[go: up one dir, main page]

CN110875180B - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

Info

Publication number
CN110875180B
CN110875180B CN201910809061.5A CN201910809061A CN110875180B CN 110875180 B CN110875180 B CN 110875180B CN 201910809061 A CN201910809061 A CN 201910809061A CN 110875180 B CN110875180 B CN 110875180B
Authority
CN
China
Prior art keywords
substrate
process fluid
substrate processing
liquid film
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910809061.5A
Other languages
Chinese (zh)
Other versions
CN110875180A (en
Inventor
李映一
朴贵秀
吴承勋
崔重奉
金大勋
方炳善
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semes Co Ltd
Original Assignee
Semes Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semes Co Ltd filed Critical Semes Co Ltd
Publication of CN110875180A publication Critical patent/CN110875180A/en
Application granted granted Critical
Publication of CN110875180B publication Critical patent/CN110875180B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

The invention provides a substrate processing method. In one embodiment, a substrate processing method includes the steps of: rotating the substrate; and forming a liquid film by supplying a process fluid to an upper surface of the substrate, a thickness of the liquid film on the substrate being adjusted to a set thickness during rotation of the substrate.

Description

Substrate processing method and substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method.
Background
In a process for manufacturing a semiconductor device, a liquid crystal display device, or the like, a wet etching process is performed in which a silicon nitride film and a silicon oxide film are formed on a front surface (front surface) of a substrate, and a high-temperature phosphoric acid aqueous solution is supplied as an etching solution to selectively remove the silicon nitride film.
The higher the temperature of the aqueous phosphoric acid solution provided, the higher the etching rate. However, phosphoric acid heated to 175 ℃ or higher causes problems in the supply piping.
Disclosure of Invention
Problems to be solved by the invention
An object of the present invention is to provide a processing method and apparatus capable of improving the processing efficiency of a substrate.
Further, it is an object of the present invention to provide a substrate processing method and apparatus having a high etching rate.
Further, it is an object of the present invention to provide a substrate processing method and apparatus capable of reducing the flow rate of a process fluid.
Technical scheme for solving problems
The invention provides a substrate processing method. In one embodiment, a substrate processing method includes the steps of: rotating the substrate; and forming a liquid film by supplying a process fluid to an upper surface of the substrate, a thickness of the liquid film on the substrate being adjusted to a set thickness during rotation of the substrate.
In an embodiment, the set thickness may be 2mm or less.
In an embodiment, the adjustment of the set thickness may be achieved by adjusting the rotational speed of the substrate.
In an embodiment, the rotation speed of the substrate may be 30rpm or more and 200rpm or less.
In an embodiment, the adjustment of the set thickness may be achieved by adjusting the discharge amount per unit time of the process fluid supplied to the substrate. In one embodiment, the process fluid may be discharged per unit time at a rate of 100cc/min or more and 500cc/min or less.
In an embodiment, the liquid film forming step may be the following steps: the nozzle is reciprocated between a position spaced apart from the center of the substrate by a predetermined distance and an edge of the substrate to discharge the process fluid.
In an embodiment, the liquid film forming step may be the following steps: the nozzle is reciprocated between a position spaced apart from the center of the substrate by a predetermined distance and a position spaced apart from the edge of the substrate by a predetermined distance, and discharges the process fluid.
In an embodiment, the aperture of the substrate may be 300mm or more, and the reciprocating movement interval of the nozzle may be an interval between a position spaced apart from the center of the substrate by 20mm or more and 70mm or less and a position spaced apart from the edge of the substrate by 20mm or more and 70mm or less.
In one embodiment, the process fluid may be supplied after being heated to the first temperature.
In an embodiment, the first temperature may be above 150 ℃ and below 175 ℃.
In an embodiment, all or part of the region of the liquid film may be heated to the second temperature by a heating unit provided under the substrate.
In an embodiment, the second temperature may be above 175 ℃ and below 300 ℃.
In one embodiment, the process fluid may be phosphoric acid.
The present invention also provides a substrate processing apparatus. In one embodiment, a substrate processing apparatus includes: a processing container having a processing space formed therein; a substrate supporting unit located in the processing space and used for supporting and rotating a substrate; a process fluid supply unit for supplying a process fluid to a substrate supported by the substrate support unit; and a controller, wherein the controller controls in such a manner that the thickness of the liquid film on the substrate is adjusted to a set thickness during rotation of the substrate by controlling the substrate supporting unit and the process fluid supplying unit.
In an embodiment, the adjustment of the set thickness may be achieved by adjusting the discharge amount per unit time of the process fluid supplied to the substrate or the rotational speed of the substrate.
In an embodiment, the process fluid supply unit may include: a nozzle for ejecting the process fluid toward a surface of a substrate; and a nozzle moving part provided such that the nozzle can move between an inner side and an outer side of the process container, wherein the controller controls the nozzle moving part in such a manner that the nozzle reciprocates between a position spaced apart from a center of the substrate by a prescribed distance and an edge of the substrate and supplies a process fluid.
