CN110861113A - Electrostatic adsorption device and preparation method thereof - Google Patents
Electrostatic adsorption device and preparation method thereof Download PDFInfo
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- CN110861113A CN110861113A CN201810989486.4A CN201810989486A CN110861113A CN 110861113 A CN110861113 A CN 110861113A CN 201810989486 A CN201810989486 A CN 201810989486A CN 110861113 A CN110861113 A CN 110861113A
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Abstract
The embodiment of the invention provides an electrostatic adsorption device and a preparation method thereof, and solves the problems of difficulty in controlling electrode processing precision, poor insulation of an electrode structure and poor generated adsorption force of the conventional electrostatic adsorption device. An embodiment of the present invention provides an electrostatic adsorption apparatus including: an insulating layer; the conducting layer is arranged on the surface of the insulating layer; and the insulating line region is arranged on the surface of the insulating layer, penetrates through the conducting layer to divide the conducting layer into a positive electrode region and a negative electrode region.
Description
Technical Field
The invention relates to the technical field of electrostatic adsorption, in particular to an electrostatic adsorption device and a preparation method thereof.
Background
Electrostatic attraction is a technique in which an electric field is generated by applying a voltage between electrodes to induce electric charges to induce electrostatic attraction force. The electrostatic adsorption technology is widely applied to the industries of steel production, wood production, mold processing and manufacturing and the like. However, as the research in the related art is going deeper, how to apply the electrostatic adsorption technology to more scenes including daily life scenes is becoming a research hotspot.
In order to apply the electrostatic adsorption technology to more scenes, it is necessary to improve the integration and reliability of the electrostatic adsorption apparatus. In the existing electrostatic adsorption device, the pattern of the electrode structure is processed on the insulating layer, so that the precision requirement on the processing of the electrode pattern is very high. When the integration requirement of the electrode structure is high, the shape of the electrode pattern needs to be very dense, the electrode structure processed by the existing processing mode has a burr phenomenon, and the adjacent electrode part can be short-circuited due to the burrs and the generated electrostatic adsorption force can be influenced. In short, the conventional electrostatic adsorption device has the problems that the electrode processing precision is difficult to control, the insulation of the electrode structure is poor, and the generated adsorption force is poor.
Disclosure of Invention
In view of this, embodiments of the present invention provide an electrostatic adsorption device and a method for manufacturing the same, which solve the problems of the existing electrostatic adsorption device that the electrode processing precision is difficult to control, the insulation property of the electrode structure is poor, and the generated adsorption force is poor.
According to an aspect of the present invention, there is provided an electrostatic adsorption apparatus comprising: an insulating layer; the conducting layer is arranged on the surface of the insulating layer; and a continuous insulating line region disposed on the surface of the insulating layer, wherein the insulating line region penetrates the conductive layer to divide the conductive layer into a positive electrode region and a negative electrode region.
In an embodiment of the present invention, the insulating line region includes a plurality of insulating line units connected end to end in a roundabout arrangement.
In an embodiment of the present invention, a joint of two connected insulation line units is rounded.
In an embodiment of the present invention, two of the insulating line units connected to each other are parallel to each other.
In an embodiment of the invention, the insulating line units are in a curve shape, and the curve shapes of the two connected insulating line units are correspondingly arranged in opposite directions; or one of the two connected insulating line units is linear, and the other insulating line unit is curved.
In an embodiment of the invention, the insulating line region includes a groove, and a bottom of the groove exposes a surface of the insulating layer.
In an embodiment of the present invention, the electrostatic adsorption apparatus further includes: an insulating fill material disposed in the recess.
In an embodiment of the present invention, the insulating filling material includes polyvinylidene fluoride; and/or the thickness of the insulating filling material is 0.05mm to 0.3 mm.
In an embodiment of the present invention, the input voltage of the conductive layer is less than 200V, and the thickness of the insulating filling material is 0.05mm to 0.10 mm; or the input voltage of the conducting layer is 500V to 1000V, and the thickness of the insulating filling material is 0.1mm to 0.15 mm; or the input voltage of the conducting layer is 1000V to 1500V, and the thickness of the insulating filling material is 0.15mm to 0.20 mm; or the input voltage of the conductive layer is 1500V to 2500V, and the thickness of the insulating filling material is 0.2mm to 0.25 mm; or the input voltage of the conductive layer is 2500V to 3000V, and the thickness of the insulating filling material is 0.25mm to 0.30 mm.
