CN110868179A - Resonator packaging system - Google Patents
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- CN110868179A CN110868179A CN201910964440.1A CN201910964440A CN110868179A CN 110868179 A CN110868179 A CN 110868179A CN 201910964440 A CN201910964440 A CN 201910964440A CN 110868179 A CN110868179 A CN 110868179A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 229920000642 polymer Polymers 0.000 claims abstract description 20
- 238000005538 encapsulation Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 22
- 238000000926 separation method Methods 0.000 claims description 4
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
- PVYBHVJTMRRXLG-UHFFFAOYSA-N 1,2,5-trichloro-3-(3,4-dichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=C(Cl)C(C=2C=C(Cl)C(Cl)=CC=2)=C1 PVYBHVJTMRRXLG-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02039—Characteristics of piezoelectric layers, e.g. cutting angles consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to the technical field of semiconductors, and particularly discloses a resonator packaging system. The packaging system comprises a resonator and a packaging structure of the resonator, wherein the resonator comprises a substrate and a multilayer structure, a cavity is formed between the substrate and the multilayer structure, and the cavity comprises a lower half cavity positioned below the upper surface of the substrate and an upper half cavity which exceeds the upper surface of the substrate and protrudes towards the multilayer structure; the package structure includes a first substrate, a second substrate, a number of pillars, a polymer layer, and an encapsulation layer. The resonator packaging system provided by the invention is tightly packaged and is suitable for various resonators.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a resonator packaging system.
Background
Resonators may be used in a variety of electronic applications to perform signal processing functions, for example, in wireless communication devices using radio frequency and microwave frequency resonators as filters to improve signal reception and transmission.
The miniaturization of electronic components is a trend in the development of electronic devices, but the miniaturization development of the resonator components as a whole presents a major obstacle, and some resonators based on voltage effect, for example, bulk acoustic wave resonators (BAW), which generally exist in two types, are presented due to the need to reduce the size of the whole components: film Bulk Acoustic Resonators (FBAR) and solid-State Mounted Resonators (SMR).
In bulk acoustic wave resonator (BAW) devices, it is important to keep the device isolated from its surroundings, for example, if the resonator contacts compounds such as a cover film in its packaging structure, the resonator functions are seriously affected, and therefore, many resonator packaging structures are now available which are expensive, complex and not ideal for packaging.
Disclosure of Invention
In view of the above problems, the present invention provides a resonator packaging system.
In order to achieve the purpose of the invention, the embodiment of the invention adopts the following technical scheme:
a resonator packaging system comprising a resonator and a packaging structure for the resonator;
the resonator includes: the cavity comprises a lower half cavity positioned below the upper surface of the substrate and an upper half cavity which exceeds the upper surface of the substrate and protrudes towards the multilayer structure;
the package structure includes:
the resonator comprises a first substrate, a second substrate and a third substrate, wherein the first substrate is used for mounting a resonator on the upper surface of the first substrate, and a cavity is arranged between the first substrate and the resonator;
a second substrate disposed over the first substrate;
a plurality of posts extending between a surface of the resonator and an opposing surface of the second substrate for providing separation between the resonator and the second substrate;
a polymer layer disposed adjacent to each side of the plurality of pillars such that a cavity is formed between the first and second substrates by the polymer and the plurality of pillars;
and an encapsulation layer disposed over the first and second substrates and surrounding the pillar walls of the plurality of pillars and the polymer layer.
Optionally, the lower half cavity is enclosed by a bottom wall and a first side wall, the whole bottom wall is parallel to the surface of the substrate, and the first side wall is a smooth curved surface; the upper half cavity is surrounded by the lower side surface of the multilayer structure, the part of the multilayer structure corresponding to the upper half cavity comprises a top wall and a second side wall, and the second side wall is a smooth curved surface.
Optionally, the multilayer structure sequentially includes, from bottom to top, a first electrode layer, a first piezoelectric layer, a second electrode layer, a second piezoelectric layer, and a third electrode layer, and a bridge portion is disposed in the first piezoelectric layer, the second electrode layer, the second piezoelectric layer, or the third electrode layer, and the number of layers in which the bridge portion is disposed is 1 or 2.
