CN110868183B - Resonator and filter - Google Patents
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- CN110868183B CN110868183B CN201910328530.1A CN201910328530A CN110868183B CN 110868183 B CN110868183 B CN 110868183B CN 201910328530 A CN201910328530 A CN 201910328530A CN 110868183 B CN110868183 B CN 110868183B
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- 239000000758 substrate Substances 0.000 claims abstract description 144
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 54
- 230000007704 transition Effects 0.000 claims description 34
- 238000002161 passivation Methods 0.000 claims description 24
- 229910052750 molybdenum Inorganic materials 0.000 claims description 19
- 239000010955 niobium Substances 0.000 claims description 17
- 229910052721 tungsten Inorganic materials 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052741 iridium Inorganic materials 0.000 claims description 13
- 229910052758 niobium Inorganic materials 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- -1 scandium aluminum Chemical group 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910001257 Nb alloy Inorganic materials 0.000 claims 2
- 230000001965 increasing effect Effects 0.000 abstract description 16
- 239000013078 crystal Substances 0.000 description 29
- 238000006243 chemical reaction Methods 0.000 description 27
- 238000007254 oxidation reaction Methods 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 230000003647 oxidation Effects 0.000 description 15
- 230000008859 change Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000035772 mutation Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 230000010360 secondary oscillation Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LUKDNTKUBVKBMZ-UHFFFAOYSA-N aluminum scandium Chemical compound [Al].[Sc] LUKDNTKUBVKBMZ-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to the technical field of semiconductors and discloses a resonator and a filter. The multilayer structure is formed on the substrate and comprises a piezoelectric layer, a first electrode and a second electrode; the first electrode and the second electrode are respectively arranged at two sides of the piezoelectric layer, the first electrode comprises a first conductive layer and a second conductive layer, the second electrode comprises a third conductive layer and a fourth conductive layer, and acoustic impedances of the first electrode and the second electrode are increased along with the increase of the distance from the piezoelectric layer; meanwhile, a cavity is formed between the substrate and the multilayer structure, the cavity including a lower half cavity below the upper surface of the substrate and an upper half cavity protruding beyond the upper surface of the substrate and toward the multilayer structure. The resonator is provided with the cavity with the lower half cavity and the upper half cavity, the whole lower half cavity is positioned below the upper surface of the substrate, and the whole upper half cavity is positioned above the upper surface of the substrate, so that a novel resonator structure is formed, and the resonator has better performance.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a resonator and a filter.
Background
Resonators may be used in a variety of electronic applications to implement signal processing functions, for example, some cellular telephones and other communication devices use resonators to implement filters for transmitted and/or received signals. Several different types of resonators may be used depending on the application, such as Film Bulk Acoustic Resonators (FBARs), coupled resonator filters (SBARs), stacked Bulk Acoustic Resonators (SBARs), dual Bulk Acoustic Resonators (DBARs), and solid State Mounted Resonators (SMRs).
A typical acoustic resonator includes an upper electrode, a lower electrode, a piezoelectric material positioned between the upper and lower electrodes, an acoustic reflecting structure positioned below the lower electrode, and a substrate positioned below the acoustic reflecting structure. The region where the three layers of materials of the upper electrode, the piezoelectric layer, and the lower electrode overlap in the thickness direction is generally defined as the effective region of the resonator. When a voltage signal with a certain frequency is applied between the electrodes, sound waves which propagate in the vertical direction can be generated between the upper electrode and the lower electrode in the effective area due to the inverse piezoelectric effect of the piezoelectric material, and the sound waves are reflected back and forth between the interface between the upper electrode and the air and the sound reflection structure under the lower electrode and resonate at a certain frequency.
In general, the parallel resistance R of the resonator can be passed p Series resistance R s Quality factor Q (called "Q factor") and electromechanical coupling coefficient kt 2 To evaluate the performance of the resonator. With a higher R p Lower R s And higher Q-factor resonators are considered to have superior performance, and therefore,it is desirable to have superior performance by modifying the resonator.
Disclosure of Invention
Based on the above problems, the present invention provides a resonator and a filter comprising an acoustic redistribution layer.
A first aspect of an embodiment of the present invention provides a resonator including:
a substrate;
a piezoelectric layer having a first surface and a second surface;
a first electrode disposed adjacent to the first surface, the first electrode comprising a first conductive layer and a second conductive layer; a first conductive layer disposed adjacent to the piezoelectric layer having a first acoustic impedance; the second conductive layer is arranged on one side of the first conductive layer opposite to the piezoelectric layer and has a second sound impedance larger than the first sound impedance;
a second electrode disposed adjacent to the second surface, the second electrode comprising a third conductive layer and a fourth conductive layer; a third conductive layer disposed adjacent to the piezoelectric layer having a third acoustic impedance; a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer, having a fourth acoustic impedance greater than the third acoustic impedance;
Wherein the first conductive layer and the third conductive layer are formed of a first material, and the second conductive layer and the fourth conductive layer are formed of a second material;
a cavity is formed between the substrate and a multilayer structure, the cavity including a lower half cavity below the upper surface of the substrate and an upper half cavity protruding beyond the upper surface of the substrate and toward the multilayer structure, the multilayer structure including the piezoelectric layer, the first electrode, and the second electrode.
A second aspect of an embodiment of the present invention provides a resonator including:
a substrate;
a piezoelectric layer having a first surface and a second surface;
a first electrode disposed adjacent to the first surface, the first electrode comprising a first conductive layer and a second conductive layer; a first conductive layer disposed adjacent to the piezoelectric layer having a first acoustic impedance; the second conductive layer is arranged on one side of the first conductive layer opposite to the piezoelectric layer and has a second sound impedance larger than the first sound impedance;
a second electrode disposed adjacent to the second surface;
a passivation layer disposed on a side of one of the first electrode and the second electrode opposite the piezoelectric layer;
A seed layer disposed on a side of the other of the first electrode and the second electrode opposite the piezoelectric layer;
wherein a cavity is formed between the substrate and a multilayer structure, the cavity including a lower half cavity below an upper surface of the substrate and an upper half cavity protruding beyond the upper surface of the substrate and toward the multilayer structure, the multilayer structure including the piezoelectric layer, the first electrode, the second electrode, the seed layer, and the passivation layer.
A third aspect of the embodiments of the present invention provides a filter comprising any one of the resonators of the first and second aspects of the embodiments of the present invention.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: according to the embodiment of the invention, the cavity with the lower half cavity and the upper half cavity is arranged, the lower half cavity is integrally positioned below the upper surface of the substrate, the upper half cavity is integrally positioned above the upper surface of the substrate, and meanwhile, the acoustic redistribution layer is included, namely, the first electrode comprises the first conductive layer and the second conductive layer, and the second electrode comprises the third conductive layer and the fourth conductive layer, so that a novel resonator structure is formed, and the novel resonator structure has better performance.