In an embodiment of the present invention, the input voltage of the conductive layer is less than 1500V, the width of the insulating line region in a direction perpendicular to the extending direction is greater than 0.7mm, and the bending radius of the joint between adjacent insulating line units is greater than 0.65 mm; or the input voltage of the conducting layer is 1500V-2750V, the width of the insulating line region in the direction perpendicular to the extending direction is larger than 1.5mm, and the bending radius of the joint of the adjacent insulating line units is larger than 1 mm; or the input voltage of the conductive layer is 2750V-4000V, the width of the insulating line region in the direction perpendicular to the extending direction is larger than 2mm, and the bending radius of the joint of the adjacent insulating line units is larger than 1.5 mm.
In one embodiment of the invention, the conductive layer is prepared by adopting a flexible circuit board process; the input voltage of the conductive layer is less than 1500V, the width of the insulating line region in the direction perpendicular to the extending direction is greater than 0.35mm, and the bending radius of the joint of the adjacent insulating line units is greater than 0.325 mm; or the input voltage of the conducting layer is 1500V-2750V, the width of the insulating line region in the direction perpendicular to the extending direction is larger than 0.75mm, and the bending radius of the joint of the adjacent insulating line units is larger than 0.5 mm; or the input voltage of the conductive layer is 2750V-4000V, the width of the insulating line region in the direction perpendicular to the extending direction is larger than 1mm, and the bending radius of the joint of the adjacent insulating line units is larger than 0.75 mm.
In one embodiment of the invention, the conductive layer is prepared by adopting a ceramic circuit board process; the input voltage of the conductive layer is less than 1500V, the width of the insulating line region in the direction perpendicular to the extending direction is greater than 0.56mm, and the bending radius of the joint of the adjacent insulating line units is greater than 0.52 mm; or the input voltage of the conducting layer is 1500V-2750V, the width of the insulating line region in the direction perpendicular to the extending direction is larger than 1.2mm, and the bending radius of the joint of the adjacent insulating line units is larger than 0.8 mm; or the input voltage of the conductive layer is 2750V-4000V, the width of the insulating line region in the direction perpendicular to the extending direction is larger than 1.6mm, and the bending radius of the joint of the adjacent insulating line units is larger than 1.2 mm.
In an embodiment of the invention, the conductive layer is prepared by adopting a printed circuit board process; the input voltage of the conductive layer is less than 1500V, the width of the insulating line region in the direction perpendicular to the extending direction is greater than 0.77mm, and the bending radius of the joint of the adjacent insulating line units is greater than 0.715 mm; or the input voltage of the conducting layer is 1500V-2750V, the width of the insulating line region in the direction perpendicular to the extending direction is larger than 1.65mm, and the bending radius of the joint of the adjacent insulating line units is larger than 1.1 mm; or the input voltage of the conductive layer is 2750V-4000V, the width of the insulating line region in the direction perpendicular to the extending direction is larger than 2.2mm, and the bending radius of the joint of the adjacent insulating line units is larger than 1.65 mm.
In an embodiment of the present invention, the material of the conductive layer includes one or more of the following combinations: a conductive carbon-based material, a conductive silver-based material, and a metal foil.
According to another aspect of the present invention, there is also provided a method of manufacturing an electrostatic adsorption device, comprising: preparing a conductive layer on the surface of the insulating layer; and forming a continuous insulating line region arranged on the surface of the insulating layer on the conducting layer, wherein the insulating line region penetrates through the conducting layer to divide the conducting layer into a positive electrode region and a negative electrode region.
In an embodiment of the present invention, the forming, on the conductive layer, an insulating line region disposed on a surface of the insulating layer includes: and removing the conductive material corresponding to the insulating line area in the conductive layer to form a groove.
In an embodiment of the present invention, the forming, on the conductive layer, an insulating line region disposed on a surface of the insulating layer further includes: and filling an insulating filling material in the groove.
In an embodiment of the invention, the insulating material is filled in one or more of the following ways: attaching, spraying and dispensing.
In one embodiment of the invention, the conductive layer is prepared in one or more of the following ways: flexible circuit board technology, printed circuit board technology, screen printing technology and ceramic circuit board technology.