Optionally, the bridge portion comprises a filler material having an acoustic impedance, and the filler material comprises non-etchable borosilicate glass.
Optionally, the cavity has a shape similar to that of the cavity in the resonator, and the upper surface and the lower surface of the cavity are parallel to the first substrate surface.
Optionally, the first substrate includes a first device substrate and a second device substrate, the first device substrate includes a first cavity and a first resonator disposed above the first cavity, and the second device substrate includes a second cavity and a second resonator disposed above the second cavity.
Optionally, the number of the first resonators and the number of the second resonators are both greater than or equal to 1.
Optionally, the second substrate comprises a printed circuit board.
Optionally, the printed circuit board is disposed opposite the first substrate, and the printed circuit board includes 4 constituent layers stacked together.
Optionally, a first electric connection structure, a second electric connection structure and a third electric connection structure are arranged in the composition layer of the printed circuit board, the three electric connection structures are respectively electrically connected with the resonators through a first column, a second column, a third column and a fourth column, the other end of the first electric connection structure is connected with the first combination pad, the other end of the second electric connection structure is connected with the second combination pad, the other end of the third electric connection structure is connected with the third combination pad, and the resonator packaging system is connected to other circuits through the first combination pad and the second combination pad.
Optionally, each face of the plurality of posts comprises a metal or metal alloy.
Optionally, the resonator is a film bulk acoustic resonator.
Compared with the prior art, the resonator packaging system provided by the invention has the following advantages: according to the embodiment of the invention, the cavity with the lower half cavity and the upper half cavity is arranged, the lower half cavity is integrally positioned below the upper surface of the substrate, and the upper half cavity is integrally positioned above the upper surface of the substrate, so that a novel resonator structure is formed and has better performance. The resonator is combined with the packaging structure, so that on one hand, when the acoustic resonator receives the applied excitation of the transformer station, acoustic waves which can be transmitted along all possible lateral directions and high-order harmonic mixing products can be avoided, and the energy loss is reduced; on the other hand, in order to ensure that the resonator with the structure has better performance in a micro electronic structure, a supporting wall is arranged between a first substrate and a second substrate in a system packaging structure, and the supporting wall can form an isolation cavity between the first substrate and the second substrate, so that the bulk acoustic wave resonator is arranged in the isolation cavity, has stronger sealing isolation effect and is isolated from being contacted with a film preparation compound for an external packaging structure, the performance reduction of the resonator due to poor isolation effect is prevented, and a novel resonator packaging structure is formed and has better use performance.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic diagram of an unpackaged resonator structure provided in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a resonator packaging system without an encapsulation layer deposited thereon according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a resonator packaging system after deposition of an encapsulating layer according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a resonator structure in a resonator packaging system according to an embodiment of the invention;
FIG. 5 is a schematic structural diagram of a resonator including a first bridge and a second bridge with a filler material in a resonator packaging system in accordance with an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a resonator including a first bridge and a second bridge with unfilled in a resonator package system in accordance with an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a resonator including a first bridge with an unfilled bridge and a second bridge with a fill material in a resonator packaging system in accordance with an embodiment of the present invention;
FIG. 8 is a schematic diagram of a single bridge resonator including a filler material in a resonator package system according to an embodiment of the present invention;
figure 9 is a schematic diagram of a resonator package system including a resonator with an unfilled single bridge, in accordance with an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, an embodiment of the present invention provides a resonator packaging system 100 including a resonator and a packaging structure for the resonator.
The package structure includes a first device substrate 101 and a second device substrate 102. The first device substrate 101 includes a first cavity 104 formed in the first device substrate 101 and a first resonator 103 over the first cavity 104. The second device substrate 102 includes a second cavity 106 formed in the second device substrate 702 and a second resonator 105 over the second cavity 106. As understood by those skilled in the art, the first resonator 103 and the second resonator 105 may be FBARs.