In an embodiment, the controller may control the nozzle moving part in such a manner that the nozzle reciprocates between a position spaced apart from the center of the substrate by a prescribed distance and a position spaced apart from the edge of the substrate by a prescribed distance and supplies the process fluid.
In an embodiment, the aperture of the substrate may be 300mm or more, and the reciprocating movement interval of the nozzle may be an interval between a position spaced apart from the center of the substrate by 20mm or more and 70mm or less and a position spaced apart from the edge of the substrate by 20mm or more and 70mm or less.
In one embodiment, the process fluid may be discharged per unit time at a rate of 100cc/min or more and 500cc/min or less.
In an embodiment, the rotation speed of the substrate using the substrate supporting unit may be 30rpm or more and 200rpm or less.
In an embodiment, a heating unit provided within the substrate supporting unit for heating the substrate may be further included, the heating unit for heating all or part of the region of the liquid film to above 175 ℃ and below 200 ℃.
In an embodiment, the temperature of the process fluid discharged from the nozzle may be 150 ℃ or more and 175 ℃ or less.
In one embodiment, the process fluid may be phosphoric acid.
Effects of the invention
According to an embodiment of the present invention, substrate processing efficiency can be improved.
Furthermore, according to an embodiment of the present invention, there is an effect that the flow rate of the process fluid can be cut down.
In addition, according to an embodiment of the present invention, there is an effect of improving an etching rate.
Drawings
Fig. 1 is a plan view schematically showing an example of a substrate processing apparatus provided with a substrate processing device according to an example of the present invention.
Fig. 2 is a plan view of the substrate processing apparatus of fig. 1.
Fig. 3 is a cross-sectional view of the substrate processing apparatus of fig. 1.
Fig. 4 is a cross-sectional view illustrating an embodiment of the substrate support unit and the heating unit of fig. 2.
Fig. 5 is a view schematically showing a liquid film formed on a substrate by supplying a process fluid to the substrate.
Fig. 6 is a diagram illustrating a cross-sectional view of I-I' of fig. 5 and movement of the nozzle.
FIG. 7 is a diagram showing the path of a process fluid moving and forming a liquid film.
Fig. 8 is a graph schematically showing a temperature profile of each region.
Detailed Description
Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various ways, and it should be construed that the scope of the present invention is not limited by the following embodiments. This embodiment is provided for a more complete description by one of ordinary skill in the art. Accordingly, the shapes of elements in the drawings are exaggerated for emphasis on more specific illustrations.
Fig. 1 is a plan view schematically showing a substrate processing apparatus 1 of the present invention.
Referring to fig. 1, a substrate processing apparatus 1 includes an indexing module 1000 and a process processing module 2000. The indexing module 1000 includes a load port 1200 and a transfer frame 1400. The load port 1200, transfer frame 1400 and process modules 2000 are arranged in a row. Hereinafter, the direction in which the load port 1200, the transfer frame 1400, and the process modules 2000 are arranged is referred to as a first direction 12. The direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14, and the direction perpendicular to a plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.
A carrier 1300 accommodating the substrate W is mounted on the load port 1200. A plurality of load ports 1200 are provided and the load ports 1200 are arranged in a column along the second direction 14. In fig. 1 it is shown that four load ports 1200 are provided. However, the number of load ports 1200 may be increased or decreased depending on the process efficiency, the floor space, and the like of the process module 2000. A groove (not shown) provided to support the edge of the substrate W is formed in the carrier 1300. A plurality of grooves are provided along the third direction 16. The substrates W are stacked in the carrier 1300 in a state of being spaced apart from each other in the third direction 16. As the carrier 1300, a front opening unified pod (Front Opening Unified Pod; FOUP) may be used.
The process module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a process chamber 2600. The transfer chamber 2400 is arranged with its length direction parallel to the first direction 12. Each process chamber 2600 is arranged in the second direction 14 on one side and the other side of the transfer chamber 2400. The process chamber 2600 located at one side of the transfer chamber 2400 and the process chamber 2600 located at the other side of the transfer chamber 2400 are provided to be symmetrical to each other with respect to the transfer chamber 2400. A portion of the process chambers 2600 are arranged along the length of the transfer chamber 2400. Further, a part of the process chambers 2600 are arranged to be stacked on each other. That is, the process chambers 2600 are arranged in an array of a×b (a and B are natural numbers of 1 or more, respectively) on one side of the transfer chamber 2400. Here, a is the number of process chambers 2600 providing one column in the first direction 12, and B is the number of process chambers 2600 providing one column in the third direction 16. In the case where four or six process chambers 2600 are provided at one side of the transfer chamber 2400, the process chambers 2600 may be arranged in a2×2 or 3×2 arrangement. The number of process chambers 2600 may also be increased or decreased. Unlike the above, the process chamber 2600 may be provided only at one side of the transfer chamber 2400. In addition, unlike the above, the process chamber 2600 may be provided in a single layer on one side and two sides of the transfer chamber 2400.
The buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer space 2200 provides a space for staying the substrate W before the substrate W is transferred between the moving chamber 2400 and the transfer frame 1400. The buffer unit 2200 is provided therein with grooves (not shown) in which the substrates W are placed, and a plurality of grooves (not shown) are provided to be spaced apart from each other in the third direction 16. The surface of the buffer unit 2200 facing the transfer frame 1400 and the surface facing the transfer chamber 2400 are open, respectively.