According to the electrostatic adsorption device and the preparation method thereof provided by the embodiment of the invention, the insulating line region penetrating through the conducting layer is arranged to form the positive electrode region and the negative electrode region, the preparation of the electrode structure is converted into the preparation of the insulating line region, and the electrode pattern is not required to be prepared on the surface of the insulating layer like the prior art, but only the insulating line region is required to be formed on the conducting layer to form a complete electrode pattern. Because the preparation of the insulating line region can be carried out by a mechanical mode such as etching or milling, the processing process is accurate and fast, the preparation difficulty of the electrode structure is greatly reduced, the preparation precision of the electrode structure is improved, dense electrode patterns can be realized, and the insulating problem can not be caused. Meanwhile, the inventor observes and discovers that the size of the electrostatic adsorption force is positively correlated with the length of the insulating line region between the positive electrode and the negative electrode through long-term experiments, and the generated electrostatic adsorption force can be improved through reasonably arranging the insulating line region.
Drawings
Fig. 1 is a schematic structural diagram of an electrostatic adsorption device according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of an electrostatic adsorption device according to another embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an electrostatic adsorption device according to another embodiment of the present invention.
Fig. 4 is a schematic structural diagram of an electrostatic adsorption device according to another embodiment of the present invention.
Fig. 5 is a schematic structural diagram of an electrostatic adsorption device according to an embodiment of the present invention.
Fig. 6 is a schematic diagram illustrating an electrode structure of an electrostatic adsorption device according to another embodiment of the present invention.
Fig. 7 is a schematic view of an electrode structure of an electrostatic adsorption device according to another embodiment of the present invention.
Fig. 8 is a schematic structural diagram of an electrostatic adsorption device according to another embodiment of the present invention.
Fig. 9 is a schematic structural diagram of an electrostatic adsorption device according to another embodiment of the present invention.
Fig. 10 is a schematic flow chart illustrating a method for manufacturing an electrostatic adsorption device according to an embodiment of the present invention.
Fig. 11 is a schematic flow chart illustrating a method for manufacturing an electrostatic adsorption device according to another embodiment of the present invention.
Fig. 12 is a schematic flow chart illustrating a method for manufacturing an electrostatic adsorption device according to another embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of an electrostatic adsorption device according to an embodiment of the present invention. As shown in fig. 1, the electrostatic adsorption apparatus includes: the electrostatic adsorption device comprises an insulating layer 1, a conducting layer 2 arranged on the surface of the insulating layer 1, and a continuous insulating line region 3 arranged on the surface of the insulating layer 1, wherein the insulating line region 3 penetrates through the conducting layer 2 to divide the conducting layer 2 into a positive electrode region and a negative electrode region, and the positive electrode region and the negative electrode region form an electrode structure of the electrostatic adsorption device.
The insulating layer 1 can be selected to be a flexible or hard insulating layer 1 according to a specific application scenario, and meanwhile, a specific material of the insulating layer 1 can also be selected according to a material of an electrode structure to be formed. The material of the conductive layer 2 may comprise one or more of the following combinations: a conductive carbon-based material, a conductive silver-based material, and a metal foil. However, the present invention is not limited to the specific material selection of the insulating layer 1 and the conductive layer 2.
The conductive layer 2 on the surface of the insulating layer 1 is used to form an electrode structure, and since the insulating line region 3 penetrates the entire conductive layer 2, the conductive layer 2 is necessarily divided into two parts by the insulating line region 3. One part of the positive electrode area can be used as a positive electrode area and can be electrically connected with a positive electrode of an external power supply device; the other portion may serve as a negative electrode region that may be electrically connected to a negative electrode of an external power supply device. When an external power supply device starts to apply voltage, the insulating strip region 3 between the positive electrode region and the negative electrode region becomes a capacitor region, and the electrostatic attraction force is generated by the accumulated charges in the capacitor region. The inventors found through experiments that the magnitude of the electrostatic adsorption force is actually related to the amount of charge accumulation, and therefore, in order to increase the electrostatic adsorption force per unit area, it is necessary to increase the amount of charge accumulation per unit area. The charge accumulation amount at the same voltage is related to the working capacitance between the electrodes, and the longer the length of the capacitance region is, the more charges can be accumulated, that is, the electrostatic adsorption force is actually positively related to the length of the insulated line region 3. Therefore, the electrostatic adsorption force can be improved by reasonably arranging the insulating line regions 3 so as to improve the length of the insulating line regions 3 in unit area as much as possible.
It should be understood that the above-mentioned external power supply device may be a part of the electrostatic adsorption device, and the structure of the other parts except for the insulating layer 1, the conductive layer 2 and the insulating line region 3 is not particularly limited in the present invention.