Drawings
FIG. 1 is a top view of a resonator according to an embodiment of the invention;
FIG. 2 (a) is a schematic diagram of a resonator according to an embodiment of the invention;
fig. 2 (b) is a schematic structural view of a resonator according to another embodiment of the present invention;
FIG. 2 (c) is an enlarged schematic view of A in FIGS. 2 (a) and 2 (b);
FIG. 3 (a) is a schematic illustration of a multi-layer structure without a redistribution layer;
FIG. 3 (b) is a graph of acoustic impedance distribution for the resonator of FIG. 3 (a);
FIG. 4 (a) is a schematic view of the multi-layer structure of FIG. 2 (a);
FIG. 4 (b) is a graph of acoustic impedance distribution of the resonator of FIG. 4 (a);
FIG. 5 (a) is a schematic diagram of a multilayer structure of a variation of the resonator of the embodiment of the present invention;
FIG. 5 (b) is a graph of acoustic impedance distribution of the resonator of FIG. 5 (a);
FIG. 6 (a) is a schematic diagram of a multilayer structure of a variation of the resonator of the embodiment of the present invention;
FIG. 6 (b) is a graph of acoustic impedance distribution of the resonator of FIG. 6 (a);
FIG. 7 (a) is a schematic diagram of a multilayer structure of a variation of the resonator of the embodiment of the present invention;
FIG. 7 (b) is a graph of acoustic impedance distribution of the resonator of FIG. 7 (a);
FIG. 8 (a) is a schematic diagram of a multilayer structure of a variation of the resonator of the embodiment of the present invention;
FIG. 8 (b) is a graph of acoustic impedance distribution of the resonator of FIG. 8 (a);
Fig. 9 (a) is a schematic view of a multilayer structure of a variation of the resonator of the embodiment of the present invention;
FIG. 9 (b) is a graph of acoustic impedance distribution of the resonator of FIG. 9 (a);
FIG. 10 (a) is a schematic view of a multilayer structure of a variation of the resonator of the embodiment of the present invention;
FIG. 10 (b) is a graph of acoustic impedance distribution of the resonator of FIG. 10 (a);
FIG. 11 is a flow chart of a method of fabricating a resonator according to an embodiment of the invention;
FIG. 12 is a flow chart of yet another method of fabricating a resonator according to an embodiment of the invention;
fig. 13 is a schematic view of a manufacturing process of a resonator according to an embodiment of the invention.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The invention will be described in further detail with reference to the drawings and the detailed description.
An embodiment of the present invention provides a resonator including a substrate, a piezoelectric layer, a first electrode, and a second electrode.
Wherein the piezoelectric layer has a first surface and a second surface.
A first electrode disposed adjacent to the first surface, the first electrode comprising a first conductive layer and a second conductive layer; a first conductive layer disposed adjacent to the piezoelectric layer having a first acoustic impedance; the second conductive layer is disposed on a side of the first conductive layer opposite the piezoelectric layer and has a second acoustic impedance that is greater than the first acoustic impedance.
A second electrode disposed adjacent to the second surface, the second electrode comprising a third conductive layer and a fourth conductive layer; a third conductive layer disposed adjacent to the piezoelectric layer having a third acoustic impedance; a fourth conductive layer is disposed on a side of the third conductive layer opposite the piezoelectric layer, having a fourth acoustic impedance that is greater than the third acoustic impedance.
Wherein the first conductive layer and the third conductive layer are formed of a first material, and the second conductive layer and the fourth conductive layer are formed of a second material.
A cavity is formed between the substrate and a multilayer structure, the cavity including a lower half cavity below the upper surface of the substrate and an upper half cavity protruding beyond the upper surface of the substrate and toward the multilayer structure, the multilayer structure including the piezoelectric layer, the first electrode, and the second electrode.
An Acoustic Redistribution Layer (ARL) is a layer of material added to a multilayer structure to alter the acoustic energy distribution across the multilayer structure, which may cause a change in the electromechanical properties of the resonator, increasing the R of the acoustic resonator p Factor QSub-thereby enhancing the performance of the resonator. The resonator includes a Film Bulk Acoustic Resonator (FBAR), and may also include a Dual Bulk Acoustic Resonator (DBAR) or a solid State Mounted Resonator (SMR), etc.
Referring to fig. 1, the multilayer structure 200 of the resonator is an apodized pentagonal structure (i.e., an asymmetric pentagon) to distribute the density of the secondary oscillation modes over frequency while avoiding strong excitation of any of the secondary oscillation modes at either frequency. In general, the resonator shape is not limited to five sides, but may be quadrangular, pentagonal, and other shapes.
The resonator comprises a top electrode 210 (hereinafter referred to as second electrode), a connection side 401 and an interconnect 402. The connection side 401 is configured to provide an electrical connection to the interconnect 402. The interconnect 402 provides an electrical signal to the top electrode 201 to excite the desired acoustic wave in the piezoelectric layer of the resonator (not shown in fig. 1).
Referring to fig. 1 and 2 (a), the first electrode 230 and the second electrode 210 are electrically connected to an external circuit via corresponding contact pads (not shown), typically formed of a conductive material such as gold or a gold-tin alloy. Extending laterally outward from the multilayer structure 200 are connections (not shown) between the electrodes and contact pads, which are typically formed of a conductive material, such as titanium/tungsten/gold.
Referring to fig. 2 (a), the resonator may be simplified to include a substrate 100 and a multi-layer structure 200.
The substrate 100 may be formed of silicon, gallium arsenide, indium phosphide, or the like. The multilayer structure 200 is formed over the substrate 100, and in one embodiment, the first electrode is disposed under the piezoelectric layer, the second electrode is disposed over the piezoelectric layer, and the multilayer structure 200 includes the first electrode 230, the piezoelectric layer 220, and the second electrode 210 in order from bottom to top. Wherein a cavity 300 is formed between the substrate 100 and the multilayer structure 200, the cavity 300 comprising a lower cavity half 301 below the upper surface of the substrate 100 and an upper cavity half 302 protruding beyond the upper surface of the substrate 100 and towards the multilayer structure 200.