The transfer frame 1400 transfers the substrate W between the carrier 1300 mounted on the load port 1200 and the buffer unit 2200. An indexing guide 1420 and an indexing robot 1440 are provided on the transfer frame 1400. The indexing rail 1420 is provided with its length direction parallel to the second direction 14. The indexing robot 1440 is provided on the indexing rail 1420, and the indexing robot 1440 moves linearly along the indexing rail 1420 in the second direction 14. The rotation unit robot 1440 has a base 1441, a main body 1442, and an index arm 1443. The base 1441 is provided so as to be movable along the indexing guide 1420. Body 1442 is coupled with base 1441. The main body 1442 is provided to be movable on the base 1441 in the third direction 16. Further, a main body 1442 is provided to be rotatable on the base 1441. An indexing arm 1443 is provided in combination with the main body 1442 and is capable of advancing and retracting movement relative to the main body 1442. A plurality of index arms 1443 are provided, and each index arm 1443 is provided in a single driving manner. The index arms 1443 are arranged to be stacked in a state of being spaced apart from each other in the third direction 16. Some of the index arms 1443 may be used when transporting the substrate W from the process module 2000 to the carrier 1300, and another may be used when transporting the substrate W from the carrier 1300 to the process module 2000.
The transfer chamber 2400 transfers the substrate W between the buffer unit 2200 and the process chamber 2600 and between the process chambers 2600. A rail 2420 and a mainframe robot 2440 are provided in the transfer chamber 2400. The guide rail 2420 is arranged with its length direction parallel to the first direction 12. The master robot 2440 is disposed on the rail 2420 and the master robot 2440 moves linearly on the rail 2420 in the first direction 12. The main robot 2440 has a base 2441, a main body 2442, and a main arm 2443. The base 2441 is provided to be movable along the guide rail 2420. The body 2442 is coupled to the base 2441. The body 2442 is provided to be movable on the base 2441 in the third direction 16. Further, the main body 2442 is provided to be rotatable on the base 2441. A main arm 2443 is coupled to the main body 2442, and the main arm 2443 is provided to be capable of forward and backward movement with respect to the main body 2442. A plurality of main arms 2443 are provided, each main arm 2443 being provided in a separately driven manner. The main arms 2443 are arranged to be stacked in a state of being spaced apart from each other in the third direction 16. The main arm 2443 used when transporting the substrate W from the buffer unit 2200 to the process chamber 2600 and the main arm 2443 used when transporting the substrate W from the process chamber 2600 to the buffer chamber 2200 may be different from each other.
A substrate processing apparatus 10 that performs a liquid processing process on a substrate W is provided in the process chamber 2600. The substrate processing apparatus 10 provided in each of the process chambers 2600 may have a different structure according to the kind of liquid processing process performed. Alternatively, the substrate processing apparatus 10 within each process chamber 2600 may have the same structure. Alternatively, the process chambers 2600 may be divided into a plurality of groups, the substrate processing apparatuses 10 provided to the process chambers 2600 belonging to the same group may have the same structure as each other, and the substrate processing apparatuses 10 provided to the process chambers 2600 belonging to different groups may have different structures from each other. For example, in the case where the process chambers 2600 are divided into two groups, a first group of process chambers 2600 may be provided on one side of the transfer chamber 2400 and a second group of process chambers 2600 may be provided on the other side of the transfer chamber 2400. Optionally, a first set of process chambers 2600 may be provided in a lower layer on one side and the other side of the transfer chamber 2400, and a second set of process chambers 2600 may be provided in an upper layer. The first set of process chambers 2600 and the second set of process chambers 2600 may be divided according to the type of chemical or liquid treatment used, respectively.
An apparatus for removing a nitride film of a (strip) substrate W using high-temperature phosphoric acid is illustrated in the following examples. However, the technical idea of the present invention is not limited thereto, and can be applied to various apparatuses that perform processes while rotating the substrate W, such as an etching process.
Fig. 2 is a plan view of the substrate processing apparatus of fig. 1, and fig. 3 is a cross-sectional view of the substrate processing apparatus of fig. 1. Referring to fig. 2 and 3, the substrate processing apparatus 10 includes a chamber 800, a processing container 100, a substrate supporting unit 200, a heating unit 280, a process fluid supply unit 300, a process exhaust part 500, and a lifting unit 600.
The chamber 800 provides a closed interior space.
An air flow supply unit 810 is provided at an upper portion of the chamber 800. The air flow supply unit 810 forms a downdraft inside the chamber 800. The air flow supply unit 810 filters the high humidity outside air and supplies the filtered air into the chamber. High humidity outside air is supplied to the inside of the chamber through the air flow supply unit 810 and forms a descending air flow. The descending air flow provides a uniform air flow to the upper portion of the substrate W, and discharges the pollutants generated during the process of treating the surface of the substrate W by the treating fluid, together with the air, through the recovery tub 110, 120, 130 of the treating container 100 to the process exhaust part 500.