According to the electrostatic adsorption device provided by the embodiment of the invention, the insulating line region 3 penetrating through the conducting layer 2 is arranged to form the positive electrode region and the negative electrode region, the preparation of the electrode structure is converted into the preparation of the insulating line region 3, the electrode pattern is not required to be prepared on the surface of the insulating layer 1 like the prior art, and the complete electrode pattern can be formed only by forming the insulating line region 3 on the conducting layer 2. Because the preparation of the insulating line region 3 can be carried out by a mechanical mode such as etching or milling, the processing process is accurate and fast, the preparation difficulty of the electrode structure is greatly reduced, the preparation precision of the electrode structure is improved, dense electrode patterns can be realized, and the insulating problem can not be caused. Meanwhile, the inventor discovers that the size of the electrostatic adsorption force is positively correlated with the length of the insulating region between the positive electrode and the negative electrode through long-term experimental observation, and the generated electrostatic adsorption force can be improved through reasonably arranging the insulating line region 3.
In an embodiment of the present invention, as shown in fig. 2, in order to increase the length of the insulating line region 3 per unit area, the insulating line region 3 may include a plurality of insulating line units 31 arranged end to end in a roundabout manner. Since the insulated line regions 3 extend through the entire conductive layer 2, the insulated line units 31 need to be connected end to end; meanwhile, the length of the insulating line region 3 in unit area is greatly increased due to the adoption of a circuitous arrangement mode, so that the electrostatic adsorption force is favorably improved. In an embodiment of the present invention, as shown in fig. 2, the shapes of the two connected insulated line units 31 may be parallel to each other, so that the parallel insulated line units 31 may be closer together, thereby further increasing the length of the insulated line region 3 per unit area.
In a further embodiment, as shown in fig. 2, considering that there is a breakdown risk due to the point discharge if the end of the electrode structure has a sharp corner, the shape of the end of the electrode structure is actually determined by the connection of the two connected insulating line units 31, so that the connection of the two connected insulating line units 31 may have a round shape.
In an embodiment of the present invention, as shown in fig. 3, in order to further increase the length of the insulated line region 3 per unit area. The insulating line units 31 may be curved, and the curved undulation directions of the two connected insulating line units 31 are opposite to each other. In another embodiment of the present invention, as shown in fig. 4, one of the two connected insulated line units 31 may be linear, and the other insulated line unit may be curved.
It should be understood that although some specific shape examples of the insulated line regions 3 are given in the above description of the embodiments, the present invention is not limited to specific shapes and arrangements of the insulated line regions 3.
In an embodiment of the present invention, the insulating line region 3 may be a groove penetrating through the conductive layer 2, and the bottom of the groove exposes the surface of the insulating layer 1. The groove separates the conductive layer 2 into a positive electrode region and a negative electrode region. The recess may be formed by machining, for example by etching or milling, the surface of the conductive layer 2. In a further embodiment, in order to further improve the insulating property of the formed electrode structure, an insulating filling material may be further filled in the groove. In one embodiment, the insulating filling material may include polyvinylidene fluoride, and the thickness of the insulating filling material may be 0.05mm to 0.3 mm.
However, it should be understood that whether the insulating filling material is filled, the material selection and the thickness selection of the insulating filling material can be adjusted according to the actual application scenario, and the present invention is not limited in particular. For example, when the input voltage of the conductive layer 2 is higher, the requirement on the insulating performance of the electrode structure is higher, and in this case, the insulating material needs to be thicker, but the excessive thickness of the insulating material increases the cost and weight of the whole electrostatic adsorption device, so that the thickness of the insulating material needs to be selected according to a specific application scenario. Specifically, when the input voltage of the conductive layer is less than 200V, the thickness of the insulating filling material may be 0.05mm to 0.10 mm; or, when the input voltage of the conductive layer is 500V to 1000V, the thickness of the insulating filling material can be 0.1mm to 0.15 mm; or, when the input voltage of the conductive layer is 1000V to 1500V, the thickness of the insulating filling material can be 0.15mm to 0.20 mm; or, when the input voltage of the conductive layer is 1500V to 2500V, the thickness of the insulating filling material can be 0.2mm to 0.25 mm; or, the thickness of the insulating filling material may be 0.25mm to 0.30mm when the input voltage of the conductive layer is 2500V to 3000V.