The second device substrate includes a Printed Circuit Board (PCB)107, and the Printed Circuit Board (PCB)107 is disposed opposite the first device substrate 101. The printed circuit board comprises 4 component layers 108, 109, 110 and 111 stacked together. The material of the component layers may be selected according to the circuit to which the resonator is to be applied, and may be FR4, epoxy glass or Teflon PCB.
A plurality of posts extending between a surface of the resonator and an opposing surface of the Printed Circuit Board (PCB)107 for providing separation between the resonator and the Printed Circuit Board (PCB)107, including a first post 114, a second post 115, a third post 116, and a fourth post 117.
Between the first device substrate 101 and the PCB108, first, second, third, and fourth pillars 114, 115, 116, 117 are separated from the polymer layer to form first and second regions 112, 113. As is appreciated by those skilled in the art, the first region 112 and the second region 313 provide the first resonator 103 and the second resonator 105 with "top side" cavities required for their proper mechanical oscillation. In general, the sealing wall is formed of a first post 114, a second post 115, a third post 116, a fourth post 117, and a polymer circumferentially surrounding the first resonator 103 and the second resonator 105 and their accompanying circuitry, as described below.
One ends of the first, second, and third electrical connection structures 119, 120, and 121 in the PCB 707 are electrically connected to the first and second resonators 103 and 105 through the first, second, third, and fourth posts 114, 115, 116, and 117. And the other end of the first electrical connection structure 119 is in electrical contact with the first bonding pad 122, the other end of the second electrical connection structure 120 is in electrical contact with the second bonding pad 123, and the other end of the third electrical connection structure 121 is in electrical contact with the third bonding pad 724. The resonator package system is connected to other circuits through the first through third bonding pads 122 through 124.
The first, second, third and fourth posts 114, 115, 116, 117 also serve to provide mechanical support while maintaining separation between the first and second device substrates 101, 102 and the PCB 107.
Referring to fig. 2, the pattern of the polymer 127 around the respective perimeters in the first device substrate 101 and the second device substrate 102 dispenses and cures the polymer 127 over the PCB 707. The polymer 127 may be selected from an epoxy material, silicone, or polyimide. The width of the polymer 127 measured from the first column 114 to the fourth column 117 depends on the viscosity of the material selected for the polymer 127.
The polymer 127 has a width of about 1mm and a height extending above each of the first 114 to fourth 117 posts. After the polymer 127 is deposited, it is cured using known techniques depending on the material chosen for the polymer. After curing, the polymer 127 acts as a seal ring to substantially prevent the overmolding compound from subsequent high pressure overmolding steps from entering into the resonator active area.
The encapsulation layer 127, which may be one of known electronic molding compounds, encapsulates the first and second device substrates 101, 102 and the PCB 107. After deposition of the polymer 127 and encapsulation by the encapsulation layer 127, the first and second regions 112 and 113 form respective cavities between the opposing inner surfaces of the first and second device substrates 101 and 102 and the PCB 107. The first 114 through fourth 117 pillars extend between the first 101 and second 102 device substrates and the PCB107, and prevent molding compound (not shown in fig. 2) from entering into the first 112 and second 113 regions, and thus prevent the molding compound forming them from contacting any of the first 103 and second 105 resonators and their accompanying circuitry.
Referring to fig. 3, the resonator packaging system structure is shown after deposition of the encapsulation layer 129. An encapsulation layer 129 is deposited over the first side 130 and the second side 131 and over the top surface 132 of the first device substrate 101; over the first side 133 and the second side 134 and over the top surface 135 of the second device substrate 102; and an exposed portion of the polymer 127 to substantially completely encapsulate the first device substrate 101 and the second device substrate 102.
The resonator packaging system provided by the invention can be used in BAW resonator devices including FBARs and SMRs, and can also be used in resonator stacks including Stacked Bulk Acoustic Resonator (SBAR) devices, catamaran acoustic resonator (DBAR) devices, or Coupled Resonator Filter (CRF) devices.
