skip (do not execute) multiple ion injections without a germanium-silicon process, and can realize that the etching process window is monitored at high sensitivity by a voltage contrast mode of electron beam scanning defect detection on an active region and the polysilicon gate shared contact hole without designing an additional test graph or a photomask.
The invention provides a first embodiment of a method for detecting etching defects of a shared contact hole by using the shared contact hole in the manufacturing process of a semiconductor device, which comprises the following steps:
s1, forming the sharing contact hole in the semiconductor device, wherein the active region of the semiconductor device is arranged below the sharing contact hole, and the sharing contact hole is electrically isolated from the polysilicon gate of the semiconductor device;
s2, carrying out voltage contrast mode detection of electron beam scanning defect detection on the shared contact hole to judge whether an etching defect exists;
and judging whether the voltage contrast signal at the bottom of the shared contact hole is a bright field or not, wherein if the voltage contrast signal is a dark field, the etching defect exists, and if the voltage contrast signal is a bright field, the etching defect does not exist.
The invention provides a second embodiment of a method for detecting etching defects of a shared contact hole by using the shared contact hole in the manufacturing process of a semiconductor device, which comprises the following steps:
s1, forming the sharing contact hole in the semiconductor device, wherein the active region of the semiconductor device is arranged below the sharing contact hole, and the sharing contact hole is electrically isolated from the polysilicon gate of the semiconductor device;
s2, after the chemical mechanical grinding of the plug is finished in the shared contact hole, voltage contrast mode detection of electron beam scanning defect detection is carried out in a defect detection site to judge whether the etching defect exists;
and judging whether the voltage contrast signal at the bottom of the shared contact hole is a bright field or not, wherein if the voltage contrast signal is a dark field, the etching defect exists, and if the voltage contrast signal is a bright field, the etching defect does not exist.
The invention provides a third embodiment of a method for detecting etching defects of a shared contact hole by using the shared contact hole in the manufacturing process of a semiconductor device, which comprises the following steps:
s1, forming the sharing contact hole in the semiconductor device, wherein the active region of the semiconductor device is arranged below the sharing contact hole, and the sharing contact hole is electrically isolated from the polysilicon gate of the semiconductor device;
and S2, electrically isolating the shared contact hole and the polysilicon gate of the semiconductor device by using silicon nitride. After tungsten plug chemical mechanical grinding is adopted in the shared contact hole, voltage contrast mode detection of electron beam scanning defect detection is carried out at a defect detection site to judge whether an etching defect exists;
and judging whether the voltage contrast signal at the bottom of the shared contact hole is a bright field or not, wherein if the voltage contrast signal is a dark field, the etching defect exists, and if the voltage contrast signal is a bright field, the etching defect does not exist.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (9)
1. A shared contact hole formed in a semiconductor device fabrication process for shared contact hole etch defect detection, comprising: the shared contact hole is formed above the active region of the semiconductor device substrate, and an insulating medium line is adopted between the shared contact hole and the polysilicon gate of the semiconductor device.
2. The shared contact hole of claim 1, wherein: the insulating medium line is formed by adopting silicon nitride.
3. The shared contact hole of claim 1, wherein: the shared contact hole is a tungsten plug.
4. A method for detecting etching defects of a shared contact hole using the shared contact hole according to any one of claims 1 to 3, which is used in a semiconductor device manufacturing process, comprising:
s1, forming the sharing contact hole in the semiconductor device, wherein the active region of the semiconductor device is arranged below the sharing contact hole, and the sharing contact hole is electrically isolated from the polysilicon gate of the semiconductor device;
and S2, performing voltage contrast mode detection of electron beam scanning defect detection on the shared contact hole to judge whether the etching defect exists.
5. The method for detecting etching defects of a shared contact hole as claimed in claim 4, wherein: and when the step S2 is implemented, judging whether the voltage contrast signal at the bottom of the shared contact hole is a bright field, if the voltage contrast signal is a dark field, the etching defect exists, and if the voltage contrast signal is a bright field, the etching defect does not exist.
6. The method for detecting etching defects of a shared contact hole as claimed in claim 4, wherein: when step S2 is performed, voltage contrast mode detection of electron beam scanning defect detection is performed at the defect detection station after the completion of plug chemical mechanical polishing in the shared contact hole.
7. The method for detecting etching defects of a shared contact hole as claimed in claim 6, wherein: the shared contact hole is polished by tungsten plug chemical machinery.
8. The method for detecting etching defects of a shared contact hole as claimed in claim 4, wherein: the shared contact hole and the polysilicon gate of the semiconductor device are electrically isolated by adopting an insulating medium.
9. The method for detecting etching defects of a shared contact hole as claimed in claim 8, wherein: the insulating dielectric is silicon nitride.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911106502.1A CN110879344A (en) | 2019-11-13 | 2019-11-13 | Shared contact hole and etching defect detection method thereof |
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| CN201911106502.1A CN110879344A (en) | 2019-11-13 | 2019-11-13 | Shared contact hole and etching defect detection method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854092A (en) * | 2019-11-13 | 2020-02-28 | 上海华力集成电路制造有限公司 | Shared contact hole and etching defect detection method thereof |
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Application publication date: 20200313 |