Considering that the input voltage of the conductive layer 2 varies under different conditions, the length of the insulated line region 3 should be increased per unit area for obtaining better clamping effect at a certain input voltage, which also means that the width of the insulated line region 3 in the direction perpendicular to the extending direction should be reduced as much as possible to make more room for the arrangement of the insulated line region 3. Meanwhile, as described above, in consideration of the fact that the sharp end of the electrode structure may cause breakdown due to the point discharge, it is necessary to pay attention that the bend radius at the junction of the adjacent insulated line units 31 cannot be made too small while reducing the width of the insulated line region 3. In an embodiment of the present invention, when the input voltage of the conductive layer 2 is less than 1500V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 0.7mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 0.65 mm; when the input voltage of the conductive layer 2 is 1500V-2750V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 1.5mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 1 mm; and when the input voltage of the conductive layer 2 is 2750V-4000V, the width of the insulated line region 3 in the direction perpendicular to the extending direction is more than 2mm, and the bending radius of the joint of the adjacent insulated line units 31 is more than 1.5 mm.
It should be understood, however, that the selection of the width and bend radius parameters described above may be adjusted depending on the actual fabrication process of the electrode structure. For example, in an embodiment of the present invention, the conductive layer 2 is prepared by using a flexible circuit board process, and since the pattern of the conductive layer 2 prepared by using the flexible circuit board process uses PI (polyimide) as an insulating medium, the insulating property is better, the insulating line region 3 may be thinner, and the bending radius of the joint may be smaller, so as to arrange longer insulating line regions 3 on a unit area to obtain better adsorption property. Specifically, when the conductive layer 2 is prepared by a flexible circuit board process, and the input voltage of the conductive layer 2 is less than 1500V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 0.35mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 0.325 mm; when the input voltage of the conductive layer 2 is 1500V-2750V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 0.75mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 0.5 mm; when the input voltage of the conductive layer 2 is 2750V to 4000V, the width of the insulated line region 3 in the direction perpendicular to the extending direction should be greater than 1mm, and the bending radius of the joint of the adjacent insulated line units 31 should be greater than 0.75 mm.
In another embodiment of the present invention, the conductive layer 2 is prepared by a ceramic circuit board process. Because a ceramic material is used as the insulating substrate, the insulating strength of the ceramic material is high, the insulating line region 3 can be relatively thin, and the bending radius of the joint can be relatively small. When the input voltage of the conductive layer 2 is less than 1500V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 0.56mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 0.52 mm; when the input voltage of the conductive layer 2 is 1500V-2750V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 1.2mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 0.8 mm; when the input voltage of the conductive layer 2 is 2750V to 4000V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 1.6mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 1.2 mm.
In another embodiment of the present invention, the conductive layer 2 is prepared using a Printed Circuit Board (PCB) process. Because the PCB process is to expose the electrodes by using a skylight mode after the circuits are laid, the copper clad layer for forming the electrodes is generally thicker, and the PCB is provided with a solder mask layer, the insulation strength is lower, the insulation line area 3 needs to be relatively thicker, and the bending radius of the joint needs to be relatively larger. When the input voltage of the conductive layer 2 is less than 1500V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 0.77mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 0.715 mm; when the input voltage of the conductive layer 2 is 1500V-2750V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 1.65mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 1.1 mm; when the input voltage of the conductive layer 2 is 2750V to 4000V, the width of the insulating line region 3 in the direction perpendicular to the extending direction should be greater than 2.2mm, and the bending radius of the joint of the adjacent insulating line units 31 should be greater than 1.65 mm.
Fig. 5 is a schematic structural diagram of an electrostatic adsorption device according to an embodiment of the present invention. As shown in fig. 5, the electrostatic adsorption apparatus includes: an insulating layer 1; an electrode structure disposed on the surface of the insulating layer 1, wherein the electrode structure includes a positive electrode region 21, a negative electrode region 22, and an insulating region 3 located between the positive electrode region 21 and the negative electrode region 22; and a plurality of gas blow holes 4 located in the insulating region 3 and penetrating the insulating layer 1 and the electrode structure.
In an embodiment of the present invention, the electrostatic adsorption device may further include a gas generation module connected to the gas blowing hole 4 for providing gas. For example, the gas generating module may be a gas pump or a fan, the type of gas supplied may be air, the pressure may be about 1-1.5Atm, and the flow rate should be such that each blowing hole 4 is larger than 20L/Min. When the gas generating module is a gas pump, the supplied gas can be output from the gas blowing hole 4 through the conveying and shunting pipeline; when the gas generating module is an air pump, the supplied gas can act on the blowing holes 4 in a direct blowing mode. However, it should be understood that the specific implementation form of the gas generating module and whether it is integrated in the electrostatic absorption device may be adjusted according to specific application scenarios, and the present invention is not limited thereto.