The first electrode 230 includes a bottom conductive layer 230b and a top conductive layer 230a. The second electrode 210 includes a bottom conductive layer 210b and a top conductive layer 210a. The conductive layers of the first electrode 230 and the second electrode 210 disposed adjacent to the piezoelectric layer 220 are formed of a first material having a relatively low resistance, the conductive layers disposed on opposite sides of the piezoelectric layer 220 are formed of a second material having a relatively high resistance, see fig. 4 (a), in one embodiment, the bottom conductive layer 230b, and the top conductive layer 210a may be formed of a material having a relatively high acoustic resistance, such as tungsten (W), having an acoustic resistance of about 100MR, or iridium (Ir, having an acoustic resistance of about 110 MR), while the top conductive layer 230a and the bottom conductive layer 210b may be formed of a material having a relatively low acoustic resistance, such as molybdenum (Mo, having an acoustic resistance of about 65 MR), niobium (Nb, having an acoustic resistance of about 42 MR) or an alloy of molybdenum (Mo) and niobium (Nb) (various alternative materials that may be used in the first electrode 230 and the second electrode 210 may further include aluminum (Al), platinum (Pt), hafnium (Ru), or ruthenium (Hf), depending on the specific ratio of the two materials in the alloy.
In general, acoustic resonators are designed to meet specific characteristic electrical impedance Z0 requirements. The characteristic electrical impedance Z0 is proportional to the acoustic resonator cross-sectional area and inversely proportional to the operating frequency and thickness of the piezoelectric layer. The thickness of the piezoelectric layer is determined mainly by the operating frequency and is simultaneously coupled with the electromechanical coefficient kt 2 Related to the following. Within the applicable limits kt 2 Proportional to the thickness of the piezoelectric layer and inversely proportional to the thickness of the bottom and top electrodes. More specifically, kt 2 Proportional to the fraction of acoustic energy stored in the piezoelectric layer and inversely proportional to the fraction of acoustic energy stored in the electrode, thus having a larger kt 2 Typically having a thick piezoelectric layer and a thin electrode layer. However, in the case of a thick piezoelectric layer, a relatively large cross-sectional area is required to match the required resonator impedance to a certain Z0, resulting in an increase in the cost of the device. Therefore, where other factors are equal, it is generally desirable to minimize the cross-sectional area, thereby reducing costs. To minimize cross-sectional area, the piezoelectric layer may be formed with a higher kt 2 Formed of a material such as scandium aluminum nitride having a scandium concentration of 1% to 10%, so that a piezoelectric layer is relatively thin while maintaining a sufficient kt 2 。
However, this design forces a significant confinement of acoustic energy into the electrode for R p Factor QThe sub-elements are very disadvantageous, and the use of an acoustic redistribution layer may effectively boost the R of the acoustic resonator p And Q factor, which gives the acoustic resonator better performance.
As shown in fig. 3 (a), which is a typical multilayer structure of a resonator, the first electrode 230 and the second electrode 210 are formed of a single metal, for example, one of W or Mo, and the piezoelectric layer 220 is formed of ALN. The choice of metallic material is based on the specific properties of the acoustic resonator and the processing requirements. For example, since the acoustic impedance of W is greater than that of Mo, W will be used to increase kt 2 As shown in fig. 3 (b), because the high acoustic impedance material allows more acoustic energy to be localized in the piezoelectric layer 220. To minimize the resonator, the area of the acoustic resonator will be reduced, which will lead to important performance characteristics of the acoustic resonator (e.g., R p And Q) degradation. At this time, a Mo layer is interposed between the first electrode 230 and the piezoelectric layer 220 and between the piezoelectric layer 220 and the second electrode 210, forming an acoustic redistribution layer, as shown in fig. 4 (b). The acoustic impedance increases with increasing distance from the piezoelectric layer 220, which tends to distribute acoustic energy across the multilayer structure, redistributing a portion of the energy from the outer W layer to the inner Mo layer, thereby still maintaining the same amount of acoustic energy localized in the piezoelectric layer 220, compensating for kt 2 Degradation due to area reduction.
In practical applications, the acoustic redistribution layer may also replace a portion of the original metal layers of the first electrode 230 and the second electrode 210, respectively, and a portion of the original W electrode is replaced with Mo, that is, 230a and 210b, and the remaining portion of the original W electrode is 230b and 210a, while the thickness of the piezoelectric layer 220 needs to be adjusted to match the original series resonant frequency Fs and the parallel resonant frequency Fp.
In one embodiment, the piezoelectric layer 220 is disposed on top of the first electrode 230, generally defined by AL 1-x Sc x N or a thin film piezoelectric material of aluminum scandium nitride having a scandium concentration of 1% to 10%, but it may also be formed of other piezoelectric materials, such as aluminum nitride or zinc oxide.
In one embodiment, the multilayer structure further includes a passivation layer (not shown) and a seed layer (not shown), the passivation layer being disposed on a side of one of the first electrode 230 and the second electrode 210 opposite the piezoelectric layer 220; a seed layer is disposed on the opposite side of the other of the first electrode 230 and the second electrode 210 from the piezoelectric layer 220. For example, a passivation layer may be disposed on the upper portion of the second electrode 210, a seed layer may be disposed between the substrate 100 and the first electrode 230, and a passivation layer may be disposed between the substrate 100 and the first electrode 230, the seed layer being disposed on the upper portion of the second electrode 210.
In one embodiment, the seed layer may be formed of one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, and boron doped silicon oxide to promote AL 1-x Sc x And (5) growing N. The passivation layer may be formed of various types of materials including one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, silicon dioxide, boron doped silicon oxide, polysilicon, and the like. The thickness of the passivation layer should generally be sufficient to protect the layers of the multilayer structure 200 from chemical reaction with substances that may enter through leaks in the package.
Referring to fig. 2 (a), in one embodiment, the lower half cavity 301 is surrounded by a bottom wall 101 and a first side wall 102, the bottom wall 101 is parallel to the surface of the substrate 100, and the first side wall 102 is a first rounded surface extending from the edge of the bottom wall 101 to the upper surface of the substrate 100.
Wherein the bottom wall 101 and the first side wall 102 are both surface walls of the substrate 100. The first sidewall 102 is a first rounded surface, which can ensure the performance of the resonator cavity without abrupt change.
Referring to fig. 2 (c), the first rounded curved surface may include a first curved surface 1021 and a second curved surface 1022 that are rounded in transition. The first curved surface 1021 and the second curved surface 1022 in smooth transition connection means that the connection part between the first curved surface 1021 and the second curved surface 1022 is free from mutation, and both the first curved surface 1021 and the second curved surface 1022 are also free from mutation, so that the performance of the resonator cavity can be ensured. Wherein the substrate 100 is composed of a plurality of crystals (e.g., silicon crystals), no abrupt change means that the gaps between the individual crystals at the first rounded surface should not be too large to affect the performance of the resonator.
For example, the vertical section of the first curved surface 1021 may be inverted parabolic and located above the plane of the bottom wall 101; the second curved surface 1022 may have a parabolic vertical cross-section and may be located below the plane of the upper surface of the substrate 100. The first curved surface 1021 and the second curved surface 1022 are smoothly connected. Of course, the first curved surface 1021 and the second curved surface 1022 may be curved surfaces of other shapes, so long as the gaps between the crystals at the first rounded curved surface do not affect the performance of the resonator.