Referring to fig. 4, in one embodiment, a resonator includes a substrate 100 and a multilayer structure; the multilayer structure is formed on the substrate 100, and sequentially includes a first electrode layer 205, a first piezoelectric layer 204, a second electrode layer 203, a second piezoelectric layer 202, and a third electrode layer 201 from bottom to top. A cavity 300 is formed between the substrate 100 and the multilayer structure, and the cavity 302 includes a lower half cavity 301 below the upper surface of the substrate 100 and an upper half cavity 302 protruding beyond the upper surface of the substrate 100 and protruding toward the multilayer structure. The lower half cavity 301 is surrounded by a bottom wall 101 and a first side wall 102, the bottom wall 101 is entirely parallel to the surface of the substrate 100, and the first side wall 102 is a first rounded curved surface extending from the edge of the bottom wall 101 to the upper surface of the substrate 100. The bottom wall 101 and the first sidewall 102 are both surface walls of the substrate 100. The first side wall 102 is a first smooth curved surface, which can ensure the performance of the resonator cavity without sudden change. The upper cavity half 302 may be surrounded by the lower side of the multi-layer structure, the lower side of the multi-layer structure corresponding to the upper cavity half 302 includes a top wall 201 and a second side wall 202, and the second side wall 202 is a second smooth curved surface extending from the edge of the top wall 201 to the upper surface of the substrate 100. Wherein, the top wall 201 and the second side wall 202 are both lower side walls of the multilayer structure. The second sidewall 202 is a second smooth curved surface, which can ensure the performance of the resonator cavity without sudden change.
Referring to fig. 5, in one embodiment, a first bridge portion 402 is disposed in the second electrode layer 203, a second bridge portion is disposed in the third electrode 201, and both the first bridge portion 402 and the second bridge portion 401 are filled with a material to provide an acoustic impedance discontinuity to reduce losses. The first bridge portion 402 and the second bridge portion 401 are filled with NEBSG, CDO, silicon carbide (SiC), or other suitable dielectric materials that are not removed when the sacrificial material provided in the cavity 300 is removed during fabrication. The preparation method of the resonator comprises the following steps: the first bridge 402 and the second bridge 401 are fabricated by forming NEBSG or other filler material over the first piezoelectric layer 204 and over the second piezoelectric layer 202 by known methods and forming the various layers of the resonator over them. When the cavity 300 is formed by removing the sacrificial material, the first bridge 402 and the second bridge 401 remain filled with the selected material.
Referring to fig. 6, in one embodiment, a first bridge 402 is disposed in the second electrode layer 203, a second bridge is disposed in the third electrode 201, and both the first bridge 402 and the second bridge 401 are filled with air.
Referring to fig. 7, in one embodiment, second bridge portion 401 is filled with a material to provide an acoustic impedance discontinuity to reduce losses, while first bridge portion 402 is filled with air. This form of resonator is manufactured by patterning a material on the second piezoelectric layer 202, such as NEBSG, which will not be removed before the third electrode layer 201 is formed. The first bridge portion 402 is formed by patterning a sacrificial material on the first piezoelectric layer 204 and removing the sacrificial material as described above.
Referring to fig. 8, in one embodiment, a bridge 406 is provided in the second piezoelectric layer 202, and the bridge 406 is "filled" with a material (e.g., NEBSG or other materials described above) to provide an acoustic impedance discontinuity. The bridges 406 are disposed around the perimeter of the active region 404 of the resonator, forming a pattern that facilitates confinement of the active region of the resonator. For a bridge 406 having the same width, height, and same overlap 405 with the cavity 300 as the bridge 406, a technical effect similar to the Qo improvement expected for the bridge 406 is expected using the bridge 406. While the use of filled bridges may provide a more robust resonator structure.