Therefore, according to the electrostatic adsorption device provided by the embodiment of the invention, the air blowing holes 4 are formed in the insulation region 3 of the electrode structure, so that when the adsorbed object 7 does not need to be adsorbed again, air can be introduced through the air blowing holes 4 to exert the force of releasing the electrostatic adsorption force on the adsorbed object 7, the release speed of the adsorbed object 7 can be effectively accelerated, and the efficiency of the whole process flow in a flow production line can be improved.
Fig. 6 is a schematic diagram illustrating an electrode structure of an electrostatic adsorption device according to another embodiment of the present invention. As shown in fig. 6, the positive electrode region 21 of the electrostatic adsorption device includes a positive electrode through strip 211 and a plurality of positive electrode branch portions 212, wherein root portions of the plurality of positive electrode branch portions 212 connected to the positive electrode through strip 211 are parallel to each other and are perpendicular to the positive electrode through strip 211; the negative electrode region 22 includes a negative electrode through strip portion 221 and a plurality of negative electrode branch portions 222, wherein roots of the plurality of negative electrode branch portions 222 connected to the negative electrode through strip portion 221 are parallel to each other and are all perpendicular to the negative electrode through strip portion 221 (the negative electrode through strip portion 221 is not shown in fig. 6 and 7, the negative electrode through strip portion 221 is located at a position symmetrical to the positive electrode through strip portion 211 to connect the root of each negative electrode branch portion 222); the positive electrode through stripe 211 and the negative electrode through stripe 221 are parallel to each other, and the plurality of positive electrode branches 212 extend into gaps between the plurality of negative electrode branches 222. Therefore, the close arrangement of the electrode wires in the anode region 21 and the cathode region 22 is formed, the length of the insulating region 3 is greatly increased, and the electrostatic adsorption force is improved.
However, considering that the electrode traces in the positive electrode region 21 or the negative electrode region 22 must be continuously conducted, the arrangement of the air blowing holes 4 may destroy the close arrangement of the electrode traces in the positive electrode region 21 or the negative electrode region 22, for example, as shown in fig. 6, the positive electrode branch portion 212 and the negative electrode branch portion 222 near the air blowing holes 4 may be cut off by the air blowing holes 4. In order to fully utilize the insulating region 3 around the air blowing hole 4 to perform electrode routing arrangement so as to further improve the electrostatic adsorption force, the inventor performs new design on the electrode structure near the air blowing hole 4.
Fig. 7 is a schematic view of an electrode structure of an electrostatic adsorption device according to another embodiment of the present invention. As shown in fig. 7, the positive electrode branch portion 212 located at the side of the blow hole 4 and spaced a first predetermined distance from the blow hole 4 further includes a first annular branch portion 2121 connected to the positive electrode branch portion 212 and a plurality of mutually parallel positive electrode sub-branch portions 2122 connected to the annular branch portion; the negative branch portion 222 located at the other side of the gas blowing hole 4 and spaced a second preset distance from the gas blowing hole 4 further includes a second annular branch portion 2221 connected to the negative branch portion 222 and a plurality of negative sub-branch portions 2222 connected to the annular branch portion and parallel to each other; the first and second annular branches 2121 and 2221 surround the blow hole 4.
Therefore, through the arrangement of the first annular branch part 2121 and the second annular branch part 2221, the position of the air blowing hole 4 is ingeniously bypassed, the positive pole branch part 212 can be continued through the plurality of mutually parallel positive pole sub-branch parts 2122, and the negative pole branch part 222 can be continued through the plurality of mutually parallel negative pole sub-branch parts 2222, so that the area of the insulating region 3 near the air blowing hole 4 is fully utilized for electrode routing arrangement, the length of the insulating region 3 is further increased, and the electrostatic adsorption force is further increased.
Fig. 8 is a schematic structural diagram of an electrostatic adsorption device according to another embodiment of the present invention. As shown in fig. 8, the electrostatic adsorption apparatus may further include: and the contact layer 5 is arranged on the surface of the electrode structure and is used for contacting with an absorbed object 7. Specifically, in order to achieve a better adsorption effect, the contact layer 5 needs to be provided to improve the adhesion degree and adaptability with the article to be adsorbed 7, so as to avoid the increase of the adsorption difficulty due to the existence of a surface gap or surface incompatibility between the electrostatic adsorption device and the article to be adsorbed 7. In one embodiment of the present invention, the contact layer 5 has an elastic modulus of less than 10MPa and is 107 to 1013 Ω cm in order to achieve an optimum adsorption effect.