In one embodiment, the first rounded surface is smooth as a whole, and the curvature of each point of the first rounded surface 1021 may be smaller than the first preset value. The first preset value can be set according to practical situations, so that the purpose that gaps among crystals at the first smooth curved surface do not influence the performance of the resonator is achieved. In order to ensure the mechanical and electrical properties of the multilayer structure, the curvature of the smooth curved surface of the transition region is as small as possible, and the minimum curvature requires the length of the transition region to be increased under the condition of a certain thickness of the sacrificial layer, so that the area of the resonator is increased, and therefore, the curvature of the transition region and the length of the transition region are optimized. Preferably, the thickness of the cavity 300 may be 1 μm, the length of the transition region is controlled to be 3 μm to 5 μm, and the multi-layer structure grown in the transition region can meet resonator requirements. The transition zone length is the length of the first sidewall 102 in the direction of the dashed line shown in fig. 1.
Referring to fig. 2 (a), in one embodiment, the upper cavity 302 may be surrounded by a lower side of the multi-layer structure 200, where a portion of the lower side of the multi-layer structure 200 corresponding to the upper cavity 302 includes a top wall 201 and a second side wall 202, and the second side wall 202 is a second rounded curved surface extending from an edge of the top wall 201 to an upper surface of the substrate 100.
Wherein the top wall 201 and the second side wall 202 are both lower side walls of the multi-layer structure 200. The second side wall 202 is a second smooth curved surface, which can ensure the performance of the resonator cavity without abrupt change.
Referring to fig. 2 (c), the second rounded surface may include a third surface 2021 and a fourth surface 2022 that are rounded in transition. The third curved surface 2021 and the fourth curved surface 2022 that are in smooth transition connection mean that the connection position between the third curved surface 2021 and the fourth curved surface 2022 is free from mutation, and both the third curved surface 2021 and the fourth curved surface 2022 are also free from mutation, so that the performance of the resonator cavity can be ensured. Wherein from a crystal point of view, the substrate 100 is composed of a plurality of crystals (e.g., silicon crystals), and no abrupt change means that the gaps between the crystals at the second rounded surface should not be too large to affect the performance of the resonator.
For example, the vertical section of the third curved surface 2021 may be parabolic and located below the plane of the top wall 201; the vertical section of the fourth curved surface 2022 is inverted parabolic and is located above the plane of the upper surface of the substrate 100. Of course, the third curved surface 2021 and the fourth curved surface 2022 may have other shapes, and it is sufficient that the gaps between the crystals at the first rounded curved surface do not affect the performance of the resonator.
In one embodiment, the curvature of each point of the second rounded surface 2021 is smaller than the second preset value. The second preset value can be set according to practical situations, so that the purpose that gaps among crystals at the second smooth curved surface do not influence the performance of the resonator is achieved.
Further, the top wall 201 is also free of abrupt parts. The abrupt changes described herein are consistent with the foregoing abrupt changes, and from a crystal standpoint, the multilayer structure 200 is also composed of a plurality of crystals, with no abrupt changes meaning that the gaps between the individual crystals at the top wall 201 should not be too large to affect the performance of the resonator.
In the above embodiment, the substrate 100 may be a silicon substrate or a substrate made of other materials, the first electrode 230 may be disposed on the upper portion of the piezoelectric layer, and the second electrode 210 is disposed on the lower portion of the piezoelectric layer, which will not be described herein.
In the resonator, the cavity 300 with the lower half cavity 301 and the upper half cavity 302 is arranged, the whole lower half cavity 301 is positioned below the upper surface of the substrate 100, the whole upper half cavity 302 is positioned above the upper surface of the substrate 100, and the acoustic redistribution layer is arranged at the same time, so that a novel resonator structure is formed, and the novel resonator structure has better performance.
In one embodiment, an acoustic resonator includes a substrate, a piezoelectric layer, a first electrode, a second electrode, a passivation layer, and a seed layer.
The piezoelectric layer has a first surface and a second surface.
A first electrode disposed adjacent to the first surface, the first electrode comprising a first conductive layer and a second conductive layer; a first conductive layer disposed adjacent to the piezoelectric layer having a first acoustic impedance; the second conductive layer is disposed on a side of the first conductive layer opposite the piezoelectric layer and has a second acoustic impedance that is greater than the first acoustic impedance.
A second electrode disposed adjacent to the second surface.
A passivation layer is disposed on a side of one of the first electrode and the second electrode opposite the piezoelectric layer.
A seed layer is disposed on a side of the other of the first electrode and the second electrode opposite the piezoelectric layer.
Wherein a cavity is formed between the substrate and a multilayer structure, the cavity including a lower half cavity below an upper surface of the substrate and an upper half cavity protruding beyond the upper surface of the substrate and toward the multilayer structure, the multilayer structure including the piezoelectric layer, the first electrode, the second electrode, the seed layer, and the passivation layer.
Referring to fig. 2 (b), in one embodiment, the first electrode 230 is disposed under the piezoelectric layer 220, the second electrode 210 is disposed over the piezoelectric layer 220, and the multi-layered structure 200 includes, in order from bottom to top, a seed layer 240, the first electrode 230, the piezoelectric layer 220, and the second electrode 210, and a passivation layer 250. Wherein the second electrode 210 includes a bottom conductive layer 210b and a top conductive layer 210a. The bottom conductive layer 210b of the second electrode 210 disposed adjacent to the piezoelectric layer 220 is formed of a material having a relatively low resistance, and the top conductive layer 210a disposed on the opposite side of the piezoelectric layer 220 is formed of a material having a relatively high resistance. A cavity 300 is formed between the substrate 100 and the multilayer structure 200, the cavity 300 including a lower cavity half 301 below the upper surface of the substrate 100 and an upper cavity half 302 protruding beyond the upper surface of the substrate 100 and toward the multilayer structure 200.
In one embodiment, bottom conductive layer 210b may be formed of Mo, nb, or a MoNb alloy, and bottom conductive layer 210b may be formed of W, ir. Various alternative materials that may be used in the first electrode 230 and the second electrode 210 may also include aluminum (Al), platinum (Pt), ruthenium (Ru), or hafnium (Hf).
In one embodiment, the seed layer 240 may be formed of one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, and boron doped silicon oxide to promote AL 1-x Sc x And (5) growing N. The passivation layer 250 may be formed of various types of materials including one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, silicon dioxide, boron doped silicon oxide, polysilicon, and the like. The thickness of the passivation layer 250 should generally be sufficient to protect the layers of the multilayer structure 200 from chemical reaction with substances that may enter through leaks in the package.