The chamber 800 is divided into a process region 816 and a maintenance refurbishment region 818 by a horizontal partition 814. A process vessel 100 and a substrate support unit 200 are disposed in the process region 816. In addition to the exhaust lines 141, 143, 145 and 510 connected to the processing container 100, a driving section of the elevating unit 600, a driving section connected to the process fluid supply unit 300, a supply line, and the like are provided in the maintenance repair area 818. Maintaining refurbishment area 818 separate from process area 816.
The process container 100 has a cylindrical shape with an opened upper portion, and provides a process space for processing the substrate W. The open upper surface of the process container 100 is provided as an carry-out and carry-in passage for the substrate W. A substrate supporting unit 200 is provided in the process zone. The substrate supporting unit 200 rotates the substrate W in a state of supporting the substrate W when the process is performed.
A lower space to which the exhaust duct 190 is connected is provided at a lower end portion of the process container 100, thereby realizing forced exhaust. First to third recovery tanks 110, 120, 130 into which process fluids and gases scattered on the rotating substrates W are flowed and sucked are arranged in multiple stages in the process container 100.
The annular first to third recovery tanks 110, 120, 130 have exhaust ports H communicating with one common annular space. Specifically, the first to third recovery tanks 110, 120, 130 respectively include a bottom surface having an annular ring shape and a sidewall extending from the bottom surface and having a cylindrical shape. The second recovery tub 120 surrounds the first recovery tub 110 and is disposed to be spaced apart from the first recovery tub 110. The third recovery tub 130 surrounds the second recovery tub 120 and is disposed to be spaced apart from the second recovery tub 120.
The process fluid flowing into the first recovery tank 110 is discharged to the outside through the first recovery line 141. The process fluid flowing into the second recovery tank 120 is discharged to the outside through the second recovery line 143. The process fluid flowing into the third recovery tank 130 is discharged to the outside through the third recovery line 145.
The process fluid supply unit 300 discharges a high temperature chemical for etching the surface of the substrate W, i.e., an etching composition according to an example.
The process fluid nozzle assembly 310 includes a nozzle 311, a nozzle arm 313, a support bar 315, and a nozzle driver 317. The nozzle 311 is supplied with the process fluid through the supply part 320. The nozzle 311 discharges the process fluid toward the front surface of the substrate W. The nozzle arm 313 is provided as an arm long in length in one direction, and the nozzle 311 is attached to the tip of the nozzle arm 313. The nozzle arm 313 supports the nozzle 311. A support bar 315 is mounted at the rear end of the nozzle arm 313. The support bar 315 is provided at a lower portion of the nozzle arm 313. The support bar 315 is arranged perpendicular to the nozzle arm 313. A nozzle driver 317 is provided at a lower end of the support bar 315. The nozzle driver 317 rotates the support bar 315 about a longitudinal axis of the support bar 315. By the rotation of the support lever 315, the nozzle arm 313 and the nozzle 311 are oscillated about the support lever 315. The nozzle 311 can be swung between the outside and the inside of the process container 100. The nozzle 311 is capable of oscillating and discharging the process fluid in a region between the center and edge regions of the substrate W.
The process exhaust 500 is responsible for treating the exhaust inside the container 100. As an example, the process vent 500 is used to provide a vent pressure (suction pressure) to a recovery tank for recovering a process fluid among the first to third recovery tanks 110, 120, 130 at the time of a process. The process exhaust 500 includes an exhaust line 510 connected to the exhaust pipe 190, and a damper 520. The exhaust line 510 receives an exhaust pressure from an exhaust pump (not shown), and the exhaust line 510 is connected to a main exhaust line buried in a floor space of the semiconductor production line.
In addition, the process container 100 is combined with a lifting unit 600 that changes the vertical position of the process container 100. The lifting unit 600 linearly moves the process container 100 in the up-down direction. As the process container 100 moves up and down, the relative height of the process container 100 with respect to the substrate support unit 200 is changed.
The elevating unit 600 includes a carriage 612, a moving shaft 614, and a driver 616. The bracket 612 is fixedly provided on the outer wall of the process container 100. A movement shaft 614 that moves in the up-down direction by a driver 616 is fixedly coupled to the bracket 612. The process container 100 is lowered such that the clamping table 210 protrudes toward an upper portion of the process container 100 when the substrate W is loaded onto the clamping table 210 or the substrate W is detached from the clamping table 210. In addition, when the process is performed, the height of the process container 100 is adjusted so that the process fluid can flow into the set recovery tanks 110, 120, 130 according to the kind of the process fluid supplied to the substrate w. The relative vertical position between the process container 100 and the substrate W changes. The process container 100 can vary the types of the process fluid and the contaminated gas to be recovered in the recovery spaces RS1, RS2, and RS 3. According to an embodiment, the elevation unit 600 changes the relative vertical position between the process container 100 and the substrate supporting unit 200 by vertically moving the process container 100.
Fig. 4 is a cross-sectional view illustrating an embodiment of the substrate support unit and the heating unit of fig. 2. Referring to fig. 2 to 4, the substrate support unit 200 supports the substrate W during a process, and the substrate support unit 200 can be rotated by the driving part 240 during the process.
The substrate support unit 200 includes a clamping table 210, a quartz window 220, a rotating part 230, and a rear nozzle 240.