However, it should be understood that the material of the contact layer 5 may be selected differently according to the kind of the article 7 to be absorbed, and the material of the contact layer 5 is not particularly limited in the present invention. For example, when the material to be absorbed 7 is one or a combination of more than one of the following materials: the contact layer 5 may be made of one or more of the following materials when the surface roughness of the adsorbed object 7 is less than 5um (for example, the adsorbed object 7 is glass, a wafer, or a polished metal plate): epoxy resin, polyethylene and polyimide to achieve better fit and adaptability with the absorbed object 7. When the absorbed object 7 adopts one or more of the following materials: textile materials and printed materials (e.g. cloth or paper), the contact layer 5 may be one or a combination of more of the following materials: thermoplastic elastomer material, thermoplastic polyurethane elastomer rubber and silica gel, so as to achieve better fit degree and adaptability with the absorbed object 7.
Fig. 9 is a schematic structural diagram of an electrostatic adsorption device according to another embodiment of the present invention. As shown in fig. 9, the electrostatic adsorption device further includes: a via hole 6 disposed in the insulating layer 1, and a conductive material filled in the via hole 6; wherein the electrode structure is electrically connected to an external circuit structure through the conductive material in the via 6. The electrode structure can be led out to the back of the insulating layer 1 in such a way to form electric connection with an external circuit structure, so that the space occupying the adsorption side of the electrostatic adsorption device is prevented from forming routing, the size of the electrostatic adsorption device can be reduced, and wiring and processing are facilitated.
Fig. 10 is a schematic flow chart illustrating a method for manufacturing an electrostatic adsorption device according to an embodiment of the present invention. As shown in fig. 10, the method includes:
step 1001: and preparing a conductive layer 2 on the surface of the insulating layer 1.
The insulating layer 1 may be prepared by itself or purchased from a third party, and the source of the insulating layer 1 is not particularly limited in the present invention.
However, it should be understood that although some preparation manners of the conductive layer 2 are given above, since the positive electrode region and the negative electrode region of the electrode structure formed by the method provided by the embodiment of the present invention are formed by being separated by the subsequently prepared insulating line region 3, the conductive layer 2 may also be a layer of conductive material covering the surface of the insulating layer 1. The layer of conductive material can be prepared on the surface of the insulating layer 1 in a deposition mode, and an electrode structure is formed by preparing the insulating line area 3 subsequently.
Step 1002: a continuous insulating line region 3 is formed on the conductive layer 2 throughout the conductive layer 2, wherein the insulating line region 3 penetrates the conductive layer 2 to divide the conductive layer 2 into a positive electrode region and a negative electrode region.
Specifically, the conductive material corresponding to the insulating line region 3 may be removed from the conductive layer 2 to form a groove, the bottom of the groove exposes the surface of the insulating layer 1, the groove separates the conductive layer 2 into a positive electrode region and a negative electrode region, and the groove serves as the insulating line region 3. The recess may be formed by machining, for example by etching or milling, the surface of the conductive layer 2.
In a further embodiment, in order to further improve the insulating property of the formed electrode structure, as shown in fig. 11, the method may further include the steps of:
step 1003: the grooves of the insulating line regions 3 are filled with an insulating filling material.
In particular, the insulating material may be filled in one or more of the following ways in combination: attaching, spraying and dispensing. In one embodiment, the insulating filling material may include polyvinylidene fluoride, and the thickness of the insulating filling material may be 0.05mm to 0.3 mm. However, it should be understood that whether the insulating filling material is filled, the material selection and the thickness selection of the insulating filling material can be adjusted according to the actual application scenario, and the present invention is not limited in particular.
It should be understood that although a method of forming the insulated line regions 3 by etching has been given above. However, in an embodiment of the present invention, the specific manner of forming the conductive layer 2 and the insulated line region 3 on the insulating layer 1 can also be directly accomplished by a combination of one or more of the following manners: flexible circuit board technology, printed circuit board technology, screen printing technology and ceramic circuit board technology.
Fig. 12 is a schematic flow chart illustrating a method for manufacturing an electrostatic adsorption device according to an embodiment of the present invention. As shown in fig. 12, the method for manufacturing the electrostatic adsorption device includes:
step 1201: and printing an electrode structure on the surface of the insulating film, wherein the electrode structure comprises a positive electrode area 21, a negative electrode area 22, an insulating area 3 positioned between the positive electrode area 21 and the negative electrode area 22, and a plurality of air blowing hole areas positioned in the insulating area 3.