In one embodiment, the first electrode 230 includes a bottom conductive layer 230b and a top conductive layer 230a. The top conductive layer 230a of the first electrode 230, which is disposed adjacent to the piezoelectric layer, is formed of a material having a relatively low resistance, and the bottom conductive layer 230b, which is disposed on the opposite side of the piezoelectric layer 220, is formed of a material having a relatively high resistance.
In one embodiment, the piezoelectric layer 220 is formed of scandium aluminum nitride or AL having a scandium concentration of 1% to 10% 1-x Sc x N。
Referring to fig. 2 (b), in one embodiment, the lower half cavity 301 is surrounded by a bottom wall 101 and a first side wall 102, the bottom wall 101 is parallel to the surface of the substrate 100, and the first side wall 102 is a first rounded surface extending from the edge of the bottom wall 101 to the upper surface of the substrate 100.
Wherein the bottom wall 101 and the first side wall 102 are both surface walls of the substrate 100. The first sidewall 102 is a first rounded surface, which can ensure the performance of the resonator cavity without abrupt change.
Referring to fig. 2 (c), the first rounded curved surface may include a first curved surface 1021 and a second curved surface 1022 that are rounded in transition. The first curved surface 1021 and the second curved surface 1022 in smooth transition connection means that the connection part between the first curved surface 1021 and the second curved surface 1022 is free from mutation, and both the first curved surface 1021 and the second curved surface 1022 are also free from mutation, so that the performance of the resonator cavity can be ensured. Wherein the substrate 100 is composed of a plurality of crystals (e.g., silicon crystals), no abrupt change means that the gaps between the individual crystals at the first rounded surface should not be too large to affect the performance of the resonator.
For example, the vertical section of the first curved surface 1021 may be inverted parabolic and located above the plane of the bottom wall 101; the second curved surface 1022 may have a parabolic vertical cross-section and may be located below the plane of the upper surface of the substrate 100. The first curved surface 1021 and the second curved surface 1022 are smoothly connected. Of course, the first curved surface 1021 and the second curved surface 1022 may be curved surfaces of other shapes, so long as the gaps between the crystals at the first rounded curved surface do not affect the performance of the resonator.
In one embodiment, the first rounded surface is smooth as a whole, and the curvature of each point of the first rounded surface 1021 may be smaller than the first preset value. The first preset value can be set according to practical situations, so that the purpose that gaps among crystals at the first smooth curved surface do not influence the performance of the resonator is achieved. In order to ensure the mechanical and electrical properties of the multilayer structure, the curvature of the smooth curved surface of the transition region is as small as possible, and the minimum curvature requires the length of the transition region to be increased under the condition of a certain thickness of the sacrificial layer, so that the area of the resonator is increased, and therefore, the curvature of the transition region and the length of the transition region are optimized. Preferably, the thickness of the cavity 300 may be 1 μm, the length of the transition region is controlled to be 3 μm to 5 μm, and the multi-layer structure grown in the transition region can meet resonator requirements. The transition zone length is the length of the first sidewall 102 in the direction of the dashed line shown in fig. 1.
Referring to fig. 2 (b), in one embodiment, the upper cavity 302 may be surrounded by a lower side of the multi-layer structure 200, where a portion of the lower side of the multi-layer structure 200 corresponding to the upper cavity 302 includes a top wall 201 and a second side wall 202, and the second side wall 202 is a second rounded curved surface extending from an edge of the top wall 201 to an upper surface of the substrate 100.
Wherein the top wall 201 and the second side wall 202 are both lower side walls of the multi-layer structure 200. The second side wall 202 is a second smooth curved surface, which can ensure the performance of the resonator cavity without abrupt change.
Referring to fig. 2 (c), the second rounded surface may include a third surface 2021 and a fourth surface 2022 that are rounded in transition. The third curved surface 2021 and the fourth curved surface 2022 that are in smooth transition connection mean that the connection position between the third curved surface 2021 and the fourth curved surface 2022 is free from mutation, and both the third curved surface 2021 and the fourth curved surface 2022 are also free from mutation, so that the performance of the resonator cavity can be ensured. Wherein from a crystal point of view, the substrate 100 is composed of a plurality of crystals (e.g., silicon crystals), and no abrupt change means that the gaps between the crystals at the second rounded surface should not be too large to affect the performance of the resonator.
For example, the vertical section of the third curved surface 2021 may be parabolic and located below the plane of the top wall 201; the vertical section of the fourth curved surface 2022 is inverted parabolic and is located above the plane of the upper surface of the substrate 100. Of course, the third curved surface 2021 and the fourth curved surface 2022 may have other shapes, and it is sufficient that the gaps between the crystals at the first rounded curved surface do not affect the performance of the resonator.
In one embodiment, the curvature of each point of the second rounded surface 2021 is smaller than the second preset value. The second preset value can be set according to practical situations, so that the purpose that gaps among crystals at the second smooth curved surface do not influence the performance of the resonator is achieved.
Further, the top wall 201 is also free of abrupt parts. The abrupt changes described herein are consistent with the foregoing abrupt changes, and from a crystal standpoint, the multilayer structure 200 is also composed of a plurality of crystals, with no abrupt changes meaning that the gaps between the individual crystals at the top wall 201 should not be too large to affect the performance of the resonator.
In the above embodiment, the substrate 100 may be a silicon substrate or a substrate made of other materials, the first electrode 230 may be disposed on the upper portion of the piezoelectric layer, and the second electrode 210 is disposed on the lower portion of the piezoelectric layer, which will not be described herein.
In the resonator, the cavity 300 with the lower half cavity 301 and the upper half cavity 302 is arranged, the whole lower half cavity 301 is positioned below the upper surface of the substrate 100, the whole upper half cavity 302 is positioned above the upper surface of the substrate 100, and the acoustic redistribution layer is arranged at the same time, so that a novel resonator structure is formed, and the novel resonator structure has better performance.
Referring to fig. 5 (a) and 5 (b), in one embodiment, a first electrode 230 is disposed below a piezoelectric layer 220, having two metal layers 230a and 230b with different acoustic impedances, wherein 230b may be formed of Ir or W, 230a may be formed of Mo or Nb, etc., the acoustic impedances of the two metal layers increasing with increasing distance from the piezoelectric layer, a second electrode 210 is disposed above the piezoelectric layer 220, having a single metal layer, formed of Ir, W, or Mo, and the piezoelectric layer 220 is formed of ALN.
Fig. 5 (a) to 10 (b) are alternative configurations of the multilayer structure 200 for use in an acoustic resonator.
Referring to fig. 6 (a), the first electrode 230 is disposed under the piezoelectric layer 220, has a single metal layer, and is formed of Ir, W, or Mo. The second electrode 210 is disposed over the piezoelectric layer, and has two metal layers 210a and 210b having different acoustic impedances, wherein 210a may be formed of Ir or W, 210b may be formed of Mo or Nb, etc., and the piezoelectric layer 220 is formed of ALN.