The clamping table 210 has a circular upper face. The clamping table 210 rotates in conjunction with the rotating portion 230. A clamp pin 212 is provided at an edge of the clamp table 210. The clamp pins 212 are provided to penetrate through the quartz window 220 and protrude toward the upper side of the quartz window 220. The chucking pins 212 align the substrates W so that the substrates W supported by the plurality of support pins 224 are placed at fixed positions. The clamp pins 212 contact the side portions of the substrate W to prevent the substrate W from being separated from the fixed position when the process is performed.
The rotation part 230 has a hollow shape, and the rotation part 230 rotates the clamping table 210 by being coupled to the clamping table 210.
The quartz window 220 is located at an upper portion of the substrate W and the clamping stage 210. The quartz window 220 is provided to protect the heating member 250. The quartz window 220 may be provided in a transparent manner. The quartz window 220 can rotate with the clamping table 210. The quartz window 220 includes support pins 224. The support pins 224 are disposed at the upper face edge portion of the quartz window 220 with a prescribed interval. The support pins 224 are provided to protrude from the quartz window 220 toward the upper side. The support pins 224 support the lower surface of the substrate W such that the substrate W is supported in a state spaced upward from the quartz window 220.
The rear nozzle 240 is provided to spray the process fluid toward the rear surface of the substrate W. The rear nozzle 240 includes a nozzle body 242 and a process fluid ejection portion 244. The process fluid injector 244 is located at the central upper portion of the clamping table 210 and the quartz window 220. The nozzle body 242 is installed to penetrate through the hollow rotating part 230, and a process fluid moving line, a gas supply line, and a purge gas supply line may be provided inside the nozzle body 242. The process fluid moving line supplies the process fluid for treating the rear surface of the substrate W to the process fluid spraying part 244, supplies the nitrogen gas for adjusting the etching uniformity to the rear surface of the substrate W to the gas supply line, and supplies the nitrogen purge gas to the purge gas supply line, thereby preventing the process fluid from penetrating between the quartz window 220 and the nozzle body 242.
The heating unit 280 is disposed inside the substrate supporting unit 200. The heating unit 280 heats the substrate W in process. The heating unit 280 includes a heating member 250, a reflecting member 260, and a temperature control part 270.
The heating part 250 is disposed at an upper portion of the clamping stage 210. The heating members 250 are provided with different diameters from each other. A plurality of heating members 250 are provided. The heating member 250 may be provided in a ring shape. The heating part 250 is selected by a method capable of transferring heat using an infrared lamp (IR lamp), an ultraviolet lamp (UV lamp), a Light Emitting Diode (LED), a laser (laser), a heater (heater), or the like. As an example, the heating member 250 may be provided as a plurality of lamps 252 provided in a ring shape. Each lamp 252 is provided with a temperature control unit 270, and can be controlled individually.
The heating element 250 may be subdivided into concentric zones. A lamp 252 capable of heating each region individually is provided in each region. The lamps 252 may be provided in the shape of rings concentrically arranged at different radial distances with respect to the center of the clamping table 210. In the present embodiment, six lamps 252 are illustrated, but this is merely an example, and the number of lamps may be increased or decreased according to the degree of temperature control required. The heating part 250 can be controlled in such a manner as to continuously increase or decrease the temperature according to the radius of the substrate W during the process by controlling the temperature of each individual region. For this purpose, a temperature control part 270 for individually checking the temperature of each lamp 252 is provided on the reflecting member 260. As an example, in a structure in which the lamp 252 rotates together with the clamping table 210, a slip ring may be used to supply power to the heating member 250.
The reflecting member 260 is provided between the heating member 250 and the clamping stage 210. The reflection member 260 includes a lower reflection plate 261, an inner reflection plate 263, a main reflection plate 265, and an outer reflection plate 267. The reflecting member 260 reflects and transmits heat generated by the lamps 252 to the upper substrate W. The reflection member 260 may be supported by the nozzle body 242 provided through the central space of the rotation part 230. The reflecting member 260 is formed to extend toward the lower side at the inner end. The reflecting member 260 is provided as a stationary type not to rotate together with the clamping stage 210.
The temperature control unit 270 is arranged in a line on the reflecting member 260 in order to measure the temperatures of the lamps 252. The temperature control part 270 includes a support plate 272 and a temperature sensing element 273. The temperature control unit 270 is capable of measuring and controlling the temperature by mounting the thin temperature control unit 270 on the reflecting member 260.
The support plate 272 is formed to extend toward one side of the fixing block in a thin (silm) form. The support plate 272 is disposed to be spaced apart from an upper surface of the lower side reflection plate 261, and a through hole 269 is formed on a portion of the lower side reflection plate 261 opposite to the support plate 272. The cooling gas flowing through the bottom surface of the lower reflecting plate 261 can cool the temperature control portion 270 through the through holes 269.
A controller (not shown) controls the operation of the above-described structure.
Fig. 5 is a view schematically showing a liquid film formed on a substrate by supplying a process fluid to the substrate, and fig. 6 is a view showing an I-I' sectional view of fig. 5 and a movement of a nozzle. FIG. 7 is a diagram showing the path of a process fluid moving and forming a liquid film. The description will be given with reference to fig. 5, 6 and 7.