Step 1202: the insulating film with the electrode structure and the insulating layer 1 are pressed together by hot working.
The insulating layer 1 may be prepared by itself or purchased from a third party, and the source of the insulating layer 1 is not particularly limited in the present invention.
Step 1203: a plurality of air blowing holes 4 penetrating the insulating layer 1 and the electrode structure are formed in the plurality of air blowing hole regions, respectively.
In one embodiment of the present invention, the insulation film may be made of polyethylene terephthalate, and may have a thickness of about 0.08 mm. After printing the electrode structure earlier, reheat pressing contact layer 5, contain gas blow hole 4 reservation region in the middle of the pattern that forms after the hot pressing, then use the mode of laser cutting to cut off the insulating film, electrode structure layer and the contact layer 5 of gas blow hole 4 part, this kind of mode does not have the burr phenomenon near gas blow hole 4 during hot pressing, therefore insulating strength is better.
In another embodiment of the invention, the insulating film is made of polyethylene terephthalate material with holes cut by laser, and after the electrode structure is printed, the contact layer 5 with the air blowing holes 4 is cut by hot pressing.
It should be understood that the material of the insulating film is not limited to the polyethylene terephthalate material, but may be a polyimide material, a polyethylene material, a polypropylene material, or the like. The material of the insulating film is not particularly limited in the present invention.
Therefore, the electrode structure is printed on the insulating film in a printing mode, and then the insulating film with the electrode structure is pressed with the insulating layer 1 in a hot processing mode, so that the insulating film and the insulating layer 1 can be better integrated, the bonding strength between the insulating layer 1 and the insulating film with the electrode structure can be favorably provided, and the structural reliability of the whole electrostatic adsorption device is further provided.
In an embodiment of the invention, when the input voltage of the electrode structure is low (for example, when the input voltage is less than 1500V), the insulating film can also be directly used as the insulating substrate of the electrostatic adsorption device without being pressed with the insulating layer 1.
It should be understood that although the terms "first" and "second" are used in the above denomination descriptions, these terms are only used for clearly illustrating the technical solution of the present invention, and are not used for limiting the protection scope of the present invention.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and the like that are within the spirit and principle of the present invention are included in the present invention.
Claims (10)
1. An electrostatic adsorption device, comprising:
an insulating layer;
the conducting layer is arranged on the surface of the insulating layer; and
and the continuous insulating line region is arranged on the surface of the insulating layer, penetrates through the conducting layer and divides the conducting layer into a positive electrode region and a negative electrode region.
2. The electrostatic adsorption device of claim 1, wherein the insulating line region comprises a plurality of insulating line units which are arranged end to end in a roundabout manner.
3. The electrostatic adsorption device of claim 2, wherein the joint of the two connected insulation line units is rounded.
4. An electrostatic adsorption device according to claim 2, wherein the two connected insulated line units are parallel to each other.
5. The electrostatic adsorption device according to claim 2, wherein the insulating line units are curved, and the curved undulation directions of the two connected insulating line units are opposite to each other; or the like, or, alternatively,
one of the two connected insulating line units is linear, and the other insulating line unit is curved.
6. The electrostatic adsorption device of claim 1, wherein the insulating line region comprises a groove, and a bottom of the groove exposes a surface of the insulating layer.
7. The electrostatic adsorption device of claim 6, further comprising: an insulating fill material disposed in the recess.
8. A method of making an electrostatic adsorption device, comprising:
preparing a conductive layer on the surface of the insulating layer; and
and forming a continuous insulating line region arranged on the surface of the insulating layer on the conducting layer, wherein the insulating line region penetrates through the conducting layer to divide the conducting layer into a positive electrode region and a negative electrode region.
9. The method of claim 8, wherein the forming on the conductive layer an insulating line region disposed on a surface of the insulating layer comprises:
and removing the conductive material corresponding to the insulating line area in the conductive layer to form a groove.
10. The method of claim 9, wherein forming an insulating line region disposed on a surface of the insulating layer on the conductive layer further comprises:
and filling an insulating filling material in the groove.
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| CN201810989486.4A CN110861113A (en) | 2018-08-28 | 2018-08-28 | Electrostatic adsorption device and preparation method thereof |
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| CN201810989486.4A CN110861113A (en) | 2018-08-28 | 2018-08-28 | Electrostatic adsorption device and preparation method thereof |
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