Referring to fig. 7 (a), the first electrode 230 is disposed under the piezoelectric layer 220, and has two metal layers 230a and 230b having different acoustic impedances, wherein 230b may be formed of Ir or W, 230a may be formed of Mo or Nb, etc., and the acoustic impedances of the two metal layers increase with increasing distance from the piezoelectric layer. The second electrode 210 is disposed over the piezoelectric layer 220, and has two metal layers 210a and 210b having different acoustic impedances, wherein 210a may be formed of Ir or W, 210b may be formed of Mo or Nb, etc., and the piezoelectric layer 220 is formed of ALN. A seed layer 240, formed of ALN, is also provided between the first electrode 230 and the substrate 100. A passivation layer 250 is disposed on the second electrode 210 and is formed of ALN.
Referring to fig. 8 (a), the first electrode 230 is disposed under the piezoelectric layer 220, and has two metal layers 230a and 230b having different acoustic impedances, wherein 230b may be formed of Ir or W, 230a may be formed of Mo or Nb, etc., and the acoustic impedances of the two metal layers increase with increasing distance from the piezoelectric layer. The second electrode 210 is disposed over the piezoelectric layer 220, has a single metal layer, is formed of Ir, W or Mo, and the piezoelectric layer 220 is formed of ALN. Meanwhile, a seed layer 240 formed of Mo, nb, or the like is further provided between the first electrode 230 and the substrate 100.
Referring to fig. 9 (a), a first electrode 230 is disposed under a piezoelectric layer 220, and has two metal layers 230a and 230b having different acoustic impedances, wherein 230b may be formed of Ir or W, 230a may be formed of Mo or Nb, etc., and the acoustic impedances of the two metal layers increase with increasing distance from the piezoelectric layer. The second electrode 210 is disposed over the piezoelectric layer 220, and has two metal layers 210a and 210b having different acoustic impedances, wherein 210a may be formed of Ir or W, 210b may be formed of Mo or Nb, etc., and the piezoelectric layer 220 is formed of ALN. A seed layer 240 formed of Mo, nb, or the like is further provided between the first electrode 230 and the substrate 100. A passivation layer 250 is provided on the second electrode 210, and is formed of Mo, nb, or the like.
Referring to fig. 10 (a), a first electrode 230 is disposed under a piezoelectric layer 220, and has two metal layers 230a and 230b having different acoustic impedances, wherein 230b may be formed of Mo, 230a may be formed of Nb or an alloy of Mo and Nb, and the acoustic impedances of the two metal layers increase with increasing distance from the piezoelectric layer. The second electrode 210 is disposed over the piezoelectric layer 220, and has two metal layers 210a and 210b having different acoustic impedances, wherein 210a may be formed of Mo, 210b may be formed of Nb or an alloy of Mo and Nb, and the piezoelectric layer 220 is formed of ALN. A seed layer 240, formed of W, is also provided between the first electrode 230 and the substrate 100. A passivation layer 250 is disposed on the second electrode 210, and is formed of W.
Where the material selections in fig. 5 (a) through 10 (b) are for illustrative purposes only, various other combinations are possible in alternative embodiments, which are not limiting.
Referring to fig. 11, in an embodiment of the present invention, a method for manufacturing a resonator is disclosed, including the following steps:
step 301, pre-processing the substrate, and changing the preset reaction rate of the preset area portion of the substrate, so that the preset reaction rate corresponding to the preset area portion is greater than the preset reaction rate corresponding to the non-preset area portion.
In this step, the preset reaction rate of the preset area portion of the substrate is enabled to reach the effect that the preset reaction rate corresponding to the preset area portion is greater than the preset reaction rate corresponding to the non-preset area portion by performing the pretreatment on the preset area portion of the substrate, so that when the preset reaction is performed on the substrate in the subsequent step 302, the reaction rate of the preset area portion and the reaction rate of the non-preset area portion are enabled to be different, so as to generate the sacrificial material portion with the preset shape.
Step 302, performing the preset reaction on the substrate to generate a sacrificial material part; the sacrificial material portion includes an upper half portion located above the upper surface of the substrate and a lower half portion located below the lower surface of the substrate.
Wherein the lower half part is surrounded by a bottom surface and a first side surface; the whole bottom surface is parallel to the surface of the substrate, and the first side surface is a first smooth curved surface extending from the edge of the bottom wall to the upper surface of the substrate. The upper half part is surrounded by the lower side surface of the multilayer structure, the part of the multilayer structure corresponding to the upper half part comprises a top surface and a second side surface, and the second side surface is a second smooth curved surface extending from the edge of the top surface to the upper surface of the substrate.
Optionally, the first smooth curved surface comprises a first curved surface and a second curved surface which are in smooth transition connection; the vertical section of the first curved surface is in an inverted parabolic shape and is positioned above the plane where the bottom surface is positioned; the vertical section of the second curved surface is parabolic and is positioned below the plane of the upper surface of the substrate.
Optionally, the second smooth curved surface comprises a third curved surface and a fourth curved surface which are in smooth transition connection; the vertical section of the third curved surface is parabolic and is positioned below the plane where the top surface is positioned; the vertical section of the fourth curved surface is in an inverted parabolic shape and is positioned above the plane where the upper surface of the substrate is positioned.
In one embodiment, the curvature of the first smooth curved surface is smaller than a first preset value; the curvature of the second smooth curved surface is smaller than a second preset value.
It can be appreciated that, since the preset reaction rate corresponding to the preset region portion is greater than the preset reaction rate corresponding to the non-preset region portion, when the preset reaction is performed on the substrate, the preset region portion reacts fast and the non-preset region portion reacts slow, so that the sacrificial material portion of the preset shape can be generated.
In one embodiment, the step 302 implementation may include: and (3) placing the substrate in an oxidizing atmosphere for oxidation treatment to obtain the sacrificial material part. Correspondingly, the pretreatment of the substrate in step 301 is a means capable of increasing the oxidation reaction rate of the predetermined area portion of the substrate. The means may be ion implantation in the preset area to increase the oxidation reaction rate of the preset area portion of the substrate, or may be a shielding layer with a preset pattern formed on the substrate to increase the oxidation reaction rate of the preset area portion of the substrate.
Of course, in other embodiments, the pretreatment in step 301 may be other than oxidation treatment, and the method may be to perform ion implantation in the preset area to increase the oxidation reaction rate of the preset area portion of the substrate, or to form a shielding layer with a preset pattern on the substrate to increase the oxidation reaction rate of the preset area portion of the substrate.
Step 303, forming a multi-layer structure on the sacrificial material layer; the multilayer structure comprises a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top in sequence;
wherein at least one of the upper electrode layer and the lower electrode layer comprises an acoustic redistribution layer;
in one embodiment, the multilayer structure further comprises a passivation layer and a seed layer.