The process fluid according to an embodiment may be phosphoric acid. Phosphoric acid can function as an etching solution. The process fluid may be an etching composition comprised of a mixture of phosphoric acid and additives.
The nozzle 311 may reciprocate in a region (C-E region) between the center C of the substrate and the edge E of the substrate. The nozzle 311 reciprocates between a point P1 spaced apart from the center C of the substrate by a predetermined distance and a point P2 spaced apart from the edge E of the substrate between the C-E regions, and discharges the etching liquid. During the supply of the etching liquid to the substrate, the substrate is rotated. The supplied etching liquid forms a liquid film on the surface of the substrate.
According to an embodiment, with respect to a substrate having a caliber of 300mm, the reciprocating movement range of the nozzle 311 is from a position spaced apart from the center C of the substrate by 20mm or more and 70mm or less to a position spaced apart from the edge E of the substrate by 20mm or more and 70mm or less. For example, C may be 50mm from P1 and E may be 50mm from P2.
By restricting the discharge of new process fluid to the center of the substrate, the time for replacement of the discharged process fluid with the newly discharged process fluid can be prolonged. In addition, by restricting the discharge of new process fluid to the edge region of the substrate, the time for supplying new discharge chemical liquid to the edge region can be prolonged to obtain a fluid wake of high temperature (175 ℃ C. To 300 ℃ C.) in the rotational direction in the P2-E region. The fluid wake increases the etch rate of the edge region.
The etching liquid can be heated before contacting the substrate W. The temperature of the etching liquid (first temperature) to be supplied is 150 ℃ to 175 ℃. In the case where the etching solution is supplied in a heated state at a temperature exceeding 175 ℃, there is a possibility that the apparatus may be damaged.
The liquid film of the etching liquid formed on the surface of the substrate W is heated to the second temperature. The heating part 250 is heated to a third temperature of 500 ℃ or more and 1000 ℃ or less to heat the liquid film, thereby providing heat to the substrate.
The liquid film may be heated to above 175 ℃ and below 300 ℃. The etching rate is low when the temperature of the liquid film is 175 ℃ or lower, and the wafer breakage or selection is low when the temperature of the liquid film is 300 ℃ or higher. If the temperature of the liquid film is 400 ℃ or higher, the substrate may burst.
When the nozzle scans between the P1 point and the P2 point and discharges the etching liquid, the substrate is substantially separated and formed into three regions according to the liquid film temperature and the liquid film thickness. When a new etching liquid just discharged contacts the substrate, the etching liquid traces a spiral pattern and gradually spreads to the edge region of the substrate to form a liquid film (see fig. 7). Since the etching liquid is continuously supplied in the region A1 of fig. 5, the temperature of the liquid film is low, and the thickness of the liquid film is thick, about 2mm or more. In the A2 region, the scattered and remaining liquid film is further heated by the substrate. In the A3 region, the liquid film in the A2 region further scatters and becomes thinner to about 2mm or less, and is further heated to a high temperature by the substrate. In A3, the temperature of the liquid film is in the range of 200 ℃ to 300 ℃.
TABLE 1
< liquid film thickness and temperature per region of substrate >
Figure BDA0002184492490000121
In order to adjust the liquid film temperature to 175 ℃ to 300 ℃, the rotation speed of the substrate and the discharge flow rate of the etching liquid are adjusted. The rotation speed (first rotation speed) of the substrate is 30rpm or more and 200rpm or less. The discharge flow rate (first flow rate) of the etching liquid is 100cc/min or more and 500cc/min or less. When the etching solution is discharged at a flow rate of less than 100cc/min, the substrate may be broken due to excessive heating (over-heated). When the etching solution is discharged at a flow rate of more than 500cc/min, the thickness of the water film becomes thick, and the etching solution cannot reach the set temperature range, which may reduce the substrate processing efficiency.
Fig. 8 is a graph schematically showing a temperature profile of each region. The substrate region of fig. 8 may be the region A3 of fig. 5. In the case where the heating member 250 is used to release the heat of the third temperature and heat the substrate W, the liquid film may be heated to the second temperature. According to one embodiment, the third temperature is 900 ℃, and the second temperature is 220 ℃.
As in the above embodiments, the liquid film thickness is adjusted by adjusting the rotation speed of the substrate, the heating temperature of the substrate, and the driving range of the nozzle, thereby increasing the heating efficiency of the etching liquid. As the heating efficiency increases, a higher etching rate can be obtained.
In addition, the nozzle driving range reduces the discharge flow rate, and even if the substrate is rotated at a low rotation speed, uniform substrate processing can be performed.
The foregoing detailed description illustrates the invention. In addition, the foregoing shows and describes preferred embodiments of the invention that can be used in a variety of different combinations, modifications and environments. That is, variations or modifications may be made within the scope of the inventive concepts disclosed herein, within the scope of the equivalent disclosure as written, and/or within the skill or knowledge of the person skilled in the art. The embodiments described above are illustrative of the best mode for carrying out the technical idea of the present invention, and various modifications required for the specific application field and use of the present invention can be made. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Furthermore, other implementations are also contemplated as within the scope of the following claims.
Description of the reference numerals
10: substrate processing apparatus
100: treatment vessel
200: substrate supporting unit
260: reflection member
280: heating unit
300: process fluid supply unit
600: and a lifting unit.