Referring to fig. 9, in one embodiment, a bridge 406 is provided in the second piezoelectric layer 202. The bridge 406 is unfilled (i.e., filled with air). The bridges 406 are disposed around the perimeter of the active region 404 of the resonator, forming a pattern that facilitates confinement of the active region of the resonator. To illustrate the improvement in mode confinement in the active region 404 of the resonator, a bridge 406 may be provided having a width of about 5.0 μm, a height of 500A, and an overlap 405 that overlaps the cavity 300 by 2.0 μm.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents or improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (12)
1. A resonator packaging system, characterized by: a package structure comprising a resonator and the resonator;
the resonator includes: the cavity comprises a lower half cavity positioned below the upper surface of the substrate and an upper half cavity which exceeds the upper surface of the substrate and protrudes towards the multilayer structure;
the package structure includes:
the resonator comprises a first substrate, a second substrate and a third substrate, wherein the first substrate is used for mounting a resonator on the upper surface of the first substrate, and a cavity is arranged between the first substrate and the resonator;
a second substrate disposed over the first substrate;
a plurality of posts extending between a surface of the resonator and an opposing surface of the second substrate for providing separation between the resonator and the second substrate;
a polymer layer disposed adjacent to each side of the plurality of pillars such that a cavity is formed between the first and second substrates by the polymer and the plurality of pillars;
and an encapsulation layer disposed over the first and second substrates and surrounding the pillar walls of the plurality of pillars and the polymer layer.
2. The resonator packaging system of claim 1, wherein: the lower half cavity is enclosed by a bottom wall and a first side wall, the whole bottom wall is parallel to the surface of the substrate, and the first side wall is a smooth curved surface; the upper half cavity is surrounded by the lower side surface of the multilayer structure, the part of the multilayer structure corresponding to the upper half cavity comprises a top wall and a second side wall, and the second side wall is a smooth curved surface.
3. The resonator packaging system of claim 1, wherein: the multilayer structure sequentially comprises a first electrode layer, a first piezoelectric layer, a second electrode layer, a second piezoelectric layer and a third electrode layer from bottom to top, wherein a bridge part is arranged in the first piezoelectric layer, the second electrode layer, the second piezoelectric layer or the third electrode layer, and the number of layers for arranging the bridge part is 1 or 2.
4. The resonator packaging system of claim 3, wherein: the bridge portion includes a fill material having an acoustic impedance, and the fill material includes a non-etchable borosilicate glass.
5. The resonator packaging system of claim 1, wherein: the cavity is shaped like a cavity in the resonator, and the upper and lower surfaces of the cavity are parallel to the first substrate surface.
6. The resonator packaging system of claim 1, wherein: the first substrate includes a first device substrate including a first cavity and a first resonator disposed over the first cavity, and a second device substrate including a second cavity and a second resonator disposed over the second cavity.
7. The resonator packaging system of claim 6, wherein: the number of the first resonators and the number of the second resonators are both greater than or equal to 1.
8. The resonator packaging system of claim 1, wherein: the second substrate includes a printed circuit board.
9. The resonator packaging system of claim 8, wherein: the printed circuit board is arranged opposite to the first substrate and comprises four component layers which are overlapped together.
10. The resonator packaging system of claim 9, wherein: the packaging system is characterized in that a first electric connection structure, a second electric connection structure and a third electric connection structure are arranged in the composition layer of the printed circuit board, the three electric connection structures are respectively electrically connected with the resonators through a first column, a second column, a third column and a fourth column, the other end of the first electric connection structure is connected with a first combination pad, the other end of the second electric connection structure is connected with a second combination pad, the other end of the third electric connection structure is connected with a third combination pad, and the resonator packaging system is connected to other circuits through the first combination pad and the second combination pad.
11. The resonator packaging system of claim 1, wherein: each face of the plurality of posts comprises a metal or metal alloy.
12. The resonator packaging system according to any of claims 1 to 11, characterized in that: the resonator is a film bulk acoustic resonator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910964440.1A CN110868179A (en) | 2019-10-11 | 2019-10-11 | Resonator packaging system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910964440.1A CN110868179A (en) | 2019-10-11 | 2019-10-11 | Resonator packaging system |
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| CN110868179A true CN110868179A (en) | 2020-03-06 |
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| US20190295972A1 (en) * | 2018-03-23 | 2019-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packages and methods of forming same |
| CN209088901U (en) * | 2018-12-20 | 2019-07-09 | 中国电子科技集团公司第十三研究所 | Resonator and semiconductor devices |
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