And 304, removing the sacrificial material part to form the resonator.
In this embodiment, the substrate may be a silicon substrate or a substrate made of other materials, which is not limited thereto.
According to the method for manufacturing the resonator, the reaction rate of the preset area part of the substrate is larger than the corresponding preset reaction rate of the non-preset area part by preprocessing the substrate, so that the sacrificial material part with the preset shape can be generated when the substrate is subjected to the preset reaction, a multi-layer structure is formed on the sacrificial material layer, and finally the sacrificial material part is removed to form the resonator with the special cavity structure, and compared with the traditional manufacturing method, the surface roughness of the working area of the resonator is easier to control.
Referring to fig. 12, an embodiment of the invention discloses a method for manufacturing a resonator, which comprises the following steps:
in step 401, a shielding layer is formed on a substrate, and the shielding layer covers an area except a preset area on the substrate, see fig. 13 (a).
In this step, the process of forming the shielding layer on the substrate may include:
forming a shielding medium on the substrate, wherein the shielding layer is used for shielding the area of the substrate except for a preset area from the preset reaction;
and removing the shielding medium corresponding to the preset area to form the shielding layer.
Wherein the shielding medium acts such that the reaction rate of the portion of the substrate covered by the shielding medium is lower than the reaction rate of the portion not covered by the shielding medium. Further, the shielding layer may be used to shield the substrate from the preset reaction in an area other than the preset area.
Step 402, preprocessing a substrate on which a shielding layer is formed, and controlling a part of the substrate corresponding to the preset area to perform a preset reaction to obtain a sacrificial material part; the sacrificial material portion includes an upper half portion located above the upper surface of the substrate and a lower half portion located below the lower surface of the substrate.
Wherein the lower half part is surrounded by a bottom surface and a first side surface; the whole bottom surface is parallel to the surface of the substrate, and the first side surface is a first smooth curved surface extending from the edge of the bottom wall to the upper surface of the substrate. The upper half part is surrounded by the lower side surface of the multilayer structure, the part of the multilayer structure corresponding to the upper half part comprises a top surface and a second side surface, and the second side surface is a second smooth curved surface extending from the edge of the top surface to the upper surface of the substrate.
Optionally, the first smooth curved surface includes a first curved surface and a second curved surface that are in smooth transition connection. For example, the vertical section of the first curved surface is in an inverted parabolic shape and is positioned above the plane of the bottom surface; the vertical section of the second curved surface is parabolic and is positioned below the plane of the upper surface of the substrate.
Optionally, the second smooth curved surface comprises a third curved surface and a fourth curved surface which are in smooth transition connection; the vertical section of the third curved surface is parabolic and is positioned below the plane where the top surface is positioned; the vertical section of the fourth curved surface is in an inverted parabolic shape and is positioned above the plane where the upper surface of the substrate is positioned.
In one embodiment, the curvature of the first smooth curved surface is smaller than a first preset value; the curvature of the second smooth curved surface is smaller than a second preset value.
As an implementation manner, the implementation procedure of step 402 may include: and (3) placing the substrate in an oxidizing atmosphere for oxidation treatment, and controlling the part of the substrate corresponding to the preset area to perform oxidation reaction to obtain a sacrificial material part, as shown in fig. 13 (b).
Wherein, the placing the substrate in an oxidizing atmosphere for oxidation treatment may include:
Introducing high-purity oxygen into the substrate in a process temperature environment in a preset range so as to enable an oxide layer to be generated on the substrate at a part corresponding to the preset area;
after a first preset time, stopping introducing high-purity oxygen to the substrate, and enabling the thickness of an oxide layer on the substrate to reach a preset thickness by one or more modes of wet oxygen oxidation, oxyhydrogen synthesis oxidation and high-pressure water vapor oxidation;
and stopping introducing wet oxygen into the substrate and introducing high-purity oxygen into the substrate, and finishing the oxidation treatment of the substrate after a second preset time.
Wherein the preset range can be 1000-1200 ℃; the first preset time may be 20 minutes to 140 minutes; the preset thickness may be 0.4 μm to 4 μm; the second preset time may be 20 minutes to 140 minutes; the flow rate of the high-purity oxygen can be 3L/min-15L/min.
It should be noted that, the shape of the transition area has a certain difference by adopting one or a combination of several means of pure oxygen, wet oxygen, oxyhydrogen synthesis and high-pressure water vapor oxidation; meanwhile, the type and structure of the shielding layer are selected, a certain marketing is provided for the shape of the transition region, and the oxidation mode and the type and structure of the shielding layer are reasonably selected according to the thickness of the multilayer structure and the requirement of the piezoelectric layer on curvature change.
Step 403, removing the pretreated substrate-screening layer, see fig. 13 (c).
In step 404, a multi-layer structure is formed on the substrate from which the shielding layer is removed, the multi-layer structure including a lower electrode layer, a piezoelectric layer, and an upper electrode layer in this order from bottom to top, see fig. 13 (d).
Wherein at least one of the upper electrode layer and the lower electrode layer comprises an acoustic redistribution layer.
In one embodiment, the multilayer structure further comprises a passivation layer and a seed layer.
Step 405, removing the sacrificial material portion, see fig. 13 (e).
In this embodiment, the shielding layer may be a SiN material layer, a SiO2 material layer, a polysilicon material layer, or a multi-layer structure formed by mixing two or three materials, and the substrate may be a silicon substrate or a substrate made of other materials, which is not limited.
In one embodiment, the shielding layer can be SiN or a multilayer film structure, siN is used as an oxidation shielding layer, the shielding effect is good, and the reaction rate of the shielding region and the non-shielding region is large. The shielding medium needed to manufacture the resonator area can be removed by means of etching or corrosion, the silicon wafer is put in an oxidizing atmosphere for oxidation, and the reaction rate of the part with the shielding medium and the reaction rate of the part without the shielding medium are greatly different: the reaction rate of the part without shielding medium is faster, and the substrate Si reacts with oxygen to form SiO 2 SiO produced 2 The thickness is increased gradually, the upper surface is increased gradually than the surface with the shielding medium part, the Si surface without the shielding medium part is decreased gradually, and the surface without the shielding medium part is decreased relatively, because the oxygen at the edge part of the shielding layer can enter the lower part of the shielding layer from the side surface, the oxidation rate of the edge of the shielding layer is slower than that of the part without the shielding medium part, the oxidation rate is faster than that of the part with the shielding medium, and the closer to the edge of the shielding medium, the rate tends to be less than that of the shielding mediumOxidation rate of the mass fraction. And forming a transition region without rate change at the edge of the shielding layer, wherein the transition region can form a smooth curved surface by optimizing the oxidation mode and the type and structure of the shielding layer, and a multilayer structure of the pressure-equal-voltage thin film containing AlN is grown on the smooth curved surface, so that the crystal quality of the piezoelectric thin film can be ensured.