Claims (19)

1. A substrate processing method comprising the steps of:
rotating the substrate; and
a liquid film is formed by supplying a process fluid to the upper surface of the substrate,
during rotation of the substrate, the thickness of the liquid film on the substrate is adjusted to a set thickness,
wherein the liquid film forming step is the following steps: reciprocating the nozzle between a position spaced apart from the center of the substrate by a predetermined distance and a position spaced apart from the edge of the substrate by a predetermined distance to discharge the process fluid,
wherein the process fluid is supplied after being heated to a first temperature,
wherein all or a partial region of the liquid film is heated to a second temperature by a heating unit provided below the substrate.
2. The substrate processing method according to claim 1, wherein,
the set thickness is 2mm or less.
3. The substrate processing method according to claim 1, wherein,
the adjustment of the set thickness is achieved by adjusting the rotational speed of the substrate.
4. The substrate processing method according to claim 3, wherein,
the rotation speed of the substrate is 30rpm or more and 200rpm or less.
5. The substrate processing method according to claim 1, wherein,
the adjustment of the set thickness is achieved by adjusting the discharge amount per unit time of the process fluid supplied to the substrate.
6. The substrate processing method according to claim 5, wherein,
the discharge amount per unit time of the process fluid is 100cc/min or more and 500cc/min or less.
7. The substrate processing method according to claim 1, wherein,
the caliber of the substrate is more than 300mm,
the reciprocating movement section of the nozzle is a section between a position spaced from the center of the substrate by 20mm or more and 70mm or less and a position spaced from the edge of the substrate by 20mm or more and 70mm or less.
8. The substrate processing method according to claim 1, wherein,
the first temperature is 150 ℃ or higher and 175 ℃ or lower.
9. The substrate processing method according to claim 1, wherein,
the second temperature is 175 ℃ to 300 ℃.
10. The substrate processing method according to claim 1, wherein,
the process fluid is phosphoric acid.
11. A substrate processing method comprising the steps of:
rotating the substrate; and
a liquid film is formed by supplying phosphoric acid to the upper surface of the substrate,
during the rotation of the substrate, the thickness of the liquid film on the surface of the substrate is adjusted to 2mm or less,
the liquid film forming step comprises the following steps: reciprocating the nozzle between a position spaced apart from the center of the substrate by a predetermined distance and a position spaced apart from the edge of the substrate by a predetermined distance to discharge the process fluid,
wherein the process fluid is supplied after being heated to a first temperature,
wherein all or a partial region of the liquid film is heated to a second temperature by a heating unit provided below the substrate.
12. A substrate processing apparatus comprising:
a processing container having a processing space formed therein;
a substrate supporting unit located in the processing space and used for supporting and rotating a substrate;
a process fluid supply unit for supplying a process fluid to a substrate supported by the substrate support unit; and
the controller is used for controlling the operation of the controller,
wherein the controller is controlled in such a manner that the thickness of the liquid film on the substrate is adjusted to a set thickness during the rotation of the substrate by controlling the substrate supporting unit and the process fluid supplying unit,
wherein the process fluid supply unit comprises:
a nozzle for ejecting the process fluid toward a surface of a substrate; and
a nozzle moving member configured to enable the nozzle to move between an inside and an outside of the process container,
wherein the controller controls the nozzle moving part in such a manner that the nozzle reciprocates between a position spaced apart from the center of the substrate by a prescribed distance and a position spaced apart from the edge of the substrate by a prescribed distance and supplies a process fluid,
wherein the process fluid is supplied after being heated to a first temperature,
wherein all or a partial region of the liquid film is heated to a second temperature by a heating unit provided below the substrate.
13. The substrate processing apparatus according to claim 12, wherein,
the adjustment of the set thickness is achieved by adjusting the discharge amount per unit time of the process fluid supplied to the substrate or the rotational speed of the substrate.
14. The substrate processing apparatus according to claim 12, wherein,
the caliber of the substrate is more than 300mm,
the reciprocating movement section of the nozzle is a section between a position spaced from the center of the substrate by 20mm or more and 70mm or less and a position spaced from the edge of the substrate by 20mm or more and 70mm or less.
15. The substrate processing apparatus according to claim 12, wherein,
the discharge amount per unit time of the process fluid is 100cc/min or more and 500cc/min or less.
16. The substrate processing apparatus according to claim 12, wherein,
the substrate supporting unit is used for rotating the substrate at a speed of 30rpm to 200 rpm.
17. The substrate processing apparatus according to claim 12, wherein,
the heating unit is provided in the substrate supporting unit and is used for heating the substrate,
wherein the heating unit is used for heating all or part of the area of the liquid film to more than 175 ℃ and less than 200 ℃.
18. The substrate processing apparatus according to claim 12, wherein,
the temperature of the process fluid supplied from the process fluid supply unit is 150 ℃ or higher and 175 ℃ or lower.
19. The substrate processing apparatus according to claim 12, wherein,
the process fluid is phosphoric acid.
CN201910809061.5A 2018-08-29 2019-08-29 Substrate processing method and substrate processing apparatus Active CN110875180B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0102296 2018-08-29
KR1020180102296A KR102276005B1 (en) 2018-08-29 2018-08-29 Method and apparatus for treating substrate