The embodiment of the invention also discloses a semiconductor device which comprises any resonator and has the beneficial effects of the resonator. For example, the semiconductor device may be a filter.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (11)
1. A resonator, comprising:
a substrate;
a piezoelectric layer having a first surface and a second surface;
a first electrode disposed adjacent to the first surface, the first electrode comprising a first conductive layer and a second conductive layer; a first conductive layer disposed adjacent to the piezoelectric layer having a first acoustic impedance; the second conductive layer is arranged on one side of the first conductive layer opposite to the piezoelectric layer and has a second sound impedance larger than the first sound impedance;
a second electrode disposed adjacent to the second surface, the second electrode comprising a third conductive layer and a fourth conductive layer; a third conductive layer disposed adjacent to the piezoelectric layer having a third acoustic impedance; a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer, having a fourth acoustic impedance greater than the third acoustic impedance;
wherein the first conductive layer and the third conductive layer are formed of a first material, and the second conductive layer and the fourth conductive layer are formed of a second material;
a cavity is formed between the substrate and a multilayer structure, the cavity comprises a lower half cavity below the upper surface of the substrate and an upper half cavity which is beyond the upper surface of the substrate and protrudes towards the multilayer structure, and the multilayer structure comprises the piezoelectric layer, the first electrode and the second electrode;
The lower half cavity is surrounded by a bottom wall and a first side wall, the whole bottom wall is parallel to the surface of the substrate, and the first side wall is a first smooth curved surface extending from the edge of the bottom wall to the upper surface of the substrate;
the first smooth curved surface comprises a first curved surface and a second curved surface which are in smooth transition connection;
the vertical section of the first curved surface is in an inverted parabolic shape and is positioned above the plane of the bottom wall; the vertical section of the second curved surface is parabolic and is positioned below the plane of the upper surface of the substrate;
the upper half cavity is surrounded by the lower side surface of the multilayer structure, the part of the multilayer structure corresponding to the upper half cavity comprises a top wall and a second side wall, and the second side wall is a second smooth curved surface extending from the edge of the top wall to the upper surface of the substrate;
the second smooth curved surface comprises a third curved surface and a fourth curved surface which are in smooth transition connection;
the vertical section of the third curved surface is parabolic and is positioned below the plane where the top wall is positioned; the vertical section of the fourth curved surface is in an inverted parabolic shape and is positioned above the plane where the upper surface of the substrate is positioned.
2. The resonator of claim 1, wherein the first material comprises one of niobium, molybdenum, or an alloy of niobium and molybdenum, and the second material comprises tungsten or iridium.
3. The resonator according to claim 1, characterized in that the material of the piezoelectric layer is scandium aluminum nitride or AL with a scandium concentration of 1% to 10% 1-x Sc x N。
4. The resonator according to claim 1, characterized in that it further comprises:
a passivation layer disposed on a side of one of the first electrode and the second electrode opposite the piezoelectric layer;
a seed layer disposed on a side of the other of the first electrode and the second electrode opposite the piezoelectric layer.
5. The resonator according to claim 4, wherein the passivation layer comprises one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, and boron doped silicon oxide; the seed layer comprises one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide and boron doped silicon oxide.
6. A resonator, comprising:
a substrate;
a piezoelectric layer having a first surface and a second surface;
a first electrode disposed adjacent to the first surface, the first electrode comprising a first conductive layer and a second conductive layer; a first conductive layer disposed adjacent to the piezoelectric layer having a first acoustic impedance; the second conductive layer is arranged on one side of the first conductive layer opposite to the piezoelectric layer and has a second sound impedance larger than the first sound impedance;
A second electrode disposed adjacent to the second surface;
a passivation layer disposed on a side of one of the first electrode and the second electrode opposite the piezoelectric layer;
a seed layer disposed on a side of the other of the first electrode and the second electrode opposite the piezoelectric layer;
wherein a cavity is formed between the substrate and a multilayer structure, the cavity including a lower half cavity below an upper surface of the substrate and an upper half cavity protruding beyond the upper surface of the substrate and toward the multilayer structure, the multilayer structure including the piezoelectric layer, the first electrode, the second electrode, the seed layer, and the passivation layer;
the lower half cavity is surrounded by a bottom wall and a first side wall, the whole bottom wall is parallel to the surface of the substrate, and the first side wall is a first smooth curved surface extending from the edge of the bottom wall to the upper surface of the substrate;
the first smooth curved surface comprises a first curved surface and a second curved surface which are in smooth transition connection;
the vertical section of the first curved surface is in an inverted parabolic shape and is positioned above the plane of the bottom wall;
the vertical section of the second curved surface is parabolic and is positioned below the plane of the upper surface of the substrate;
The upper half cavity is surrounded by the lower side surface of the multilayer structure, the part of the multilayer structure corresponding to the upper half cavity comprises a top wall and a second side wall, and the second side wall is a second smooth curved surface extending from the edge of the top wall to the upper surface of the substrate;
the second smooth curved surface comprises a third curved surface and a fourth curved surface which are in smooth transition connection;
the vertical section of the third curved surface is parabolic and is positioned below the plane where the top wall is positioned;
the vertical section of the fourth curved surface is in an inverted parabolic shape and is positioned above the plane where the upper surface of the substrate is positioned.
7. The resonator of claim 6, wherein the passivation layer comprises one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, and boron doped silicon oxide, and the seed layer comprises one of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, and boron doped silicon oxide.
8. The resonator of claim 6, wherein the first conductive layer comprises one of niobium, molybdenum, or an alloy of niobium and molybdenum, and the second conductive layer comprises tungsten or iridium.
9. The resonator of claim 8, wherein the second electrode comprises a third conductive layer and a fourth conductive layer; a third conductive layer disposed adjacent to the piezoelectric layer having a third acoustic impedance; a fourth conductive layer is disposed on a side of the third conductive layer opposite the piezoelectric layer, having a fourth acoustic impedance that is greater than the third acoustic impedance.
10. The resonator according to claim 6, characterized in that the material of the piezoelectric layer is scandium aluminum nitride or AL with a scandium concentration of 1% to 10% 1-x Sc x N。
11. A semiconductor device comprising the resonator of any one of claims 1-10.
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| CN114553178A (en) * | 2020-11-24 | 2022-05-27 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator having tungsten electrode, filter, and electronic device |
| CN114124022A (en) * | 2021-11-30 | 2022-03-01 | 中国科学院上海微系统与信息技术研究所 | Suspended resonator for enhancing heat dissipation and preparation method |
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