Publications (2)

Publication Number Publication Date
CN110875180A CN110875180A (en) 2020-03-10
CN110875180B true CN110875180B (en) 2023-07-07

Family

ID=69717265

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910809061.5A Active CN110875180B (en) 2018-08-29 2019-08-29 Substrate processing method and substrate processing apparatus

Country Status (2)

Country Link
KR (1) KR102276005B1 (en)
CN (1) CN110875180B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111403317B (en) * 2020-03-18 2023-10-13 北京北方华创微电子装备有限公司 Rotating assembly and ultraviolet heat treatment equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9808476D0 (en) * 1997-07-25 1998-06-17 Samsung Electronics Co Ltd Photoresist coating apparatus and method
CN101116176A (en) * 2005-02-07 2008-01-30 株式会社荏原制作所 Substrate processing method, substrate processing apparatus and control program
JP2012186221A (en) * 2011-03-03 2012-09-27 Tokyo Electron Ltd Etching method, etching apparatus, and storage medium
JP2013251335A (en) * 2012-05-30 2013-12-12 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
CN103996620A (en) * 2013-02-15 2014-08-20 大日本网屏制造株式会社 Substrate processing apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6242056B2 (en) * 2013-02-15 2017-12-06 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment
JP6222817B2 (en) * 2013-09-10 2017-11-01 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing apparatus
KR101681183B1 (en) * 2014-07-11 2016-12-02 세메스 주식회사 Apparatus for treating a substrate
KR101885107B1 (en) * 2015-06-30 2018-08-06 세메스 주식회사 Method and Apparatus for treating a substrate
JP6814653B2 (en) * 2017-02-09 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing equipment
JP6397095B2 (en) * 2017-08-16 2018-09-26 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9808476D0 (en) * 1997-07-25 1998-06-17 Samsung Electronics Co Ltd Photoresist coating apparatus and method
CN101116176A (en) * 2005-02-07 2008-01-30 株式会社荏原制作所 Substrate processing method, substrate processing apparatus and control program
JP2012186221A (en) * 2011-03-03 2012-09-27 Tokyo Electron Ltd Etching method, etching apparatus, and storage medium
JP2013251335A (en) * 2012-05-30 2013-12-12 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
CN103996620A (en) * 2013-02-15 2014-08-20 大日本网屏制造株式会社 Substrate processing apparatus

Also Published As

Publication number Publication date
CN110875180A (en) 2020-03-10
KR20200026364A (en) 2020-03-11
KR102276005B1 (en) 2021-07-14

Similar Documents

Publication Publication Date Title
KR101681183B1 (en) Apparatus for treating a substrate
US11569100B2 (en) Substrate heating unit and substrate processing apparatus having the same
KR101605717B1 (en) Apparatus and method for treating substrate
KR102779268B1 (en) Support unit, substrate processing apparatus including same
KR102695406B1 (en) Substrate heating unit
US20220181168A1 (en) Supporting unit and substrate treating apparatus including the same
KR101543699B1 (en) Substrate treating apparatus
KR102229786B1 (en) Apparatus and method for treating a substrate
CN110875180B (en) Substrate processing method and substrate processing apparatus
TWI819405B (en) Support unit and apparatus for treating substrate
KR102037908B1 (en) Substrate heating unit and substrate processing apparatus using the same
KR102152904B1 (en) Apparatus and method for treating a substrate
CN112599439B (en) Support unit, substrate processing apparatus including the same, and substrate processing method
KR102621848B1 (en) Support unit and apparatus for treating substrate
KR20190037835A (en) Substrate heating unit and substrate processing apparatus using the same
KR102054222B1 (en) Substrate heating unit
KR20150066289A (en) Substrate heating unit
KR102331260B1 (en) Method and apparatus for treating substrate
KR20170026901A (en) Apparatus and method for treating a substrate
KR102201877B1 (en) Substrate supporting unit and substrate processing apparatus using the same
US12278121B2 (en) Support unit, substrate treating apparatus including the same, and substrate treating method
KR20190132740A (en) Substrate supporting unit and substrate processing apparatus using the same
KR102258247B1 (en) Substrate heating unit
US20210050235A1 (en) Support unit, substrate treating apparatus including the same, and substrate treating method
KR20200056969A (en) Substrate supporting unit and substrate processing apparatus using the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant